CN210443543U - 一种功率模块外框及单次回流功率模块 - Google Patents
一种功率模块外框及单次回流功率模块 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4846—Connecting portions with multiple bonds on the same bonding area
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
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Abstract
本实用新型公开了一种功率模块外框及单次回流功率模块,该功率模块外框包括:框体及设于框体上的PIN针,PIN针的上端与大气接触,下端设于框体内,下端底部横穿框体的内壁,且相对于内壁凸出,凸出部分即为PIN针的连接部,PIN针通过连接部与功率芯片电气连接。本实用新型将PIN针直接注塑在外框的四周,基于该外框的功率模块可以避免二次回流的风险,且多根PIN针通过注塑一次性的固定在外框上,简化了产品的生产工艺,提高了生产效率,可以缩短产品的生产周期。
Description
技术领域
本实用新型属于半导体技术领域,更具体地,本实用新型涉及一种功率模块外框及单次回流功率模块。
背景技术
IGBT模块(即功率模块)作为高功率电子器件,在新一代的工业制造、电动汽车制造、有轨电车制造以及新能源装备等领域有着广泛的应用。目前市面上IGBT模块多样化,结构相对分立器件及智能模块比较复杂,没有统一的标准,生产工艺繁杂,进而导致批量化生产困难。如何合理的改善产品结构,优化生产工艺,进而达到批量生产及质量可控,是IGBT领域的主要研究方向。
图1为现有的功率模块结构示意图,目前此款IGBT模块生产工艺如下:DBC(陶瓷覆铜基板)印刷锡膏,贴芯片,一次回流,清洗,焊线,点锡膏,Pin针组装,二次回流,二次清洗,外壳组装,灌胶。其中Pin针组装工序,由于工艺技术限制,需要单个插针后再进行组装,一颗产品需要Pin针至少二十几根,生产效率低,且因手动作业,产品品质不可控,有可能出现漏针,错针,变形,错位等一系列品质异常及不良,且产品需二次回流,二次回流时,芯片会因锡膏融化产生位移及张力,进而焊线也会有被拉扯的风险,二次清洗也会对焊线造成一定的损伤。因二次回流导致整个产品生产周期拉长。
实用新型内容
本实用新型提供一种功率模块外框,将PIN针直接注塑在外壳的四周,外框的PIN针通过焊线的方式跟产品电路进行连接,避免了二次回流的风险
本实用新型是这样实现的,一种功率模块外框,该外框包括:框体及设于框体上的PIN针,PIN针的上端与大气接触,下端设于框体内,下端底部横穿框体的内壁,且相对于内壁凸出,凸出部分即为PIN针的连接部,PIN针通过连接部与功率芯片电气连接。
进一步的,PIN针注塑在框体中,与框体一体化连接。
进一步的,PIN针呈L型。
本实用新型是这样实现的,一种单次回流功率模块,其特征在于,所述功率模块包括:功率模块外框、铜陶瓷基板、功率芯片、硅凝胶及盖板,外框的底部固定于铜陶瓷基板上,与铜陶瓷基板形成一腔体,功率芯片焊接于腔体内的铜陶瓷基板上,PIN针的连接部通过焊线与功率芯片及铜陶瓷基板电气连接,硅凝胶填充在腔体内,覆盖腔体内的整个功率芯片,盖板盖合在腔体的顶部。
本实用新型将PIN针直接注塑在外框的四周,功率模块可以避免二次回流的风险;多根PIN针通过注塑一次性的固定在外框上,简化了产品的生产工艺,提高了生产效率,可以缩短产品的生产周期;此外,外框的PIN针通过焊线跟产品电路进行连接,市面上有非常成熟的配合外壳焊线的设备,完全可实现自动化,减少了人工手动作业的弊端。
附图说明
图1为现有的功率模块结构示意图;
图2为本实用新型实施例提供的单次回流功率模块的结构示意图;
1.铜陶瓷基板、21.PIN针、22.框体、23.连接部、3.功率芯片、4.硅凝胶、5.盖板、6.焊线。
具体实施方式
下面对照附图,通过对实施例的描述,对本实用新型的具体实施方式作进一步详细的说明,以帮助本领域的技术人员对本实用新型的实用新型构思、技术方案有更完整、准确和深入的理解。
该功率模块外框包括:
