CN109698247B - Method for leading out electrode from back of flexible thin film battery pack - Google Patents
Method for leading out electrode from back of flexible thin film battery pack Download PDFInfo
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- CN109698247B CN109698247B CN201811515093.6A CN201811515093A CN109698247B CN 109698247 B CN109698247 B CN 109698247B CN 201811515093 A CN201811515093 A CN 201811515093A CN 109698247 B CN109698247 B CN 109698247B
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- 239000010409 thin film Substances 0.000 title claims abstract description 34
- 238000000034 method Methods 0.000 title claims abstract description 15
- 238000003466 welding Methods 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims abstract description 8
- 239000012212 insulator Substances 0.000 claims description 13
- 238000004080 punching Methods 0.000 claims description 10
- 238000007639 printing Methods 0.000 claims description 3
- 238000007650 screen-printing Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 238000005516 engineering process Methods 0.000 abstract description 5
- 238000002360 preparation method Methods 0.000 abstract description 5
- 238000005530 etching Methods 0.000 description 7
- 238000009413 insulation Methods 0.000 description 7
- 239000004642 Polyimide Substances 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910001923 silver oxide Inorganic materials 0.000 description 1
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Substances [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0465—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
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- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Connection Of Batteries Or Terminals (AREA)
Abstract
The invention belongs to the field of photovoltaic solar cells, particularly relates to a back leading-out technology of a flexible thin film battery component electrode, and particularly relates to a method for leading a main electrode and an interconnection electrode of a flexible thin film battery component to the back of a cell. The invention carries out breakpoint laser welding and alternate breakpoint mechanical micropore on the electrode of the flexible thin film battery component, and prepares the electrode in the corresponding area on the back. And the front electrodes and the rear electrodes of the adjacent sub-batteries are interconnected in a laser welding mode, and the electrodes of the battery assembly are led to the back surface of the substrate material through mechanical micropore and back electrode preparation. The flexible thin film battery pack electrode back leading-out technology adopted by the invention can effectively reduce the dead zone area of the pack, improve the light-facing surface area of the battery pack and further improve the conversion efficiency of the battery pack.
Description
Technical Field
The invention belongs to the field of photovoltaic solar cells, particularly relates to a back surface leading-out technology of a flexible thin film battery component electrode, and particularly relates to a method for leading a main electrode and an interconnection electrode of a flexible thin film battery component to the back surface of a cell.
Background
With the increasing demand for solar cells having characteristics of flexibility, light weight, and the like, flexible thin film battery modules are widely used. In the process of preparing the flexible thin film component, the area occupied by dividing and interconnecting the thin film batteries is called a dead zone, and the dead zone area of the flexible thin film battery component accounts for the area, so that the surface utilization rate of the batteries is directly influenced. At present, the dead zone area ratio of the flexible thin film battery component is larger than 10%, and the width of the interconnection main gate is the largest part of the whole dead zone ratio.
Because the electrodes of the battery component are basically prepared on the light-facing surface, the width of the interconnected main grid is increased along with the increase of the length of the sub-battery, and the efficiency improvement of the battery component is directly influenced. Therefore, it is very important to provide a technique for leading out the back of the electrode of the flexible thin film battery assembly, so as to reduce the dead area of the battery assembly and improve the photoelectric conversion efficiency of the flexible thin film solar battery assembly.
Disclosure of Invention
In view of the above problems, an object of the present invention is to provide a method for extracting an electrode from the back surface of a flexible thin film battery assembly, so as to increase the effective light receiving area of the battery assembly, and further increase the conversion efficiency of the flexible thin film battery assembly.
In order to achieve the purpose, the invention provides a method for leading out an electrode from the back side of a flexible thin film battery component, which is concretely as follows.
And 2, printing a current collecting grid line under the condition that the interconnection process is not carried out, wherein the current collecting grid line comprises a main grid of the battery assembly and sub-main grids of the sub-batteries, the main grid is used as an electrode of the battery assembly, the sub-main grids are used as electrodes of the sub-batteries, a screen printing device is adopted, the front electrode insulation is used as a reference position, the sub-main grids are positioned between the back electrode insulation and the front electrode insulation, and the line width of the current collecting grid line is 0.2 mu m.
And 3, adopting laser welding equipment, directly irradiating high-power laser on the current collecting grid line, and performing breakpoint type front and rear electrode interconnection welding to connect the front electrode of the adjacent front sub-battery with the back electrode of the rear sub-battery, so as to realize the interconnection of the sub-batteries of the battery assembly.
And 4, adopting mechanical micro-punching equipment, directly punching a mechanical needle on the current collecting grid line, adopting intermittent high-speed punching, staggering with a laser welding area, and carrying out alternate breakpoint mechanical micro-holes on the current collecting grid line, wherein the diameter of each micro-hole is about 0.1 mm.
