CN210579220U - Antistatic substrate and silicon microphone using the same - Google Patents
Antistatic substrate and silicon microphone using the same Download PDFInfo
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- CN210579220U CN210579220U CN201921432707.4U CN201921432707U CN210579220U CN 210579220 U CN210579220 U CN 210579220U CN 201921432707 U CN201921432707 U CN 201921432707U CN 210579220 U CN210579220 U CN 210579220U
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- 239000000758 substrate Substances 0.000 title claims abstract description 80
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 26
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 26
- 239000010703 silicon Substances 0.000 title claims abstract description 26
- 230000003068 static effect Effects 0.000 claims abstract description 37
- 230000005611 electricity Effects 0.000 claims abstract description 29
- 239000002184 metal Substances 0.000 claims description 29
- 229910052751 metal Inorganic materials 0.000 claims description 29
- 229910000679 solder Inorganic materials 0.000 claims description 23
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000010410 layer Substances 0.000 claims 25
- 239000011241 protective layer Substances 0.000 claims 3
- 230000005465 channeling Effects 0.000 claims 2
- 239000011159 matrix material Substances 0.000 claims 1
- 230000001755 vocal effect Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 description 7
- 230000000149 penetrating effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000005236 sound signal Effects 0.000 description 4
- 238000005034 decoration Methods 0.000 description 2
- 230000008030 elimination Effects 0.000 description 2
- 238000003379 elimination reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
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- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
Abstract
The utility model provides an antistatic substrate and adopt silicon microphone of this antistatic substrate, antistatic substrate includes insulating base member and runs through insulating base member's vocal hole, the base plate still includes: the conductive connecting layer is arranged on the side wall of the sound hole; at least two conductive layers transversely arranged in the insulating base body and electrically connected through the conductive connecting layer, wherein the area of the uppermost conductive layer around the sound hole is exposed on the upper surface of the insulating base body to form an electrostatic conductive ring, and part of the area of the lowermost conductive layer is exposed on the lower surface of the insulating base body to form an electric contact area which can be grounded through a conductive device; static electricity generated around the acoustic hole can be conducted to the ground through the electrostatic conductive ring, the conductive connection layer, and the electrical contact region. The utility model has the advantages that, can eliminate the static of base plate top fast, avoid it to influence the device performance.
Description
Technical Field
The utility model relates to a micro-electromechanical technology field especially relates to an antistatic substrate and adopt silicon microphone of this antistatic substrate.
Background
The existing MEMS (Micro-Electro-Mechanical System) silicon microphone has the advantages of small size, high signal-to-noise ratio, etc., but with the wide application of microelectronic technology and the increasingly complex electromagnetic environment, the electromagnetic field effect of electrostatic discharge, such as electromagnetic interference, etc., has a great influence on the performance of electronic products, and electrostatic discharge may break down electronic devices inadvertently, causing significant loss. To reduce this occurrence, further improvements in the packaging of existing MEMS silicon microphones are needed.
SUMMERY OF THE UTILITY MODEL
The utility model aims to solve the technical problem that a silicon microphone of antistatic substrate and this antistatic substrate of adoption is provided, it can conduct static fast, avoids the performance of static influence silicon microphone.
In order to solve the above problem, the utility model provides an antistatic substrate, include insulating base member and run through insulating base member's sound hole, the base plate still includes: the conductive connecting layer is arranged on the side wall of the sound hole; at least two conductive layers transversely arranged in the insulating base body and electrically connected through the conductive connecting layer, wherein the area of the uppermost conductive layer around the sound hole is exposed on the upper surface of the insulating base body to form an electrostatic conductive ring, and part of the area of the lowermost conductive layer is exposed on the lower surface of the insulating base body to form an electric contact area which can be grounded through a conductive device; static electricity generated around the acoustic hole can be conducted to the ground through the electrostatic conductive ring, the conductive connection layer, and the electrical contact region.
