CN211103391U - Chemical mechanical polishing ring - Google Patents
Chemical mechanical polishing ring Download PDFInfo
- Publication number
- CN211103391U CN211103391U CN201921815232.7U CN201921815232U CN211103391U CN 211103391 U CN211103391 U CN 211103391U CN 201921815232 U CN201921815232 U CN 201921815232U CN 211103391 U CN211103391 U CN 211103391U
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- opening
- chemical mechanical
- groove
- mechanical polishing
- annular
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- 239000000126 substance Substances 0.000 title claims abstract description 32
- 238000005498 polishing Methods 0.000 title claims description 42
- 239000004734 Polyphenylene sulfide Substances 0.000 abstract description 5
- 229920000069 polyphenylene sulfide Polymers 0.000 abstract description 5
- 239000000463 material Substances 0.000 abstract description 4
- 239000004033 plastic Substances 0.000 abstract description 2
- 229920003023 plastic Polymers 0.000 abstract description 2
- 229910001220 stainless steel Inorganic materials 0.000 abstract description 2
- 239000010935 stainless steel Substances 0.000 abstract description 2
- 239000002002 slurry Substances 0.000 description 8
- 230000007547 defect Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 238000006748 scratching Methods 0.000 description 2
- 230000002393 scratching effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- RKLSGKOUKYOIRM-UHFFFAOYSA-N butylboron Chemical compound [B]CCCC RKLSGKOUKYOIRM-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
Images
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The utility model discloses a chemical machinery grinding ring. The utility model provides a chemical machinery grinding ring contains first annular portion and second annular portion, and the material of first annular portion can be the stainless steel, and the material of second annular portion can be high-order plastics, for example PPS (polyphenylene sulfide). The second annular portion comprises an inner annular surface, an outer annular surface and a lower surface, wherein the lower surface is located between the inner annular surface and the outer annular surface. The second annular portion still contains a plurality of escape canal grooves, and each escape canal groove has interior opening, outer opening, under shed and tank bottom surface, and interior opening is located the interior ring surface, and outer opening is located outer ring surface, and the under shed is located the lower surface, and the tank bottom surface is for the under shed, and wherein the width of each escape canal groove's cross-section is gradually expanded from the under shed towards the tank bottom surface.
Description
Technical Field
The utility model relates to a be applied to chemical mechanical polishing ring that semiconductor wafer ground.
Background
In a semiconductor manufacturing process, Chemical-Mechanical Planarization (CMP) is an indispensable process, and if a wafer is not polished to a good plane or scratched during CMP, errors may occur in subsequent photolithography processes such as exposure, development, and etching, and even irrecoverable defects may be caused.
Chemical mechanical polishing is generally performed by a chemical mechanical polishing apparatus, wherein the chemical mechanical polishing apparatus can generally drive more than one set of chemical mechanical polishing rings to rotate. The wafer is fixed in the CMP ring, the lower surface of the wafer faces the polishing pad, and the CMP slurry is circulated to the polishing pad through the CMP ring, so that when the CMP ring rotates, the wafer is driven to rotate, and the lower surface of the wafer rotates relative to the surface of the polishing pad to be polished.
During CMP, the wafer is positioned below the CMP ring and confined in the CMP ring, and the CMP slurry is continuously injected into the CMP ring from above at a predetermined flow rate. In order to make the chemical mechanical polishing liquid injected into the chemical mechanical polishing ring flow out of the chemical mechanical polishing ring smoothly after polishing the wafer, the lower surface of the chemical mechanical polishing ring is provided with a plurality of grooves. When the CMP ring contacts with the polishing pad, the grooves form water drainage channels on the contact surface, so that the CMP slurry mixed with wafer dust can flow out through the water drainage channels during rotation, and the CMP slurry in the ring can be kept in a clean state continuously.
However, the lower surface of the cmp ring is in direct contact with the polishing pad and is continuously rubbed during the polishing process, so that the lower surface of the cmp ring is continuously worn away, and the grooves are shallower. Once the grooves become shallow, the efficiency of cmp slurry removal becomes poor, and the cmp ring must be replaced.
SUMMERY OF THE UTILITY MODEL
In view of this, the present invention provides a chemical mechanical polishing ring. The utility model provides a chemical machinery grinding ring contains first annular portion and second annular portion. The second annular portion comprises an inner annular surface, an outer annular surface and a lower surface, wherein the lower surface is located between the inner annular surface and the outer annular surface. The second annular portion still contains a plurality of escape canal grooves, and each escape canal groove has interior opening, outer opening, under shed and tank bottom surface, and interior opening is located the interior ring surface, and outer opening is located outer ring surface, and the under shed is located the lower surface, and the tank bottom surface is for the under shed, and wherein the width of each escape canal groove's cross-section is gradually expanded from the under shed towards the tank bottom surface.
The utility model discloses an in the embodiment, above-mentioned chemical machinery grinding ring's each drainage ditch groove's cross-section is trapezoidal.
In an embodiment of the present invention, each drainage groove has two side wall surfaces respectively located at two sides of the groove bottom surface, and the side wall surfaces are arc-shaped.
