CN211151511U - Undervoltage protection circuit with temperature compensation - Google Patents
Undervoltage protection circuit with temperature compensation Download PDFInfo
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- CN211151511U CN211151511U CN201922388072.9U CN201922388072U CN211151511U CN 211151511 U CN211151511 U CN 211151511U CN 201922388072 U CN201922388072 U CN 201922388072U CN 211151511 U CN211151511 U CN 211151511U
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- temperature compensation
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Abstract
The utility model relates to an undervoltage protection circuit with temperature compensation, including the diode, neat nanotube, first to fourth resistance, first to fifth MOS pipe, the phase inverter, the positive pole power connection of diode, the negative pole of diode connects neat nanotube's negative pole, neat nanotube's positive pole connects first resistance, the second resistance, the third resistance, first MOS pipe and phase inverter constitute conventional undervoltage protection circuit, the fourth resistance, the second MOS pipe, the third MOS pipe, the fourth MOS pipe, fifth MOS pipe constitutes the temperature compensation circuit to conventional undervoltage protection circuit, the output of phase inverter is connected to the grid of fifth MOS pipe. The temperature compensation circuit is used for realizing low cost and obvious temperature compensation effect on the threshold value change caused by the temperature coefficient of the resistor and the MOS tube in the conventional undervoltage protection circuit, and the change of the threshold value point caused by the temperature can be greatly improved.
Description
Technical Field
The utility model relates to a module technical field makes a video recording especially relates to a miniaturized two camera modules.
Background
At present, a conventional under-voltage protection circuit structure is shown in fig. 1, in which resistors 003, 004 and 006 are all the same type of resistors, MOS transistors 0005 and 012 are NMOS transistors, and 007 is an inverter. When the power supply voltage starts to increase and exceeds the breakdown voltage of the zener 002, the resistors 003, 004 start to divide, and when the voltage across the resistor 004 exceeds the field-on voltage of the MOS 005, the MOS is turned on, the voltage is pulled to ground, and a high level is generated after passing through the inverter 007. When the voltage drops, the MOS transistor 012 functions as a positive feedback to provide a delay for the under-voltage protection, as shown in fig. 2.
Under the condition of different temperature and process influences, the high/low threshold voltage UVH/UV L of the undervoltage protection circuit with the structure has obvious deviation, the main reason is that the threshold voltage of the MOS tube 005 has a negative temperature coefficient, and therefore, in order to eliminate the deviation of the high/low threshold voltage UVH/UV L of the undervoltage protection, additional temperature compensation is needed.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a simple structure is reliable, realize with low costs and temperature compensation effect obvious have temperature compensation's undervoltage protection circuit.
In order to achieve the above object, the present invention adopts the technical solution that an under-voltage protection circuit with temperature compensation comprises a diode, a zener, first to fourth resistors, first to fifth MOS transistors, and a phase inverter, wherein the anode of the diode is connected to a power supply, the cathode of the diode is connected to the cathode of the zener, the anode of the zener is connected to one end of the first resistor, the other end of the first resistor is connected in series with one end of the second resistor, the other end of the second resistor is grounded, one end of the third resistor is connected to the power supply, the other end of the third resistor is connected to the input end of the phase inverter, the gate of the first MOS transistor is connected between the first resistor and the second resistor, the source of the first MOS transistor is grounded, the drain of the first MOS transistor is connected to the input end of the phase inverter, one end of the fourth resistor is connected between the diode and the zener, the other end of the third MOS transistor is connected to the source of the second MOS transistor, the gate of the, the drain electrode of the second MOS tube is connected with the drain electrode of the third MOS tube, the grid electrodes of the third MOS tube and the fourth MOS tube are interconnected, the source electrodes of the third MOS tube and the fourth MOS tube are grounded, the grid electrode of the third MOS tube is connected with the drain electrode, the drain electrode of the fourth MOS tube is connected between the first resistor and the second resistor, the source electrode of the fifth MOS tube is connected between the first resistor and the second resistor, the drain electrode of the fifth MOS tube is connected between the first resistor and the anode of the Zener tube, and the grid electrode of the fifth MOS tube is connected with the output end of the phase inverter.
As an improvement of the present invention, the gate source voltage temperature system of the first MOS transistor and the second MOS transistor can compensate each other.
As an improvement of the utility model, first MOS pipe adopts the NMOS pipe, and second MOS pipe adopts the PMOS pipe.
As an improvement of the utility model, the third MOS pipe and the fourth MOS pipe adopt the NMOS pipe.
