CN210885649U - Boron removal ultrapure water system for IC semiconductor industry - Google Patents
Boron removal ultrapure water system for IC semiconductor industry Download PDFInfo
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- CN210885649U CN210885649U CN201920485948.9U CN201920485948U CN210885649U CN 210885649 U CN210885649 U CN 210885649U CN 201920485948 U CN201920485948 U CN 201920485948U CN 210885649 U CN210885649 U CN 210885649U
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Abstract
The utility model discloses a boron-removing ultrapure water system for the IC semiconductor industry, which adopts a raw water heating plate type heat exchanger to ensure that the water temperature is not lower than 10 ℃ in winter so as to improve the water quality; two sets of boron-removing resin mixed beds which are connected in parallel are adopted, one is used for the next, and can be switched at any time, so that the stability is improved, and the water quality is further optimized; the device is provided with a plurality of sets of UV sterilizers, can effectively remove Total Organic Carbon (TOC), and is configured with an online TOC tester. In this way, the utility model discloses can the while output remove boron ultrapure water and conventional ultrapure water, and whole process is whole realizes automated control, and is efficient, and the operation is reliable and stable, and quality of water is pure stable, economical and practical, easy operation, excellent in use effect.
Description
Technical Field
The utility model relates to a chemical industry field especially relates to an IC semiconductor trade is with removing boron ultrapure water system.
Background
Currently, the importance of water treatment is constantly increasing, in particular in the field of obtaining drinking water, and in the production of high-purity process water, where higher demands are made regarding the purity of the water, in particular in the case of producing high-purity process water, such as: in the case of process water for semiconductor production.
During semiconductor manufacturing, water of even higher purity is required for rinsing the silicon wafer, especially after the etching process. While the starting point for producing the desired high purity water is surface water, such as river water, or ground water (e.g., well water), which needs to be purified through a multi-stage treatment process, including: a pretreatment section, a replenishment section, and a polishing section.
At present, the pretreatment generally comprises one or more filtration steps for removing coarse and fine particles, and finally a flocculation step for removing tramp material and very fine dust particles, an adsorption step (usually using activated carbon), a softening step and/or a step for removing minerals from the raw water using ion exchange resins and/or reverse osmosis membranes. In the replenishment section, the treated water is degassed, deionized, and treated with UV. In the polishing section, further UV treatment was performed. In addition, polishing generally comprises a further deionization process, and at least one ultrafiltration step.
The raw water to be treated generally contains inorganic and organic constituents or impurities which must be removed as much as possible during the treatment. The constituents and impurities referred to herein are mainly organically bound carbon (total organic carbon, TOC), silica and boron.
Boron is typically removed as boric acid in the prior art by using strongly basic anion exchangers. However, the adsorption force of existing boron exchangers is generally low, which results in a low removal capacity and a very early penetration (elution) of boron. And when the strongly basic anion exchanger is exhausted, boron will penetrate as a first impurity. In other words, for example, when the penetration and elution of silica are respectively detected at the outlet of the strongly basic anion exchanger, it is usually the case that boron has already been eluted to at least some extent. Therefore, a boron-removing ultrapure water system which can meet the product requirements of semiconductor production enterprises is urgently needed.
SUMMERY OF THE UTILITY MODEL
The utility model discloses the main technical problem who solves is: the boron removal ultrapure water system for the IC semiconductor industry can simultaneously produce boron removal ultrapure water and conventional ultrapure water, the whole process is automatically controlled, the efficiency is high, the operation is stable and reliable, the water quality is pure and stable, the system is economical and practical, the operation is simple, and the using effect is good.
