CN210194036U - Planetary multi-crucible PVT method crystal deposition reaction furnace - Google Patents
Planetary multi-crucible PVT method crystal deposition reaction furnace Download PDFInfo
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- CN210194036U CN210194036U CN201921270676.7U CN201921270676U CN210194036U CN 210194036 U CN210194036 U CN 210194036U CN 201921270676 U CN201921270676 U CN 201921270676U CN 210194036 U CN210194036 U CN 210194036U
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Abstract
The utility model provides a planetary many crucibles PVT method crystal deposition reacting furnace, relates to single crystal reaction equipment technical field, specifically includes reaction platform: a group of mounting grooves are processed on the reaction platform, mounting bearings are arranged at the bottoms of the mounting grooves, a driven rotating shaft is respectively arranged in each mounting bearing, a group of reaction crucibles are arranged above the driven rotating shaft, the lower parts of all the driven rotating shafts are matched and connected with a group of rotary driving devices, a group of heat-insulating protective covers are also arranged on the reaction platform, all the reaction crucibles are coated by the heat-insulating protective covers, induction coils are wound at the outer ends of the heat-insulating protective covers, and the induction coils are electrically connected with an external power supply through wires and a control switch; the utility model discloses a plurality of crucibles are rotatory by the unified drive of a set of rotary driving device, and in the reaction, rotatory crucible guarantees that the interior crystal deposition efficiency of crucible increases, can form stable even suitable single crystal sedimentary temperature gradient, reduces the cost of preparation.
Description
Technical Field
The invention relates to the technical field of single crystal reaction equipment, in particular to a planetary multi-crucible PVT method crystal deposition reaction furnace.
Background
At present, a single crucible is generally placed in a PVT method reaction furnace for growing single crystals such as silicon carbide or aluminum nitride and the like, and the main problems are that the crystal deposition rate is slow, and the stable and uniform temperature gradient suitable for single crystal deposition is difficult to control and form in the crucible, so that the deposition quality and the deposition rate are both low, and the preparation cost is high.
Disclosure of Invention
The invention overcomes the defects of the prior art and provides a planetary multi-crucible PVT method crystal deposition reaction furnace. According to the invention, a plurality of groups of reaction crucibles are arranged on the reaction platform, the outer ends of the reaction crucibles are provided with the heat insulation protective covers, the outer ends of the heat insulation protective covers are provided with the induction coils to supply heat to the reaction crucibles, the plurality of crucibles are driven to rotate by the group of rotary driving devices in a unified manner, the crucibles are rotated during reaction, the crystal deposition efficiency in the crucibles is increased, a stable and uniform temperature gradient suitable for single crystal deposition can be formed, and the preparation cost is reduced.
The technical scheme of the invention is as follows:
a planetary multi-crucible PVT crystal deposition reaction furnace comprises a reaction platform: a group of mounting grooves are processed on the reaction platform, the mounting grooves are circular grooves, a plurality of groups of bearing grooves are processed at the bottom of the mounting grooves at equal intervals in the circumferential direction, the bearing grooves are all provided with mounting bearings, each mounting bearing is internally provided with a driven rotating shaft, the upper part of the driven rotating shaft is fixedly connected with a group of heat insulation crucible trays, the heat insulation crucible trays are provided with limiting clamping grooves, a group of reaction crucibles are fixedly arranged on the heat insulation crucible tray through the limiting clamping grooves, the lower parts of all the driven rotating shafts are matched and connected with a group of rotary driving devices, the reaction platform is also provided with a group of heat insulation protective covers which cover all the reaction crucibles, the outer end of the heat insulation protective cover is wound with an induction coil, and the induction coil is electrically connected with an external power supply through a wire and a control switch.
Further, the rotary driving device comprises a group of rotary driving motors, the main shafts of the rotary driving motors are connected with a group of rotary driving gear keys, the rotary driving gears are meshed with a plurality of groups of driven gears, and the driven gears are arranged on the driven rotating shafts respectively.
Further, the heat-insulating crucible tray is a graphite tray.
Further, the insulating protective cover is a graphite protective cover or a tungsten protective cover.
Compared with the prior art, the invention has the following beneficial effects:
according to the invention, a plurality of groups of reaction crucibles are arranged on the reaction platform, the outer ends of the reaction crucibles are provided with the heat insulation protective covers, and the outer ends of the heat insulation protective covers are provided with the induction coils to supply heat to the reaction crucibles;
the invention realizes the simultaneous growth of a plurality of crystals in a plurality of crucibles in the same PVT method reaction furnace, improves the temperature distribution uniformity, ensures that the crucibles have the same deposition condition through the transmission of the rotating motor, improves the temperature field distribution uniformity and the energy utilization efficiency, greatly improves the quality and the yield of the silicon carbide crystal, obtains the silicon carbide crystal with less defects, improves the crystal growth rate to be about 3 times of that of a single crucible, greatly shortens the preparation period and reduces the preparation cost;
experiments of the invention show that under the condition of proper selection of heat insulation materials, the temperature of a similar deposition area is controlled, and by adopting the novel device, the power consumption in the silicon carbide (SiC) crystal growth process is improved by about 1.8-2.3 times of the original power consumption, and the crystal growth rate is improved by about 2.5-3.3 times of that of a single crucible, so that the preparation period is greatly shortened, and the preparation cost is reduced.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a top view of the present invention;
FIG. 3 is a schematic structural diagram of a second embodiment of the present invention;
fig. 4 is a circuit diagram of a heating resistance wire according to a second embodiment of the present invention.
FIG. 1-reaction platform; 2-driven rotating shaft; 3-insulating the crucible tray; 4-reaction crucible; 5-a rotation driving device; 6-heat insulating protective cover; 7-an induction coil; 51-a rotary drive motor; 52-rotating drive gear; 53-driven gear.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings.
The first embodiment is as follows:
referring to fig. 1 and 2, the planetary multi-crucible PVT crystal deposition reaction furnace disclosed in this embodiment includes a reaction platform 1, a set of mounting grooves are processed on the reaction platform 1, the mounting grooves are circular grooves, a plurality of sets of bearing grooves are processed at equal intervals in the circumferential direction at the bottom of the mounting grooves, mounting bearings are all arranged in the bearing grooves, each mounting bearing is respectively connected with a driven rotating shaft 2, a set of heat-insulating crucible trays 3 are fixedly connected above the driven rotating shaft 2, a limiting clamping groove is processed on each heat-insulating crucible tray 3, a set of reaction crucibles 4 are fixedly arranged on each heat-insulating crucible tray 3 through the limiting clamping groove, all the lower portions of the driven rotating shafts 2 are respectively connected with a set of rotary driving devices 5 in a matching manner, a set of heat-insulating protective covers 6 are further arranged on the reaction platform 1, and all the reaction crucibles 4 are covered by the heat-insulating protective covers 6, the outer end of the heat insulation protective cover 6 is wound with an induction coil 7, and the induction coil 7 is electrically connected with an external power supply through a wire and a control switch.
Specifically, the rotary driving device 5 includes a set of rotary driving motor 51, the main shaft of the rotary driving motor 51 is connected with a set of rotary driving gear 52 keys, the rotary driving gear 52 is meshed with a plurality of sets of driven gears 53, and the driven gears 53 are respectively arranged on the driven rotating shaft 2.
Specifically, the heat-insulating crucible tray 3 is a graphite tray.
Example two:
in the embodiment shown in fig. 3 and 4, a planetary multi-crucible PVT crystal deposition reaction furnace comprises a reaction platform 1, wherein a set of mounting grooves are formed in the reaction platform 1, the mounting grooves are circular grooves, a plurality of sets of bearing grooves are formed in the bottom of each mounting groove at equal intervals in the circumferential direction, mounting bearings are arranged in the bearing grooves, each mounting bearing is respectively connected with a driven rotating shaft 2, a set of heat-insulating crucible trays 3 are fixedly connected above the driven rotating shafts 2, a limiting clamping groove is formed in each heat-insulating crucible tray 3, a set of reaction crucibles 4 are fixedly arranged on each heat-insulating crucible tray 3 through the limiting clamping grooves, all the lower portions of the driven rotating shafts 2 are respectively connected with a set of rotary driving devices 5 in a matching manner, a set of heat-insulating protective covers 6 are further arranged on the reaction platform 1, and the heat-insulating protective covers all the reaction crucibles 4 by the heat-insulating protective covers 6, and a heating resistance wire 8 is wound at the inner end of the heat insulation protective cover 6, and the heating resistance wire 8 is electrically connected with an external power supply through a wire and a control switch.
The connection mentioned in the present invention is divided into a fixed connection and a detachable connection, wherein the fixed connection (i.e. the non-detachable connection) includes but is not limited to regular fixed connection modes such as a flanging connection, a riveting connection, an adhesive connection and a welding connection, and the detachable connection includes but is not limited to regular detachable modes such as a screw connection, a snap connection, a pin connection and a hinge connection. For example: the fixed connection selects welding connection, and the detachable connection selects hinge connection.
The above embodiments are merely illustrative of the present patent and do not limit the scope of the patent, and those skilled in the art can make modifications to the parts thereof without departing from the spirit and scope of the patent.
