CN210953274U - Device for detecting semiconductor silicon carbide substrate large-size micropipe by using gas - Google Patents
Device for detecting semiconductor silicon carbide substrate large-size micropipe by using gas Download PDFInfo
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- CN210953274U CN210953274U CN201920988851.XU CN201920988851U CN210953274U CN 210953274 U CN210953274 U CN 210953274U CN 201920988851 U CN201920988851 U CN 201920988851U CN 210953274 U CN210953274 U CN 210953274U
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Abstract
The application discloses a device for detecting a semiconductor silicon carbide substrate large-size micropipe by using gas. The device comprises a sample adsorption unit, a vacuumizing device and a vacuum pipeline for communicating the sample adsorption unit with the vacuumizing device, wherein a specific gas leak detector is communicated with the vacuum pipeline; the sample adsorption unit comprises a vacuum chuck, and an adsorption area of the vacuum chuck is provided with a sealing ring matched with the edge of the semiconductor silicon carbide substrate. The method and the device can accurately detect the defect condition of the large-size micropipe in the substrate, have high detection efficiency and are suitable for large-scale industrialized defect detection.
Description
Technical Field
The utility model relates to a semiconductor silicon carbide substrate defect detecting field specifically says so an utilize gaseous device that detects jumbo size microtubule in the semiconductor silicon carbide substrate.
Background
Silicon carbide (SiC) semiconductor materials are third generation wide band GaP semiconductor materials developed after first generation element semiconductor materials (Si) and second generation compound semiconductor materials (GaAs, GaP, InP, etc.), and SiC semiconductor materials have great application potential in the aspects of high temperature, high frequency, high power, photoelectron, radiation resistance, etc. due to the characteristics of wide band GaP, high critical breakdown electric field, high thermal conductivity, high saturated electron mobility, etc.
Micropipes are common defects in silicon carbide single crystals, and most of the discussions on the mechanism of micropipe defect formation are based on the Frank theory of micropipes combined with the large bergers vector (several times the unit cell size) hyperspiracy dislocations. In the process of growing the silicon carbide single crystal, high strain energy along the core direction of the super-screw dislocation can cause the part to be preferentially sublimated, so that the defect has the characteristic of hollow, generally, in the process of growing the crystal, the defect part of the micro-tube can be simultaneously grown and sublimated, the interior of the hollow tube of the micro-tube is often multi-faceted, the size of the micro-tube is different from several micrometers to dozens of micrometers, and the yield is reduced due to the direct influence of the defect of the micro-tube on subsequent devices. In addition to the influence on the yield of devices, for some micro-tubes with larger sizes (generally larger than 20 μm), the micro-tubes cannot be completely covered after the substrate epitaxy, so that in the photoetching stage after the epitaxy, when an epitaxial wafer is in vacuum adsorption, photoresist permeates to the back of a silicon carbide substrate along the micro-tubes, the photoetching process is seriously influenced, and even equipment downtime is caused. Therefore, whether the substrate has the large-size micropipes or not is detected in the silicon carbide single crystal polished wafer stage, and the influence of the large-size micropipes on the use of the subsequent substrate is avoided.
Currently, the method for detecting and screening large-sized microtubes is to observe and measure the size of each microtube under a microscope. The method has the defects of long time consumption, low efficiency and unsuitability for production.
SUMMERY OF THE UTILITY MODEL
To the defect that exists among the prior art, the utility model aims to provide an utilize gaseous device that detects semiconductor carborundum substrate jumbo size microtubule, the utility model has the advantages of can accurately judge whether exist jumbo size microtubule in detecting the selection semiconductor carborundum substrate, and detection efficiency is high, is applicable to extensive industrialization defect detection.
