KR101209820B1 - A thin film solar cell and fabrication method thereof - Google Patents

A thin film solar cell and fabrication method thereof Download PDF

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KR101209820B1
KR101209820B1 KR1020110034790A KR20110034790A KR101209820B1 KR 101209820 B1 KR101209820 B1 KR 101209820B1 KR 1020110034790 A KR1020110034790 A KR 1020110034790A KR 20110034790 A KR20110034790 A KR 20110034790A KR 101209820 B1 KR101209820 B1 KR 101209820B1
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electrode layer
solar cell
thin film
separator
film solar
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KR20120117189A (en
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인정환
정황기
김광복
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금호전기주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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Abstract

According to the present invention, a metal electrode layer is formed on one surface of the thin film solar cell transparent electrode layer to provide a path through which current can move, resulting in low sheet resistance, and by adjusting the length of the thin film solar cell, the light receiving area of the transparent electrode layer is thin. The ratio of the total area of the solar cell can be increased, and a metal electrode layer is formed on one surface of the transparent electrode layer to provide a path for current flow, thereby reducing the thickness of the transparent electrode layer, thereby increasing the transmittance of solar light, and one surface of the transparent electrode layer. The present invention provides a thin film solar cell and a method of manufacturing the same, by forming a metal electrode layer having a low resistance, thereby providing a current moving path, thereby reducing power loss caused by current.
The thin film solar cell of the present invention is a substrate; A back electrode layer formed on the substrate and spaced apart by a first separator; A photoelectric conversion layer formed on the rear electrode layer and spaced apart by a third separator, the photoelectric conversion layer including a second separator; And a transparent electrode layer formed on the photoelectric conversion layer spaced apart by a third separator and contacting the back electrode layer through the second separator. And a band-shaped metal electrode layer formed on one surface of the transparent electrode layer and perpendicular to the forming direction of the third separator.

Description

Thin film solar cell and manufacturing method thereof {A THIN FILM SOLAR CELL AND FABRICATION METHOD THEREOF}

The present invention relates to a thin film solar cell, by forming a metal electrode layer on one surface of the thin film solar cell transparent electrode layer and increasing the width of the thin film solar cell increases the ratio of the light receiving area of the transparent electrode layer to the total area of the thin film solar cell. The present invention relates to a thin film solar cell and a method for manufacturing the same, which can reduce power loss due to a current flowing through a transparent electrode layer.

Since the transparent electrode layer of the thin film solar cell must transmit sunlight, glass is generally used. However, since the sheet resistance of the transparent electrode layer is more than 10,000 times larger than that of a general metal, the power loss caused by the current flowing through the transparent electrode layer reduces the light conversion efficiency of the thin film solar cell. As a solution to this problem, a unit cell series connection method has been developed by micro-patterning, which is a method of forming a long, thin unit cell by connecting a large area solar cell and connecting them in series. This method reduces the power reduction caused by the resistance of the transparent electrode layer by reducing the current flowing through the transparent electrode by reducing the area of the unit cell. The unit cell series connection method using fine patterning is mainly applied to thin film solar cells based on glass substrates. Research into applying this method to solar cells with flexible substrates is underway, but it is not yet applied to actual products. Another method is to compensate for the low electrical conductivity of the transparent electrode layer using a metal grid, similar to that used in silicon solar cells. This method is based on glass substrate-based thin film solar cells using large area substrates and large area deposition methods. It is difficult to use in batteries and is mainly used for flexible thin film solar cells that make small area unit cells.

In a solar cell using a unit cell series connection method by fine patterning, a dead area inevitably cannot be generated due to the patterning width and the interval between the patterning. At this time, if the width of the unit cell is increased to increase the ratio of the light-receiving area to the total area except the dead area, the power loss caused by the transparent electrode layer is increased, and thus the overall efficiency does not increase.