Claims (3)
1. A planetary multi-crucible PVT crystal deposition reaction furnace comprises a reaction platform (1): the device is characterized in that a set of mounting grooves are processed on the reaction platform (1), the mounting grooves are circular grooves, a plurality of sets of bearing grooves are processed in the circumferential direction of the bottom of each mounting groove at equal intervals, mounting bearings are arranged in the bearing grooves, each mounting bearing is internally provided with a driven rotating shaft (2), the upper part of each driven rotating shaft (2) is fixedly connected with a set of heat-insulating crucible trays (3), a limiting clamping groove is processed on each heat-insulating crucible tray (3), a set of reaction crucibles (4) are fixedly arranged on each heat-insulating crucible tray (3) through the limiting clamping grooves, all the lower parts of the driven rotating shafts (2) are matched and connected with a set of rotary driving devices (5), a set of heat-insulating protective covers (6) are further arranged on the reaction platform (1), and all the reaction crucibles (4) are coated by the heat-insulating protective covers (6), the outer end of the heat insulation protective cover (6) is wound with an induction coil (7), and the induction coil (7) is electrically connected with an external power supply through a wire and a control switch.
2. Planetary multi-crucible PVT-process crystal deposition reactor according to claim 1, characterized in that said rotary driving means (5) comprises a set of rotary driving motors (51), the main shaft of said rotary driving motors (51) being keyed with a set of rotary driving gears (52), said rotary driving gears (52) being meshed with a plurality of sets of driven gears (53), said driven gears (53) being arranged on said driven shafts (2) respectively.
3. Planetary multi-crucible PVT-process crystal deposition reactor according to claim 1, characterized in that the insulated crucible tray (3) is a graphite tray.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201921270676.7U CN210194036U (en) | 2019-08-07 | 2019-08-07 | Planetary multi-crucible PVT method crystal deposition reaction furnace |
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| CN201921270676.7U CN210194036U (en) | 2019-08-07 | 2019-08-07 | Planetary multi-crucible PVT method crystal deposition reaction furnace |
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| CN210194036U true CN210194036U (en) | 2020-03-27 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111809232A (en) * | 2020-07-21 | 2020-10-23 | 哈尔滨科友半导体产业装备与技术研究院有限公司 | Batch purification device and method for raw materials by PVT (polyvinyl dichloride) method |
| CN114000198A (en) * | 2021-11-15 | 2022-02-01 | 苏州优晶光电科技有限公司 | Multi-crucible silicon carbide crystal synchronous growth method and equipment |
| CN114411255A (en) * | 2021-12-30 | 2022-04-29 | 湖南金博碳基材料研究院有限公司 | Carbon/carbon composite material crucible, preparation method thereof and crystal growth furnace |
| CN114481323A (en) * | 2021-12-30 | 2022-05-13 | 湖南金博碳基材料研究院有限公司 | Carbon/carbon composite material crucible, preparation method thereof and crystal growth equipment |
| RU2811875C1 (en) * | 2021-11-15 | 2024-01-18 | Сучжоу Юкинг Семикондактор Текнолоджи Ко., Лтд. | Method and device for synchronous growth of silicon carbide crystals in multiple crucibles |
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2019
- 2019-08-07 CN CN201921270676.7U patent/CN210194036U/en active Active
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111809232A (en) * | 2020-07-21 | 2020-10-23 | 哈尔滨科友半导体产业装备与技术研究院有限公司 | Batch purification device and method for raw materials by PVT (polyvinyl dichloride) method |
| CN114000198A (en) * | 2021-11-15 | 2022-02-01 | 苏州优晶光电科技有限公司 | Multi-crucible silicon carbide crystal synchronous growth method and equipment |
| CN114000198B (en) * | 2021-11-15 | 2023-03-10 | 苏州优晶光电科技有限公司 | Multi-crucible silicon carbide crystal synchronous growth method and equipment |
| WO2023082913A1 (en) * | 2021-11-15 | 2023-05-19 | 苏州优晶光电科技有限公司 | Synchronous growth method and device for multi-crucible silicon carbide crystal |
| RU2811875C1 (en) * | 2021-11-15 | 2024-01-18 | Сучжоу Юкинг Семикондактор Текнолоджи Ко., Лтд. | Method and device for synchronous growth of silicon carbide crystals in multiple crucibles |
| CN114411255A (en) * | 2021-12-30 | 2022-04-29 | 湖南金博碳基材料研究院有限公司 | Carbon/carbon composite material crucible, preparation method thereof and crystal growth furnace |
| CN114481323A (en) * | 2021-12-30 | 2022-05-13 | 湖南金博碳基材料研究院有限公司 | Carbon/carbon composite material crucible, preparation method thereof and crystal growth equipment |
| CN114411255B (en) * | 2021-12-30 | 2023-01-03 | 湖南金博碳基材料研究院有限公司 | Carbon/carbon composite material crucible, preparation method thereof and crystal growth furnace |
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