CN113363370A - LED chip with vertical structure and manufacturing method thereof - Google Patents
LED chip with vertical structure and manufacturing method thereof Download PDFInfo
- Publication number
- CN113363370A CN113363370A CN202110613538.XA CN202110613538A CN113363370A CN 113363370 A CN113363370 A CN 113363370A CN 202110613538 A CN202110613538 A CN 202110613538A CN 113363370 A CN113363370 A CN 113363370A
- Authority
- CN
- China
- Prior art keywords
- layer
- led chip
- epitaxial
- type semiconductor
- conductive substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 72
- 238000003475 lamination Methods 0.000 claims abstract description 41
- 238000000576 coating method Methods 0.000 claims abstract description 29
- 239000000843 powder Substances 0.000 claims abstract description 27
- 239000011248 coating agent Substances 0.000 claims abstract description 15
- 239000004065 semiconductor Substances 0.000 claims description 48
- 238000000034 method Methods 0.000 claims description 30
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 11
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000003292 glue Substances 0.000 claims description 4
- 229910010272 inorganic material Inorganic materials 0.000 claims description 4
- 239000011147 inorganic material Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 239000000741 silica gel Substances 0.000 claims description 4
- 229910002027 silica gel Inorganic materials 0.000 claims description 4
- 239000004408 titanium dioxide Substances 0.000 claims description 4
- 230000000903 blocking effect Effects 0.000 claims 3
- 230000004888 barrier function Effects 0.000 claims 1
- 230000009286 beneficial effect Effects 0.000 description 5
- 229910002601 GaN Inorganic materials 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
Abstract
The invention provides a vertical-structure LED chip and a manufacturing method thereof.A shielding layer is coated on the side wall of an epitaxial lamination layer and used for shielding the lateral overflow light of the LED chip; coating fluorescent powder on the surface of one side, away from the conductive substrate, of the epitaxial lamination layer; the LED chip with the vertical structure has the advantage that the light-emitting appearance of the LED chip is distributed in a nearly Lambert manner, and meanwhile, the uniformity of the light-emitting of the LED chip can be obviously improved through the coating of the fluorescent powder and the shielding layer.
Description
Technical Field
The invention relates to the field of light emitting diodes, in particular to a vertical-structure LED chip and a manufacturing method thereof.
Background
Most LEDs are monochromatic and for applications in the field of lighting, conversion of monochromatic light into a broad spectrum of white light is generally required. There are generally three methods for this conversion. The first method is a wavelength conversion method of emitting light of a long wavelength by down-conversion by using a short-wavelength LED; the second method is a mixed color method by combining a plurality of LEDs, each of which generates light of a different color; the third method is to use a mixture of the above two methods.
Most of the commercial products today are produced by this hybrid process. The surface of the blue LED chip with the short wavelength is coated with fluorescent powder, the blue light can excite yellow light with the long wavelength through the fluorescent powder, and the blue light emitted by the chip is mixed with the excited yellow light to emit white light. The color temperature of white light is determined by the ratio of blue light to yellow light, and when the ratio of blue light is higher, the color of white light is more blue (cool white) and the color temperature is higher. When yellow light is relatively high, white light is yellowish (warm white) in color and has a low color temperature.
According to the coating mode of the fluorescent powder, the method can be divided into a free dispensing method, a conformal coating method and a remote coating method. In the free dispensing method and the conformal coating method, the phosphor layer and the chip are bonded together in a short distance, which is usually realized by dispensing, spraying, fluorescent film, etc., but in the process of realizing the method, the situation of inconsistent color temperature on the surface of the chip is inevitably faced, which is mainly caused by uneven phosphor coating or uneven light emission of the chip. In the far-away coating method, the fluorescent powder is not coated on the surface of the chip, but is kept at a certain distance from the chip on the light-emitting path of the chip, so that the light uniformity is improved to some extent, but certain efficiency loss is brought.
In view of the above, the present inventors have specially designed a vertical structure LED chip and a method for manufacturing the same.