In order to solve the technical problem, the utility model discloses a technical scheme be: provided is a boron removal ultrapure water system for IC semiconductor industry, comprising: the device comprises a raw water tank, a raw water pump, a primary filter, a plate heat exchanger, a first UV sterilizer, an UF membrane system, an ultrafiltration water tank, a backwash water pump, a filtration water pump, a primary filter, a primary high-pressure pump, a primary RO system, a PH regulation system, a secondary RO high-pressure pump, a secondary RO system, a secondary RO water tank, an EDI water supply pump, a secondary filter, an EDI system, a secondary UV sterilizer, a primary polishing mixed bed, a pure water tank, a pure water delivery pump, a third UV sterilizer, an online TOC tester, and a first secondary polishing mixed bed, a third filter, a fourth filter, an ultrapure water point and a boron-removing resin polishing mixed bed, a third filter, a second secondary polishing mixed bed, a third filter, a fourth filter and a boron-removing ultrapure water point which are sequentially connected in series, wherein the primary polishing mixed bed is composed of two boron-removing polishing mixed beds connected in parallel.
In a preferred embodiment of the present invention, the total water inflow of the boron-removing ultrapure water system for the IC semiconductor industry is more than or equal to 10.5 tons/hour.
In a preferred embodiment of the present invention, the water inlet pressure of the boron-removing ultrapure water system for the IC semiconductor industry is not less than 0.3 MPa.
In a preferred embodiment of the present invention, the amount of the effluent of the EDI system is not less than 5 tons/hour.
In a preferred embodiment of the present invention, the ultrapure water point is a 3 ton/hr ultrapure water point, and the boron removal ultrapure water point is a 2 ton/hr boron removal ultrapure water point.
In a preferred embodiment of the present invention, the operating temperature of the boron-removing ultrapure water system for the IC semiconductor industry is 10 ℃ -45 ℃.
In a preferred embodiment of the present invention, the boron content of the ultrapure water from the ultrapure water point and the boron-removed ultrapure water from the boron-removal ultrapure water point is less than or equal to 20PPT, and the metal ion content is less than or equal to 20 PPT.
In a preferred embodiment of the present invention, the resistivity of the outlet water of the boron-removing ultrapure water system for the IC semiconductor industry is more than or equal to 18.08M Ω -cm.
In a preferred embodiment of the present invention, the UF membrane system includes a sodium hydroxide dosing system, a hydrochloric acid dosing system, a sodium hypochlorite dosing system, a sodium sulfite dosing system, and a scale inhibitor dosing system.
In a preferred embodiment of the present invention, the primary filter is a 100 μm primary filter, the primary filter is a 5.0 μm filter, the secondary filter is a 1.0 μm filter, the tertiary filter is a 0.22 μm filter, and the quaternary filter is a 0.045 μm filter.
The utility model has the advantages that:
(1) the device is suitable for a common boron-removing ultrapure water device of 5-20 tons/hour in the semiconductor industry;
(2) the arrangement of a set of raw water heating plate type heat exchanger can ensure that the water temperature is not lower than 10 ℃ in winter so as to improve the water quality;
(3) two sets of boron-removing resin mixed beds which are connected in parallel are arranged, one is used for standby, and can be switched at any time, so that the stability is improved, and the water quality is further optimized;
(4) a plurality of sets of UV sterilizers are arranged, so that total organic carbon TOC can be effectively removed, and an online TOC tester is configured;
(5) the boron ion content after boron removal is PPT level (other ions are equal to or less than 20 PPT)
(6) The terminal water quality reaches ultra-pure high resistivity (the resistivity is not lower than 18 megaohm centimeters);
(7) high economical efficiency and automation device, and stable and reliable operation.
