CN210779492U - Semiconductor laser stack array structure - Google Patents
Semiconductor laser stack array structure Download PDFInfo
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- CN210779492U CN210779492U CN201922095383.6U CN201922095383U CN210779492U CN 210779492 U CN210779492 U CN 210779492U CN 201922095383 U CN201922095383 U CN 201922095383U CN 210779492 U CN210779492 U CN 210779492U
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Abstract
The utility model provides a semiconductor laser stacked array structure, which comprises an anode block and a cathode block which are oppositely arranged, wherein a packaging space is formed between the anode block and the cathode block; the array laser is fixed in the packaging space, and a cooling liquid channel is arranged in the array laser; the positive pole piece is provided with a liquid inlet and a water return hole which are communicated with the cooling liquid channel, the negative pole piece is provided with a buffer hole which is communicated with the cooling liquid channel, and the buffer hole is a blind hole. According to the semiconductor laser stacked array structure, the buffer holes are formed in the negative electrode block corresponding to the cooling liquid channels, and the cooling liquid is subjected to collision energy loss at the bottom walls of the buffer holes, so that the water flow pressure is reduced, and the impact force of water flow on devices is greatly reduced; meanwhile, as the buffer hole is a blind hole, water flow can flow back when being impacted, and then flows to the liquid return hole through the cooling liquid channel and flows out, and the cooling liquid and the array laser generate heat exchange to dissipate heat and cool the array laser.
Description
Technical Field
The utility model belongs to the technical field of the laser instrument encapsulation, concretely relates to semiconductor laser folds battle array structure.
Background
The semiconductor laser stacked array is formed by vertically stacking semiconductor laser array chips and packaging the semiconductor laser array chips through a positioning structure and a fastening structure, wherein the semiconductor laser array chips are composed of a plurality of semiconductor laser light-emitting units, and the light-emitting units form array chips (Bar strips) on a chip which is not cleaved, so that the effect of high-power output is achieved. The packaging of the stack of semiconductor lasers is a very core technology at present. Among these factors, the timely and efficient dissipation of heat generated during operation of the laser stack and the precise positioning of the individual laser bars are particularly critical.
The packaging of the existing semiconductor laser stack mostly adopts water cooling for heat dissipation, and the output power of the laser stack can generally reach several kilowatts, but the conversion efficiency of the semiconductor laser is low, generally about 50%, which means that half of the power is dissipated in the form of heat, thus great requirements are provided for the heat dissipation capability. Therefore, in the heat dissipation process of the stacked array, the flow and the water pressure of cooling water are necessarily large, which has great influence on the stability and the normal operation of the whole stacked array structure.
SUMMERY OF THE UTILITY MODEL
The utility model discloses the technical problem that will solve lies in current semiconductor laser encapsulation water-cooling structure's discharge and water pressure are great, cause the influence to the stability and the normal work of whole pile battle array structure.
Therefore, the utility model provides a semiconductor laser stacks battle array structure, include:
the packaging structure comprises a positive electrode block and a negative electrode block which are oppositely arranged, wherein a packaging space is formed between the positive electrode block and the negative electrode block;
the array laser is fixed in the packaging space and is respectively connected with the anode block and the cathode block, and a cooling liquid channel is arranged in the array laser;
the positive pole block is provided with a liquid inlet hole and a liquid return hole which are communicated with the cooling liquid channel respectively, the negative pole block is provided with a buffer hole communicated with the cooling liquid channel, the buffer hole is a blind hole formed in the negative pole block, and the opening of the blind hole faces the array laser.
Optionally, a semiconductor laser stack matrix structure, the blind hole is the T style of calligraphy, divide into first section and second section along its axial direction, first section is close to the coolant liquid passageway arranges and the internal diameter with the coolant liquid passageway is unanimous, the internal diameter of second section is greater than first section.
Optionally, the semiconductor laser stack array structure, the blind hole is cross and the middle section internal diameter is greater than the both ends internal diameter.
Optionally, a semiconductor laser stack matrix structure, the coolant liquid passageway include by feed liquor hole orientation run through in proper order in the direction of buffer hole array laser's inlet channel with by the negative pole piece orientation run through in proper order in the return liquid hole direction array laser's liquid outlet channel, liquid outlet channel is through setting up intercommunication passageway in the array laser with inlet channel intercommunication, inlet channel with the feed liquor hole reaches the buffer hole links to each other, liquid outlet channel's exit end with it links to each other to return the liquid hole.
