CN210628720U - Semiconductor laser module and medical laser light source - Google Patents
Semiconductor laser module and medical laser light source Download PDFInfo
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- CN210628720U CN210628720U CN201921419394.9U CN201921419394U CN210628720U CN 210628720 U CN210628720 U CN 210628720U CN 201921419394 U CN201921419394 U CN 201921419394U CN 210628720 U CN210628720 U CN 210628720U
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Abstract
The utility model provides a semiconductor laser module and a medical laser light source, which comprises a semiconductor laser stack array consisting of at least 2 semiconductor laser bars, a fast axis collimating lens and a light-emitting window sheet which are arranged in the laser light-emitting direction in sequence; the light-emitting window piece is arranged at a geometric connection critical position where energy superposition is not generated and which is emitted by different laser bars, or at any position behind the geometric connection critical position. Based on the utility model provides a semiconductor laser module has reduced the volume of semiconductor laser module greatly under the prerequisite of having guaranteed the facula degree of consistency, has improved the flexibility of light source for the medical treatment.
Description
Technical Field
The utility model relates to a semiconductor laser field especially relates to a semiconductor laser module and laser light source of medical treatment usefulness.
Background
Laser medicine is currently rapidly developing as an important field of laser applications. The semiconductor laser has the characteristics of small volume, light weight, long service life and wide wavelength coverage, and is particularly suitable for medical equipment.
For a traditional optical solution of laser medical treatment, a laser output light spot needs to pass through a series of complex optical systems, so that the light spot can reach an applicable state, common optical systems are optical waveguides, multi-lens systems and the like, and due to the size, energy and technical limitations of the laser, the optical systems are often large in size, complex in structure, high in cost and the like, and the application of a terminal medical module is limited.
SUMMERY OF THE UTILITY MODEL
In order to solve the above problem, an object of the present invention is to provide a semiconductor laser module, which adopts a simplified optical system, and greatly reduces the volume of the semiconductor laser module on the premise of ensuring the uniformity of light spots, thereby improving the flexibility of the medical light source.
The technical scheme of the utility model as follows:
a semiconductor laser module comprises a semiconductor laser stacked array consisting of at least 2 semiconductor laser bars and a light-emitting window sheet arranged in the light-emitting direction of laser;
the light-emitting window piece is arranged at a geometric connection critical position where energy superposition is not generated and which is emitted by different laser bars, or at any position behind the geometric connection critical position.
The semiconductor laser module further comprises a fast axis collimating lens positioned between the semiconductor laser stack array and the light-emitting window, and the fast axis divergence angle of the laser beam collimated by the fast axis collimating lens is 2-25 degrees.
The fast axis collimating lens is a hyperbolic aspheric lens, or a cylindrical lens, or an ellipsoidal aspheric lens.
The fast axis collimating lens is a lens corresponding to the laser bars one by one, or a micro lens array with the same number of the laser bars.
The semiconductor laser stacked array comprises n laser bars, wherein n is more than or equal to 3; the light-emitting window sheet is arranged between the critical position of the geometrical connection of the laser beams emitted by different laser bars and the critical position of the n-1 times of energy superposition and the n times of energy superposition of the laser beams emitted by different bars.
The semiconductor laser stack array comprises at least 5 bars, and the light-emitting window sheet is arranged between the critical position of the geometric connection of the laser beams emitted by the different bars and the critical position of the triple energy superposition and the quadruple energy superposition of the laser beams emitted by the different bars.
The position of the light-emitting window sheet is a geometric connection critical position of laser beams emitted by different laser bars, or a critical position of secondary energy superposition and tertiary energy superposition of the laser beams emitted by different laser bars, or a critical position of the tertiary energy superposition and the quaternary energy superposition of the laser beams emitted by different laser bars, or a superposition position of half-height width of energy intensity distribution of the laser beams emitted by different laser bars.
The distance between the position of the light-emitting window piece and the light-emitting position of the laser bar is a function of the divergence angle of the light-emitting position of the laser bar and the chip distance between the adjacent laser bars.
