CN217499494U - Two-dimensional material growth equipment - Google Patents
Two-dimensional material growth equipment Download PDFInfo
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- CN217499494U CN217499494U CN202220677700.4U CN202220677700U CN217499494U CN 217499494 U CN217499494 U CN 217499494U CN 202220677700 U CN202220677700 U CN 202220677700U CN 217499494 U CN217499494 U CN 217499494U
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Abstract
The utility model discloses a two-dimensional material growth equipment, including the growth cavity, the sample platform, a plurality of precursor subassemblies, the growth cavity outside is equipped with heating device, the growth cavity is connected with the outlet duct, the precursor subassembly includes the precursor lumen, the intake pipe, the precursor lumen outside is equipped with precursor heating device, precursor lumen and growth cavity, the intake pipe links to each other, the quartz boat has been placed in the precursor lumen, the precursor that the quartz boat loaded in each precursor subassembly is different, the sample platform sets up in the growth cavity and along the inside axial displacement of growth cavity, heater and growth substrate are installed to the sample platform, the heater is used for adjusting the difference in temperature between growth substrate and the growth cavity. The utility model has the advantages of prevent that each precursor from reacting before reacing the substrate, can adjust the temperature of growth substrate and then regulate and control the super-cooled rate between precursor and the growth substrate alone according to the demand, the distance that the precursor reachd the substrate is adjustable to guarantee that the precursor has suitable gas phase reaction time.
Description
Technical Field
The utility model belongs to the technical field of the two-dimensional material grows, especially, relate to a two-dimensional material growth equipment.
Background
The discovery of graphene opens the door of two-dimensional materials, and the ultrahigh carrier mobility and other electrical properties of graphene are considered as powerful competitors of semiconductor channel materials in the future. However, the band gap width of graphene itself is small, and it is difficult to achieve effective turn-off. The presence of transition metal sulfides solves this problem. The transition metal sulfide is a layered structure formed by transition metals (such as molybdenum, tungsten, iron, nickel and the like) and chalcogens (such as sulfur, selenium, tellurium and the like), has abundant band gap widths and proper electrical properties, and has application values in multiple fields of semiconductor channels, photoelectric detection, flexible wearing and the like. Due to the natural layered structure of the two-dimensional material and the fact that the surface is not affected by dangling bonds, van der Waals force contact of heterogeneous stacking can be achieved, so that a steep transition boundary is obtained, the problems of boundary diffusion, chemical bonding and the like of a traditional material heterogeneous structure are solved, and the application prospect of the two-dimensional material is greatly enriched.
At present, molecular beam epitaxy is commonly used in equipment for growing heterojunction, although flexible control of each precursor can be realized, the requirements of growth environment are strict, and the crystal size is limited. The sputtering method can obtain large-area film materials, but the crystal size is small, the layer number is uncontrollable, and the growth of a single crystal layer surface is difficult to obtain. The tube furnace has the advantages of wide application, simple structure and capability of conveniently obtaining the monocrystal two-dimensional material or film with larger size.
Chinese patent publication No. CN108707875A, entitled a joint for tube-type CVD furnace, two-dimensional material, and growing apparatus and method thereof, specifically discloses a tube-type CVD furnace having a plurality of evaporation source heating chambers on a main body, the main body connected to the tube-type CVD furnace, the tube-type CVD furnace including a quartz tube with openings at both ends, a CVD heating chamber, and a heat-insulating housing, the quartz tube with openings at both ends being used for placing a substrate for preparing the two-dimensional material. The patent scheme has the following defects: the temperature of the substrate cannot be controlled independently, so that the temperature difference between the substrate and the quartz tube is difficult to adjust, and if the growth parameters are not reached, the substrate is placed at the growth position of the growth cavity to form three-dimensional impurities on the surface of the two-dimensional material easily; when the tube furnace is applied to heterojunction growth, the problems of mutual influence of precursors and difficulty in control of heating time are faced, for example, different precursors are mixed and react before entering a quartz tube, so that impurities are generated in the subsequent two-dimensional material growth; s impurities can be generated on the surface of the two-dimensional material if a sulfur precursor is added too early when the two-dimensional material of molybdenum disulfide grows; when the substrate and the precursor are respectively placed in different heating cavities, the distance between the substrate and the precursor cannot be adjusted.
