CN210723092U - Heat-insulating semiconductor thermoelectric/electrothermal conversion element - Google Patents
Heat-insulating semiconductor thermoelectric/electrothermal conversion element Download PDFInfo
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- CN210723092U CN210723092U CN201921559325.8U CN201921559325U CN210723092U CN 210723092 U CN210723092 U CN 210723092U CN 201921559325 U CN201921559325 U CN 201921559325U CN 210723092 U CN210723092 U CN 210723092U
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 115
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 25
- 239000012212 insulator Substances 0.000 claims abstract description 31
- 238000005538 encapsulation Methods 0.000 claims abstract description 3
- 230000005540 biological transmission Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 9
- 238000010248 power generation Methods 0.000 description 8
- 230000005679 Peltier effect Effects 0.000 description 6
- 230000005678 Seebeck effect Effects 0.000 description 6
- 238000001816 cooling Methods 0.000 description 6
- 238000009413 insulation Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000005485 electric heating Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000026058 directional locomotion Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000005676 thermoelectric effect Effects 0.000 description 1
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Abstract
The utility model provides a thermal-insulated semiconductor thermoelectric/electric heat conversion element, include the space of constituteing by upper and lower two end insulators and encapsulation, all hug closely on the inner wall of two end insulators has a plurality of outer electrodes, its characterized in that: a pair of N-type semiconductors or P-type semiconductors which are arranged up and down is connected between any two adjacent outer electrodes on the upper and lower piece of end insulators, a pair of inner electrodes are arranged between each pair of N-type semiconductors or P-type semiconductors, each pair of inner electrodes are connected through inner leads, the N-type semiconductors and the P-type semiconductors are arranged at intervals, and all the N-type semiconductors and the P-type semiconductors form a series structure through the outer electrodes. The utility model discloses a heat has been blocked from the higher end insulator of temperature toward the transmission route of the lower end insulator of temperature in space, has improved the efficiency of electric heat conversion.
Description
Technical Field
The utility model relates to a thermal-insulated semiconductor thermoelectric/electric heat conversion element is a semiconductor thermoelectric/electric heat conversion element based on peltier effect and seebeck effect, belongs to semiconductor material and electronic components technical field.
Background
The peltier effect means that when a current passes through a loop formed by conductors made of different materials, heat absorption and heat release phenomena occur at the joint of the conductors made of different materials along with the difference of current directions except for the generation of irreversible joule heat. This was discovered by j.c.a. peltier in 1834. In short, under the action of an external electric field, electrons generate directional motion, and a part of internal energy is brought to the other end of the electric field. Fig. 1 shows a semiconductor cooling or heating apparatus using P-type and N-type semiconductors as main materials, which uses this principle.
The seebeck effect is the inverse of the peltier effect. The seebeck effect, also called the first thermoelectric effect, refers to the thermoelectric phenomenon in which the voltage difference between two substances is caused by the temperature difference between two different electrical conductors or semiconductors. This was discovered in 1821 by thomas john seebeck. In the case of a semiconductor material, in short, carriers in the semiconductor move from a hot end to a cold end under a temperature gradient until reaching dynamic equilibrium with an internal electric field, and a stable thermoelectric electromotive force is formed at two ends of the semiconductor. Fig. 2 shows a semiconductor thermoelectric power generation device using this principle and made of P-type and N-type semiconductors as main materials.
