CN210596315U - Vertical pulling single crystal furnace - Google Patents
Vertical pulling single crystal furnace Download PDFInfo
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- CN210596315U CN210596315U CN201921220102.9U CN201921220102U CN210596315U CN 210596315 U CN210596315 U CN 210596315U CN 201921220102 U CN201921220102 U CN 201921220102U CN 210596315 U CN210596315 U CN 210596315U
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Abstract
The utility model discloses a czochralski crystal growing furnace, which belongs to the field of monocrystalline silicon production and comprises a crucible and a heater, wherein the periphery of the heater is provided with a heat preservation layer, and the crucible comprises a quartz crucible for holding melt and a peripheral supporting crucible sleeved outside the quartz crucible; the heater comprises a main heater surrounding the crucible and an auxiliary heater arranged at the bottom of the crucible; a plurality of thermocouple temperature probes are arranged outside the heat-insulating layer at intervals in the vertical direction, or a first window for an infrared thermometer to measure temperature is arranged on the heat-insulating layer. The temperature distribution of the melt in the quartz crucible is indirectly detected and controlled to achieve scientific and accurate control of the crystal pulling process, the temperature of the melt at the bottom of the crucible is controlled to be as low as possible in the crystal pulling process to obtain the single crystal with lower oxygen content, the highest temperature of the melt in the crucible is controlled to be as low as possible to obtain the single crystal with lower defect density, the pulling speed is higher, the crystal pulling cost is lower, and the quality of the single crystal is greatly improved.
Description
Technical Field
The utility model relates to a monocrystalline silicon production field, specifically speaking relates to a czochralski crystal growing furnace.
Background
As the ultra-large scale integrated circuit enters the nanometer size, the requirement of large-diameter and high-quality silicon single crystals with low oxygen content and ultra-low density defects is higher and higher, and the breakthrough and innovation of the crystal pulling technology are more important.
The crystal pulling technology faces two major challenges for a long time, one is a low-cost high-quality single crystal growth technology, the other is to control the crystal pulling process to obtain the stability and consistency of the quality of the single crystal, the control factors in the crystal pulling process are many, the automatic control of the diameter of the single crystal, the automatic control of the temperature, the control of the growth liquid level, the control of parameters such as furnace pressure, protective gas flow, crystal rotation, crucible rotation and the like, although the control factors are many and the combination of the factors is more varied, the main factor closely related to the quality of the single crystal is the temperature gradient of a melt in a crucible, and the size of the temperature gradient determines the thermal convection of the melt in the crucible and seriously affects the oxygen content of main impurities of the single crystal and the integrity of crystal lattices.
Oxygen in silicon comes from a quartz crucible, liquid silicon material corrodes the inner wall of the quartz crucible at high temperature, oxygen in the crucible enters a melt and enters the whole crucible along with the flow of the melt, most of the oxygen (> 95%) volatilizes from the liquid surface into protective gas in a SiO gas mode, a small amount of oxygen enters a silicon crystal through segregation and condensation, the oxygen content in the silicon is determined to be the oxygen content in the silicon melt near a growth interface, the growth interface is far away from the crucible wall, the oxygen in the melt near the growth interface comes from two ways, one is through diffusion, the oxygen enters the vicinity of the growth interface from a high-concentration area, the other is through heat convection, the melt of high-concentration oxygen near the crucible wall enters the vicinity of the growth interface through transmission, the control of the oxygen content in the crystal is mainly used for controlling the longitudinal temperature gradient in the melt, so as to control the size of the heat convection of the melt, and the oxygen-rich melt near the quartz crucible wall is controlled to be quickly transmitted to a crystal growth area, so as to achieve the purpose of controlling oxygen. Under the condition of ensuring that the bottom of the crucible is not crystallized under the extreme condition, when the temperature of the bottom of the crucible is kept to be the lowest as much as possible, the temperature gradient near the bottom of the crucible is negative, so that the thermal convection and even no convection can be obviously reduced, a melt with high concentration of oxygen near the wall of the crucible cannot enter the vicinity of a growth interface, a relatively closed area is formed below a solid-liquid surface for crystal growth, a single crystal with extremely low oxygen content can be obtained, and the effect of oxygen reduction even exceeds the effect of crystal pulling of a superconducting magnetic field.