The invention has the following remarkable technical effects: the invention carries out breakpoint laser welding and alternate breakpoint mechanical micropore on the electrode of the flexible thin film battery component, and prepares the electrode in the corresponding area on the back. And the front electrodes and the rear electrodes of the adjacent sub-batteries are interconnected in a laser welding mode, and the electrodes of the battery pack are led to the back surface of the substrate material through mechanical micropore and back electrode preparation. The invention combines the technologies of laser welding, mechanical micropore, conductive silver wire preparation and the like to lead the main electrode (main grid) and the interconnection electrode (sub-main grid) of the battery component to the back of the battery, thereby improving the utilization rate of the light-facing surface of the thin film battery component and further improving the conversion efficiency of the battery component. According to the invention, the electrode of the battery pack and the interconnection electrode are led to the back side of the substrate, so that the width of the front electrode grid line is reduced, the surface utilization rate of the battery pack is effectively improved, and the efficiency of the battery pack is further improved. The flexible thin film battery pack electrode back leading-out technology adopted by the invention can effectively reduce the dead zone area of the pack, improve the light-facing surface area of the battery pack and further improve the conversion efficiency of the battery pack.
Drawings
Fig. 1 is a structural view of a thin film battery pack according to the present invention.
Fig. 2 is a cross-sectional view of the thin film battery assembly with electrodes directed to the back side.
Fig. 3 is a top view of the front surface of the cell electrode.
Detailed description of the invention
In order to further disclose the contents, features and effects of the present invention, the following embodiments and drawings are combined to further explain the technical solutions of the present invention.
Example 1.
As shown in fig. 1, 2 and 3, the flexible thin film battery assembly includes a flexible thin film battery substrate 1, a back electrode 2, an active layer 3, a front electrode 4, a back electrode insulator 5, a front electrode insulator 6, a current collecting grid line 7, a front and back electrode interconnection weld 8, a mechanical micro-hole 9, and a back electrode 10.
The method for leading out the electrode from the back of the flexible thin film battery assembly specifically comprises the following steps.
Step 1: selecting a polyimide material with the length of 25m as a flexible thin film battery substrate 11 of a flexible silicon thin film solar battery, putting the coiled polyimide material into a magnetron sputtering device, performing plasma purging, cleaning the surface of the polyimide material, and sputtering a silver/zinc oxide layer at 200 ℃ in high vacuum to obtain the back electrode 2.
Step 2: preparation of back electrode insulation 5: etching the back electrode 2 by 1064nm laser to form an etching groove, filling an insulating material in the etching groove to form a back electrode insulator 5, wherein the resistance on two sides of the etching groove reaches 20 MOmega.
And step 3: three layers N, I, P are sequentially deposited on the back electrode 2 in three different reaction chambers of a PECVD (plasma enhanced chemical vapor deposition) apparatus, forming the active layer 3.
And 4, step 4: preparing a front electrode 4 on the active layer 3 by adopting magnetron sputtering equipment; the front electrode 4 is made of transparent conductive indium tin oxide material; the temperature of the chamber is 100 ℃, and the thickness of the front electrode is 70-90 nm.
And etching the front electrode 4 by adopting laser to form an etching groove, and filling an insulating material in the etching groove to form a front electrode insulator 6.
And 5: preparation of current collecting grid line 7 (including main grid and sub-main grid): and a screen printing device is adopted, the front electrode insulation 6 is used as a reference position, the sub-main grid lines are positioned between the back electrode insulation 5 and the front electrode insulation 6, and the current collecting grid lines 7 are printed, wherein the printing width is about 0.2 mu m.
Step 6: preparing a front electrode and a rear electrode in an interconnected manner: and performing breakpoint welding on the current collecting grid line by adopting laser welding equipment, namely performing interconnection welding 8 on the front electrode and the rear electrode, so that the front electrode of one sub-battery is connected with the back electrode of the other sub-battery.
And 7: electrodes lead to the back side of the substrate: mechanical micropore 9 is prepared on a current collecting grid line by adopting mechanical micro-punching equipment, and the diameter of the micropore is about 0.1 mm.
And 8, preparing an electrode in the punching area on the back surface of the flexible thin film battery substrate 1 to obtain a back electrode 10, wherein the width of the interconnected electrode is 1.2mm, and the width of the main electrode is 3 mm.
While the present invention has been described in detail with reference to the preferred embodiments, it should be understood that the above description should not be taken as limiting the invention. Various modifications and alterations to this invention will become apparent to those skilled in the art upon reading the foregoing description. Accordingly, the scope of the invention should be determined from the following claims.
