CN109420969B - Grinding head and chemical mechanical grinding device - Google Patents

Grinding head and chemical mechanical grinding device Download PDF

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Publication number
CN109420969B
CN109420969B CN201710758008.8A CN201710758008A CN109420969B CN 109420969 B CN109420969 B CN 109420969B CN 201710758008 A CN201710758008 A CN 201710758008A CN 109420969 B CN109420969 B CN 109420969B
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China
Prior art keywords
grinding
wafer
polishing
chemical mechanical
polishing head
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CN201710758008.8A
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Chinese (zh)
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CN109420969A (en
Inventor
唐强
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Semiconductor Manufacturing International Shanghai Corp
Semiconductor Manufacturing International Beijing Corp
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Semiconductor Manufacturing International Shanghai Corp
Semiconductor Manufacturing International Beijing Corp
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Priority to CN201710758008.8A priority Critical patent/CN109420969B/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • B24B37/105—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
    • B24B37/107—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement in a rotary movement only, about an axis being stationary during lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/34—Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00—Component parts such as frames, beds, carriages, headstocks
    • B24B41/04—Headstocks; Working-spindles; Features relating thereto
    • B24B41/047—Grinding heads for working on plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

The invention provides a grinding head and a chemical mechanical grinding device. According to the grinding head and the chemical mechanical grinding device, stress concentration generated when the limiting ring is in contact with the grinding pad in the chemical mechanical grinding process is effectively improved, and scraping damage of the limiting ring to the grinding pad is reduced, so that the chemical mechanical grinding quality of a semiconductor wafer is improved, the yield of products is effectively improved, and meanwhile, the production cost is also reduced.