Optionally, in the stacked array structure of a semiconductor laser, the liquid inlet channel and the liquid outlet channel are arranged in parallel at an interval, and/or the liquid inlet channel and the liquid outlet channel have the same inner diameter.
Optionally, the stacked array structure of the semiconductor laser further includes an insulating pad fixed in the packaging space, and the insulating pad is connected to the positive electrode block, the negative electrode block, and the array laser respectively.
Optionally, a semiconductor laser stack matrix structure, the positive pole piece with the negative pole piece all is L style of calligraphy structure, including horizontal section and bending segment, the feed liquor hole is in with returning the liquid hole setting the horizontal section of positive pole piece, the buffer hole sets up the horizontal section of negative pole piece.
Optionally, the stacked array structure of the semiconductor laser device, the array laser device is arranged at one end of the transverse section of the positive electrode block and the transverse section of the negative electrode block far away from the bending section, the insulating cushion block is arranged at one end of the transverse section of the positive electrode block and the transverse section of the negative electrode block close to the bending section, and the side surface of the insulating cushion block is connected with the two bending sections of the positive electrode block and the negative electrode block.
Optionally, the semiconductor laser stack array structure, the bending section of the positive electrode block and the bending section of the negative electrode block are arranged at intervals correspondingly and are provided with gaps.
Optionally, in the stacked array structure of a semiconductor laser, the array laser is formed by stacking a plurality of lasers in a vertical array along a direction from the positive electrode block to the negative electrode block.
The utility model discloses technical scheme has following advantage:
1. the utility model provides a pair of semiconductor laser stacks battle array structure, include:
the packaging structure comprises a positive electrode block and a negative electrode block which are oppositely arranged, wherein a packaging space is formed between the positive electrode block and the negative electrode block;
the array laser is fixed in the packaging space and is respectively connected with the anode block and the cathode block, and a cooling liquid channel is arranged in the array laser;
the positive pole piece is provided with a liquid inlet hole and a liquid return hole which are communicated with the cooling liquid channel respectively, the negative pole piece is provided with a buffer hole communicated with the cooling liquid channel, and the buffer hole is a blind hole which is arranged on the negative pole piece and faces towards the middle inner diameter of one end of the array laser and is larger than the inner diameters of two ends.
According to the semiconductor laser stacked array structure with the structure, as the cooling liquid enters the cooling liquid channel from the liquid inlet hole, and a large amount of cooling liquid is accumulated at the position of the negative electrode block, the impact force on the negative electrode block is large, and therefore, the buffer hole is formed in the negative electrode block corresponding to the tail end of the cooling liquid channel, the cooling liquid is subjected to collision energy loss at the bottom wall of the buffer hole, the water flow pressure is reduced, and the impact force of water flow on a device is greatly reduced; meanwhile, as the buffer hole is a blind hole, water flow can flow back when being impacted, and then flows to the liquid return hole through the cooling liquid channel and flows out, and the cooling liquid and the array laser generate heat exchange to dissipate heat and cool the array laser.
2. The utility model provides a pair of semiconductor laser folds battle array structure still includes insulating cushion, through insulating cushion's setting, can play the purpose of firm array laser, improves the stability in use that the battle array structure was folded to the laser instrument.
3. The utility model provides a pair of semiconductor laser folds battle array structure, positive pole piece and negative pole piece all are L style of calligraphy structure, and the setting of L style of calligraphy structure can be convenient for array laser instrument and insulating cushion's fixed mounting, further improves the stability that the array structure was folded to the laser instrument, reduces the problem that the laser instrument that water impact caused warp the collimation nature that influences laser.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the embodiments or the technical solutions in the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a three-dimensional structure diagram of a stacked array structure of semiconductor lasers in an embodiment of the present invention;
fig. 2 is a cross-sectional structural view of a stacked array structure of semiconductor lasers in an embodiment of the present invention;
fig. 3 is a schematic top view of a stacked array structure of semiconductor lasers according to an embodiment of the present invention.
Description of reference numerals:
1-positive pole block; 2-a negative pole block; 3-an array laser; 4-coolant channels; 5-liquid inlet hole; 6-buffer holes; 7-liquid return hole; 8-insulating cushion blocks; 9-a gap; 10-a transverse segment; 11-bending section.
