CN210560880U - Large-size micro-tube detection adsorption device in semiconductor silicon carbide substrate - Google Patents
Large-size micro-tube detection adsorption device in semiconductor silicon carbide substrate Download PDFInfo
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- CN210560880U CN210560880U CN201920828818.0U CN201920828818U CN210560880U CN 210560880 U CN210560880 U CN 210560880U CN 201920828818 U CN201920828818 U CN 201920828818U CN 210560880 U CN210560880 U CN 210560880U
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Abstract
The application discloses a large-size micro-tube detection adsorption device in a semiconductor silicon carbide substrate. The device comprises a sample adsorption unit, a vacuumizing device, a vacuum pipeline for communicating the sample adsorption unit with the vacuumizing device, and a motor for providing power for the vacuumizing device; the sample adsorbs the unit and includes vacuum chuck, semiconductor silicon carbide substrate adsorption area is established at vacuum chuck's top, semiconductor silicon carbide substrate adsorption area establishes a plurality of openings ring channel up, vacuum chuck still is equipped with at least one intercommunication semiconductor silicon carbide substrate adsorption area with the through-hole of vacuum pipeline. The utility model discloses can be arranged in detecting semiconductor carborundum substrate jumbo size microtubule defect condition, detection efficiency is high, is applicable to extensive industrialization defect detection.
Description
Technical Field
The utility model relates to a semiconductor carborundum substrate detection area specifically says so a detection adsorption equipment of jumbo size microtubule in semiconductor carborundum substrate, and the device is particularly useful for the jumbo size microtubule detection of semiconductor carborundum substrate.
Background
Silicon carbide single crystal is one of the most important third-generation semiconductor materials, and is widely applied to the fields of power electronics, radio frequency devices, photoelectronic devices and the like because of the excellent properties of large forbidden bandwidth, high saturated electron mobility, strong breakdown field, high thermal conductivity and the like.
Micropipes are defects common in silicon carbide single crystals, and the micropipes generally extend throughout the crystal along the direction of growth of the single crystal, and vary in size from a few microns to tens of microns. For some micro-tubes with larger sizes (generally larger than 20 μm), the substrate extends to the surface of the epitaxial layer along with the growth of the epitaxial layer in the epitaxial growth process, so that in the photoetching stage after the epitaxial growth, when the epitaxial wafer is in vacuum adsorption, the photoresist permeates to the back of the silicon carbide substrate along the micro-tube, the photoetching process is seriously affected, and even equipment is down. In addition, the formation of epitaxial defects is more likely to be caused by the large-sized micropipes, and the yield of the device is reduced. Therefore, whether the substrate has the large-size micro-tube or not is tested in the silicon carbide single crystal polishing stage, and the silicon carbide single crystal wafer with the large-size micro-tube is prevented from being used subsequently, so that the subsequent process is avoided being scrapped or the yield is reduced.
At present, the method for detecting and screening the large-size microtubules is to measure the sizes of the microtubules under a microscope. The method has the defects that the method needs to search the microtubes existing in the substrate under a microscope and carry out size measurement one by one, has long time consumption and low efficiency, and is not suitable for production use.
SUMMERY OF THE UTILITY MODEL
To the defect that exists among the prior art, the utility model aims to provide a jumbo size microtubule detects adsorption equipment in semiconductor carborundum substrate, the device can accurately judge whether there is the jumbo size microtubule condition in semiconductor carborundum substrate, and detection efficiency is high, is applicable to extensive industrialization defect detection.
In order to achieve the above purpose, the utility model adopts the technical proposal that:
the utility model provides a jumbo size microtubule detects adsorption equipment in semiconductor carborundum substrate, include: the device comprises a sample adsorption unit, a vacuumizing device, a vacuum pipeline for communicating the sample adsorption unit with the vacuumizing device, and a motor for providing power for the vacuumizing device;
the sample adsorbs the unit and includes vacuum chuck, semiconductor carborundum substrate adsorption area is established at vacuum chuck's top, semiconductor carborundum substrate adsorption area establishes a plurality of opening ring channels up (like circular recess or square groove), vacuum chuck still is equipped with at least one intercommunication semiconductor carborundum substrate adsorption area with the through-hole of vacuum pipeline.