框体22及设于框体22上的PIN针21,PIN针21的上端与大气接触,下端设于框体22内,PIN针21底部横穿框体22的内壁,且相对于内壁凸出,凸出部分即为PIN针21的连接部23,连接部23用于与功率芯片3电气连接;
在本实用新型实施例中,PIN针21注塑在框体22中,与框体22一体化连接,基于产品需求来设置注塑的PIN针21数量及位置。
在本使用进行实施例中,PIN针21呈L型,
本实用新型将PIN针直接注塑在外框的四周,基于该外框的功率模块可以避免二次回流的风险,且多根PIN针通过注塑一次性的固定在外框上,简化了产品的生产工艺,提高了生产效率,可以缩短产品的生产周期。
图2为本实用新型实施例提供的单次回流功率模块的结构示意图,为了便于说明,仅示出与本实用新型实施例相关的部分。
单次回流功率模块包括:
上述功率模块外框、铜陶瓷基板1、功率芯片3、硅凝胶4及盖板5,外框2的底部固定于铜陶瓷基板1上,与铜陶瓷基1板形成一腔体,功率芯片3焊接于腔体内的铜陶瓷基板1上,PIN针21的连接部23通过焊线6与功率芯片3及铜陶瓷基板1电气连接,硅凝胶4填充在腔体内,覆盖腔体内的整个功率芯片3,盖板5盖合在腔体的顶部。
上述单次回流功率模块的组装方法具体如下:S1、将PIN针注塑在框体的四周,形成外框;S2、在铜陶瓷基板上印刷导电膏体,通过回流焊接的方式将功率芯片固定在铜陶瓷基板上;S3、对焊接了功率芯片铜陶瓷基板进行清洗;S4、在外框的底部涂覆密封胶,通过密封胶将外框固定于铜陶瓷基板的四周,与铜陶瓷基板共同形成一腔体,S5、PIN针的连接部通过焊线与功率芯片电气连接;S6、向腔体内注入硅凝胶,至硅凝胶完全覆盖整个功率芯片;S7、将盖板固定在腔体的顶部,即形成功率模块。
本实用新型将PIN针直接注塑在外框的四周,功率模块可以避免二次回流的风险;多根PIN针通过注塑一次性的固定在外框上,简化了产品的生产工艺,提高了生产效率,可以缩短产品的生产周期;此外,外框的PIN针通过焊线跟产品电路进行连接,市面上有非常成熟的配合外壳焊线的设备,完全可实现自动化,减少了人工手动作业的弊端。
上面结合附图对本实用新型进行了示例性描述,显然本实用新型具体实现并不受上述方式的限制,只要采用了本实用新型的方法构思和技术方案进行的各种非实质性的改进,或未经改进将本实用新型的构思和技术方案直接应用于其它场合的,均在本实用新型的保护范围之内。
Claims (4)
1.一种功率模块外框,其特征在于,所述外框包括:框体及设于框体上的PIN针,PIN针的上端与大气接触,下端设于框体内,下端底部横穿框体的内壁,且相对于内壁凸出,凸出部分即为PIN针的连接部,PIN针通过连接部与功率芯片电气连接。
2.如权利要求1所述功率模块外框,其特征在于,PIN针注塑在框体中,与框体一体化连接。
3.如权利要求1或2所述功率模块外框,其特征在于,PIN针呈L型。
4.一种单次回流功率模块,其特征在于,所述功率模块包括:如权利要求1至3任一权利要求所述的功率模块外框、铜陶瓷基板、功率芯片、硅凝胶及盖板,外框的底部固定于铜陶瓷基板上,与铜陶瓷基板形成一腔体,功率芯片焊接于腔体内的铜陶瓷基板上,PIN针的连接部通过焊线与功率芯片及铜陶瓷基板电气连接,硅凝胶填充在腔体内,覆盖腔体内的整个功率芯片,盖板盖合在腔体的顶部。
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Address after: 241000 1803, building 3, service outsourcing park, Wuhu high tech Industrial Development Zone, Anhui Province Patentee after: Anhui Changfei Advanced Semiconductor Co.,Ltd. Address before: 241000 1803, building 3, service outsourcing park, high tech Industrial Development Zone, Yijiang District, Wuhu City, Anhui Province Patentee before: WUHU QIDI SEMICONDUCTOR Co.,Ltd. |