Further, the insulating base body comprises a body arranged between the conducting layers, an upper solder mask layer covering the conducting layer on the uppermost layer and a lower solder mask layer covering the conducting layer on the lowermost layer, the electrostatic conductive ring is formed in an area, which is not covered by the upper solder mask layer, of the conducting layer on the uppermost layer, and the electric contact area is formed in an area, which is not covered by the lower solder mask layer, of the conducting layer on the lowermost layer.
Further, the electrical contact region is located at an edge of the lowermost conductive layer.
Further, the electrical contact region is in the shape of a closed loop.
Further, the shape of the sound hole is circular or polygonal.
Furthermore, the antistatic substrate further comprises at least one electrical connecting channel, the electrical connecting channel is longitudinally arranged in the insulating base body, the conducting layers are further electrically connected through the electrical connecting channel, and static electricity generated around the sound hole can be further conducted to a grounding position through the electrostatic conducting ring, the electrical connecting channel and the electrical contact area.
Further, the electrical connection channel is a metal through hole or a metal blind hole.
Further, the electrical connection channel is disposed between the electrical contact region and the acoustic aperture.
Further, on the upper surface of the insulating base body, a partial area of the uppermost conductive layer is exposed to form an electrostatic dredging area.
Further, the static electricity dredging area is arranged at the corner of the uppermost conducting layer.
Further, the shape of the static electricity dredging area is circular or polygonal.
Further, on the lower surface of the insulating substrate, a partial region of the lowermost conductive layer is exposed to form a mark region.
Further, the identification region is disposed between the electrical contact region and the acoustic aperture.
Furthermore, at least one metal protection layer is arranged on the surface of at least one of the conductive connecting layer, the electrostatic conductive ring, the electric contact region, the electrostatic dredging region and the identification region.
Furthermore, the uppermost metal protection layer is a gold layer.
The utility model also provides a silicon microphone, it includes: the conductive layer is arranged on the side wall of the shell, the shell is provided with a grounding end, and the conductive layer is electrically connected with the grounding end; according to the antistatic substrate, the housing and the antistatic substrate form a cavity, and the conductive layer on the side wall of the housing is electrically connected with the electric contact area of the antistatic substrate so as to ground the conductive layer at the lowest layer of the antistatic substrate; an acoustic assembly disposed within the cavity.
Further, the acoustic assembly comprises an MEMS chip, and the MEMS chip is arranged on the antistatic substrate and corresponds to the sound hole.
Further, the acoustic assembly includes a MEMS chip disposed on the housing.
Further, the MEMS chip is arranged on the surface of the shell opposite to the antistatic substrate.
The utility model has the advantages of, the static that produces around the phonate hole conducts to ground connection department through static conduction ring, electrically conductive articulamentum and conducting layer, can realize the purpose of rapid elimination static.
Drawings
Fig. 1 is a schematic top view of a first embodiment of an antistatic substrate according to the present invention;
fig. 2 is a schematic bottom view of a first embodiment of the antistatic substrate of the present invention;
3 FIG. 3 3 3 is 3 a 3 cross 3- 3 sectional 3 view 3 taken 3 along 3 line 3 A 3- 3 A 3 of 3 FIG. 31 3; 3
Fig. 4 is a schematic top view of the structure of fig. 1 with the upper solder mask layer 102 removed;
fig. 5 is a schematic bottom view of the structure of fig. 2 with the lower solder mask layer 102 removed;
fig. 6 is a schematic top view of a second embodiment of the antistatic substrate of the present invention;
FIG. 7 is a cross-sectional view taken along line B-B of FIG. 6;
fig. 8 is a schematic top view of a third embodiment of the antistatic substrate of the present invention;
fig. 9 is a schematic bottom view of a fourth embodiment of the antistatic substrate of the present invention;
figure 10 is a schematic diagram of the structure of a first embodiment of a silicon microphone;
figure 11 is a schematic diagram of the structure of a second embodiment of the silicon microphone.
Detailed Description
The following describes in detail the embodiments of the antistatic substrate and the silicon microphone using the antistatic substrate provided by the present invention with reference to the accompanying drawings.