The present invention forms a band-shaped metal electrode layer on one surface of the transparent electrode layer in the thin film solar cell adopting a unit cell series connection method by fine patterning, and provides a path through which current can move, resulting in sheet resistance of the transparent electrode layer. Provided is a thin film solar cell and a method of manufacturing the same.

In addition, the present invention provides a thin film solar cell and a method of manufacturing the same, by adjusting the width of the thin film solar cell to increase the ratio of the light receiving area of the thin film solar cell to the total area of the thin film solar cell.

In addition, the present invention forms a band-shaped metal electrode layer on one surface of the transparent electrode layer to provide a path for current flow, so that the thin film solar cell that can increase the transmittance of sunlight by reducing the thickness of the transparent electrode layer required for smooth current flow; It provides a manufacturing method.

In addition, the present invention provides a thin film solar cell and a method for manufacturing the same, which can reduce the power loss due to the current passing through the transparent electrode layer by providing a path of current by forming a metal electrode layer with a low resistance on the upper surface of the transparent electrode layer. .

The thin film solar cell of the present invention is a substrate; A back electrode layer formed on the substrate and spaced apart from each other by a first separator; A photoelectric conversion layer formed spaced apart from each other by a third separator on the rear electrode layer and having a second separator; A transparent electrode layer formed on the photoelectric conversion layer spaced apart from each other by the third separator and contacting the back electrode layer through the second separator; And a band-shaped metal electrode layer formed on one surface of the transparent electrode layer and perpendicular to the forming direction of the third separator.

The metal electrode layer has a width of 5 to 500 um.

The metal electrode layer is characterized in that the plurality of metal lines are formed so as to be spaced apart in parallel to each other on one surface of the transparent electrode layer.

The metal electrode layer has a thickness of 30 nm to 100 um.

The metal electrode layer includes any one of silver, copper, and aluminum.

According to an aspect of the present invention, there is provided a method of manufacturing a thin film solar cell, including forming a back electrode layer spaced apart from each other by a first separator on an upper portion of a substrate; Forming a photoelectric conversion layer spaced apart from each other by a third separator on the rear electrode layer and having a second separator; Forming a transparent electrode layer spaced apart from each other by the third separator on the photoelectric conversion layer and in contact with the back electrode layer through the second separator; And forming a band-shaped metal electrode layer perpendicular to the formation direction of the third separator on one surface of the transparent electrode layer.

The metal electrode layer is characterized in that the width of 5 to 500um.

The forming of the metal electrode layer may include depositing a metal by evaporation or spattering after forming a mask.

The forming of the metal electrode layer is characterized by using a screen printing method.

The present invention can form a strip-shaped metal electrode layer on the upper surface perpendicular to the micropatterning direction to provide a path through which current can move, thereby lowering sheet resistance.

The present invention can increase the ratio of the light receiving area of the transparent electrode layer to the total area of the thin film solar cell by adjusting the width of the thin film solar cell.

According to the present invention, since a metal electrode layer is formed on one surface of the transparent electrode layer to provide a current moving path, the thickness of the transparent electrode layer required for smooth movement of current can be reduced, thereby increasing solar transmittance.

The present invention can reduce the power loss due to current by forming a band-shaped metal electrode layer having a low resistance on one surface of the transparent electrode layer to provide a movement path of the current.

1 is a block diagram of a thin film solar cell according to an embodiment of the present invention;
2A is a perspective view of a thin film solar cell according to a conventional embodiment;
Figure 2b is a perspective view of a thin film solar cell according to an embodiment of the present invention; And
3 is a flowchart of a method of manufacturing a thin film solar cell according to an embodiment of the present invention.

Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings. In the drawings, the same reference numerals are used to designate the same or similar components, and the same reference numerals will be used to designate the same or similar components. Detailed descriptions of known functions and configurations are omitted.

1 is a block diagram of a thin film solar cell according to an embodiment of the present invention.