In the detection and absorption device, the annular grooves with upward openings are concentric, the through hole is arranged at the center of the annular grooves with upward openings, the annular grooves with upward openings are communicated through at least one groove extending to the through hole in the radial direction, and the groove can be used for gas and liquid to flow through.
In the detection and absorption device, the maximum diameter of the annular grooves with the upward openings is equal to the diameter of the semiconductor silicon carbide substrate to be detected or is smaller than the diameter of the semiconductor silicon carbide substrate to be detected by 2 mm.
In the detection and absorption device, the heights of the groove walls of the annular grooves with the upward openings are the same, so that the semiconductor silicon carbide substrate to be detected on the annular grooves can be supported;
and/or the longitudinal section of the groove wall of each annular groove is flat at the top and vertical at the side edge, or sharp at the top and inclined outwards at the side edge.
In the detection and adsorption device, the annular grooves with the upward openings are made of a non-deformable metal, preferably stainless steel, aluminum alloy or titanium alloy, and more preferably aluminum alloy so as to adsorb and adhere the detection liquid.
In the detection and absorption device, a three-way pipe is arranged below the through hole and comprises an upper pipe orifice, a left pipe orifice and a right pipe orifice, the upper pipe orifice is communicated with the lower part of the through hole, the left pipe orifice is communicated with the vacuum pipeline through a first vacuum baffle valve, and the right pipe orifice is communicated with the atmosphere through a second vacuum baffle valve.
In the detection and absorption device, a gas-water separation filter is arranged on a pipeline of the first vacuum baffle valve communicated with the vacuum pipeline so as to prevent detection liquid from entering the vacuumizing device such as a vacuum pump to influence the operation of the vacuumizing device.
In the detection adsorption device, a sucker seat is arranged at the lower part of the through hole, the sucker seat is sleeved outside the through hole, a groove with an upward opening is arranged at the periphery of the sucker seat, an elastic O ring is arranged in the groove, the lower surface of the vacuum sucker is connected with the upper part of the sucker seat through the elastic O ring (so as to play a role in buffering the semiconductor silicon carbide substrate to be detected placed on the upper surface of the vacuum sucker), and the lower part of the sucker seat is communicated with an upper pipe opening of the three-way pipe;
preferably, the vacuum clamps are connected between the lower part of the sucker seat and the upper pipe orifice of the three-way pipe, between the first vacuum baffle valve and the left pipe orifice of the three-way pipe, between the second vacuum baffle valve and the right pipe orifice of the three-way pipe, between the first vacuum baffle valve and the gas-water separation filter, and between the gas-water separation filter and the vacuumizing device,
more preferably, a pipeline sealing O-ring is sleeved outside the position of the connection in each vacuum clamp.
Detect adsorption equipment's beneficial effect as follows:
the utility model discloses a semiconductor carborundum substrate jumbo size microtubule detects and judges in advance provides a new installation, and the device need not use the microscope to detect, has the advantage that detection efficiency is high, still can detect the existence condition of defects such as jumbo size microtubule simultaneously, is applicable to extensive industrialization defect detection.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the application and together with the description serve to explain the application and not to limit the application. In the drawings:
FIG. 1 is a perspective view of a large-sized micro-tube detection adsorption device in a semiconductor silicon carbide substrate.
FIG. 2 is a side view of the vacuum chuck at the nozzle of the tee in the apparatus of FIG. 1.
Fig. 3 is an enlarged sectional view of a portion of circle i shown in fig. 2.
Fig. 4 is an enlarged sectional view of a portion indicated by circle ii in fig. 2.
Fig. 5 is a top view of a vacuum chuck.