3 fig. 31 3 is 3 a 3 schematic 3 top 3 view 3 of 3 a 3 first 3 embodiment 3 of 3 an 3 antistatic 3 substrate 3 according 3 to 3 the 3 present 3 invention 3, 3 fig. 32 3 is 3 a 3 schematic 3 bottom 3 view 3 of 3 the 3 antistatic 3 substrate 3 according 3 to 3 the 3 present 3 invention 3, 3 fig. 3 3 3 is 3 a 3 cross 3- 3 sectional 3 view 3 taken 3 along 3 line 3 a 3- 3 a 3 in 3 fig. 31 3, 3 please 3 refer 3 to 3 fig. 31 3, 3 fig. 32 3 and 3 fig. 3 3 3, 3 the 3 antistatic 3 substrate 31 3 includes 3 an 3 insulating 3 base 3 10 3 and 3 a 3 sound 3 hole 3 11 3 penetrating 3 through 3 the 3 insulating 3 base 3 10 3. 3
When the antistatic substrate 1 is used as a substrate of a silicon microphone, an external sound signal is transmitted to an acoustic assembly inside the silicon microphone through the sound hole 11, and the acoustic assembly converts the sound signal into an electrical signal. In the present embodiment, the shape of the sound hole 11 is circular. In other embodiments of the present invention, the shape of the sound hole 11 may also be a polygon, which includes but is not limited to a triangle, a quadrangle, a pentagon, etc., and the polygon may be a regular polygon or a non-regular polygon.
And a conductive connecting layer 12 is arranged on the side wall of the sound hole 11. The material forming the conductive connection layer 12 may be a metal, or other material having high electrical conductivity. The conductive connection layer 12 may cover all or part of the side walls of the sound hole 11. In the present embodiment, the conductive connection layer 12 covers all the side walls of the sound hole 11.
The antistatic substrate 1 further comprises at least two conductive layers. The conductive layer is laterally arranged in the insulating base 10, wherein laterally arranged means that the conductive layer extends in a direction parallel to the insulating base 10. The material of the conductive layer may be a material with high conductivity, such as a metal, and further, the material of the conductive layer is copper. In the present embodiment, the antistatic substrate 1 includes two conductive layers, an upper conductive layer 13 and a lower conductive layer 14, and the upper conductive layer 13 and the lower conductive layer 14 extend in a direction parallel to the insulating base 10.
In the present embodiment, the insulating substrate 10 includes a body 101 provided between an upper conductive layer 13 and a lower conductive layer 14, an upper solder resist layer 102 covering the upper conductive layer 13, and a lower solder resist layer 103 covering the lower conductive layer 14. The upper conductive layer 13 and the lower conductive layer 14 are insulated and isolated by the body 101, the upper solder resist layer 102 covers the surface of the upper conductive layer 13, and the lower solder resist layer 103 covers the surface of the lower conductive layer 14.
Wherein, the upper conductive layer 13 may cover the upper surface of the body 101 wholly or partially. In this embodiment, the upper conductive layer 13 partially covers the upper surface of the body 101, fig. 4 is a schematic top view of the structure shown in fig. 1 with the upper solder mask layer 102 removed, please refer to fig. 2 and fig. 4, the edge area of the body 101 is not covered by the upper conductive layer 13, and the edge area of the body 101 is covered by the upper solder mask layer 102.
Wherein the lower conductive layer 14 may cover the body 101 entirely or partially. In this embodiment, the lower conductive layer 14 completely covers the lower surface of the body 101, fig. 5 is a schematic bottom view of the structure shown in fig. 2 with the lower solder mask layer 102 removed, and referring to fig. 5, the lower surface of the body 101 is completely covered by the upper conductive layer 13.
Further, in other embodiments of the present invention, the antistatic substrate 1 includes two or more conductive layers, and the conductive layers are disposed at intervals in the insulating base. Specifically, a plurality of conductive layers are arranged in parallel in the insulating base 10 and insulated and isolated by the body 101.