The utility model provides a laser light source for medical treatment, has used above-mentioned semiconductor laser module, still includes the casing, the casing is including placing the holding chamber of above-mentioned semiconductor laser module, and forms hollow fixed slot around the light-emitting window slice and be used for fixed light-emitting window slice.
The semiconductor laser module comprises at least two semiconductor laser stacked arrays, and the semiconductor laser stacked arrays are arranged and expanded to be area array light sources along the stacking direction of the laser bars or the vertical direction of the stacking direction.
The utility model discloses following beneficial effect has: the optical system only adopts the fast axis collimating lens, and the collimated light directly passes through the light-emitting window sheet for emitting, so that the traditional optical waveguide is not used, the volume of the semiconductor laser module is greatly reduced on the premise of ensuring the uniformity of light spots, the flexibility of a medical light source is improved, the power expansion of the semiconductor laser module is easy to realize, and the application cost is reduced.
Drawings
Fig. 1 is a schematic structural diagram of the semiconductor laser module of the present invention.
Fig. 2 is the superposition schematic diagram of the laser beams emitted by the different laser bars of the utility model.
Fig. 3 shows an embodiment in which the fast axis collimating lens is a microlens array.
Fig. 4 is an embodiment in which the fast axis collimating lens is a single microlens assembly.
Fig. 5 is a schematic structural diagram of the medical laser light source provided by the present invention.
The reference numbers illustrate: the laser device comprises a 1-semiconductor laser stacked array, a 2-light-emitting window, a 3-laser bar, a 4-fast axis collimating lens, a 5-geometric connection critical position, a 6-critical position of secondary energy superposition and tertiary energy superposition, a critical position of 7-tertiary energy superposition and quaternary energy superposition, an 8-half-height-width superposition position, a 9-shell and a 10-window refrigeration structure.
Detailed Description
In order to make the technical solutions of the present invention better understood, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The semiconductor laser module of the utility model comprises a semiconductor laser stack array 1 consisting of at least 2 semiconductor laser bars 3, a fast axis collimating lens 4 and a light-emitting window 2 which are arranged in the laser light-emitting direction in sequence; the light-emitting window piece 2 is arranged at the geometric connection critical position 5 which is not subjected to energy superposition and emits laser beams by different laser bars or any position behind the geometric connection critical position.
As shown in fig. 2, the critical position 5 of geometric connection means a laser beam which is collimated by the fast axis collimator 4 and still has a certain divergence angle, and on the beam propagation path, the critical position where the adjacent laser beams are converged or superposed for the first time is understood as the critical position of geometric connection. It should be noted that, at the critical position of geometric connection, the boundaries of adjacent laser beams are connected but there is no energy superposition, and since the energy distribution of a single laser beam is generally gaussian distribution, the energy distribution of the light spots of the stacked array of semiconductor lasers at this position is a strip-shaped sequence of light spots with alternating bright and dark distributions.
In order to obtain more uniform light spots to be suitable for the medical field, the fast axis collimating lens 4 can adopt a hyperbolic aspheric lens to obtain single laser beams with flat tops uniformly distributed, so that the semiconductor laser stacked array obtains uniform light spots available for medical application at the geometric connection critical position. The advantage of this embodiment is for having adopted simple optical system, and the position of light-emitting window piece compares the great shortening of traditional scheme with the distance of semiconductor laser stack array for the volume of semiconductor laser module reduces in medical treatment application, has improved the flexibility, the cost is reduced. The present application refers to medical applications, in particular to skin treatment applications such as hair removal.
Furthermore, the semiconductor laser stacked array comprises n laser bars, wherein n is more than or equal to 3; the light-emitting window piece 2 is arranged between a geometric connection critical position 5 where different laser bars 3 emit laser beams and a critical position where n-1 times of energy superposition and n times of energy superposition of the laser beams emitted by the different bars are performed, wherein the number n of the energy superposition is consistent with the number n of the laser bars, and n is a natural number. The laser beams emitted by the plurality of laser bars are overlapped with adjacent and non-adjacent laser beams from the geometrical connection critical position 5 in the light path transmission, the farther the position of the light spot is away from the laser light emitting point, the highest light spot with n times of energy overlapping can appear, the light spot at the critical position with n times of energy overlapping is generally in typical Gaussian distribution and is limited in medical or industrial application, so the farthest position of the light emitting window sheet 2 is generally not more than the critical position of n-1 times of energy overlapping and n times of energy overlapping.