Description

Grinding head and chemical mechanical grinding device
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a grinding head and a chemical mechanical grinding device.
Background
As feature sizes shrink and metal interconnects increase during the fabrication of integrated circuits, the requirements for flatness of the wafer surface also increase. Chemical Mechanical Polishing (CMP) is a technique combining mechanical polishing and chemical etching, and is currently the most effective method for wafer planarization. The chemical mechanical polishing adopts a rotary polishing head to clamp a wafer, the wafer is pressed on a rotary polishing pad under certain pressure, and the surface of the wafer is flattened under the combined action of chemistry and machinery through the action of polishing slurry.
Generally, a polishing apparatus used in the semiconductor field includes a polishing pad and a polishing head disposed on the polishing pad. When the wafer is subjected to chemical mechanical polishing, the polishing head adsorbs the wafer to be polished to enable the surface to be polished of the wafer to be polished to be contacted with the polishing pad, the wafer to be polished rotates relative to the polishing pad under the drive of the polishing head, and the wafer is polished under the action of the polishing liquid. However, in the conventional polishing head, the wafer to be polished is usually fixed by the limit ring, and the limit ring scratches the polishing pad to different degrees in the contact process between the limit ring and the polishing pad, so that the polishing pad damages the wafer in the subsequent chemical mechanical polishing process, which results in a reduction in the yield of the product.
Therefore, the invention provides a novel grinding head and a chemical mechanical grinding device, which are used for solving the problems in the prior art.
Disclosure of Invention
In this summary, concepts in a simplified form are introduced that are further described in the detailed description. This summary of the invention is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used as an aid in determining the scope of the claimed subject matter.
The invention provides a grinding head which comprises a limiting ring, wherein the surface of the limiting ring, which is contacted with a grinding pad, is a curved surface.
Illustratively, the curved surface is an arc-shaped curved surface, and the arc-shaped curved surface is concave towards the direction of the polishing pad.
Illustratively, the height of the circular arc-shaped curved surface ranges from 0.85mm to 1.05 mm.
Illustratively, the inner diameter of the limiting ring is 0.1mm-0.2mm larger than the diameter of the wafer to be ground.
Exemplarily, a diversion trench is arranged at the bottom of the limiting ring.
Illustratively, the guide grooves are arranged into a plurality of linear grooves which are uniformly distributed at the bottom of the limiting ring.
Illustratively, the diversion trench forms a certain included angle with the radius of the limit ring, and the diversion trench is spirally arranged at the bottom of the limit ring.
Illustratively, the spiral arrangement direction of the diversion trenches is consistent with the rotation direction of the grinding head in the chemical mechanical grinding process.
The invention also provides a chemical mechanical polishing device, which comprises a polishing head, wherein the polishing head comprises a limiting ring, and the surface of the limiting ring, which is in contact with the polishing pad, is set to be a curved surface.
According to the grinding head and the chemical mechanical grinding device, stress concentration generated when the limiting ring is in contact with the grinding pad in the chemical mechanical grinding process is effectively improved, and scraping damage of the limiting ring to the grinding pad is reduced, so that the chemical mechanical grinding quality of a semiconductor wafer is improved, the yield of products is effectively improved, and meanwhile, the production cost is also reduced.
Drawings
The following drawings of the invention are included to provide a further understanding of the invention. The drawings illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention.
In the drawings:
FIG. 1A is a schematic view of a polishing head of a chemical mechanical polishing apparatus;
and 1B is a schematic diagram of the contact state of a grinding head and a grinding pad in the chemical mechanical grinding process of a limiting ring of the grinding head;
FIG. 2A is a schematic view of a polishing head according to one embodiment of the present invention;
FIG. 2B is a schematic view of a stop collar of the polishing head contacting the polishing pad during CMP in accordance with one embodiment of the present invention;
FIG. 2C is a bottom view of a stop collar according to one embodiment of the present invention;
FIG. 3A is a schematic view of a stop ring of a polishing head colliding with a wafer during a CMP process;
FIG. 3B is a schematic diagram of a stop collar colliding with a wafer during a CMP process according to an embodiment of the invention.
Detailed Description
In the following description, numerous specific details are set forth in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art, that the present invention may be practiced without one or more of these specific details. In other instances, well-known features have not been described in order to avoid obscuring the invention.
In order to provide a thorough understanding of the present invention, a detailed description will be given in the following description to illustrate the polishing head and the chemical mechanical polishing apparatus according to the present invention. It will be apparent that the invention may be practiced without limitation to specific details that are within the skill of one of ordinary skill in the semiconductor arts. The following detailed description of the preferred embodiments of the invention, however, the invention is capable of other embodiments in addition to those detailed.
It should be noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of exemplary embodiments according to the invention. As used herein, the singular is intended to include the plural unless the context clearly dictates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
Exemplary embodiments according to the present invention will now be described in more detail with reference to the accompanying drawings. These exemplary embodiments may, however, be embodied in many different forms and should not be construed as limited to only the embodiments set forth herein. It is to be understood that these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of these exemplary embodiments to those skilled in the art. In the drawings, the thicknesses of layers and regions are exaggerated for clarity, and the same elements are denoted by the same reference numerals, and thus the description thereof will be omitted.
