CN210711286U - One-way light-transmitting glass - Google Patents
One-way light-transmitting glass Download PDFInfo
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- CN210711286U CN210711286U CN201921509890.3U CN201921509890U CN210711286U CN 210711286 U CN210711286 U CN 210711286U CN 201921509890 U CN201921509890 U CN 201921509890U CN 210711286 U CN210711286 U CN 210711286U
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- silicon layer
- composite dielectric
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Abstract
The utility model discloses an one-way printing opacity glass, include: the glass substrate, and a composite dielectric layer, an amorphous silicon layer, a first SiOx layer, a microcrystalline silicon layer and a second SiOx layer which are sequentially stacked on the surface of one side of the glass substrate; wherein the composite dielectric layer and the amorphous silicon layer form a first optical module, and the first SiOx layer, the microcrystalline silicon layer and the second SiOx layer form a second optical module; the composite dielectric layer, the amorphous silicon layer, the first SiOx layer, the microcrystalline silicon layer and the second SiOx layer are sequentially deposited on the same side face of the glass substrate. The utility model discloses an above-mentioned multilayer structure superposes direct deposit and forms, and its sound construction, compactness, simple utilize different refracting indexes and each layer film thickness combination between each layer, constitute an asymmetric structure optical device, utilize the interference principle of light for two faces have different reflectivities to the light, thereby realize one-way printing opacity.
Description
Technical Field
The utility model relates to an optical glass field especially relates to an one-way printing opacity glass.
Background
The unidirectional glass has a unidirectional perspective function and has important application value in certain specific places. In the prior art, the one-way perspective glass generally adopts a film structure, and the one-way perspective effect of the glass is realized through the film structure, but the film structure has certain problems, such as the defects that the adhered one-way film is easy to damage and fall off after being rubbed.
Another type of prior art half mirror is a metal layer deposited on the glass surface and its other functional layer structure. Although the structure is simple, the metal layer of the half mirror is easy to be separated from the glass surface, and particularly, when the half mirror is used for a long time, the metal in the metal layer is oxidized, so that the half mirror directly causes the reduction of the perspective property, and even loses the function of half mirror. In addition, the above-mentioned existing one-way perspective glass has a one-way light-transmitting effect only when there is a significant difference between the light sources on both sides, so that there is a certain limitation in practical application.
SUMMERY OF THE UTILITY MODEL
The utility model overcomes the defects of the prior art, the utility model provides a one-way light-transmitting glass with firm and simple structure. The glass forms an asymmetric structure optical device by utilizing the combination of different refractive indexes and the thicknesses of all layers of films, and utilizes the interference principle of light to ensure that two surfaces have different reflectivities to light, thereby realizing one-way light transmission.
In order to achieve the above purpose, the utility model adopts the technical scheme that: the glass substrate, and a composite dielectric layer, an amorphous silicon layer, a first SiOx layer, a microcrystalline silicon layer and a second SiOx layer which are sequentially stacked on the surface of one side of the glass substrate; the composite dielectric layer and the amorphous silicon layer form a first optical module, and the first SiOx layer, the microcrystalline silicon layer and the second SiOx layer form a second optical module; the composite dielectric layer, the amorphous silicon layer, the first SiOx layer, the microcrystalline silicon layer and the second SiOx layer are sequentially deposited on the same side face of the glass substrate.
In a preferred embodiment of the present invention, the composite dielectric layer includes one or more composite films of SiOx, SiNx, SiNyOx.
In a preferred embodiment of the present invention, the composite dielectric layer, the amorphous silicon layer, the first SiOx layer, the microcrystalline silicon layer, and the second SiOx layer are deposited by a vapor deposition method using plasma enhanced chemistry.
In a preferred embodiment of the present invention, the thickness of the composite dielectric layer is 12-20nm, and the refractive index of the composite dielectric layer is 1.6-2.2.
In a preferred embodiment of the present invention, the thickness of the amorphous silicon layer is 20-35nm, and the refractive index is 3.2-3.7.
In a preferred embodiment of the present invention, the first SiOx layer has a thickness of 20 to 40nm and a refractive index of 1.3 to 2.3.
In a preferred embodiment of the present invention, the microcrystalline silicon layer has a thickness of 10-15nm and a refractive index of 3.6-3.8.
In a preferred embodiment of the present invention, the second SiOx layer has a thickness of 40 to 80nm and a refractive index of 2.3 to 2.7.
In a preferred embodiment of the present invention, the crystallization rate of the microcrystalline silicon layer is 5-15%.