Claims (1)
1. A method for leading out electrodes from the back of a flexible thin film battery assembly is characterized by comprising a flexible thin film battery substrate (1), a back electrode (2), an active layer (3), a front electrode (4), a back electrode insulator (5), a front electrode insulator (6), a current collecting grid line (7), a front electrode and a back electrode which are mutually welded (8), mechanical micropores (9) and a back electrode (10); the method is characterized by comprising the following steps:
step 1, sequentially preparing a back electrode (2), a back electrode insulator (5), an active layer (3), a front electrode (4) and a front electrode insulator (6) on a flexible thin film battery substrate to obtain a flexible material; dividing the flexible material into a plurality of sub-cells;
step 2, under the condition that the interconnection process is not carried out, firstly printing a current collection grid line (7), wherein the current collection grid line comprises a main grid of the battery assembly and sub-main grids of each sub-battery, adopting screen printing equipment, taking a front electrode insulator (6) as a reference position, positioning the sub-main grids between a back electrode insulator (5) and the front electrode insulator (6), and enabling the width of the current collection grid line (7) to be 0.2 mu m;
step 3, laser welding equipment is adopted, laser is directly irradiated on the current collecting grid line (7), and breakpoint type front and rear electrode interconnection welding (8) is carried out, so that a front electrode of an adjacent front sub-battery is connected with a back electrode of a rear sub-battery, and the interconnection of sub-batteries of the battery assembly is realized;
step 4, adopting mechanical micro-punching equipment, directly punching a mechanical needle head on the current collecting grid line (7), adopting discontinuous high-speed punching, staggering laser welding areas, and carrying out alternate breakpoint mechanical micropores (9) on the current collecting grid line, wherein the diameter of the micropores is 0.1 mm;
and 5, preparing a back electrode (10) in a punching area on the back surface of the flexible thin film battery substrate (1) by adopting a dispensing or mask low-temperature sputtering process, wherein the width of the main interconnected sub-grid is 1.2mm, and the line width of the total electrode grid is 3 mm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811515093.6A CN109698247B (en) | 2018-12-12 | 2018-12-12 | Method for leading out electrode from back of flexible thin film battery pack |
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| CN201811515093.6A CN109698247B (en) | 2018-12-12 | 2018-12-12 | Method for leading out electrode from back of flexible thin film battery pack |
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| CN109698247A CN109698247A (en) | 2019-04-30 |
| CN109698247B true CN109698247B (en) | 2020-08-14 |
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| CN111599876B (en) * | 2020-06-02 | 2022-09-02 | 上海空间电源研究所 | Preparation method of plastic substrate thin film battery for leading front electrode to other side of battery |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002373995A (en) * | 2001-06-15 | 2002-12-26 | Honda Motor Co Ltd | Manufacturing method for solar cell |
| CN204391137U (en) * | 2015-01-21 | 2015-06-10 | 深圳市创益新能源科技有限公司 | A kind of amorphous silicon thin-film solar cell |
| CN204885182U (en) * | 2015-01-21 | 2015-12-16 | 李毅 | Silica -based thin -film solar cell |
| CN105206693A (en) * | 2014-06-19 | 2015-12-30 | 中国科学院大连化学物理研究所 | Flexible thin-film solar cell structure and preparation method |
| CN105449037A (en) * | 2015-12-08 | 2016-03-30 | 中国电子科技集团公司第十八研究所 | Preparation method of flexible thin-film solar cell module |
| CN105826407A (en) * | 2016-03-21 | 2016-08-03 | 无锡携创新能源科技有限公司 | Back contact technology battery assembly and manufacturing method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101419990B (en) * | 2007-10-25 | 2012-10-17 | 上海空间电源研究所 | Flexible thin-film solar cell component |
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- 2018-12-12 CN CN201811515093.6A patent/CN109698247B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002373995A (en) * | 2001-06-15 | 2002-12-26 | Honda Motor Co Ltd | Manufacturing method for solar cell |
| CN105206693A (en) * | 2014-06-19 | 2015-12-30 | 中国科学院大连化学物理研究所 | Flexible thin-film solar cell structure and preparation method |
| CN204391137U (en) * | 2015-01-21 | 2015-06-10 | 深圳市创益新能源科技有限公司 | A kind of amorphous silicon thin-film solar cell |
| CN204885182U (en) * | 2015-01-21 | 2015-12-16 | 李毅 | Silica -based thin -film solar cell |
| CN105449037A (en) * | 2015-12-08 | 2016-03-30 | 中国电子科技集团公司第十八研究所 | Preparation method of flexible thin-film solar cell module |
| CN105826407A (en) * | 2016-03-21 | 2016-08-03 | 无锡携创新能源科技有限公司 | Back contact technology battery assembly and manufacturing method thereof |
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