CN210796694U - One-furnace multi-time doping device of monocrystalline silicon growth furnace - Google Patents
One-furnace multi-time doping device of monocrystalline silicon growth furnace Download PDFInfo
- Publication number
- CN210796694U CN210796694U CN201921029858.5U CN201921029858U CN210796694U CN 210796694 U CN210796694 U CN 210796694U CN 201921029858 U CN201921029858 U CN 201921029858U CN 210796694 U CN210796694 U CN 210796694U
- Authority
- CN
- China
- Prior art keywords
- doping
- cylinder
- sealing cover
- rotating shaft
- baffle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn - After Issue
Links
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 14
- 238000007789 sealing Methods 0.000 claims abstract description 25
- 230000007246 mechanism Effects 0.000 claims abstract description 16
- 239000010453 quartz Substances 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 239000013078 crystal Substances 0.000 abstract description 7
- 230000007547 defect Effects 0.000 abstract description 3
- 239000002019 doping agent Substances 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 8
- 230000006872 improvement Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000005284 excitation Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model relates to a monocrystalline silicon growth furnace field, in particular to a doping device for a monocrystalline silicon growth furnace for a plurality of times. Comprises a doping cylinder; the doping mechanism comprises an outer barrel, the inner wall of the outer barrel is in an N-edge shape, each edge of N-1 edges is provided with a shaft seat, and each shaft seat is provided with a mandrel; the bottom wall of the doping cylinder is provided with an eccentric hole, and the mandrel is arranged in the eccentric hole; a sealing cover is arranged at the inner top of the outer cylinder, a rotating shaft handle is connected with the sealing cover through a bearing and a sealing ring, a plurality of stopping holes are formed in the sealing cover, and the positions of the stopping holes correspond to those of the doping cylinder; the lower end of the rotating shaft handle penetrates through the sealing cover to be fixedly connected with the baffle, the upper end of the rotating shaft handle is connected with the positioning stop pin, the bottom end of the stop pin is inserted into one of the positioning holes, and the baffle is provided with a notch. The utility model adopts the multiple doping technology, ensures that the doping elements are uniformly distributed in the crystal bar, improves the quality of the crystal bar and improves the income; can solve the original defect that only one part of dopant can be doped at one time.
Description
Technical Field
The utility model relates to a monocrystalline silicon growth furnace field, in particular to a doping device for a monocrystalline silicon growth furnace for a plurality of times.
Background
A monocrystalline silicon growing furnace is a device for producing a monocrystalline silicon rod by using a Czochralski method. The principle is as follows: the raw material silicon is melted by a graphite heater, and a single crystal silicon rod with a certain specification is pulled out by a seed crystal through a series of processes (seeding, shouldering, shoulder rotating, equal diameter, ending and the like). With the continuous improvement of the quality requirement of monocrystalline silicon in the market, doped semiconductors are produced at the same time, and compared with pure semiconductors, the doped semiconductors have better electrical properties. The pure semiconductor is characterized in that the conduction of carriers is generated by intrinsic excitation, generally, the number of the carriers is small, and the pure semiconductor is easily influenced by external factors. The doping of trivalent or pentavalent elements can generate other carriers outside intrinsic excitation, such as doping of aluminum, phosphorus, arsenic and the like, to form a P-type or N-type semiconductor, so that the conductivity of the intrinsic semiconductor can be greatly improved by doping a small amount of trivalent or pentavalent elements.
The existing doping device is a long cylinder, one end of the long cylinder can be fixed on a furnace body, a spoon extends out of the end of the long cylinder and is used for containing doping materials, and a handle is arranged on the cylinder body and can drive the spoon to stretch and rotate. The doping mode is one-time doping in one furnace, the doping material is directly poured into the silicon liquid, and due to the fact that the temperature of the silicon liquid is high, the material is volatilized fast, doping materials are distributed unevenly in a crystal bar, and the quality of a semiconductor crystal bar is low.
SUMMERY OF THE UTILITY MODEL
The main purpose of the utility model is to overcome the defects of the prior art and provide a single-furnace multiple doping device of a monocrystalline silicon growth furnace.