In an embodiment of the present invention, the cross section of each drainage groove gradually expands from the inner opening to the outer opening.
In an embodiment of the present invention, the cross section of each drainage groove includes a first portion and a second portion, the first portion is from one-half of the depth of the drainage groove to the lower opening, the second portion is from one-half of the depth of the drainage groove to the bottom surface of the drainage groove, and the area ratio of the first portion to the second portion is less than 0.8.
In an embodiment of the present invention, the cross section of each drainage groove includes a first portion and a second portion, the first portion is from one-half of the depth of the drainage groove to the lower opening, the second portion is from one-half of the depth of the drainage groove to the bottom surface of the drainage groove, wherein the area ratio of the first portion to the second portion is in the range of 0.5 to 0.7.
Drawings
Fig. 1 is a schematic perspective view of an embodiment of a chemical mechanical polishing ring according to the present invention.
Fig. 2 is a partially enlarged view of the region S1 of fig. 1.
Figure 3 is a schematic cross-sectional view of the drain channel along line AA of figure 2.
Fig. 4 is a schematic cross-sectional view of another embodiment of the drainage groove of the cmp ring of the present invention.
Fig. 5 is a schematic cross-sectional view of another embodiment of the cmp ring of the present invention.
Wherein, the reference numbers:
1 chemical mechanical polishing Ring 11 first Ring segment
12 second annular portion 121 inner annular surface
122 outer annular surface 123 lower surface
124 drain channel 124A open therein
124B outer opening 124C lower opening
W cross-sectional width of drainage channel h depth of drainage channel
A1 first part of the cross-section of the drainage channel
A2 second part of the cross-section of the drainage channel
S1 local area
Detailed Description
Referring to fig. 1 to 2, a perspective view of an embodiment of the present invention and a partial enlarged view of an area S1 of fig. 1 are respectively shown, illustrating a chemical mechanical polishing ring 1. The chemical mechanical polishing ring 1 mainly includes a first annular portion 11 and a second annular portion 12, the first annular portion 11 is made of stainless steel, and the second annular portion 12 is made of high-order plastic, such as PPS (polyphenylene sulfide). When the chemical mechanical polishing ring 1 is in operation, the second annular portion 12 faces the polishing pad and the wafer is fixed on the inner annular surface 121 of the second annular portion 12. It should be noted that the first annular portion 11 and the second annular portion 12 of the cmp ring 1 may be integrally formed and made of a single material, for example, the entirety is made of PPS or PBN (Poly butyl boron nitride).
The second annular portion 12 includes an inner annular surface 121, an outer annular surface 122, and a lower surface 123, wherein the lower surface 123 is located between the inner annular surface 121 and the outer annular surface 122. The second annular portion 12 contains a plurality of drain grooves 124. As shown in fig. 2, each drain groove 124 has an inner opening 124A, an outer opening 124B, a lower opening 124C, and a groove bottom 124D, the inner opening 124A being located on the inner annular surface 121, the outer opening 124B being located on the outer annular surface 122, the lower opening 124C being located on the lower surface 123, and the groove bottom 124D being opposite to the lower opening 124C. As shown in fig. 3, the width W of the cross section of each drainage groove 124 of the cmp ring 1 of the present embodiment is gradually increased from the lower opening 124C toward the groove bottom surface 124D, compared to the conventional cmp ring in which the width of the cross section of the drainage groove is uniform. Thus, when the CMP ring 1 is abraded in the vertical direction by repeated polishing to reduce the height of the drain groove 124 by half, the drainage capacity of the drain groove 124 can still be maintained over 50% in the new state. When the height of the drain groove 124 of the conventional cmp ring is reduced by half, the drainage capacity will be only half of that of the new state. Therefore, the chemical mechanical polishing ring 1 of the present invention can maintain the water discharge capability better than the prior chemical mechanical polishing ring under the same use condition, i.e. has a longer service life.
As shown in fig. 3, each drainage groove 124 of the present embodiment has a trapezoidal cross section and is divided into a first portion a1 and a second portion a2, wherein the first portion a1 extends from a half of the depth h of the drainage groove 124 to the lower opening 124C, and the second portion a2 extends from a half of the depth h of the drainage groove 124 to the groove bottom 124D of the drainage groove 124. Theoretically, the area ratio of the first portion a1 to the second portion a2 can have the effect intended by the present invention as long as it is lower than 1, but experiments show that the area ratio of the first portion a1 to the second portion a2 is lower than 0.8, and obviously appears on the engineering statistics result presented by the experimental result that the defect rate of the wafer can be reduced under the same thickness loss as that of the conventional chemical mechanical polishing ring. Experiments also show that when the area ratio of the first portion a1 to the second portion a2 is less than 0.5, even if a bevel is applied along the periphery of the lower opening 124C due to the thinner material of the periphery of the lower opening 124C, the periphery of the lower opening 124C is still found to have a corner break during the polishing process, and the chipping caused by the corner break may cause a larger scratch defect on the wafer surface undergoing chemical mechanical polishing. Therefore, the area ratio of the first portion a1 and the second portion a2 can be preferably designed to be less than 0.8, for example, in the range of 0.5 to 0.7, in consideration of the drainage effect and the avoidance of the corner collapse of the lower opening 124C of the drainage groove 124. In addition, when the area ratio of the first portion a1 to the second portion a2 is less than 0.5, another problem may occur in that the groove sidewall surface 124E of the drainage groove 124 is inclined more toward the lower surface 123 of the second annular portion 12, so that the cmp ring 1 will easily scratch the polishing pad when rotating relative to the polishing pad, and the debris generated from scratching the polishing pad may also scratch the wafer undergoing cmp.