When the wafer is subjected to chemical mechanical polishing, the polishing head adsorbs the wafer to be polished to enable the surface to be polished of the wafer to be contacted with the polishing pad, the wafer to be polished rotates relative to the polishing pad under the drive of the polishing head, and the wafer is polished under the action of the polishing liquid. Fig. 1A shows a schematic structural diagram of a polishing head in a chemical mechanical polishing apparatus, the polishing head supports a wafer 100 by a wafer carrier system 102 disposed on the polishing head, so that a surface of the wafer 100 to be polished contacts with a polishing pad, and fixes the wafer 100 by a retaining ring 101 to prevent the wafer from deviating in position in the polishing head, wherein the retaining ring 101 is connected to a polishing head body (not shown). During the polishing process, the bottom 1011 of the stop collar 101 contacts with the polishing pad and presses and deforms the polishing pad, which may scratch the polishing pad to different degrees, thereby causing the polishing pad to damage the wafer during the subsequent chemical mechanical polishing process, as shown in fig. 1B, which is a schematic diagram illustrating the contact state between the polishing head and the polishing pad during the chemical mechanical polishing process. The polishing head supports the wafer 100 to be polished in contact with the polishing pad 103, and the retainer ring 101 holds the wafer 100 to be polished. Since the polishing head applies a downward pressure to the wafer to be polished during the polishing process and the bottom 1011 of the retaining ring 101 is a horizontal surface and lower than the surface to be polished of the wafer 100 to be polished, the retaining ring 101 presses the polishing pad 103 to deform the polishing pad 103, and especially, stress concentration occurs at two corners of the horizontal surface at the bottom of the retaining ring, such as stress F concentration occurring at the corners in fig. 1B, which causes the polishing pad to be scratched and damaged. The scratching damage of the polishing pad causes damage to wafers in a subsequent chemical mechanical polishing process in different degrees, resulting in a reduction in product yield.
Therefore, the invention provides a grinding head which comprises a limiting ring, wherein the surface of the limiting ring, which is in contact with a grinding pad, is a curved surface.
According to the grinding head disclosed by the invention, the stress concentration generated when the limiting ring is contacted with the grinding pad in the chemical mechanical grinding process is effectively improved, and the scraping damage of the limiting ring to the grinding pad is reduced, so that the chemical mechanical grinding quality of a semiconductor wafer is improved, the yield of products is effectively improved, and the production cost is also reduced.
The structure of the polishing head according to one embodiment of the present invention is described below with reference to fig. 2A, 2B, and 2C, wherein fig. 2A shows a schematic view of the polishing head according to one embodiment of the present invention; FIG. 2B is a schematic diagram illustrating a contact state between a stop collar of the polishing head and a polishing pad during CMP according to an embodiment of the present invention; FIG. 2C illustrates a bottom view of a stop collar according to one embodiment of the present invention; FIG. 3A is a schematic view of a stop ring of a polishing head colliding with a wafer during a CMP process; FIG. 3B is a schematic diagram of a stop collar colliding with a wafer during a CMP process according to an embodiment of the invention.
As shown in fig. 2A, the polishing head includes a retaining ring 201 and a wafer carrier system 202. The wafer 200 to be polished is adsorbed below the wafer carrier system, the wafer carrier system is used for adsorbing the wafer 200 to be polished and enabling the surface to be polished of the wafer 200 to be polished to be in contact with the polishing pad, meanwhile, a certain pressure is applied to the wafer to be polished in the polishing process, and the wafer 200 to be polished is polished at a certain speed under the action of the pressure and the polishing liquid so as to remove a layer to be polished with a certain thickness. Illustratively, the wafer carrier system is a vacuum carrier system. Illustratively, the vacuum carrier system includes a carrier vacuum chamber for adjusting the pressure exerted on the wafer by the vacuum carrier system, a chucking film for chucking the wafer, and the like. The wafer carrier system may be any type of carrier system for supporting a wafer and adjusting the pressure applied to the wafer, and those skilled in the art can select the carrier system according to the needs, and the invention is not limited thereto. Meanwhile, it should be understood that the polishing head of the present embodiment has various functions in the prior art, in which the polishing head supports the wafer to be polished and contacts with the polishing pad, drives the wafer to be polished to rotate and polish, and applies different pressures to the wafer during polishing to control the polishing speed.
With continued reference to fig. 2A, the surface of the bottom of the retainer ring 201 contacting the polishing pad is configured as a curved surface 2011. The bottom of the limiting ring is set to be a curved surface which is concave towards the direction of the grinding pad instead of a plane, so that on one hand, the contact area with the grinding pad is increased in the process of contacting with the grinding pad, the probability of stress concentration is reduced, the scraping of the grinding pad is reduced, and the quality of grinding the semiconductor wafer is effectively improved; meanwhile, due to the reduction of scraping damage to the grinding pad, the service life of the grinding pad can be prolonged, and the production cost is further reduced. The limiting ring can be made of any material with certain strength and hardness, and for example, a ceramic or metal material can be adopted to prolong the service life; or, the limit ring can be improved and manufactured for reducing pollution, and comprises a first limit ring and a second limit ring which are connected from top to bottom, wherein the first limit ring is made of metal or ceramic materials, and the second limit ring is made of materials such as PPS; the material and composition of the stop collar may be selected by one skilled in the art as desired and is not limited herein.