Drawings
FIG. 1 is a schematic diagram of a boron-removing ultrapure water system for the IC semiconductor industry of the present invention;
the parts in the drawings are numbered as follows: 1. raw water tank, 2, raw water pump, 3, primary filter, 4, plate heat exchanger, 5, first UV sterilizer, 6, sodium hydroxide dosing system, 7, hydrochloric acid dosing system, 8, sodium hypochlorite dosing system, 9, ultrafiltration water tank, 10, backwash water pump, 11, filtration water pump, 12, sodium sulfite dosing system, 13, scale inhibitor dosing system, 14, primary filter, 15, primary high pressure pump, 16, primary RO system, 17, PH regulation system, 18, secondary RO high pressure pump, 19, secondary RO system, 20, secondary RO water tank, 21, EDI water supply pump, 22, secondary filter, 23, EDI system, 24, second UV sterilizer, 25, primary polishing mixed bed, 26, pure water tank, 27, pure water delivery pump, 28, third UV sterilizer, 30, first secondary polishing mixed bed, 31, tertiary filter, 32, quaternary filter, 33. 34, removing boron resin polishing mixed bed, 35, second-stage polishing mixed bed, 36, removing boron ultra-pure water point.
Detailed Description
The following detailed description of the preferred embodiments of the present invention will be provided in conjunction with the accompanying drawings, so as to enable those skilled in the art to more easily understand the advantages and features of the present invention, and thereby define the scope of the invention more clearly and clearly.
Referring to fig. 1, an embodiment of the present invention includes:
a boron-removing ultrapure water system for the IC semiconductor industry, comprising: a raw water tank 1, a raw water pump 2, a primary filter 3, a plate heat exchanger 4, a first UV sterilizer 5, a sodium hydroxide dosing system 6, a hydrochloric acid dosing system 7, a sodium hypochlorite dosing system 8, an ultrafiltration water tank 9, a backwash water pump 10, a filtration water pump 11, a sodium sulfite dosing system 12, a scale inhibitor dosing system 13, a primary filter 14, a primary high-pressure pump 15, a primary RO system 16, a PH adjusting system 17, a secondary RO high-pressure pump 18, a secondary RO system 19, a secondary RO water tank 20, an EDI water supply pump 21, a secondary filter 22, an EDI system 23, a secondary UV sterilizer 24, a primary polishing mixed bed 25, a pure water tank 26, a pure water delivery pump 27, a third UV sterilizer 28, an online TOC tester, a first secondary polishing mixed bed 30, a fourth-stage filter 31, a third-stage filter 32, an ultra-pure water point 33, a boron removal resin polishing mixed bed 34, a third-grade UV sterilizer 28, an online TOC, The device comprises a third-stage filter 31, a second-stage polishing mixed bed 35, the third-stage filter 31, a fourth-stage filter 32 and a boron-removing ultrapure water point 36, wherein the first-stage polishing mixed bed 25 comprises two boron-removing polishing mixed beds connected in parallel.
The two first-stage polishing mixed beds 25, the first second-stage polishing mixed bed 30 and the second-stage polishing mixed bed 35 are all 50-liter boron-removing resin mixed beds, the two first-stage polishing mixed beds 25 are arranged in parallel, the first second-stage polishing mixed bed 30 and the second-stage polishing mixed bed 35 are arranged in parallel, one first-stage polishing mixed bed is used, the two first-stage polishing mixed beds can be switched at any time, and the stability is high; each set of polishing mixed bed has two tank bodies connected in series, is filled with domestic nuclear-grade resin (foreign material), and has the characteristics of uniform particles, small TOC precipitation coefficient, no need of regeneration after failure, direct replacement, capability of further optimizing water quality and the like.
A plurality of ultraviolet UV sterilizing lamps (a first UV sterilizer 5, a second UV sterilizer 24 and a third UV sterilizer 28) are adopted, so that a small amount of bacteria remained in water can be killed, and the bacteria index entering a use point and the total organic carbon TOC index meet the requirements; the ultraviolet wavelength is 254nm, and the irradiation intensity is 30000 μ ws/cm2The service life is longer than 8000 h, and the sterilization rate is high>99%。
The ultraviolet sterilization is characterized in that: the sterilizing capability is strong, the contact time is short, the equipment is simple, the operation and management are convenient, and the physical and chemical properties of water are not changed during treatment; the treated water is colorless, odorless, and nontoxic, and has no secondary pollution caused by introducing additives (such as chlorine).
