CN210183590U

CN210183590U - Semiconductor microwave power source

Info

Publication number: CN210183590U
Application number: CN201920378084.0U
Authority: CN
Inventors: Zechun Zhu; 朱泽春; Pengcheng Wang; 王鹏程; Zhongyi Qiao; 乔中义
Original assignee: Joyoung Co Ltd
Current assignee: Shandong Jiuchuang Home Appliance Co ltd
Priority date: 2019-03-25
Filing date: 2019-03-25
Publication date: 2020-03-24
Anticipated expiration: 2029-03-25

Abstract

The utility model discloses a semiconductor microwave power source, including heat dissipation base, PCB board and transmitting antenna, the at least simultaneous covering of PCB board has the heat dissipation copper foil, and the PCB board is installed on the heat dissipation base and is made heat dissipation copper foil and heat dissipation base laminate mutually, and the gas pocket that runs through is seted up by the region that the heat dissipation copper foil covered on the PCB board. The utility model discloses in the semiconductor microwave power source that announces, can dispel the heat fast to prevent that gaseous oppression device and electronic circuit after being heated the inflation, can improve the job stabilization nature of semiconductor microwave power source, and increase of service life.

Description

Semiconductor microwave power source

Technical Field

The utility model relates to a semiconductor microwave field, more specifically say, relate to a semiconductor microwave power source.

Background

With the development of microwave technology, semiconductor microwave heating sources are gradually replacing traditional magnetrons and are applied to cooking household appliances, such as microwave ovens and rice cooker products which adopt semiconductor microwave sources for heating. However, the existing semiconductor microwave power source is not sufficient for microwave leakage, and thus, a user may be exposed to microwave radiation, thereby threatening the health of the user. In addition, the semiconductor microwave power source includes electronic devices, which are very fragile and sensitive to temperature, and when the semiconductor microwave power source is not well heat-dissipated, the stability and sensitivity of the electronic devices are affected, and the gas around the devices may exert pressure on electronic circuits and the like after being heated and expanded, which may cause the devices to be damaged by pressure.

SUMMERY OF THE UTILITY MODEL

The utility model discloses a solve the problem that prior art exists, a semiconductor microwave power source is provided, this semiconductor microwave power source is including heat dissipation base, PCB board and transmitting antenna, wherein the PCB board covers simultaneously at least has the heat dissipation copper foil, the gas pocket that runs through is seted up by the region that the heat dissipation copper foil covered on the PCB board, so set up and to avoid the electron device on the PCB board to produce high temperature at the during operation, lead to the gas expansion around the electron device and crush the electronic circuit.

In order to achieve the above purpose, the utility model adopts the following technical scheme:

the utility model provides a semiconductor microwave power source, includes heat dissipation base, PCB board and transmitting antenna, and at least one side of PCB board covers there is the heat dissipation copper foil, and the PCB board is installed on heat dissipation base and makes heat dissipation copper foil and heat dissipation base laminate mutually, and the gas pocket that runs through is seted up to the region that is covered by the heat dissipation copper foil on the PCB board.

Furthermore, the surface of the heat dissipation base, which is in contact with the heat dissipation copper foil, is provided with fluctuated grooves at intervals, and the positions of the grooves on the heat dissipation base correspond to the air holes.

Furthermore, a groove for accommodating the PCB is formed in the heat dissipation base, a table board for supporting the PCB is arranged in the groove, and the PCB is embedded in the groove.

Furthermore, a heating device is arranged on the PCB, and a radiator is arranged below the PCB at the position corresponding to the heating device.

Furthermore, the table board is provided with a containing cavity matched with the radiator, and the radiator is embedded in the containing cavity and attached to the inner wall of the containing cavity.

Furthermore, a shielding cover is arranged above the PCB and is installed on the heat dissipation base, and the PCB is pressed and fixed on the heat dissipation base.

Further, the diameter of the air hole is 0.1-2 mm.

Further, the spacing between the flutes is not more than 3mm, and the depth of the flutes is 0.6 to 6.3 μm.

Furthermore, the shielding cover is integrated into one piece, or the shielding cover is enclosed by the side vertical plate and the upper cover plate.

Furthermore, isolation ribs are arranged in the shielding cover to separate the heating devices from each other.

The utility model discloses technical scheme's beneficial effect as follows:

the utility model discloses a semiconductor microwave power source, this semiconductor microwave power source accelerate the heat dissipation of electron device through the heat dissipation copper foil to be provided with the gas pocket that runs through in the corresponding region of PCB board, when the device temperature risees to make gas expansion produce the high pressure, corresponding pressure can dredge to PCB board back and device slot structure on every side through the gas pocket, thereby reduced the gas pressure that the electronic circuit received, avoided the damage of electronic circuit.

