CN211125676U - Back passivation laser grooving conductive structure - Google Patents
Back passivation laser grooving conductive structure Download PDFInfo
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- CN211125676U CN211125676U CN201922113260.0U CN201922113260U CN211125676U CN 211125676 U CN211125676 U CN 211125676U CN 201922113260 U CN201922113260 U CN 201922113260U CN 211125676 U CN211125676 U CN 211125676U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The utility model discloses a back of body passivation laser fluting conductive structure. The solar cell passivation film grooving device comprises a plurality of rows of grooving sections which are arranged on a passivation film of a solar cell in parallel, wherein the distances between the grooving sections of each row are equal, a virtual line section is formed between the adjacent grooving sections of each row, each grooving section of each row is formed by connecting 3-10 laser spots, and the grooving sections formed by connecting the laser spots form a straight line section formed by connecting the laser spots in series. After the structure is adopted, the structure has the characteristic of low aperture ratio, the area of the back passivation layer can be increased by 2% -7%, the area of the back passivation layer is greatly increased, the conversion efficiency is improved, in addition, the length and the proportion of the dotted line section and the straight line section are reasonably controlled, the transmission and collection capacity of photon-generated carriers is improved, the three-dimensional photon-generated carriers can be more effectively collected on the basis of reducing the area of the back laser grooving area, namely passivation loss, and the purpose of not influencing the collection of the photon-generated carriers under the condition of low aperture ratio is realized.
Description
Technical Field
The utility model relates to a back of body passivation laser fluting conductive structure belongs to solar cell and makes technical field.
Background
With the continuous development of the industry, the photovoltaic industry is increasingly competitive, and low cost and high efficiency become targets to be pursued together. The selective emitter back contact cell technology (PERC) is produced by seeking a new technology, compared with the conventional single polycrystalline cell technology, the back passivation local back contact cell technology mainly increases three processes of back passivation, back SiNx film deposition and laser punching grooving, wherein the laser punching grooving process is to utilize laser with a certain pulse width to act on a back passivation layer and a back SiNx film layer, a round hole-shaped light spot is formed after the interaction of the generating force of a high-energy monochromatic laser beam and the film layer and heat, a passivation layer and a SiNx covering layer covering the back of the cell in a round hole area are removed, so that screen printing aluminum paste can be effectively contacted with a silicon wafer substrate on the back of the cell, photogenerated carriers can be led out through an Al layer, a local aluminum back field structure is formed, and the rest passivation layer which is not removed by the laser is protected by the SiNx covering layer covering the SiNx layer, the effects of reducing the surface recombination rate and improving the efficiency are exerted.
At present, the aperture ratio (the ratio of the area of a laser drilling slotting structure to the surface area of a battery piece) is 3-8%, two slotting modes are mostly adopted, namely a linear slotting mode is shown in a figure 1, and a line-segment slotting mode is shown in a figure 2, and the linear slotting mode has the advantages that: the silicon chip has better contact with an aluminum back surface field, has higher FF, and has the defects of more recombination centers and lower UOC and Isc; the line segment type slotting has the advantages that: al (Al)2O3The passivation effect is better than that of a straight line which is a slotted graph, the advantages of the passivation effect on the UOC and the Isc are obvious, but the contact resistance can be increased by a line segment slotted contact mode, so that the FF is greatly reduced, and how to set a reasonable laser slotted graph to balance three electrical performance parameters of the UOC, the Isc and the FF is the key for improving the conversion efficiency of the PERC + SE solar cell.
Disclosure of Invention
The to-be-solved technical problem of the utility model is to provide a on the basis of guaranteeing that productivity, cost do not increase, adopt low aperture ratio to promote the back of the body passivation laser fluting conducting structure of Uoc, Isc under the less condition of FF influence.
In order to solve the technical problem, the utility model discloses a back of body passivation laser fluting conductive structure, include the multirow fluting section of arranging in parallel on solar cell's passive film, the interval between each section fluting section of every line equals and forms virtual line segment between every adjacent fluting section of line, and every section fluting section of every line all adopts 3 ~ 10 laser facula to link to each other and constitutes, and the fluting section that adopts the laser facula to link to each other the constitution forms the straightway that concatenates by the laser facula.
The straight line segments of two adjacent rows are arranged in a staggered mode.
The laser spot size is controlled at 35 +/-3 um, and the spacing between adjacent laser spots in each section of the grooving section is controlled at 40-350 um.
The length of the virtual line segment is controlled to be 0.8-1.2 mm.