Fig. 6a is a longitudinal sectional view of the vacuum chuck of fig. 5.
Fig. 6b is a schematic view of the lower structure of the vacuum chuck of fig. 5.
Wherein the reference numbers in the drawings are as follows:
the device comprises a vacuum sucker 1, a sucker seat 2, a three-way pipe 3, a first vacuum baffle valve 4, a second vacuum baffle valve 5, a gas-water separation filter 6, a vacuumizing device 7, a vacuum hoop 8, a semiconductor silicon carbide substrate to be tested 9, a pipeline sealing O ring 10, an elastic O ring 11, an annular groove 12, a groove 13, a groove 14, a through hole 15 and a groove wall 16.
Detailed Description
In order to more clearly explain the overall concept of the present application, the following detailed description is given by way of example in conjunction with the accompanying drawings.
Example 1 adsorption apparatus for detecting large-sized micropipe in semiconductor silicon carbide substrate
As shown in fig. 1, 5, 6a and 6b, the device for detecting and adsorbing large-size microtubes in a semiconductor silicon carbide substrate provided in this embodiment includes a sample adsorption unit, a vacuum-pumping device 7 (such as a vacuum pump), and a vacuum pipeline communicating the sample adsorption unit and the vacuum-pumping device 7;
the sample adsorption unit comprises a vacuum chuck 1, a semiconductor silicon carbide substrate adsorption area is arranged at the top of the vacuum chuck 1, a plurality of concentric annular grooves 12 (shown in fig. 3 and 5 as 14 circular grooves except the center) with upward openings are distributed in the adsorption area, annular grooves with other shapes, such as square grooves, can be arranged according to the shape of the semiconductor silicon carbide substrate, a through hole 15 which is through in the vertical direction is arranged at the bottom of the vacuum chuck 1, the upper opening of the through hole 15 is positioned at the center of the annular groove 12, and the lower opening of the through hole 15 is communicated with a vacuum pipeline;
the annular grooves 12 with upward openings are communicated through four grooves 14 which are uniformly distributed and radially extend to the upper opening of the through hole 15;
the heights of the groove walls 16 of the plurality of annular grooves 12 are the same, and the longitudinal section of the groove wall 16 of each annular groove 12 is flat at the top and vertical at the side (shown in fig. 6);
the annular grooves 12 are made of non-deformable metal aluminum alloy.
As shown in fig. 1, a three-way pipe 3 is arranged below the through hole 15, the three-way pipe 3 comprises an upper pipe orifice, a left pipe orifice and a right pipe orifice, the upper pipe orifice is communicated with the lower part of the through hole 15, the left pipe orifice is communicated with the vacuum pipeline through a first vacuum baffle valve 4, and the right pipe orifice is communicated with the atmosphere through a second vacuum baffle valve 5; and a gas-water separation filter 6 is arranged on a pipeline communicated with the vacuum pipeline and the first vacuum baffle valve 4.
As shown in fig. 2 and 3, a suction cup seat 2 is arranged at the lower part of the through hole 15, the suction cup seat 2 is sleeved outside the lower opening of the through hole 15, a groove 13 with an upward opening is arranged on the periphery of the upper part of the suction cup seat 2, an elastic O ring 11 is arranged in the groove 13, and the lower surface of the vacuum suction cup 1 is connected with the upper part of the suction cup seat 2 through the elastic O ring 11; the lower part of the sucker seat 2 is communicated with an upper pipe orifice of the three-way pipe 3;
as shown in fig. 1, the lower part of the suction cup seat 2 is connected with the upper pipe orifice of the three-way pipe 3, the first vacuum baffle valve 4 is connected with the left pipe orifice of the three-way pipe 3, the second vacuum baffle valve 5 is connected with the right pipe orifice of the three-way pipe 3, the first vacuum baffle valve 4 is connected with the gas-water separation filter 6, and the gas-water separation filter 6 is connected with the vacuum pumping device 7 through vacuum clamps 8 (specifically KF vacuum clamps);
as shown in fig. 2 and 4, a line sealing O-ring 10 is provided around each of the vacuum clamps 8 at the location of the connection.
