CN211079403U - Crystal growth device by guided mode method - Google Patents
Crystal growth device by guided mode method Download PDFInfo
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- CN211079403U CN211079403U CN201921938675.5U CN201921938675U CN211079403U CN 211079403 U CN211079403 U CN 211079403U CN 201921938675 U CN201921938675 U CN 201921938675U CN 211079403 U CN211079403 U CN 211079403U
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Abstract
The utility model discloses a crystal growth device by a guide mold method, which is characterized in that a mold component is arranged in a crucible, a plurality of longitudinal channels are arranged below the mold component, the mold component further comprises a central mold piece and mold pieces, the central mold piece and the mold pieces are oppositely arranged, a plurality of central mold pieces are arranged between the mold pieces, a gap is arranged between adjacent mold pieces or between the mold pieces and the central mold piece, the raw materials in the crucible are heated and melted by utilizing the capillary phenomenon between the gaps, and then slowly ascended to the surface of the mold from the bottom of the mold, and seed crystals are arranged on the upper surface of the mold, so that the growth of L YSO crystals by the guide mold method can be realized.
Description
Technical Field
The utility model relates to a crystal growth device especially relates to an L YSO crystal mold-guiding method growth device.
Background
Ce3+The doped L YSO crystal is scintillation crystal with excellent combination property and densityThe crystal has the advantages of large size, fast fluorescence attenuation, high light output, no deliquescence, and wide application in the fields of nuclear physics, medical PET-CT and the like, at present, L YSO crystals with larger size can be obtained at home and abroad, at present, the artificially grown crystals mainly adopt a pulling method, high-quality large single crystals can be quickly obtained, and the 'meltback' and 'necking' processes of the pulling method have obvious effects on reducing the dislocation density of the crystals, reducing the mosaic structure and improving the crystal quality, but the Ce L YSO crystals have numerous components, the melting point can reach 2050 ℃, and the Ce can be widely used in the fields of nuclear physics, medical PET-CT and the like3+The method has the advantages that the method has small coagulation coefficient in the crystal, the grown crystal is easy to have the problems of uneven components, large difference of head and tail scintillation performance, difficult growth of the crystal and the like, the crystal is grown by adopting a guide die method, the convection effect of a melt in a die is very small, and in addition, the melt is not stirred, so that the doped crystal with uniform components is easy to obtain.
SUMMERY OF THE UTILITY MODEL
The utility model realizes a crystal growing device by a guide die method, which is characterized by comprising a crucible and a die assembly; disposing said mold assembly in said crucible; a plurality of longitudinal channels are arranged below the die assembly; the die assembly further comprises a central die piece and a die piece; the central die piece and the die piece are oppositely arranged; a plurality of central die sheets are arranged among the die sheets; a gap is arranged between the adjacent die pieces or between the die piece and the central die piece.
Further, a first inclined edge is arranged at the top end of the die piece; second inclined edges are respectively arranged on two sides of the top end of the central die piece; a groove is formed between the first inclined edge and the second inclined edge.
Further, the angle of the first inclined edge is 0-75 degrees; the angle of the second inclined edge is 0-75 degrees; the angle of the groove is 0-150 degrees.
Furthermore, the side edges of the central die piece and the die piece are welded pairwise.
Furthermore, the number of the central die pieces is 1-15.
Furthermore, the gap is 0.2mm-0.6 mm.
Further, the height of the channel is 10mm-150 mm; the length is 20mm-200 mm.
The technical effect of the utility model lies in, this crystal growth device utilizes the capillary phenomenon between the gap, the raw materials heating in the crucible melts the back, can follow the mould bottom and slowly rise to the mould surface, place the seed crystal on the mould upper surface, can realize L YSO single crystal's guide mode growth3+The method has the advantages that the method is small in coagulation coefficient in the crystal, the grown crystal is easy to have the problems of uneven components, large difference of head and tail scintillation performance, difficult growth of the crystal and the like, the crystal is grown by adopting a guide die method, the convection effect of a melt in a die is very small, and in addition, no stirring exists in the melt, so that the dopant crystal with uniform components is easy to obtain.
Drawings
Fig. 1 is a schematic view of the overall device of the present invention.
Fig. 2 is a schematic front view of the present invention.
Fig. 3 is a schematic view of the mold assembly of the present invention.