As an improvement of the present invention, the types of the first resistor, the second resistor, and the fourth resistor are kept consistent.
As an improvement of the present invention, the breakdown voltage of the zener has a positive temperature coefficient, and the fourth resistor has a negative temperature coefficient.
As an improvement of the utility model, the temperature coefficient of diode and Zener's pipe can compensate each other.
Compared with the prior art, the utility model discloses a circuit overall structure design benefit, and is rational in infrastructure simple, realize with low costs, through using by the fourth resistance, the temperature compensation module that second to fourth MOS pipe are constituteed compensates the undervoltage protection high/low threshold voltage's that the temperature coefficient of first and second resistance and first and fifth MOS pipe brought deviation, and use the diode to compensate the breakdown voltage temperature coefficient of Zener's pipe, the simple structure of temperature compensation module, easily realize and realize with low costs, its temperature compensation effect is obvious, can greatly improve the change of the undervoltage protection high/low threshold voltage point that the temperature brought in the circuit.
Drawings
Fig. 1 is a diagram of a conventional undervoltage protection circuit.
Fig. 2 is a voltage waveform diagram of a conventional undervoltage protection circuit.
Fig. 3 is a schematic diagram of the under-voltage protection circuit with temperature compensation according to the present invention.
Detailed Description
For the purposes of promoting an understanding and appreciation of the invention, the invention will be further described and illustrated in connection with the accompanying drawings.
As shown in fig. 3, for the under-voltage protection circuit with temperature compensation proposed by the present invention, including diode 001, zener 002, first to fourth resistors 008, first to fifth MOS transistors 012, and inverter 007, the anode of diode 001 is connected to the power supply, the cathode of diode 001 is connected to the cathode of zener 002, the anode of zener 002 is connected to one end of first resistor 003, the other end of first resistor 003 is connected in series with one end of second resistor 004, the other end of second resistor 004 is grounded, one end of third resistor 006 is connected to the power supply, the other end is connected to the input end of inverter 007, the gate of first MOS transistor 005 is connected between first resistor 003 and second resistor 004, the source of first MOS transistor 005 is grounded, the drain of first MOS transistor 005 is connected to the input end of inverter 007, one end of fourth resistor 008 is connected between diode 001 and zener 002, the other end is connected to the source of second transistor 009, the grid of second MOS pipe 009 connects the positive pole of neat nanotube 002, the drain-source resistance of second MOS pipe 009 connects the drain-source resistance of third MOS pipe 010, the grid interconnection of third MOS pipe 010 and fourth MOS pipe 011, the source electrode ground connection of third MOS pipe 010 and fourth MOS pipe 011, the drain-source resistance is connected to the grid of third MOS pipe 010, the drain-source resistance of fourth MOS pipe 011 connects between first resistance 003 and second resistance 004, the source electrode of fifth MOS pipe 012 connects between first resistance 003 and second resistance 004, the drain-source resistance of fifth MOS pipe 012 connects between first resistance 003 and the positive pole of neat nanotube 002, the output of phase inverter is connected to the grid of fifth MOS pipe 012.
The gate-source voltage temperature systems of the first MOS transistor 005 and the second MOS transistor 009 can compensate each other. Preferably, the first MOS transistor 005 is an NMOS transistor, and the second MOS transistor 009 is a PMOS transistor.
Furthermore, the third MOS transistor 010 and the fourth MOS transistor 011 adopt NMOS transistors.
Further, the types of the first resistance 003, the second resistance 004, and the fourth resistance 008 are kept uniform.
Further, the breakdown voltage of the zener 002 has a positive temperature coefficient, and the fourth resistor 008 has a negative temperature coefficient.
Further, the temperature coefficients of the diode 001 and the zener 002 can compensate each other.
After the power voltage rises and exceeds the breakdown voltage of the Zener diode 002, the fourth resistor 008 and the second MOS transistor 009 start to generate current with the current value of
I=
Wherein, V of the Zener tube 002ZHas positive temperature coefficient, the resistance R of the fourth resistor 008 has negative temperature coefficient, and the gate-source voltage V of the second MOS transistor 009GSHas a negative temperature coefficient, so that the current has a positive temperature coefficient here.
Since the current on the main circuit has a positive temperature coefficient, the voltage of the second resistor 004 is
In the above equation, VDD is the power supply voltage, and the first resistor 003 and the second resistor 004 are the same type of resistor, so that
It is possible to omit,
after the positive temperature coefficient current copied by the current mirror formed by the third MOS transistor 010 and the fourth MOS transistor 011 is drawn out, the current on the second resistor 004 is at the moment
From this the voltage over the second resistor 004 can be derived
Therefore, the negative temperature coefficient of the voltage of the second resistor 004 is reduced due to the V of the first MOS transistor 005GSThe temperature compensation module is designed to enable the temperature coefficients of the undervoltage protection structure and the temperature compensation module to be consistent, so that the high/low threshold voltage distribution of the undervoltage protection structure under different temperatures and process conditions is more concentrated. The utility model discloses in use V of second MOS pipe 009GSTo compensate for the V of the first MOS transistor 005GSTemperature characteristics of (1).
The technical means disclosed by the scheme of the present invention is not limited to the technical means disclosed by the above embodiments, but also includes the technical scheme formed by the arbitrary combination of the above technical features. It should be noted that, for those skilled in the art, without departing from the principle of the present invention, several improvements and modifications can be made, and these improvements and modifications are also considered as the protection scope of the present invention.
Claims (7)
1. The utility model provides an under-voltage protection circuit with temperature compensation which characterized in that: the high-power-efficiency transistor comprises a diode, a Zener diode, a first resistor, a second resistor, a third resistor, a fourth resistor, a first MOS tube, a fifth MOS tube and a phase inverter, wherein the anode of the diode is connected with a power supply, the cathode of the diode is connected with the cathode of the Zener diode, the anode of the Zener diode is connected with one end of the first resistor, the other end of the first resistor is connected with one end of the second resistor in series, the other end of the second resistor is grounded, one end of the third resistor is connected with the power supply, the other end of the third resistor is connected with the input end of the phase inverter, the grid of the first MOS tube is connected between the first resistor and the second resistor, the source of the first MOS tube is grounded, the drain of the first MOS tube is connected with the input end of the phase inverter, one end of the fourth resistor is connected between the diode and the Zener diode, the other end of the fourth resistor is connected with the source of the second MOS tube, the grid of the second MOS tube is connected with the anode of the Zener tube, the grid electrode of the third MOS tube is connected with the drain electrode, the drain electrode of the fourth MOS tube is connected between the first resistor and the second resistor, the source electrode of the fifth MOS tube is connected between the first resistor and the second resistor, the drain electrode of the fifth MOS tube is connected between the first resistor and the anode of the Zener tube, and the grid electrode of the fifth MOS tube is connected with the output end of the phase inverter.
2. The undervoltage protection circuit with temperature compensation of claim 1, wherein the gate-source voltage temperature systems of the first MOS transistor and the second MOS transistor are capable of compensating each other.
3. The undervoltage protection circuit with temperature compensation of claim 1 or 2, wherein the first MOS transistor is an NMOS transistor, and the second MOS transistor is a PMOS transistor.
4. The undervoltage protection circuit with temperature compensation of claim 3, wherein the third MOS transistor and the fourth MOS transistor are NMOS transistors.
5. The under-voltage protection circuit with temperature compensation of claim 4, wherein the first resistor, the second resistor and the fourth resistor are of the same type.
6. The undervoltage protection circuit with temperature compensation of claim 5, wherein a breakdown voltage of the Zener tube has a positive temperature coefficient and the fourth resistor has a negative temperature coefficient.
7. The under-voltage protection circuit with temperature compensation of claim 6, wherein the temperature coefficients of the diode and the Zener tube can compensate each other.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922388072.9U CN211151511U (en) | 2019-12-26 | 2019-12-26 | Undervoltage protection circuit with temperature compensation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922388072.9U CN211151511U (en) | 2019-12-26 | 2019-12-26 | Undervoltage protection circuit with temperature compensation |
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| Publication Number | Publication Date |
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| CN211151511U true CN211151511U (en) | 2020-07-31 |
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| CN201922388072.9U Active CN211151511U (en) | 2019-12-26 | 2019-12-26 | Undervoltage protection circuit with temperature compensation |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115220519A (en) * | 2022-08-11 | 2022-10-21 | 思瑞浦微电子科技（苏州）股份有限公司 | Zener diode-based temperature compensation circuit and method |
-
2019
- 2019-12-26 CN CN201922388072.9U patent/CN211151511U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115220519A (en) * | 2022-08-11 | 2022-10-21 | 思瑞浦微电子科技（苏州）股份有限公司 | Zener diode-based temperature compensation circuit and method |
| CN115220519B (en) * | 2022-08-11 | 2023-11-28 | 思瑞浦微电子科技（苏州）股份有限公司 | Temperature compensation circuit and method based on Zener diode |
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