SUMMERY OF THE UTILITY MODEL
The utility model aims at solving the problem in the background art, provide a two-dimensional material heterojunction growth equipment, can prevent that each precursor from reacting before reacing the substrate, can adjust the temperature of growth substrate alone and then regulate and control the super-cooled rate between precursor and the growth substrate according to the demand, the distance that the precursor reachd the substrate is adjustable to guarantee that the precursor has suitable gas phase reaction time.
For realizing the above-mentioned purpose, the utility model provides a two-dimensional material growth equipment, including growth cavity, sample platform, a plurality of precursor subassembly, the growth cavity outside is equipped with heating device, and growth cavity is connected with the outlet duct, and the precursor subassembly includes precursor lumen, intake pipe, and the precursor lumen outside is equipped with precursor heating device, and the precursor lumen links to each other with growth cavity, intake pipe, has placed the quartz boat in the precursor lumen, and the precursor that the quartz boat loaded is different in each precursor subassembly, the sample platform sets up in the growth cavity and along the inside axial displacement of growth cavity, and heater and growth substrate are installed to the sample platform, and the heater is used for adjusting the temperature difference between growth substrate and the growth cavity.
Preferably, one end of the growth cavity is provided with a first sealing flange, the middle part of the first sealing flange is provided with a sample rod in a matching mode, the sample rod moves axially along the first sealing flange, one end of the sample rod extends into the growth cavity and is connected with the sample table, and one end of the air outlet pipe penetrates through the first sealing flange and is communicated with the growth cavity.
Preferably, the number of the precursor assemblies is 3, the precursor assemblies are respectively a first precursor assembly, a second precursor assembly and a third precursor assembly, the first precursor assembly, the second precursor assembly and the third precursor assembly are arranged side by side, and precursors filled in quartz boats in the first precursor assembly, the second precursor assembly and the third precursor assembly are respectively sulfur powder, molybdenum oxide powder and tungsten oxide powder.
Preferably, the gas inlet pipes on the first precursor assembly, the second precursor assembly and the third precursor assembly are respectively connected with a protective gas source or a carbon-containing gas source.
Preferably, the shielding gas provided by the shielding gas source comprises high purity argon, and the carbon-containing gas provided by the carbon-containing gas source comprises methane.
Preferably, a second sealing flange is installed at one end, far away from the growth cavity, of each precursor tube cavity, one end of the air inlet tube penetrates through the second sealing flange to be communicated with the precursor tube cavity, and the air inlet tube is provided with an air inlet valve.
Preferably, the intake pipe is provided with a flow meter.
Preferably, the air outlet pipe is provided with a barometer and is connected with the vacuum unit.
Preferably, the gas outlet pipe is provided with a three-way valve, the three-way valve is positioned between the barometer and the vacuum unit, and the three-way valve is connected with the tail gas treatment device.
Preferably, the growth cavity is provided with a low temperature region and a high temperature region, and the high temperature region is an internal region of the growth cavity of the relative heating device.
The utility model has the advantages that: the utility model discloses a be connected a plurality of precursor subassemblies and growth cavity alone, each precursor subassembly all is equipped with precursor heating device, prevents that each precursor from taking place to mix and react and then reduce the production of two-dimensional material growth in-process impurity before getting into the growth cavity, and the heating condition of each precursor, add the time etc. homoenergetic independent control, can obtain single type two-dimensional material or two-dimensional heterojunction; the heater is arranged on the sample stage, so that the temperature of the growth substrate can be independently adjusted according to the growth requirement of the two-dimensional material, the supercooling degree between the precursor and the growth substrate can be regulated, the growth substrate can reach the required growth temperature when reaching the growth position, and the generation of impurities in the growth process of the two-dimensional material is reduced; the sample stage is arranged in the growth cavity and moves axially along the interior of the growth cavity, so that the distance from the precursor to the substrate can be adjusted to ensure that the precursor has proper gas-phase reaction time
The features and advantages of the present invention will be described in detail by embodiments with reference to the accompanying drawings.