Illustratively, the curved surface is configured as a circular arc-shaped curved surface, and the circular arc-shaped curved surface is concave towards the direction of the grinding pad. As shown in fig. 2A, the curved surface 2011 is configured as an arc-shaped curved surface, which is downward, i.e., is recessed toward the polishing pad, so that in the chemical mechanical polishing process, the polishing pad is pressed by the arc-shaped contact surface, the contact area between the polishing pad and the arc-shaped contact surface in the pressing process can be further increased, the stress concentration is reduced, and the scratch damage to the polishing pad is further reduced. FIG. 2B is a schematic diagram of a polishing head contacting a polishing pad during chemical mechanical polishing according to one embodiment of the present invention. The limiting ring bottom curved surface 2011 set as the arc-shaped curved surface is completely contacted with the grinding pad 203, so that the stress applied by the limiting ring 201 to the grinding pad 203 is uniformly distributed on the contact surface of the arc-shaped bottom surface and the grinding pad 203, the stress concentration is further reduced, the scraping to the grinding pad is reduced, and the grinding quality of the semiconductor wafer is effectively improved. Meanwhile, due to the fact that scraping of the grinding pad is reduced, the service life of the grinding pad is prolonged, and production cost is reduced.
Illustratively, the height of the circular arc-shaped curved surface ranges from 0.85mm to 1.05 mm. As shown in fig. 2A, the curved surface 2011 is configured as a circular arc-shaped curved surface, and the circular arc-shaped height H1 is set between 0.85mm and 1.05 mm. The arc height H1 is set to be 0.85mm-1.05mm, so that on one hand, the fixing effect of the limiting ring on the wafer is guaranteed, the phenomenon that the arc height is too high (higher than 1.05mm) and the wafer cannot be fixed is avoided, on the other hand, the arc curved surface has certain curvature, the surface height is too low (lower than 0.85mm) and the curvature of the bottom of the limiting ring is too small, the contact area between the limiting ring and the grinding pad is insufficient, and the scraping influence effect is not large.
Exemplarily, a diversion trench is arranged at the bottom of the limiting ring. Because the spacing ring is contacted with the curved surface of the grinding pad, in order to avoid the obstruction of the grinding by-products discharged from the inside of the spacing ring to the outside of the spacing ring from the surface of the wafer, the bottom of the spacing ring can be provided with a diversion trench. As shown in fig. 2C, a diversion trench 2012 is disposed on the stop collar 201 with a curved bottom, wherein four curves marked as S in fig. 2C indicate that the bottom of the stop collar 201 is curved. The diversion trench is used for guiding the grinding byproducts out of the inner surface of the wafer from the inner side of the limiting ring to the outer side of the limiting ring. Illustratively, the guide grooves are a plurality of linear grooves which are uniformly distributed at the bottom of the limiting ring, and the grooves among the plurality of linear grooves are beneficial to increasing the efficiency of the guide grooves for guiding the grinding byproducts out. Illustratively, the diversion trench forms a certain included angle with the radius of the limit ring, and the diversion trench is spirally arranged at the bottom of the limit ring. With continued reference to fig. 2C, the channels 2012 are angled with respect to the radius 2013 of the stop collar 201 so as to form a spiral arrangement on the stop collar 201. In the chemical mechanical polishing process, the polishing head drives the wafer to rotate, the guiding direction of the polishing by-products is not along the radius direction, but outwards discharged at a certain angle with the radius, and the guide groove is arranged to form a certain included angle with the radius, so that the guiding of the polishing by-products is facilitated. For example, the spiral arrangement direction of the diversion trenches is consistent with the rotation direction of the grinding head in the chemical mechanical grinding. Illustratively, in the chemical mechanical polishing, the polishing head rotates clockwise, and the direction of the spiral arrangement of the flow guide grooves is set to be clockwise, so as to be consistent with the direction of the polishing by-products discharged from the inside of the wafer surface to the outside of the wafer, thereby further improving the effect of discharging the polishing by-products.
Illustratively, the inner diameter of the stop collar is 0.1mm to 0.2mm larger than the diameter of the wafer. Illustratively, the inner diameter of the stop collar is 0.1mm to 0.2mm larger than the diameter of the wafer. The inner diameter of the existing limit ring is 0-0.1mm larger than the diameter of a wafer, as shown in fig. 1A, the diameter D2 of the limit ring 101 is 0-01mm larger than the diameter D1 of the wafer 100 to be ground, the wafer and the limit ring often vibrate in different degrees in the grinding process, when the vibration direction and amplitude reach a certain degree, collision often occurs, as shown in fig. 3A, when the vibration of the limit ring and the vibration of the wafer reach the F-F position at the same time, the collision occurs between the limit ring and the wafer, the collision causes uneven stress on the edge of the wafer in the grinding process, and grinding damage on the edge in different degrees, therefore, the inner diameter of the limit ring is 0.1-0.2 mm larger than the diameter of the wafer with grinding, as shown in fig. 2A, the diameter D4 of the limit ring 201 is 0.1-0.2 mm larger than the diameter D3 of the wafer 200 to be ground. Therefore, the vibration area of the limiting ring is increased, so that the limiting ring is vibrated at the position where the wafer vibration is not easy to reach the consistency, as shown in fig. 3B, the collision between the limiting ring and the wafer with the grinding function is reduced, the edge grinding damage of the semiconductor wafer is reduced, the chemical grinding quality is further improved, and the product yield is improved.
The invention also provides a chemical mechanical polishing device, which comprises a polishing head, wherein the polishing head comprises a limiting ring, and the surface of the limiting ring, which is in contact with the polishing pad, is set to be a curved surface.
According to the grinding head and the chemical mechanical grinding device, stress concentration generated when the limiting ring is in contact with the grinding pad in the chemical mechanical grinding process is effectively improved, and scraping damage of the limiting ring to the grinding pad is reduced, so that the chemical mechanical grinding quality of a semiconductor wafer is improved, the yield of products is effectively improved, and meanwhile, the production cost is also reduced.
The present invention has been illustrated by the above embodiments, but it should be understood that the above embodiments are for illustrative and descriptive purposes only and are not intended to limit the invention to the scope of the described embodiments. Furthermore, it will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, and that many variations and modifications may be made in accordance with the teachings of the present invention, which variations and modifications are within the scope of the present invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.