Referring to fig. 4, which is a schematic cross-sectional view of another embodiment of the drainage groove 124 of the chemical mechanical polishing ring 1 of the present invention, the cross-section of the embodiment is not limited to be trapezoidal, that is, the side wall surfaces 124E on both sides of the bottom surface 124D of the drainage groove 124 can also be arc-shaped, so as to increase the included angle at the junction between the bottom surface 124D and the side wall surfaces 124E, and further reduce the accumulation of polishing slurry and dusts at the junction between the bottom surface 124D and the side wall surfaces 124E. As slurry and dust are deposited on the boundary between the bottom surface 124D and the sidewall surface 124E, a solid is formed, which may damage the wafer being chemically and mechanically polished if the solid falls off.
In one embodiment, the cross section of the drainage groove 124 of the cmp ring 1 may also gradually increase from the inner opening 124A to the outer opening 124B, thereby allowing the old cmp slurry in the cmp ring 1 to be more easily discharged out of the cmp ring 1 during the rotation process.
Referring to fig. 5, in some embodiments, a chamfer may be formed on the periphery of the lower opening 124C to further reduce the risk of scratching the polishing pad when the cmp ring 1 rotates relative to the polishing pad. In addition, rounded corners may be formed at the junctions of the bottom surfaces 124D and the side wall surfaces 124E to further reduce the probability of powder accumulation at the junctions of the bottom surfaces 124D and the side wall surfaces 124E.
Although the present invention has been described with reference to the preferred embodiments, it is to be understood that the invention is not limited thereto, and that various changes and modifications can be made without departing from the spirit of the invention.
Claims (6)
1. A chemical mechanical polishing ring, comprising:
a first annular portion; and
the second annular part is arranged below the first annular part and comprises an inner annular surface, an outer annular surface and a lower surface, and the lower surface is positioned between the inner annular surface and the outer annular surface; this second annular portion still contains a plurality of escape canal grooves, and each this escape canal groove has an interior opening, an outer opening, an opening and a tank bottom surface, and this interior opening is located this interior anchor ring, and this outer opening is located this outer anchor ring, and this lower opening is located this lower surface, and this tank bottom surface is for this lower opening, and wherein the width in the cross-section of each this escape canal groove is gradually expanded from this lower opening towards this tank bottom surface.
2. A chemical mechanical polishing ring according to claim 1, wherein each of the drainage grooves has a trapezoidal cross section.
3. The chemical mechanical polishing ring according to claim 1, wherein each of the drain grooves has two side wall surfaces respectively located at two sides of the bottom surface of the groove, and the side wall surfaces are arc-shaped.
4. The chemical mechanical polishing ring according to claim 1, wherein each of the drainage grooves has a cross section that is gradually enlarged from the inner opening toward the outer opening.
5. The chemical mechanical polishing ring of claim 1, wherein each of the drainage grooves has a cross section comprising a first portion extending from one-half of the depth of the drainage groove to the lower opening and a second portion extending from one-half of the depth of the drainage groove to the bottom surface of the drainage groove, wherein the area ratio of the first portion to the second portion is less than 0.8.
6. The chemical mechanical polishing ring according to claim 1, wherein each of the drainage grooves has a cross section including a first portion extending from a half of the depth of the drainage groove to the lower opening and a second portion extending from a half of the depth of the drainage groove to the groove bottom surface, wherein an area ratio of the first portion to the second portion is in a range of 0.5 to 0.7.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW108204808U TWM582230U (en) | 2019-04-18 | 2019-04-18 | Chemical mechanical polishing ring |
| TW108204808 | 2019-04-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN211103391U true CN211103391U (en) | 2020-07-28 |
Family
ID=68317701
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201921815232.7U Active CN211103391U (en) | 2019-04-18 | 2019-10-25 | Chemical mechanical polishing ring |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN211103391U (en) |
| TW (1) | TWM582230U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115816267A (en) * | 2022-12-29 | 2023-03-21 | 西安奕斯伟材料科技有限公司 | Bearing piece of silicon wafer double-side polishing device and silicon wafer double-side polishing device |
-
2019
- 2019-04-18 TW TW108204808U patent/TWM582230U/en unknown
- 2019-10-25 CN CN201921815232.7U patent/CN211103391U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115816267A (en) * | 2022-12-29 | 2023-03-21 | 西安奕斯伟材料科技有限公司 | Bearing piece of silicon wafer double-side polishing device and silicon wafer double-side polishing device |
Also Published As
| Publication number | Publication date |
|---|---|
| TWM582230U (en) | 2019-08-11 |
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| GR01 | Patent grant |