The virtual line segment accounts for 50% -90% of the straight line segment.
The solar cell is a PERC cell.
After the structure is adopted, each section of the groove section of each row is formed by connecting 3-10 laser spots, the two adjacent rows of straight line sections are arranged in a staggered mode, and the ordered small line sections are arranged in a spaced connection mode, so that the structure has the characteristic of low aperture ratio, the area of a back passivation layer can be increased by 2% -7%, the area of the back passivation layer is greatly increased, the conversion efficiency is improved, in addition, the length and the proportion of the dotted line section and the straight line sections are reasonably controlled, the generation of the photo-generated carriers can be divided into two parts between the adjacent laser grooves (A point) and between the laser grooves in the same row (B point), no matter where the photo-generated carriers are generated, the transmission path of the photo-generated current in the body and the surface is shortened by the mode of dividing a back conduction plane into smaller conductive structure units, namely the small line sections, and the arrangement mode of the small line section with, the transmission and collection capacity of the photon-generated carriers is improved, the three-dimensional photon-generated carriers can be collected more effectively on the basis of reducing the area of a back laser grooving area, namely passivation loss, and the purpose of not influencing the collection of the photon-generated carriers under the condition of low aperture ratio is realized.
Drawings
FIG. 1 is a schematic structural diagram of a conventional linear slot;
FIG. 2 is a schematic diagram of a conventional wire segment architecture;
fig. 3 is the structural schematic diagram of the back passivation laser grooving conductive structure of the present invention.
Detailed Description
The back passivation laser grooving conductive structure of the present invention will be described in detail with reference to the accompanying drawings and the detailed description.
As shown in the figure, the utility model discloses a back passivation laser fluting conducting structure, include multirow fluting section 2 that the parallel was arranged on PERC solar cell's passive film 1, each section of every line interval between the fluting section equals and forms virtual line segment 3 between every line adjacent fluting section, every section fluting section 2 of every line all adopts 3 ~ 10 laser facula to link to each other and constitutes, laser facula size control is at 35 +/-3 um, the interval control of adjacent laser facula is at 40-350um in every section fluting section, virtual line segment 3's length control is at 0.8-1.2mm, virtual line segment accounts for 50% ~ 90 of straightway, virtual-real ratio control is between 0.5 ~ 0.9 promptly, the fluting section that adopts the laser facula to link to each other the constitution forms the straightway that concatenates by the laser facula, the arrangement of staggering of the straightway of two lines of adjacent.
In the manufacturing process, the size of a laser spot is determined by the power of a laser, the power of the laser is selected to be between 85% and 100%, the distance between the spot and the spot is determined by the marking speed and the frequency of the laser together, the marking speed of the laser is 20000-35000mm/s, wherein 35000mm/s is preferred, the frequency of the laser is controlled to be 100-900KHz, wherein 800KHz is preferred, and the capacity of collecting photon-generated carriers can be greatly improved by the slotted conductive structure formed by the process.
The final effect is verified by comparing the prior art with the specific examples of the present invention as follows:
comparative example:
carrying out laser ablation treatment on the monocrystalline silicon wafer subjected to PECVD coating, carrying out silk-screen printing on front and back electrodes, an electric field, sintering treatment, resisting L ID treatment, and finally testing electrical performance, wherein each small line segment in laser ablation is a straight line segment formed by 30 light spots, the size of each light spot is 35um, the distance between every two light spots is 45um, the line distance is 0.95mm, and the aperture ratio of each cell is 3.0 percent, and specific process parameters are as shown in the following table:
example one:
the method comprises the following steps of carrying out laser ablation treatment on a monocrystalline silicon wafer subjected to PECVD film coating, carrying out silk-screen printing on front and back electrodes, an electric field, sintering treatment, resisting L ID treatment, and finally testing electrical performance, wherein each small line segment in laser ablation is a straight line segment formed by connecting 5 laser spots in series, the size of each spot is 35um, the distance between every two adjacent laser spots is 45um, the distance between every two adjacent laser spots is 0.95mm, the aperture ratio of each cell is 1.2%, and specific process parameters are shown in the following table:
example two:
the method comprises the following steps of carrying out laser ablation treatment on a monocrystalline silicon wafer subjected to PECVD film coating, carrying out silk-screen printing on front and back electrodes and an electric field, carrying out sintering treatment, carrying out anti-L ID treatment, and finally testing electrical performance, wherein each small line segment in the laser ablation is a straight line segment formed by connecting 6 laser spots in series, the size of each spot is 35um, the distance between every two laser spots is 45um, the distance between every two laser spots is 0.95mm, and the aperture ratio of each cell is 1.5%, and specific process parameters are shown in the following table:
example three:
the method comprises the following steps of carrying out laser ablation treatment on a monocrystalline silicon wafer subjected to PECVD film coating, carrying out silk-screen printing on front and back electrodes and an electric field, carrying out sintering treatment, carrying out L ID resistance treatment, and finally testing electrical performance, wherein each small line segment in the laser ablation is a straight line segment formed by connecting 7 light spot laser light spots in series, the size of each light spot is 35um, the distance between every two light spots is 45um, the distance between every two light spots is 0.95mm, the aperture ratio of each cell is 1.8%, and specific process parameters are shown in the following table:
electrical property data:
it can be seen from the electrical performance data that as the aperture ratio increases, the conversion efficiency increases, with open circuit voltage, short circuit current decreasing and fill increasing.
