CN210607296U - Etching equipment and preparation system for solar silicon wafer - Google Patents
Etching equipment and preparation system for solar silicon wafer Download PDFInfo
- Publication number
- CN210607296U CN210607296U CN201921581221.7U CN201921581221U CN210607296U CN 210607296 U CN210607296 U CN 210607296U CN 201921581221 U CN201921581221 U CN 201921581221U CN 210607296 U CN210607296 U CN 210607296U
- Authority
- CN
- China
- Prior art keywords
- silicon wafer
- etching
- ozone
- solar silicon
- tank
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Weting (AREA)
Abstract
The utility model provides an etching equipment and preparation system of solar energy silicon chip, etching equipment includes: the transmission assembly is used for transmitting the solar silicon wafer; the oxidation assembly comprises an ozone generating device and a spraying device connected with the ozone generating device, and the spraying device is used for spraying ozone on the passing solar silicon wafer so as to form an oxidation film on the surface of the solar silicon wafer; the water film component is arranged behind the oxidation component and used for forming a water film on the upper surface of the oxidation film; the etching component is arranged behind the water film component and is used for etching the lower surface of the solar silicon wafer; the transport direction of the transport assembly is from front to back. The utility model provides an etching equipment has adopted ozone gas cladding's mode to cover the oxide film for solar wafer's surface, compares in the thermal oxidation equipment among the correlation technique, and oxidation equipment is with low costs, and need not high temperature reaction and has reduced the energy consumption, has shortened the oxidation process simultaneously, and then has improved solar wafer's preparation efficiency.
Description
Technical Field
The utility model relates to an sculpture technical device field of solar energy silicon chip particularly, especially relates to an etching equipment and preparation system including the solar energy silicon chip of above-mentioned etching equipment.
Background
At present, in the silicon wafer processing procedures of photovoltaic laser SE and inorganic alkali polishing, an oxide layer on the surface of a silicon wafer after the laser SE processing procedure can be seriously damaged, the inorganic alkali polishing of the oxide layer is very critical, and the surface of the silicon wafer cannot be guaranteed not to be corroded by organic alkali after the oxide layer is seriously damaged, so that the conversion efficiency of the silicon wafer cannot be guaranteed. At present, the conventional method is that after a silicon wafer is subjected to a laser SE (selective emitter) process, a layer of oxide layer is formed on the surface of the silicon wafer again through thermal oxidation, and the process needs to be completed by adopting a high-temperature furnace tube device, but the high-temperature furnace tube device has the problems of high cost and high energy consumption.
SUMMERY OF THE UTILITY MODEL
In order to solve at least one of the above technical problems, an object of the present invention is to provide an etching apparatus for solar silicon wafer.
Another object of the present invention is to provide a system for preparing the solar silicon wafer of the above etching apparatus.
In order to achieve the above object, the present invention provides an etching apparatus for solar silicon wafer, including: the transmission assembly is used for transmitting the solar silicon wafer; the oxidation assembly comprises an ozone generating device and a spraying device connected with the ozone generating device, and the spraying device is used for spraying ozone on the passing solar silicon wafer so as to form an oxidation film on the surface of the solar silicon wafer; the water film assembly is arranged behind the oxidation assembly and used for forming a water film on the upper surface of the oxidation film; the etching component is arranged behind the water film component and is used for etching the lower surface of the solar silicon wafer; wherein the conveying direction of the conveying assembly is from front to back.
Specifically, the etching equipment for the solar silicon wafer comprises a transmission component, and an oxidation component, a water film component and an etching component which are sequentially arranged, wherein the transmission component is used for bearing the solar silicon wafer to be etched, and the solar silicon wafer is sequentially subjected to the process steps of covering the oxidation film, covering the water film and etching a single surface.
The oxidation assembly comprises an ozone generating device and a spraying device, wherein the ozone generating device is used for providing ozone gas required by forming an oxidation film, the ozone generating device is used for conveying the generated ozone gas to the spraying device through a pipeline, the ozone gas is diffused and dispersed around the solar silicon wafer in a spraying mode so as to immerse the solar silicon wafer in the ozone gas, and the surface damage of the solar silicon wafer is repaired in a mode of forming the oxidation film through oxidation, wherein the damage is generated in the laser SE process step. And because the oxidizing property of the ozone is extremely strong, a layer of compact oxide film can be quickly generated on the surface of the solar silicon wafer, so that the requirement of inorganic base polishing in a single-side etching step on the oxide film can be completely met after the treatment.