Detailed Description
The technical solution of the present invention will be described clearly and completely with reference to the accompanying drawings, and obviously, the described embodiments are some, but not all embodiments of the present invention. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
Example 1
The semiconductor laser stacked array structure of this embodiment, as shown in fig. 1-3, including two relative anodal piece 1 and the negative pole piece 2 that set up, be formed with encapsulation space (not shown) between anodal piece 1 and the negative pole piece 2, be equipped with array laser 3 and insulating pad 8 in the encapsulation space, be equipped with coolant liquid passageway 4 between the array laser 3, set up the feed liquor hole 5 and the liquid return hole 7 that communicate with coolant liquid passageway 4 on the anodal piece 1, be equipped with the buffer hole 6 with coolant liquid passageway 4 intercommunication on the negative pole piece 2, buffer hole 6 sets up the blind hole on the terminal surface of negative pole piece 2 orientation array laser 3, the opening of blind hole arranges towards array laser.
In the semiconductor laser stacked array structure with the structure, as the cooling liquid enters the cooling liquid channel 4 from the liquid inlet hole 5, and a large amount of cooling liquid is accumulated at the position of the negative electrode block 2, the impact force on a fastener (not shown) on the array laser 3 and the negative electrode block 2 is large, the aging failure of the fastener is accelerated, the deformation of the array laser 3 is accelerated, and the collimation of laser is influenced; therefore, the buffer hole 6 is arranged at the position, corresponding to the tail end of the cooling liquid channel 4, of the negative electrode block 2, the buffer hole 6 is a blind hole, and water flow is impacted on the blind hole, so that the water flow is slowed down, the water flow pressure is reduced, and the impact force of the water flow on a device is greatly reduced; simultaneously because the buffer hole 6 is the blind hole, rivers receive the striking can flow back and flow to returning the liquid hole 7 and then flow through coolant liquid passageway 4, and the coolant liquid takes away the heat with array laser 3 emergence heat exchange in order to carry out the heat dissipation cooling to array laser 3.
For the buffer hole 6, as shown in fig. 2, the cross section of the buffer hole 6 is cross-shaped, and the inner diameters of the end facing the bottom of the buffer hole 6, that is, the end facing the negative block 2 away from the array laser 3, and the end facing the opening of the buffer hole 6, that is, the end facing the array laser 3, are the same and are both smaller than the inner diameter of the middle section of the buffer hole 6. As the deformation, the buffer hole still can set to the T style of calligraphy, also divide into first section and second section along its axial direction along the rivers direction, first section is close to array laser 3 and sets up and the internal diameter is unanimous with coolant liquid passageway 4, second section internal diameter is greater than first section internal diameter, be cross or T style of calligraphy structure with buffer hole 6 setting, the inside cross section in buffer hole increases, make rivers enter into the inside diffusion in buffer hole and come, rivers slow down, water pressure reduces, the impact force of rivers backward flow to the device has been reduced greatly.
For the positive electrode block 1 and the negative electrode block 2, as shown in fig. 1 to 3, the positive electrode block 1 and the negative electrode block 2 are both L-shaped structures and each composed of a transverse section 10 and a bending section 11, a liquid inlet hole 5 and a liquid return hole 7 are both arranged on the transverse section 10 of the positive electrode block 1 and penetrate through the front end and the rear end of the positive electrode block 1, a buffer hole 6 is arranged on the transverse section 10 of the negative electrode block 2, and the end face of the negative electrode block 2 which is not penetrated away from the array laser 3 is also the upper end face shown in fig. 2; the transverse sections 10 of the anode block 1 and the cathode block 2 are arranged in parallel at intervals, the bent sections 11 of the anode block 1 and the cathode block 2 are arranged opposite to each other at intervals so that a gap 9 is formed between the bent sections 11, the transverse sections 10 of the anode block 1 and the cathode block 2 are 90 degrees, namely the anode block 1 and the cathode block 2 form a U-shaped structure with a gap 9 in the middle, and the array laser 3 and the insulating cushion block 8 are packaged in the U-shaped structure; and the array laser 3 is arranged on one side, away from the two bending sections 11 of the positive electrode block 1 and the negative electrode block 2, of the two transverse sections 10 of the positive electrode block 1 and the negative electrode block 2, namely the left side as shown in fig. 1 to 3, the insulating cushion block 8 is arranged on one side, close to the two bending sections 11 of the positive electrode block 1 and the negative electrode block 2, of the transverse sections 10 of the positive electrode block 1 and the negative electrode block 2, namely the right side as shown in fig. 1 to 3, and the right side face of the insulating cushion block 8 is respectively connected with the left side faces of the two bending sections 11. The sum of the length of the array laser 3 and the length of the insulating cushion block 8 is equal to or slightly smaller than the length of the transverse section 10, so that the array laser 3 and the insulating cushion block 8 are packaged in a packaging space surrounded by the anode block 1 and the cathode block 2. The specific lengths of the transverse segment 10 and the bending segment 11 are not limited and described herein, and are not the innovative point of the present invention, and can be chosen and designed by those skilled in the art according to the actual needs. The materials of the anode block 1 and the cathode block 2 can be oxygen-free copper which is more conventional in the field, and the like, and are not limited and described specifically, which is not the innovation point of the present invention.
