CN210273999U - High-frequency polishing quartz wafer with bump structure - Google Patents
High-frequency polishing quartz wafer with bump structure Download PDFInfo
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- CN210273999U CN210273999U CN201921064477.0U CN201921064477U CN210273999U CN 210273999 U CN210273999 U CN 210273999U CN 201921064477 U CN201921064477 U CN 201921064477U CN 210273999 U CN210273999 U CN 210273999U
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- 239000010453 quartz Substances 0.000 title claims abstract description 33
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 33
- 238000005498 polishing Methods 0.000 title abstract description 7
- 239000013078 crystal Substances 0.000 claims description 12
- 238000003475 lamination Methods 0.000 abstract description 6
- 230000019771 cognition Effects 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000001259 photo etching Methods 0.000 abstract description 3
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- 238000004458 analytical method Methods 0.000 description 8
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- 238000004891 communication Methods 0.000 description 4
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- 230000004044 response Effects 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
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- 230000002401 inhibitory effect Effects 0.000 description 2
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- 230000002829 reductive effect Effects 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
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- 101100170553 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) DLD2 gene Proteins 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000306 component Substances 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
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- 230000000670 limiting effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
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Abstract
The utility model discloses a high-frequency polishing quartz wafer with a bump structure, which comprises a rectangular wafer with the length, width and height of X, Y, Z, wherein the upper surface and the lower surface of the rectangular wafer are provided with bumps in prism shapes in a mirror image manner, and the bumps are positioned at the diagonal positions of the surfaces; the ridge length of the bump is A, and the height of the bump is B; wherein; b is more than or equal to 0.06Z and less than or equal to 0.24Z; a is more than or equal to 0.01Y and less than or equal to 0.03Y. In order to solve the defects of the traditional problem, the scheme designs the quartz wafer with the convex structure; breaks through the traditional idea of wafer manufacturing and cognition; the problems in the background art are solved; the rectangular chip is an original chip, and the size of the chip is not unique, so that the chip mainly suitable for the chip is suitable for the size specification from the large-size SMD7050 specification to the small-size SMD1210 specification. The scheme is that corresponding small columns are carved on the surface of the wafer in a photoetching mode to prevent lamination.
Description
Technical Field
The utility model belongs to the communication field relates to a high frequency polishing quartz wafer of lug structure.
Background
With the development of 5G communication, the communication wavelength is shorter and shorter, and the communication frequency is correspondingly higher and higher; the core component of the AT-cut quartz crystal resonator or oscillator is a piezoelectric quartz crystal frequency piece, and the thickness and the resonant frequency of the piezoelectric quartz crystal frequency piece meet the following requirements: where t represents the thickness of the wafer and f represents the frequency of the wafer, 1664/f, which is clear from the equation that the thickness of the wafer becomes thinner as the resonant frequency of the wafer increases. Furthermore, quartz wafers for high frequencies are often implemented by changing the surface roughness of the wafer to reduce its resonance damping in order to reduce its impedance. The process mode adopts a polishing process to process.
As wafers become thinner and thinner, their surface roughness is low, resulting in wafer stacking during cleaning. Once two wafers are overlapped, the overlapped area cannot be cleaned up due to the fact that the surface of the two wafers is very smooth and a vacuum area appears, so that the crystal resonator DLD2 (level dependent characteristic) parameter is too large; if forced apart, this can lead to wafer breakage. Therefore, the shape of the wafer is required to be changed, so that the impedance of the vibration of the wafer can be met, and certain gaps are reserved after the wafer is attached again in the cleaning process and cannot be adhered together.
Disclosure of Invention
The utility model aims to provide a: provides a high-frequency polished quartz wafer with a bump structure, solves the problem
The utility model adopts the technical scheme as follows:
a high-frequency polishing quartz wafer with a bump structure comprises a rectangular wafer with the length, width and height of X, Y, Z, wherein the upper surface and the lower surface of the rectangular wafer are provided with bumps with prism shapes in a mirror image mode, and the bumps are positioned at the diagonal corners of the surfaces; the ridge length of the bump is A, and the height of the bump is B;
wherein; b is more than or equal to 0.06Z and less than or equal to 0.24Z;
0.03Y≤A≤0.06Y。
in order to solve the defects of the traditional problem, the scheme designs the prism quartz wafer with the convex structure; breaks through the traditional idea of wafer manufacturing and cognition; the problems in the background art are solved; the rectangular chip is an original chip, and the size of the chip is not unique, so that the chip mainly suitable for the chip is suitable for the size specification from the large-size SMD7050 specification to the small-size SMD1210 specification. The scheme is that corresponding small columns are carved on the surface of the wafer in a photoetching mode to prevent lamination.
Further, as a preferred scheme, N bumps are included between any two bumps with a shorter diagonal distance on the same surface, where N is a natural number greater than 1. Arranging a new bump between any two bumps with shorter diagonal distance positions so as to emphasize that the number of the bumps is more than or equal to 2, and the bumps are arranged on the wide sides of the rectangular wafer, wherein 2 faces comprise 4 wide sides, and the number and the distance of the bumps arranged on each wide side are the same; therefore, the positions of the bumps need to be designed at the edge of the rectangular wafer, and due to the energy trap effect of the wafer, the main vibration is concentrated in the electrode area, and the energy in the non-electrode area is rapidly attenuated, so that the reflection of the edge vibration back to the main vibration area is inhibited, and the impedance is too high.