Like this, for use high temperature furnace tube equipment to carry out the mode of oxidation among the correlation technique, the utility model provides an oxidation subassembly need not carry out high temperature reaction, reduces and comes the energy consumption. Compared with a high-temperature furnace tube, the ozone generating device has low cost, and meanwhile, automatic equipment matched with the high-temperature furnace tube is not needed, so that the cost is further reduced. Because the oxidability of the ozone is strong, the formation of an oxidation film is quicker, which is beneficial to shortening the manufacturing of the solar silicon wafer and improving the productivity. In addition, the ozone generating device and the spraying device have simple structures and can be used by being matched with single-sided etching process section equipment. In addition, use high temperature boiler tube equipment to carry out the problem that can lead to producing solar energy silicon chip perk limit, hidden crack in the processing procedure of oxidation among the correlation technique, increase the fragmentation rate in the processing procedure, seriously reduce the yields, use the utility model provides an oxidation assembly then the corresponding fragmentation rate that has reduced solar energy silicon chip has improved the yields.
The spraying device is used for forming a water film on the upper surface of the solar silicon wafer coated with the oxide film, the upper surface with the water film can not be etched in the manufacturing process of the etching assembly due to the existence of the water film, and the etching assembly only etches the lower surface without the water film, so that the possibility that the upper surface with the water film is etched is reduced, and the use reliability of the etching equipment is improved. In addition, the oxidation film formed by the previous oxidation assembly can increase the hydrophilicity of the solar silicon wafer, so that the water film on the solar silicon wafer entering the etching assembly does not fall into the etching groove of the etching assembly to dilute the liquid medicine.
The etching component removes the oxide film on the lower surface by utilizing a chemical reaction process, and polishes the lower surface of the solar silicon wafer. Meanwhile, the transmission assembly comprises a chain structure, so that the efficiency and stability of transmitting the solar silicon wafer can be ensured, the possibility that the upper surface of the solar silicon wafer is corroded is reduced, and the probability of damaging PN junctions and forming etching prints is reduced; and the solar silicon wafer can realize continuous production through the transmission assembly.
Additionally, the utility model provides an etching equipment among the above-mentioned technical scheme can also have following additional technical characterstic:
in the above technical solution, the spraying device is located above the transmission assembly.
In any of the above technical solutions, the oxidation assembly includes an ozone gas reaction tank, the transmission assembly is configured to transmit the solar silicon wafer to a position below the spraying device, and at least a portion of the ozone gas reaction tank is located below the spraying device and configured to collect ozone gas.
In the technical scheme, a guide plate is arranged in the ozone gas reaction tank, and the guide plate is positioned below the transmission component and is used for gathering ozone gas; and/or the ozone gas reaction tank is connected with an ozone breaker, and the ozone breaker is connected with an exhaust device.
In any of the above technical solutions, the oxidation assembly includes an ozone concentration sensor, and the ozone concentration sensor is disposed on the spraying device and is used for detecting the ozone concentration of the sprayed ozone gas; and/or a control valve is arranged between the spraying device and the ozone generating device and is used for controlling the ozone concentration of the ozone gas sprayed by the spraying device.
In any one of the above technical solutions, the water film assembly includes a dropping water film device and a dropping tank, the dropping tank is located below the transmission assembly, and the dropping water film device is located above the transmission assembly and is used for forming a water film on the upper surface of the solar silicon wafer passing through the dropping tank; and/or the transmission assembly comprises a transmission roller, and the transmission roller is used for bearing the solar silicon wafer.
In any one of the above technical solutions, the etching component includes an etching tank, the etching tank is located below the transmission component, the etching tank includes a reaction tank and an overflow tank adjacent to the reaction tank, the reaction tank is used for setting a liquid medicine to etch the lower surface of the solar silicon wafer through the liquid medicine, and the overflow tank is used for collecting the liquid medicine overflowing the reaction tank.
In the above technical solution, the etching component includes a liquid medicine circulation tank, at least one medicine discharge pipeline is disposed between the liquid medicine circulation tank and the overflow tank, and at least one medicine inlet pipeline is disposed between the liquid medicine circulation tank and the reaction tank, so that the reaction tank, the overflow tank and the liquid medicine circulation tank form a loop.
In the above technical scheme, a lift pump and an adjusting valve are arranged on the chemical inlet pipeline, the lift pump is arranged at an outlet end of the chemical liquid circulation tank and is used for conveying the chemical liquid in the chemical liquid circulation tank into the reaction tank, and the adjusting valve is arranged at an inlet end of the reaction tank and is used for controlling the liquid level height in the reaction tank so as to limit the chemical liquid from submerging on the upper surface of the solar silicon wafer; and/or a liquid discharge valve and/or an overflow pipe are/is arranged on the liquid medicine circulating groove.
The utility model discloses technical scheme of second aspect provides a preparation system of solar energy silicon chip, include as in any one of the first aspect technical scheme etching equipment.
The utility model discloses the preparation system of solar energy silicon chip that technical scheme of second aspect provided, because of including any one in the first aspect technical scheme etching equipment, therefore have all beneficial effects that any one of above-mentioned technical scheme had, no longer describe here.
Additional aspects and advantages of the invention will be set forth in part in the description which follows, or may be learned by practice of the invention.
Drawings
The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
fig. 1 is a schematic structural diagram of an etching apparatus according to some embodiments of the present invention;
fig. 2 is a schematic structural diagram of an etching apparatus according to some embodiments of the present invention.