The object of pulling a single crystal is to obtain a single crystal of perfect structure, an absolutely perfect crystal being absent, but the size and density of crystal defects are controlled so as not to seriously affect the device, and it has been found that the type and density of defects in the silicon lattice are related to the ratio of V/G (t), V being the crystal growth rate, G (t) being the temperature gradient across the solid-liquid interface, and that, in general, the ratio of V/G has a critical value above which the crystal grows into vacancy defects, the greater the ratio of V/G the greater the density of vacancy point defects, the less than this critical value the crystal grows into interstitial defects, and the lower the ratio of V/G the greater the density of interstitial point defects, while on the same growth interface, crystals of two types of point defects are formed simultaneously, and it is easy to form OISF rings at the junction of vacancy type and interstitial type crystals, OISF rings are macroscopic large-scale surface defects under the spotlight that once formed, result in a whole piece being scrapped.
The first condition of crystal growth is to avoid the formation of OISF ring, generally adopt the method of raising pulling speed and reducing G (T), so as to keep the V/G ratio far greater than critical value, raise pulling speed and must increase heat transfer of single crystal, make the single crystal cool down rapidly, the temperature gradient of the crystal is increased correspondingly, the temperature gradient increase of the crystal is not only favorable for a large amount of vacancy type point defects just formed to discharge outside the crystal through slipping, but also effectively prevent point defects from gathering each other to form microdefects with larger size. The most effective way to reduce G (T) is to reduce the temperature gradient of the melt.
In summary, the reduction of the temperature gradient of the whole body in the melt can obviously reduce the thermal convection, thereby achieving the effect of reducing oxygen, and the reduction of the temperature gradient near the crystal growth interface can effectively prevent the generation of defects such as thermal oxidation stacking fault, thermal oxidation vortex and the like.
In the process of pulling the single crystal, the dynamic detection of the temperature in the melt is not practical, but the detection of the temperature of the heat-preserving cylinder outside the crucible is convenient and easy. In a relative thermal equilibrium state, longitudinal temperature distribution in the crucible radiates and is fed back to the graphite inner cylinder, and the longitudinal temperature gradient of the graphite inner cylinder is indirectly measured, so that the temperature gradient of a melt in the crucible is detected to a certain extent.
The conventional czochralski single crystal uses a heater, the melt is positioned in a heating area of the heater in the crystal pulling process, the upper and lower positions of the crucible are adjusted, the temperature gradient of the melt cannot be obviously changed, and the effect of controlling the temperature gradient of the melt cannot be achieved.
SUMMERY OF THE UTILITY MODEL
The utility model aims at providing a czochralski crystal growing furnace, which can effectively control the temperature gradient of a melt.
In order to realize the aim, the utility model provides a czochralski crystal growing furnace which comprises a crucible and a heater, wherein the periphery of the heater is provided with a heat-insulating layer, and the crucible comprises a quartz crucible for containing melt and a peripheral supporting crucible sleeved outside the quartz crucible; the heater comprises a main heater surrounding the crucible and an auxiliary heater arranged at the bottom of the crucible; a plurality of thermocouple temperature probes are arranged outside the heat-insulating layer at intervals in the vertical direction, or a first window for an infrared thermometer to measure temperature is arranged on the heat-insulating layer.
In the technical scheme, the double heaters are arranged for controlling the temperature gradient of the melt, the heating mode of the main heater is similar to that of a conventional heater and is that the melt is heated from the side surface, the auxiliary heater is arranged at the bottom of the crucible, the heating mode is mainly heating from the bottom, and the control on the temperature and the temperature gradient of the melt in the crucible can be achieved by controlling the power and the proportion of the upper heater and the lower heater.
There are two methods for measuring the temperature outside the insulating layer, an infrared colorimetric method and a thermocouple test method. The position is selected as the maximum position of the longitudinal temperature gradient between the middle of two positive and negative electrodes close to a main furnace chamber rotating arm in the circumferential direction or between the two electrodes, a window with the width of several centimeters is required to be formed on a heat preservation layer by an infrared colorimetric method so that an infrared thermometer can detect the temperature of the outer side of a graphite heat preservation inner cylinder, an infrared colorimetric test probe is arranged outside the window in the direction of connecting the center of the furnace chamber with the window, the temperature measurement of the upper part and the lower part of the window is completed by moving the upper position and the lower position of the test probe, the thermocouple temperature measurement is to embed a thermocouple temperature measurement probe at a temperature measurement point on the outer side of the heat preservation inner cylinder of the heat preservation layer, and the number. The temperature of each position outside the heat-preservation inner cylinder is dynamically measured to obtain the longitudinal temperature gradient and the change condition outside the heat-preservation cylinder.