Drawings

Fig. 1 is a schematic structural diagram of a semiconductor microwave power source according to the present invention;

fig. 2 is a top view of one embodiment of the semiconductor microwave power source of the present invention;

fig. 3 is a schematic structural diagram of a heat dissipation base according to an embodiment of the semiconductor microwave power source of the present invention;

fig. 4 is a schematic view illustrating the installation of a heat sink in one embodiment of the semiconductor microwave power source of the present invention;

fig. 5 is an enlarged schematic view of a groove structure in an embodiment of the semiconductor microwave power source of the present invention.

Detailed Description

The technical solution provided by the present invention is described in more detail below with reference to the accompanying drawings and specific embodiments:

fig. 1 is a schematic structural diagram of a semiconductor microwave power source according to the present invention. In this embodiment, a semiconductor microwave power source is disclosed, which includes a heat dissipation base 104, a (printed circuit board) PCB 103, and an emitting antenna 105, wherein at least one surface of the PCB 103 is covered with a heat dissipation copper foil, the PCB 103 is mounted on the heat dissipation base 104 and the heat dissipation copper foil is attached to the heat dissipation base 104, and a through air hole 119 is formed in an area of the PCB 103 covered by the heat dissipation copper foil. In one embodiment of the present invention, the semiconductor microwave power source is further provided with a shielding frame 102 and an upper cover plate 101.

In the semiconductor microwave power source disclosed in this embodiment, the heat-dissipating copper foil is disposed on one or both surfaces of the PCB 103, thereby improving heat-dissipating efficiency and reducing the probability of heat loss of the device. In addition, the area covered by the heat dissipation copper foil on the PCB 103 is also provided with a through air hole 119, the arrangement of the through air hole 119 is not only beneficial to the gas above the PCB 103 carrying heat and then passing through the air hole 119 to be transmitted to the heat dissipation base 104 downwards, but also can avoid the pressure generated by gas expansion to directly act on devices and electronic circuits on the PCB 103, thereby reducing the probability that the devices and the electronic circuits are damaged due to compression, and greatly prolonging the service life of the semiconductor microwave power source.

Fig. 1 and 2 relate to a further embodiment of a semiconductor microwave power source according to the present invention. As shown in fig. 1 and 2, the semiconductor microwave power source includes a heat dissipation base 104, a (printed circuit board) PCB 103, and a transmitting antenna 105, at least one device is disposed on the PCB 103, the PCB 103 is mounted on the heat dissipation base 104, a closed shielding frame 102 is further disposed on an upper surface of the heat dissipation base 104, the shielding frame 102 surrounds the PCB 103 along an edge of the PCB 103, and the transmitting antenna 105 is disposed outside the shielding frame 102, wherein the PCB 103 includes a first region 106 and a second region 107, and the first region 106 and the second region 107 are separated by a first isolation rib 108 disposed in the shielding frame 102.

In this embodiment, the semiconductor microwave power source is provided with a shielding frame 102, and the shielding frame 102 can play a role in blocking and preventing the microwave from overflowing. Meanwhile, the first isolation rib 108 is arranged in the shielding frame 102, and the PCB 103 is divided into the first area 106 and the second area 107 by the first isolation rib 108, so that microwave disturbance of devices between the two areas in the working process can be prevented, and the working stability of the semiconductor microwave power source is ensured.

In one embodiment of the semiconductor microwave power source of the present invention, the surface of the heat dissipation base, which is in contact with the heat dissipation copper foil, is provided with undulating grooves at intervals, and the positions of the grooves on the heat dissipation base correspond to the air holes.

In this embodiment, the surface of the heatsink base 104 that contacts the heatsink copper foil (i.e., the top surface of the heatsink base 104 in fig. 1) is provided with alternating raised and recessed grooves, which are not shown in fig. 1 on the top surface of the heatsink base 104 because the grooves have a very shallow depth and are substantially of a microstructure. The fluted configuration corresponds to the air holes 119 in the PCB board 103, allowing air passing through the air holes 119 to remain in or flow along the fluted configuration, thereby relieving the pressure of the air carrying the heat of the device on the back side of the PCB board 103 and more rapidly and widely transferring the heat to the heat sink base 104.

In one embodiment of the semiconductor microwave power source, the heat dissipation base has a recess for accommodating the PCB, the recess is provided with a table top for supporting the PCB, and the PCB is embedded in the recess. In one embodiment of the semiconductor microwave power source, a heating device is disposed on the PCB, and the heating device corresponds to the position of the PCB below the PCB.

