CN210607311U

CN210607311U - Flip LED packaging structure

Info

Publication number: CN210607311U
Application number: CN201921543180.2U
Authority: CN
Inventors: 李国琪
Original assignee: Hubei Fangjing Electronic Technology Co ltd
Current assignee: Hubei Fangjing Electronic Technology Co ltd
Priority date: 2019-09-17
Filing date: 2019-09-17
Publication date: 2020-05-22
Anticipated expiration: 2029-09-17

Abstract

A flip LED packaging structure comprises a protection diode used for replacing a substrate, wherein the protection diode comprises a P-type silicon material and an N-type silicon material, an upper substrate bonding pad and a lower substrate bonding pad are respectively arranged at the upper end and the lower end of the P-type silicon material and the N-type silicon material, and an LED chip is welded on the upper substrate bonding pad; and a light-transmitting encapsulating device is also arranged on the protection diode. The utility model provides a flip-chip LED packaging structure, simple structure adopts the protection diode as the base plate, has reduced the use of encapsulation support. Adopt LED flip-chip pad to connect, reduce wire welding process, improved welding reliability simultaneously, improve lamp pearl reliability. Meanwhile, the LED generates heat when working, the heat is LED out through the LED and the substrate metal welding layer, the diode silicon material and the substrate lower bonding pad, the LED and the substrate lower bonding pad are all high-heat-conduction materials, the heat resistance is low, the heat conduction is fast, the LED working temperature is effectively reduced, and the LED working life is prolonged.

Description

Flip LED packaging structure

Technical Field

The utility model relates to a flip-chip LED technical field, especially a flip-chip LED packaging structure.

Background

The flip chip assembly is to directly interconnect the components to the substrate downwards through the salient points on the chip, so that the risk of lead disconnection is prevented, and the excellent heat dissipation performance is ensured. In the prior art, most of the packaging of the flip-chip LED needs to use a support, for example, the flip-chip LED support disclosed in the Chinese utility model CN201721059618.0 patent, and the use of the support makes the production process more complicated, and is not beneficial to economic benefits. In the prior art, generally, the support only has two functions, one function is structural support, so that the whole finished product is firmer; and secondly, if the chip size is too small, the size and the spacing of the bonding pads are too small, the bonding pads are not required to be welded, and the size and the spacing of the final bonding pads of the finished product can be expanded by converting the bracket, so that the bonding pads are welded by using the application. The utility model discloses a two above effects can have simultaneously to the base plate, and the utility model discloses a base plate self possess the diode function, have increased protect function to LED's electrical property.

Disclosure of Invention

The utility model aims to solve the technical problem that a flip-chip LED packaging structure is provided, adopt the protection diode to replace the base plate, reducible encapsulation support's use.

In order to solve the technical problem, the utility model discloses the technical scheme who adopts is: a flip LED packaging structure comprises a protection diode used for replacing a substrate, wherein the protection diode comprises a P-type silicon material and an N-type silicon material, an upper substrate bonding pad and a lower substrate bonding pad are respectively arranged at the upper end and the lower end of the P-type silicon material and the N-type silicon material, and an LED chip is welded on the upper substrate bonding pad; and a light-transmitting encapsulating device is also arranged on the protection diode.

Preferably, the LED chip sequentially comprises a sapphire substrate and an N-GaN layer from top to bottom, a quantum trap layer is arranged on one side below the N-GaN layer, a conductive column is arranged on the other side of the N-GaN layer, and a P-GaN layer is arranged under the quantum trap layer.

Preferably, the lower end of the P-GaN layer is provided with an LED negative electrode bonding pad, the lower end of the conductive column is provided with an LED positive electrode bonding pad, and the LED negative electrode bonding pad and the LED positive electrode bonding pad are respectively used for being welded and connected with bonding pads on the substrate at the upper ends of the P-type silicon material and the N-type silicon material.

Preferably, the light-transmitting encapsulating device is a transparent resin glue layer.

Preferably, the substrate upper bonding pad and the substrate lower bonding pad are communicated with the P-type silicon material and the N-type silicon material.

The utility model provides a flip-chip LED packaging structure, simple structure adopts the protection diode as the base plate, has reduced the use of encapsulation support. Adopt LED flip-chip pad to connect, reduce wire welding process, improved welding reliability simultaneously, improve lamp pearl reliability. Meanwhile, the LED generates heat when working, the heat is LED out through the LED and the substrate metal welding layer, the diode silicon material and the substrate lower bonding pad, the LED and the substrate lower bonding pad are all high-heat-conduction materials, the heat resistance is low, the heat conduction is fast, the LED working temperature is effectively reduced, and the LED working life is prolonged.