Disclosure of Invention
The invention aims to provide a vertical structure LED chip and a manufacturing method thereof, and aims to solve the technical problem that the vertical structure LED chip has uneven light emission due to the difference of the thickness of an epitaxial lamination layer, the light emission intensity of the edge of the epitaxial lamination layer and the coating thickness of fluorescent powder on the front surface of a semiconductor light emitting layer in the conventional vertical structure LED chip.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows:
a vertical structure LED chip comprising:
a conductive substrate;
the epitaxial lamination is arranged on the surface of the conductive substrate and comprises a first type semiconductor layer, an active region and a second type semiconductor layer which are sequentially stacked along a first direction; the first direction is perpendicular to the conductive substrate and is directed to the epitaxial stacked layer by the conductive substrate;
the first electrode is laminated on one side surface, away from the active region, of the second type semiconductor layer;
the shielding layer is coated on the side wall of the epitaxial lamination layer and used for shielding the lateral overflowing light of the LED chip;
and the fluorescent powder is coated on the surface of one side, which is deviated from the conductive substrate, of the epitaxial lamination layer, and does not cover the first electrode.
Preferably, the shielding layer extends from a sidewall of the epitaxial stack to an edge or a partial surface of the epitaxial stack.
Preferably, the shielding layer comprises a material layer capable of absorbing or reflecting light overflowing from the side direction of the LED chip.
Preferably, the phosphor is formed on a surface of the epitaxial stack facing away from the conductive substrate by a conformal coating process.
Preferably, the shielding layer comprises a non-transparent organic glue.
Preferably, the shielding layer comprises silica gel doped with titanium dioxide.
Preferably, the shielding layer comprises a non-transparent inorganic material.
Preferably, the shielding layer includes a DBR structure.
Preferably, the shielding layer includes an insulating layer and a metal layer stacked in sequence, and the insulating layer is close to a sidewall of the epitaxial stack.
The invention also provides a manufacturing method of the LED chip with the vertical structure, which comprises the following steps:
s01, providing a growth substrate;
s02, stacking an epitaxial lamination on the surface of the growth substrate, wherein the epitaxial lamination comprises a second type semiconductor layer, an active region and a first type semiconductor layer which are sequentially stacked along a first direction of a growth direction;
s03, fixing the epitaxial lamination layer on a conductive substrate through a bonding process, wherein the conductive substrate is formed on the surface of the first-type semiconductor layer;
s04, stripping the growth substrate;
s05, manufacturing a first electrode which is laminated on one side surface of the second type semiconductor layer, which is far away from the active area;
s06, manufacturing a shielding layer, and coating the shielding layer on the side wall of the epitaxial lamination;
and S07, manufacturing fluorescent powder, wherein the fluorescent powder is coated on the surface of one side, away from the conductive substrate, of the epitaxial lamination layer through a conformal coating process and does not cover the first electrode.
The invention also provides a manufacturing method of another LED chip with a vertical structure, which comprises the following steps:
s01, providing a growth substrate;
s02, stacking an epitaxial lamination on the surface of the growth substrate, wherein the epitaxial lamination comprises a second type semiconductor layer, an active region and a first type semiconductor layer which are sequentially stacked along the growth direction;
s03, fixing the epitaxial lamination layer on a conductive substrate through a bonding process, wherein the conductive substrate is formed on the surface of the first-type semiconductor layer;
s04, stripping the growth substrate;
s05, manufacturing a first electrode which is laminated on one side surface of the second type semiconductor layer, which is far away from the active area;
s06, manufacturing a shielding layer, wherein the shielding layer is coated on the side wall of the epitaxial lamination and extends to the edge or partial surface of the epitaxial lamination;
and S07, manufacturing fluorescent powder, wherein the fluorescent powder is coated on the surface of one side, away from the conductive substrate, of the epitaxial lamination layer through a conformal coating process and does not cover the first electrode.