The conductive layers are electrically connected by the conductive connection layer 12. Specifically, in the present embodiment, the upper conductive layer 13 and the lower conductive layer 14 are both connected to the conductive connection layer 12, and the upper conductive layer 13 and the lower conductive layer 14 are electrically connected to each other. In other embodiments of the present invention, if the antistatic substrate includes two or more conductive layers, all the conductive layers can be connected to the conductive connection layer to realize the electrical connection between the conductive layers. The conductive layer and the conductive connecting layer 12 may be made of the same material or different materials.
On the upper surface of the insulating base 10, the area of the uppermost conductive layer around the sound hole is exposed to form an electrostatic conductive ring, and the other area is covered. Specifically, in the present embodiment, the area of the upper conductive layer 13 around the acoustic hole 11 is not covered by the upper solder resist layer 102, and the uncovered area forms the electrostatic conductive ring 130.
On the lower surface of the insulating base 10, a partial area of the lowermost conductive layer is exposed, forming an electrical contact area which can be grounded by conductive means. Specifically, in the present embodiment, a partial region of the lower conductive layer 14 on the lower surface of the insulating substrate 10 is not covered by the lower solder resist layer 103, and the region not covered by the lower solder resist layer 103 forms an electrical contact region 140, and the electrical contact region 140 can be grounded through a conductive device, such as the conductive layer 20 on the sidewall of the housing of the silicon microphone and the ground terminal 21 of the silicon microphone (see fig. 10).
Further, the electrical contact area 140 is located at the edge of the lower conductive layer 14, i.e. the lower solder mask layer 103 covers the central area of the lower conductive layer 14 and does not cover the edge area of the lower conductive layer 14. The electrical contact area 140 is in the shape of a closed loop to increase the conductive area of the electrical contact area 140. The closed ring shape means that the electrical contact region 140 is a closed pattern, which is not limited to a circular ring shape, and may be other patterns such as a square ring shape.
Further, in the present embodiment, at least one metal protection layer (not shown in the drawings) is disposed on the surfaces of the conductive connection layer 12, the electrostatic conductive ring 130, and the electrical contact region 140 for protecting the surfaces of the conductive connection layer 12, the electrostatic conductive ring 130, and the electrical contact region 140. The metal protection layer may be a conductive layer having different properties than the conductive connection layer 12, the electrostatic conductive ring 130, and the electrical contact region 140. Preferably, the uppermost metal protection layer is a gold layer.
Further, in this embodiment, the lower conductive layer 14 is also exposed around the sound hole 11 on the lower surface of the antistatic substrate 1, and in other embodiments of the present invention, this region may also be covered by the lower solder resist layer 103.
The utility model discloses antistatic substrate's advantage lies in, when produce static around the phonic hole 11, static is formed by upper conducting layer 13 static electricity conducting ring 130 is collected and warp electrically conductive articulamentum 12 conducts to lower floor's conducting layer 14, and at lower floor's conducting layer 14, static warp electricity contact zone 140 conducts to meeting the place to realize the purpose of static elimination.
In order to further accelerate the static conduction speed, the utility model discloses still provide the second embodiment of antistatic substrate. Fig. 6 is a schematic top view of a second embodiment of the antistatic substrate of the present invention, and fig. 7 is a cross-sectional view taken along line B-B in fig. 6. Referring to fig. 6 and 7, the second embodiment is different from the first embodiment in that the antistatic substrate 1 further includes at least one electrical connection channel 15, and the electrical connection channel 15 is longitudinally disposed in the insulating base 10. Electricity connecting channel 15 can be perpendicular insulating base 10 sets up, also can with insulating base 10 is an contained angle setting, in this embodiment, antistatic substrate 1 includes two electricity connecting channel 15, electricity connecting channel 15 is perpendicular insulating base 10 sets up. The electrical connection channel 15 is shielded by an upper solder mask layer 102, and the electrical connection channel 15 is illustrated with a dotted line in fig. 6.