The thin film solar cell according to the embodiment of the present invention includes a substrate 100; A back electrode layer 110 formed on the substrate 100 and spaced apart from each other by the first separator P1; A photoelectric conversion layer 120 formed on the rear electrode layer by being spaced apart from each other by a third separator P3 and having a second separator P2; And a transparent electrode layer 130 formed on the photoelectric conversion layer 120 so as to be spaced apart from each other by the third separator P3 and contacting the back electrode layer 110 through the second separator P2. And a band-shaped metal electrode layer 140 formed on one surface of the transparent electrode layer 130 and perpendicular to the forming direction of the third separator P3. The thin film solar cell is separated into unit cells by the third separator, and the forming direction of the third separator is synonymous with the fine patterning direction of the unit cell thin film solar cell.

Glass is generally used as the material of the substrate 100, but other ceramic substrates such as alumina, stainless steel, metal substrates such as Cu tape, and polymers may also be used. In this embodiment, by using soda ash glass as the material of the substrate 100, Na ions generated from the glass are diffused through the grain boundary surface with the back electrode layer 110 and onto the photoelectric conversion layer 120 thereon to grow grains and surface phenomena. This improves the hole density and consequently improves the solar cell characteristics.

The back electrode layer 110 is formed on the upper surface of the substrate 100. The back electrode layer 110 may be formed of any one material selected from the group consisting of Ag, Mo, Al, Mn, Zn, Ni, Cu, and compounds thereof. Preferably, the back electrode layer 110 has excellent electrical conductivity, resistive contact, and high temperature stability. Molybdenum (Mo) is preferably selected.

The rear electrode layer 110 is spaced at a predetermined interval by the first separator P1, thereby reducing the current flowing by reducing the area of the thin film solar cell unit cell and reducing power loss due to the specific resistance of the transparent electrode layer 130. Improve conversion efficiency The photoelectric conversion layer 120 is formed on the rear electrode layer 110. The photoelectric conversion layer 120 is in contact with the substrate 100 through the first separation unit P1, but little current flows in the first separation unit P1 due to the shunt resistance.

The photoelectric conversion layer 120 is provided with a second separation part P2 which is a predetermined space so that the back electrode layer 110 and the transparent electrode layer 130 can be in electrical contact with each other. The second separator P2 provides a predetermined space between the photoelectric conversion layers 120 and serves to connect the unit cells of the thin film solar cell in series. The photoelectric conversion layer 120 may deposit a silicon-based semiconductor material using a plasma CVD method, or the like, and may have a PIN structure in which a P-type semiconductor layer, an I-type semiconductor layer, and an N-type semiconductor layer are sequentially stacked. When the photoelectric conversion layer 120 is formed in a PIN structure, the I-type semiconductor layer is depleted by the P-type semiconductor layer and the N-type semiconductor layer to generate an electric field therein, and is generated by sunlight. Holes and electrons are drift by the electric field and are collected in the P-type semiconductor layer and the N-type semiconductor layer, respectively. When the photoelectric conversion layer 120 is formed in a PIN structure, it is preferable to form a P-type semiconductor layer first, and then form an I-type semiconductor layer and an N-type semiconductor layer in order. This is to form a P-type semiconductor layer close to the light-receiving surface in order to maximize the collection efficiency due to incident light since it is lower than the drift mobility of.

Since the transparent electrode layer 130 is a surface on which solar light is incident, it is important to allow the incident sunlight to be absorbed to the inside of the solar cell as much as possible. For this purpose, a texturing process is added to the transparent electrode layer 130. Can be done with The texturing process is a process of forming a material surface into an uneven structure and processing it into a shape like a surface of a fabric, and may be performed through a groove forming process using a photolithography method. When such a texture processing process is performed on the transparent electrode layer 130, the ratio of incident solar light to the outside of the solar cell is reduced, and the ratio of being absorbed into the solar cell by scattering of incident solar light is To increase, there is an effect that the efficiency of the solar cell is enhanced. The transparent electrode layer 130 is formed by sputtering or MOCVD (Metal Organic Chemical Vapor Deposition) method of a transparent conductive material such as ZnO, ZnO: B, ZnO: Al, SnO2, SnO2: F, Indium Tin Oxide (ITO), or the like. And the like can be laminated. The transparent electrode layer 130 may be composed of a plurality of layers consisting of an i-ZnO layer and an AZO layer. By blocking the coupling with the photoelectric conversion layer 120 by the i-ZnO layer of the transparent electrode layer 130 can reduce the risk of short circuit of the solar cell can increase the efficiency of the thin film solar cell. In the case of CIS and CIGS thin film solar cells, the transparent electrode layer 130 functions as an N-type semiconductor layer to form a PN junction with a CIS thin film or CIGS thin film, which is a light absorption layer.

The metal electrode layer 140 is formed on the upper surface of the transparent electrode layer 130. The metal electrode layer 140 may be formed with a plurality of grid lines spaced apart in parallel. Since the transparent electrode layer 130 has a specific resistance more than 10,000 times that of the metal, a large power loss occurs while the current passes through the transparent electrode layer 130. Therefore, a low resistance band-shaped metal electrode layer 140 is formed on the upper surface of the transparent electrode layer 130 so as to be perpendicular to the third separator P3 to provide a path for current to pass through the transparent electrode layer 130. By minimizing the length of current, power loss can be minimized. The metal electrode layer 140 has a thickness of 30 nm to 100 um, but when the thickness is thinner than 30 nm, the resistance of the metal electrode layer 140 is so large that there is no significant difference with the sheet resistance of the transparent electrode layer 130, and the thickness is greater than 100 um. When the thickness is thick, the light receiving area of the transparent electrode layer 130 is reduced due to the shadowing effect of the metal electrode layer 140. The width of the metal electrode layer 140 is formed to be 5 to 500um. This is because when the width of the metal electrode layer 140 is less than or equal to 5 μm, the current cannot move smoothly, and when the width is greater than or equal to 500 μm, the light receiving area of the thin film solar cell is reduced. The material of the metal electrode layer 140 may be any one of silver, copper, and aluminum having high conductivity and excellent adhesion to the transparent electrode layer 130. The material of the metal electrode layer does not necessarily need to be a metal, and a material having better electrical conductivity than the transparent electrode layer is sufficient. Therefore, a graphene thin film having excellent electrical conductivity may be used as the metal electrode layer.

In the exemplary embodiment of the present invention, the metal electrode layer is formed on the upper surface of the transparent electrode layer as an example. However, when the metal electrode layer is formed on the lower surface of the transparent electrode layer or the transparent electrode layer is in electrical contact with the metal electrode layer, the same effect as the present invention can be obtained. Is self-explanatory.

The third separator P3 separates the thin film solar cell into cells by forming a predetermined space between the metal electrode layer 140, the transparent electrode layer 130, and the photoelectric conversion layer 120 to prevent current from flowing.

2A is a perspective view of a thin film solar cell according to a conventional embodiment.

When the length of current passing through the transparent electrode layer 130 is L, D may be regarded as a dead area electrically insulated by the second separator P2 and the third separator P3. That is, L is a light receiving portion absorbing sunlight from the transparent electrode layer 130, D is a non-light receiving portion. The ratio of the light receiving area of the transparent electrode layer 130 to the total area of the conventional thin film solar cell is

Figure 112011027587948-pat00001

. In other words, if the length of the thin film solar cell is increased, the ratio of the light receiving area is close to 1, but there is a problem in that power loss is increased due to an increase in the current flowing through the unit cell and an increase in the length of the current passing through the transparent electrode layer.

2B is a perspective view of a thin film solar cell according to an embodiment of the present invention.

The current flowing on the metal electrode layer 140 moves to the transparent electrode layer 130 and then flows to the back electrode layer 110. In this case, the length of the current passing through the transparent electrode layer 130 is L equal to the length of the current passing through the transparent electrode layer 130 in FIG. 2A, and the non-light-receiving portion is D and the width of the metal electrode layer 140 is a. If the length of the remaining portion of the solar cell excluding the second separator P2 and the third separator P3 is X, the light receiving area of the transparent electrode layer 130 relative to the total area of the thin film solar cell of the present invention is determined. The ratio is

Figure 112011027587948-pat00002

. That is, if the length of the current passing through the transparent electrode layer 130 is equal to the length of the current passing through the transparent electrode layer 130 when the metal electrode layer 140 is not present, the ratio of the light receiving area to the total area of the thin film solar cell. Is determined by X, which is the length of the remaining portion of the solar cell except for the second separator P2 and the third separator P3, and a, the width of the metal electrode layer 140.

Hereinafter, assuming that the length of the current passing through the transparent electrode layer 130 is the same, the ratio of the light-receiving area to the total area of the thin film solar cell is compared by Equation (1) and Equation (2).

Assuming that D = 1 mm, L = 5 mm, a = 0.1 mm, and X = 1 cm, the ratio of the light-receiving area to the total area of the thin-film solar cell is expressed as a percentage, which is 83.3% in Equation (1), ) Is 90.0%. That is, even if the current passes through the transparent electrode layer 130, even if the length of the unit cell of the thin film solar cell is sufficiently long, the ratio of the light receiving area to the total area of the thin film solar cell can be increased. Since the length of the current passing through the 130 does not change, power loss due to the current flowing through the transparent electrode layer 130 does not increase. However, as the X value increases, the power loss due to the current flowing through the metal electrode layer 140 also increases. Accordingly, the value of X is selected to maximize the light conversion efficiency of the thin film solar cell by comparing the power loss due to the current flowing through the metal electrode layer 140 with the ratio of the light receiving area to the total area of the thin film solar cell. . Therefore, the light conversion efficiency can be improved by reducing the power loss caused by the resistance of the metal electrode layer and the transparent electrode layer by increasing the values of X and a and increasing the ratio of the light receiving area.

3 is a flowchart of a method of manufacturing a thin film solar cell according to an embodiment of the present invention.

Method of manufacturing a thin film solar cell according to an embodiment of the present invention comprises the steps of forming a back electrode layer 110 spaced apart from each other by a first separation unit (P1) on the upper portion of the substrate 100; Forming a photoelectric conversion layer 120 spaced apart from each other by a third separator P3 on the back electrode layer 110 and having a second separator P2; Forming a transparent electrode layer 130 spaced apart from each other by the third separator P3 on the photoelectric conversion layer 120 and in contact with the back electrode layer 110 through the second separator P2; And forming a strip-shaped metal electrode layer 140 on the transparent electrode layer 130.

First, the back electrode layer 110 is formed on the substrate 100 with a thickness of 200 nm to 1 μm by MOCVD or sputtering. Thereafter, a first separation part P1 is formed to space the back electrode layer 110 at a predetermined interval by using a laser or mechanical scribing equipment (S301).

The photoelectric conversion layer 120 formed on the back electrode layer 110 may be deposited by a physical or chemical method. Physical methods include vacuum deposition, sputtering, selenization, and the like, and chemical methods include electrodeposition or chemical vapor deposition (CVD). Thereafter, the second separation unit P2 is formed in the photoelectric conversion layer 120 at a predetermined interval by using a laser or mechanical scribing equipment. The second separator P2 may be formed to be spaced apart from the first separator P1. (S302)

The transparent electrode layer 130 may be formed to have a uniform thickness by MOCVD or sputtering. The transparent electrode layer 130 is formed in the upper portion of the photoelectric conversion layer 120 and in the second separator P2 and is electrically connected to the back electrode layer 110. (S303)

As the metal electrode layer 140 formed on the upper surface of the transparent electrode layer 130, a screen printing method using sputtering or silver paste may be used. Preferably, the surface of the transparent electrode layer 130 may be formed using a vacuum deposition method using a mask. The metal electrode layer 140 may be formed only at a desired portion. (S304)

Thereafter, a third separator P3 is formed by forming a third space P3 so that the metal electrode layer 140, the transparent electrode layer 130, and the photoelectric conversion layer 120 can be separated from each other using a laser or mechanical scribing equipment. Separate solar cells by cell. (S305)

The order of the thin films formed on the substrate may be changed according to the type of the thin film solar cell, and in some cases, a strip-shaped metal electrode may be first formed on the transparent substrate, and then the transparent electrode layer may be formed. Even if the stacking order of the thin film solar cell is changed, when the metal electrode layer is in contact with the transparent electrode layer, the light conversion efficiency of the thin film solar cell may be improved. In addition, the present invention can be applied to both the thin film solar cell to which the unit cell method of the above-described embodiment and various other methods are applied, and the light conversion efficiency can be improved.

Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Terms such as those defined in commonly used dictionaries are to be interpreted as having a meaning consistent with the contextual meaning of the related art and are to be interpreted as either ideal or overly formal in the sense of the present application Do not.

100: substrate 110: back electrode layer
120: photoelectric conversion layer 130: transparent electrode layer
140: metal electrode layer P1: first separator
P2: second separator P3: third separator

Claims (9)

Board;
A back electrode layer formed on the substrate and spaced apart from each other by a first separator;
A photoelectric conversion layer formed spaced apart from each other by a third separator on the rear electrode layer and having a second separator;
A transparent electrode layer formed on the photoelectric conversion layer spaced apart from each other by the third separator and contacting the back electrode layer through the second separator; And
In the thin film solar cell including a band-shaped metal electrode layer formed on one surface of the transparent electrode layer and perpendicular to the forming direction of the third separator,
The ratio of the light receiving area to the total area of the thin film solar cell is determined by the following formula.
Figure 112012056522096-pat00007

(L: length of current passing through the transparent electrode layer, D: length of inactive region,
X: active region length, a: metal electrode layer width) The method of claim 1,
The width of the metal electrode layer is a thin film solar cell, characterized in that the transparent electrode 5 to 500um.
The method of claim 1,
The metal electrode layer is a thin film solar cell, characterized in that a plurality of metal lines are formed so as to be spaced apart in parallel to each other on one surface of the transparent electrode layer.
The method of claim 1,
The thickness of the metal electrode layer is a thin film solar cell, characterized in that 30nm to 100um.
The method of claim 1,
The metal electrode layer is a thin film solar cell including any one of silver, copper and aluminum.
Forming a back electrode layer spaced apart from each other by a first separator on an upper portion of the substrate;
Forming a photoelectric conversion layer spaced apart from each other by a third separator on the rear electrode layer and having a second separator;
Forming a transparent electrode layer spaced apart from each other by the third separator on the photoelectric conversion layer and in contact with the back electrode layer through the second separator; And
In the thin film solar cell manufacturing method comprising the step of forming a band-shaped metal electrode layer perpendicular to the forming direction of the third separator on one surface of the transparent electrode layer,
The ratio of the light receiving area to the total area of the thin film solar cell is a thin film solar cell manufacturing method determined by the following equation.
Figure 112012056522096-pat00008

(L: length of current passing through the transparent electrode layer, D: length of inactive region,
X: active region length, a: metal electrode layer width)
The method according to claim 6,
The width of the metal electrode layer is a thin film solar cell manufacturing method, characterized in that 5 to 500um.
The method according to claim 6,
Forming the metal electrode layer,
After forming a mask, a thin film solar cell manufacturing method characterized in that the deposition of the metal by evaporation deposition or sputtering method.
The method according to claim 6,
Forming the metal electrode layer,
Thin film solar cell manufacturing method characterized by using a screen printing method.
KR1020110034790A 2011-04-14 2011-04-14 A thin film solar cell and fabrication method thereof KR101209820B1 (en)

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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010135637A (en) * 2008-12-05 2010-06-17 Mitsubishi Heavy Ind Ltd Photoelectric conversion device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010135637A (en) * 2008-12-05 2010-06-17 Mitsubishi Heavy Ind Ltd Photoelectric conversion device

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