Drawings

The invention will be further explained with reference to the following figures and examples:

fig. 1 is a schematic structural diagram of the present invention.

Detailed Description

As shown in fig. 1, a flip-chip LED package structure includes a protection diode 1 for replacing a substrate, where the protection diode 1 includes a P-type silicon material 2 and an N-type silicon material 3, a substrate upper bonding pad 5 and a substrate lower bonding pad 4 are respectively disposed at upper and lower ends of the P-type silicon material 2 and the N-type silicon material 3, and an LED chip is welded on the substrate upper bonding pad 5; a light-transmitting encapsulation device 13 is also arranged on the protective diode 1. The protective diode is used as the substrate, so that the use of a packaging support is reduced, and the heat dissipation effect is good.

Preferably, the LED chip sequentially comprises a sapphire substrate 6 and an N-GaN layer 7 from top to bottom, a quantum trap layer 8 is arranged on one side below the N-GaN layer 7, a conductive column 9 is arranged on the other side, and a P-GaN layer 10 is arranged under the quantum trap layer 8. By adopting the packaging structure, the layer thickness of the LED is reduced, and the volume is favorably reduced.

Preferably, the lower end of the P-GaN layer 10 is provided with an LED negative electrode bonding pad 11, the lower end of the conductive column 9 is provided with an LED positive electrode bonding pad 12, and the LED negative electrode bonding pad 11 and the LED positive electrode bonding pad 12 are respectively used for being welded and connected with the substrate upper bonding pad 5 at the upper ends of the P-type silicon material 2 and the N-type silicon material 3.

Preferably, the light-transmitting encapsulating device 13 is a transparent resin glue layer.

Preferably, the substrate upper bonding pad 5 and the substrate lower bonding pad 4 are communicated with the P-type silicon material 2 and the N-type silicon material 3.

When the LED is used, the lower substrate pad at the lower end of the P-type silicon material 2 is used as the cathode of the LED, and the lower substrate pad at the lower end of the N-type silicon material 3 is used as the anode of the LED.

The above-mentioned embodiments are merely preferred embodiments of the present invention, and should not be considered as limitations of the present invention, and the protection scope of the present invention should be defined by the technical solutions described in the claims, and includes equivalent alternatives of technical features in the technical solutions described in the claims. Namely, equivalent alterations and modifications within the scope of the invention are also within the scope of the invention.

Claims

1. The utility model provides a flip-chip LED packaging structure which characterized in that: the LED packaging structure comprises a protection diode (1) used for replacing a substrate, wherein the protection diode (1) comprises a P-type silicon material (2) and an N-type silicon material (3), an upper substrate bonding pad (5) and a lower substrate bonding pad (4) are respectively arranged at the upper end and the lower end of the P-type silicon material (2) and the N-type silicon material (3), and an LED chip is welded on the upper substrate bonding pad (5); a light-transmitting encapsulation device (13) is also arranged on the protection diode (1).

2. The flip-chip LED package structure of claim 1, wherein: the LED chip sequentially comprises a sapphire substrate (6) and an N-GaN layer (7) from top to bottom, a quantum trap layer (8) is arranged on one side below the N-GaN layer (7), a conductive column (9) is arranged on the other side of the N-GaN layer, and a P-GaN layer (10) is arranged under the quantum trap layer (8).

3. The flip-chip LED package structure of claim 2, wherein: the lower end of the P-GaN layer (10) is provided with an LED negative electrode bonding pad (11), the lower end of the conductive column (9) is provided with an LED positive electrode bonding pad (12), and the LED negative electrode bonding pad (11) and the LED positive electrode bonding pad (12) are respectively used for being welded and connected with an upper substrate bonding pad (5) at the upper ends of the P-type silicon material (2) and the N-type silicon material (3).

4. The flip-chip LED package structure of claim 1, wherein: the light-transmitting encapsulating device (13) is a transparent resin glue layer.

5. The flip-chip LED package structure of claim 1, wherein: the substrate upper bonding pad (5) and the substrate lower bonding pad (4) are communicated with the P-type silicon material (2) and the N-type silicon material (3).