The electrical connection channels 15 are used to electrically connect the conductive layers. Specifically, the electrical connection channels 15 are electrically connected to the upper conductive layer 13 and the lower conductive layer 14, respectively. The static electricity collected by the electrostatic conductive ring 130 is conducted to the lower conductive layer 14 through the conductive connection layer 12, and also conducted to the lower conductive layer 14 through the upper conductive layer 13 and the electrical connection channel 15, and then conducted to the ground through the electrical contact region 140.
Further, the electrical connection channel 15 is a metal through hole or a metal blind hole. The metal through hole is formed by forming a metal layer on the inner wall of a through hole penetrating through the conductive layer and the body 101, wherein the through hole and the metal layer are the electrical connection channel; the metal blind hole has a structure in which a metal layer is formed on an inner wall of a via hole penetrating through the body 101 without penetrating through the lowermost conductive layer or the uppermost conductive layer, and the via hole and the metal layer are the electrical connection channel. Specifically, in the present embodiment, referring to fig. 7, the electrical connection channel 15 is a metal via penetrating through the upper conductive layer 13 and the lower conductive layer 14. Further, in the second embodiment, the electrical connection channel 15 is arranged between the electrical contact area 140 and the sound hole 11.
In the second embodiment, the upper metal layer 13 and the lower metal layer 14 can be connected through the conductive connection layer 12 and also can be connected through the electrical connection channel 15, so that static electricity collected by the electrostatic conductive ring 130 can be quickly conducted to the ground, the conduction capability of the static electricity is improved, and the static electricity is prevented from affecting the performance of the device.
The utility model discloses the third embodiment of antistatic substrate is still provided. The third embodiment is different from the first embodiment in that an electrostatic dredging region is provided on the upper surface of the insulating base 10. Fig. 8 is a schematic top view of a third embodiment of the antistatic substrate of the present invention, referring to fig. 8, in this embodiment, a partial region of the upper conductive layer 13 is exposed on the upper surface of the insulating base 10 to form an electrostatic dredging region 131. The static electricity dredging region 131 may be a single region or may be composed of a plurality of regions. In this embodiment, the static electricity dredging region 131 is a single region. Further, the electrostatic dredging region 131 is disposed at a corner of the upper conductive layer 13. The shape of the static electricity diverting area 131 is circular or polygonal, and in this embodiment, the shape of the static electricity diverting area 131 is triangular.
Further, at least one metal protection layer 132 covers the electrostatic dredging region 131 to protect the upper conductive layer exposed at the identification region 131. The uppermost metal protection layer 132 is preferably a gold layer.
In a third embodiment, the function of providing the electrostatic dredging region at other parts of the antistatic substrate to expose the upper conductive layer is to: firstly, static electricity above the antistatic substrate can be collected not only by the static electricity conducting ring 130, but also by the static electricity dredging region 131, so that static charge is further conducted quickly, and damage to devices caused by static electricity is prevented; the identification function can be realized, automatic machine identification and personnel identification in large-scale production are facilitated, the fool-proof function is achieved, and abnormity in the production process is reduced.
The utility model also provides a fourth embodiment of antistatic substrate. The fourth embodiment differs from the first embodiment in that a logo area is provided on the lower surface of the insulating base 10. Fig. 9 is a schematic bottom view of a fourth embodiment of the antistatic substrate of the present invention, referring to fig. 9, a part of the lower conductive layer 14 is exposed to form a mark region 141 on the lower surface of the insulating substrate 10. The identification area 141 may be one area or may be composed of a plurality of areas. In the present embodiment, the identification area 141 is composed of a plurality of areas. Further, the identification area 141 is arranged between the electrical contact area 140 and the sound hole 11, for example, in the present embodiment, a plurality of the areas are arranged around the sound hole 11. At least one metal protection layer 142 is covered on the identification region 141 to protect the underlying conductive layer exposed at the identification region 141. The uppermost metal protection layer 142 is preferably a gold layer.