It should be noted that:
1) the n-time energy superposition is understood as that n laser beams are subjected to energy superposition, and does not mean that the energy is multiplied, and the superposition energy of light spots in an n-time energy superposition area is changed.
2) The critical position of the n-1 times of energy superposition and the n times of energy superposition is understood to mean that the critical position of the n-1 laser beams in which the energy superposition occurs but the energy superposition of the n laser beams does not occur yet exists.
Specifically, the value of n is preferably 5. The semiconductor laser stacked array 1 comprises at least 5 laser bars, and the light-emitting window piece 2 is arranged between a geometric connection critical position 5 where different laser bars 3 emit laser beams and a critical position where the different laser bars emit the laser beams, wherein 4 times of energy superposition and 5 times of energy superposition are carried out; further, as shown in fig. 2, due to the requirement of laser medical treatment on uniformity of the light spot, the light-exiting window 2 is preferably disposed between the critical position of geometric connection of the laser beams emitted by the different laser bars 3 and the critical position of the triple energy superposition and the quadruple energy superposition of the laser beams emitted by the different laser bars. The critical position of the third energy superposition and the fourth energy superposition can be understood as that only the third energy superposition of the light spot exists at the position, the fourth energy superposition of the energy is not generated, the boundaries of the light beams of the third energy superposition are connected, and the light spot energy distribution on the light-emitting window sheet is relatively uniform flat-top distribution.
It should be noted that, when the light-exiting window 2 is at an interval position between a geometric connection critical position where the laser beams are emitted by different bars and a critical position where the laser beams are emitted by different bars and energy superposition occurs for four times, the light spot energy is adjusted along with the position of the light-exiting window, and the uniformity of the light spot may be different, for example, the light spot is a light and dark stripe spot in some positions, but the width of the bright stripe is much greater than that of the dark stripe, so that the light spot energy is approximately uniform energy distribution, and the application in medical treatment or industry is not affected.
As an optimal embodiment of the present invention, the optimal position of the light-emitting window 2 is
1) The critical position 5 of the geometrical connection of the laser beams emitted by the different laser bars is understood as the critical position where adjacent laser beams meet or overlap for the first time on the propagation paths of the different laser beams, and the boundaries of the adjacent laser beams are connected but no energy is overlapped.
2) The critical position 6 of the secondary energy superposition and the tertiary energy superposition of the laser beams emitted by different laser bars is understood as that only two times of superposition of the spot energy exist at the position, the tertiary energy superposition does not exist yet, and the boundaries of the beams of the two times of energy superposition are connected; further, two energy stacks may also be understood as the presence of only two intersections or stacks of adjacent laser bars.
3) Critical positions 7 of the triple energy superposition and the quadruple energy superposition of laser beams emitted by different laser bars; there is only a third superposition of spot energies at this location, no fourth superposition of energies has yet occurred, and the boundaries of the beams of the third energy superposition are connected. The premise of the three-time superposition is that the semiconductor laser stack array at least comprises 3 laser bars, the laser beams emitted by the adjacent 3 laser bars are inevitably converged by 3 laser beams in the propagation direction due to the divergence angle, and the convergence area is a three-time superposition area of the light spot energy.
4) The light-emitting window piece 2 can also be positioned at a superposition position 8 of the full width at half maximum of the energy intensity distribution of the laser beams emitted by different bars.
The overlapped light spot boundaries at the first three critical positions are connected, and the light spot energy distribution on the light-emitting window sheet is relatively uniform flat-top distribution or approximately uniform flat-top distribution, so that excellent hair removal and other skin treatment effects can be realized. And 4) the position is not a critical position of typical boundary connection, but the energy of the light spot at the position is more uniform, and the position can be used as a preferable position for medical application.