Wherein, the correspondence between the reference numbers and the component names in fig. 1 and fig. 2 is:
1 a transmission component; 2 oxidizing the component; 3, a water film component; 4, etching the component; 5, a solar silicon wafer; 11 a transmission roller; 21 ozone gas reaction tank; 22 an ozone generating device; 23, a spraying device; 24 a control valve; 25 an ozone concentration sensor; 26 an ozone breaker; 27 a suction pump; 31 a liquid dropping tank; 32 drops of water film apparatus; 41, etching a groove; 42 a liquid medicine circulating tank; 43 medicine discharge pipelines; 44 a medicine inlet pipeline; 211 a baffle; 441 regulating valve; 442 a lift pump; 411 a reaction tank; 412 an overflow tank; 421 drain valve.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention more clearly understood, the present invention will be described in further detail with reference to the accompanying drawings and detailed description. It should be noted that the embodiments and features of the embodiments of the present application may be combined with each other without conflict.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, however, the present invention may be practiced in other ways than those specifically described herein, and therefore the scope of the present invention is not limited by the specific embodiments disclosed below.
An etching apparatus and a preparation system for a solar silicon wafer according to some embodiments of the present invention are described below with reference to fig. 1 and 2.
The utility model provides an etching equipment of solar energy silicon chip includes transmission module 1, oxidation subassembly 2, water film component 3 and sculpture subassembly 4.
Example one
Referring to the transport direction of the transport assembly 1, as shown in fig. 1, there are an oxidation assembly 2, a water film assembly 3, and an etching assembly 4 in this order from front to back.
The oxidation assembly 2 comprises an ozone generating device 22 and a spraying device 23, wherein the ozone generating device 22 is connected with the spraying device 23 through a pipeline, and the ozone generating device 22 transmits ozone gas to the spraying device 23. The shower unit 23 sprays ozone gas to form an oxide film on at least the upper surface of the solar silicon wafer 5, and repairs the surface damage of the solar silicon wafer 5 by oxidizing the oxide film. Because of the strong oxidizing property of ozone, a layer of compact oxide film can be quickly generated on the surface of the solar silicon wafer 5.
The water film assembly 3 is provided with a means for forming a water film on the upper surface of the oxide film by spraying water on the upper surface of the solar silicon wafer 5 to form the water film, the means for spraying water is provided above the transfer assembly 1, the transfer assembly 1 transfers the solar silicon wafer 5 to the lower side of the water spraying means, and the means sprays the solar silicon wafer 5 from the top down so that the upper layer of the oxide film is covered with the water film.
The etching component 4 is provided with a container for containing liquid medicine for etching the lower surface of the solar silicon wafer 5, the transmission component 1 conveys the solar silicon wafer 5 to the container, and in the single-surface etching process step, the liquid medicine for etching the solar silicon wafer 5 is filled in the container, so that the lower surface of the solar silicon wafer 5 can react with the liquid medicine in a chemical way when the solar silicon wafer 5 passes through the device.
The transmission component 1 passes through the oxidation component 2, the water film component 3 and the etching component 4, wherein the transmission component 1 is positioned below the spraying device 23 of the oxidation component 2, below the spraying device of the water film component 3 and penetrates through the container of the etching component 4, so that the solar silicon wafer 5 sequentially carries out the process steps of covering the oxidation film, covering the water film and etching the single surface, thereby realizing continuous production, having compact structure of multiple devices and being beneficial to reducing the processing time of the whole solar silicon wafer 5 through reasonable arrangement.
Further, a spray device 23 is located above the transport assembly 1.
The spraying device 23 is arranged above the transmission component 1 and sprays the solar silicon wafer 5 from top to bottom, and the transmission component 1 transmits the solar silicon wafer 5 to the lower part of the spraying device 23 so as to enable the solar silicon wafer 5 to react with the sprayed ozone gas. Under the action of the ozone gas gravity, more ozone gas covers the upper surface of the solar silicon wafer 5 to form an oxide film, so that the upper surface of the solar silicon wafer 5 is protected in the subsequent steps, the possibility of damaging the upper surface in the single-side etching process is reduced, and the yield of the solar silicon wafer is improved.
Example two
Based on the first embodiment, as shown in fig. 2, the oxidation assembly 2 further includes an ozone gas reaction tank 21, the transmission assembly 1 is used for transmitting the solar silicon wafer 5 to the lower portion of the spraying device 23, and at least a portion of the ozone gas reaction tank 21 is located below the spraying device 23 and is used for collecting ozone gas.
The utility model discloses an etching equipment that embodiment provided includes ozone gas reaction tank 21, and wherein at least part ozone gas reaction tank 21 is located the below of transmission subassembly 1 for collect ozone gas. Under the action of the self gravity of the ozone gas, the ozone gas firstly falls down on the upper surface of the solar silicon wafer 5 to form an oxide film, and the residual ozone gas continuously falls down into the ozone gas reaction tank 21 to be collected to limit the diffusion of the ozone gas, so that the possibility that the ozone gas overflows the oxidation component 2 to cause harm to a human body can be effectively reduced, and the use safety of the oxidation component 2 and the etching equipment is improved.
