CN210465733U - Near-infrared broadband perfect absorber based on dumbbell-shaped grating - Google Patents
Near-infrared broadband perfect absorber based on dumbbell-shaped grating Download PDFInfo
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- CN210465733U CN210465733U CN201921456130.0U CN201921456130U CN210465733U CN 210465733 U CN210465733 U CN 210465733U CN 201921456130 U CN201921456130 U CN 201921456130U CN 210465733 U CN210465733 U CN 210465733U
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- 239000006096 absorbing agent Substances 0.000 title claims abstract description 45
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 32
- 238000010521 absorption reaction Methods 0.000 claims abstract description 23
- 239000010931 gold Substances 0.000 claims abstract description 20
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052737 gold Inorganic materials 0.000 claims abstract description 19
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 16
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 13
- 239000010703 silicon Substances 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 10
- 230000001965 increasing effect Effects 0.000 claims description 10
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 6
- 230000005672 electromagnetic field Effects 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
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- 238000000034 method Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 22
- 239000010408 film Substances 0.000 description 13
- 210000002381 plasma Anatomy 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 101100136092 Drosophila melanogaster peng gene Proteins 0.000 description 2
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- -1 graphite alkene Chemical class 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
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Abstract
The utility model discloses a perfect absorber of near-infrared broadband based on dumbbell type grating, its characterized in that: the grating is of a five-layer structure and comprises a silicon substrate, a gold film, a silicon dioxide buffer layer, a graphene layer and a dumbbell-shaped grating, wherein the silicon substrate, the gold film, the silicon dioxide buffer layer, the graphene layer and the dumbbell-shaped grating are sequentially arranged from bottom to top; its advantages are simple process, wide absorption band and high absorption rate.
Description
Technical Field
The utility model relates to an absorber especially relates to a perfect absorber of near-infrared broadband based on dumbbell type grating.
Background
Landy et al developed the first Perfect Absorber (PMA) of highly efficient electromagnetic material in 2008 by reducing reflections and maximizing absorption by matching free space impedance. The electromagnetic absorber can strongly absorb electromagnetic waves, and can strongly absorb the incident electromagnetic waves in a specific frequency band by designing a proper structure and selecting a proper material. The electromagnetic absorber has a very wide application prospect in the aspects of electromagnetic stealth, thermal radiation, thin-film solar cells, sensors, detection and the like, and becomes a hotspot of research. With the continuous and deep research on electromagnetic absorbers, great progress is made in visible light, infrared and terahertz wave bands.
The electromagnetic absorber is divided according to the absorption frequency band and comprises a microwave absorber, a terahertz absorber, an infrared absorber and a visible light absorber. In an infrared band, Cui et al (Cui Y X, Xu J, Jin Y, et al. A. in film broadband based on multi-sized nanoantennas. applied Physics Letters, 2011, 99(25):253101. (charpy, Xu army, Jin Yi, etc.. thin film broadband absorbers based on multi-sized nano antennas. application Physics rapid report, 2011, 99(25): 253101.) adopt nano strip arrays of different sizes to construct an infrared broadband absorber, which obtains an absorptivity as high as 80% in a band of 8.5-11 μm. Xue et al (Xue W R, Chen X, Peng Y L, et al, Grating-type mid-isolated light based on silicon carbide bipolar optical Express, 2016, 24(20): 22596-. Peng et al (Peng H, Luo Y, Ying X X, et al, Broadband and dhighly absorbing multilayer structure in mid-not required. applied Optics, 2016, 55(31):8833-8838. (Peng, Lu Yi, am et al. Infrared broadband absorber in multilayer film construction, application Optics, 2016, 55(31):8833-8838.)) used metal Ti and two-layer dielectric Si3N4The composition absorber is realized in a 2.2-6.2 mu m wave band based on the impedance matching principleAbsorption of more than 85% is obtained. Yue et al (Yue W S, Wang Z H, Yang Y, et al. high performance infrared plasma absorbers and their use in thin-film sensing. plasmas, 2016(10):1557-2O3The metallic Au stack constitutes a nanostructured absorber, which achieves perfect absorption in a narrow frequency band. Xiao et al (Xiao D, Tao K Y, Wang Q. ultrabranched mid-unsaturated light based on a multi-cavity plasma metamaterial array. plasma, 2016, 11(2): 389-. These infrared absorbers have problems of complicated fabrication and low absorption rate. In order to realize the perfect broadband absorption of the incident near-infrared electromagnetic wave, the structure of the infrared absorber needs to be designed and the characteristics of the infrared absorber need to be studied deeply.
Disclosure of Invention
The utility model aims to solve the technical problem that a near-infrared broadband perfect absorber based on dumbbell type grating is provided, its simple manufacture, and absorption bandwidth broad, the absorption rate is higher.
The utility model provides a technical scheme that above-mentioned technical problem adopted does: the near-infrared broadband perfect absorber based on the dumbbell-shaped grating is characterized in that: the grating is of a five-layer structure and comprises a silicon substrate, a gold film, a silicon dioxide buffer layer, a graphene layer and a dumbbell-shaped grating, wherein the silicon substrate, the gold film, the silicon dioxide buffer layer, the graphene layer and the dumbbell-shaped grating are sequentially arranged from bottom to top, the gold film is used for increasing the absorption rate of incident electromagnetic waves, the silicon dioxide buffer layer is used for increasing the absorption rate of the incident electromagnetic waves, the graphene layer is used for increasing the overall mechanical strength and enhancing the interaction of an electromagnetic field so as to increase the absorption rate of the incident electromagnetic waves, the dumbbell-shaped grating is.
The thickness of the silicon substrate is 0.8-1.2 mm. Such as 1 mm.
The thickness of the gold film is 80-120 nanometers. Such as 100 nanometers.
The gold film is processed on the upper surface of the silicon substrate through a magnetron sputtering micro-nano processing technology.
The thickness of the silicon dioxide buffer layer is 170-220 nanometers. Such as 200 nm.
The dumbbell-shaped grating is formed by parallel arrangement of a plurality of dumbbell-shaped structures, namely a plurality of dumbbell-shaped indium phosphide structures.
The function expression of the middle part of the dumbbell-shaped structure is a standard quadratic curve ax2+ c, wherein a and c are constants, and the value range of a is 0.15-0.3 micron-1The value range of c is 0.06-0.09 micrometers, and X represents an independent variable in the X direction.
The period of the dumbbell-shaped grating is 0.89-0.93 microns, the thickness of the dumbbell-shaped structure is 0.01-0.3 microns, and the width of two end parts of the dumbbell-shaped structure is 0.5-0.6 microns.
The dumbbell-shaped grating is made of indium phosphide (InP) with the refractive index of 3.16 near 1.6 microns.
Compared with the prior art, the utility model has the advantages of:
1) the near-infrared broadband perfect absorber is of a layer structure, the arrangement of layers can be realized by adopting the conventional technology, and the manufacture is very simple.
2) The gold film, the silicon dioxide buffer layer and the graphene layer in the near-infrared broadband perfect absorber can increase the absorption rate of incident electromagnetic waves, so that the absorption rate is greatly improved; the dumbbell-shaped grating in the near-infrared broadband perfect absorber can generate a broadband resonance absorption effect, the bandwidth is greatly increased, the thickness of a gold film is 100 nanometers, the thickness of a silicon dioxide buffer layer is 200 nanometers, the period of the dumbbell-shaped grating is 0.9 micrometer, the thickness of a dumbbell-shaped structure is 0.3 micrometer, and two end parts of the dumbbell-shaped structureThe width of the partition was 0.6 μm, and the functional expression of the middle portion of the dumbbell structure was 0.2 ×2Under the condition of +0.07, the near-infrared broadband perfect absorber has the absorption rate almost reaching 100% in the near-infrared 1.61-1.92 micron wave band, is in a perfect absorption state, and has the bandwidth reaching 300 nanometers.
3) The near-infrared broadband perfect absorber has high application value in the fields of multi-band stealth, electromagnetic communication and medicine.
Drawings
FIG. 1 is a front view of the near infrared broadband perfect absorber of the present invention;
FIG. 2 is a top view of the near infrared broadband perfect absorber of the present invention;
FIG. 3 shows a graph in which the thickness of the gold film is 100 nm, the thickness of the silica buffer layer is 200 nm, the period of the dumbbell-shaped grating is 0.9 μm, the thickness of the dumbbell-shaped structure is 0.3 μm, the width of the two end portions of the dumbbell-shaped structure is 0.6 μm, and the functional expression of the middle portion of the dumbbell-shaped structure is 0.2 ×2+0.07, the utility model discloses a schematic diagram of the absorption spectrum of the perfect absorber of near-infrared broadband.
Detailed Description
The present invention will be described in further detail with reference to the following embodiments.
The utility model provides a perfect absorber of near-infrared broadband based on dumbbell type grating, as shown in fig. 1 and fig. 2, it is five layer structure, including hugging closely the silicon substrate 1 that sets up in proper order from bottom to top, a gold membrane 2 for increasing incident electromagnetic wave's absorptivity, a silica buffer layer 3 for increasing incident electromagnetic wave's absorptivity, a graphite alkene layer 4 for increasing holistic mechanical strength and reinforcing electromagnetic field interact in order to increase incident electromagnetic wave's absorptivity, a dumbbell type grating 5 for reducing incident electromagnetic wave's reflection and can produce broadband resonance absorbing action, 5 levels of dumbbell type grating set up on graphite alkene layer 4's upper surface.
In the present embodiment, the thickness of the silicon substrate 1 may be 0.8 to 1.2 mm, for example, 1 mm; the thickness of the gold film 2 can be 80-120 nm, such as 100 nm; the thickness of the silicon dioxide buffer layer 3 can be 170-220 nm, such as 200 nm; graphene layer 4 is a single layer having a thickness of 0.34 nm.
In this embodiment, the material for making the dumbbell-shaped grating 5 is indium phosphide (InP) with a refractive index of 3.16 at about 1.6 μm; the dumbbell-shaped grating 5 is formed by a plurality of dumbbell-shaped structures 51 which are arranged in parallel, namely a plurality of dumbbell-shaped indium phosphide structures which are arranged in parallel; the functional expression of the middle portion 511 of the dumbbell-shaped structure 51 is a standard quadratic curve ax2+ c, wherein a and c are constants, and the value range of a is 0.15-0.3 micron-1E.g. a value of 0.2 μm-1The value range of c is 0.06-0.09 micrometers, if the value is 0.07 micrometers, X represents an independent variable in the X direction; the period of the dumbbell-shaped grating 5 can be 0.89-0.93 micrometers, such as 0.9 micrometers, the thickness of the dumbbell-shaped structure 51 can be 0.01-0.3 micrometers, such as 0.3 micrometers, and the width of the two end portions 512 of the dumbbell-shaped structure 51 can be 0.5-0.6 micrometers, such as 0.6 micrometers.
In the present embodiment, the gold film 2 is processed on the upper surface of the silicon substrate 1 by a magnetron sputtering micro-nano processing technique.
Utilize the utility model discloses a perfect absorber of near-infrared broadband tests.
In the case of normal incidence of TM electromagnetic wave polarization, i.e., light waves incident perpendicularly in the opposite direction along the X-axis, the absorption and bandwidth of the incident electromagnetic wave were studied. The thickness of the gold film 2 is 100 nm, the thickness of the silicon dioxide buffer layer 3 is 200 nm, the period of the dumbbell-shaped grating 5 is 0.9 micron, the thickness of the dumbbell-shaped structure 51 is 0.3 micron, the width of the two end parts 512 of the dumbbell-shaped structure 51 is 0.6 micron, and the functional expression of the middle part 511 of the dumbbell-shaped structure 51 is 0.2x2+0.07 (i.e. a is 0.2 μm in value)-1And c is 0.07 μm), the obtained absorption spectrum is shown in fig. 3. As can be seen from FIG. 3, the near-infrared broadband perfect absorber has an absorption rate almost reaching 100% in a near-infrared 1.61-1.92 micron wave band, is in a perfect absorption state, and has a bandwidth reaching 300 nanometers.
Claims (9)
1. The near-infrared broadband perfect absorber based on the dumbbell-shaped grating is characterized in that: the grating is of a five-layer structure and comprises a silicon substrate, a gold film, a silicon dioxide buffer layer, a graphene layer and a dumbbell-shaped grating, wherein the silicon substrate, the gold film, the silicon dioxide buffer layer, the graphene layer and the dumbbell-shaped grating are sequentially arranged from bottom to top, the gold film is used for increasing the absorption rate of incident electromagnetic waves, the silicon dioxide buffer layer is used for increasing the absorption rate of the incident electromagnetic waves, the graphene layer is used for increasing the overall mechanical strength and enhancing the interaction of an electromagnetic field so as to increase the absorption rate of the incident electromagnetic waves, the dumbbell-shaped grating is.
2. The near infrared broadband perfect absorber based on the dumbbell-shaped grating as claimed in claim 1, characterized in that: the thickness of the silicon substrate is 0.8-1.2 mm.
3. The near infrared broadband perfect absorber based on the dumbbell-shaped grating as claimed in claim 2, characterized in that: the thickness of the gold film is 80-120 nanometers.
4. The near infrared broadband perfect absorber based on the dumbbell-shaped grating as claimed in claim 1, characterized in that: the gold film is processed on the upper surface of the silicon substrate through a magnetron sputtering micro-nano processing technology.
5. The near infrared broadband perfect absorber based on the dumbbell-shaped grating of claim 3, characterized in that: the thickness of the silicon dioxide buffer layer is 170-220 nanometers.
6. The near infrared broadband perfect absorber based on the dumbbell-shaped grating of claim 5, characterized in that: the dumbbell-shaped grating is formed by a plurality of dumbbell-shaped structures which are arranged in parallel.
7. The near infrared broadband perfect absorber based on the dumbbell-shaped grating of claim 6, characterized in that: the function expression of the middle part of the dumbbell-shaped structure is standardIs a quadratic curve ax2+ c, wherein a and c are constants, and the value range of a is 0.15-0.3 micron-1The value range of c is 0.06-0.09 micrometers, and X represents an independent variable in the X direction.
8. The near infrared broadband perfect absorber based on the dumbbell-shaped grating of claim 7, characterized in that: the period of the dumbbell-shaped grating is 0.89-0.93 microns, the thickness of the dumbbell-shaped structure is 0.01-0.3 microns, and the width of two end parts of the dumbbell-shaped structure is 0.5-0.6 microns.
9. The near infrared broadband perfect absorber based on the dumbbell-shaped grating of claim 6, characterized in that: the dumbbell-shaped grating is made of indium phosphide, and the refractive index of the indium phosphide near 1.6 microns is 3.16.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112684524A (en) * | 2020-11-05 | 2021-04-20 | 新乡医学院 | Double-channel narrow-band absorber based on TE polarized light oblique incidence mode |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112684524A (en) * | 2020-11-05 | 2021-04-20 | 新乡医学院 | Double-channel narrow-band absorber based on TE polarized light oblique incidence mode |
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