CN109361372A - Temperature compensation type low-loss ultra-wideband resonator and filter - Google Patents
Temperature compensation type low-loss ultra-wideband resonator and filter Download PDFInfo
- Publication number
- CN109361372A CN109361372A CN201811189479.2A CN201811189479A CN109361372A CN 109361372 A CN109361372 A CN 109361372A CN 201811189479 A CN201811189479 A CN 201811189479A CN 109361372 A CN109361372 A CN 109361372A
- Authority
- CN
- China
- Prior art keywords
- resonator
- type low
- wide band
- temperature compensating
- loss
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 31
- 239000002184 metal Substances 0.000 claims abstract description 31
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 15
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 9
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims abstract description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 238000010897 surface acoustic wave method Methods 0.000 abstract 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 4
- 229910052744 lithium Inorganic materials 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 229910003327 LiNbO3 Inorganic materials 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000024241 parasitism Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02614—Treatment of substrates, e.g. curved, spherical, cylindrical substrates ensuring closed round-about circuits for the acoustical waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02637—Details concerning reflective or coupling arrays
- H03H9/02685—Grating lines having particular arrangements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02834—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/058—Holders; Supports for surface acoustic wave devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
Abstract
The invention discloses a temperature compensation type low-loss ultra-wideband resonator, which comprises a 15-degree lithium niobate substrate, wherein a metal finger strip is arranged on the substrate in a comb shape, a silicon dioxide temperature compensation layer is arranged on the substrate and the metal finger strip, the value range of the ratio of the width d of the metal finger strip to the half resonance period p of the ultra-wideband surface acoustic wave resonator is 0.28-0.38, and the value range of the ratio of the thickness h of the metal finger strip to the one resonance period 2p of the ultra-wideband surface acoustic wave resonator is 0.08-0.11. The invention discloses a temperature compensation type low-loss ultra-wideband resonator.A silicon dioxide temperature compensation layer is arranged on a substrate and a metal finger strip, so that the frequency temperature coefficient of the silicon dioxide temperature compensation layer is less than minus 30 ppm/DEG C, and the temperature stability of a resonator and a filter is realized. In addition, the invention also discloses a temperature compensation type low-loss ultra-wideband filter.
Description
Technical field
The present invention relates to wave filter technology field more particularly to a kind of temperature compensating type low-loss ultra wide band resonator and filters
Wave device.
Background technique
The relative bandwidth of traditional Filter of Low Loss Acoustic Surface Wave is limited between 0.1-5%, and in order to meet 5-20%'s
The performance requirement of relative bandwidth must then use LC filter (passive filter) or MEMS(Micro-Electro-
Mechanical System, MEMS) filter, and the volume of LC filter or MEMS filter is all much larger than biography
System Filter of Low Loss Acoustic Surface Wave.
In the prior art, a kind of low-loss ultra-wide band filter uses the copper facing finger on 15 ° of lithium niobates (LiNbO3)
The SAW filter that relative bandwidth is greater than 12% may be implemented in method.Since 15 ° of niobic acid lithium materials are to very temperature sensitive,
Therefore the filter frequencies of production can generate drift with temperature change, frequency-temperature coefficient up to arrives -116ppm/ DEG C, this
It will affect the actual use of filter.As the frequency range being defined in military and civilian's communication field is more and more, growing number of frequency band
Between gap can be more and more narrow, the requirement to the temperature stability of filter is also higher and higher.
Therefore, the temperature stability for how improving existing low-loss ultra-wide band filter becomes those skilled in the art
Urgent problem.
Summary of the invention
In view of the above shortcomings of the prior art, the invention discloses a kind of temperature compensating type low-loss ultra wide band resonance
Device, on substrate and metal finger be arranged layer of silicon dioxide temperature compensating layer, can make its frequency-temperature coefficient be less than-
30ppm/ DEG C, to be the temperature stability of resonator and filter.
In order to solve the above technical problems, present invention employs the following technical solutions:
A kind of temperature compensating type low-loss ultra wide band resonator, including 15 ° of lithium niobate substrates, the substrate upper comb shape are provided with gold
Belong to finger, be provided with layer of silicon dioxide temperature compensating layer on the substrate and metal finger, the width d of the metal finger with
The value range of the ratio of half of harmonic period p of the ultra wide band SAW resonator is 0.28-0.38, and the metal
The value range of the ratio of one harmonic period 2p of the thickness h of finger and the ultra wide band SAW resonator is 0.08-
0.11。
Preferably, the metal finger is copper finger.
Preferably, 4 to 5 times with a thickness of metal finger of the silica temperature compensating layer.
A kind of temperature compensating type low-loss ultra-wide band filter uses above-mentioned temperature compensating type low-loss ultra wide band resonance
Device is as the resonator in the temperature compensating type low-loss ultra-wide band filter.