It can be understood that a part of the ozone gas reaction tank 21 can be positioned above the transmission assembly 1, and a reaction zone of ozone gas is formed above the transmission assembly 1 to provide a reaction space for the ozone gas to form an oxide film on the surface of the solar silicon wafer 5. In this way, the ozone gas sprayed from the spraying device 23 is filled in the ozone gas reaction tank 21, and when the solar silicon wafer 5 is conveyed into the ozone gas reaction tank 21 by the conveying assembly 1, the ozone gas is dispersed around the solar silicon wafer 5, so that a denser oxide film can be formed by wrapping the solar silicon wafer 5 from the periphery. Meanwhile, each solar silicon wafer 5 passing through the lower part of the spraying device 23 does not need to be sprayed, so that the retention time of the solar silicon wafer 5 below the spraying device 23 can be shortened, the formation efficiency of an oxidation film is improved, and the processing time of the whole solar silicon wafer 5 is shortened.
Further, a guide plate 211 is arranged in the ozone gas reaction tank 21, and the guide plate 211 is positioned below the transmission component 1 and used for gathering ozone gas.
The guide plate 211 is obliquely arranged in the ozone gas reaction tank 21, so that the ozone gas is gathered to the bottom of the ozone gas reaction tank 21, thereby being convenient for intensively treating the ozone gas, further limiting the diffusion of the ozone gas and improving the use safety of the oxidation assembly 2 and the etching equipment.
Further, an ozone breaker 26 is connected to the ozone gas reaction tank 21, and an exhaust device is connected to the ozone breaker 26.
Ozone can be purified by the ozone remover 26, and after purification, the ozone can be discharged to the external environment, so that harm to a human body can be effectively reduced, and the use safety of the oxidation assembly 2 or the etching equipment is improved. In addition, since ozone gas has a higher specific gravity than air, it is possible to provide a better exhaust effect by disposing the exhaust port at the lower portion of the ozone gas reaction tank 21. Optionally, the exhaust means comprises a suction pump 27.
EXAMPLE III
In addition to the first or second embodiment, as shown in fig. 2, the oxidation assembly 2 further includes an ozone concentration sensor 25, and the ozone concentration sensor 25 is disposed on the spraying device 23 and is used for detecting the ozone concentration of the ozone gas sprayed by the spraying device 23.
The utility model discloses an etching equipment that embodiment provided includes ozone concentration sensor 25, and ozone concentration sensor 25 sets up on spray set 23, can detect the ozone concentration of the ozone gas that spray set 23 sprayed out. If the ozone concentration is relatively low and the condition for forming the oxide film cannot be satisfied or the time for forming the oxide film is prolonged, it is necessary to increase the ozone concentration in the ozone gas reaction tank 21 by supplying ozone gas into the ozone gas reaction tank 21. By starting the ozone generating device 22, ozone gas is conveyed into the ozone gas reaction tank 21, the ozone concentration in the ozone gas reaction tank 21 is controlled within a certain range, and by reasonably setting the ozone concentration control range, the using amount of ozone can be correspondingly reduced, the using efficiency can be improved, and the waste can be reduced; the possibility that oxide films meeting the conditions are not formed on the surface of the solar silicon wafer 5 can be reduced, and the use reliability of equipment is improved; on the basis of meeting the forming conditions of the oxide film, the forming time of the oxide film is shortened, the efficiency is improved, and the processing time of the whole solar silicon wafer 5 is further shortened. It is understood that the ozone concentration sensor 25 can be disposed at other positions, such as in the ozone gas reaction tank 21, or at a position close to the transmission assembly 1 or the solar silicon wafer 5, and can obtain a more accurate detection result.
Further, a control valve 24 is arranged between the spraying device 23 and the ozone generating device 22, and the control valve 24 is used for controlling the ozone concentration of the ozone gas sprayed by the spraying device.
The control valve 24 is arranged on the connecting pipeline between the spraying device 23 and the ozone generating device 22, the conveying of ozone gas is controlled through the control valve 24, the step of repeatedly starting and stopping the ozone generating device 22 in the situation that the concentration of ozone in the ozone gas reaction tank 21 is repeatedly changed is omitted, and the ozone generating device is more convenient. Meanwhile, the control valve 24 can continuously supply air by setting the opening degree of the valve, so that the effect of controlling the concentration of ozone is achieved. It will be appreciated that ozone generator 22 needs to be maintained in a normally open state to reduce the energy consumption associated with repeated start-stops.
Example four
As shown in fig. 2, in addition to the above embodiment, the water film assembly 3 further includes a dropping water film device 32 and a dropping tank 31, the dropping tank 31 is located below the transferring assembly 1, and the dropping water film device 32 is located above the transferring assembly 1, and is used for forming a water film on the upper surface of the solar silicon wafer 5 passing through the dropping tank 31.