Further, as a preferable scheme, the N is 1, and the bump is a regular hexagonal prism.
Further, preferably, the length, width and height of the rectangular wafer are respectively as follows: 1.35mm, 0.93mm and 0.017 mm.
Further, as a preferred scheme, the ridge length a and the height B of the bump are respectively as follows: 0.003mm and 0.01 mm.
Further, as a preferred scheme, the ridge length a and the height B of the bump are respectively as follows: 0.006mm, 0.03mm,
to sum up, owing to adopted above-mentioned technical scheme, the beneficial effects of the utility model are that:
1. the utility model discloses in through the structure of change wafer, though slightly changed the master vibration frequency of wafer, realized leaving certain clearance behind the wafer direct contact, prevented that the wafer from appearing the phenomenon such as the unable part of washing back wafer because of the lamination washs unclean or wash.
2. The utility model breaks the traditional thinking and breaks the structure of the wafer; and the target main frequency of the wafer can be realized by adjusting the thickness of the wafer at the central part for the later stage of the main vibration frequency.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention, and therefore should not be considered as limiting the scope, and that for those skilled in the art, other relevant drawings can be obtained according to the drawings without inventive effort, wherein:
FIG. 1 is a schematic structural view of a prism quartz wafer according to the present invention;
FIG. 2 is a schematic illustration of the prism quartz wafer annotation of the present invention;
fig. 3 is an impedance analysis chart of the rectangular wafer when X is 1.35mm, Y is 0.93mm, and Z is 0.017mm in the rectangular wafer of the present invention;
fig. 4 is an impedance analysis diagram of the prism quartz wafer of the present invention when X is 1.35mm, Y is 0.93mm, Z is 0.017mm, a is 0.03, B is 0.01, and the number of bumps is 8;
fig. 5 is an impedance analysis diagram of the prism quartz wafer of the present invention when X is 1.35mm, Y is 0.93mm, Z is 0.017mm, a is 0.06, B is 0.03, and the number of bumps is 8;
fig. 6 is an impedance analysis diagram of the prism quartz wafer of the present invention when X is 1.35mm, Y is 0.93mm, Z is 0.017mm, a is 0.03, B is 0.01, and the number of bumps is 12;
fig. 7 is an impedance analysis chart of the prism quartz wafer of the present invention when X is 1.35mm, Y is 0.93mm, Z is 0.017mm, a is 0.06, B is 0.01, and the number of bumps is 12.
The labels in the figure are: 1. rectangular wafer, 2-bumps.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the invention, i.e., the described embodiments are only some, but not all embodiments of the invention. The components of embodiments of the present invention, as generally described and illustrated in the figures herein, may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present invention, presented in the accompanying drawings, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. Based on the embodiment of the present invention, all other embodiments obtained by the person skilled in the art without creative work belong to the protection scope of the present invention.
It is noted that relational terms such as "first" and "second," and the like, may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
A high-frequency polishing quartz wafer with a bump structure comprises a rectangular wafer 1 with the length, width and height of X, Y, Z, wherein bumps 2 in the shape of prisms are arranged on the upper surface and the lower surface of the rectangular wafer 1 in a mirror image mode, and the bumps 2 are positioned at the opposite corners of the surfaces; the length of the convex block 2 is A, and the height of the convex block is B;
wherein; b is more than or equal to 0.06Z and less than or equal to 0.24Z;
0.03Y≤A≤0.06Y。
when in use: the scheme breaks through the traditional idea of wafer manufacturing and cognition; the problems in the background art are solved; the rectangular chip 1 is an original chip and has a non-unique size, and the size specification mainly suitable for the chip is suitable for the specification from the large-size SMD7050 specification to the small-size SMD1210 specification. The scheme is that corresponding small columns are carved on the surface of the wafer in a photoetching mode to prevent lamination. The small column is a bump 2.
The features and properties of the present invention will be described in further detail with reference to the following examples.
Example one
The utility model discloses a high frequency polishing quartz wafer of lug structure that preferred embodiment provided, the original wafer of rectangular wafer, when 1 height of length and width of rectangular wafer is 1.35mm, 0.93mm and 0.017mm respectively, ANSYS finite element software that adopts calculates original wafer under the excitation of alternating electric field through harmonic response analysis, the amplitude-frequency characteristic and the impedance characteristic of crystal vibration; the impedance value was found to be 40 Ω.