Preferably, the temperature compensating type low-loss ultra-wide band filter includes that 3 temperature compensating type low-losses are super
Broadband resonator, respectively resonator RP1, resonator RS1 and resonator RS2, wherein the resonator RS1 and the resonance
Device RS2 connects to form series arm, and the resonator RP1 is in parallel with the series arm.
In conclusion the invention discloses a kind of temperature compensating type low-loss ultra wide band resonator, including 15 ° of lithium niobate bases
Piece, the substrate upper comb shape are provided with metal finger, and layer of silicon dioxide temperature benefit is provided on the substrate and metal finger
Repay layer, the value of the width d of the metal finger and the ratio of half of harmonic period p of the ultra wide band SAW resonator
Range is 0.28-0.38, and a harmonic period of the thickness h of the metal finger and the ultra wide band SAW resonator
The value range of the ratio of 2p is 0.08-0.11.The invention discloses a kind of temperature compensating type low-loss ultra wide band resonator,
Layer of silicon dioxide temperature compensating layer is set on substrate and metal finger, its frequency-temperature coefficient can be made to be less than -30ppm/ DEG C,
To be the temperature stability of resonator and filter.In addition, the invention also discloses a kind of temperature compensating type low-loss ultra-wide
Band filter.
Detailed description of the invention
In order to keep the purposes, technical schemes and advantages of invention clearer, the present invention is made into one below in conjunction with attached drawing
The detailed description of step, in which:
Fig. 1 is a kind of structural schematic diagram of temperature compensating type low-loss ultra wide band resonator disclosed by the invention；
Fig. 2 is a kind of structural schematic diagram of temperature compensating type low-loss ultra-wide band filter disclosed by the invention；
Fig. 3 is a kind of measured result figure of ultra wide band SAW resonator disclosed by the invention；
Fig. 4 is a kind of measured result figure of ultra wide band SAW filter disclosed by the invention.
Description of symbols: substrate 1, metal finger 2, temperature compensating layer 3.
Specific embodiment
The present invention is described in further detail with reference to the accompanying drawing.
As shown in Figure 1, the invention discloses a kind of temperature compensating type low-loss ultra wide band resonator, including 15 ° of lithium niobates
Substrate, the substrate upper comb shape are provided with metal finger, are provided with layer of silicon dioxide temperature on the substrate and metal finger
Compensation layer, the width d of the metal finger take with the ratio of half of harmonic period p of the ultra wide band SAW resonator
Value range is 0.28-0.38, and resonance week of the thickness h of the metal finger and the ultra wide band SAW resonator
The value range of the ratio of phase 2p is 0.08-0.11.
As shown in figure 3, being a kind of measured result figure of temperature compensating type low-loss ultra wide band resonator disclosed by the invention.
Wherein abscissa indicates the frequency of resonator, and ordinate indicates the admittance of resonator.D/p be 0.28, h/2p be 0.08 when, resonance
Device curve such as schemes dB (Y (5,6))；D/p be 0.38, h/2p be 0.11 when, resonator curve such as schemes dB (Y (1,2))；D/p is
0.33, h/2p be 0.95 when, resonator curve such as schemes dB (Y (3,4)).Further, since there is silica temperature compensating layer, because
This, can make its frequency-temperature coefficient be less than -30ppm/ DEG C, to be the temperature stability of resonator and filter.
When it is implemented, the metal finger is copper finger.
When it is implemented, 4 to 5 times with a thickness of metal finger of the silica temperature compensating layer.
In order to guarantee the effect of temperature compensating layer, the thickness with a thickness of metal finger of the silica compensation layer in the present invention
4 to 5 times of degree.
As shown in Fig. 2, a kind of temperature compensating type low-loss ultra-wide band filter, uses above-mentioned temperature compensating type low-loss
Ultra wide band resonator is as the resonator in the temperature compensating type low-loss ultra-wide band filter.
When it is implemented, the temperature compensating type low-loss ultra-wide band filter includes the low damage of 3 temperature compensating types
Consume ultra wide band resonator, respectively resonator RP1, resonator RS1 and resonator RS2, wherein the resonator RS1 and described
Resonator RS2 connects to form series arm, and the resonator RP1 is in parallel with the series arm.
As shown in figure 4, be the measured result figure of temperature compensating type low-loss ultra-wide band filter disclosed by the invention, this filter
Wave device uses the resonator that d/p is 0.95 for 0.33, h/2p to design, and filter curve such as schemes dB (S (1,2)), abscissa table
Show the frequency of filter, ordinate indicates the loss of filter.