The dropping liquid water film device 32 is arranged above the transmission assembly 1, so that when the transmission assembly 1 transmits the solar silicon wafer 5 to the lower part of the water spraying device, the dropping liquid water film device 32 can form a water film on the upper surface of the oxidation film by water drops, and the water film is not easy to fall off from the solar silicon wafer 5 due to the existence of the oxidation film, so that the protection effect on the upper surface of the solar silicon wafer 5 can be achieved, and the upper surface of the solar silicon wafer 5 is prevented from being etched in the process of etching the solar silicon wafer 5 through the etching assembly 4. The lower part of the transmission component 1 is provided with a liquid dripping tank 31 for containing liquid dripped by the liquid dripping water film device 32, and the liquid dripping tank 31 is provided with a pipeline which can discharge the liquid so as to improve the degree of environmental sanitation.
EXAMPLE five
As shown in fig. 2, on the basis of any of the above embodiments, further, the etching assembly 4 includes an etching tank 41, the etching tank 41 is located below the conveying assembly 1, the etching tank 41 includes a reaction tank 411 and an overflow tank 412 adjacent to the reaction tank 411, the reaction tank 411 is used for disposing a chemical liquid to etch the lower surface of the solar silicon wafer 5 through the chemical liquid, and the overflow tank 412 is used for collecting the chemical liquid overflowing the reaction tank 411.
The etching assembly 4 comprises an etching tank 41, wherein the etching tank 41 comprises a reaction tank 411 and an overflow tank 412, the reaction tank 411 is used for containing a liquid medicine, and the liquid medicine can etch the lower surface of the solar silicon wafer 5. The transmission assembly 1 transmits the solar silicon wafer 5 to the etching tank 41, and the solar silicon wafer 5 chemically reacts with the liquid medicine in the reaction tank 411 when passing through the reaction tank 411. An overflow tank 412 is provided in front of or behind the reaction tank 411, or the overflow tanks 412 are provided in front of and behind the reaction tank 411. The reaction tank 411 and the overflow tank 412 are separated by a partition plate, and the height of the partition plate is reasonably set, so that the liquid level height of the liquid medicine in the reaction tank 411 can be controlled, and the liquid medicine is matched with the transmission assembly 1, so that the lower surface of the passing solar silicon wafer 5 can be contacted with the liquid medicine, the possibility of the contact of the upper surface and the liquid medicine is reduced, the upper surface of the solar silicon wafer 5 is free of acid corrosion, PN junctions are not damaged, and 'etching marks' are not easy to form. On one hand, the liquid level height of the liquid medicine in the reaction tank 411 is controlled through the overflow tank 412, so that the use reliability of the etching component 4 is improved, and on the other hand, the used liquid medicine is discharged and the oxide film removed from the lower surface of the solar silicon wafer 5 is discharged, so that the concentration of the liquid medicine in the reaction tank 411 is ensured, and the use stability of the etching component 4 is improved. The etching tank 41 is a PSG removal tank, and the liquid medicine is a phosphorus-removed silicate glass (PSG) treatment liquid, and is used for removing the phosphorus-removed silicate glass formed on the surface of the solar silicon wafer 5 after the diffusion process of the solar silicon wafer 5.
Further, the etching assembly 4 includes a chemical liquid circulation tank 42, at least one chemical discharge pipeline 43 is disposed between the chemical liquid circulation tank 42 and the overflow tank 412, and at least one chemical feed pipeline 44 is disposed between the chemical liquid circulation tank 42 and the reaction tank 411, so that the reaction tank 411, the overflow tank 412 and the chemical liquid circulation tank 42 form a loop.
The etching apparatus provided in this embodiment is provided with a chemical liquid circulation tank 42, the chemical liquid circulation tank 42 is used for collecting the chemical liquid in the overflow tank 412, the chemical liquid circulation tank 42 is connected to the overflow tank 412 through at least one chemical discharge pipeline 43, and for the case that the overflow tanks 412 are provided before and after the reaction tank 411, the chemical liquid circulation tank 42 is respectively connected to the two overflow tanks 412. It is understood that the chemical in the overflow tank 412 can be used continuously, so that the chemical can be recycled by providing the chemical inlet pipe 44 between the chemical circulation tank 42 and the reaction tank 411, which helps to improve the utilization rate of the chemical. The reaction tank 411 is provided with a plurality of inlet ends connected with the medicine inlet pipeline 44, so that the circulation efficiency can be improved, the medicine liquid can continuously flow, the etching treatment of the lower surface of the solar silicon wafer 5 by using the new medicine liquid is maintained, the concentration of the medicine liquid in the reaction tank 411 is maintained by continuously supplementing the new medicine liquid, and the use stability is improved. In addition, in the case of providing a plurality of chemical inlet pipes 44, the inlet ends are dispersedly disposed on the reaction tank 411, so that the liquid level of the chemical solution can be uniformly fluctuated, the fluctuation of the liquid level can be reduced, the balance of the liquid level in the front-rear direction can be maintained, and the use stability of the etching assembly 4 can be further improved.