The utility model provides a defect that exists among the background art, the utility model discloses possess following beneficial effect:
(1) the glass forms an asymmetric structure optical device by utilizing the combination of different refractive indexes among layers and the thickness of each layer, and the two surfaces have different reflectivities to light by utilizing the interference principle of light, so that unidirectional light transmission is realized; the optical module comprises a composite dielectric layer and an amorphous silicon layer, wherein the two layers of films form a first optical module and play a role in increasing reflection of light incident from a glass surface; similarly, the first SiOx layer, the microcrystalline silicon layer and the second SiOx layer form a second optical module to further enhance the reflection of light; the reflectivity is enhanced by the cooperative cooperation of the two optical modules.
(2) Each layer of structure is deposited by a plasma enhanced chemical vapor deposition method, the whole process is relatively simple, the glass does not need to be transferred, and each layer of film can be prepared in the same deposition cavity.
(3) The glass does not contain a metal layer in each layer structure, so that the problem of oxidation failure of the metal layer in the conventional unidirectional glass can be effectively solved, and the unidirectional perspective is not reduced basically.
(4) On one hand, the composite dielectric layer provides a film structure with a refractive index smaller than that of the amorphous silicon layer, and an optical module which has an interference effect on light is formed on the amorphous silicon layer; on the other hand, the amorphous silicon film can also be used as a buffer layer between the glass substrate and the amorphous silicon layer, so that the bonding force of the amorphous silicon layer on the glass substrate is enhanced, and the stability of the amorphous silicon layer is improved.
Drawings
The present invention will be further explained with reference to the drawings and examples;
FIG. 1 is a schematic view of the structure of the one-way transparent glass of the present invention;
FIG. 2 is a schematic view of the manufacturing process of the one-way transparent glass of the present invention;
wherein: 1 a glass substrate; 2 a composite dielectric layer; 3 an amorphous silicon layer; 4 a first SiOx layer; a 5 microcrystalline silicon layer; 6 a second SiOx layer.
Detailed Description
The invention will now be described in further detail with reference to the accompanying drawings, which are simplified schematic drawings and illustrate, by way of illustration only, the basic structure of the invention, and which therefore show only the constituents relevant to the invention.
The method comprises the following steps: the glass substrate comprises a glass substrate 1, and a composite dielectric layer 2, an amorphous silicon layer 3, a first SiOx layer 4, a microcrystalline silicon layer 5 and a second SiOx layer 6 which are sequentially stacked on the surface of one side of the glass substrate 1; wherein the composite dielectric layer 2 and the amorphous silicon layer 3 constitute a first optical module, and the first SiOx layer 4, the microcrystalline silicon layer 5 and the second SiOx layer 6 constitute a second optical module; the composite dielectric layer 2, the amorphous silicon layer 3, the first SiOx layer 4, the microcrystalline silicon layer 5, and the second SiOx layer 6 are sequentially deposited on the same side of the glass substrate 1.
As shown in fig. 2, the steps for preparing the one-way light-transmitting glass are as follows:
s1, depositing a composite dielectric layer 2 on the glass substrate 1;
s2, depositing an amorphous silicon layer 3 on the composite dielectric layer 2 by adopting a plasma enhanced chemical vapor deposition method;
s3 depositing a first SiOx layer 4 on the amorphous silicon layer 3 by using a plasma enhanced chemical vapor deposition method;
s4 depositing a microcrystalline silicon layer 5 on the first SiOx layer 4 by using a plasma enhanced chemical vapor deposition method;
s5 deposits a second SiOx layer 6 on the microcrystalline silicon using plasma enhanced chemical vapor deposition.
The composite dielectric layer 2 comprises one or more composite films of SiOx, SiNx and SiNyOx. The composite dielectric layer 2, the amorphous silicon layer 3, the first SiOx layer 4, the microcrystalline silicon layer 5, and the second SiOx layer 6 can be deposited by a vapor deposition method using plasma enhanced chemical processes.
The thickness of the composite dielectric layer 2 is 12-20nm, and the refractive index of the composite dielectric layer 2 is 1.6-2.2; the thickness of the amorphous silicon layer 3 is 20-35nm, and the refractive index is 3.2-3.7; the thickness of the first SiOx layer 4 is 20-40nm, and the refractive index is 1.3-2.3; the thickness of the microcrystalline silicon layer 5 is 10-15nm, and the refractive index is 3.6-3.8; the thickness of the second SiOx layer 6 is 40-80nm, and the refractive index is 2.3-2.7.