The primary filter 3 is a 100 μm primary filter, the primary filter 14 is a 5.0 μm filter, the secondary filter 22 is a 1.0 μm filter, the tertiary filter 31 is a 0.22 μm filter, and the quaternary filter 32 is a 0.045 μm filter.
Taking the water yield of 5 tons/hour as an example:
(1) the total water inflow of the boron-removing ultrapure water system for the IC semiconductor industry is more than or equal to 10.5 tons/hour.
(2) The water inlet pressure of the boron-removing ultrapure water system for the IC semiconductor industry is more than or equal to 0.3 MPa.
(3) The water outlet quantity of the EDI system 23 is more than or equal to 5 tons/hour.
(4) The ultrapure water point 33 is a 3 ton/hour ultrapure water point, and the boron-removal ultrapure water point 36 is a 2 ton/hour boron-removal ultrapure water point. Continuous water production for 24 hours is realized.
(5) The heat carrier of the plate type heat exchanger 4 is low-pressure steam, raw water is heated by the plate type heat exchanger 4, the running temperature of the boron-removing ultrapure water system for the IC semiconductor industry can be maintained between 10 ℃ and 45 ℃, the water temperature is not lower than 10 ℃ in winter, so that the water quality is improved, the treatment capacity and efficiency of the whole system are improved, and the water quality is further optimized.
The water quality conditions were as follows:
(1) effluent quality of the primary RO system 16: less than or equal to 10 mu s/cm.
(2) Effluent quality of the secondary RO system 19: less than or equal to 5 mu s/cm.
(3) Effluent quality of the EDI system 23: not less than 15M omega cm
(4) The water outlet resistivity of the boron-removing ultrapure water system for the IC semiconductor industry is as follows: not less than 18.08M omega cm.
(5) The pressure requirement of terminal water: not less than 0.35 MPa.
(6) The boron content of the ultrapure water from the ultrapure water point 33 and the boron-removed ultrapure water from the boron-removal ultrapure water point 36 is less than or equal to 20PPT, and the metal ion content is less than or equal to 20 PPT.
The system is controlled in a fully automatic mode, adopts an imported Schneider electric appliance assembly and a domestic PLC (programmable logic controller), runs stably and reliably, is mainly used for producing boron-removing ultrapure water in the semiconductor industry, and is suitable for being used and referenced by related enterprises in the semiconductor industry, wherein the scale of the semiconductor industry is within 5-20 tons/hour, the boron-removing purity requirement is 20PPT (including other ion requirements), the resistivity of the ultrapure water is not lower than 18 megaohm centimeters, the total organic carbon TOC content is not higher than 20PPB, and the instrument automatic PLC master control is adopted.
The utility model discloses a IC semiconductor trade is with removing boron ultrapure water system, through reasonable structural design, can the output simultaneously remove boron ultrapure water and conventional ultrapure water, and whole process is whole to realize automated control, and is efficient, moves reliable and stable, and quality of water is pure stable, economical and practical, easy operation, excellent in use effect.
In the description of the present invention, it should be noted that the terms "upper", "lower", "left", "right", "inner", "outer", etc. indicate the position or positional relationship based on the position or positional relationship shown in the drawings, or the position or positional relationship that the products of the present invention are usually placed when used, and are only for convenience of description and simplification of the description, but do not indicate or imply that the device or element to which the term refers must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
The above only is the embodiment of the present invention, not limiting the patent scope of the present invention, all the equivalent structures or equivalent processes that are used in the specification and the attached drawings or directly or indirectly applied to other related technical fields are included in the patent protection scope of the present invention.