It should be noted that, the distance from the position of the light-exiting window 2 to the light-exiting position of the laser bar is related to the focal length of the fast-axis collimating lens, the chip divergence angle of the laser bar, and the chip spacing between adjacent laser bars, and it can be understood that the distance from the position of the light-exiting window 2 to the light-exiting position of the fast-axis collimating lens is a function of the focal length of the fast-axis collimating lens, the chip divergence angle of the laser bar, and the chip spacing between adjacent laser bars. Generally, the position of the light-exiting window is in negative correlation with the divergence angle and in positive correlation with the chip spacing of the adjacent laser bars, and it is understood that the larger the divergence angle or the chip spacing is, the closer the light-exiting window is to the laser bars.
Specifically, the distance L between the geometric connection critical position 5 and the light-emitting surface of the fast-axis collimating lens is denoted by fig. 21The distance L between the critical position 6 of the secondary energy superposition and the tertiary energy superposition and the light-emitting surface of the fast axis collimating lens3And the distance L between the critical position 7 of the triple energy superposition and the quartic energy superposition and the light-emitting surface of the fast axis collimating lens4The relationship is illustrated by way of example:
L1= f(P-D) / [2* tg(θ0/2) *(2f-Δ)]
L3= f(2P-D)/ [2* tg(θ0/2) *(2f-Δ)]
L4= f(3P-D)/ [2* tg(θ0/2) *(2f-Δ)]
wherein f is the focal length of the fast axis collimating lens, P is the chip distance of the adjacent laser bars, D is the clear aperture of the fast axis collimating lens, theta0For the chip divergence angle of laser barre, delta is out of focus volume, for guaranteeing there is the divergence angle in the laser beam after the collimation of fast axis collimating mirror, the utility model provides a delta is positive.
It should be noted that the fast axis collimating lens is not absolutely collimated for processing the laser beam, but compresses the laser beam from the original divergence angle (generally 45 ° to 70 °) of the chip to obtain the laser beam still having a certain divergence angle, so that the laser beam will emit energy superposition during propagation. Preferably, the fast axis divergence angle of the laser beam after being collimated by the fast axis collimating lens is between 2 ° and 25 °. The fast axis collimating lens may also be omitted if the original divergence angle of the laser chip can be achieved between 2 ° and 25 °.
Based on the function of the fast axis collimating lens, the fast axis collimating lens is a hyperbolic aspheric lens, a cylindrical lens or an ellipsoidal aspheric lens.
Further, as shown in fig. 4, the fast axis collimating lens 4 is a micro lens corresponding to the laser bars one by one, and is installed in the light-emitting direction of the laser bars of the semiconductor laser stacked array one by one in the form of a single lens; or the fast axis collimating lens 4 shown in fig. 3 may also be a microlens array with the same number as the laser bars, and the microlens array agrees to be installed in the light-emitting direction of the semiconductor laser stack. The fast axis collimating lens can be adhered to the semiconductor laser and also can be clamped at a position with a certain distance from the semiconductor laser through an external fixing piece.
Based on above-mentioned semiconductor laser module, the utility model provides a laser light source is used in medical treatment. As shown in fig. 5, the medical laser light source further includes a housing 9, the housing includes an accommodating cavity for accommodating the semiconductor laser module, and hollow fixing grooves are formed around the light-emitting window pieces for fixing the light-emitting window pieces 2.
Specifically, the diameter of the housing 9 is matched with the size of the stacked semiconductor laser array and the size of the light exit window, and a gradually changing diameter can be adopted. As shown in fig. 5, in some embodiments, the width of the semiconductor laser stack 1 in the slow axis direction is greater than that of the light exit window 2, so that the width of the rear portion of the housing (the rear width position refers to the width of the accommodating cavity of the semiconductor laser module) is greater than that of the front portion (the front width position refers to the position of the housing where the light exit window is fixed).
Specifically, the medical laser light source further comprises a window piece refrigerating structure 10, wherein the inner diameter of the window piece refrigerating structure 10 is hollow and is matched with the light outlet window piece, so that the light outlet window piece is embedded in the window piece refrigerating structure; the outer diameter of the window cooling structure is matched with the hollow fixing groove at the front end of the shell and is fixed on the fixing groove of the shell 9.