Figure 4 is a side schematic view of a die set of the die assembly of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
Referring to fig. 1, 2 and 3, the embodiment discloses a crystal growth apparatus by a guided mode method, which comprises a crucible 1 and a mold assembly 10, wherein the mold assembly 10 is arranged in the crucible 1, a plurality of longitudinal channels 4 are arranged below the mold assembly 10, the mold assembly further comprises a central mold sheet 3 and mold sheets 2, the central mold sheet 3 and the mold sheets 2 are oppositely arranged, a plurality of central mold sheets 3 can be arranged between the mold sheets 2, in the embodiment, 1 central mold sheet 3 is taken as an example, if a plurality of central mold sheets 3 are arranged between the mold sheets 2, a gap 9 is arranged between adjacent central mold sheets 3 or between the mold sheets 2 and the central mold sheet 3, the gap 9 mainly has the function of utilizing the capillary phenomenon between the gaps, after raw materials in the crucible are heated and melted, the raw materials can slowly rise to the surface of the mold from the bottom of the mold, and seed crystals are placed on the upper surface of the mold, so that L YSO single crystal growth can be realized by the guided mode method.
In order to realize the crystal growth process by adopting a guide die method, in order to ensure that the flow convergence of the molten liquid level is gentle and mild and is beneficial to the growth of crystals, the two sides of the top end of the central die piece 3 are respectively provided with the second inclined edges 7, a groove 8 is formed between the first inclined edges 6 and the second inclined edges 7, and the upper surface of the die assembly 10 adopts an inclined groove design.
In the practical application of the embodiment, it is found that when the angle of the first inclined edge 6 is 0-75 degrees, the angle of the second inclined edge 7 is 0-75 degrees, and the angle of the groove 8 is 0-150 degrees, the growth of the Ce: L YSO crystal is most facilitated, the crystal part has uniform components, the difference of the head and tail scintillation properties is small, and the crystal is easy to grow.
To achieve the application of the mold assembly 10, the central mold piece 3 and the mold piece 2 are fixed together, and for this purpose, the sides of the central mold piece 3 and the mold piece 2 are welded two by two.
The number of the central mold pieces 3 in the embodiment is 1, and we find that the number of the central mold pieces 3 is 1-15 by increasing the number of the central mold pieces 3, and the grown crystal has the technical effects of uniform components, small difference of head and tail scintillation properties and easy growth of the crystal.
In order to find the best mode in the process of growing L YSO single crystal by the guided mode method, the best mode of growing crystal by the guided mode method is found when the gap is 0.4mm and the height of the channel 4 is 30mm-50mm, the quality of the produced crystal is the best, and the gap in example 1 is 0.4 mm.
As a preferred embodiment of the present invention, it is obvious to those skilled in the art that the present invention is not limited to the details of the above-described exemplary embodiments, and that the present invention can be implemented in other specific forms without departing from the spirit or essential characteristics of the present invention, and that the scope of the present invention is also encompassed by the present invention. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be combined as appropriate to form other embodiments understood by those skilled in the art.
Claims (7)
1. A crystal growth device by a guide mode method is characterized by comprising a crucible and a mould assembly; disposing said mold assembly in said crucible; a plurality of longitudinal channels are arranged below the die assembly; the die assembly further comprises a central die piece and a die piece; the central die piece and the die piece are oppositely arranged; a plurality of central die sheets are arranged among the die sheets; a gap is arranged between the adjacent central die pieces or between the die pieces and the central die piece.
2. The apparatus for crystal growth by guided mode method according to claim 1, wherein; arranging a first inclined edge at the top end of the die piece; second inclined edges are respectively arranged on two sides of the top end of the central die piece; a groove is formed between the first inclined edge and the second inclined edge.
3. The apparatus for crystal growth by guided mode method of claim 2, wherein said first angled edge has an angle of 0 ° to 75 °; the angle of the second inclined edge is 0-75 degrees; the angle of the groove is 0-150 degrees.
4. The apparatus of claim 1, wherein said central die plate is welded to said die plate on each of said sides.
5. The apparatus of claim 1, wherein the number of said central mold pieces is from 1 to 15.
6. The apparatus of claim 1, wherein said gap is 0.2-0.6 mm.
7. The apparatus of claim 1, wherein said channel has a height of 10mm to 150 mm; the length is 20mm-200 mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921938675.5U CN211079403U (en) | 2019-11-08 | 2019-11-08 | Crystal growth device by guided mode method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201921938675.5U CN211079403U (en) | 2019-11-08 | 2019-11-08 | Crystal growth device by guided mode method |
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| CN211079403U true CN211079403U (en) | 2020-07-24 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114875480A (en) * | 2022-04-28 | 2022-08-09 | 中材人工晶体研究院有限公司 | Single crystal furnace, heating and heat-preserving system thereof and method for growing gallium oxide crystals |
-
2019
- 2019-11-08 CN CN201921938675.5U patent/CN211079403U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114875480A (en) * | 2022-04-28 | 2022-08-09 | 中材人工晶体研究院有限公司 | Single crystal furnace, heating and heat-preserving system thereof and method for growing gallium oxide crystals |
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