CN210518236U - High-frequency polishing quartz wafer with long H-shaped structure - Google Patents
High-frequency polishing quartz wafer with long H-shaped structure Download PDFInfo
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- CN210518236U CN210518236U CN201921064434.2U CN201921064434U CN210518236U CN 210518236 U CN210518236 U CN 210518236U CN 201921064434 U CN201921064434 U CN 201921064434U CN 210518236 U CN210518236 U CN 210518236U
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- 239000010453 quartz Substances 0.000 title claims abstract description 33
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 33
- 238000005498 polishing Methods 0.000 title abstract description 6
- 235000012431 wafers Nutrition 0.000 claims abstract description 104
- 229910000831 Steel Inorganic materials 0.000 claims abstract description 5
- 239000010959 steel Substances 0.000 claims abstract description 5
- 239000013078 crystal Substances 0.000 abstract description 15
- 238000005452 bending Methods 0.000 abstract description 3
- 238000001259 photo etching Methods 0.000 abstract description 3
- 230000001629 suppression Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 7
- 238000004891 communication Methods 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 101100170553 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) DLD2 gene Proteins 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000000306 component Substances 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000003827 upregulation Effects 0.000 description 1
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Abstract
The utility model discloses a high-frequency polishing quartz wafer with a long H-shaped structure, which comprises a web wafer and a flange plate wafer, wherein the web wafer and the flange plate wafer are rectangular; the number of the flange plate wafers is 2, the number of the web plate wafers is 1, and the flange plate wafers are symmetrically arranged on two opposite long side edges of the web plate wafers to form the H-shaped steel quartz wafer; the length, width and height of the web wafer are respectively as follows: x1, Y1, Z1; the length, the width and the height of the flange plate wafer are respectively X2, Y2 and Z2; wherein: x2 ═ X1; y2 is more than or equal to 0.016 and Y1 is more than or equal to 0.032 and Y1; z2 is more than or equal to 1.41Z1 and less than or equal to 1.76Z 1. The novel structure piezoelectricity quartz crystal frequency piece of integral type is processed out through photoetching corruption's mode to this scheme, and it can know through the emulation result that the frame that adds width direction attaches the load and helps this direction bending vibration of better suppression and face shear vibration to guarantee that the range of its resonance is enough big, the amplitude of impedance reduces.
Description
Technical Field
The utility model belongs to the communication field relates to a high frequency polishing quartz wafer of long H type structure.
Background
With the development of 5G communication, the communication wavelength is shorter and shorter, and the communication frequency is correspondingly higher and higher; the core component of the AT-cut quartz crystal resonator or oscillator is a piezoelectric quartz crystal frequency piece, and the thickness and the resonant frequency of the piezoelectric quartz crystal frequency piece meet the following requirements: where t represents the thickness of the wafer and f represents the frequency of the wafer, it is clear from this equation that the thickness of the wafer becomes thinner and thinner as the resonant frequency of the wafer increases. Furthermore, quartz wafers for high frequencies are often implemented by changing the surface roughness of the wafer to reduce its resonance damping in order to reduce its impedance. The process mode adopts a polishing process to process.
As wafers become thinner and thinner, their surface roughness is low, resulting in wafer stacking during cleaning. Once two wafers are overlapped, the overlapped area cannot be cleaned up due to the fact that the surface of the two wafers is very smooth and a vacuum area appears, so that the crystal resonator DLD2 (level dependent characteristic) parameter is too large; if forced apart, this can lead to wafer breakage. Therefore, the shape of the wafer is required to be changed, so that the impedance of the vibration of the wafer can be met, and certain gaps are reserved after the wafer is attached again in the cleaning process and cannot be adhered together.
Disclosure of Invention
The utility model aims to provide a: a high-frequency polished quartz wafer of a long H-shaped structure is provided, solving the above-mentioned problems.
The utility model adopts the technical scheme as follows:
a high-frequency polishing quartz wafer with a long H-shaped structure comprises a web wafer and a flange plate wafer which are rectangular; the number of the flange plate wafers is 2, the number of the web plate wafers is 1, and the flange plate wafers are symmetrically arranged on two opposite long side edges of the web plate wafers to form the H-shaped steel quartz wafer; the length, width and height of the web wafer are respectively as follows: x1, Y1, Z1; the length, the width and the height of the flange plate wafer are respectively X2, Y2 and Z2;
wherein: x2 ═ X1;
0.016Y1≤Y2≤0.032Y1；
1.41Z1≤Z2≤1.76Z1。
in order to solve the deficiency of traditional problem, this scheme processes out the novel structure piezoelectricity quartz crystal frequency piece of integral type through the mode of photoetching corruption, compares traditional flat quartz wafer, because the edge increases certain quality, probably leads to the additional load to increase and influences the vibration impedance increase of crystal. However, as can be seen from the simulation results, the addition of the frame load in the width direction helps to suppress the bending vibration and the surface shear vibration in the width direction better, so as to ensure that the resonance amplitude is large enough and the impedance amplitude is reduced.