Drawings
Fig. 1 is a schematic structural diagram of an embodiment of the present invention.
Fig. 2 is a top view of an embodiment of the present invention.
In the figure: 1-growth cavity, 2-sample table, 3-precursor assembly, 4-heat preservation furnace body, 5-gas outlet pipe, 11-first sealing flange, 21-sample rod, 31-precursor tube cavity, 32-quartz boat, 33-precursor heating device, 34-flowmeter, 35-gas inlet valve, 36-second sealing flange, 41-heating device, 51-barometer, 52-vacuum unit, 53-three-way valve, 54-tail gas treatment device.
Detailed Description
Referring to fig. 1 and fig. 2, the embodiment provides a two-dimensional material growth apparatus, which includes a growth chamber 1, a sample stage 2, and a plurality of precursor assemblies 3 arranged side by side, wherein the growth chamber 1 is installed in a heat-insulating furnace 4, heating devices 41 are arranged at the bottom and outside of the growth chamber 1, an air outlet pipe 5 is connected to the top of the growth chamber 1, the precursor assemblies 3 include a precursor pipe cavity 31 and an air inlet pipe, a precursor heating device 33 is arranged at the outside of the portion of the precursor pipe cavity 31 extending into the heat-insulating furnace 4, the precursor pipe cavity 31 is connected with the growth chamber 1 and the air inlet pipe, quartz boats 32 are arranged in the precursor pipe cavity 31, the precursors loaded in the quartz boats 32 in each precursor assembly 3 are different, the sample stage 2 is arranged in the growth chamber 1 and moves axially along the inside of the growth chamber 1, a heater and a growth substrate are installed on the sample stage 4, the heater is used for adjusting the temperature difference between the growth substrate and the growth chamber 1, the growth cavity 1 and the precursor cavity 31 are both formed by quartz tubes, the supercooling degree is the temperature difference between the growth substrate and the growth cavity 1, the heater, the precursor heating device 33 and the heating device 41 are all connected with the controller to realize automatic control, the heating temperature and time of the precursor are controlled by the precursor heating device 33, the heating process of the growth cavity 1 is controlled by the heating device 41, the heating temperature of the growth substrate is controlled by the heater, when the temperature of the growth substrate is higher than that of the growth cavity 1, the surface reaction of a sample is improved, the growth speed is reduced, and the probability of generating impurities is favorably reduced; the temperature of the growth substrate is lower than that of the growth cavity 1, the deposition speed of the surface of the sample is increased, the growth speed is increased, and the probability of generation of impurities and polycrystal is increased.
The upper end of growth cavity 1 is equipped with first sealing flange 11, sample pole 21 is installed in the cooperation of first sealing flange 11 middle part, sample pole 21 is along 11 axial displacement of first sealing flange, the one end of sample pole 21 stretches into in growth cavity 1 and links to each other with sample platform 2, the one end of outlet duct 5 is passed first sealing flange 11 and is linked together with growth cavity 1, realize sample platform 2 along 1 inside reciprocating of growth cavity through carrying and drawing sample pole 21, and then adjust the distance between growth substrate and the export of precursor lumen 31, change the distance that the precursor reachs the growth substrate, adjust the pre-reaction time of different precursors, the gas tightness of growth cavity 1 is guaranteed to first sealing flange 11.
The number of the precursor assemblies 3 is 3, the first precursor assemblies, the second precursor assemblies and the third precursor assemblies are sequentially arranged from front to back, the first precursor assemblies, the second precursor assemblies and the third precursor assemblies are connected with the side face of the lower end of the growth cavity 1 side by side, the precursors loaded in quartz boats 31 in the first precursor assemblies, the second precursor assemblies and the third precursor assemblies are sulfur powder, molybdenum oxide powder and tungsten oxide powder respectively, the precursors are not mixed before entering the growth cavity 1, the heating condition, the adding time and the like of the precursors can be independently controlled, the number of growing layers of the two-dimensional material can be conveniently controlled, and the heterogeneous junction formed by molybdenum disulfide and tungsten disulfide, molybdenum disulfide and graphene two-dimensional materials and the single two-dimensional material molybdenum disulfide can be obtained according to different growing modes.