The composite dielectric layer 2 is prepared by adopting a plasma enhanced chemical vapor deposition method, and the preparation process comprises the following steps: the deposition temperature is 180 ℃ and 240 ℃; the pressure in the equipment cavity is 30-60Pa during deposition; the power density of the plasma is 300-450W/m 2; SiH4, CO2 and NH3 are used as reactant source gases, wherein the ratio of SiH 4: CO 2: flow ratio of NH3 is 1: (0-1.2): (0-0.8).
The amorphous silicon layer 3 is prepared by adopting a plasma enhanced chemical vapor deposition method, and the preparation process comprises the following steps: the deposition temperature is 180 ℃ and 220 ℃; the pressure in the equipment cavity is 30-45Pa during deposition; the power density of the plasma is 400-600W/m 2; SiH4 and H2 are used as reactant source gases, where SiH 4: the flow ratio of H2 is 1: (0.8-1.4).
The first SiOx layer 4 is prepared by adopting a plasma enhanced chemical vapor deposition method, and the preparation process comprises the following steps: the deposition temperature is 180 ℃ and 220 ℃; the pressure in the equipment cavity is 30-55Pa during deposition; the power density of the plasma is 500-650W/m 2; SiH4 and CO2 are used as reactant source gases, where SiH 4: the flow ratio of CO2 was 1: (1.2-2.0).
The microcrystalline silicon layer 5 is prepared by adopting a plasma enhanced chemical vapor deposition method, and the preparation process comprises the following steps: the deposition temperature is 160 ℃ and 200 ℃; the pressure in the equipment cavity is 50-70Pa during deposition; the power density of the plasma is 700-1100W/m 2; SiH4 and H2 are used as reactant source gases, where SiH 4: the flow ratio of H2 is 1: (0.5-1.2).
The second SiOx layer 6 is prepared by adopting a plasma enhanced chemical vapor deposition method, and the preparation process comprises the following steps: the deposition temperature is 180 ℃ and 220 ℃; the pressure in the equipment cavity is 30-55Pa during deposition; the power density of the plasma is 500-650W/m 2; SiH4 and CO2 are used as reactant source gases, where SiH 4: the flow ratio of CO2 was 1: (0.6-1.2).
In the above embodiment, the thickness of the composite dielectric layer 2 is 12-20 nm; the thickness of the amorphous silicon layer 3 is 20-35 nm; the thickness of the first SiOx layer 4 is 20-40 nm; the thickness of the microcrystalline silicon layer 5 is 5-15 nm; the thickness of the second SiOx layer 6 is 40-80 nm.
In the technical scheme of the embodiment, the ultra-white glass with the thickness of 3mm is selected as the glass substrate 1, and then the composite dielectric layer 2 is prepared on the glass by deposition through a plasma enhanced chemical vapor deposition method. Preferably, SiNxOy is used as the composite dielectric layer 2 in this embodiment, and the thickness of the SiNxOy is 15 to 18 nm. Then, an amorphous silicon layer 3 is deposited on the composite dielectric layer 2 by using a plasma enhanced chemical vapor deposition method, wherein the thickness of the amorphous silicon layer 3 is 20-35nm, and preferably, the average thickness of the amorphous silicon layer 3 in the embodiment is 25 nmm. And depositing a first SiOx layer 4 on the amorphous silicon layer 3 by using a plasma enhanced chemical vapor deposition method, wherein the average thickness of the first SiOx layer 4 is 30 nm. Next, a microcrystalline silicon layer 5 was deposited on the first SiOx layer 4 using a plasma enhanced chemical vapor deposition method, wherein the microcrystalline silicon layer 5 had an average thickness of 12 nm. Finally, a second SiOx layer 6 is deposited on the microcrystalline silicon layer 5 by plasma enhanced chemical vapour deposition with a thickness of 50-55 nm.
The unidirectional light-transmitting glass prepared in the example was subjected to optical property detection, and the test results were as follows:
visible light transmittance of the second SiOx layer (observation surface): 8.3%, transmission color: a ═ -3.2, b ═ -5.7;
light reflectance of the second SiOx layer (observation surface): 2.6%, reflection color: a-16.1, b-12.8;
light reflectance on (1) surface (observation target surface) of glass substrate 1: 69%, reflection color: a ═ 1.6, b ═ 3.7;
it can be seen from above result, the utility model provides an one-way printing opacity glass can improve the reflectivity of observing object face light, reduces the light reflectivity of observation face simultaneously to reduce the one-way perspective glass of observing the interference. Meanwhile, the composite dielectric layer 2, the amorphous silicon layer 3, the first SiOx layer 4, the microcrystalline silicon layer 5 and the second SiOx layer 6 can be deposited in sequence in the same deposition equipment by a plasma enhanced chemical vapor deposition method, and glass does not need to be transferred in the preparation process of each layer of film. Additionally, the utility model provides a one-way perspective glass forms through the direct deposit of multilayer structure stack, and its sound construction, compactness, simple. Particularly, each layer structure does not contain a metal layer, so that the problem of oxidation failure of the metal layer in the conventional unidirectional glass can be effectively solved.