The present invention is by the optimization to resonator duty ratio and plated film relative thickness, using in 15 ° of niobic acid lithium material copper facing
Process realize effective inhibition of lateral mould and R wave parasitism, be limited in passband ripple within the scope of 0.5dB, it can be achieved that
Relative bandwidth 20% can the miniaturization of engineer application, ultra wide band SAW filter.It is arranged one on substrate and metal finger
Layer silica temperature compensating layer, can make its frequency-temperature coefficient be less than -30ppm/ DEG C, to be resonator and filter
Temperature stability.
Finally, it is stated that the above examples are only used to illustrate the technical scheme of the present invention and are not limiting, although passing through ginseng
According to the preferred embodiment of the present invention, invention has been described, it should be appreciated by those of ordinary skill in the art that can
To make various changes to it in the form and details, without departing from the present invention defined by the appended claims
Spirit and scope.
Claims (5)
1. a kind of temperature compensating type low-loss ultra wide band resonator, including 15 ° of lithium niobate substrates, the substrate upper comb shape are provided with
Metal finger, which is characterized in that layer of silicon dioxide temperature compensating layer, the metal are provided on the substrate and metal finger
The value range of the ratio of half of harmonic period p of the width d of finger and the ultra wide band SAW resonator is 0.28-
0.38, and the ratio of a harmonic period 2p of the thickness h of the metal finger and the ultra wide band SAW resonator
Value range is 0.08-0.11.
2. temperature compensating type low-loss ultra wide band resonator as described in claim 1, which is characterized in that the metal finger is
Copper finger.
3. temperature compensating type low-loss ultra wide band resonator as described in claim 1, which is characterized in that the silica temperature
Spend 4 to 5 times with a thickness of metal finger of compensation layer.
4. a kind of temperature compensating type low-loss ultra-wide band filter, which is characterized in that using such as any one of claims 1 to 3 institute
The temperature compensating type low-loss ultra wide band resonator stated is as the resonance in the temperature compensating type low-loss ultra-wide band filter
Device.
5. temperature compensating type low-loss ultra-wide band filter as claimed in claim 4, which is characterized in that the temperature compensating type
Low-loss ultra-wide band filter includes 3 temperature compensating type low-loss ultra wide band resonators, respectively resonator RP1, humorous
Shake device RS1 and resonator RS2, wherein the resonator RS1 and the resonator RS2 connect to form series arm, the resonance
Device RP1 is in parallel with the series arm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811189479.2A CN109361372A (en) | 2018-10-12 | 2018-10-12 | Temperature compensation type low-loss ultra-wideband resonator and filter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811189479.2A CN109361372A (en) | 2018-10-12 | 2018-10-12 | Temperature compensation type low-loss ultra-wideband resonator and filter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109361372A true CN109361372A (en) | 2019-02-19 |
Family
ID=65348920
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811189479.2A Pending CN109361372A (en) | 2018-10-12 | 2018-10-12 | Temperature compensation type low-loss ultra-wideband resonator and filter |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109361372A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110708035A (en) * | 2019-10-21 | 2020-01-17 | 中国电子科技集团公司第二十六研究所 | Surface wave suppression method for temperature compensation layer upper surface of temperature compensation type surface acoustic wave device |
| CN111641399A (en) * | 2020-06-01 | 2020-09-08 | 中国电子科技集团公司第二十六研究所 | Is provided with SiO2RF filter of passivation layer |
| CN112865743A (en) * | 2021-01-07 | 2021-05-28 | 中国电子科技集团公司第二十六研究所 | Film structure of low-temperature drift film bulk acoustic wave filter and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107317560A (en) * | 2017-05-11 | 2017-11-03 | 华南理工大学 | A kind of temperature-compensating surface acoustic wave device and preparation method thereof |
| CN107819449A (en) * | 2017-12-04 | 2018-03-20 | 中电科技集团重庆声光电有限公司 | Ultra-wideband surface acoustic wave resonator and filter |
| CN207339804U (en) * | 2017-11-14 | 2018-05-08 | 安徽云塔电子科技有限公司 | A kind of piezo-electric resonator |
| CN108461626A (en) * | 2018-04-28 | 2018-08-28 | 中国电子科技集团公司第二十六研究所 | Temperature compensation layer planarization method of temperature compensation type surface acoustic wave device |