In order to solve the technical problem, the utility model discloses a solution is:
the utility model provides a single-furnace multi-time doping device of a monocrystalline silicon growth furnace, which comprises a doping cylinder; the device also comprises a doping mechanism and a quartz cylinder;
the doping mechanism comprises an outer barrel, the inner wall of the outer barrel is in an N-edge shape, each edge of N-1 edges is provided with a shaft seat, and each shaft seat is provided with a mandrel; the bottom wall of the doping cylinder is provided with an eccentric hole, and the mandrel is arranged in the eccentric hole;
a sealing cover is arranged at the inner top of the outer cylinder, a rotating shaft handle is connected with the sealing cover through a bearing and a sealing ring, a plurality of stopping holes are formed in the sealing cover, and the positions of the stopping holes correspond to those of the doping cylinder; the lower end of the rotating shaft handle penetrates through the sealing cover to be fixedly connected with the baffle, the upper end of the rotating shaft handle is connected with the positioning stop pin, the bottom end of the stop pin is inserted into one of the positioning holes, and the baffle is provided with a notch;
the quartz cylinder is connected with the lower end of the outer cylinder through a connecting flange.
As an improvement, the outer part of the quartz cylinder is sleeved with a corrugated pipe.
As an improvement, sealing devices are arranged among all parts in the doping mechanism.
As an improvement, a connecting section is also arranged between the connecting flange and the outer cylinder.
As an improvement, the upper sealing surface and the lower sealing surface of the connecting section have an angle.
As an improvement, the lifting mechanism comprises a lower bottom plate and a back plate; a linear motion unit is vertically arranged on the back plate, and a lifting frame is arranged on a sliding block of the linear motion unit; the lower bottom plate is provided with a round hole; the lower end of the quartz cylinder penetrates through the round hole of the lower bottom plate, and the outer edge of the lower end face of the connecting flange is connected with the lifting frame.
The doping cylinder has the size that the inner diameter D is 25mm, the inner depth L is 25mm, and the volume is as follows:
V＝πR2·L＝π×12.52×25＝12272mm2
compared with the prior art, the beneficial effects of the utility model are that:
the utility model adopts the multiple doping technology, ensures that the doping elements are uniformly distributed in the crystal bar, improves the quality of the crystal bar and improves the income; the defect that only one part of dopant can be doped at one time in the prior art can be solved; the lifting control is completely integrated on the operation interface, manual operation is not needed, manpower is saved, and cost is saved.
Drawings
Fig. 1 is a schematic structural diagram of the present invention.
Fig. 2 is a schematic structural diagram of a doping mechanism according to the present invention.
Fig. 3 is a schematic structural diagram of a doping cartridge according to the present invention.
The reference numbers in the figures are: 1-lower bottom plate, 2-back plate, 3-lifting frame, 4-linear motion unit, 5-rotating shaft handle, 6-positioning stop pin, 7-sealing cover, 8-baffle, 9-outer cylinder, 10-connecting section, 11-connecting flange, 12-corrugated pipe, 13-quartz cylinder, 14-mandrel, 15-doping cylinder and 16-shaft seat.
Detailed Description
The invention will be described in further detail with reference to the following detailed description and accompanying drawings:
as shown in fig. 1, a single-furnace multi-doping apparatus of a single-crystal silicon growth furnace comprises a doping cylinder 15; also comprises a lifting mechanism and a doping mechanism.
The lifting mechanism comprises a lower bottom plate 1 and a back plate 2. The backboard 2 is vertically provided with a linear motion unit 4, and a sliding block of the linear motion unit 4 is provided with a lifting frame 3. The lower bottom plate 1 is provided with a round hole.
As shown in fig. 2, the doping means comprises an outer cylinder 9. The inner ring of the outer cylinder is N-shaped. Wherein, each edge of the N-1 edge is provided with an axle seat 16, the spare edge is an initial position, and each axle seat 16 is provided with a mandrel 14. As shown in FIG. 3, an eccentric hole is formed on the bottom wall of the doping cartridge 15, and the mandrel 14 is installed in the eccentric hole. The top of 9 in the urceolus is equipped with closing cap 7, and pivot handle 5 links to each other with closing cap 7 through bearing and sealing washer, and 5 lower extremes of pivot handle pass closing cap 7 and link firmly with baffle 8, and 5 upper ends of pivot handle link to each other with location stop pin 6. The baffle 8 is arranged in the outer cylinder 9 and used for abutting against the doping cylinder 15, and a gap is further formed in the baffle 8. Sealing devices are arranged among all the components on the outer cylinder. The sealing cover 7 is provided with a plurality of stop holes, and the positions of the stop holes correspond to the doping cylinder 15. The positioning stop pin 6 is inserted into one of the stop holes.