In order to achieve the above purpose, the utility model adopts the technical proposal that:
the utility model provides an utilize gaseous device that detects semiconductor carborundum substrate jumbo size microtubule, include: the device comprises a sample adsorption unit, a vacuumizing device, a specific gas leak detector and a motor for providing power for the vacuumizing device;
the sample adsorption unit is communicated with the vacuumizing device through a vacuum pipeline; the specific gas leak detector is communicated with the vacuum pipeline;
the sample adsorption unit comprises a vacuum chuck, the vacuum chuck comprises an adsorption area of the semiconductor silicon carbide substrate and a through hole for communicating the adsorption area with the vacuum pipeline,
a sealing ring matched with the edge of the semiconductor silicon carbide substrate is arranged on the adsorption area;
the specific gas leak detector is used for detecting detection gas penetrating through the semiconductor silicon carbide substrate, and when the specific gas leak detector is a helium gas leak detector such as a helium mass spectrometer leak detector, the detection gas is helium gas;
the large-size microtubes are microtubes with the diameter (or pore diameter) of more than 15 micrometers, preferably the microtubes with the diameter of more than 18 micrometers, and more preferably the microtubes with the diameter of more than 20 micrometers.
Further, the vacuum pipeline is provided with a closed vacuum cavity; preferably, the closed vacuum cavity is arranged in the vacuum pipeline between the sample adsorption unit and the specific gas leak detector;
preferably, the volume of airtight vacuum cavity is 1-5L, and preferred 2L is when the evacuation, and the little volume can realize reaching low vacuum fast, shortens evacuation time and check-out time, and big volume is favorable to stabilizing the vacuum, has the cushioning effect simultaneously, prevents that the negative pressure from causing the condition of damaging the semiconductor carborundum substrate that awaits measuring suddenly too big to take place.
Further, the vacuum pipeline is provided with an air valve communicated with the atmosphere, and preferably, the air valve is arranged at the closed vacuum cavity so as to control the negative pressure in the vacuum pipeline.
Furthermore, an annular groove with the circumference less than or equal to that of the semiconductor silicon carbide substrate is arranged on the adsorption area, the sealing ring is arranged in the annular groove, and when the semiconductor silicon carbide substrate adsorption device is used, the semiconductor silicon carbide substrate is arranged on the sealing ring; the sealing ring can play a role in sealing and also can play a role in buffering the semiconductor silicon carbide substrate.
Furthermore, the adsorption area is arranged horizontally upwards, and the through hole is positioned in the middle of the adsorption area;
further, the vacuum pipelines are arranged in a T shape, the T shape comprises a transverse branch and a vertical branch perpendicular to the transverse branch, the sample adsorption unit and the specific gas leak detector are respectively located at two tail ends of the transverse branch, and the vacuum pumping device is located at the tail end of the vertical branch;
furthermore, the T-shaped arrangement is parallel to the horizontal plane, a pipeline from the branch of the T-shaped to the sample adsorption unit is a vacuum corrugated pipe, a pipeline from the branch of the T-shaped to the vacuum pumping device is sequentially a vacuum corrugated pipe and an elbow joint, and a pipeline from the branch of the T-shaped to the specific gas leak detector is an elbow joint;
the vacuum pipeline has the advantages that the pipeline between the specific gas leak detector and the sample adsorption unit is in a straight-through design, and the elbow joint is directly connected with the specific gas leak detector, so that the partial pressure loss of gas for detection reaching the specific gas leak detector is reduced, the time for detection is shortened, and the accuracy of a detection result is improved.
Further, vacuum clamps are arranged at the connection positions of the pipe orifices of the vacuum pipelines, and a pipeline sealing O ring is sleeved at the position where the pipe orifices are connected in each vacuum clamp.
The device has the following beneficial effects:
the utility model discloses a detection of jumbo size microtubule is judged and is provided a new installation and detection method in the semiconductor silicon carbide substrate, and need not carry out the microtubule defect through the microscope and look for and the size measurement is judged in advance, has the characteristics that detection efficiency is high, detection accuracy is high, and is applicable to extensive industrialization defect detection.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the application and together with the description serve to explain the application and not to limit the application. In the drawings:
fig. 1 is a perspective view of an apparatus for inspecting a large-sized micropipe of a semiconductor silicon carbide substrate using a gas.