According to the technical scheme, the shielding layer is coated on the side wall of the epitaxial lamination layer, so that the LED chip with the vertical structure is used for shielding the lateral overflow light of the LED chip; coating fluorescent powder on the surface of one side, away from the conductive substrate, of the epitaxial lamination layer; the LED chip with the vertical structure has the advantage that the light-emitting appearance of the LED chip is distributed in a nearly Lambert manner, and meanwhile, the uniformity of the light-emitting of the LED chip can be obviously improved through the coating of the fluorescent powder and the shielding layer.
Secondly, the shielding layer is arranged to extend from the side wall of the epitaxial lamination layer to the edge or partial surface of the epitaxial lamination layer, so that the problem that the luminous intensity and the fluorescent powder coating thickness of the edge of the epitaxial lamination layer are different from the front surface of the epitaxial lamination layer can be solved well.
The manufacturing method of the LED chip with the vertical structure provided by the invention has the beneficial effects that the manufacturing process is simple and convenient, the cost is saved, and the production is convenient while the beneficial effects of the LED chip are realized.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a schematic structural diagram of an LED chip with a vertical structure provided in embodiment 1 of the present invention;
fig. 2.1 to 2.7 are schematic structural diagrams corresponding to steps of a method for manufacturing an LED chip with a vertical structure according to embodiment 1 of the present invention;
fig. 3 is a schematic structural diagram of an LED chip with a vertical structure provided in embodiment 2 of the present invention;
fig. 4.1 to 4.7 are schematic structural diagrams corresponding to steps of a method for manufacturing an LED chip with a vertical structure according to embodiment 2 of the present invention;
the symbols in the drawings illustrate that: 1. the semiconductor device comprises a growth substrate, 2, an epitaxial lamination layer, 21, a first type semiconductor layer, 22, an active region, 23, a second type semiconductor layer, 3, a first electrode, 4, a shielding layer, 5, fluorescent powder, 6 and a conductive substrate.
Detailed Description
In order to make the content of the present invention clearer, the content of the present invention is further explained below with reference to the attached drawings. The invention is not limited to this specific embodiment. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
As shown in fig. 1, a vertical structure LED chip includes:
a conductive substrate 6;
an epitaxial stack 2 disposed on the surface of the conductive substrate 6, the epitaxial stack 2 including a first type semiconductor layer 21, an active region 22, and a second type semiconductor layer 23 sequentially stacked along a first direction; the first direction is perpendicular to the conductive substrate and is directed to the epitaxial stack 2 from the conductive substrate;
a first electrode 3 laminated on a surface of the second-type semiconductor layer 23 on a side away from the active region 22;
the shielding layer 4 is coated on the side wall of the epitaxial laminated layer 2 and used for shielding the lateral light overflowing from the LED chip;
and the fluorescent powder 5 is coated on the surface of one side, away from the conductive substrate 6, of the epitaxial laminated layer 2 and does not cover the first electrode 3.
It is to be noted that the type of the conductive substrate 6 may also be unlimited in the present embodiment, and for example, the conductive substrate 6 may be a silicon substrate.
Meanwhile, the types of the first-type semiconductor layer 21, the active region 22 and the second-type semiconductor layer 23 of the epitaxial stack 2 may also be unlimited in the present embodiment, for example, the first-type semiconductor layer 21 may be, but is not limited to, a gallium nitride layer, and correspondingly, the second-type semiconductor layer 23 may be, but is not limited to, a gallium nitride layer.
In this embodiment, the shielding layer 4 includes a material layer capable of absorbing or reflecting the light emitted from the LED chip.
In this embodiment, the phosphor 5 is formed on the surface of the epitaxial stacked layer 2 facing away from the conductive substrate 6 by a conformal coating process.
In this embodiment, the shielding layer 4 includes a non-transparent organic glue.
In this embodiment, the shielding layer 4 includes silica gel doped with titanium dioxide.
In the present embodiment, the shielding layer 4 includes a non-transparent inorganic material.
In this embodiment, the shielding layer 4 includes a DBR structure.