The temperature measuring point outside the graphite inner cylinder is fixed relatively after being fixed along with the test probe, the crucible position is moved upwards along with the continuous growth of the single crystal in the actual crystal pulling process, the melt in the crucible is not changed greatly except the position of the growth liquid level, the bottom of the crucible is raised, the height of the melt is reduced, the temperature gradient of the melt is also changed, the temperature measured outside the heat preservation cylinder is converted into the temperature corresponding to each point of the melt in the crucible at any time, and the detection and the control of the temperature gradient of the melt are achieved. The collection, analysis and summarization of test data and dynamic output of various charts are realized by the aid of a computer, and the method is simple and easy to implement.
In order to improve the crystal pulling quality, the height of the main heater is preferably 1/3-2/3 of the height of the crucible.
Preferably, the heat-insulating layer comprises a graphite heat-insulating inner cylinder positioned at the inner layer and an outer heat-insulating layer positioned at the outer layer. The outer heat insulating layer is carbon felt or expanded graphite.
Preferably, the peripheral support crucible is made of graphite or a carbon-carbon composite material.
In order to stabilize the structure of the whole device, a main furnace cylinder is preferably arranged outside the heat-insulating layer, and a second window corresponding to the first window is arranged on the main furnace cylinder. The first window and the second window are both vertical groove-shaped.
Preferably, the auxiliary heater is disc-shaped or bowl-shaped. When the auxiliary heater is designed into a bowl shape, the side heating effect can be achieved.
Preferably, the position of the thermometer in the vertical direction is within at least 2cm above and below the melt in the crucible.
The utility model discloses a measurement control method for realizing longitudinal temperature gradient of a czochralski crystal growing furnace, which comprises the following steps:
1) determining the position of the measuring point of the thermodetector, taking the upper side edge of the main heater as the O point in the horizontal direction, taking the position of the vertical downward distance from the O point as the X-axis direction, and taking the X-axis direction as the X-axis direction1、X2……XiAs a measurement point;
2) temperature measurement and data processing, measuring the temperature T at each measurement point1、T2……TiTaking the temperature signal of each temperature measuring point, and drawing the temperature data and the corresponding point of the position data in the vertical direction to obtain a T-X curve at a certain time;
3) determining the position X of the growth interface during isodiametric growthNoodleAnd the starting position X of the quartz crucible bottomBottom；
The initial liquid level in the crucible is determined according to the corrosion line of the silicon melt on the inner wall of the crucible under a certain feeding amount, the vertical distance a between the corrosion line and the upper edge of the peripheral supporting crucible is measured after the furnace is disassembled, and then the initial position b, X of the peripheral supporting crucible during the isodiametric growth is determinedNoodleA + b, starting position X of crucible bottomBottomL is the vertical depth of the liquid level of the molten silicon in the crucible, and is equal to the total height of the crucible, namely the distance from the molten silicon corrosion line to the upper edge of the quartz crucible.
4) Determining the position and temperature corresponding to the bottom of a quartz crucible in the crystal pulling process; calculating the highest temperature T according to the T-X curve of the step 2)max。
The position of a growth interface is unchanged in the crystal pulling process, the position of the crucible bottom is changed along with the rising position of a crucible shaft, and the position X of the crucible bottom is at a certain time or at a certain equal diameter lengthBottom' (a + b + L) -crucible lifting distance, substituting the crucible bottom temperature into the T-X curve obtained in the step 2) according to the crucible bottom position, and calculating the temperature T by a computerBottom’。
5) Calculating and outputting the temperature difference delta T between the bottom of the quartz crucible and the growth interface at any time; 6) determiningThe critical value of Delta T when single crystal distortion and crucible bottom crystallization occur is recorded as Delta TCritical point of；
7) And controlling the temperature gradient of the growth interface in the crystal pulling process, simultaneously keeping the temperature difference between the crucible bottom and the growth interface, and turning on the auxiliary heater when the temperature of the crucible bottom is reduced to a certain degree so as to correspondingly reduce the heating power of the main heater.