| CN108539006A (en) * | 2018-04-17 | 2018-09-14 | 杭州左蓝微电子技术有限公司 | A kind of temperature-compensating SAW filter and preparation method thereof |
-
2018
- 2018-10-12 CN CN201811189479.2A patent/CN109361372A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107317560A (en) * | 2017-05-11 | 2017-11-03 | 华南理工大学 | A kind of temperature-compensating surface acoustic wave device and preparation method thereof |
| CN207339804U (en) * | 2017-11-14 | 2018-05-08 | 安徽云塔电子科技有限公司 | A kind of piezo-electric resonator |
| CN107819449A (en) * | 2017-12-04 | 2018-03-20 | 中电科技集团重庆声光电有限公司 | Ultra-wideband surface acoustic wave resonator and filter |
| CN108539006A (en) * | 2018-04-17 | 2018-09-14 | 杭州左蓝微电子技术有限公司 | A kind of temperature-compensating SAW filter and preparation method thereof |
| CN108461626A (en) * | 2018-04-28 | 2018-08-28 | 中国电子科技集团公司第二十六研究所 | Temperature compensation layer planarization method of temperature compensation type surface acoustic wave device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110708035A (en) * | 2019-10-21 | 2020-01-17 | 中国电子科技集团公司第二十六研究所 | Surface wave suppression method for temperature compensation layer upper surface of temperature compensation type surface acoustic wave device |
| CN110708035B (en) * | 2019-10-21 | 2022-04-01 | 中国电子科技集团公司第二十六研究所 | Surface wave suppression method for temperature compensation layer upper surface of temperature compensation type surface acoustic wave device |
| CN111641399A (en) * | 2020-06-01 | 2020-09-08 | 中国电子科技集团公司第二十六研究所 | Is provided with SiO2RF filter of passivation layer |
| CN112865743A (en) * | 2021-01-07 | 2021-05-28 | 中国电子科技集团公司第二十六研究所 | Film structure of low-temperature drift film bulk acoustic wave filter and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109361372A (en) | Temperature compensation type low-loss ultra-wideband resonator and filter | |
| WO2017132184A1 (en) | Guided surface acoustic wave device providing spurious mode rejection | |
| JP4259576B2 (en) | Duplexer and surface acoustic wave filter | |
| Fujii et al. | Low propagation loss in a one-port SAW resonator fabricated on single-crystal diamond for super-high-frequency applications | |
| CN112088490A (en) | SAW device with composite substrate for ultra high frequencies | |
| CN104868873A (en) | Multilayer composite structure surface acoustics wave device base | |
| DE102018109833A1 (en) | SAW resonator, RF filter, multiplexer and method of making a SAW resonator | |
| JP2021503229A (en) | Piezoelectric resonator and manufacturing method of piezoelectric resonator | |
| Kadota et al. | Ultra-wideband ladder filters using zero-th shear mode plate wave in ultrathin LiNbO3 plate with apodized interdigital transducers | |
| WO2024012311A1 (en) | Method for forming surface acoustic wave resonance device | |
| WO2019082901A1 (en) | Composite substrate and acoustic wave device using same | |
| JP2001196896A (en) | Surface acoustic wave device | |
| CN110383685A (en) | Acoustic wave device, high-frequency front-end circuit and communication device | |
| Zhou et al. | Ultrawide-band SAW devices using SH0 mode wave with increased velocity for 5G front-ends | |
| CN105245199B (en) | High q-factor one-port saw resonator applied to radio temperature sensor | |
| Su et al. | Lithium Niobate Thin Film Based A 1 Mode Resonators with Frequency up to 16 Ghz and Electromechanical Coupling Factor Near 35% | |
| Bousquet et al. | Potentialities of LiTaO3 for Bulk Acoustic Wave Filters | |
| WO2020140654A1 (en) | Apparatus and method for adjusting performance of acoustic resonator on the basis of beam and eave dimension | |
| Wu et al. | Large Coupling and Spurious-Free SH $ _ {\text {0}} $ Plate Acoustic Wave Resonators Using LiNbO $ _ {\text {3}} $ Thin Film | |
| Hassanien et al. | A near zero tcf acoustic resonator with high electromechanical coupling of 13.5% at 3.5 ghz | |
| CN107819449B (en) | Ultra-wideband surface acoustic wave resonator and filter | |
| KR101082201B1 (en) | Surface acoustic wave device | |
| Zheng et al. | Near 5-GHz Longitudinal Leaky Surface Acoustic Wave Devices on LiNbO $ _ {3} $/SiC Substrates | |
| CN112398456A (en) | High-performance surface acoustic wave device and preparation method thereof | |
| CN208063158U (en) | A kind of temperature-compensating SAW resonator based on solid reflecting layer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20220524 Address after: No.23 Xiyong Avenue, Shapingba District, Chongqing 401332 Applicant after: CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION CHONGQING ACOUSTIC-OPTIC-ELECTRONIC CO.,LTD. Address before: 400060 Chongqing Nanping Nan'an District No. 14 Huayuan Road Applicant before: CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION NO.26 Research Institute |
|
| TA01 | Transfer of patent application right | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190219 |
|
| RJ01 | Rejection of invention patent application after publication |