Further, the semiconductor laser module includes at least two semiconductor laser stack 1, semiconductor laser stack arranges along the vertical direction of the direction of piling up or piling up the direction of laser barwood and expands to the area array light source, can understand that semiconductor laser stack expands along its laser fast axis and slow axis direction and forms the area array, and is concrete, and the range of adjacent semiconductor laser stack can be certain contained angle to optimize the facula energy density and the homogeneity of area array light source. The medical laser light source provided by the embodiment increases the flexibility of power expansion of the medical light source (especially a depilation light source), and the power expanded light source is easy to implement due to the simplified optical element, so that the quality of light spots is ensured, the expansion cost is reduced, and the medical laser light source has a larger market application value.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Various modifications and changes may occur to those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A semiconductor laser module is characterized by comprising a semiconductor laser stacked array consisting of at least 2 semiconductor laser bars and a light-emitting window sheet arranged in the light-emitting direction of laser;
the light-emitting window piece is arranged at a geometric connection critical position where energy superposition is not generated and which is emitted by different laser bars, or at any position behind the geometric connection critical position.
2. The semiconductor laser module of claim 1, further comprising a fast axis collimating lens positioned between the stack of semiconductor lasers and the exit window, wherein the fast axis divergence of the laser beam collimated by the fast axis collimating lens is between 2 ° and 25 °.
3. The semiconductor laser module of claim 2, wherein the fast axis collimating lens is a hyperbolic aspheric lens, or a cylindrical lens, or an ellipsoidal aspheric lens.
4. The semiconductor laser module of claim 3, wherein the fast axis collimating lens is a one-to-one lens corresponding to the laser bars, or a micro lens array having the same number of laser bars.
5. The semiconductor laser module of any of claims 1-4, wherein the semiconductor laser stack comprises n laser bars, where n ≧ 3; the light-emitting window sheet is arranged between the critical position of the geometrical connection of the laser beams emitted by different laser bars and the critical position of the n-1 times of energy superposition and the n times of energy superposition of the laser beams emitted by different bars.
6. The semiconductor laser module of claim 5, wherein the semiconductor laser stack comprises at least 5 bars, and the light exit window is disposed between a critical position of geometric connection where the different bars emit the laser beams and a critical position of triple energy superposition and quadruple energy superposition where the different bars emit the laser beams.
7. The semiconductor laser module of claim 6, wherein the position of the light-exiting window is a geometric connection critical position of the laser beams emitted by the different laser bars, or a critical position of the secondary energy superposition and the tertiary energy superposition of the laser beams emitted by the different laser bars, or a critical position of the tertiary energy superposition and the quaternary energy superposition of the laser beams emitted by the different laser bars, or a superposition position of the half-width of the energy intensity distribution of the laser beams emitted by the different bars.
8. The semiconductor laser module of claim 1, wherein the position of the exit window is a distance from where the laser bars exit as a function of a divergence angle of where the laser bars exit and a chip pitch of adjacent laser bars.
9. A medical laser light source, wherein the semiconductor laser module according to any one of claims 1 to 8 is applied, the medical laser light source further comprises a housing, the housing comprises an accommodating cavity for accommodating the semiconductor laser module, and a hollow fixing groove is formed around the light-emitting window sheet for fixing the light-emitting window sheet.
10. The medical laser light source according to claim 9, wherein the semiconductor laser module comprises at least two semiconductor laser stacks, and the semiconductor laser stacks are arranged and expanded in a stacking direction of the laser bars or a direction perpendicular to the stacking direction to form an area array light source.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201921419394.9U CN210628720U (en) | 2019-08-29 | 2019-08-29 | Semiconductor laser module and medical laser light source |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201921419394.9U CN210628720U (en) | 2019-08-29 | 2019-08-29 | Semiconductor laser module and medical laser light source |
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| CN210628720U true CN210628720U (en) | 2020-05-26 |
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| CN201921419394.9U Active CN210628720U (en) | 2019-08-29 | 2019-08-29 | Semiconductor laser module and medical laser light source |
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