Further, the medicine inlet pipe 44 is provided with a lift pump 442 and an adjusting valve 441, the lift pump 442 is disposed at an outlet end of the medicine liquid circulation tank 42 and is used for conveying the medicine liquid in the medicine liquid circulation tank 42 into the reaction tank 411, and the adjusting valve 441 is disposed at an inlet end of the reaction tank 411 and is used for controlling a liquid level in the reaction tank 411 so as to limit the medicine liquid from passing over the upper surface of the solar silicon wafer 5.
The medicine inlet pipeline 44 is provided with the lift pump 442, which can improve the circulation speed of the medicine liquid by applying work through the lift pump 442, thus being beneficial to maintaining the concentration of the medicine liquid in the reaction tank 411 and further improving the use stability of the etching assembly 4. The regulating valve 441 arranged on the medicine inlet pipeline 44 can control the flow of the liquid medicine conveyed to the reaction tank 411 through reasonably regulating the opening degree of the regulating valve 441, so as to control the circulation speed of the liquid medicine, so that the liquid medicine can completely react with the solar silicon wafer 5, and meanwhile, the liquid medicine participating in the reaction directly enters the overflow tank 412 to maintain the concentration of the liquid medicine in the reaction tank 411, thereby improving the utilization rate of the liquid medicine and the etching efficiency of the solar silicon wafer 5. Alternatively, the regulating valve 441 is disposed at the rear end of the lift pump 442 in the direction from the chemical solution circulation tank 42 to the reaction tank 411, so that the flow rate of the chemical solution passing therethrough can be better controlled. Alternatively, the regulating valve 441 and the lift pump 442 may be provided in plural numbers corresponding to the number of inlet ports of the reaction tank 411 to obtain a better control effect. Alternatively, a plurality of inlet ends are arranged at intervals, so that the concentration of the liquid medicine in the reaction tank 411 can be more uniform. It can be understood that the liquid medicine height of the reaction tank 411 can be controlled by adjusting the rotation speed of the regulating valve 441 and the lift pump 442, so as to reduce the possibility that the upper surface of the solar silicon wafer 5 is corroded due to the excessively high liquid level of the liquid medicine, and ensure that the quality of the solar silicon wafer 5 is affected.
Further, a drain pipe and an overflow pipe are provided in the chemical solution circulation tank 42.
A drain pipe is provided at the bottom of the chemical solution circulation tank 42 for emptying the chemical solution circulation tank 42. An overflow pipe for limiting the liquid level of the chemical in the chemical circulation tank 42 is provided at an upper position of the chemical circulation tank 42. The drain pipe is provided with a drain valve 421, and the drain valve 421 is used for controlling the on-off of the drain pipe. The outlet ends of the liquid discharge pipe and the overflow pipe are connected together, so that uniform discharge treatment can be performed, and partial pipelines are shared, so that cost saving is facilitated.
EXAMPLE six
As shown in fig. 2, on the basis of any of the above embodiments, further, the conveying assembly 1 includes a conveying roller 11, and the conveying roller 11 is used for carrying the solar silicon wafer 5.
The following describes a specific structure and a workflow of the etching apparatus provided in the present application with a specific embodiment.
At present, in the manufacturing process of silicon wafers polished by photovoltaic laser SE and inorganic alkali, an oxide layer on the upper surface of the silicon wafer can be seriously damaged after the manufacturing process of the laser SE, and the oxide layer is very critical in the inorganic alkali polishing, so that the upper surface is protected from being corroded by organic alkali, and the conversion efficiency of the silicon wafer is ensured. At present, according to the conventional method, after a silicon wafer is subjected to a laser SE (selective emitter) process, a thermal oxidation device is added, an oxide layer is formed on the surface of the silicon wafer again, and the process is completed by adopting a high-temperature furnace tube device. These factors do not match the theme of cost reduction and efficiency enhancement of photovoltaic cells.
Therefore, an embodiment of the present invention provides an etching apparatus including a chain device, which does not change the process flow, does not need to separately increase a high temperature oxidation apparatus, does not affect the yield, and does not need to increase the energy consumption. The method specifically comprises the following steps: an oxide film is generated on the surface of the silicon wafer in a gas covering and wrapping mode, and the silicon wafer does not need to be placed at high temperature for a long time; the device can be integrated to be used as a PSG process section removing device without independently increasing the device, and the structure is simple; no more energy consumption needs to be increased; the whole process time can be reduced; the hydrophilicity of the silicon wafer is increased, so that water entering the silicon wafer in the PSG removing groove does not fall into the liquid groove to dilute the liquid medicine.