Compared with the prior art, the beneficial effects of the utility model are that:
the utility model discloses a and be not limited to key parameter's control, the indirect temperature gradient to the fuse-element of stack detects and controls on the basis such as the full-automatic of constant diameter control, temperature control, crystal pulling process, realizes low-cost and high-quality to the single crystal growth, makes the crystal pulling quality obtain the order of magnitude improvement.
Drawings
FIG. 1 is a schematic structural view of a Czochralski crystal growing furnace according to embodiment 1 of the present invention;
FIG. 2 is a plan view of a Czochralski crystal growing furnace according to embodiment 1 of the present invention;
fig. 3 is a schematic view of the longitudinal temperature gradient test range of embodiment 2 of the present invention;
FIG. 4 is a schematic view showing the distribution of the melt in the quartz crucible according to the depth of the melt in example 1 of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the present invention will be further described below with reference to the following embodiments and accompanying drawings.
Example 1
Referring to fig. 1 to 3, the czochralski crystal growing furnace of the present embodiment comprises a crucible and a heater, wherein an insulating layer is arranged on the periphery of the heater, the crucible of the present embodiment comprises a quartz crucible 1-3 for containing a melt 1-2 and a peripheral support crucible 1-4 sleeved outside the quartz crucible 1-3, the peripheral support crucible 1-4 is made of graphite or carbon-carbon composite material, and a single crystal 1-1 is pulled from the melt 1-2 in the crucible. The heater includes a main heater 2 surrounding the crucible and an auxiliary heater 2-2 disposed at the bottom of the crucible. The heat-insulating layer 3 is externally provided with a first window 4 in the vertical direction for an infrared thermometer 7 to measure temperature.
The heat-insulating layer 3 of the embodiment comprises a graphite heat-insulating inner cylinder 3-2 and an outer heat-insulating layer 3-1 which are sleeved inside and outside, a main furnace cylinder 5 is arranged outside the heat-insulating layer 3, and a first window 6 corresponding to the first window 4 is arranged on the main furnace cylinder 5.
The height of the main heater 2 in this embodiment is 1/3-2/3 of the crucible height. The auxiliary heater 2-2 is disc-shaped or bowl-shaped. The position of the infrared thermometer 7 is within a range of at least 2cm above and below the melt in the crucible in the vertical direction.
The method for measuring and controlling the vertical temperature gradient of the czochralski crystal growing furnace comprises the following steps:
(1) and determining the position of the measuring point of the temperature probe.
The upper side edge of the main heater is taken as a point O in the horizontal direction, the position which is vertically far from the point O in the downward direction is taken as the X-axis direction, and the X is used as the1、X2……XiAs a measuring point, the corresponding measured temperature is T1、T2……Ti。
(2) Temperature measurement and data processing.
And (3) taking out the temperature signal of each temperature measuring point by using a computer, and plotting the temperature data and the corresponding point of the position data in the vertical direction to obtain a T-X curve at a certain time. As shown in fig. 4.
(3) Determining the position X of the growth interface during isodiametric growthNoodleAnd the starting position X of the crucible bottomBottom。
Measuring and controlling growth interface to be constant, determining initial liquid level in the crucible according to corrosion line of silicon melt in inner wall of the crucible under a certain feeding amount, measuring vertical distance a between the corrosion line and upper edge of the graphite crucible after disassembling the furnace, and determining initial position b, X of the crucible during isodiametric growthNoodleA + b, starting position X of crucible bottomBottomL is the vertical depth of the liquid level of the silicon melt in the crucible, which is equal to the total height of the crucible-the distance of the silicon melt erosion line from the upper edge of the quartz crucible.
(4) And determining the bottom position and the temperature of the crucible in the crystal pulling process.
The position of the growth interface is relatively unchanged in the crystal pulling process, and the bottom position of the crucibleThe position X of the crucible bottom is arranged at a certain time or a certain equal diameter length along with the change of the rising position of the crucible shaftBottom(a + b + L) -crucible lifting distance, and substituting the crucible bottom temperature into the T-X curve obtained in the step (2) according to the crucible bottom position to calculate the temperature X by a computerBottom’。
(5) And (4) calculating the temperature difference.
The computer calculates and outputs the temperature difference between the crucible bottom and the growth interface at any time, wherein delta T is TBottom’-TNoodleThe variation of Δ T with time, constant path length, etc. may be output in a graph format.
(6) The determination of the boundary condition, the temperature of the melt is not directly measured in the embodiment, the value of the delta T is required to be proper, the actual operation is determined according to the pulling condition according to the actual condition, and when the single crystal distortion and the crucible bottom crystallization occur, the delta T is indicated to have a critical value and is determined as the delta T critical value.
(7) FIG. 4 is an ideal temperature gradient curve, which is beneficial to the stable growth of single crystal by keeping a proper temperature gradient along with the growth of the single crystal to the deep part of the liquid surface, and along with the penetration of the liquid surface to the crucible bottom, the temperature of the melt rises firstly and then falls, a negative temperature gradient is kept near the crucible bottom, the heat convection of the oxygen-enriched melt at the crucible bottom is inhibited or even not convected, the oxygen content of the single crystal is greatly reduced, meanwhile, the whole melt keeps a low temperature gradient, and various defects in the single crystal are greatly reduced. But the lower the temperature of the crucible bottom is, the better the temperature difference is, the temperature difference between the crucible bottom and the growth interface must be kept in order to avoid the serious deformation of the crucible bottom crystallization or single crystal, when the temperature of the crucible bottom is reduced to a certain degree, the bottom heater is opened, the heating power supply can be manually adjusted or automatically switched by a computer, the temperature difference and the power of the auxiliary heater are adjusted according to the following table,
| (Δ T- Δ T Critical)/. deg.C | 0-10 | 10-20 | >20 |
| Bottom heater power/kw | 5 | 2 | 0 |
The heating power of the corresponding main heater is correspondingly reduced, and other equal-diameter automatic control, power automatic control and temperature automatic control are kept unchanged, so that the growth of the single crystal can be kept fast and good,
(8) the temperature of the melt is kept in the optimum state during the growth of the single crystal, the temperature gradient of the growth interface is as small as possible and the crystal defects are greatly reduced in relation to the oxygen content in the silicon and the degree of lattice defects, as shown in FIG. 4, in order to minimize the temperature gradient of the melt near the growth liquid level, the maximum temperature T of the melt should be kept as high as possiblemaxAs small as possible, i.e. keeping the temperature difference between the maximum temperature of the melt and the growth interface to a minimum, Δ Tmax＝Tmax–TNoodleThe temperature difference can be calculated at any time by the graph of fig. 4, and Δ T can be outputted in the form of a graphmaxCurve of relationship with the equivalent crystal length.
In a conventional crystal pulling process, the heating power and the melt temperature are usually controlled at a set pulling rate, and when the actual pulling rate is higher than the set pulling rate, the heating power is increased and the melt temperature is raised, and when the actual pulling rate is higher than the set pulling rate, the heating power is reduced and the temperature is reduced, so that the actual pulling rate is consistent with the set pulling rate through the temperature compensation. However, there is no necessary relation between the pulling speed and the quality of the single crystal, such temperature control lacks scientific basis, and the maximum temperature difference Δ T introduced into the meltmaxThen, the scientific basis of temperature control is provided. Based on previous data from successful pulls, a reasonable Δ T can be setmaxSeries of values, Delta T during actual crystal pullingmaxIs greater than the set valueAnd (5) cooling, and keeping the temperature or slightly heating when the temperature is lower than a set value so as to obtain the single crystal with lower defects.
The highest temperature of the melt and the crucible bottom temperature are as low as possible, and the lattice defect and the oxygen content are all reduced to the minimum, so that the crystal pulling process is scientifically and effectively controlled, but the temperature distribution of the melt is related to the thermal field design and mainly depends on the design of a main heater, the ratio of the height of the heater to the height of the melt, the structure of the heater is a main factor influencing the temperature distribution of the melt, and the optimal heater design is that under the condition that a bottom-opening heater is not used in the constant-diameter process, the delta T of the melt can be keptmaxAs small as possible, this can both increase the pull rate and obtain high quality single crystals with low oxygen and low defect density, and these temperature data during pulling are of guiding significance for improving thermal field design.