The lower end of the outer cylinder 9 is connected with a quartz cylinder 13 through a connecting flange 11, the lower end of the quartz cylinder 13 penetrates through a round hole of the lower bottom plate 1, the lower end of the quartz cylinder 13 is connected with a material receiving cylinder, and a corrugated pipe 12 is sleeved outside the quartz cylinder 13. The upper end of the connecting flange 11 is connected with the outer cylinder 9 through a connecting section 10, and the outer edge of the lower end surface is connected with the lifting frame 3. The upper and lower sealing surfaces of the connecting section 10 are angled.
The utility model discloses a use does: the mandrel 14, the doping cylinder 15 and the shaft seat 16 are firstly installed together and then installed on the outer cylinder 9. When the device is used, materials are filled in the doping cylinder 15 in advance, the doping cylinder 15 can topple downwards, the doping cylinder 15 needs to be propped by the baffle 8 after the materials are filled, the materials cannot topple downwards, the baffle 8 needs to prop against the doping cylinder 15 during installation, the notch faces to the side where the doping cylinder 15 is not installed, the initial position is the initial position, the positioning stop pin 6 only needs to be lifted when the materials are needed to be doped later, the rotating shaft handle 5 rotates for an angle, the positioning stop pin 6 falls into the next positioning hole, each positioning hole corresponds to one doping cylinder 15, the baffle 8 is fixed on the rotating shaft handle 5, the baffle 8 rotates for the same angle along with the rotating shaft handle 5, at the moment, the baffle notch 8 faces to one of the doping cylinders 15, and the doping cylinder 15 cannot be supported by the baffle 8, so that the opening can topple downwards under the action of gravity. Then the same operation is carried out to complete multiple times of doping in sequence;
when each time of doping is finished, the lifting mechanism needs to move upwards, and the quartz cylinder 13 is far away from the material receiving cylinder, so that the material is prevented from volatilizing and entering a doping device, and the waste of the material is avoided; when doping is needed, the lifting mechanism moves downwards, the quartz cylinder 13 is close to the material receiving cylinder, and then the rotating shaft handle 5 is rotated to dump the raw materials to finish primary doping; after a furnace is doped for a plurality of times, the furnace needs to be recharged when being disassembled.
Finally, it should be noted that the above-mentioned embodiments illustrate only specific embodiments of the invention. Obviously, the present invention is not limited to the above embodiments, and many variations are possible. All modifications which can be derived or suggested by a person skilled in the art from the disclosure of the invention should be considered as within the scope of the invention.
Claims (6)
1. A single-furnace multi-time doping device of a monocrystalline silicon growth furnace comprises a doping cylinder; the device is characterized by also comprising a doping mechanism and a quartz cylinder;
the doping mechanism comprises an outer barrel, the inner wall of the outer barrel is in an N-edge shape, each edge of N-1 edges is provided with a shaft seat, and each shaft seat is provided with a mandrel; the bottom wall of the doping cylinder is provided with an eccentric hole, and the mandrel is arranged in the eccentric hole;
a sealing cover is arranged at the inner top of the outer cylinder, a rotating shaft handle is connected with the sealing cover through a bearing and a sealing ring, a plurality of stopping holes are formed in the sealing cover, and the positions of the stopping holes correspond to those of the doping cylinder; the lower end of the rotating shaft handle penetrates through the sealing cover to be fixedly connected with the baffle, the upper end of the rotating shaft handle is connected with the positioning stop pin, the bottom end of the stop pin is inserted into one of the positioning holes, and the baffle is provided with a notch;
the quartz cylinder is connected with the lower end of the outer cylinder through a connecting flange.
2. The apparatus of claim 1, wherein the quartz cylinder is externally jacketed with a bellows.
3. The apparatus of claim 1, wherein a sealing device is disposed between each component of the doping mechanism.
4. The device of claim 1, wherein a connecting section is further provided between the connecting flange and the outer cylinder.
