CN211111068U - Graphene growth device with double-seal structure deposition chamber - Google Patents

Graphene growth device with double-seal structure deposition chamber Download PDF

Info

Publication number
CN211111068U
CN211111068U CN201922124753.4U CN201922124753U CN211111068U CN 211111068 U CN211111068 U CN 211111068U CN 201922124753 U CN201922124753 U CN 201922124753U CN 211111068 U CN211111068 U CN 211111068U
Authority
CN
China
Prior art keywords
sealing
deposition chamber
double
way valve
graphene growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201922124753.4U
Other languages
Chinese (zh)
Inventor
许超
王佳冬
王祥
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xiamen Badou New Material Technology Co ltd
Original Assignee
Xiamen Badou New Material Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xiamen Badou New Material Technology Co ltd filed Critical Xiamen Badou New Material Technology Co ltd
Priority to CN201922124753.4U priority Critical patent/CN211111068U/en
Application granted granted Critical
Publication of CN211111068U publication Critical patent/CN211111068U/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Carbon And Carbon Compounds (AREA)

Abstract

The utility model discloses a graphite alkene growth device with double seal structure deposit room, include: the device comprises a deposition chamber, a heating box, a double-sealing structure, an air pumping system and an air charging system; the deposition chamber is a pipe body with two open ends; the heating box is hermetically wrapped at the outer side of the deposition chamber; the number of the double sealing structures is two, and the double sealing structures are respectively communicated with openings at two ends of the deposition chamber; the double-sealing structure comprises a three-way valve, a sealing pipe and a sealing end head; the reversing port of the three-way valve is communicated with the deposition chamber; an opening at one end of the sealing pipe is communicated with an outlet of the three-way valve; the sealing end is fixed on the opening at the other end of the sealing tube in a sealing way; the number of the air pumping systems is two, and the two air pumping systems are respectively communicated with the inlets of the three-way valves in a sealing way; the inflation system is in sealed communication with the inlet of a three-way valve. The utility model overcomes prior art is when preparing the graphite alkene of a scaling-off, and the equipment leakproofness of appearance is defect such as not good, is favorable to stably preparing high quality large tracts of land graphite alkene.

