CN210640270U - LED display chip - Google Patents
LED display chip Download PDFInfo
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- CN210640270U CN210640270U CN201922211326.XU CN201922211326U CN210640270U CN 210640270 U CN210640270 U CN 210640270U CN 201922211326 U CN201922211326 U CN 201922211326U CN 210640270 U CN210640270 U CN 210640270U
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Abstract
The utility model relates to the field of semiconductor technology, specifically disclose a LED display chip, wherein, include: the substrate, set gradually first conductive type gallium nitride layer, quantum well layer and second conductive type gallium nitride layer on the substrate, set up transparent electrode layer on the second conductive type gallium nitride layer, set up the pad electrode layer on the transparent electrode layer, the pad electrode layer includes a plurality of pad electrodes, the pad electrode layer respectively with first conductive type gallium nitride layer with transparent electrode layer connects. The utility model also discloses a LED display chip's manufacturing method. The utility model provides a LED display chip can realize the demonstration of super little interval to for the miniaturized realization of chip provides the basis.
Description
Technical Field
The utility model relates to the field of semiconductor technology, especially, relate to a LED display chip.
Background
The conventional LED chip is a single unit, as shown in fig. 1, and can only be controlled as a single light emitter, so that when a plurality of units are combined together, because the adjacent units need a space, the occupied space is very large, which is not favorable for the development trend of chip miniaturization.
Disclosure of Invention
The utility model provides a LED display chip and LED display chip's manufacturing method solves the problem that the chip that exists is single unit among the correlation technique.
As a first aspect of the present invention, there is provided an LED display chip, wherein, including: the substrate, set gradually first conductive type gallium nitride layer, quantum well layer and second conductive type gallium nitride layer on the substrate, set up transparent electrode layer on the second conductive type gallium nitride layer, set up the pad electrode layer on the transparent electrode layer, the pad electrode layer includes a plurality of pad electrodes, the pad electrode layer respectively with first conductive type gallium nitride layer with transparent electrode layer connects.
Further, the pad electrode layer comprises a first pad electrode, a second pad electrode and a third pad electrode, the first pad electrode and the second pad electrode are connected with the transparent electrode layer, and the third pad electrode is connected with the first conductive type gallium nitride layer.
Further, the third pad electrode is connected to the first conductivity type gallium nitride layer through a via hole penetrating through the quantum well layer and the second conductivity type gallium nitride layer.
Furthermore, an insulating layer is arranged between the pad electrode layer and the transparent electrode layer, and insulating layers are arranged on the side walls of the through holes.
Further, the LED display chip comprises an N-type LED display chip and a P-type LED display chip, when the LED display chip is the N-type LED display chip, the first conduction type is N-type, and the second conduction type is P-type; when the LED display chip is a P-type LED display chip, the first conduction type is P-type, and the second conduction type is N-type.
Further, the substrate comprises a sapphire substrate.
As another aspect of the present invention, there is provided a method for manufacturing an LED display chip, including:
providing a substrate;
growing a first conductive type gallium nitride layer, a quantum well layer and a second conductive type gallium nitride layer on the substrate in sequence;
etching the quantum well layer and the second conductive type gallium nitride layer to expose the first conductive type gallium nitride layer;
manufacturing a transparent electrode layer on the second conductive type gallium nitride layer;
manufacturing an insulating layer on the transparent electrode layer;
and manufacturing a pad electrode layer on the insulating layer, wherein the pad electrode layer is connected with the first conductive type gallium nitride layer and the transparent electrode layer.
Further, the etching the quantum well layer and the second conductive type gallium nitride layer to expose the first conductive type gallium nitride layer includes:
coating photoresist on the second conductive type gallium nitride layer;
illuminating the photoresist according to the mask pattern;
and etching the illuminated quantum well layer and the second conduction type gallium nitride layer to expose the first conduction type gallium nitride layer.
Further, the manufacturing of a pad electrode layer on the insulating layer, wherein the pad electrode layer is connected to the first conductive type gallium nitride layer and the transparent electrode layer, includes:
manufacturing a pad electrode pattern according to a photoresist mask technology;
manufacturing a pad electrode on the insulating layer through an electron beam evaporation device and the pad electrode pattern, wherein the pad electrode comprises a first pad electrode, a second pad electrode and a third pad electrode; the first pad electrode and the second pad electrode are both connected with the transparent electrode layer, and the third pad electrode is connected with the first conductive type gallium nitride layer.
Further, the pad electrode includes Cr, Al, Ti, Pt, Ni, and Au sequentially disposed on the insulating layer.
Through above-mentioned LED display chip, set up a plurality of pad electrodes at the pad electrode layer, and the pad electrode layer is connected with your type gallium nitride layer of first suspender and transparent electrode layer respectively, sets up a plurality of pad electrodes on same LED display chip, and a plurality of pad electrodes can the independent control respectively, and the demonstration of super small interval can be realized to this kind of LED display chip to the realization for the chip miniaturization provides the basis.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
fig. 1 is a schematic structural diagram of an LED chip in the prior art.
Fig. 2 is a cross-sectional view of the LED display chip provided by the present invention.