As shown in fig. 3, a groove 120 is formed on the heat dissipation base 104, a table 121 for supporting the PCB 103 is disposed in the groove 120, and the PCB 103 is embedded in the groove 120. In one embodiment, the PCB 103 is further pressed on the heat dissipation base 104 through the shielding frame 102, and the PCB 103 is well fixed and does not slide or fall under the limiting action of the groove 120 and the shielding frame 102. In this embodiment, the PCB 103 is provided with heat generating devices, as shown in fig. 2, the heat generating devices include control devices and power devices, wherein the control devices are located in the first area 106 and the power devices are located in the second area 107. The control device comprises a (micro control unit) MCU109 electrically connected with the power supply circuit and the control circuit, and the MCU109 can control the on-off of the microwave according to instructions and adjust parameters such as power, frequency and the like of the microwave. The power device comprises a microwave signal generating element 110 and a power amplifier 111, and because the microwave signal generating element 110 and the power amplifier 111 both belong to power devices, the generated microwaves are large, and therefore, in order to avoid mutual interference between the microwaves, a second isolation rib 112 is arranged between the microwave signal generating element 110 and the power amplifier 111 to isolate the microwaves through electromagnetic shielding.

The control device and the power device are both semiconductor electronic devices, belong to heat-generating devices and are very sensitive to temperature, so heat dissipation is required, and in this embodiment, as shown in fig. 4, a heat sink 114 is arranged below the PCB 103 at a position corresponding to the heat-generating device. The PCB 103 is provided with a through hole, the heating device (such as the MCU109) is embedded in the corresponding through hole, and the heat sink 114 covers the MCU109 from the outside and is disposed close to the bottom of the PCB 103. Because the heating device penetrates through the PCB 103 and is directly mounted on the heat sink 114, the heat generated by the heating device can directly reach the heat sink 114 and then be conducted to the heat dissipation base 104 to be dissipated without being transferred through the PCB 103, thereby greatly improving the heat dissipation efficiency.

In one embodiment of the semiconductor microwave power source, the table top is provided with a cavity matched with the heat sink, and the heat sink is embedded in the cavity and attached to the inner wall of the cavity. In the embodiment shown in fig. 3, the top 121 is provided with an accommodating cavity 122 matching with the heat sink 114, the heat sink 114 is embedded in the accommodating cavity 122, and the side and bottom of the heat sink 114 are closely attached to the accommodating cavity 122, so that heat can be rapidly transferred to the heat dissipation base 104 through the heat sink 114, and finally dissipated to the atmosphere outside the semiconductor microwave power source through the fins of the heat dissipation base 104, thereby achieving the purpose of cooling the electronic device.

In one embodiment of the semiconductor microwave power source, a shielding cover is disposed above the PCB, and the shielding cover is mounted on the heat dissipation base and fixes the PCB to the heat dissipation base. In one embodiment of the semiconductor microwave power source of the present invention, the shielding cover is integrally formed, or the shielding cover is formed by enclosing the side vertical plate and the upper cover plate.

As shown in fig. 1, the shielding case in this embodiment includes a shielding frame 102 and an upper cover plate 101, which are formed by side vertical plates, the shielding case is formed by enclosing the side vertical plates, the shielding frame 102 and the upper cover plate 101 are fixed by screw holes, and the two are tightly attached to each other, so as to prevent electromagnetic leakage. In other embodiments, the shield can may also be integrally formed, thereby simplifying the manufacturing and installation process of the shield can. The shielding frame 102 and the upper cover plate 101 are made of metal materials, and microwave interference between devices is blocked by means of an electromagnetic shielding effect. The upper cover plate 101 covers the shielding frame 102, preferably, the upper cover plate 101 is tightly attached to the first isolation rib 108 and the second isolation rib 112, so that the first region 106 and the second region 107 form a sealed cavity, thereby enabling microwave signals and electromagnetic signals between the cavities to interfere complementarily, and ensuring the normal operation of the whole semiconductor microwave power source.

In one embodiment of the semiconductor microwave power source of the present invention, the diameter of the air hole is 0.1-2 mm. The diameter of the air hole 119 in this embodiment is 0.1-2mm, and the aperture of the air hole 119 is smaller than 0.1mm, which may obstruct the smooth flow of the air flow and may result in poor heat dissipation effect of the electronic device; if the aperture of the air hole 119 is larger than 2mm, the area occupied by the PCB 103 is large, which affects the wiring of the PCB 103.

In one embodiment of the semiconductor microwave power source of the present invention, the interval between the grooves is not more than 3mm, and the depth of the groove is 0.6-6.3 μm.

