JPH01321625A - Thin film formation and device therefor - Google Patents

Thin film formation and device therefor

Info

Publication number
JPH01321625A
JPH01321625A JP15342488A JP15342488A JPH01321625A JP H01321625 A JPH01321625 A JP H01321625A JP 15342488 A JP15342488 A JP 15342488A JP 15342488 A JP15342488 A JP 15342488A JP H01321625 A JPH01321625 A JP H01321625A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
film
thin film
etc
film formation
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15342488A
Inventor
Kazufumi Azuma
Mitsuo Nakatani
Tadashi Sonobe
Masahiro Tanaka
Takeshi Watanabe
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To reduce inclusion of impurities mixing into a film to be formed and enable formation of a semiconductor thin film excellent in characteristics at high speed and low temperature by performing evacuation of a vacuum room to attain a high vacuum while heating its wall surface when performing plasma chemical deposition, and maintaining the evacuation at the specified pressure while cooling the wall surface when forming a film on a substrate.
CONSTITUTION: When supplying carrier gas to produce discharge and material gas for film formation onto the specified substrate 6 arranged in a vacuum room 3 so as to cause electron cyclrotron resonance by microwaves and magnetic field to perform plasma chemical deposition, the vacuum room 3 is evacuated into a high vacuum room 3 below 10-3Torr while being heated for the wall face. And when forming a film on the substrate by plasma treatment of material gas for thin film formation, the exhaust is maintained at 10-4-10-2Torr while cooling the wall face. Hereby, gas concentration in vapor phase of H2O, CO2, O2, N2, etc., at the time of film formation can be lowered by one degree of magnitude or below from a conventional device, and according to it the amounts of impurity, etc., such as O, C, N, etc., mixing into the film lowers, and it becomes possible to form a thin film excellent in characteristics.
COPYRIGHT: (C)1989,JPO&Japio
JP15342488A 1988-06-23 1988-06-23 Thin film formation and device therefor Pending JPH01321625A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15342488A JPH01321625A (en) 1988-06-23 1988-06-23 Thin film formation and device therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15342488A JPH01321625A (en) 1988-06-23 1988-06-23 Thin film formation and device therefor

Publications (1)

Publication Number Publication Date
JPH01321625A true true JPH01321625A (en) 1989-12-27

Family

ID=15562206

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15342488A Pending JPH01321625A (en) 1988-06-23 1988-06-23 Thin film formation and device therefor

Country Status (1)

Country Link
JP (1) JPH01321625A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03246973A (en) * 1990-02-23 1991-11-05 Toshiba Corp Thin film transistor and its manufacture
EP0562035A1 (en) 1990-12-11 1993-09-29 Lam Research Corporation Minimization of particle generation in cvd reactors and methods
US5451259A (en) * 1994-02-17 1995-09-19 Krogh; Ole D. ECR plasma source for remote processing
US5453125A (en) * 1994-02-17 1995-09-26 Krogh; Ole D. ECR plasma source for gas abatement
WO1996013621A1 (en) * 1994-10-31 1996-05-09 Krogh Ole D An ecr plasma source
JP2012509831A (en) * 2008-11-25 2012-04-26 カーネギー インスチチューション オブ ワシントン Production of single crystal cvd diamond in the rapid growth rate
JP2014131036A (en) * 2007-08-17 2014-07-10 Semiconductor Energy Lab Co Ltd Deposition apparatus

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03246973A (en) * 1990-02-23 1991-11-05 Toshiba Corp Thin film transistor and its manufacture
EP0562035A1 (en) 1990-12-11 1993-09-29 Lam Research Corporation Minimization of particle generation in cvd reactors and methods
EP0562035B2 (en) 1990-12-11 2001-09-05 Lam Research Corporation Minimization of particle generation in cvd reactors and methods
US5451259A (en) * 1994-02-17 1995-09-19 Krogh; Ole D. ECR plasma source for remote processing
US5453125A (en) * 1994-02-17 1995-09-26 Krogh; Ole D. ECR plasma source for gas abatement
WO1996013621A1 (en) * 1994-10-31 1996-05-09 Krogh Ole D An ecr plasma source
JP2014131036A (en) * 2007-08-17 2014-07-10 Semiconductor Energy Lab Co Ltd Deposition apparatus
JP2016076715A (en) * 2007-08-17 2016-05-12 株式会社半導体エネルギー研究所 Method of manufacturing display device
JP2012509831A (en) * 2008-11-25 2012-04-26 カーネギー インスチチューション オブ ワシントン Production of single crystal cvd diamond in the rapid growth rate

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