And gas inlet pipes on the first precursor assembly, the second precursor assembly and the third precursor assembly are respectively connected with a protective gas source or a carbon-containing gas source, and the two-dimensional material (such as graphene) grown by the gaseous source can be obtained by introducing the carbon-containing gas source.
The protective gas provided by the protective gas source comprises high-purity argon, the carbon-containing gas provided by the carbon-containing gas source comprises methane, and the high-purity argon can provide a good reaction environment for heterojunction growth.
The intake pipe is provided with a flow meter 34, and the flow meter 34 is used for detecting the flow of gas input into the intake pipe.
The end, far away from the growth cavity 1, of the precursor cavity 31 on each precursor assembly is provided with a second sealing flange 36, one end of the air inlet pipe penetrates through the second sealing flange 36 to be communicated with the precursor cavity 31, the air inlet pipe is provided with an air inlet valve 35, the air inlet valve 35 is located between the flowmeter 34 and the second sealing flange 36, the second sealing flange 36 is arranged to guarantee the air tightness of the precursor cavity 31, and the air inlet valve 35 is used for adjusting the air inlet flow.
The air outlet pipe 5 is provided with an air pressure gauge 51, the air outlet pipe 5 is connected with a vacuum unit 52, the air pressure gauge 51 detects the pressure value in the growth cavity 1 in real time, the pressure value in the growth cavity 1 can be adjusted to a preset value conveniently and accurately, and the vacuum unit 52 is used for sucking gas in the growth cavity 1 to reduce the pressure in the growth cavity 1.
The gas outlet pipe 5 is provided with a three-way valve 53, the three-way valve 53 is positioned between the barometer 51 and the vacuum unit 52, the three-way valve 53 is connected with a tail gas treatment device 54, and the tail gas treatment device 54 carries out harmless treatment on the discharged gas.
The growth chamber 1 is provided with a low temperature region and a high temperature region, and the high temperature region is an internal region of the growth chamber 1 opposite to the heating device 41.
The utility model discloses the working process:
in the working process of the two-dimensional material growth equipment, a heterojunction is formed according to the following five growth modes:
Opening the second sealing flange 36, correspondingly loading sulfur powder, molybdenum oxide powder and tungsten oxide powder into the quartz boat 32 on the first precursor assembly, the second precursor assembly and the third precursor assembly respectively, placing the quartz boat at the center of the precursor heating device 33, loading the second sealing flange 36 back, closing the air inlet valve 35, then opening the first sealing flange 21, mounting the growth substrate on the sample stage 2, closing the first sealing flange 21, adjusting the growth substrate to a preset position in the growth chamber 1 through the sample rod 21, turning the three-way valve 53 to be connected with the vacuum unit 52, opening the vacuum unit 52, reducing the pressure in the growth chamber 1 to a set value, closing the vacuum unit 52, opening the air inlet valves 35 of the first precursor assembly, the second precursor assembly and the third precursor assembly, introducing high-purity argon gas, observing that the pressure in the growth chamber 1 is raised to normal pressure through the barometer 5, transferring the three-way valve 53 to a tail gas treatment device 54 to realize normal-pressure exhaust, heating sulfur powder and molybdenum oxide powder to a proper temperature, bringing sublimed sulfur vapor and molybdenum oxide vapor into the growth cavity 1 by high-purity argon gas, reacting on the surface of the growth substrate to realize the growth of the first two-dimensional material molybdenum disulfide, stopping heating the molybdenum oxide powder after a set time, stopping subliming the molybdenum oxide powder, heating tungsten oxide powder to a set temperature, bringing the tungsten oxide powder into the growth cavity 1 by the high-purity argon gas, reacting with the sulfur powder on the surface of the growth substrate to realize the growth of the second two-dimensional material tungsten disulfide on the basis of the first two-dimensional material, after the growth is finished, cooling the temperature in the heat preservation furnace body 4 to room temperature, closing the three-way valve 53, closing the air inlet valves 35 of the first precursor component, the second precursor component and the third precursor component in sequence, opening the first sealing flange 11, and taking out the growth substrate to obtain the heterojunction formed by the first two-dimensional material molybdenum disulfide and the second two-dimensional material tungsten disulfide according to normal pressure growth.