The etching equipment including the chain device provided by the embodiment specifically includes: a transfer roller 11; an ozone gas reaction tank 21; a dropping tank 31; etching the trench 41 (PSG removal trench); an ozone generating device 22; a control valve 24 (ozone concentration control valve); a spraying device 23 (gas uniform flow spraying box); an ozone concentration sensor 25; an ozone breaker 26; a suction pump 27; a dropping water film device 32; a regulating valve 441 (liquid level regulating valve); a lift pump 442; a chemical solution circulation tank 42.
The silicon chip is conveyed to an ozone gas reaction tank 21 through a conveying roller 11, and ozone is injected into the ozone gas reaction tank 21 through an ozone injection device, so that the silicon chip is oxidized to form an oxide film, and meanwhile, the hydrophilicity of the silicon chip is increased; then the transmission roller 11 is controlled to send the silicon wafer to the liquid dropping water film device 32 so as to form a water film on the upper surface of the silicon wafer; and finally, controlling the transmission roller 11 to send the silicon wafer to a PSG removing groove for etching, wherein the upper surface of the silicon wafer has a water film and is not etched, and the PSG removing groove only etches the lower surface of the silicon wafer.
The ozone injection device comprises an ozone generating device 22, an ozone concentration sensor 25, an ozone concentration control valve and a gas uniform flow spraying box; the ozone concentration control valve sends the ozone generated by the ozone generating device 22 to the gas uniform flow spraying box according to the ozone concentration displayed by the ozone concentration sensor 25; ozone is uniformly distributed on the transmission roller 11 and the gas uniform flow spraying box through the gas uniform flow spraying box, so that the silicon wafer is wrapped by the ozone, and an oxide layer can be effectively formed on the surface of the silicon wafer. Wherein, an ozone discharge outlet is arranged at the lower part of the ozone gas reaction tank 21, and after the production is finished, the gas is sent to an ozone breaker 26 by a suction pump 27 to be purified and then discharged; the liquid dropping water film device 32 is suitable for dropping liquid on the surface of the silicon chip to form a water film; a liquid dropping groove 31 is arranged below the liquid dropping water film device 32 and collects the liquid dropped by the liquid dropping water film device 32; go the PSG groove and be equipped with reaction zone and overflow area, the liquid medicine in reaction zone is squeezed into the liquid medicine of liquid medicine circulation tank 42 through the pump, then flows back to liquid medicine circulation tank 42 through the overflow area and the overflow pipeline on both sides, forms a circulation, and the reuse many times, the liquid medicine height in reaction zone can be controlled through the rotational speed of adjusting liquid level regulating valve and elevator pump and avoid the liquid medicine too high to corrode silicon chip upper surface, influences the silicon chip quality.
To sum up, the utility model provides an etching equipment has adopted ozone gas cladding's mode to cover the oxide film for solar energy silicon chip 5's surface, compares in the thermal oxidation equipment among the correlation technique, and oxidation equipment is with low costs, and need not high temperature reaction and has reduced the energy consumption, has shortened the oxidation process simultaneously, and then has improved solar energy silicon chip 5's preparation efficiency.
In the present application, the terms "first", "second", "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance; the term "plurality" means two or more unless expressly limited otherwise. The terms "mounted," "connected," "fixed," and the like are to be construed broadly, and for example, "connected" may be a fixed connection, a removable connection, or an integral connection; "coupled" may be direct or indirect through an intermediary. The specific meaning of the above terms in the present invention can be understood according to specific situations by those skilled in the art.
In the description of the present invention, it should be understood that the terms "upper", "lower", "left", "right", "front", "back", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the device or unit indicated must have a specific direction, be constructed and operated in a specific orientation, and therefore, should not be construed as limiting the present invention.
In the description of the present specification, the description of the terms "one embodiment," "some embodiments," "specific embodiments," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. An etching device for a solar silicon wafer is characterized by comprising:
the transmission assembly is used for transmitting the solar silicon wafer;
the oxidation assembly comprises an ozone generating device and a spraying device connected with the ozone generating device, and the spraying device is used for spraying ozone on the passing solar silicon wafer so as to form an oxidation film on the surface of the solar silicon wafer;
the water film assembly is arranged behind the oxidation assembly and used for forming a water film on the upper surface of the oxidation film;
the etching component is arranged behind the water film component and is used for etching the lower surface of the solar silicon wafer;
wherein the conveying direction of the conveying assembly is from front to back.
2. Etching apparatus according to claim 1,
the spraying device is positioned above the transmission assembly.
3. Etching apparatus according to claim 1,
the oxidation assembly comprises an ozone gas reaction tank, the transmission assembly is used for transmitting the solar silicon wafer to the position below the spraying device, and at least part of the ozone gas reaction tank is positioned below the spraying device and used for collecting ozone gas.
4. Etching apparatus according to claim 3,
a guide plate is arranged in the ozone gas reaction tank, is positioned below the transmission component and is used for gathering ozone gas; and/or
The ozone gas reaction tank is connected with an ozone breaker, and the ozone breaker is connected with an exhaust device.