As shown in fig. 2, the cooling liquid channel 4 includes two liquid inlet channels 41 and liquid outlet channels 42 which are arranged in parallel at intervals and have the same inner diameter, the liquid inlet channels 41 and the liquid outlet channels 42 are communicated with each other through a communication channel (not shown) inside the laser, and a communication channel is arranged inside each laser and is respectively communicated with the liquid inlet channels 41 and the liquid outlet channels 42, so that the cooling liquid in the liquid inlet channels 41 flows back through the buffer holes 6, flows into the liquid outlet channels 42 through the communication channels in each laser, and finally flows out through the liquid return holes 7; the structure of the communicating channel is not limited herein, and can be a U-shaped structure, a spiral structure or a linear channel, as long as the communication between the liquid inlet channel 41 and the liquid outlet channel 42 can be realized, the liquid inlet channel 41 is connected with the liquid inlet hole 5 and the buffer hole 6, the liquid outlet channel is connected with the liquid return hole 7, and the outlet end of the liquid outlet channel 42 is connected with the liquid return hole 7; specifically, as shown in fig. 2, one end of the liquid inlet channel 41 is arranged opposite to the liquid inlet hole 5 on the positive electrode block 1, and the other end of the liquid inlet channel is arranged opposite to the buffer hole 6 on the negative electrode block 2, that is, the buffer hole 6 is arranged opposite to the liquid inlet hole 5, the liquid outlet end of the liquid outlet channel 42 is arranged opposite to the liquid return hole 7, that is, the lower end of the liquid outlet channel shown in fig. 2 is arranged opposite to the liquid return hole 7, the inner diameter of the liquid outlet channel 4 is consistent with the inner diameter of the liquid return hole 7, the inner diameter of the liquid inlet channel 41 is consistent with the liquid inlet hole 5, and the inner diameters of the two ends of the buffer hole 6, that; the liquid inlet channel 41 and the liquid outlet channel 42 sequentially penetrate through the array laser 3, that is, circulation holes (not shown) are arranged on the array laser 3, and the circulation holes are connected in series to form the liquid inlet channel 41 and the liquid outlet channel 42. Optionally, the inner diameters of the liquid inlet channel 41 and the liquid outlet channel 42 may not be the same, the inner diameter of the liquid inlet hole 5 and the inner diameter of the liquid inlet channel 41 may not be the same, and the inner diameters of the liquid return hole 7 and the liquid outlet channel 42 may not be the same, but are not necessarily the same. As another alternative, the positions of the buffer hole 6 and the liquid inlet hole 5 may not be arranged opposite to each other, and do not necessarily need to be arranged opposite to each other. For the liquid inlet hole 5 and the liquid return hole 7, the holes may be threaded holes, for example, connected to an external cold source machine through a copper pipe or the like.
For the array laser 3 and the insulating spacer 8, as shown in fig. 1 to 3, the array laser 3 is arranged on the left side, the insulating spacer 8 is arranged on the right side, the left side of the insulating spacer 8 is connected with the right end of the array laser 3, the array laser 3 is formed by vertically stacking a plurality of lasers in an array manner, that is, the array laser 3 is parallel to the lateral sides of the transverse sections 10 of the anode block 1 and the cathode block 2; specifically, in the direction from the positive block 1 to the negative block 2, a plurality of lasers are stacked in a vertical array and are positioned and fixed by a positioning structure (not shown), such as a conventional positioning fixture structure and a fastener (not shown), such as a conventional bolt, and the like, and the lasers are electrically connected in series, and the positioning structure and the fixing structure are not described and limited in detail herein, which is a prior art and is not an innovative point of the present invention; each laser is assembled by a heat sink, a chip, an insulating sheet and a negative plate, and the specific structure and the working principle are not limited and described herein and are the prior art and the structure; insulating pad 8 is the square form, and highly unanimous and with the height unanimous of positive pole piece 1 and negative pole piece 2 of array laser 3, to insulating pad 8, for prior art, not the utility model discloses an innovation point does not do detailed description and injectly here. As optional, the utility model discloses a laser instrument folds battle array structure can not include insulating cushion 8, that is to say insulating cushion 8 is unnecessary part, and insulating cushion 8's purpose is mainly in order to stabilize laser instrument and fold battle array structure.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications can be made without departing from the scope of the invention.