Description

Graphene growth device with double-seal structure deposition chamber
Technical Field
The utility model relates to a graphite alkene growing device, more specifically the graphite alkene growing device with double seal structure deposit room that says so relates to.
Background
Graphene is a novel nanomaterial of a single-layer two-dimensional honeycomb lattice structure formed by carbon atom arrangement. At present, chemical vapor deposition by using a metal substrate to catalytically decompose carbon-containing source gas molecules is an effective method for preparing large-area high-quality graphene. In the method, firstly, carbon atoms are dissolved in a metal substrate in a deposition chamber in a high-temperature vacuumizing state, and a large amount of dissolved carbon atoms are precipitated on the surface of the metal to form graphene with uniform thickness along with gradual cooling of the temperature. The method can obtain high-quality large-area graphene, and is the most important graphene preparation method at present. And the control of the graphene size depends on the size of the deposition chamber in which it is grown. In practical application, after a deposition chamber of the graphene growth device exceeds a certain size, the tightness of equipment is reduced to different degrees, and even the technical conditions of a specified vacuum state cannot be met, so that the large-area growth process of graphene is limited, and the large-scale production is not facilitated.
Therefore, how to provide a graphene growth apparatus with a good sealing effect for a deposition chamber is an urgent problem to be solved by those skilled in the art.
SUMMERY OF THE UTILITY MODEL
In view of this, the utility model provides a graphite alkene growth device with double seal structure deposit room aims at solving above-mentioned problem.
In order to achieve the above purpose, the utility model adopts the following technical scheme:
a graphene growth apparatus with a double seal structure deposition chamber, comprising: the device comprises a deposition chamber, a heating box, a double-sealing structure, an air pumping system and an air charging system;
the deposition chamber is a pipe body with openings at two ends;
the heating box is hermetically wrapped outside the deposition chamber;
the number of the double sealing structures is two, and the double sealing structures are respectively communicated with openings at two ends of the deposition chamber; the double-sealing structure comprises a three-way valve, a sealing pipe and a sealing end head; the reversing port of the three-way valve is communicated with the deposition chamber; an opening at one end of the sealing pipe is communicated with an outlet of the three-way valve; the sealing end is fixed on the opening at the other end of the sealing tube in a sealing manner;
the number of the air pumping systems is two, and the two air pumping systems are respectively communicated with the inlets of the three-way valves in a sealing way;
the inflation system is communicated with the inlet of the three-way valve in a sealing way.
Through the technical scheme, the utility model provides a graphite alkene growth device with double seal structure deposit room overcomes prior art when the graphite alkene of a preparation scaling-off, and the equipment leakproofness of appearance is defect such as not good, and double seal structure's deposit room can reduce the influence that the product received the pollution simultaneously, is favorable to stably preparing high quality large tracts of land graphite alkene.
It should be explained that, the utility model provides a three-way valve, for the valve that current inside valve body is L shapes, has import, export and switching-over mouth, through control flap's control end, can realize the intercommunication of import and export, import and switching-over mouth and import, export and switching-over mouth all cut off the switching of three kinds of states.
Preferably, in the graphene growing apparatus with a deposition chamber having a double sealing structure, the deposition chamber is a quartz glass tube. The preparation requirement of the graphene is met.
Preferably, in the graphene growing apparatus with a deposition chamber having a double sealing structure, the sealing tube is a quartz glass tube. The preparation requirement of the graphene is met.
Preferably, in the graphene growing apparatus with a deposition chamber having a double sealing structure, the pumping system is a pump with a valve for controlling opening and closing. The gases of the deposition chamber and the sealing tube can be evacuated.
Preferably, in the graphene growing apparatus with a deposition chamber having a double sealing structure, the gas charging system is a gas charging pump with a valve for controlling opening and closing. The deposition chamber can be charged with gas.
Preferably, in the graphene growing apparatus with a deposition chamber having a double sealing structure, the gas filling system further includes a flow control valve. Can control the aeration flow, be favorable to improving the preparation quality of graphite alkene.
Preferably, in the graphene growing apparatus with the deposition chamber having the double sealing structure, the gas filling system is used for injecting an inert gas, or hydrogen, or methane. Can meet the aeration requirement of graphene preparation.
Preferably, in the graphene growth apparatus with a deposition chamber having a double sealing structure, the deposition chamber and the sealing pipe are both internally provided with a gas pressure sensor. The gas pressure in the deposition chamber can be monitored and controlled conveniently.
Preferably, in the graphene growing apparatus with a deposition chamber having a double sealing structure, a temperature sensor is installed inside the heating box. Can monitor the temperature in the heating box and be convenient for control.
Can know via foretell technical scheme, compare with prior art, the utility model discloses a graphite alkene growth device with dual seal structure deposit room has following beneficial effect:
1. the utility model provides a graphite alkene growing device with double seal structure deposit room overcomes prior art when the graphite alkene of a preparation scaling-off, and the equipment leakproofness of appearance is defect such as not good, and double seal structure's deposit room can reduce the influence that the product received the pollution simultaneously, is favorable to stably preparing high quality large tracts of land graphite alkene.
2. The utility model discloses a three-way valve realizes switching, controls simply convenient to use.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a three-way valve provided by the present invention, in which an inlet, an outlet and a reversing port are all cut off;
FIG. 2 is a schematic structural diagram illustrating a state in which an inlet and a reversing port of the three-way valve provided by the present invention are communicated;
fig. 3 is a schematic structural diagram of the inlet and outlet communicating state of the three-way valve provided by the present invention.
Wherein:
1-a deposition chamber;
2-heating the box;
3-double sealing structure;
31-a three-way valve;
32-a sealed tube;
33-sealing the end;
4-an air exhaust system;
5-inflation system.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
Referring to fig. 1, an embodiment of the present invention discloses a graphene growth apparatus with a deposition chamber having a dual-seal structure, including: the device comprises a deposition chamber 1, a heating box 2, a double-sealing structure 3, an air pumping system 4 and an air charging system 5;
the deposition chamber 1 is a pipe body with two open ends;
the heating box 2 is hermetically wrapped on the outer side of the deposition chamber 1;
the number of the double-sealing structures 3 is two, and the double-sealing structures are respectively communicated with openings at two ends of the deposition chamber 1; the double-sealing structure 3 comprises a three-way valve 31, a sealing pipe 32 and a sealing end head 33; the reversing port of the three-way valve 31 is communicated with the deposition chamber 1; an opening at one end of the sealing pipe 32 is communicated with an outlet of the three-way valve 31; the sealing end head 33 is fixed on the opening at the other end of the sealing tube 32 in a sealing way;
the number of the air pumping systems 4 is two, and the two air pumping systems are respectively communicated with the inlet of the three-way valve 31 in a sealing way;
the inflation system 5 is in sealed communication with the inlet of a three-way valve 31.
In order to further optimize the above technical solution, the deposition chamber 1 is a quartz glass tube.
In order to further optimize the above technical solution, the sealing tube 32 is a glass tube made of quartz.
In order to further optimize the above technical solution, the air pumping system 4 is an air pump with a valve for controlling opening and closing.
In order to further optimize the above technical solution, the inflation system 5 is an inflator pump with a control opening and closing valve.
In order to further optimize the above technical solution, the inflation system 5 further has a flow control valve.
In order to further optimize the above solution, the aeration system 5 is used to inject inert gas, or hydrogen, or methane.
In order to further optimize the above technical solution, a gas pressure sensor is installed inside the deposition chamber 1 and the sealing tube 32.
In order to further optimize the above technical solution, a temperature sensor is installed inside the heating box 2.
Utilize the utility model discloses the method of preparation graphite alkene does:
step 1, placing a metal substrate which is processed in advance in a deposition chamber 1;
step 2, adjusting the three-way valve 31 of the double-sealing structure 3 to enable the inlet of the three-way valve to be communicated with the reversing port, referring to the attached drawing 2, simultaneously opening the air pumping system 4, and vacuumizing until the pressure in the deposition chamber 1 is 2-4 × 10-2Torr, forming a vacuum cavity; the three-way valve 31 is then adjusted to place the inlet and outlet in communication, see figure 3, for the sealed tube32, vacuumizing to a vacuum state with the same pressure;
step 3, adjusting the three-way valve 31 to enable the inlet of the three-way valve to be communicated with the reversing port; the gas flow rate of the gas filling system 5 is set to 10sccm, and an inert gas such as argon is injected into the vacuum chamber of the deposition chamber 1;
after step 4 and 10 minutes, the gas charging system 5 is closed, the gas pumping system 4 is opened, and the gas pressure in the deposition chamber 1 is pumped to 2-4 × 10-2Torr;
Step 5, repeating the operation steps 3 and 4 for 3-4 times until the air in the deposition chamber 1 is completely removed;
step 6, setting the gas flow control of the gas charging system 5 to be 10sccm, and injecting hydrogen into the deposition chamber 1;
step 7, raising the temperature of the deposition chamber 1 to 1000 ℃ by using a heating box 2;
step 8, setting the gas flow control of the gas charging system 5 to be 10sccm, and injecting methane into the deposition chamber 1 for 40 minutes;
step 9, cooling, wherein the gas flow of the gas charging system 5 is controlled to be 10sccm, and the gas pressure in the deposition chamber 1 is filled to an atmospheric pressure state by using argon gas;
and step 10, taking out the sample to finish the preparation of the graphene.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (9)

1. The utility model provides a graphite alkene growth device with dual seal structure deposition chamber which characterized in that includes: the device comprises a deposition chamber (1), a heating box (2), a double-sealing structure (3), an air pumping system (4) and an air charging system (5);
the deposition chamber (1) is a pipe body with two open ends;
the heating box (2) is hermetically wrapped at the outer side of the deposition chamber (1);
the number of the double-sealing structures (3) is two, and the double-sealing structures are respectively communicated with openings at two ends of the deposition chamber (1); the double-sealing structure (3) comprises a three-way valve (31), a sealing pipe (32) and a sealing end head (33); the reversing port of the three-way valve (31) is communicated with the deposition chamber (1); an opening at one end of the sealing pipe (32) is communicated with an outlet of the three-way valve (31); the sealing end head (33) is fixed on the opening at the other end of the sealing tube (32) in a sealing manner;
the number of the air pumping systems (4) is two, and the two air pumping systems are respectively communicated with the inlet of the three-way valve (31) in a sealing way;
the inflation system (5) is communicated with the inlet of the three-way valve (31) in a sealing way.
2. The graphene growth apparatus with a deposition chamber having a double sealing structure according to claim 1, wherein the deposition chamber (1) is a quartz glass tube.
3. The graphene growth apparatus with a deposition chamber having a double sealing structure according to claim 1, wherein the sealing tube (32) is a glass tube made of quartz.
4. The graphene growth apparatus with a double-sealed structure deposition chamber according to claim 1, wherein the gas pumping system (4) is a gas pumping pump with a control valve.
5. The graphene growth apparatus with a deposition chamber with a double sealing structure according to claim 1, wherein the gas filling system (5) is a gas filling pump with a control opening and closing valve.
6. The graphene growth apparatus with a double-sealed structure deposition chamber according to claim 5, wherein the gas filling system (5) is further provided with a flow control valve.
7. The graphene growth apparatus with a deposition chamber with a double sealing structure according to any one of claims 1 to 6, wherein the gas filling system (5) is used for injecting inert gas, or hydrogen, or methane.
8. The graphene growth apparatus with a deposition chamber having a double sealing structure according to claim 1, wherein a gas pressure sensor is installed inside each of the deposition chamber (1) and the sealing tube (32).
9. The graphene growth apparatus with a double-sealed structure deposition chamber according to claim 1, wherein a temperature sensor is installed inside the heating box (2).
CN201922124753.4U 2019-12-02 2019-12-02 Graphene growth device with double-seal structure deposition chamber Active CN211111068U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201922124753.4U CN211111068U (en) 2019-12-02 2019-12-02 Graphene growth device with double-seal structure deposition chamber

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201922124753.4U CN211111068U (en) 2019-12-02 2019-12-02 Graphene growth device with double-seal structure deposition chamber

Publications (1)

Publication Number Publication Date
CN211111068U true CN211111068U (en) 2020-07-28

Family

ID=71704408

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201922124753.4U Active CN211111068U (en) 2019-12-02 2019-12-02 Graphene growth device with double-seal structure deposition chamber

Country Status (1)

Country Link
CN (1) CN211111068U (en)

Similar Documents

Publication Publication Date Title
CN102849733B (en) Low-temperature direct preparation method of graphene under double-temperature-zone control, and double-temperature-zone tube furnace
CN107640763B (en) Preparation method of single-layer single crystal graphene
CN104445986B (en) A kind of plating carbon method of the quartz ampoule for crystal growth
CN105752968A (en) Reel-to-reel continuous graphene film growth equipment
CN104498894B (en) Preparation method of porous diamond film
WO2013102360A1 (en) Method for preparing graphene by reaction with cl2 based on annealing with assistant metal film
CN103924208A (en) Method for preparing multilayer graphene thin film
CN108423643A (en) A method of bismuth selenide nanometer sheet being prepared in mica substrate by controlling gas flow
CN211111068U (en) Graphene growth device with double-seal structure deposition chamber
CN204490989U (en) A kind of chemical vapor depsotition equipment based on plasmaassisted growing graphene
CN106830081B (en) A kind of MoO2The preparation method of nanometer rods
CN204874732U (en) Cool off volume to volume plasma reinforcing CVD stove of growing in succession fast
CN107761071B (en) Preparation method of graphene film without defect peak
CN113046728B (en) Atomic layer deposition device and atomic layer deposition method suitable for powder sample
CN212609576U (en) Base plate formula carbon nanotube preparation equipment
JPH01321625A (en) Thin film formation and device therefor
CN109763116B (en) Dual-axis orthogonal rotation system and method for CVD equipment
CN217499494U (en) Two-dimensional material growth equipment
CN109767920B (en) Method for controllably preparing transition metal sulfide heterojunction based on two steps
CN201826011U (en) Water vapor expanding device for growth of oxide semiconductor thin film
CN206502603U (en) A kind of plasma original position etching and the graphene preparation system of assisting growth
CN104561940A (en) Plasma-assisted metal-organic chemical vapor deposition equipment and method
JP2001279441A (en) Method and apparatus for depositing graphite nano fiber
CN111074234A (en) Device and method for growing two-dimensional material based on push-pull trolley mode
CN219951203U (en) CVD growth sintering equipment

Legal Events

Date Code Title Description
GR01 Patent grant
GR01 Patent grant