5. The device of claim 4, wherein the upper and lower sealing surfaces of the connecting section are angled.
6. The apparatus of claim 1, further comprising a lifting mechanism, the lifting mechanism comprising a lower base plate and a back plate; a linear motion unit is vertically arranged on the back plate, and a lifting frame is arranged on a sliding block of the linear motion unit; the lower bottom plate is provided with a round hole; the lower end of the quartz cylinder penetrates through the round hole of the lower bottom plate, and the outer edge of the lower end face of the connecting flange is connected with the lifting frame.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921029858.5U CN210796694U (en) | 2019-07-04 | 2019-07-04 | One-furnace multi-time doping device of monocrystalline silicon growth furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921029858.5U CN210796694U (en) | 2019-07-04 | 2019-07-04 | One-furnace multi-time doping device of monocrystalline silicon growth furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN210796694U true CN210796694U (en) | 2020-06-19 |
Family
ID=71241470
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201921029858.5U Withdrawn - After Issue CN210796694U (en) | 2019-07-04 | 2019-07-04 | One-furnace multi-time doping device of monocrystalline silicon growth furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN210796694U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110331436A (en) * | 2019-07-04 | 2019-10-15 | 浙江晶盛机电股份有限公司 | A kind of multiple doper of one furnace of monocrystalline silicon growing furnace |
-
2019
- 2019-07-04 CN CN201921029858.5U patent/CN210796694U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110331436A (en) * | 2019-07-04 | 2019-10-15 | 浙江晶盛机电股份有限公司 | A kind of multiple doper of one furnace of monocrystalline silicon growing furnace |
| CN110331436B (en) * | 2019-07-04 | 2024-03-05 | 浙江晶盛机电股份有限公司 | Single crystal silicon growth furnace one-furnace multiple doping device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP2611952B1 (en) | Method of preparing a silicon single crystal doped with gallium, indium or aluminum | |
| CN208362524U (en) | A kind of automatic feeding device of single crystal growing furnace | |
| CN102409395B (en) | Gallium element doping device and method for Czochralski silicon | |
| CN210796694U (en) | One-furnace multi-time doping device of monocrystalline silicon growth furnace | |
| CN108103568A (en) | The automatic feeding device and its operating method of single crystal growing furnace | |
| CN210711818U (en) | Device for reducing GaAs crystal twin crystal based on VGF method | |
| US6648967B2 (en) | Crystal-pulling apparatus for pulling and growing a monocrystalline silicon ingot, and method therefor | |
| CN110331436B (en) | Single crystal silicon growth furnace one-furnace multiple doping device | |
| CN111101195A (en) | Crystal growth method of monocrystalline silicon crystal bar | |
| CN110318095A (en) | A kind of novel crystal grower and its growing method | |
| KR102014927B1 (en) | Silicon feeding unit, growing apparatus and method for silicon single srystal including the same | |
| JPH08295591A (en) | Doping device | |
| CN108977888A (en) | The manufacturing method of compound semiconductor wafer, photo-electric conversion element and Group III-V compound semiconductor monocrystalline | |
| JP2010222162A (en) | Doping agent supply device and apparatus for producing semiconductor single crystal | |
| CN1260402C (en) | Combined gas-phase pre-doping and neutron irradiation doping area fused silicon monocrystal production method | |
| CN113136619B (en) | Coaxial alignment device | |
| CN210856408U (en) | Crystal growth furnace provided with furnace body lifting mechanism | |
| CN202359229U (en) | Master-alloy doping and complementary-doping device | |
| KR101134499B1 (en) | Silicon single crystal ingot forming apparatus with double guider | |
| CN205907387U (en) | A doping device for in monocrystalline silicon production | |
| CN112941617B (en) | Doping device and doping method for heavily-doped antimony czochralski silicon | |
| CN218404502U (en) | Device for adding compound semiconductor material | |
| CN203639604U (en) | Flexible shaft lifting type single crystal furnace | |
| KR20200088045A (en) | Unit for supplying raw material and apparatus for growing silicon single crytal ingot including the same | |
| CN115058767B (en) | Doping method and device for preparing heavily-doped antimony monocrystal by MCZ (micro-channel chemical vapor deposition) method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20200619 Effective date of abandoning: 20240305 |
|
| AV01 | Patent right actively abandoned |
Granted publication date: 20200619 Effective date of abandoning: 20240305 |
|
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |