CN112684524A - Double-channel narrow-band absorber based on TE polarized light oblique incidence mode - Google Patents
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Abstract
The invention aims to provide a dual-channel narrow-band absorber based on a TE polarized light oblique incidence mode, which provides higher sensitivity and quality factors of comprehensive reaction sensitivity, and comprises an infrared graphene-based narrow-band absorption unit, wherein the infrared graphene-based narrow-band absorption unit comprises a dielectric layer from top to bottom, a buffer dielectric layer, a graphene film, a high-refractive-index nano-cavity super-surface and a metal substrate, the upper end surface of the high-refractive-index nano-cavity super-surface is provided with a hole downwards, the hole is filled with the dielectric layer same as the dielectric layer, and the structure is beneficial to designing a high-sensitivity refractive-index sensor because the reflection spectrum width of the structure is 0.5nm and the absorption rate of a resonance position is as high as 97%, wherein the top dielectric layer is used as a first channel, the nano deep-hole array of the high-refractive-index nano-cavity super-surface is used as a second channel, and the, the quality factor of the comprehensive reaction sensitivity is as high as 1000/RIU, which is superior to the prior art.
Description
Technical Field
The invention belongs to the technical field of surface plasmons, and particularly relates to a dual-channel narrow-band absorber based on a TE polarized light oblique incidence mode.
Background
The surface plasmon is a special electromagnetic wave which appears on the medium and the metal surface under specific conditions when light irradiates on the metal surface, and the special electromagnetic wave propagates along the interface of the metal and the medium in the horizontal direction and is attenuated in an exponential mode in the direction vertical to the metal surface. Unlike general electromagnetic waves, surface plasmons have high locality, and can generate many new phenomena and new applications. Such as transmission enhancement characteristics of light impinging on a metal film having a periodic array of holes patterned with a sub-wavelength. The surface plasmon can break through the diffraction limit, which is beneficial to the further development of the traditional optical device (such as a refractive index sensor), provides possibility for the development and integration of a more precise optical device, and is one of the important reasons for which the surface plasmon is concerned. Due to the characteristics, the surface plasmon has great application prospects in the aspects of discovery and testing of biosensors, nanoscale photonic devices, data acquisition and storage devices and novel nano materials.
For a refractive index sensor, the sensitivity of the refractive index sensor depends on the narrow bandwidth of an absorption spectrum to a great extent, a narrower bandwidth means higher sensitivity, the conventional plasmon structure mostly adopts a normal incidence mode of TM polarized light, and the quality factors of the sensitivity and the comprehensive reaction sensitivity are not high.
Disclosure of Invention
The invention aims to provide a dual-channel narrow-band absorber based on a TE polarized light oblique incidence mode, which can be used for a refractive index sensor and provides higher sensitivity and a quality factor of comprehensive reaction sensitivity.
The technical scheme for solving the technical problems of the invention is as follows: the utility model provides a dual-channel narrowband absorber based on oblique incident mode of TE polarized light, includes infrared graphite alkene base narrowband absorption unit, infrared graphite alkene base narrowband absorption unit includes that from the top down is located the dielectric layer of first layer, is located the buffering dielectric layer of second layer, is located the graphene film of third layer, is located the high refractive index nanometer chamber super surface of fourth layer, is located the metal substrate of fifth layer, the upper end face that the high refractive index nanometer chamber surpassed the surface sets up porosely downwards, fill in the hole with the dielectric layer the same dielectric.
The infrared graphene-based narrow-band absorption unit is a cubic unit, and the length and width of the infrared graphene-based narrow-band absorption unit are 770 nm.
The buffer dielectric layer is made of PMMA, and the thickness of the buffer dielectric layer is 180 nm.
The thickness of the graphene film is 0.34 nm.
The super surface material in high refracting index nanometer chamber is silicon, the super surface thickness in high refracting index nanometer chamber is 1.7um, the terminal surface diameter in hole is 100nm, the height of deep hole is 1.5 um.
The metal substrate is made of gold.
The number of layers of the graphene film is 1-25.
The infrared graphene-based narrow-band absorption units are periodically distributed along the transverse direction and the longitudinal direction.
The invention has the beneficial effects that: the infrared graphene-based narrow-band absorption unit is arranged on the basis of the oblique incidence mode of TE polarized light and comprises a dielectric layer, a buffer dielectric layer, a graphene film, a high-refractive-index nano-cavity super-surface and a metal substrate, wherein the dielectric layer is arranged on a first layer from top to bottom, the buffer dielectric layer is arranged on a second layer, the graphene film is arranged on a third layer, the high-refractive-index nano-cavity super-surface is arranged on a fourth layer, and the metal substrate is arranged on a fifth layer. The narrow absorption linewidth characteristic of the structure can be explained by coupling among modes, namely coupling of a gap mode of a nano deep hole, a conduction mode of a dielectric layer seed and a surface plasmon oscillation mode of a metal and high dielectric medium interface (a high-refractive-index nano cavity super surface). The narrow-band absorber structure is beneficial to designing a biosensor for detecting the tiny refractive index change of an analyte, and can be applied to activity change of neural stem cells, neural cells and other stem cells in a nanometer scale in the development process.
Drawings
Fig. 1 is a schematic diagram of the structure of the infrared graphene-based narrow-band absorption unit of the present invention.
Fig. 2 is a schematic diagram of a dual-channel narrowband absorber structure formed by a plurality of infrared graphene-based narrowband absorption units of the present invention periodically distributed in the transverse direction and the longitudinal direction.
FIG. 3 is a graph of the emission spectrum, angle of incidence, refractive index, and resonant wavelength of the reflection spectrum of the present invention.
FIG. 4 is a graph of the incidence angle versus absorption spectrum of the present invention.
FIG. 5 is a graph showing the influence of the number of nano-deep holes on the reflection spectrum.
FIG. 6 is a graph of the reflection spectrum versus refractive index of the present invention.
FIG. 7 is a graph of absorption peak versus refractive index at a resonance location in accordance with the present invention.
FIG. 8 is a graph of the resonance wavelength and the width of the reflection spectrum versus refractive index for the present invention.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without any inventive step, are within the scope of the present invention.
As shown in fig. 1 and 2, the infrared graphene-based narrow-band absorption unit comprises a dielectric layer located on a first layer from top to bottom, a buffer dielectric layer located on a second layer, a graphene film located on a third layer, a high-refractive-index nano-cavity super-surface located on a fourth layer, and a metal substrate located on a fifth layer, wherein a hole is formed in the upper end surface of the high-refractive-index nano-cavity super-surface downwards, and the hole is filled with a dielectric medium the same as that of the dielectric layer.
The infrared graphene-based narrow-band absorption unit is a cubic unit, and the length p and the width of the infrared graphene-based narrow-band absorption unit are 770 nm.
The buffer dielectric layer is made of PMMA, and the thickness h of the buffer dielectric layer ALT is 180 nm.
The graphene film tGIs 0.34 nm.
The super surface material in high refracting index nanometer chamber is silicon Si, the super surface thickness T in high refracting index nanometer chamber is 1.7um, the terminal surface diameter delta in hole is 100nm, the height tau of deep hole is 1.5 um.
The metal substrate is made of gold.
The number of layers of the graphene film is 1-25.
The infrared graphene-based narrow-band absorption units are periodically distributed along the transverse direction and the longitudinal direction.
In this embodiment, the light source is disposed on the upper right side of the top dielectric layer, the electric field direction of the TE polarized incident light is along the y-axis direction, the incident angle is θ, the vector of the incident electric field is E, and the vector of the incident wave is k. The dielectric layer at the top of the infrared graphene-based narrow-band absorption units after being periodically distributed along the transverse direction and the longitudinal direction is used as a first channel, and the hole array of the super surface of the high-refractive-index nano cavity is used as a second channel.
First, the absorption performance was investigated, and as shown in fig. 3, when the full width at half maximum of the emission spectrum was 0.5nm, the incident angle θ was 80 °, the incident light was TE-polarized incident light, and the electric field vector direction was along the y-axis direction, the resonance wavelength of the reflection spectrum was changed from λ to 1.35 when the refractive index of the analyte (i.e., the dielectric layer) was 1.33 to 1.3521.470um offset to λ1For understanding the physical mechanism of this resonance, we calculated the electric and magnetic field distributions at the resonance location for the structure under study, where electric and magnetic field strengths are defined as 1.460um
And
i.e. the incident field components are normalized by the scattered field, we also calculate the distribution of energy loss, which defines the | Qe|＝Qrh+QmlIn which the resistance is lost
Loss of reluctance
The results show that the electric field intensity is enhanced in nano deep holes (namely holes) and high dielectric regions (namely the super surface of a high-refractive-index nano cavity); for magnetic fieldIn other words, the magnetic field enhancement is mainly in the high dielectric region (high index nanocavity metasurface); losses occur primarily at the interface of the high dielectric layer (high refractive index nanocavity super-surface) and the metal substrate. Due to the fact that electric field enhancement exists at the nano deep hole, the structure can be used for a refractive index sensor to conduct sensing measurement of the refractive index in a nano scale. The refractive index of silicon tested was 3.48, the refractive index of PMMA 1.45, and the thickness of graphene 0.34 nm.
The narrow-band absorber is obtained by adopting an oblique incidence mode, and the incidence angle is an important parameter. In this example, we further study the tuning effect of oblique incidence angle on absorption spectrum. As shown in fig. 4, the reflection spectrum is significantly split, broadened and narrowed as the oblique incidence angle increases from 50 ° to 85 °. Specifically, at an incident angle of 50 degrees, the reflection spectrum has an absorption peak at 1.45um, and the spectrum width is 1 nm; when the incident angle is increased from 50 degrees to 54 degrees, the absorption spectrum has an absorption peak; when the incident angle is increased from 54 degrees to 56 degrees, the absorption peak is split, and two absorption peaks appear; when the incident angle is increased from 56 degrees to 60 degrees, two absorption peaks exist, but it is pointed out that the distance between the two absorption peaks is gradually reduced; when the incident angle is increased from 60 degrees to 62.5 degrees, the distance between the two absorption peaks is increased; when the incident angle is increased from 62.5 degrees to 75 degrees, the reflection spectrum shows three absorption peaks; as the angle of incidence increases from 75 degrees to 85 degrees, the reflectance spectrum again reverts to two absorption peaks. It is noted that at an incident angle of 80 degrees, the bandwidth of the absorption spectrum is 0.5nm, as indicated by the black dashed line in fig. 4. The absorption spectrum width of the graphene narrow-band absorber structure researched by the project is much narrower than that of the result in the prior art.
For a single-layer graphene film, the energy absorption capacity is very weak, the tuning characteristics of the whole graphene device are researched by researching the number of layers of the graphene film, when the number of layers of the graphene film is increased from 1 layer to 25 layers, the resonance wavelength shows red shift, and meanwhile, the absorption peak is weakened, for example, the absorption peak of a GDMM structure of the single-layer graphene film is 97%, and the bandwidth is 0.3 nm; absorption peak 60% for the 25-layer graphene film GDMM structure. Therefore, the absorption peak performance of the GDMM structure is tuned by changing the number of added graphene film layers, which is an important parameter for realizing a tunable sensing platform in the project.
In order to research the influence of the number of nano deep holes on the absorption performance of a graphene device, a sparse nano deep hole graphene super-surface structure is designed, and the period is 10 multiplied by pxWhere p isxIs an infrared graphene-based narrow-band absorption unit. We then compared the change in reflectance spectra by adding nano-deep holes (i.e., holes opened in the super-surface of a high refractive index nano-cavity) therein. As shown in fig. 5, the increase of the nano-deep hole increases the number of the structure support modes, wherein 0 indicates no nano-deep hole in the structure and 1 to 9 indicate the number change of the nano-deep hole. From FIG. 6, we can find that the influence of the change of the number of nano-deep holes on the distribution of the electric field and the magnetic field, that is, the distribution difference of the electric field in the analyte (dielectric layer) and the high dielectric layer (high refractive index nano-cavity super-surface) is reduced due to the increase of the nano-holes; for magnetic fields, the number of nano-deep holes increases, as opposed to the distribution of the electric field in the two waveguide layers, the magnetic field becomes stronger in the high dielectric layer (high index nano-cavity metasurface) and weaker in the top analyte (dielectric layer).
According to the above results, the present invention has a narrow line width of 0.5nm, a good absorption peak of 97%, and is suitable for a refractive index sensor. The structure works with two channels, the first channel being the top dielectric region and the second channel being a nano-deep hole array. In order to study the sensing performance of the sensor, the refractive index of a sample is increased from 1.340 to 1.360, the reflection spectrum is shown in FIG. 7, the sensitivity can be obtained according to the sensitivity definition, and the quality factor is as high as 1000; the relationship between the absorption peak and the refractive index is shown in fig. 8, and the absorption rate decreases as the refractive index increases; FIG. 8 shows the relationship between the resonant wavelength and the reflection spectrum linewidth and the refractive index, the resonant wavelength shows a blue shift with the increase of the refractive index, and the reflection spectrum width increases, which is different from the prior art in which the sensing performance of the dual-channel narrow-band absorber designed by the present invention is superior to the prior art.
In the test process, under the condition of adopting a narrow-band light source, the detector is arranged in the first dielectric layer, the intensity change of the light is detected, the offset of an absorption peak can be observed, and the results of the intensity change and the offset are integrated to obtain the increase or decrease of the tiny refractive index.
In experiments, the installation of the structure under study can be carried out by installing the following steps: firstly, depositing a gold film on a glass substrate; secondly, preparing silicon to a gold substrate by sputtering; thirdly, preparing a nano cavity super surface with high refractive index by adopting a metal auxiliary etching technology; fourthly, preparing single-layer, double-layer and multi-layer graphene by adopting a chemical vapor deposition technology, and transferring the graphene to a PMMA layer; and fifthly, laminating the PMMA layer with the graphene layer to the super surface of the high-refractive-index nano cavity.
The infrared graphene-based narrow-band absorption unit is arranged on the basis of the oblique incidence mode of TE polarized light and comprises a dielectric layer, a buffer dielectric layer, a graphene film, a high-refractive-index nano-cavity super-surface and a metal substrate, wherein the dielectric layer is arranged on a first layer from top to bottom, the buffer dielectric layer is arranged on a second layer, the graphene film is arranged on a third layer, the high-refractive-index nano-cavity super-surface is arranged on a fourth layer, and the metal substrate is arranged on a fifth layer. The narrow absorption line width characteristic of the structure can be explained by coupling among modes, namely coupling of a gap mode of a nano deep hole, a conduction mode of a dielectric layer, and a surface plasmon resonance mode of a metal and high dielectric medium interface (a high-refractive-index nano cavity super surface). The narrow-band absorber structure is beneficial to designing a biosensor for detecting the tiny refractive index change of an analyte, and can be applied to the activity change of the neural stem cells, the neural cells and other stem cells in the nanometer scale in the development process.
Claims (9)
1. A dual-channel narrow-band absorber based on a TE polarized light oblique incidence mode is characterized in that: including infrared graphite alkene base narrowband absorption unit, infrared graphite alkene base narrowband absorption unit includes from the top down and is located the dielectric layer of first layer, is located the buffering dielectric layer of second layer, is located the graphite alkene film of third layer, is located the high refractive index nanometer chamber super surface of fourth layer, is located the metal substrate of fifth layer, the upper end face that the high refractive index nanometer chamber surpassed the surface sets up porosely downwards, pack the dielectric the same with the dielectric layer in the hole.
2. The dual-channel narrow-band absorber based on the oblique incident mode of the TE polarized light as claimed in claim 1, wherein: the infrared graphene-based narrow-band absorption unit is a cubic unit, and the length and width of the infrared graphene-based narrow-band absorption unit are 770 nm.
3. The dual-channel narrow-band absorber based on the oblique incident mode of the TE polarized light as claimed in claim 1, wherein: the buffer dielectric layer is made of low-refractive-index electrolyte PMMA, and the thickness of the buffer dielectric layer is 180 nm.
4. The dual-channel narrow-band absorber based on the oblique incident mode of the TE polarized light as claimed in claim 3, wherein: the low-refractive-index electrolyte is PMMA, and the thickness of the buffer dielectric layer is 180 nm.
5. The dual-channel narrow-band absorber based on the oblique incident mode of the TE polarized light as claimed in claim 1, wherein: the thickness of the graphene film is 0.34 nm.
6. The dual-channel narrow-band absorber based on the oblique incident mode of the TE polarized light as claimed in claim 1, wherein: the super surface material in high refracting index nanometer chamber is silicon, the super surface thickness in high refracting index nanometer chamber is 1.7um, the terminal surface diameter in hole is 100nm, the height of deep hole is 1.5 um.
7. The dual-channel narrow-band absorber based on the oblique incident mode of the TE polarized light as claimed in claim 1, wherein: the metal substrate is made of gold.
8. The dual-channel narrow-band absorber based on the oblique incident mode of the TE polarized light as claimed in claim 1, wherein: the number of layers of the graphene film is 1-25.
9. The dual-channel narrow-band absorber based on the oblique incident mode of the TE polarized light as claimed in claim 1, wherein: the infrared graphene-based narrow-band absorption units are periodically distributed along the transverse direction and the longitudinal direction.
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| US20200201111A1 (en) * | 2017-05-25 | 2020-06-25 | Cambridge Enterprise Limited | Method of Defining an Optical Filter Element and Optical Device Comprising a Filter Structure |
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