Example two
In this embodiment, on the basis of the first embodiment, when the number of the bumps 2 is 8. The bump edge length A and the bump edge height B are both variable and have the unit of mm, and the amplitude-frequency characteristic and the impedance characteristic of the crystal vibration of the prism quartz wafer under the excitation of an alternating electric field are calculated through ANSYS finite element software and harmonic response analysis; to obtain Table 1
TABLE 1
As can be derived from table 1, the bump 2 sizes are as shown above, and the resistance values when 8 bumps 2 are provided on the rectangular wafer 1 are as shown above, compared with the resistance values of the original wafer; it can be found that as the size of the bump height B increases, meaning that the length/width ratio of the overall structural size of the prism quartz wafer decreases, the end loading increases, inhibiting crystal vibration and therefore its impedance increases; on the contrary, as the size of the bump edge length A is increased, the end load of the bump edge length A is increased, the interference of parasitic vibration in the broadside direction is inhibited, the capability of improving the crystal vibration is facilitated, and the corresponding impedance value is reduced. According to the calculation, the impedance of the original wafer is 40 ohms, in order to solve the lamination problem, the vibration impedance of the original wafer is changed by changing the structure, the impedance has no fixed required value, the maximum up-regulation of the existing impedance value is generally carried out according to the performance requirement of the device, and the lower limit value is better.
EXAMPLE III
In this embodiment, on the basis of the first embodiment, when the number of the bumps 2 is 12. The bump edge length A and the bump edge height B are both variable and have the unit of mm, and the amplitude-frequency characteristic and the impedance characteristic of the crystal vibration of the prism quartz wafer under the excitation of an alternating electric field are calculated through ANSYS finite element software and harmonic response analysis; to obtain Table 2
TABLE 2
From table 2, it can be derived: the sizes of the bumps 2 are as shown above, and the resistance values when 12 bumps 2 are provided on the rectangular wafer 1 are as shown above, compared with the resistance values of the original wafer; it can be found that as the size of the bump height B increases, the length/width ratio, which means the size of the overall structure of the prism quartz wafer, decreases and the end load increases, inhibiting crystal vibration and therefore its impedance increases; on the contrary, as the size of the bump edge length A is increased, the end load of the prism quartz wafer is increased, the interference of parasitic vibration in the broadside direction is inhibited, the capability of improving the crystal vibration is facilitated, and the corresponding impedance value is reduced. According to the calculation, the impedance of the original wafer is 40 ohms, in order to solve the lamination problem, the vibration impedance of the original wafer is changed by changing the structure, the impedance has no fixed required value, the maximum up-regulation of the existing impedance value is generally carried out according to the performance requirement of the device, and the lower limit value is better.
In summary, it can be known from the simulation results that the corresponding small pillars can be etched on the surface of the wafer by photolithography, and the impedance is not too large by only satisfying the structure and the size in the present solution.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not intended to limit the scope of the present invention, and any modifications, equivalents and improvements made by those skilled in the art within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (6)
1. A high-frequency polished quartz wafer of bump structure, characterized in that: the quartz crystal wafer comprises a rectangular wafer (1) with the length, width and height of X, Y, Z, wherein prismatic bumps (2) are arranged on the upper/lower surfaces of the rectangular wafer (1) in a mirror image mode to form a prismatic quartz wafer, and the bumps (2) are positioned at the opposite corners of the surface where the prismatic bumps are arranged; the ridge length of the bump (2) is A, and the height of the bump is B;
wherein; b is more than or equal to 0.06Z and less than or equal to 0.24Z;
0.03Y≤A≤0.06Y。
2. the high-frequency polished quartz wafer of a bump structure according to claim 1, wherein: on the same surface, N bumps (2) are arranged between any two bumps (2) with shorter diagonal distance positions, wherein N is a natural number larger than 1.
3. The high-frequency polished quartz wafer of a bump structure according to claim 2, wherein: n is 1, and the bump (2) is a regular hexagonal prism.
4. The high-frequency polished quartz wafer of a bump structure according to claim 1, wherein: the length, width and height of the rectangular wafer are respectively as follows: 1.35mm, 0.93mm and 0.017 mm.
5. The high-frequency polished quartz wafer of a bump structure according to claim 4, wherein: the ridge length A and the ridge height B of the lug are respectively as follows: 0.003mm and 0.01 mm.
6. The high-frequency polished quartz wafer of a bump structure according to claim 4, wherein: the ridge length A and the ridge height B of the lug are respectively as follows: 0.006mm and 0.03 mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921064477.0U CN210273999U (en) | 2019-07-09 | 2019-07-09 | High-frequency polishing quartz wafer with bump structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201921064477.0U CN210273999U (en) | 2019-07-09 | 2019-07-09 | High-frequency polishing quartz wafer with bump structure |
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| CN210273999U true CN210273999U (en) | 2020-04-07 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110224684A (en) * | 2019-07-09 | 2019-09-10 | 成都泰美克晶体技术有限公司 | A kind of high frequency polishing quartz wafer of projection cube structure |
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2019
- 2019-07-09 CN CN201921064477.0U patent/CN210273999U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110224684A (en) * | 2019-07-09 | 2019-09-10 | 成都泰美克晶体技术有限公司 | A kind of high frequency polishing quartz wafer of projection cube structure |
| CN110224684B (en) * | 2019-07-09 | 2024-01-30 | 成都泰美克晶体技术有限公司 | High-frequency polished quartz wafer with bump structure |
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