Fig. 2 is a side view of the apparatus of fig. 1 at the vacuum chuck.
Fig. 3 is an enlarged sectional view of a portion of circle i shown in fig. 2.
Fig. 4 is an enlarged sectional view of a portion indicated by circle ii in fig. 2.
Fig. 5 is a top view of the vacuum chuck.
Fig. 6 is a cross-sectional view of the vacuum chuck of fig. 5 at a-a.
Wherein the reference numbers in the drawings are as follows:
the device comprises a vacuumizing device 1, a specific gas leak detector 2, a vacuum sucker 3, an adsorption area 4, a through hole 5, a sealing ring 6, a closed vacuum cavity 7, an air valve 8, an annular groove 9, a semiconductor silicon carbide substrate 10, a vacuum hoop 11, a pipeline sealing O ring 12, a vacuum corrugated pipe 13, a tee joint 14 and an elbow joint 15.
Detailed Description
In order to more clearly explain the overall concept of the present application, the following detailed description is given by way of example in conjunction with the accompanying drawings.
Example 1 apparatus for inspecting semiconductor silicon carbide substrate large-sized micro tube by gas
As shown in fig. 1, the apparatus for detecting a large-size micropipe of a semiconductor silicon carbide substrate by using gas provided by the embodiment includes: the vacuum device comprises a sample adsorption unit, a vacuumizing device 1 (specifically an air pump), a vacuum pipeline for communicating the sample adsorption unit with the vacuumizing device 1, and a motor for providing power for the vacuumizing device 1; a specific gas leak detector 2 (specifically, a helium mass spectrometer leak detector, model number ZQJ-3000, manufactured by Beijing Zhongke apparatus GmbH, which can use hydrogen or helium for leak detection, and can also be other gas leak detectors) is communicated with the vacuum pipeline;
as shown in fig. 2 and 3, the sample adsorption unit includes a vacuum chuck 3, the vacuum chuck 3 including an adsorption region 4 of a semiconductor silicon carbide substrate 10 and a through-hole 5 (shown in fig. 4) communicating the adsorption region 4 and a vacuum pipe; the adsorption area 4 is arranged horizontally upwards, and the through hole 5 is positioned in the middle of the adsorption area 4; a sealing ring 6 (specifically a sealing O ring) matched with the edge of the semiconductor silicon carbide substrate 10 is arranged on the adsorption area 4; an annular groove 9 with the perimeter slightly smaller than that of a semiconductor silicon carbide substrate 10 is arranged on the adsorption area 4, and a sealing ring 6 is arranged in the annular groove 9;
as shown in fig. 5 and 6, the vacuum chuck 3 is funnel-shaped, the opening and the edge of the upper part of the vacuum chuck 3 are the adsorption region 4 of the semiconductor silicon carbide substrate to be tested, the adsorption region 4 is arranged horizontally upward, the edge of the adsorption region 4 is provided with an annular groove 9 with an upward opening, and the middle part of the adsorption region 4 is provided with a through hole 5; the shape and the size of the adsorption area 4 are matched with those of a semiconductor silicon carbide substrate to be tested;
as shown in fig. 1 and 2, a sealed vacuum chamber 7 is provided at the vacuum pipe between the sample adsorption unit and the specific gas leak detector 2; the volume of the closed vacuum cavity 7 is 2L; the volume can quickly reach low vacuum degree, shortens the vacuumizing time and the detection time, has the buffer function and prevents the damage caused by sudden overlarge negative pressure; an air valve 8 communicated with the atmosphere is arranged at the closed vacuum cavity 7 of the vacuum pipeline; the closed vacuum cavity 7 is arranged right below the sample adsorption unit and is directly connected with the lower part of the through hole 5 of the vacuum chuck 3 in the sample adsorption unit;
as shown in fig. 1, the vacuum pipes are arranged in a T-shape, the T-shape comprises a transverse branch and a vertical branch perpendicular to the transverse branch, the sample adsorption unit and the specific gas leak detector 2 are respectively located at two ends of the transverse branch, and the vacuum extractor 1 is located at an end of the vertical branch;
the T-shaped arrangement is parallel to the horizontal plane, a pipeline from a branch of the T-shaped to the sample adsorption unit is set as a vacuum corrugated pipe 13, a pipeline from the branch of the T-shaped to the vacuum pumping device 1 is sequentially set as the vacuum corrugated pipe 13 and an elbow joint 15, a pipeline from the branch of the T-shaped to the specific gas leak detector 2 is set as the elbow joint 15, and a branch of the T-shaped is set as a three-way joint 14.