Further, as a preferable embodiment; the length, width and height of the web wafer are respectively 1.35mm, 0.93mm and 0.017 mm.
Further, as a preferable embodiment; the length, width and height of the flange plate wafer are 1.35mm, 0.015mm and 0.024mm respectively.
Further, as a preferable embodiment; the length, width and height of the flange plate wafer are respectively 1.35mm, 0.019mm and 0.026 mm.
Further, as a preferable embodiment; the length, width and height of the flange plate wafer are respectively 1.35mm, 0.030mm and 0.030 mm.
To sum up, owing to adopted above-mentioned technical scheme, the beneficial effects of the utility model are that:
1. the utility model discloses in break traditional thinking, establish the quartz wafer of H shaped steel shape.
2. The utility model discloses in although slightly changed the master vibration frequency of wafer, realized leaving certain clearance behind the wafer direct contact, prevented that the wafer from appearing wasing phenomena such as unclean or the unable part of wafer after wasing because of the lamination.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention, and therefore should not be considered as limiting the scope, and that for those skilled in the art, other relevant drawings can be obtained according to the drawings without inventive effort, wherein:
fig. 1 is a schematic structural diagram of the present invention;
fig. 2 is a schematic illustration of the web wafer annotation of the present invention;
FIG. 3 is a schematic illustration of the flange plate wafer annotation of the present invention;
fig. 4 is an impedance analysis chart of the web wafer when X1 is 1.35mm, Y1 is 0.93mm, and Z1 is 0.017 mm;
fig. 5 shows a web wafer of the present invention, X1 ═ 1.35mm, Y1 ═ 0.93mm, and Z1 ═ 0.017 mm; when the edge plate wafer X2 is 1.35mm, Y2 is 0.015mm, and Z2 is 0.024mm, the impedance analysis chart of the quartz wafer is shown;
fig. 6 shows a web wafer of the present invention, X1 ═ 1.35mm, Y1 ═ 0.93mm, and Z1 ═ 0.017 mm; and when the edge plate wafer X2 is 1.35mm, the Y2 is 0.030mm, and the Z2 is 0.030mm, the impedance analysis chart of the quartz wafer is shown.
The labels in the figure are: 1-web wafer 2-edge plate wafer.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the invention, i.e., the described embodiments are only some, but not all embodiments of the invention. The components of embodiments of the present invention, as generally described and illustrated in the figures herein, may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present invention, presented in the accompanying drawings, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. Based on the embodiment of the present invention, all other embodiments obtained by the person skilled in the art without creative work belong to the protection scope of the present invention.
It is noted that relational terms such as "first" and "second," and the like, may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
A high-frequency polished quartz wafer of a long H-shaped structure, characterized in that: comprises a web wafer 1 and a flange plate wafer 2 which are rectangular; the number of the flange plate wafers 2 is 2, the number of the web plate wafers 1 is 1, and the flange plate wafers 2 are symmetrically arranged on two opposite long side edges of the web plate wafers 1 to form H-shaped steel quartz wafers; the length, width and height of the web wafer 1 are respectively as follows: x1, Y1, Z1; the length, width and height of the flange plate wafer 2 are respectively X2, Y2 and Z2;
wherein: x2 ═ X1;
0.016Y1≤Y2≤0.032Y1；
1.41Z1≤Z2≤1.76Z1。
when in work: the novel structure piezoelectricity quartz crystal frequency piece of integral type is processed out to this scheme through the mode of photoetching corruption, compares traditional flat quartz crystal piece, because the edge increases certain quality, probably leads to the additional load to increase the vibration impedance who influences the crystal and increases. However, as can be seen from the simulation results, the addition of the frame load in the width direction helps to suppress the bending vibration and the surface shear vibration in the width direction better, so as to ensure that the resonance amplitude is large enough and the impedance amplitude is reduced. The size of the web wafer 1 is not unique and is suitable for a wafer of the next dimension of the specification SMD 7050.
The features and properties of the present invention will be described in further detail with reference to the following examples.
Example one
The utility model discloses a high frequency polishing quartz wafer of long H type structure that preferred embodiment provided, the utility model discloses in establish web wafer 1 as original wafer, when web wafer 1 length width height be 1.35mm, 0.93mm and 0.017mm respectively, ANSYS finite element software that adopts calculates original wafer through harmonic response analysis under the excitation of alternating electric field, the amplitude-frequency characteristic and the impedance characteristic of crystal vibration; the impedance value was found to be 40 Ω.
Example two
In this embodiment, based on the first embodiment, the length of the flange plate wafer 2 is 1.35mm, and the width and height are variables; the length, width and height of the web wafer 1 are respectively 1.35mm, 0.93mm and 0.017 mm; calculating the amplitude-frequency characteristic and the impedance characteristic of the crystal vibration of the long H-shaped quartz wafer under the excitation of the alternating electric field through harmonic response analysis; the impedance values are obtained as in table 1.
TABLE 1
As can be seen from table 1, the dimensions of the long H-shaped quartz wafer are as described above, and it can be found that as the size of the flange plate Y2 increases, which means that the length/width ratio of the overall structural dimension of the long H-shaped quartz wafer decreases, the crystal vibration is suppressed, and therefore the impedance thereof increases, as compared with the impedance value of the original wafer; on the contrary, as the size of the flange plate Z2 is increased, the end load of the long H-shaped quartz crystal wafer is increased, the interference of parasitic vibration in the broadside direction is inhibited, the capability of improving the crystal vibration is promoted, and the corresponding impedance value is reduced. According to the calculation, the impedance of the original wafer is 40 ohms, in order to solve the lamination problem, the vibration impedance of the original wafer is changed by changing the structure, the impedance has no fixed required value, the maximum up-regulation of the existing impedance value is generally carried out according to the performance requirement of the device, and the lower limit value is better.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not intended to limit the scope of the present invention, and any modifications, equivalents and improvements made by those skilled in the art within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (5)
1. A high-frequency polished quartz wafer of a long H-shaped structure, characterized in that: comprises a web wafer (1) and a flange plate wafer (2) which are rectangular; the number of the flange plate wafers (2) is 2, the number of the web plate wafers (1) is 1, and the flange plate wafers (2) are symmetrically arranged on two opposite long side edges of the web plate wafers (1) to form an H-shaped steel quartz wafer;
the length, the width and the height of the web wafer (1) are respectively as follows: x1, Y1, Z1; the length, the width and the height of the flange plate wafer (2) are respectively X2, Y2 and Z2;
wherein: x2 ═ X1;
0.016Y1≤Y2≤0.032Y1；
1.41Z1≤Z2≤1.76Z1。
2. the high-frequency polished quartz wafer of a long H-shaped structure as set forth in claim 1, wherein: the length, the width and the height of the web wafer (1) are respectively 1.35mm, 0.93mm and 0.017 mm.
3. The high-frequency polished quartz wafer of a long H-shaped structure as set forth in claim 2, wherein: the length, the width and the height of the flange plate wafer (2) are respectively 1.35mm, 0.015mm and 0.024 mm.
4. The high-frequency polished quartz wafer of a long H-shaped structure as set forth in claim 2, wherein: the length, the width and the height of the flange plate wafer (2) are respectively 1.35mm, 0.019mm and 0.026 mm.
5. The high-frequency polished quartz wafer of a long H-shaped structure as set forth in claim 2, wherein: the length, the width and the height of the flange plate wafer (2) are respectively 1.35mm, 0.030mm and 0.030 mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921064434.2U CN210518236U (en) | 2019-07-09 | 2019-07-09 | High-frequency polishing quartz wafer with long H-shaped structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921064434.2U CN210518236U (en) | 2019-07-09 | 2019-07-09 | High-frequency polishing quartz wafer with long H-shaped structure |
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| CN210518236U true CN210518236U (en) | 2020-05-12 |
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| CN201921064434.2U Withdrawn - After Issue CN210518236U (en) | 2019-07-09 | 2019-07-09 | High-frequency polishing quartz wafer with long H-shaped structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110224683A (en) * | 2019-07-09 | 2019-09-10 | 成都泰美克晶体技术有限公司 | A kind of high frequency polishing quartz wafer of long H-type structure |
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2019
- 2019-07-09 CN CN201921064434.2U patent/CN210518236U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110224683A (en) * | 2019-07-09 | 2019-09-10 | 成都泰美克晶体技术有限公司 | A kind of high frequency polishing quartz wafer of long H-type structure |
| CN110224683B (en) * | 2019-07-09 | 2024-02-02 | 成都泰美克晶体技术有限公司 | High-frequency polished quartz wafer with long H-shaped structure |
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Granted publication date: 20200512 Effective date of abandoning: 20240202 |
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| AV01 | Patent right actively abandoned |
Granted publication date: 20200512 Effective date of abandoning: 20240202 |