Mode of growth 2
Opening the second sealing flange 36, correspondingly loading sulfur powder, molybdenum oxide powder and tungsten oxide powder into the quartz boat 32 on the first precursor assembly, the second precursor assembly and the third precursor assembly respectively, placing the quartz boat at the center of the precursor heating device 33, loading the second sealing flange 36 back, closing the air inlet valve 35, then opening the first sealing flange 21, installing the growth substrate on the sample stage 2, closing the first sealing flange 21, adjusting the growth substrate to a preset position in the growth cavity 1 through the sample rod 21, turning the three-way valve 53 to be connected with the vacuum unit 52, opening the vacuum unit 52, reducing the pressure in the cavity 1 to be grown to a set value, opening the air inlet valves 35 of the first precursor assembly, the second precursor assembly and the third precursor assembly, introducing high-purity argon gas, observing the pressure in the growth cavity 1 to the set value through the barometer 5, then heating the sulfur powder and the molybdenum oxide powder to a proper temperature, sublimed sulfur vapor and molybdenum oxide vapor are brought into the growth cavity 1 by high-purity argon and react on the surface of the growth substrate to realize the growth of the first two-dimensional material molybdenum disulfide, heating of molybdenum oxide powder is stopped after a set time, sublimation of the molybdenum oxide powder is stopped, tungsten oxide powder is heated to a set temperature, and is carried into the growth cavity 1 by high-purity argon gas and reacts with sulfur powder on the surface of the growth substrate, the growth of the tungsten disulfide of the second two-dimensional material is realized on the basis of the first two-dimensional material, after the growth is finished, and (3) after the temperature in the heat-preserving furnace body 4 is cooled to room temperature, closing the three-way valve 53, keeping the aeration to enable the growth cavity 1 to be in a normal pressure state, sequentially closing the air inlet valves 35 of the first precursor assembly, the second precursor assembly and the third precursor assembly, opening the first sealing flange 11, taking out the growth substrate, and obtaining the heterojunction formed by the first two-dimensional material molybdenum disulfide and the second two-dimensional material tungsten disulfide according to low-pressure growth.
Opening the second sealing flange 36, correspondingly loading sulfur powder, molybdenum oxide powder and tungsten oxide powder into the quartz boat 32 on the first precursor assembly, the second precursor assembly and the third precursor assembly respectively, placing the quartz boat at the center of the precursor heating device 33, loading the second sealing flange 36 back, closing the air inlet valve 35, then opening the first sealing flange 21, mounting the growth substrate on the sample stage 2, closing the first sealing flange 21, adjusting the growth substrate to a preset position in the growth chamber 1 through the sample rod 21, turning the three-way valve 53 to be connected with the vacuum unit 52, opening the vacuum unit 52, reducing the pressure in the growth chamber 1 to a set value, closing the vacuum unit 52, opening the air inlet valves 35 of the first precursor assembly, the second precursor assembly and the third precursor assembly, introducing high-purity argon gas, observing that the pressure in the growth chamber 1 is raised to normal pressure through the barometer 5, transferring the three-way valve 53 to a tail gas treatment device 54 to realize normal-pressure exhaust, heating sulfur powder and molybdenum oxide powder to a proper temperature, bringing sublimed sulfur vapor and molybdenum oxide vapor into the growth cavity 1 by high-purity argon gas, reacting on the surface of the growth substrate to realize the growth of the first two-dimensional material molybdenum disulfide, stopping heating the molybdenum oxide powder after a set time, stopping subliming the molybdenum oxide powder, heating tungsten oxide powder to a set temperature, bringing the tungsten oxide powder into the growth cavity 1 by the high-purity argon gas, reacting with the sulfur powder on the surface of the growth substrate to realize the growth of the second two-dimensional material tungsten disulfide on the basis of the first two-dimensional material, repeating the processes to a preset growth layer number, cooling the temperature in the heat preservation furnace body 4 to room temperature after the growth is finished, closing the three-way valve 53, and sequentially closing the air inlet valves 35 of the first precursor component, the second precursor component and the third precursor component, the first sealing flange 11 is opened, and the growth substrate is taken out, so that the heterojunction formed by the first two-dimensional material molybdenum disulfide and the second two-dimensional material tungsten disulfide with the predetermined layers is grown according to the normal pressure.