Fig. 3 is a top view of the LED display chip provided by the present invention.
Fig. 4 is a top view of the exposed N-GaN layer after etching in the manufacturing process of the LED display chip provided by the present invention.
Fig. 5 is a top view of the transparent electrode layer after corroding the insulating layer in the manufacturing process of the LED display chip.
Fig. 6 is a top view of the insulating layer after the insulating layer is etched by the BOE solution.
Fig. 7 is a top view of the LED display chip after the pad electrode is fabricated in the fabrication process.
Fig. 8 is a schematic diagram of a pad surface of an LED display chip according to the present invention.
Fig. 9 is a schematic diagram of a light emitting surface of the LED display chip according to the present invention.
Detailed Description
It should be noted that the embodiments and features of the embodiments of the present invention may be combined with each other without conflict. The present invention will be described in detail below with reference to the accompanying drawings in conjunction with embodiments.
In order to make the technical solution of the present invention better understood, the technical solution of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts shall belong to the protection scope of the present invention.
It should be noted that the terms "first," "second," and the like in the description and claims of the present invention and in the drawings described above are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged under appropriate circumstances for purposes of describing the embodiments of the invention herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
In the present embodiment, an LED display chip is provided, and fig. 1 and 2 are a cross-sectional view and a top view according to an embodiment of the present invention, as shown in fig. 2 and 3, including: the substrate 1, set gradually first conductive type gallium nitride layer 2, quantum well layer 3 and second conductive type gallium nitride layer 4 on the substrate 1, set up transparent electrode layer 5 on the second conductive type gallium nitride layer 4, set up the pad electrode layer on the transparent electrode layer 5, the pad electrode layer includes a plurality of pad electrodes, the pad electrode layer respectively with first conductive type gallium nitride layer 2 with transparent electrode layer 5 connects.
Through above-mentioned LED display chip, set up a plurality of pad electrodes at the pad electrode layer, and the pad electrode layer is connected with your type gallium nitride layer of first suspender and transparent electrode layer respectively, sets up a plurality of pad electrodes on same LED display chip, and a plurality of pad electrodes can the independent control respectively, and the demonstration of super small interval can be realized to this kind of LED display chip to the realization for the chip miniaturization provides the basis.
Specifically, as shown in fig. 2 and 3, the pad electrode layer includes a first pad electrode 7, a second pad electrode 8, and a third pad electrode 9, the first pad electrode 7 and the second pad electrode 8 are both connected to the transparent electrode layer 5, and the third pad electrode 9 is connected to the first conductive type gallium nitride layer 2.
Specifically, the third pad electrode 9 is connected to the first conductivity type gallium nitride layer 2 through a via hole 10, where the via hole 10 penetrates through the quantum well layer 3 and the second conductivity type gallium nitride layer 4.
Specifically, an insulating layer 6 is arranged between the pad electrode layer and the transparent electrode layer 5, and the insulating layer 6 is arranged on the side wall of each through hole 10.
Specifically, the LED display chip includes an N-type LED display chip and a P-type LED display chip, and when the LED display chip is the N-type LED display chip, the first conductivity type is an N-type, and the second conductivity type is a P-type; when the LED display chip is a P-type LED display chip, the first conduction type is P-type, and the second conduction type is N-type.
Preferably, the first conductive type gallium nitride layer includes N-GaN, and the second conductive type gallium nitride layer includes P-N-GaN.
Preferably, the substrate comprises a sapphire substrate.
As another embodiment of the present invention, a method for manufacturing an LED display chip is provided, which includes:
providing a substrate;
growing a first conductive type gallium nitride layer, a quantum well layer and a second conductive type gallium nitride layer on the substrate in sequence;
etching the quantum well layer and the second conductive type gallium nitride layer to expose the first conductive type gallium nitride layer;
manufacturing a transparent electrode layer on the second conductive type gallium nitride layer;
manufacturing an insulating layer on the transparent electrode layer;
and manufacturing a pad electrode layer on the insulating layer, wherein the pad electrode layer is connected with the first conductive type gallium nitride layer and the transparent electrode layer.
According to the LED display chip manufactured by the manufacturing method of the LED display chip, the pad electrode layers are provided with the plurality of pad electrodes, the pad electrode layers are respectively connected with the first sling type gallium nitride layer and the transparent electrode layer, the plurality of pad electrodes are arranged on the same LED display chip and can be independently controlled, and the LED display chip can realize display at ultra-small intervals, so that a foundation is provided for realizing miniaturization of the chip. The manufacturing method of the LED display chip is simple in manufacturing process and easy to realize.
Specifically, the etching the quantum well layer and the second conductive type gallium nitride layer to expose the first conductive type gallium nitride layer includes:
coating photoresist on the second conductive type gallium nitride layer;
illuminating the photoresist according to the mask pattern;
and etching the illuminated quantum well layer and the second conduction type gallium nitride layer to expose the first conduction type gallium nitride layer.