As shown in fig. 1, a vacuum clamp 11 is arranged at each pipe orifice joint of the vacuum pipeline; a pipe sealing O-ring 12 is sleeved on the position where the pipe orifice is connected in each vacuum clamp 11 (as shown in fig. 4).
The above device for detecting semiconductor silicon carbide substrate large-size micropipe by using gas is used as follows (helium is used as detection gas)4He, specific gas leak detector 2 is a helium mass spectrometer leak detector ZQJ-3000 for example):
1) selecting a vacuum chuck 3 corresponding to the size of a semiconductor silicon carbide substrate 10 to be tested, horizontally placing a blind plate (without pores such as micropipes) on a sealing ring 6 of an adsorption area 4 of the vacuum chuck 3, closing an air valve 8, and opening a vacuumizing device 1 to enable negative pressure to reach 103Pa or less, usually 103Pa to 10-2A Pa range; meanwhile, when the negative pressure reaches below 1500Pa, the leak detector is started; spraying helium gas near all interfaces of the whole device one by one, and checking test data of the helium mass spectrometer leak detector of each interface one by one, wherein the data of the helium mass spectrometer leak detector is not increased suddenly; after the confirmation steps are completed, the air tightness of the device is ensured to be free from problems;
2) closing the vacuumizing device 1, opening the air valve 8, taking down the blind plate, and replacing the blind plate with a semiconductor silicon carbide substrate 10 to be tested;
3) the air valve 8 is closed, the vacuum pumping device 1 is opened, and the negative pressure reaches 103Pa or less, usually 103Pa to 10- 1A Pa range; at this time, the upper surface, i.e., the second side surface, of the semiconductor silicon carbide substrate 10 to be tested is at normal atmospheric pressure, and the lower surface, i.e., the first side surface, is at negative pressure; when the negative pressure reaches below 1500Pa, starting the leak detector;
4) spraying helium on the upper surface, namely the vicinity of the second side surface, of the semiconductor silicon carbide substrate 10 to be tested, observing test data of the helium mass spectrometer leak detector, namely judging whether a large-size micro-tube exists on the semiconductor silicon carbide substrate 10 to be tested or not through the amount of the helium on the first side surface;
if the helium amount penetrating through the first side surface suddenly and continuously rises, judging that a large-size micropipe exists in the semiconductor silicon carbide substrate to be detected;
if the amount of helium penetrating through the first side surface is unchanged and is consistent with that before the detection gas is applied, judging that the semiconductor silicon carbide substrate to be detected does not have a large-size micropipe;
the diameter (or aperture) of the large-size microtube is more than 15 micrometers, preferably more than 18 micrometers, and more preferably more than 20 micrometers;
5) after the detection is finished, the vacuumizing device 1 is closed, the air valve 8 is opened, the atmosphere reaches the lower surface of the semiconductor silicon carbide substrate 10 to be detected through the air valve 8, so that the air pressure difference between the two side surfaces of the semiconductor silicon carbide substrate 10 to be detected is avoided, and the semiconductor silicon carbide substrate 10 to be detected is taken down.
Those not described in detail in this specification are within the skill of the art. The above description is only an example of the present application and is not intended to limit the present application. Various modifications and changes may occur to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the scope of the claims of the present application.
Claims (10)
1. An apparatus for detecting a semiconductor silicon carbide substrate large-size micropipe by using gas, characterized in that: it includes: the device comprises a sample adsorption unit, a vacuumizing device, a specific gas leak detector and a motor for providing power for the vacuumizing device;
the sample adsorption unit is communicated with the vacuumizing device through a vacuum pipeline; the specific gas leak detector is communicated with the vacuum pipeline;
the sample adsorption unit comprises a vacuum chuck, the vacuum chuck comprises an adsorption area of the semiconductor silicon carbide substrate and a through hole for communicating the adsorption area with the vacuum pipeline,
and a sealing ring matched with the edge of the semiconductor silicon carbide substrate is arranged on the adsorption area.
2. The apparatus of claim 1, wherein: the vacuum pipeline is provided with a closed vacuum cavity.
3. The apparatus of claim 2, wherein: the closed vacuum cavity is arranged on the vacuum pipeline between the sample adsorption unit and the specific gas leak detector.
4. The apparatus of claim 2 or 3, wherein: the volume of the closed vacuum cavity is 1-5L.
5. The apparatus of claim 2, wherein: the vacuum pipeline is provided with an air valve communicated with the atmosphere; the air valve is arranged at the closed vacuum cavity.
6. The apparatus of claim 1 or 2, wherein: an annular groove with the circumference less than or equal to that of the semiconductor silicon carbide substrate is arranged on the adsorption area, and the sealing ring is arranged in the annular groove.
7. The apparatus of claim 1 or 2, wherein: the adsorption area is arranged horizontally upwards, and the through hole is located in the middle of the adsorption area.
8. The apparatus of claim 1 or 2, wherein: the vacuum pipeline is arranged in a T shape, the T shape comprises a transverse branch and a vertical branch perpendicular to the transverse branch, the sample adsorption unit and the specific gas leak detector are respectively located at two tail ends of the transverse branch, and the vacuumizing device is located at the tail end of the vertical branch.
9. The apparatus of claim 8, wherein: the T-shaped distribution is parallel to the horizontal plane, a pipeline from a branch of the T-shaped distribution to the sample adsorption unit is a vacuum corrugated pipe, a pipeline from the branch of the T-shaped distribution to the vacuum pumping device is sequentially a vacuum corrugated pipe and an elbow joint, and a pipeline from the branch of the T-shaped distribution to the specific gas leak detector is an elbow joint.
10. The apparatus of claim 1 or 2, wherein: vacuum clamps are established to every mouth of pipe junction of vacuum pipe, every in the vacuum clamps the position department overcoat that the mouth of pipe is connected establishes the pipeline sealing O circle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920988851.XU CN210953274U (en) | 2019-06-27 | 2019-06-27 | Device for detecting semiconductor silicon carbide substrate large-size micropipe by using gas |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920988851.XU CN210953274U (en) | 2019-06-27 | 2019-06-27 | Device for detecting semiconductor silicon carbide substrate large-size micropipe by using gas |
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| Publication Number | Publication Date |
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| CN210953274U true CN210953274U (en) | 2020-07-07 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201920988851.XU Active CN210953274U (en) | 2019-06-27 | 2019-06-27 | Device for detecting semiconductor silicon carbide substrate large-size micropipe by using gas |
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Address after: No.99, Tianyue South Road, Huaiyin District, Jinan City, Shandong Province Patentee after: Shandong Tianyue advanced technology Co., Ltd Address before: 250100 AB Block 1106-6-01, Century Fortune Center, West Side of Xinyu Road, Jinan High-tech Zone, Shandong Province Patentee before: Shandong Tianyue Advanced Materials Technology Co.,Ltd. |