Opening the second sealing flange 36, correspondingly loading sulfur powder and molybdenum oxide powder into the quartz boat 32 on the first precursor assembly and the second precursor assembly respectively, placing the quartz boat at the center of the precursor heating device 33, loading the second sealing flange 36 back, closing the air inlet valve 35, then opening the first sealing flange 21, mounting the growth substrate on the sample stage 2, closing the first sealing flange 21, adjusting the growth substrate to a preset position in the growth cavity 1 through the sample rod 21, turning the three-way valve 53 to be connected with the vacuum unit 52, opening the vacuum unit 52 until the pressure in the growth cavity 1 is reduced to a preset value, closing the vacuum unit 52, opening the air inlet valves 35 of the first precursor assembly and the second precursor assembly, introducing high-purity argon, observing that the pressure in the growth cavity 1 is increased to normal pressure through the barometer 5, turning the three-way valve 53 to the tail gas treatment device 54 to realize normal-pressure exhaust, and then heating the sulfur powder and the molybdenum oxide powder to a proper temperature, carrying sublimed sulfur steam and molybdenum oxide steam into the growth cavity 1 by high-purity argon, reacting on the surface of the growth substrate to realize the growth of the two-dimensional material molybdenum disulfide, immediately closing the heater after a set time, lifting the sample rod 21 to ensure that the sample platform 2 is lifted to a low-temperature area to realize rapid cooling, closing the three-way valve 53, sequentially closing the precursor heating device 33 and the air inlet valve 35 of the first precursor component and the second precursor component, opening the first sealing flange 11, taking out the growth substrate, and obtaining the two-dimensional material molybdenum disulfide with growth interruption.
Opening the second sealing flange 36, correspondingly loading sulfur powder and molybdenum oxide powder into the quartz boat 32 on the first precursor assembly and the second precursor assembly respectively, placing the quartz boat at the center of the precursor heating device 33, loading the second sealing flange 36 back, closing the air inlet valve 35, then opening the first sealing flange 21, mounting the growth substrate on the sample stage 2, closing the first sealing flange 21, adjusting the growth substrate to a preset position in the growth cavity 1 through the sample rod 21, turning the three-way valve 53 to be connected with the vacuum unit 52, opening the vacuum unit 52 until the pressure in the growth cavity 1 is reduced to a preset value, closing the vacuum unit 52, opening the air inlet valves 35 of the first precursor assembly and the second precursor assembly, introducing high-purity argon, observing that the pressure in the growth cavity 1 is increased to normal pressure through the barometer 5, turning the three-way valve 53 to the tail gas treatment device 54 to realize normal-pressure exhaust, then heating the sulfur powder and the molybdenum oxide powder to a proper temperature, leading sublimed sulfur vapor and molybdenum oxide vapor to be carried into the growth cavity 1 by high-purity argon, and reacts on the surface of the growth substrate to realize the growth of the two-dimensional material molybdenum disulfide, the precursor heating device 33 and the air inlet valve 35 of the first precursor assembly and the second precursor assembly are closed after the set time, the air inlet valve 35 of the third precursor assembly is opened, methane is introduced, the temperature of the growth cavity 1 and the temperature of the sample stage 2 are adjusted to the set value, and (3) realizing the growth of the gas-state source two-dimensional material graphene on the surface of the growth substrate, after the growth is finished, closing the three-way valve 53, closing the precursor heating device 33 and the air inlet valve 35 of the third precursor assembly, opening the first sealing flange 11, and taking out the growth substrate to obtain the heterojunction formed by the two-dimensional material molybdenum disulfide grown by the solid-state source and the two-dimensional material graphene grown by the gas-state source.