The application method of the detection adsorption device provided by the embodiment is as follows:
selecting a vacuum chuck 1 corresponding to the diameter of the semiconductor silicon carbide substrate 9 to be detected, horizontally placing the semiconductor silicon carbide substrate 9 to be detected on the plurality of annular grooves 12 on the upper surface, namely the top, of the vacuum chuck 1, uniformly coating detection liquid on the upper surface of the semiconductor silicon carbide substrate 9 to be detected, starting a vacuumizing device 7, starting detection, closing a second vacuum baffle valve 5 at the moment, opening a first vacuum baffle valve 4, and enabling negative pressure generated by the vacuumizing device 7 to reach the lower part and the lower surface of the semiconductor silicon carbide substrate 9 to be detected through the first vacuum baffle valve 4, a three-way pipe 3 and a chuck seat 2 so as to generate negative pressure between the semiconductor silicon carbide substrate 9 to be detected and the upper surface of the vacuum chuck 1. If the semiconductor silicon carbide substrate 9 to be detected has a micropipe defect with a certain size, the detection liquid can reach the lower surface of the semiconductor silicon carbide substrate 9 to be detected or the groove wall and the groove bottom of the annular groove 12 through the defect under the action of negative pressure, whether the semiconductor silicon carbide substrate 9 to be detected has the micropipe with the large size or not is judged according to whether the detection liquid which penetrates through the lower surface of the semiconductor silicon carbide substrate 9 to be detected or the groove wall and the groove bottom of the annular groove 12 or not, and whether the photoresist can penetrate into the back surface of the semiconductor silicon carbide substrate along the micropipe in the semiconductor silicon carbide substrate to be detected in the photoetching stage after the epitaxy is further predicted.
After the detection is finished, the first vacuum baffle valve 4 is closed, meanwhile, the second vacuum baffle valve 5 is opened, the atmosphere reaches the upper surface of the vacuum chuck 1 through the second vacuum baffle valve 5, so that no negative pressure is generated between the semiconductor silicon carbide substrate 9 to be detected and the upper surface of the vacuum chuck 1, and the semiconductor silicon carbide substrate 9 to be detected is taken down.
Those not described in detail in this specification are within the skill of the art. The above description is only an example of the present application and is not intended to limit the present application. Various modifications and changes may occur to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the scope of the claims of the present application.
Claims (10)
1. A large-size micropipe detects adsorption equipment in semiconductor carborundum substrate which characterized in that: it includes: the device comprises a sample adsorption unit, a vacuumizing device, a vacuum pipeline for communicating the sample adsorption unit with the vacuumizing device, and a motor for providing power for the vacuumizing device;
the sample adsorbs the unit and includes vacuum chuck, semiconductor silicon carbide substrate adsorption area is established at vacuum chuck's top, semiconductor silicon carbide substrate adsorption area establishes a plurality of openings ring channel up, vacuum chuck still is equipped with at least one intercommunication semiconductor silicon carbide substrate adsorption area with the through-hole of vacuum pipeline.
2. The apparatus for detecting and adsorbing micropipes in a semiconductor silicon carbide substrate as claimed in claim 1, wherein: the annular grooves with the upward openings are concentric, the through holes are formed in the centers of the annular grooves with the upward openings, and the annular grooves with the upward openings are communicated through at least one groove which radially extends to the through holes.
3. The apparatus for detecting and adsorbing micropipes of large size in a semiconductor silicon carbide substrate as claimed in claim 1 or 2, wherein: the maximum diameter of the annular grooves with the upward openings is equal to the diameter of the semiconductor silicon carbide substrate to be detected or is smaller than the diameter of the semiconductor silicon carbide substrate to be detected by within 2 mm.