As shown in fig. 5, is a microscopic enlargement of the fluted construction of one embodiment of the invention. In this embodiment, the surface of the heat dissipation base 104 contacting with the heat dissipation copper foil on the PCB 103 is provided with undulating flutes at intervals, the interval w between the flutes is not more than 3mm, if the flute interval is too wide, the number of the flutes laid on the same area on the upper surface of the heat dissipation base 104 is greatly reduced, thereby affecting the heat dissipation and pressure dissipation effects. The depth h of the flutes is in the range of 0.6-6.3 μm to ensure that the flutes are of sufficient depth to accommodate the gas. The gas after heating expansion enters the space between the PCB board 103 and the heat dissipation base 104 through the air hole 119, and is filled into the grooves for retention or circulation, at the moment, the gas generates pressure in the horizontal direction and the vertical direction in the grooves, and presses the side wall and the bottom of the grooves, and correspondingly, the pressure directly born by the front side and the back side of the PCB board 103 is lightened, so that the damage or the fracture of devices and electronic circuits on the PCB board 103 due to the compression is avoided, and the working stability and the service life of the semiconductor microwave power source are greatly improved.

In one embodiment of the semiconductor microwave power source of the present invention, the shielding cover is provided with an isolation rib therein to separate the heating devices from each other.

In one embodiment of the semiconductor microwave power source, the PCB board is provided with a magnetic strip, the magnetic strip is located on the dividing line of the first region and the second region, and is tightly attached to the first isolation rib and the first isolation rib are located near one side of the first region. In this embodiment, the PCB 103 is further provided with a magnetic conductive strip 113, the magnetic conductive strip 113 is located on a dividing line between the first region 106 and the second region 107, and is close to the first isolation rib 108 and located on a side close to the first region 106, and preferably, the magnetic conductive strip 113 is soft magnetic, so that electromagnetic interference generated by electrical signals of the power device and the control device can be further shielded, and thus magnetic induction signals generated by changes of the electrical signals can be absorbed.

In one embodiment of the semiconductor microwave power source, the shielding frame is provided with a wire hole left on one side of the transmitting antenna, the transmitting antenna is electrically connected to the power amplifier through the wire hole, and is fixed to the shielding frame and the heat dissipation base through a flange. In this embodiment, as shown in fig. 2, the left side of the shield frame 102 is provided with the transmitting antenna 105, and the shield frame 102 is provided with a wire hole on the side wall of the side through which the wire head 116 of the transmitting antenna 105 passes and is electrically connected to the power amplifier 111 through the circuit structure on the PCB board 103. The transmitting antenna 105 is fixed to the shielding frame 102 and the heat dissipation base 104 through the flange 115, and the microwave with amplified power is fed into the food material through the transmitting antenna 105 for heating.

The above embodiments are only for illustrating the design method of the present invention, and can not be used to limit the protection scope of the present invention. To being in the utility model discloses deformation and conversion under technical scheme's the thought guidance all should fall back to the utility model discloses within the scope of protection.

Claims

1. The utility model provides a semiconductor microwave power source, includes heat dissipation base, PCB board and transmitting antenna, its characterized in that, at least one side of PCB board covers there is the heat dissipation copper foil, the PCB board install in on the heat dissipation base and make the heat dissipation copper foil with the heat dissipation base is laminated mutually, by on the PCB board the gas pocket that runs through is seted up in the region that the heat dissipation copper foil covered.

2. The semiconductor microwave power source of claim 1, wherein the surface of the heat sink base in contact with the heat sink copper foil is provided with alternating grooves, the positions of the grooves on the heat sink base corresponding to the air holes.

3. The semiconductor microwave power source of claim 1, wherein the heat dissipation base has a recess for accommodating the PCB, the recess having a top for supporting the PCB, and the PCB is embedded in the recess.

4. A semiconductor microwave power source according to claim 3, wherein a heat generating device is disposed on the PCB, and a heat sink is disposed below the PCB at a position corresponding to the heat generating device.

5. The semiconductor microwave power source of claim 4, wherein the table top is provided with a receiving cavity matched with the heat sink, and the heat sink is embedded in the receiving cavity and attached to the inner wall of the receiving cavity.

6. The semiconductor microwave power source according to claim 4 or 5, wherein a shielding case is disposed above the PCB, and the shielding case is mounted on the heat dissipation base and press-fits and fixes the PCB to the heat dissipation base.

7. A semiconductor microwave power source according to any one of claims 1 to 5, characterized in that the diameter of the air holes is 0.1-2 mm.

8. A semiconductor microwave power source according to claim 2 wherein the spacing between the flutes is no more than 3mm, the flutes being 0.6-6.3 μm deep.

9. The semiconductor microwave power source of claim 6, wherein the shielding case is integrally formed, or the shielding case is enclosed by a side vertical plate and an upper cover plate.

10. A semiconductor microwave power source according to claim 9, wherein isolation ribs are provided within the shield to separate the heat generating devices from each other.