In the fourth embodiment, besides the sound hole 11, the identification region 141 is further disposed on the lower surface of the antistatic substrate, and the identification region 141 can realize automatic recognition of a machine, and particularly, accurate alignment can be performed on a structure in which a MEMS chip is directly attached to the sound hole.
The utility model also provides a silicon microphone. Figure 10 is a schematic diagram of the structure of a first embodiment of the silicon microphone. Referring to fig. 10, the silicon microphone includes an antistatic substrate 1, a housing 2 and an acoustic element. The antistatic substrate 1 has the same structure as the antistatic substrate described above.
The side wall of the shell 2 is provided with a conductive layer 20, the side surface or the bottom surface of the shell 2 is provided with a grounding terminal 21, and the conductive layer 20 is electrically connected with the grounding terminal 21. In the present embodiment, a conductive layer 20 is provided on the inner wall surface of the housing 2, and a ground terminal 21 is provided on the bottom surface of the housing 2.
The housing 2 and the antistatic substrate 1 form a cavity 4. The conductive layer 20 on the sidewall of the housing 2 is welded to the electrical contact area 140 of the antistatic substrate 1, so that the static electricity conducted by the antistatic substrate 1 is conducted to the ground terminal 21 through the conductive layer 20, thereby realizing rapid conduction of the static electricity to prevent the static electricity from affecting the performance of the silicon microphone.
The acoustic assembly is arranged in the cavity 4 and is used for converting sound signals transmitted into the cavity 4 through the sound hole 11 into electric signals. The acoustic assembly comprises a MEMS chip 3, in this embodiment, the MEMS chip 3 is disposed on the antistatic substrate 1, and the MEMS chip 3 faces the sound hole 11 to form a front chamber, and a sound signal conducted by the sound hole 11 is directly transmitted to the MEMS chip 3. In a second embodiment of the silicon microphone of the present invention, please refer to fig. 11, which is a schematic structural diagram of the second embodiment of the silicon microphone, wherein the MEMS chip 3 is disposed on the housing 2. In the second embodiment, the MEMS chip 3 is disposed on the surface of the housing 2 opposite to the antistatic substrate 1, and in other embodiments, the MEMS chip 3 may also be disposed on the surface of the housing 2 adjacent to the antistatic substrate 1, that is, the side surface of the housing 2.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, a plurality of improvements and decorations can be made without departing from the principle of the present invention, and these improvements and decorations should also be regarded as the protection scope of the present invention.
Claims (19)
1. The utility model provides an antistatic substrate, includes insulating base member and runs through insulating base member's phonate hole, its characterized in that, the base plate still includes:
the conductive connecting layer is arranged on the side wall of the sound hole;
at least two conductive layers transversely arranged in the insulating base body and electrically connected through the conductive connecting layer, wherein the area of the uppermost conductive layer around the sound hole is exposed on the upper surface of the insulating base body to form an electrostatic conductive ring, and part of the area of the lowermost conductive layer is exposed on the lower surface of the insulating base body to form an electric contact area which can be grounded through a conductive device;
static electricity generated around the acoustic hole can be conducted to the ground through the electrostatic conductive ring, the conductive connection layer, and the electrical contact region.
2. The antistatic substrate of claim 1 wherein the insulating base comprises a body disposed between the conductive layers, an upper solder mask covering the uppermost conductive layer, and a lower solder mask covering the lowermost conductive layer, the area of the uppermost conductive layer not covered by the upper solder mask forming the electrostatic conductive ring, and the area of the lowermost conductive layer not covered by the lower solder mask forming the electrical contact area.
3. The antistatic substrate of claim 1 wherein the electrical contact regions are located at the edges of the lowermost conductive layer.
4. The antistatic substrate of claim 3 wherein the electrical contact area is a closed loop.
5. The antistatic substrate of claim 1, wherein the shape of the sound holes is circular or polygonal.
6. The antistatic substrate of claim 1 further comprising at least one electrical connection channel disposed longitudinally in the insulating matrix, wherein the conductive layer is further electrically connected by the electrical connection channel, and wherein static electricity generated around the acoustic hole is further conducted to ground via the electrostatic conductive ring, the electrical connection channel, and the electrical contact region.