4. The apparatus for detecting and adsorbing micropipes of large size in a semiconductor silicon carbide substrate as claimed in claim 1 or 2, wherein: the heights of the groove walls of the annular grooves with upward openings are the same;
and/or the longitudinal section of the groove wall of each annular groove is flat at the top and vertical at the side edge, or sharp at the top and inclined outwards at the side edge.
5. The apparatus for detecting and adsorbing micropipes of large size in a semiconductor silicon carbide substrate as claimed in claim 1 or 2, wherein: the annular grooves with the upward openings are made of non-deformable metal stainless steel, aluminum alloy or titanium alloy.
6. The apparatus for detecting and adsorbing micropipes of large size in a semiconductor silicon carbide substrate as claimed in claim 1 or 2, wherein: and a three-way pipe is arranged below the through hole and comprises an upper pipe orifice, a left pipe orifice and a right pipe orifice, the upper pipe orifice is communicated with the lower part of the through hole, the left pipe orifice is communicated with the vacuum pipeline through a first vacuum baffle valve, and the right pipe orifice is communicated with the atmosphere through a second vacuum baffle valve.
7. The apparatus for detecting and adsorbing micropipes in a semiconductor silicon carbide substrate as claimed in claim 6, wherein: and a gas-water separation filter is arranged on a pipeline communicated with the vacuum pipeline through the first vacuum baffle valve.
8. The apparatus for detecting and adsorbing micropipes in a semiconductor silicon carbide substrate as claimed in claim 7, wherein: the lower part of the through hole is provided with a sucker seat, the sucker seat is sleeved outside the through hole, the periphery of the upper part of the sucker seat is provided with a groove with an upward opening, an elastic O ring is arranged in the groove, and the lower surface of the vacuum sucker is connected with the upper part of the sucker seat through the elastic O ring; the lower part of the sucker seat is communicated with an upper pipe opening of the three-way pipe.
9. The apparatus for detecting and adsorbing micropipes in a semiconductor silicon carbide substrate as claimed in claim 8, wherein: the vacuum clamping hoops are connected between the lower part of the sucker seat and an upper pipe opening of the three-way pipe, between the first vacuum baffle valve and a left pipe opening of the three-way pipe, between the second vacuum baffle valve and a right pipe opening of the three-way pipe, between the first vacuum baffle valve and the gas-water separation filter and between the gas-water separation filter and the vacuumizing device.
10. The apparatus for detecting and adsorbing micropipes in a semiconductor silicon carbide substrate as claimed in claim 9, wherein: and a pipeline sealing O ring is sleeved outside the connecting position in each vacuum hoop.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920828818.0U CN210560880U (en) | 2019-06-03 | 2019-06-03 | Large-size micro-tube detection adsorption device in semiconductor silicon carbide substrate |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201920828818.0U CN210560880U (en) | 2019-06-03 | 2019-06-03 | Large-size micro-tube detection adsorption device in semiconductor silicon carbide substrate |
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| CN210560880U true CN210560880U (en) | 2020-05-19 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114755177A (en) * | 2022-03-30 | 2022-07-15 | 贵州倍易通科技有限公司 | Defect detection device is used in processing of cell-phone LCD screen |
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2019
- 2019-06-03 CN CN201920828818.0U patent/CN210560880U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114755177A (en) * | 2022-03-30 | 2022-07-15 | 贵州倍易通科技有限公司 | Defect detection device is used in processing of cell-phone LCD screen |
| CN114755177B (en) * | 2022-03-30 | 2023-01-06 | 贵州倍易通科技有限公司 | Defect detection device is used in processing of cell-phone LCD screen |
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Address after: No.99, Tianyue South Road, Huaiyin District, Jinan City, Shandong Province Patentee after: Shandong Tianyue advanced technology Co., Ltd Address before: 250100 AB Block 1106-6-01, Century Fortune Center, West Side of Xinyu Road, Jinan High-tech Zone, Shandong Province Patentee before: Shandong Tianyue Advanced Materials Technology Co.,Ltd. |