5. Etching apparatus according to claim 1,
the oxidation assembly comprises an ozone concentration sensor, and the ozone concentration sensor is arranged on the spraying device and used for detecting the ozone concentration of the sprayed ozone gas; and/or
A control valve is arranged between the spraying device and the ozone generating device and is used for controlling the ozone concentration of the ozone gas sprayed by the spraying device.
6. Etching apparatus according to any one of claims 1 to 5,
the water film component comprises a dropping liquid water film device and a dropping liquid tank, the dropping liquid tank is positioned below the transmission component, and the dropping liquid water film device is positioned above the transmission component and is used for forming a water film on the upper surface of the solar silicon wafer passing through the dropping liquid tank; and/or
The transmission assembly comprises a transmission roller, and the transmission roller is used for bearing the solar silicon wafer.
7. Etching apparatus according to any one of claims 1 to 5,
the etching assembly comprises an etching groove, the etching groove is located below the transmission assembly and comprises a reaction groove and an overflow groove adjacent to the reaction groove, the reaction groove is used for setting liquid medicine to etch the lower surface of the solar silicon wafer through the liquid medicine, and the overflow groove is used for collecting the liquid medicine overflowing the reaction groove.
8. Etching apparatus according to claim 7,
the etching assembly comprises a liquid medicine circulating groove, at least one medicine discharging pipeline is arranged between the liquid medicine circulating groove and the overflow groove, and at least one medicine feeding pipeline is arranged between the liquid medicine circulating groove and the reaction groove, so that the reaction groove, the overflow groove and the liquid medicine circulating groove form a loop.
9. Etching apparatus according to claim 8,
the lifting pump is arranged at the outlet end of the liquid medicine circulating tank and used for conveying liquid medicine in the liquid medicine circulating tank into the reaction tank, and the regulating valve is arranged at the inlet end of the reaction tank and used for controlling the liquid level height in the reaction tank so as to limit the liquid medicine from submerging on the upper surface of the solar silicon wafer; and/or
And a liquid discharge pipe and/or an overflow pipe are/is arranged on the liquid medicine circulating tank.
10. A system for producing a solar silicon wafer, comprising the etching apparatus according to any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921581221.7U CN210607296U (en) | 2019-09-20 | 2019-09-20 | Etching equipment and preparation system for solar silicon wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921581221.7U CN210607296U (en) | 2019-09-20 | 2019-09-20 | Etching equipment and preparation system for solar silicon wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN210607296U true CN210607296U (en) | 2020-05-22 |
Family
ID=70720602
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201921581221.7U Active CN210607296U (en) | 2019-09-20 | 2019-09-20 | Etching equipment and preparation system for solar silicon wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN210607296U (en) |
-
2019
- 2019-09-20 CN CN201921581221.7U patent/CN210607296U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109004062B (en) | Method and equipment for etching and polishing silicon wafer by using ozone in alkaline system | |
| CN101748492B (en) | Apparatus and method for washing polycrystalline silicon | |
| CN201579228U (en) | Silicon wafer spraying and cleaning system | |
| CN110534408A (en) | A kind of crystal-silicon battery slice chain type alkali polishing production line and chain type alkali polishing method | |
| JP4053649B2 (en) | Etching equipment | |
| CN211914785U (en) | Device containing ozone for spray-type cleaning of silicon wafer | |
| CN208538890U (en) | A kind of equipment for realizing silicon chip erosion polishing | |
| CN210628334U (en) | Etching equipment and preparation system for solar silicon wafer | |
| CN210607296U (en) | Etching equipment and preparation system for solar silicon wafer | |
| CN106169521A (en) | What a kind of crystal silicon solar energy battery was processed removes phosphorosilicate glass machining production line | |
| EP4078689B1 (en) | Method and wet bench for selectively removing an emitter layer on a single side of a silicon substrate | |
| CN110491972A (en) | Cell piece chain type etches alkali and carries on the back polishing process | |
| CN201427995Y (en) | System by using mist chemical agent to carry out single-side continuous chemical wet processing | |
| CN110752269A (en) | Etching equipment and preparation system for solar silicon wafer | |
| CN110600584A (en) | Etching equipment and preparation system for solar silicon wafer | |
| CN207183226U (en) | A kind of silicon solar cell wet etching water washing device | |
| JPH0799177A (en) | Immersion treatment apparatus for substrate | |
| CN210136844U (en) | Chain type alkali polishing production line for crystalline silicon battery piece | |
| JP2011082430A (en) | Substrate surface-processing apparatus and apparatus for manufacturing solar cell | |
| CN218160421U (en) | System for removing borosilicate glass of solar cell with acceleration | |
| CN207967027U (en) | The wet-method etching device of substrate | |
| CN212848458U (en) | Mass production equipment for removing microcrystalline silicon thin film | |
| CN207611751U (en) | Equipment for being chemically treated semiconductor substrate and mechanical transfer unit | |
| CN216488099U (en) | Etching groove, silicon wafer processing system and solar cell manufacturing system | |
| CN114883190B (en) | Method for removing PSG layer on single surface of silicon wafer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |