CN113061983A - Crystal pulling furnace for semiconductor monocrystalline silicon - Google Patents
Crystal pulling furnace for semiconductor monocrystalline silicon Download PDFInfo
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- CN113061983A CN113061983A CN202110428621.XA CN202110428621A CN113061983A CN 113061983 A CN113061983 A CN 113061983A CN 202110428621 A CN202110428621 A CN 202110428621A CN 113061983 A CN113061983 A CN 113061983A
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- 239000013078 crystal Substances 0.000 title claims abstract description 101
- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 17
- 239000000155 melt Substances 0.000 claims abstract description 26
- 238000010438 heat treatment Methods 0.000 claims abstract description 12
- 239000000523 sample Substances 0.000 claims description 21
- 239000010453 quartz Substances 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 10
- 229920000049 Carbon (fiber) Polymers 0.000 claims description 10
- CREMABGTGYGIQB-UHFFFAOYSA-N carbon carbon Chemical compound C.C CREMABGTGYGIQB-UHFFFAOYSA-N 0.000 claims description 10
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- 229910052760 oxygen Inorganic materials 0.000 abstract description 67
- 239000001301 oxygen Substances 0.000 abstract description 67
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 65
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 32
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Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Abstract
The invention relates to a crystal pulling furnace for semiconductor monocrystalline silicon, and belongs to the technical field of monocrystalline silicon production. The furnace comprises a furnace body, a crucible and a heater, wherein the crucible and the heater are arranged in the furnace body; the heater is arranged on the periphery of the crucible and comprises an upper heater and a lower heater which are arranged up and down at a certain distance, the heating areas of the upper heater and the lower heater are 1/4-1/2 of the height of the crucible, and the interval between the heating areas of the upper heater and the lower heater is 50 mm-1/3 of the height of the crucible. The temperature gradient of the melt in the crucible and the temperature at the bottom of the crucible are accurately controlled, so that high-quality silicon single crystals with low defect density and low COP and requirements of various semiconductor silicon devices on the oxygen content of the single crystals are obtained, the stability and consistency of the quality of the silicon single crystals are greatly improved, and an effective control method is provided for the crystal growth of the semiconductor silicon single crystals.
Description
Technical Field
The invention relates to the technical field of monocrystalline silicon production, in particular to a crystal pulling furnace for semiconductor monocrystalline silicon.
Background
At present, the mainstream semiconductor large-diameter crystal pulling mainly adopts a superconducting magnetic field crystal pulling technology, 3000 plus 8000 Gauss intense magnetic field is adopted, convection of silicon melt in a crucible is greatly inhibited, the stability of the melt is greatly improved, crystal growth can be realized under the condition of extremely low crucible rotation of about 0.5rpm, the oxygen content in silicon can be reduced to be below 12ppma, various crystal defects and vacancy type defect density COP are well controlled, but the obvious disadvantages caused by low crucible rotation, such as radial fluctuation caused by asymmetry of a thermal field, uneven melt temperature and impurity concentration caused by insufficient stirring of the melt, and serious crystal defects, such as primary stacking fault, thermal Oxidation Induced Stacking Fault (OISF) and the like, are often found in crystal defect detection, so that the innovation of the oxygen content under the condition of no magnetic field and conventional crucible rotation and the crystal defect control technology becomes another choice.
Research shows that the type and density of grown-in point defects in a silicon crystal lattice are related to the ratio of V/G (T), V is the crystal growth speed, G (T) is the temperature gradient across a solid-liquid interface, generally, the V/G ratio has a critical value, more than the critical value, the crystal grows into vacancy defects, the density of the vacancy point defects is larger when the ratio of the V/G ratio is larger, less than the critical value, the crystal grows into interstitial defects, the density of the interstitial point defects is larger when the ratio of the V/G ratio is lower, generally, the vacancy defects are formed in the central region of the crystal, the interstitial defects are formed in the edge region, crystals of two types of point defects are simultaneously formed on the same growth interface, OISF rings are easily formed at the junction of the vacancy type and interstitial type crystals, and the OISF rings are large-size surface defects visible under the spotlight, once formed, results in a scrap piece.
The first condition of crystal growth is to avoid the formation of OISF ring, and the crystal growth can be controlled from two directions, one is to keep the V/G ratio on the whole growth interface as small as possible, so that the whole growth interface is a gap type defect, and the V can be small by reducing the pulling speed. The other direction is to keep the V/G ratio on the whole growth interface as large as possible to ensure that the whole interface is vacancy type defects, generally, methods of increasing the pulling speed and reducing G (T) are adopted, so that the V/G ratio of the whole interface is kept to be larger than a critical value, the pulling speed is increased, the heat transfer of the single crystal needs to be increased, the single crystal is rapidly cooled, the temperature gradient of the crystal is correspondingly increased, a large amount of vacancy type point defects which are just formed are favorably discharged out of the crystal body through slippage, and meanwhile, the mutual aggregation of the point defects is effectively prevented to form micro defects with larger sizes. The most effective way to reduce G (T) is to reduce the temperature gradient of the melt.
The behavior of interstitial oxygen in silicon is not only related to the interstitial oxygen content, but also to the thermal process of silicon device fabrication, the density of oxygen precipitates and their induced defects and their size, on the one hand, have an intrinsic gettering effect, and on the other hand, defects close to the device size seriously affect the device performance and yield, so the concentration of the interstitial oxygen content of the semiconductor silicon single crystal cannot be too high or too low, and is usually controlled within a suitable range.
The magnetic field crystal pulling mainly controls the oxygen content through crucible rotation, a superconducting magnetic field with high magnetic field strength can generally control low crucible rotation crystal pulling below 1rpm, the oxygen content can be controlled below 12ppma, a general magnetic field (1000 gauss) can rotate crystal pulling in a crucible at 3-5rpm, the oxygen content is about 15ppma, special thermal field design is required for controlling the oxygen content of non-magnetic field crystal pulling, research shows that the size of the oxygen content in silicon is strongly related to the temperature of the crucible bottom, the oxygen in silicon comes from a quartz crucible, liquid silicon material corrodes the inner wall of the quartz crucible at high temperature, the oxygen in the crucible enters a melt and enters the whole crucible along with the flow of the melt, most of the oxygen (more than 95%) volatilizes from the liquid level to enter protective gas in a SiO gas mode, a small amount of oxygen enters a silicon crystal through segregation, and the low oxygen content in silicon is determined to be the size of the oxygen content in the silicon melt near a growth interface, the growth interface is far away from the crucible wall, and the oxygen in the melt near the growth interface comes from two ways, one is that oxygen enters the vicinity of the growth interface from a high-concentration region through diffusion, the other is that the melt with high-concentration oxygen near the crucible wall enters the vicinity of the growth interface through transmission by thermal convection, especially after the melt at the bottom of the crucible under the growth interface vertically enters the vicinity of the growth interface through thermal convection, the volatilization of oxygen is prevented by the silicon crystal above, oxygen enters crystal lattices through segregation, the oxygen content in the crystal is mainly controlled by controlling the longitudinal temperature gradient in the melt, so that the size of the thermal convection of the melt is controlled, and the melt rich in oxygen near the quartz crucible wall is rapidly transmitted to the crystal growth region to achieve the purpose of oxygen control. Under the condition of ensuring that the bottom of the crucible is not crystallized under the extreme condition, when the temperature of the bottom of the crucible is kept to be the lowest as much as possible, the temperature gradient near the bottom of the crucible is negative, so that the thermal convection and even no convection can be obviously reduced, a melt with high concentration of oxygen near the wall of the crucible cannot enter the vicinity of a growth interface, a relatively closed area is formed below a solid-liquid surface for crystal growth, a single crystal with extremely low oxygen content can be obtained, and the effect of oxygen reduction even exceeds the effect of crystal pulling of a superconducting magnetic field.
In summary, the defect of the nonmagnetic semiconductor silicon single crystal mainly depends on the temperature gradient of the melt under the solid-liquid interface of the crystal growth, and the oxygen content of the gap in the silicon mainly depends on the temperature at the bottom of the crucible, therefore, a thermocouple temperature probe can be arranged at the longitudinal position of the inner cylinder of the heat insulation layer at the outer side of the heater to indirectly measure the temperature gradient of the melt, a thermocouple is arranged at the center of the crucible support at the bottom of the crucible to monitor the temperature at the bottom of the crucible, or a high-temperature infrared thermometer is arranged at the bottom of the furnace to monitor the temperature at the bottom of the crucible, and the temperature gradient of the melt and the temperature control at the bottom of the crucible are realized through the combination of the heater, so that the control of the crystal.
Disclosure of Invention
The invention aims to provide a crystal pulling furnace of semiconductor monocrystalline silicon, which can obtain high-quality silicon monocrystalline with low defect density and low COP and various semiconductor silicon devices with requirements on the oxygen content of the monocrystalline.
In order to achieve the purpose, the crystal pulling furnace for the semiconductor monocrystalline silicon comprises a furnace body, a crucible and a heater, wherein the crucible and the heater are arranged in the furnace body;
the heater is arranged on the periphery of the crucible and comprises an upper heater and a lower heater which are arranged up and down at a certain interval, the heating areas of the upper heater and the lower heater are 1/4-1/2 of the height of the crucible, and the interval between the heating areas of the upper heater and the lower heater is 50 mm-1/3 of the height of the crucible.
Optionally, in an embodiment, the crucible includes a quartz crucible for containing the melt and a graphite or carbon-carbon fiber crucible wrapped outside the quartz crucible, and the heater is disposed outside the graphite or carbon-carbon fiber crucible.
Optionally, in an embodiment, a crucible shaft is disposed at the bottom of the graphite or carbon-carbon fiber crucible, and the temperature tester is an infrared temperature tester disposed at the bottom end of the crucible shaft.
Optionally, in one embodiment, the crucible shaft has an optical channel along an axial direction, and the infrared light of the infrared temperature tester passes through the optical channel.
Optionally, in an embodiment, an insulating inner cylinder is disposed in the furnace body, and the insulating inner cylinder is disposed outside the heater.
Optionally, in an embodiment, the gradient temperature measuring device includes thermocouple temperature probes fixed on the inner insulating cylinder at intervals in the vertical direction.
Optionally, in one embodiment, all thermocouple temperature probes are collected in a quartz or ceramic header pipe, and the header pipe penetrates through the insulating layer and connects the data signal line of each thermocouple temperature probe with the corresponding data line of the furnace body, and finally is connected with the signal acquisition and control system.
Optionally, in an embodiment, a bottom heater is arranged right below the bottom of the crucible.
Compared with the prior art, the invention has the advantages that:
according to the invention, through temperature monitoring and power regulation of the heater, the temperature gradient of the melt in the crucible and the temperature at the bottom of the crucible are accurately controlled, so that the high-quality silicon single crystal with low defect density and low COP and the requirements of various semiconductor silicon devices on the oxygen content of the single crystal are obtained, the stability and consistency of the quality of the silicon single crystal are greatly improved, and an effective control method is provided for the crystal growth of the semiconductor silicon single crystal.
Drawings
FIG. 1 is a schematic view of a crystal pulling furnace for semiconductor single crystal silicon in accordance with an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a heater according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be further described with reference to the following embodiments and accompanying drawings. It is to be understood that the embodiments described are only a few embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the described embodiments without any inventive step, are within the scope of protection of the invention.
Unless defined otherwise, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this invention belongs. The use of the word "comprise" or "comprises", and the like, in the context of this application, is intended to mean that the elements or items listed before that word, in addition to those listed after that word, do not exclude other elements or items. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", and the like are used merely to indicate relative positional relationships, and when the absolute position of the object being described is changed, the relative positional relationships may also be changed accordingly.
Examples
Referring to fig. 1, the crystal pulling furnace for semiconductor monocrystalline silicon of the present embodiment includes a furnace body 100, a crucible disposed in the furnace body 100, and a heater 200, wherein a gradient temperature measuring device is disposed in the furnace body, and a temperature tester is disposed at the bottom of the furnace body.
In this embodiment, the heater is disposed at the periphery of the crucible, and includes an upper heater 201 and a lower heater 202 disposed above and below at a certain distance. The heating zone of a conventional thermal field heater highly covers the entire height of the melt in the quartz crucible. The height of the heating area of the low thermal field heater is far less than the height of the melt in the crucible so as to achieve the effect of reducing oxygen, in the embodiment, two independently controlled upper heaters 201 and lower heaters 202 are arranged outside the crucible, the structures of the upper heaters and the lower heaters are shown in fig. 2, the height of the heating area of the upper heaters and the lower heaters is 1/4-1/2 of the height of the melt in the quartz crucible or the crucible, and the interval between the heating areas of the upper heaters and the lower heaters is 50 mm-1/3 of the height of the crucible.
In this embodiment, the crucible includes a quartz crucible 300 for containing the melt and a graphite or carbon-carbon fiber crucible 400 wrapped outside the quartz crucible 300, and the heater is disposed outside the graphite or carbon-carbon fiber crucible 400. The bottom of the graphite or carbon-carbon fiber crucible 400 is provided with a crucible shaft 401, and the temperature tester is an infrared temperature tester 500 arranged at the bottom end of the crucible shaft 401. The crucible shaft 401 has an optical passage 402 along the axial direction, and the infrared light of the infrared temperature tester 500 passes through the optical passage 402.
The furnace body 100 is internally provided with a heat-insulating inner cylinder 600, and the heat-insulating inner cylinder 600 is arranged outside the heater. The gradient temperature measuring device comprises thermocouple temperature probes 700 fixed on the heat-insulating inner cylinder 600 at intervals along the vertical direction. All the thermocouple temperature probes 700 are gathered in a quartz or ceramic main pipe, and the main pipe penetrates through the heat insulation layer and connects the data signal lines of all the thermocouple temperature probes 700 with the corresponding data lines of the furnace body, and finally is connected with a signal acquisition and control system. Through the rotation of the heat preservation inner cylinder 600, the setting position of the thermocouple temperature probe 700 is adjusted to be the middle of the electrode pins of the upper heater and the lower heater in the circumferential direction, the height of the heat preservation inner cylinder 600 is adjusted, so that the first temperature probe is flush with the growth interface in the horizontal direction, one temperature probe is arranged downwards in the vertical direction at intervals of 2-3cm, and the number of the probes is about 10.
Data processing and calculation of melt temperature gradient, after a first temperature probe is adjusted to be level with a growth liquid level, the vertical distance between each probe and a growth interface is the distance between each probe and the first probe, the temperature and the distance of each probe are plotted, and the linear regression of a least square method is applied to obtain the melt temperature gradient according to the linear slope, wherein the data processing is at least 2-3 probes, the maximum is the data of all probes, and the optimization principle is that firstly, the linear regression data R is linear regression data2And secondly, more point data are adopted as much as possible, so that the computer can give temperature gradient data in real time.
A bottom heater (not shown) is arranged right below the bottom of the crucible, and the bottom heater is provided with an independent power supply. The upper heater 201 and the lower heater 202 are provided with electrode pins 203, and the electrode pins of the upper heater and the lower heater are respectively connected with two independent power supplies. The center of the crucible shaft is hollow with 10-50mm, the bottom of the graphite or carbon-carbon fiber crucible 400 is perforated from the lower part to the quartz crucible 300 with a distance of 5-10mm, the aperture is close to the hollow aperture of the crucible shaft, the outside of the furnace bottom is just provided with an infrared temperature tester 500 to the central line position of the crucible shaft, and the infrared light signal at the bottom of the crucible is received by the infrared temperature tester through an optical channel, thereby realizing the measurement of the temperature at the bottom of the crucible.
The method for controlling crystal defects and oxygen content in the crystal growth process of the embodiment is as follows:
the most core factors influencing the crystal defects and the oxygen content are the temperature gradient of a melt under a growth interface and the temperature of the crucible bottom, and the crystal defects and the oxygen content in the monocrystalline silicon are controlled by monitoring and adjusting the two core factors. The invention is provided with three independently controlled heaters, and the functions and the effects of the heaters are as follows:
1. the upper heater is used for melting materials, maintaining the heat balance of crystal growth, and generally controlling a growth interface to be slightly higher than the central plane of a main heating area of the upper heater.
2. Lower heater, melting material, regulating temperature of crucible bottom and temperature gradient of melt
3. The bottom heater is used for melting materials, so that the melting efficiency is improved, the leakage caused by crucible breakage due to recrystallization of the molten silicon materials is prevented, bottom opening is performed in the crystal pulling process, and the temperature at the bottom of the crucible can be greatly improved to increase the oxygen content.
Different semiconductor silicon devices have different requirements on the oxygen content and crystal defects of silicon single crystals, and the oxygen content of the devices is divided into three conditions according to the control of the crystal growth process:
mono, low oxygen single crystal
The lower the oxygen content in the silicon is required to be, the better the IGBT, the high-voltage silicon stack, the crystalline silicon battery and the like are, under the condition, after the material melting is finished, the lower heater and the bottom heater are closed, the temperature regulation in the whole crystal pulling process is regulated by the power of the upper heater, and the regulation principle is met, 1, the smooth proceeding of the growth of the single crystal is maintained, and the power regulation ensures that the abnormity does not occur in the whole processes of temperature stabilization, welding, seeding, shouldering, shoulder rotating, equal diameter and ending, and the equal diameter growth ensures that the single crystal rod does not deform or distort. 2. The temperature of the crucible bottom is ensured to be as low as possible, but the crystallization of the crucible bottom can not be formed, thereby obtaining the low-oxygen single crystal.
The traditional crystal pulling control associates constant diameter control with temperature control, and carries out temperature compensation by setting a set pulling rate and comparing the set pulling rate with an actual pulling rate, and has the defects that the pulling rate is always fluctuated when the diameter of a single crystal is fluctuated, the temperature fluctuation is easily caused by the fluctuation of the pulling rate, the disconnection is easily caused, and the defects of the crystal are increased. As an operable method, it is recommended to track the temperature curve of the crucible bottom in the crystal pulling process with smooth crystal pulling and excellent quality, set the temperature curve as the set temperature curve of the crucible bottom, adjust the power of the upper heater around the set temperature curve, and continuously optimize the temperature curve on the basis to obtain stable and consistent high-quality single crystals.
Second, medium oxygen single crystal with oxygen content in certain range
The integrated circuit silicon wafer forms a surface denuded zone through an intrinsic gettering process, which requires that the oxygen content of a silicon single crystal is within a proper range, and the electrical performance and the yield of a device are affected by excessively high and excessively low oxygen contents, generally speaking, the head oxygen content of the single crystal is the highest, and then after the oxygen content is gradually reduced to the lowest point, the tail oxygen content is increased to a certain extent, in this case, the oxygen content index can be satisfied by adjusting the oxygen content to a suitable range by cutting the height and compensating the height, and for this purpose, the change of the oxygen content from the beginning to the end of the single crystal is measured first, and the temperature change curve of the crucible bottom in the crystal pulling process is tracked, the optimization scheme of the crystal pulling process is determined by comparison, if the oxygen content is not large beyond the range, the oxygen content can be increased or decreased by increasing or decreasing the rotating speed of the crucible, and the oxygen content is adjusted by adjusting the set temperature of the crucible bottom if the oxygen content is large beyond the range. The temperature at the bottom of the crucible can both be adjusted to the power of upper and lower heater that increases and decreases, and the principle of adjusting follows the temperature gradient of fuse-element and is preferred, promptly, when the same power of upper and lower heater increases and decreases, the lower person of temperature gradient of fuse-element is preferred, and the analysis of accessible real-time data judges in the crystal pulling process. Secondly, the temperature is adjusted as appropriate, the temperature gradient of the melt under the growth interface is not increased as far as possible, the oxygen content is appropriate, and the optimization is not pursued. By continuously optimizing the process, the optimal set temperature curve at the bottom of the crucible is obtained, and finally the high-quality silicon single crystal with oxygen content in a proper range and less crystal defects is obtained.
III, III high oxygen single crystal
For special devices, high oxygen concentration single crystals are required, and there are also special kinds of single crystals, for example, heavily antimony-doped single crystals, in which conventional pulling controls the oxygen content of the single crystal to be particularly low, the oxygen content needs to be greatly increased, and the oxygen content may be increased from beginning to end, in which case special pulling controls are required.
The invention is provided with the lower heater and the bottom heater which are independent to meet the requirement of the high-oxygen single crystal, and the change of the oxygen content of the conventional single crystal from beginning to end and the temperature change curve of the crucible bottom in the crystal pulling process are measured at first, and then the set temperature curve of the crucible bottom is designed. Because the oxygen content is required to be greatly increased, the power of the lower heater or the bottom heater is required to be greatly increased, the regulation principle is that the efficiency is prior, namely, when the power of the upper heater and the power of the bottom heater are increased, the temperature of the bottom of the crucible is preferably increased, the distances from the bottom of the crucible to the upper heater and the bottom heater are different in the crystal pulling process, the heating efficiency is different, the temperature can be judged through the analysis of real-time data, the optimal set temperature curve of the bottom of the crucible is obtained through continuous optimization of the process, and finally the silicon single crystal with the oxygen content in the qualified range is obtained.
Claims (8)
1. A crystal pulling furnace of semiconductor monocrystalline silicon comprises a furnace body, a crucible and a heater, wherein the crucible and the heater are arranged in the furnace body;
the heater is arranged on the periphery of the crucible and comprises an upper heater and a lower heater which are arranged up and down at a certain interval, the heating areas of the upper heater and the lower heater are 1/4-1/2 of the height of the crucible, and the interval between the heating areas of the upper heater and the lower heater is 50 mm-1/3 of the height of the crucible.
2. A crystal pulling furnace as claimed in claim 1, wherein the crucible includes a quartz crucible for containing the melt and a graphite or carbon-carbon fiber crucible wrapped around the quartz crucible, and the heater is disposed outside the graphite or carbon-carbon fiber crucible.
3. A crystal pulling furnace for semiconductor monocrystalline silicon as claimed in claim 1, characterized in that the graphite or carbon-carbon fiber crucible is provided at its bottom with a crucible shaft, and the temperature measuring instrument is an infrared temperature measuring instrument provided at the bottom end of the crucible shaft.
4. A crystal pulling furnace for semiconductor monocrystalline silicon as set forth in claim 3, characterized in that the crucible shaft has an optical passage in the axial direction through which the infrared light of the infrared temperature tester passes.
5. A crystal pulling furnace for semiconductor single crystal silicon as claimed in claim 1, wherein a heat-insulating inner cylinder is provided in the furnace body, and the heat-insulating inner cylinder is provided outside the heater.
6. A crystal pulling furnace as defined in claim 5, wherein the gradient temperature measuring device includes thermocouple temperature probes fixed to the inner insulating cylinder at spaced vertical intervals.
7. A crystal pulling furnace for semiconductor monocrystalline silicon as claimed in claim 6, characterized in that all the thermocouple temperature probes are grouped together in a quartz or ceramic manifold which penetrates the insulating layer and connects the data signal lines of the thermocouple temperature probes to the corresponding data lines of the furnace body and finally to the signal acquisition and control system.
8. A crystal pulling furnace for semiconductor monocrystalline silicon as set forth in claim 1, wherein a bottom heater is provided directly below the bottom of the crucible.
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| CN202110428621.XA CN113061983A (en) | 2021-04-21 | 2021-04-21 | Crystal pulling furnace for semiconductor monocrystalline silicon |
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| CN202110428621.XA CN113061983A (en) | 2021-04-21 | 2021-04-21 | Crystal pulling furnace for semiconductor monocrystalline silicon |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| CN115233306A (en) * | 2022-09-25 | 2022-10-25 | 杭州中欣晶圆半导体股份有限公司 | Heating device and method capable of effectively reducing carbon impurity content in silicon wafer |
| CN117431620A (en) * | 2023-12-18 | 2024-01-23 | 麦斯克电子材料股份有限公司 | Crystal pulling method for reducing oxidation induced stacking fault of large-size silicon single crystal |
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