Specifically, the fabricating a pad electrode layer on the insulating layer, wherein the pad electrode layer is connected to the first conductive type gallium nitride layer and the transparent electrode layer, includes:
manufacturing a pad electrode pattern according to a photoresist mask technology;
manufacturing a pad electrode on the insulating layer through an electron beam evaporation device and the pad electrode pattern, wherein the pad electrode comprises a first pad electrode, a second pad electrode and a third pad electrode; the first pad electrode and the second pad electrode are both connected with the transparent electrode layer, and the third pad electrode is connected with the first conductive type gallium nitride layer.
Preferably, the pad electrode includes Cr, Al, Ti, Pt, Ni, and Au sequentially disposed on the insulating layer.
The following describes in detail a method for manufacturing an LED display chip according to an embodiment of the present invention with reference to fig. 3 to 7.
It should be noted that in this embodiment, the first conductivity type gallium nitride layer includes N-GaN, the second conductivity type gallium nitride layer includes P-N-GaN, and the substrate is a sapphire substrate.
Step 1: an N-GaN layer, a quantum well, a P-GaN layer and an integral LED epitaxial structure are sequentially grown on a sapphire substrate by using MOCVD equipment, and the light-emitting wavelength can be changed by changing the temperature and In and Al components In the growth process of the quantum well.
Step 2: manufacturing a mask pattern by using a positive photoresist mask technology, and etching the N-GaN layer of the exposed area by using an ICP (inductively coupled plasma) etching technology; as shown in fig. 4.
And step 3: making an ITO (indium tin oxide) transparent conductive layer by using an electron beam coating or magnetron sputtering technology, making a corrosion pattern by using a positive photoresist mask technology, and etching the pattern of the insulating layer by using an ITO solution; as shown in fig. 5.
And 4, step 4: preparing a SiO2/SiNx insulating layer on the surface of a wafer by using a PECVD (plasma enhanced chemical vapor deposition) technology, manufacturing a corrosion pattern by using a positive photoresist mask technology, and performing through hole corrosion on the insulating layer by using a BOE (biaxially oriented electrical) solution; as shown in fig. 6.
And 5: manufacturing a pad electrode pattern by using a negative photoresist mask technology again, manufacturing a pad electrode by using electron beam evaporation equipment, wherein the metal layer is Cr/Al/Ti/Pt/Ni/Au/, and the thickness of Ni is not less than 300 nm; as shown in fig. 7.
Step 6: thinning the wafer to 100-200 um by using thinning and grinding equipment;
and 7: cutting devices on the wafer by using a laser technology, and separating chips by using a splitting technology;
and 8: and testing and classifying the photoelectric parameters of the cut chips through a probe station and sorting machine equipment. The schematic diagram of the bonding pad surface of the finally manufactured LED display chip is shown in fig. 8, and the schematic diagram of the light-emitting surface is shown in fig. 9.
Compared with the graph 1 in fig. 3, one chip is designed into three-in-one LED chip structure driven by three common cathodes, and three-region independent control of one chip can be realized by matching with customized driving, so as to provide an effective solution for ultra-small-pitch display application.
It is to be understood that the above embodiments are merely exemplary embodiments that have been employed to illustrate the principles of the present invention, and that the present invention is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (6)
1. An LED display chip, comprising: the substrate, set gradually first conductive type gallium nitride layer, quantum well layer and second conductive type gallium nitride layer on the substrate, set up transparent electrode layer on the second conductive type gallium nitride layer, set up the pad electrode layer on the transparent electrode layer, the pad electrode layer includes a plurality of pad electrodes, the pad electrode layer respectively with first conductive type gallium nitride layer with transparent electrode layer connects.
2. The LED display chip of claim 1, wherein the pad electrode layer comprises a first pad electrode, a second pad electrode, and a third pad electrode, the first pad electrode and the second pad electrode are both connected to the transparent electrode layer, and the third pad electrode is connected to the first conductivity type gallium nitride layer.
3. The LED display chip of claim 2, wherein the third pad electrode is connected to the first conductivity type gallium nitride layer through a via hole, wherein the via hole penetrates through the quantum well layer and the second conductivity type gallium nitride layer.
4. The LED display chip of claim 3, wherein an insulating layer is disposed between the pad electrode layer and the transparent electrode layer, and an insulating layer is disposed on each sidewall of the through hole.
5. The LED display chip according to any one of claims 1 to 4, wherein the LED display chip comprises an N-type LED display chip and a P-type LED display chip, and when the LED display chip is the N-type LED display chip, the first conductivity type is N-type and the second conductivity type is P-type; when the LED display chip is a P-type LED display chip, the first conduction type is P-type, and the second conduction type is N-type.
6. The LED display chip of claim 1, wherein said substrate comprises a sapphire substrate.
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| CN201922211326.XU CN210640270U (en) | 2019-12-11 | 2019-12-11 | LED display chip |
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| CN201922211326.XU CN210640270U (en) | 2019-12-11 | 2019-12-11 | LED display chip |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110767794A (en) * | 2019-12-11 | 2020-02-07 | 江苏新广联科技股份有限公司 | LED display chip and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110767794A (en) * | 2019-12-11 | 2020-02-07 | 江苏新广联科技股份有限公司 | LED display chip and manufacturing method thereof |
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