At present, the efficiency of a semiconductor refrigerating or heating device or a thermoelectric power generation device which is made of P-type and N-type semiconductors as main materials is not high. One of the main reasons is the conductive loss of heat. In the semiconductor cooling or heating apparatus using P-type and N-type semiconductors as main materials shown in fig. 1, two large arrows indicate effective heat transfer. After the power is switched on, the temperature of the insulator 1 at the lower end serving as the hot end is higher than that of the insulator 1 at the upper end serving as the cold end, a part of heat is reversely transferred from the hot end to the cold end, or a part of cold is reversely transferred from the cold end to the hot end, so that the temperature difference generated by the Peltier effect is wasted, and the efficiency of the semiconductor refrigerating or heating device is reduced. The semiconductor thermoelectric power generation device shown in fig. 2, which is made of P-type and N-type semiconductors as main materials, has the same problem. The two large arrows indicate the process of the temperature difference generated by the effective heat flow. The temperature of the lower end insulator 1 is high by absorbing the heat of the surrounding heat source; the heat is radiated to the surrounding cold source, the temperature of the insulator 1 at the upper end is low, and the temperature difference between the insulator 1 at the upper end and the insulator at the lower end forms stable electromotive force in the semiconductor thermoelectric power generation device due to the seebeck effect. But simultaneously some heat then directly has passed through semiconductor thermoelectric generation device from the heat source direct transfer to the cold source, and this has not only wasted the heat, has reduced the difference in temperature of hot junction and cold junction moreover, leads to the low of thermoelectric force reduction and semiconductor thermoelectric generation device's efficiency.
Disclosure of Invention
The to-be-solved technical problem of the utility model is: how to reduce the heat conduction inside the semiconductor thermoelectric/electric heating conversion element and improve the efficiency of a semiconductor cooling/heating device or a thermoelectric power generation device which is made of P-type and N-type semiconductors as main materials.
In order to solve the technical problem, the utility model provides a thermal-insulated semiconductor thermoelectric/electric heat conversion element, include the space of constituteing by two upper and lower end insulators and encapsulation, all hug closely on the inner wall of two end insulators a plurality of outer electrodes, its characterized in that: a pair of N-type semiconductors or P-type semiconductors which are arranged up and down is connected between any two adjacent outer electrodes on the upper and lower piece of end insulators, a pair of inner electrodes are arranged between each pair of N-type semiconductors or P-type semiconductors, each pair of inner electrodes are connected through inner leads, the N-type semiconductors and the P-type semiconductors are arranged at intervals, and all the N-type semiconductors and the P-type semiconductors form a series structure through the outer electrodes.
Preferably, each pair of the N-type semiconductors consists of two N-type semiconductors which are arranged in an up-and-down alignment manner; each pair of the P-type semiconductors consists of two P-type semiconductors which are arranged in an up-and-down alignment mode.
Preferably, the space is in a vacuum state.
Preferably, a heat insulation layer is arranged between each pair of the inner electrodes, a plurality of through holes are formed in the heat insulation layer, and an inner lead used for connecting the upper inner electrode and the lower inner electrode is arranged in each through hole.
The utility model discloses a communicating area of narrowest department between two upper and lower tip insulators of furthest reduction has reduced the heat-conduction through solid material between the upper and lower two tip insulators that have the difference in temperature furthest, improves the efficiency that the semiconductor refrigeration/that make for the main material with P type and N type semiconductor heats device or thermoelectric generation device. The invention also uses the vacuum space to block the heat conduction between the upper and lower insulators with temperature difference through gas, further improves the efficiency of the semiconductor refrigerating/heating device or the temperature difference generating device which is made of P-type and N-type semiconductors as main materials. Meanwhile, in order to facilitate the manufacture of the semiconductor thermoelectric/electrothermal conversion element, the utility model also provides a technology for connecting and supporting each pair of the N-type semiconductor and the P-type semiconductor which are arranged up and down by using the heat insulation insulating layer with the inner lead.
The utility model has the advantages that: because between the external electrodes, an original complete P-type semiconductor is divided into two sections, the middle of the P-type semiconductor is connected by the internal electrode and the internal wire, and an original complete N-type semiconductor is also divided into two sections, the middle of the N-type semiconductor is connected by the internal electrode and the internal wire. The inner lead is thin and has a certain length, the thermal resistance is large, the evacuated space does not transfer heat at all, and the semiconductor thermoelectric/electric heating conversion element made by the method has no heat conduction. Therefore, the thermoelectric/electrothermal interconversion element of the semiconductor disclosed by the utility model is heat-insulated, and the thermoelectric/electrothermal interconversion efficiency is high. And simultaneously, the utility model discloses an advantage still lies in: the heat insulation layer in which the inner lead is prefabricated is used, and each pair of vertically aligned P-type semiconductors and each pair of vertically aligned N-type semiconductors are respectively connected into a whole, so that the heat insulation effect of the semiconductor thermoelectric/electric-heat interconversion element disclosed by the invention is kept, and the manufacturing of the semiconductor thermoelectric/electric-heat interconversion element is facilitated.