Claims (10)
1. A stacked array structure of semiconductor lasers, comprising:
the battery comprises a positive electrode block (1) and a negative electrode block (2) which are oppositely arranged, wherein a packaging space is formed between the positive electrode block (1) and the negative electrode block (2);
the array laser (3) is fixed in the packaging space and is respectively connected with the anode block (1) and the cathode block (2), and a cooling liquid channel (4) is arranged in the array laser (3); it is characterized in that the preparation method is characterized in that,
be equipped with on anodal piece (1) respectively with feed liquor hole (5) and the liquid hole (7) of returning of coolant liquid passageway (4) intercommunication, be equipped with on negative pole piece (2) with buffer hole (6) of coolant liquid passageway (4) intercommunication, buffer hole (6) are for offering in blind hole on negative pole piece (2), the opening orientation of blind hole array laser (3) are arranged.
2. The stacked array structure of semiconductor lasers as claimed in claim 1, wherein said blind hole is T-shaped and divided into a first section and a second section along the axial direction, said first section is disposed close to said cooling liquid channel (4) and has an inner diameter identical to the inner diameter of said cooling liquid channel (4), and said second section has an inner diameter larger than the inner diameter of said first section.
3. The stacked array structure of semiconductor lasers as claimed in claim 2 wherein said blind holes are cross-shaped and have a middle section inner diameter greater than two ends inner diameter.
4. The stacked array structure of semiconductor lasers as claimed in claim 1, wherein the cooling liquid channel (4) comprises a liquid inlet channel (41) sequentially penetrating through the array laser (3) from the liquid inlet hole (5) to the buffer hole (6) and a liquid outlet channel (42) sequentially penetrating through the array laser (3) from the negative pole block (2) to the liquid return hole (7), the liquid outlet channel (42) is communicated with the liquid inlet channel (41) through a communication channel arranged in the array laser (3), the liquid inlet channel (41) is connected with the liquid inlet hole (5) and the buffer hole (6), and the outlet end of the liquid outlet channel (42) is connected with the liquid return hole (7).
5. The stacked array structure of semiconductor lasers as claimed in claim 4 wherein said inlet channel (41) and said outlet channel (42) are spaced in parallel and/or the inner diameters of said inlet channel (41) and said outlet channel (42) are equivalent.
6. The stacked array structure of semiconductor lasers according to claim 5, further comprising an insulating spacer block (8) fixed in the packaging space, wherein the insulating spacer block (8) is connected to the positive electrode block (1), the negative electrode block (2) and the array laser (3), respectively.
7. The stacked array structure of semiconductor lasers as claimed in claim 6 wherein said positive electrode block (1) and said negative electrode block (2) are both L-shaped and include a transverse section (10) and a bending section (11), said liquid inlet hole (5) and said liquid return hole (7) are disposed on the transverse section of said positive electrode block (1), and said buffer hole (6) is disposed on the transverse section of said negative electrode block (2).
8. The stacked array structure of semiconductor lasers according to claim 7, wherein the array laser (3) is disposed at one end of the transverse segment of the positive electrode block (1) and the negative electrode block (2) far away from the bent segment, the insulating spacer (8) is disposed at one end of the transverse segment of the positive electrode block (1) and the negative electrode block (2) near the bent segment, and the side surface of the insulating spacer (8) is connected with the two bent segments of the positive electrode block (1) and the negative electrode block (2).
9. The stacked array structure of semiconductor lasers as claimed in claim 8 wherein the bent segment of the positive electrode block (1) and the bent segment of the negative electrode block (2) are correspondingly spaced and have gaps (9) formed therebetween.
10. A stacked structure of semiconductor lasers as claimed in any one of claims 1 to 9, wherein said array laser (3) is formed by stacking a plurality of lasers in a vertical array in a direction from said positive block (1) toward said negative block (2).
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| Application Number | Priority Date | Filing Date | Title |
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| CN201922095383.6U CN210779492U (en) | 2019-11-28 | 2019-11-28 | Semiconductor laser stack array structure |
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| CN201922095383.6U CN210779492U (en) | 2019-11-28 | 2019-11-28 | Semiconductor laser stack array structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113054527A (en) * | 2021-03-16 | 2021-06-29 | 北京工业大学 | Heat radiator for high power semiconductor laser |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113054527A (en) * | 2021-03-16 | 2021-06-29 | 北京工业大学 | Heat radiator for high power semiconductor laser |
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