The above-mentioned embodiment is right the utility model discloses an explanation, it is not right the utility model discloses a limited, any right the scheme after the simple transform of the utility model all belongs to the protection scope of the utility model.
Claims (10)
1. The utility model provides a two-dimensional material growth equipment, includes the growth cavity, and the growth cavity outside is equipped with heating device, and the growth cavity is connected with outlet duct, its characterized in that: the quartz boat growth device is characterized by further comprising a sample table and a plurality of precursor assemblies, wherein each precursor assembly comprises a precursor cavity and an air inlet pipe, a precursor heating device is arranged on the outer side of each precursor cavity, each precursor cavity is connected with the growth cavity and the air inlet pipe, quartz boats are placed in the precursor cavities, the precursors loaded by the quartz boats in the precursor assemblies are different, the sample table is arranged in the growth cavities and moves axially along the inner portions of the growth cavities, a heater and a growth substrate are mounted on the sample table, and the heater is used for adjusting the temperature difference between the growth substrate and the growth cavities.
2. The two-dimensional material growth apparatus of claim 1, wherein: one end of the growth cavity is provided with a first sealing flange, the middle part of the first sealing flange is provided with a sample rod in a matching mode, the sample rod moves along the axial direction of the first sealing flange, one end of the sample rod extends into the growth cavity and is connected with a sample platform, and one end of the air outlet pipe penetrates through the first sealing flange to be communicated with the growth cavity.
3. The two-dimensional material growth apparatus of claim 1, wherein: the number of the precursor assemblies is 3, the precursor assemblies are respectively a first precursor assembly, a second precursor assembly and a third precursor assembly, the first precursor assembly, the second precursor assembly and the third precursor assembly are arranged side by side, and precursors filled in quartz boats in the first precursor assembly, the second precursor assembly and the third precursor assembly are respectively sulfur powder, molybdenum oxide powder and tungsten oxide powder.
4. A two-dimensional material growth apparatus according to claim 3, wherein: and the gas inlet pipes on the first precursor assembly, the second precursor assembly and the third precursor assembly are respectively connected with a protective gas source or a carbon-containing gas source.
5. The two-dimensional material growth apparatus of claim 4, wherein: the protective gas provided by the protective gas source comprises high-purity argon, and the carbon-containing gas provided by the carbon-containing gas source comprises methane.
6. The two-dimensional material growth apparatus of claim 1, wherein: and one end of each precursor tube cavity, which is far away from the growth cavity, is provided with a second sealing flange, one end of the air inlet pipe penetrates through the second sealing flange to be communicated with the precursor tube cavity, and the air inlet pipe is provided with an air inlet valve.
7. The two-dimensional material growth apparatus of claim 1, wherein: the air inlet pipe is provided with a flowmeter.
8. The two-dimensional material growth apparatus of claim 1, wherein: the air outlet pipe is provided with a barometer and is connected with the vacuum unit.
9. The two-dimensional material growth apparatus of claim 8, wherein: the gas outlet pipe is provided with a three-way valve, the three-way valve is positioned between the barometer and the vacuum unit, and the three-way valve is connected with the tail gas treatment device.
10. A two-dimensional material growth apparatus according to any of claims 1 to 9, wherein: the growth cavity is provided with a low-temperature area and a high-temperature area, and the high-temperature area is an internal area of the growth cavity of the relative heating device.
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| CN202220677700.4U CN217499494U (en) | 2022-03-24 | 2022-03-24 | Two-dimensional material growth equipment |
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| CN202220677700.4U CN217499494U (en) | 2022-03-24 | 2022-03-24 | Two-dimensional material growth equipment |
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