Drawings
Fig. 1 is a schematic view of a semiconductor cooling/heating apparatus based on the peltier effect;
FIG. 2 is a schematic diagram of a semiconductor thermoelectric power generation device based on the Seebeck effect;
FIG. 3 is a schematic view of an insulated semiconductor thermoelectric/electrothermal conversion element according to the present invention;
FIG. 4 is a schematic view of a thermally insulated semiconductor thermoelectric/electrothermal conversion element of the present invention (with an insulating layer in between);
fig. 5 is a schematic view of a semiconductor cooling/heating apparatus using a heat-insulating semiconductor thermoelectric/electric-heat converting element according to the present invention;
fig. 6 is a schematic diagram of a semiconductor thermoelectric power generation device fabricated using a thermally insulated semiconductor thermoelectric/electric-thermal conversion element according to the present invention.
Detailed Description
In order to make the present invention more comprehensible, preferred embodiments are described in detail below with reference to the accompanying drawings.
Example 1
As shown in fig. 3, the core of the thermal insulating semiconductor thermoelectric/electrothermal conversion element disclosed in the present invention is an array composed of P-type semiconductors 6 and N-type semiconductors 7 and uniformly arranged in a plane, wherein each pair of P-type semiconductors 6 aligned up and down is connected to an inner lead 5 through an inner electrode 4 to function as a P-type semiconductor, and each pair of N-type semiconductors 7 aligned up and down is connected to an inner lead 5 through an inner electrode 4 to function as an N-type semiconductor. The N-type semiconductor and the P-type semiconductor thus formed are connected in series by two sets of upper and lower external electrodes 3. A pair of end insulators 1 are closely attached to the surfaces of the upper and lower groups of external electrodes 3, and an N-type semiconductor and a P-type semiconductor which are connected in series are integrated with a package 2 to form a heat-insulating semiconductor thermoelectric/electrothermal conversion element. In order to further enhance the heat insulating effect of such a heat insulating semiconductor thermoelectric/electrothermal conversion element, the space 8 may be formed and maintained in a vacuum state.
Fig. 5 is a schematic view of a semiconductor cooling/heating apparatus manufactured by using a heat-insulating semiconductor thermoelectric/electric-heat conversion element according to the present invention. According to the Peltier effect, the external electrode 3 of the upper layer guides electrons from the P-type semiconductor to the N-type semiconductor, and simultaneously absorbs heat from the surroundings through the terminal insulator 1 of the upper layer, so that the temperature of the terminal insulator 1 of the upper layer and the surrounding is reduced; the lower external electrode 3 guides electrons from the N-type semiconductor to the P-type semiconductor while emitting heat to the surroundings through the lower terminal insulator 1, raising the temperature of the lower terminal insulator 1 itself and the surroundings. The vacuum space 8 blocks the heat transfer path from the lower insulator 1 to the upper insulator 1, thereby improving the efficiency of electrothermal conversion.
Fig. 6 is a schematic diagram of a semiconductor thermoelectric power generation device fabricated using a thermally insulated semiconductor thermoelectric/electric-thermal conversion element according to the present invention. The device is cold at the upper part and hot at the lower part, according to the Seebeck effect, a temperature gradient is formed between an outer electrode 3 at the lower part and the outer electrode 3 at the upper part by an end insulator 1 at the hot at the lower part and the end insulator 1 at the cold at the upper part, and carriers (free electrons) in an N-type semiconductor are pushed to the outer electrode 3 at the upper part from the outer electrode 3 at the lower part through an inner electrode 4 and an inner lead 5 to form an electromotive force with the lower part being a positive electrode and the upper part being a negative electrode; at the same time, carriers (holes) in the P-type semiconductor are pushed from the lower external electrode 3 to the upper external electrode 3 through the internal electrode 4 and the internal lead 5, and an electromotive force is formed, wherein the lower part is a negative electrode, and the upper part is a positive electrode. The upper and lower groups of external electrodes 3 connect the N-type semiconductor and P-type semiconductor with electromotive force in series in turn to form stable temperature difference electromotive force, and generate electricity by using the temperature difference between the upper and lower parts. The vacuum space 8 blocks the heat transfer path from the lower insulator 1 having a higher temperature to the upper insulator 1 having a lower temperature, thereby improving the efficiency of thermoelectric conversion.
Example 2
In this embodiment, in order to facilitate the production and fabrication of such an insulated semiconductor thermoelectric/electrothermal conversion element, a heat insulating layer 9 having a via hole 10 may be added, as shown in fig. 4. A plurality of through holes 10 are formed in the heat insulation layer 9, and an inner lead 5 for connecting the upper inner electrode 4 and the lower inner electrode 4 is arranged in each through hole 10.
The rest is the same as in example 1.
Claims (4)
1. The utility model provides a thermal-insulated semiconductor thermoelectric/electric heat conversion element, includes space (8) of constituteing by upper and lower two-piece end insulator (1) and encapsulation (2), all hugs closely on the inner wall of two-piece end insulator (1) has a plurality of outer electrodes (3), its characterized in that: a pair of N-type semiconductors (7) or P-type semiconductors (6) arranged up and down is connected between any two adjacent outer electrodes (3) on the upper and lower piece of end insulators (1), a pair of inner electrodes (4) are arranged between each pair of N-type semiconductors (7) or P-type semiconductors (6), each pair of inner electrodes (4) are connected through an inner lead (5), the N-type semiconductors (7) and the P-type semiconductors (6) are arranged at intervals, and all the N-type semiconductors (7) and the P-type semiconductors (6) form a series structure through the outer electrodes (3).
2. An insulated semiconductor thermoelectric/electrothermal conversion element according to claim 1, wherein: each pair of N-type semiconductors (7) consists of two N-type semiconductors (7) which are arranged in an up-down alignment manner; each pair of the P-type semiconductors (6) consists of two P-type semiconductors (6) which are arranged in an up-and-down alignment mode.
3. An insulated semiconductor thermoelectric/electrothermal conversion element according to claim 1 or 2, wherein: the space (8) is in a vacuum state.
4. An insulated semiconductor thermoelectric/electrothermal conversion element according to claim 1 or 2, wherein: every be to be equipped with thermal-insulated insulating layer (9) between inner electrode (4), thermal-insulated insulating layer (9) inside is equipped with a plurality of via holes (10), is equipped with in every via hole (10) and is used for connecting two inner electrode (4) about being equipped with inner lead (5).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921559325.8U CN210723092U (en) | 2019-09-19 | 2019-09-19 | Heat-insulating semiconductor thermoelectric/electrothermal conversion element |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921559325.8U CN210723092U (en) | 2019-09-19 | 2019-09-19 | Heat-insulating semiconductor thermoelectric/electrothermal conversion element |
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| CN210723092U true CN210723092U (en) | 2020-06-09 |
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| CN201921559325.8U Expired - Fee Related CN210723092U (en) | 2019-09-19 | 2019-09-19 | Heat-insulating semiconductor thermoelectric/electrothermal conversion element |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110600606A (en) * | 2019-09-19 | 2019-12-20 | 东华大学 | Heat-insulating semiconductor thermoelectric/electrothermal conversion element |
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2019
- 2019-09-19 CN CN201921559325.8U patent/CN210723092U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110600606A (en) * | 2019-09-19 | 2019-12-20 | 东华大学 | Heat-insulating semiconductor thermoelectric/electrothermal conversion element |
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| CF01 | Termination of patent right due to non-payment of annual fee |