Claims (8)

1. The grinding head is characterized by comprising a limiting ring, wherein the surface of the limiting ring, which is contacted with a grinding pad, is set to be a curved surface, and the curved surface is set to be a circular arc-shaped curved surface which is sunken towards the direction of the grinding pad between the inner surface and the outer surface of the limiting ring so as to increase the contact area of the bottom of the limiting ring and the grinding pad.
2. The polishing head of claim 1, wherein the height of the arcuate curved surface ranges from 0.85mm to 1.05 mm.
3. The polishing head of claim 1, wherein the stop collar has an inner diameter that is 0.1mm to 0.2mm larger than a diameter of a wafer to be polished.
4. The polishing head of claim 1 wherein said stop collar defines channels in a bottom portion thereof.
5. The polishing head of claim 4 wherein said channels are provided as a plurality of linear grooves uniformly distributed in the bottom of said stop collar.
6. The polishing head of claim 5, wherein said channels are angled with respect to a radius of said retaining ring, said channels being helically disposed at a bottom of said retaining ring.
7. The polishing head of claim 6, wherein the channels are helically arranged in a direction that is substantially the same as the direction of rotation of the polishing head during chemical mechanical polishing.
8. A chemical mechanical polishing device, comprising the polishing head of any one of claims 1-7.
CN201710758008.8A 2017-08-29 2017-08-29 Grinding head and chemical mechanical grinding device Active CN109420969B (en)

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US20050113002A1 (en) * 2003-11-24 2005-05-26 Feng Chen CMP polishing heads retaining ring groove design for microscratch reduction
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TWI386989B (en) * 2005-02-25 2013-02-21 Ebara Corp Polishing apparatus and polishing method
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US6602116B1 (en) * 1997-12-30 2003-08-05 Applied Materials Inc. Substrate retaining ring

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