The temperature of each longitudinal position point outside the heat-insulating inner cylinder is measured, so that the temperature and the temperature gradient of each point of a melt in the crucible are monitored, a computer is used for storing and statistically analyzing mass data in the whole crystal pulling process, complete data information is provided for quality analysis and quality management of a single crystal, in actual operation, after the single crystal is pulled, sampling detection is usually carried out at a certain position, and correlation analysis is carried out on detection data of a sample and crystal pulling data of the sample position, so that better control parameters are found for subsequent crystal pulling. On the other hand, abnormal melt temperature distribution which possibly occurs in the crystal pulling process is found out through a computer, a single crystal part at a corresponding position is found out, sampling analysis and detection are carried out, unqualified products can be prevented from flowing into a subsequent procedure, and therefore quality loss is reduced.
Example 2
The czochralski crystal growing furnace and the method for measuring and controlling the longitudinal temperature gradient thereof in this embodiment are the same as those in embodiment 1 except that the structure and the mode of temperature measurement are different from those in embodiment 1, and are not described herein again.
The heat-insulating layer of the embodiment is not provided with the first window, and the main furnace cylinder is not provided with the second window. Thermocouple temperature probes distributed along the vertical direction are arranged on the outer heat-insulating layer 3-1.
Claims (8)
1. The utility model provides a czochralski crystal growing furnace, includes crucible and heater, the periphery of heater is equipped with the heat preservation, its characterized in that:
the crucible comprises a quartz crucible for containing the melt and a peripheral supporting crucible sleeved outside the quartz crucible; the heater comprises a main heater surrounding the crucible and an auxiliary heater arranged at the bottom of the crucible; a plurality of thermocouple temperature probes are arranged outside the heat insulation layer at intervals in the vertical direction, or a first window for an infrared thermometer to measure temperature is arranged on the heat insulation layer.
2. The czochralski crystal growing furnace of claim 1, wherein: the height of the main heater is 1/3-2/3 of the height of the crucible.
3. The czochralski crystal growing furnace of claim 1, wherein: the heat-insulating layer comprises a graphite heat-insulating inner cylinder positioned at the inner layer and an outer heat-insulating layer positioned at the outer layer.
4. The czochralski crystal growing furnace of claim 3, wherein: the outer heat-insulating layer is made of carbon felt or expanded graphite.
5. The czochralski crystal growing furnace of claim 1, wherein: the peripheral support crucible is made of graphite or carbon-carbon composite material.
6. The czochralski crystal growing furnace of claim 1, wherein: the heat preservation layer is externally provided with a main furnace cylinder, and the main furnace cylinder is provided with a first window corresponding to the first window.
7. The czochralski crystal growing furnace of claim 1, wherein: the auxiliary heater is disc-shaped or bowl-shaped.
8. The czochralski crystal growing furnace of claim 1, wherein: the position of the thermodetector is within a range which is at least 2cm higher and lower than the melt in the crucible in the vertical direction.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110284186A (en) * | 2019-07-30 | 2019-09-27 | 刘冬雯 | A kind of measurement control method of czochralski crystal growing furnace and its longitudinal temperature gradient |
| CN115558991A (en) * | 2022-10-31 | 2023-01-03 | 晶科能源股份有限公司 | Crucible structure |
| CN116607215A (en) * | 2023-07-20 | 2023-08-18 | 苏州南智芯材科技有限公司 | Growth method and device of lithium niobate crystal |
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2019
- 2019-07-30 CN CN201921220102.9U patent/CN210596315U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110284186A (en) * | 2019-07-30 | 2019-09-27 | 刘冬雯 | A kind of measurement control method of czochralski crystal growing furnace and its longitudinal temperature gradient |
| CN110284186B (en) * | 2019-07-30 | 2024-02-06 | 刘冬雯 | Czochralski single crystal furnace and method for measuring and controlling longitudinal temperature gradient of Czochralski single crystal furnace |
| CN115558991A (en) * | 2022-10-31 | 2023-01-03 | 晶科能源股份有限公司 | Crucible structure |
| CN115558991B (en) * | 2022-10-31 | 2023-10-31 | 晶科能源股份有限公司 | Crucible structure |
| CN116607215A (en) * | 2023-07-20 | 2023-08-18 | 苏州南智芯材科技有限公司 | Growth method and device of lithium niobate crystal |
| CN116607215B (en) * | 2023-07-20 | 2023-10-17 | 苏州南智芯材科技有限公司 | Growth method and device of lithium niobate crystal |
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