Claims (6)
1. A back passivation laser conduction structure is characterized in that: the solar cell passivation film grooving device comprises a plurality of rows of grooving sections (2) which are arranged on a passivation film (1) of a solar cell in parallel, wherein the distances between the grooving sections are equal, a virtual line section (3) is formed between the adjacent grooving sections of each row, each grooving section (2) of each row is formed by connecting 3-10 laser spots, and the grooving sections formed by connecting the laser spots are formed into straight line sections connected in series.
2. The back passivated laser conductive structure of claim 1 wherein: the straight line segments of two adjacent rows are arranged in a staggered mode.
3. The back passivated laser conductive structure according to claim 1 or 2, wherein: the laser spot size is controlled at 35 +/-3 um, and the spacing between adjacent laser spots in each section of the grooving section is controlled at 40-350 um.
4. The back passivated laser conductive structure of claim 3 wherein: the length of the virtual line segment (3) is controlled to be 0.8-1.2 mm.
5. The back passivated laser conductive structure according to claim 1, 2 or 4 wherein: the virtual line segment accounts for 50% -90% of the straight line segment.
6. The back passivated laser conductive structure of claim 5 wherein: the solar cell is a PERC cell.
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| CN201922113260.0U CN211125676U (en) | 2019-11-29 | 2019-11-29 | Back passivation laser grooving conductive structure |
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| CN201922113260.0U CN211125676U (en) | 2019-11-29 | 2019-11-29 | Back passivation laser grooving conductive structure |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112382698A (en) * | 2020-10-30 | 2021-02-19 | 山西潞安太阳能科技有限责任公司 | Single crystal PERC-SE double-sided battery manufacturing method suitable for alkali polishing process |
| CN112510116A (en) * | 2020-11-30 | 2021-03-16 | 山东力诺太阳能电力股份有限公司 | anti-LeTID (LeTid passivation contact) solar cell and production process thereof |
| CN113437161A (en) * | 2021-06-24 | 2021-09-24 | 韩华新能源（启东）有限公司 | Solar cell, preparation method thereof and photovoltaic module |
| CN113634906A (en) * | 2021-08-10 | 2021-11-12 | 通威太阳能（安徽）有限公司 | Laser marking method for HJT solar cell, cell preparation method and cell |
| CN114267742A (en) * | 2021-12-14 | 2022-04-01 | 晋能清洁能源科技股份公司 | Back surface slotting method and structure of PERC solar cell |
-
2019
- 2019-11-29 CN CN201922113260.0U patent/CN211125676U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112382698A (en) * | 2020-10-30 | 2021-02-19 | 山西潞安太阳能科技有限责任公司 | Single crystal PERC-SE double-sided battery manufacturing method suitable for alkali polishing process |
| CN112510116A (en) * | 2020-11-30 | 2021-03-16 | 山东力诺太阳能电力股份有限公司 | anti-LeTID (LeTid passivation contact) solar cell and production process thereof |
| CN113437161A (en) * | 2021-06-24 | 2021-09-24 | 韩华新能源（启东）有限公司 | Solar cell, preparation method thereof and photovoltaic module |
| CN113634906A (en) * | 2021-08-10 | 2021-11-12 | 通威太阳能（安徽）有限公司 | Laser marking method for HJT solar cell, cell preparation method and cell |
| CN114267742A (en) * | 2021-12-14 | 2022-04-01 | 晋能清洁能源科技股份公司 | Back surface slotting method and structure of PERC solar cell |
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