Claims (10)
1. A boron removal ultrapure water system for IC semiconductor industry, comprising: the device comprises a raw water tank, a raw water pump, a primary filter, a plate heat exchanger, a first UV sterilizer, an UF membrane system, an ultrafiltration water tank, a backwash water pump, a filtration water pump, a primary filter, a primary high-pressure pump, a primary RO system, a PH regulation system, a secondary RO high-pressure pump, a secondary RO system, a secondary RO water tank, an EDI water supply pump, a secondary filter, an EDI system, a secondary UV sterilizer, a primary polishing mixed bed, a pure water tank, a pure water delivery pump, a third UV sterilizer, an online TOC tester, and a first secondary polishing mixed bed, a third filter, a fourth filter, an ultrapure water point and a boron-removing resin polishing mixed bed, a third filter, a second secondary polishing mixed bed, a third filter, a fourth filter and a boron-removing ultrapure water point which are sequentially connected in series, wherein the primary polishing mixed bed is composed of two boron-removing polishing mixed beds connected in parallel.
2. The boron-removing ultrapure water system for the IC semiconductor industry as recited in claim 1 wherein the total water inflow of the boron-removing ultrapure water system for the IC semiconductor industry is not less than 10.5 tons/hour.
3. The boron-removing ultrapure water system for the IC semiconductor industry as recited in claim 1 wherein the water inlet pressure of the boron-removing ultrapure water system for the IC semiconductor industry is not less than 0.3 MPa.
4. The boron-removing ultrapure water system for the IC semiconductor industry as recited in claim 1 wherein the EDI system has an effluent volume of not less than 5 tons/hr.
5. The boron-removing ultrapure water system for the IC semiconductor industry according to claim 4, wherein the ultrapure water point is a 3 ton/hr ultrapure water point, and the boron-removing ultrapure water point is a 2 ton/hr boron-removing ultrapure water point.
6. The boron-removing ultrapure water system for the IC semiconductor industry as recited in claim 1 wherein the operating temperature of the boron-removing ultrapure water system for the IC semiconductor industry is from 10 ℃ to 45 ℃.
7. The boron-removing ultrapure water system for the IC semiconductor industry as recited in claim 1 wherein the ultrapure water from the ultrapure water point and the boron-removing ultrapure water from the boron-removing ultrapure water point have a boron content of 20PPT or less and a metal ion content of 20PPT or less.
8. The boron-removing ultrapure water system for the IC semiconductor industry as recited in claim 1 wherein the resistivity of the water exiting from the boron-removing ultrapure water system for the IC semiconductor industry is not less than 18.08M Ω -cm.
9. The boron-removing ultrapure water system for the IC semiconductor industry of claim 1 wherein the UF membrane system comprises a sodium hydroxide dosing system, a hydrochloric acid dosing system, a sodium hypochlorite dosing system, a sodium sulfite dosing system and a scale inhibitor dosing system.
10. The boron-removing ultrapure water system for the IC semiconductor industry according to claim 1, wherein the primary filter is a 100 μm primary filter, the primary filter is a 5.0 μm filter, the secondary filter is a 1.0 μm filter, the tertiary filter is a 0.22 μm filter, and the quaternary filter is a 0.045 μm filter.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201920485948.9U CN210885649U (en) | 2019-04-11 | 2019-04-11 | Boron removal ultrapure water system for IC semiconductor industry |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112110579A (en) * | 2020-10-09 | 2020-12-22 | 江苏中电创新环境科技有限公司 | RO + EDI high-efficient boron system that removes |
| CN114751539A (en) * | 2021-12-13 | 2022-07-15 | 上海源众环保科技有限公司 | Preparation process of ultrapure water for improving process stability and water quality |
-
2019
- 2019-04-11 CN CN201920485948.9U patent/CN210885649U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112110579A (en) * | 2020-10-09 | 2020-12-22 | 江苏中电创新环境科技有限公司 | RO + EDI high-efficient boron system that removes |
| CN114751539A (en) * | 2021-12-13 | 2022-07-15 | 上海源众环保科技有限公司 | Preparation process of ultrapure water for improving process stability and water quality |
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