In this embodiment, the shielding layer 4 includes an insulating layer and a metal layer stacked in sequence, and the insulating layer is close to the sidewall of the epitaxial stack 2.
The embodiment also provides a manufacturing method of the vertical-structure LED chip, which comprises the following steps:
s01, as shown in fig. 2.1, providing a growth substrate 1;
s02, as shown in fig. 2.2, stacking an epitaxial stack 2 on the surface of the growth substrate 1, the epitaxial stack 2 including the second-type semiconductor layer 23, the active region 22 and the first-type semiconductor layer 21 stacked along the growth direction;
s03, as shown in fig. 2.3, fixing the epitaxial stack 2 to the conductive substrate 6 by a bonding process, wherein the conductive substrate 6 is formed on the surface of the first-type semiconductor layer 21;
s04, as shown in figure 2.4, stripping the growth substrate 1;
s05, as shown in fig. 2.5, fabricating a first electrode 3 stacked on a surface of the second type semiconductor layer 23 away from the active region 22;
s06, as shown in fig. 2.6, making a shielding layer 4 coated on the sidewall of the epitaxial stack 2;
s07, as shown in fig. 2.7, phosphor 5 is fabricated, which is applied to the surface of the epitaxial stacked layer 2 facing away from the conductive substrate 6 by a conformal coating process, and does not cover the first electrode 3.
It should be noted that the manufacturing method of this embodiment does not limit the sequence of coating the shielding layer 4 and the phosphor 5.
According to the technical scheme, the shielding layer 4 is coated on the side wall of the epitaxial laminated layer 2, so that the LED chip with the vertical structure provided by the embodiment of the invention is used for shielding the lateral overflow light of the LED chip; the surface of one side, which is far away from the conductive substrate 6, of the epitaxial lamination layer 2 is coated with fluorescent powder 5; the LED chip with the vertical structure has the advantage that the light-emitting appearance of the LED chip is distributed in a nearly Lambert manner, and meanwhile, the uniformity of the light-emitting of the LED chip can be obviously improved through the coating of the fluorescent powder 5 and the shielding layer 4.
Secondly, by providing the shielding layer 4 extending from the sidewall of the epitaxial stacked layer 2 to the edge or a part of the surface of the epitaxial stacked layer 2, the problem that the luminous intensity and the coating thickness of the phosphor 5 at the edge of the epitaxial stacked layer 2 are different from those at the front surface of the epitaxial stacked layer 2 can be solved.
The manufacturing method of the LED chip with the vertical structure provided by the embodiment of the invention has the advantages of simple and convenient process and manufacture, cost saving and convenience for production while realizing the beneficial effects of the LED chip.
Example 2
As shown in fig. 3, a vertical structure LED chip includes:
a conductive substrate 6;
an epitaxial stack 2 disposed on the surface of the conductive substrate 6, the epitaxial stack 2 including a first type semiconductor layer 21, an active region 22, and a second type semiconductor layer 23 sequentially stacked along a first direction; the first direction is perpendicular to the conductive substrate and is directed to the epitaxial stack 2 from the conductive substrate;
a first electrode 3 laminated on a surface of the second-type semiconductor layer 23 on a side away from the active region 22;
the shielding layer 4 is coated on the side wall of the epitaxial laminated layer 2 and used for shielding the lateral light overflowing from the LED chip; further, the shielding layer 4 extends from the sidewall of the epitaxial stack 2 to the edge or part of the surface of the epitaxial stack 2.
And the fluorescent powder 5 is coated on the surface of one side, away from the conductive substrate 6, of the epitaxial laminated layer 2 and does not cover the first electrode 3.
It is to be noted that the type of the conductive substrate 6 may also be unlimited in the present embodiment, and for example, the conductive substrate 6 may be a silicon substrate.