7. The antistatic substrate of claim 6 wherein the electrical connection channels are metal vias or metal blind vias.
8. The antistatic substrate of claim 6 wherein the electrical connection channel is disposed between the electrical contact zone and the acoustic aperture.
9. The antistatic substrate of claim 1 wherein a partial region of the uppermost conductive layer is exposed on the upper surface of the insulating base to form an electrostatic dredging region.
10. The antistatic substrate of claim 9 wherein the static electricity channeling areas are disposed at corners of the uppermost conductive layer.
11. The antistatic substrate of claim 9 wherein the static electricity channeling areas are circular or polygonal in shape.
12. The antistatic substrate of claim 1 wherein a partial area of the lowermost conductive layer is exposed to form a logo region on the lower surface of the insulating base.
13. The antistatic substrate of claim 12 wherein the logo region is disposed between the electrical contact region and the acoustic aperture.
14. The antistatic substrate according to any one of claims 1 to 13, wherein when a partial region of the lowermost conductive layer is exposed to form a mark region on the lower surface of the insulating base, at least one metal protective layer is formed on a surface of at least one of the conductive connection layer, the electrostatic conductive ring, the electrical contact region, the electrostatic conductive region and the mark region, and when no mark region is formed on the lower surface of the insulating base, at least one metal protective layer is formed on a surface of at least one of the conductive connection layer, the electrostatic conductive ring, the electrical contact region and the electrostatic conductive region.
15. The antistatic substrate of claim 14 wherein the uppermost metal protective layer is a gold layer.
16. A silicon microphone, comprising:
the conductive layer is arranged on the side wall of the shell, the shell is provided with a grounding end, and the conductive layer is electrically connected with the grounding end;
the antistatic substrate as claimed in any one of claims 1 to 15, wherein the housing and the antistatic substrate form a cavity, and the conductive layer on the sidewall of the housing is electrically connected to the electrical contact region of the antistatic substrate to ground the conductive layer on the lowermost layer of the antistatic substrate;
an acoustic assembly disposed within the cavity.
17. The silicon microphone of claim 16, wherein the acoustic assembly comprises a MEMS chip disposed on the anti-static substrate and corresponding to the acoustic aperture.
18. A silicon microphone as claimed in claim 16 wherein the acoustic assembly comprises a MEMS chip, the MEMS chip being disposed on the housing.
19. A silicon microphone as claimed in claim 18 wherein the MEMS die is disposed on a surface of the housing opposite the anti-static substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921432707.4U CN210579220U (en) | 2019-08-30 | 2019-08-30 | Antistatic substrate and silicon microphone using the same |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201921432707.4U CN210579220U (en) | 2019-08-30 | 2019-08-30 | Antistatic substrate and silicon microphone using the same |
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| CN210579220U true CN210579220U (en) | 2020-05-19 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110475192A (en) * | 2019-08-30 | 2019-11-19 | 苏州敏芯微电子技术股份有限公司 | Antistatic substrate and the silicon microphone for using the antistatic substrate |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110475192A (en) * | 2019-08-30 | 2019-11-19 | 苏州敏芯微电子技术股份有限公司 | Antistatic substrate and the silicon microphone for using the antistatic substrate |
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| GR01 | Patent grant | ||
| IP01 | Partial invalidation of patent right |
Commission number: 5W124848 Conclusion of examination: The patent right for invention No. 201921432707.4 is partially invalidated, and the patent right is maintained valid on the basis of claims 1-18 submitted by the patentee on September 17, 2021 Decision date of declaring invalidation: 20211230 Decision number of declaring invalidation: 53223 Denomination of utility model: Antistatic substrate and silicon microphone using the same Granted publication date: 20200519 Patentee: MEMSENSING MICROSYSTEMS (SUZHOU, CHINA) Co.,Ltd. |
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| IP01 | Partial invalidation of patent right |