CN210856411U - 碳化硅单晶生长装置 - Google Patents
碳化硅单晶生长装置 Download PDFInfo
- Publication number
- CN210856411U CN210856411U CN201921085672.1U CN201921085672U CN210856411U CN 210856411 U CN210856411 U CN 210856411U CN 201921085672 U CN201921085672 U CN 201921085672U CN 210856411 U CN210856411 U CN 210856411U
- Authority
- CN
- China
- Prior art keywords
- induction heating
- heating coil
- silicon carbide
- crucible
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201921085672.1U CN210856411U (zh) | 2019-07-11 | 2019-07-11 | 碳化硅单晶生长装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201921085672.1U CN210856411U (zh) | 2019-07-11 | 2019-07-11 | 碳化硅单晶生长装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN210856411U true CN210856411U (zh) | 2020-06-26 |
Family
ID=71300175
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201921085672.1U Active CN210856411U (zh) | 2019-07-11 | 2019-07-11 | 碳化硅单晶生长装置 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN210856411U (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112725886A (zh) * | 2020-12-18 | 2021-04-30 | 浙江博蓝特半导体科技股份有限公司 | 碳化硅晶体生长装置及其生长方法、碳化硅晶锭 |
-
2019
- 2019-07-11 CN CN201921085672.1U patent/CN210856411U/zh active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112725886A (zh) * | 2020-12-18 | 2021-04-30 | 浙江博蓝特半导体科技股份有限公司 | 碳化硅晶体生长装置及其生长方法、碳化硅晶锭 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN110359087B (zh) | 碳化硅单晶生长装置及制造碳化硅单晶的方法 | |
CN109196144B (zh) | 单晶硅的制造方法及装置 | |
US9068277B2 (en) | Apparatus for manufacturing single-crystal silicon carbide | |
JP6111873B2 (ja) | 炭化珪素単結晶インゴットの製造方法 | |
KR101816109B1 (ko) | 탄화규소 단결정 잉곳의 성장장치 및 그 성장방법 | |
KR101635693B1 (ko) | 단결정의 제조 장치에 사용되는 종결정 보유 지지축 및 단결정의 제조 방법 | |
JP6267303B2 (ja) | 結晶の製造方法 | |
CN102766901A (zh) | 实时可调温度梯度法生长大尺寸高温晶体的装置及方法 | |
KR100745599B1 (ko) | 실리콘 단결정의 제조 방법 | |
KR101353679B1 (ko) | 대구경 단결정 성장장치 및 이를 이용하는 성장방법 | |
KR101048831B1 (ko) | 단결정 제조용 흑연 히터 및 단결정 제조장치와 단결정 제조방법 | |
CN210856411U (zh) | 碳化硅单晶生长装置 | |
CN116180210A (zh) | 一种碳化硅晶体的制备方法及装置 | |
JP6015397B2 (ja) | 炭化珪素単結晶の製造方法及びその製造装置 | |
JP2014101246A (ja) | 単結晶製造装置、および単結晶の製造方法 | |
CN218989473U (zh) | 一种真空环境下多温区感应加热碳化硅单晶生长装置 | |
JP6190070B2 (ja) | 結晶の製造方法 | |
CN106048715A (zh) | 一种控制碳化硅单晶生长径向温度梯度的装置及方法 | |
JP2006096578A (ja) | 炭化珪素単結晶の製造方法及び炭化珪素単結晶インゴット | |
JP4053125B2 (ja) | SiC単結晶の合成方法 | |
JP6279930B2 (ja) | 結晶製造装置および結晶の製造方法 | |
JPH05319996A (ja) | 炭化ケイ素単結晶成長装置 | |
KR20210004642A (ko) | 단결정 성장 장치 및 이를 이용한 단결정 성장 방법 | |
JP2016169126A (ja) | 結晶の製造方法 | |
JPH05139878A (ja) | 単結晶の育成装置及び育成方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20220418 Address after: 321000 plant 3, No. 2688, south 2nd Ring West Road, qiubin street, Wucheng District, Jinhua City, Zhejiang Province (self declaration) Patentee after: Zhejiang Fuxin Microelectronics Technology Co.,Ltd. Address before: 321000 South Second Ring West Road, Jinhua, Zhejiang Province, No. 2688 Patentee before: ZHEJIANG BOLANTE SEMICONDUCTOR TECHNOLOGY Co.,Ltd. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20230529 Address after: 321000 south side of Building 1, No. 2688, south 2nd Ring West Road, qiubin street, Wucheng District, Jinhua City, Zhejiang Province Patentee after: Jinhua Bolante New Material Co.,Ltd. Address before: 321000 plant 3, No. 2688, south 2nd Ring West Road, qiubin street, Wucheng District, Jinhua City, Zhejiang Province (self declaration) Patentee before: Zhejiang Fuxin Microelectronics Technology Co.,Ltd. |
|
TR01 | Transfer of patent right |