Meanwhile, the types of the first-type semiconductor layer 21, the active region 22 and the second-type semiconductor layer 23 of the epitaxial stack 2 may also be unlimited in the present embodiment, for example, the first-type semiconductor layer 21 may be, but is not limited to, a gallium nitride layer, and correspondingly, the second-type semiconductor layer 23 may be, but is not limited to, a gallium nitride layer.
In this embodiment, the shielding layer 4 includes a material layer capable of absorbing or reflecting the light emitted from the LED chip.
In this embodiment, the phosphor 5 is formed on the surface of the epitaxial stacked layer 2 facing away from the conductive substrate 6 by a conformal coating process.
In this embodiment, the shielding layer 4 includes a non-transparent organic glue.
In this embodiment, the shielding layer 4 includes silica gel doped with titanium dioxide.
In the present embodiment, the shielding layer 4 includes a non-transparent inorganic material.
In this embodiment, the shielding layer 4 includes a DBR structure.
In this embodiment, the shielding layer 4 includes an insulating layer and a metal layer stacked in sequence, and the insulating layer is close to the sidewall of the epitaxial stack 2.
The embodiment also provides a manufacturing method of the vertical-structure LED chip, which comprises the following steps:
s01, as shown in fig. 4.1, providing a growth substrate 1;
s02, as shown in fig. 4.2, stacking an epitaxial stack 2 on the surface of the growth substrate 1, the epitaxial stack 2 including a second type semiconductor layer 23, an active region 22 and a first type semiconductor layer 21 stacked in sequence along the growth direction;
s03, as shown in fig. 4.3, fixing the epitaxial stack 2 to the conductive substrate 6 by a bonding process, wherein the conductive substrate 6 is formed on the surface of the first-type semiconductor layer 21;
s04, as shown in figure 4.4, stripping the growth substrate 1;
s05, as shown in fig. 4.5, fabricating a first electrode 3 stacked on a surface of the second type semiconductor layer 23 away from the active region 22;
s06, as shown in fig. 4.6, making a shielding layer 4, which is coated on the sidewall of the epitaxial stack 2 and extends to the edge or part of the surface of the epitaxial stack 2;
s07, as shown in fig. 4.7, phosphor 5 is fabricated, which is applied to the surface of the epitaxial stacked layer 2 facing away from the conductive substrate 6 by a conformal coating process, and does not cover the first electrode 3.
According to the technical scheme, the shielding layer 4 is coated on the side wall of the epitaxial laminated layer 2, so that the LED chip with the vertical structure is used for shielding the lateral overflowing light of the LED chip; the surface of one side, which is far away from the conductive substrate 6, of the epitaxial lamination layer 2 is coated with fluorescent powder 5; the LED chip with the vertical structure has the advantage that the light-emitting appearance of the LED chip is distributed in a nearly Lambert manner, and meanwhile, the uniformity of the light-emitting of the LED chip can be obviously improved through the coating of the fluorescent powder 5 and the shielding layer 4.
Secondly, by providing the shielding layer 4 extending from the sidewall of the epitaxial stacked layer 2 to the edge or a part of the surface of the epitaxial stacked layer 2, the problem that the luminous intensity and the coating thickness of the phosphor 5 at the edge of the epitaxial stacked layer 2 are different from those at the front surface of the epitaxial stacked layer 2 can be solved.
The manufacturing method of the LED chip with the vertical structure provided by the invention has the beneficial effects that the manufacturing process is simple and convenient, the cost is saved, and the production is convenient while the beneficial effects of the LED chip are realized.
The device provided by the embodiment of the present invention has the same implementation principle and technical effect as the method embodiments, and for the sake of brief description, reference may be made to the corresponding contents in the method embodiments without reference to the device embodiments. It is clear to those skilled in the art that, for convenience and brevity of description, the specific working processes of the foregoing systems, apparatuses and units may refer to the corresponding processes in the foregoing method embodiments, and are not described herein again.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
It is further noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that an article or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such article or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in an article or device that comprises the element.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the application. Thus, the present application is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. A vertical structure LED chip, comprising:
a conductive substrate;
the epitaxial lamination is arranged on the surface of the conductive substrate and comprises a first type semiconductor layer, an active region and a second type semiconductor layer which are sequentially stacked along a first direction; the first direction is perpendicular to the substrate and directed from the substrate to the epitaxial stack;
the first electrode is laminated on one side surface, away from the active region, of the second type semiconductor layer;
the shielding layer is coated on the side wall of the epitaxial lamination layer and used for shielding the lateral overflowing light of the LED chip;
and the fluorescent powder is coated on the surface of one side, which is deviated from the conductive substrate, of the epitaxial lamination layer, and does not cover the first electrode.
2. The vertical structure LED chip of claim 1, wherein the blocking layer extends from a sidewall of the epitaxial stack to an edge or a partial surface of the epitaxial stack.
3. The vertical structure LED chip of claim 1, wherein the phosphor is formed by a conformal coating process on a side surface of the epitaxial stack facing away from the conductive substrate.
4. The vertical geometry LED chip of claim 1 wherein the blocking layer comprises a non-transparent organic glue.
5. The vertical structure LED chip of claim 4, wherein the shielding layer comprises titanium dioxide doped silica gel.
6. The vertical geometry LED chip of claim 1 wherein the barrier layer comprises a non-transparent inorganic material.
7. The vertical structure LED chip of claim 1, wherein the blocking layer comprises a DBR structure.
8. The vertical structure LED chip of claim 1, wherein the shielding layer comprises an insulating layer and a metal layer stacked in sequence, and the insulating layer is adjacent to a sidewall of the epitaxial stack.
9. A method for manufacturing the vertical structure LED chip of claim 1, comprising the steps of:
s01, providing a growth substrate;
s02, stacking an epitaxial lamination on the surface of the growth substrate, wherein the epitaxial lamination comprises a second type semiconductor layer, an active region and a first type semiconductor layer which are sequentially stacked along the growth direction;
s03, fixing the epitaxial lamination layer on a conductive substrate through a bonding process, wherein the conductive substrate is formed on the surface of the first-type semiconductor layer;
s04, stripping the growth substrate;
s05, manufacturing a first electrode which is laminated on one side surface of the second type semiconductor layer, which is far away from the active area;
s06, manufacturing a shielding layer, and coating the shielding layer on the side wall of the epitaxial lamination;
and S07, manufacturing fluorescent powder, wherein the fluorescent powder is coated on the surface of one side, away from the conductive substrate, of the epitaxial lamination layer through a conformal coating process and does not cover the first electrode.
10. A method for manufacturing the vertical structure LED chip of claim 2, comprising the steps of:
s01, providing a growth substrate;
s02, stacking an epitaxial lamination on the surface of the growth substrate, wherein the epitaxial lamination comprises a second type semiconductor layer, an active region and a first type semiconductor layer which are sequentially stacked along the growth direction;
s03, fixing the epitaxial lamination layer on a conductive substrate through a bonding process, wherein the conductive substrate is formed on the surface of the first-type semiconductor layer;
s04, stripping the growth substrate;
s05, manufacturing a first electrode which is laminated on one side surface of the second type semiconductor layer, which is far away from the active area;
s06, manufacturing a shielding layer, wherein the shielding layer is coated on the side wall of the epitaxial lamination and extends to the edge or partial surface of the epitaxial lamination;
and S07, manufacturing fluorescent powder, wherein the fluorescent powder is coated on the surface of one side, away from the conductive substrate, of the epitaxial lamination layer through a conformal coating process and does not cover the first electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110613538.XA CN113363370A (en) | 2021-06-02 | 2021-06-02 | LED chip with vertical structure and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110613538.XA CN113363370A (en) | 2021-06-02 | 2021-06-02 | LED chip with vertical structure and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113363370A true CN113363370A (en) | 2021-09-07 |
Family
ID=77531239
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110613538.XA Pending CN113363370A (en) | 2021-06-02 | 2021-06-02 | LED chip with vertical structure and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113363370A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102208499A (en) * | 2011-05-12 | 2011-10-05 | 深圳市瑞丰光电子股份有限公司 | Manufacturing process of white-light LED chip and product thereof |
| CN103904180A (en) * | 2012-12-25 | 2014-07-02 | 比亚迪股份有限公司 | LED chip structure and preparation method |
| US20160240751A1 (en) * | 2015-02-17 | 2016-08-18 | Genesis Photonics Inc. | Light emitting device and manufacturing method thereof |
| CN105932120A (en) * | 2016-06-15 | 2016-09-07 | 佛山市国星半导体技术有限公司 | Manufacturing method of LED chip with side wall DBR |
| CN211265505U (en) * | 2019-12-26 | 2020-08-14 | 厦门乾照光电股份有限公司 | Mini LED chip |
| CN112349819A (en) * | 2020-11-04 | 2021-02-09 | 厦门乾照光电股份有限公司 | Through hole filling type LED chip and manufacturing method thereof |
-
2021
- 2021-06-02 CN CN202110613538.XA patent/CN113363370A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102208499A (en) * | 2011-05-12 | 2011-10-05 | 深圳市瑞丰光电子股份有限公司 | Manufacturing process of white-light LED chip and product thereof |
| CN103904180A (en) * | 2012-12-25 | 2014-07-02 | 比亚迪股份有限公司 | LED chip structure and preparation method |
| US20160240751A1 (en) * | 2015-02-17 | 2016-08-18 | Genesis Photonics Inc. | Light emitting device and manufacturing method thereof |
| CN105932120A (en) * | 2016-06-15 | 2016-09-07 | 佛山市国星半导体技术有限公司 | Manufacturing method of LED chip with side wall DBR |
| CN211265505U (en) * | 2019-12-26 | 2020-08-14 | 厦门乾照光电股份有限公司 | Mini LED chip |
| CN112349819A (en) * | 2020-11-04 | 2021-02-09 | 厦门乾照光电股份有限公司 | Through hole filling type LED chip and manufacturing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8866166B2 (en) | Solid state lighting device | |
| EP1766693B1 (en) | Light emitting device including rgb light emitting diodes and phosphor | |
| JP6382792B2 (en) | Optical cavity including light emitting device and wavelength converting material | |
| US9705050B2 (en) | Phosphor sheet, light-emitting device having the phosphor sheet and method of manufacturing the same | |
| JP5990651B2 (en) | Optoelectronic component and manufacturing method thereof | |
| EP2945196B1 (en) | Light emitting diode having wavelength conversion layer | |
| KR20130056193A (en) | Semiconductor light emitting device and manufacturing method of the same | |
| US20170040499A1 (en) | Semiconductor light emitting device | |
| US20100264843A1 (en) | Radiation-Emitting Device | |
| KR20160057163A (en) | Light emitting diode | |
| JP2018107418A (en) | Light-emitting device | |
| CN111133593B (en) | Light emitting diode device and method for manufacturing the same | |
| EP2390937B1 (en) | Light emitting device package comprising an optical filter between a light emitting device and a fluorescent layer | |
| CN113363370A (en) | LED chip with vertical structure and manufacturing method thereof | |
| CN217788391U (en) | Display panel based on ultrathin glass | |
| CN112038457B (en) | Flip red light LED chip and manufacturing method thereof | |
| JP2005197573A (en) | Group iii nitride semiconductor light emitting element | |
| CN101673787A (en) | Semiconductor luminous device and packaging structure thereof | |
| KR102397909B1 (en) | Board and light source module having the same | |
| US10153459B2 (en) | Optoelectronic package | |
| KR20200056930A (en) | Manufacturing method of light emitting device | |
| JP5285795B1 (en) | Lighting module | |
| US20220190214A1 (en) | Method of manufacturing light emitting device and method of manufacturing light emitting module | |
| JP2010003753A (en) | Semiconductor light-emitting device | |
| KR102135626B1 (en) | Light emitting device having uv light diode |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20210907 |