The utility model discloses a core: the optical device with the asymmetric structure is formed by combining different refractive indexes among layers and the thicknesses of the layers, and the two surfaces have different reflectivities to light by using the interference principle of light. If the refractive index of the composite dielectric layer 2 is 1.6-2.2; the refractive index of the amorphous silicon layer 3 is 3.2-3.7, and the two layers of films form a first optical module which plays a role of increasing reflection of light incident from a glass surface; similarly, the refractive index of the first SiOx layer 4 is 1.3-2.3, the refractive index of the microcrystalline silicon layer 5 is 3.6-3.8, and the refractive index of the second SiOx layer 6 is 2.3-2.7, which form a second optical module to further enhance the reflection of light.
In light of the foregoing, it is to be understood that various changes and modifications may be made by those skilled in the art without departing from the spirit and scope of the invention. The technical scope of the present invention is not limited to the content of the specification, and must be determined according to the scope of the claims.
Claims (9)
1. A unidirectional light transmitting glass comprising: the glass substrate, and a composite dielectric layer, an amorphous silicon layer, a first SiOx layer, a microcrystalline silicon layer and a second SiOx layer which are sequentially stacked on the surface of one side of the glass substrate; wherein the composite dielectric layer and the amorphous silicon layer form a first optical module, and the first SiOx layer, the microcrystalline silicon layer and the second SiOx layer form a second optical module; the composite dielectric layer, the amorphous silicon layer, the first SiOx layer, the microcrystalline silicon layer and the second SiOx layer are sequentially deposited on the same side face of the glass substrate.
2. A unidirectional light transmitting glass according to claim 1, wherein: the composite dielectric layer comprises one or more composite films of SiOx, SiNx and SiNyOx.
3. A unidirectional light transmitting glass according to claim 1, wherein: the composite dielectric layer, the amorphous silicon layer, the first SiOx layer, the microcrystalline silicon layer and the second SiOx layer can be deposited by a plasma-enhanced chemical vapor deposition method.
4. A unidirectional light transmitting glass according to claim 1, wherein: the thickness of the composite dielectric layer is 12-20nm, and the refractive index of the composite dielectric layer is 1.6-2.2.
5. A unidirectional light transmitting glass according to claim 1, wherein: the thickness of the amorphous silicon layer is 20-35nm, and the refractive index is 3.2-3.7.
6. A unidirectional light transmitting glass according to claim 1, wherein: the thickness of the first SiOx layer is 20-40nm, and the refractive index is 1.3-2.3.
7. A unidirectional light transmitting glass according to claim 1, wherein: the thickness of the microcrystalline silicon layer is 10-15nm, and the refractive index is 3.6-3.8.
8. A unidirectional light transmitting glass according to claim 1, wherein: the second SiOx layer has a thickness of 40-80nm and a refractive index of 2.3-2.7.
9. A unidirectional light transmitting glass according to claim 1, wherein: the crystallization rate of the microcrystalline silicon layer is 5-15%.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921509890.3U CN210711286U (en) | 2019-09-11 | 2019-09-11 | One-way light-transmitting glass |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201921509890.3U CN210711286U (en) | 2019-09-11 | 2019-09-11 | One-way light-transmitting glass |
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| CN210711286U true CN210711286U (en) | 2020-06-09 |
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| CN201921509890.3U Expired - Fee Related CN210711286U (en) | 2019-09-11 | 2019-09-11 | One-way light-transmitting glass |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110550868A (en) * | 2019-09-11 | 2019-12-10 | 江西科技学院 | Unidirectional light-transmitting glass and preparation method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110550868A (en) * | 2019-09-11 | 2019-12-10 | 江西科技学院 | Unidirectional light-transmitting glass and preparation method thereof |
| CN110550868B (en) * | 2019-09-11 | 2021-12-10 | 江西科技学院 | Unidirectional light-transmitting glass and preparation method thereof |
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Granted publication date: 20200609 Termination date: 20200911 |