CN210182774U - Packaging structure and stacked array structure of semiconductor laser - Google Patents
Packaging structure and stacked array structure of semiconductor laser Download PDFInfo
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- CN210182774U CN210182774U CN201921419944.7U CN201921419944U CN210182774U CN 210182774 U CN210182774 U CN 210182774U CN 201921419944 U CN201921419944 U CN 201921419944U CN 210182774 U CN210182774 U CN 210182774U
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Abstract
The utility model provides a packaging structure and fold battle array structure of semiconductor laser relates to semiconductor device packaging technology field. This stack matrix packaging structure includes: the method comprises the following steps: semiconductor laser chip, conductive substrate, reinforcement piece. Two bonding surfaces of the semiconductor laser chip are respectively parallel to and bonded with one conductive substrate. The reinforcing sheet is fixed on the side face of the conductive substrate and is parallel to the stacking direction of the semiconductor laser chip and the conductive substrate, wherein the thermal expansion coefficient of the reinforcing sheet is larger than that of a combination body of the semiconductor laser chip and the conductive substrate, so that the reinforcing sheet applies enough compressive stress to the semiconductor laser chip and the ceramic substrate in the thickness direction, the sufficient compressive stress is offset from the tensile stress in the thickness direction of the semiconductor laser chip and the conductive substrate, and the risk of cracking of the semiconductor laser chip in a GS structure is reduced.
Description
Technical Field
The utility model relates to a semiconductor device encapsulates technical field, particularly, relates to a packaging structure and fold battle array structure of semiconductor laser.
Background
The semiconductor laser has the advantages of small volume, long service life and the like, so that the semiconductor laser has wide application in many fields. In order to increase the unit area brightness in a stack (stack) structure of a semiconductor laser, a structure (GS structure) in which a chip is perpendicular to a heat sink is often adopted, and a multi-layer structure in which copper and tungsten are spaced from the chip is adopted to realize packaging in the perpendicular structure. This causes the GS structure to bear tensile stress on the upper light-emitting surface of the chip, which results in cracking of the chip.
In the prior art, the bottom insulating ceramic of the GS structure is designed into an integrated ceramic, so that the bending strength of the GS structure is enhanced, and the tensile stress borne by the upper light-emitting surface of the chip is relieved.
However, the bending strength of the ceramic material is far from the bending strength of the copper-tungsten material, so the reduced tensile stress is limited, the tensile stress in the GS structure is still difficult to be effectively relieved, and the chip still has the risk of cracking.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to the not enough among the above-mentioned prior art, provide a packaging structure of semiconductor laser and fold battle array structure to the tensile stress in solving the GS structure still is difficult to obtain effectual alleviating, and the chip still has the problem of the risk of fracture.
In order to achieve the above object, the embodiment of the present invention adopts the following technical solutions:
in a first aspect, an embodiment of the present invention provides a package structure of a semiconductor laser, including: semiconductor laser chip, conductive substrate, reinforcement piece. Two bonding surfaces of the semiconductor laser chip are respectively parallel to and bonded with one conductive substrate. The reinforcing sheet is fixed on the side face of the conductive substrate, and the reinforcing sheet is parallel to the stacking direction of the semiconductor laser chip and the conductive substrate, wherein the Coefficient of Thermal Expansion (CTE) of the reinforcing sheet is larger than that of the combination of the semiconductor laser chip and the conductive substrate.
Optionally, the conductive substrate is a ceramic substrate, a plurality of conductive vias are disposed on the ceramic substrate, and two ends of each conductive via are electrically connected to the metal layer coated on the ceramic substrate. Or the conductive substrate is a metal substrate, and an insulating layer is arranged between the metal substrate and the reinforcing sheet.
Optionally, a metal solder is disposed on the reinforcing sheet, and the metal solder is used for welding with a metal layer on the ceramic substrate.
Optionally, the metal solder on the reinforcing sheet is: and the melting point of the hard solder is less than or equal to the preset melting point, and the preset melting point is the melting point of the packaging solder of the semiconductor laser chip.
Optionally, there are two reinforcing tabs. The two reinforcing pieces are symmetrically arranged on two opposite side surfaces of the conductive substrate.
Optionally, a dimension of the reinforcing patch in the light exit direction is greater than or equal to a cavity length of the semiconductor laser chip, and is greater than or equal to a dimension of the conductive substrate in the light exit direction.
Optionally, the material of the reinforcing patch comprises at least one of a metal, a ceramic, or a metal composite.
In a second aspect, an embodiment of the present invention provides a stacked array structure of a semiconductor laser, including at least two semiconductor laser's packaging structure provided by the first aspect. The semiconductor laser chips in the packaging structures of the at least two semiconductor lasers and the conductive substrate are arranged at intervals and are stacked and arranged along the vertical direction of the bonding surfaces of the semiconductor laser chips and the conductive substrate. The reinforcing pieces are parallel to the stacking direction and are arranged on two opposite side surfaces of the conductive substrate.
Optionally, a length of the reinforcing patch in a stacking direction of the semiconductor laser chip and the conductive substrate is greater than or equal to a distance between two farthest apart conductive substrates.
Optionally, the stacked array structure of semiconductor lasers further includes: a heat sink. The semiconductor laser chip and the conductive substrate are vertically arranged on the heat sink along the light-emitting direction of the semiconductor laser chip.
The utility model has the advantages that: through the both ends with reinforcement piece vertical fixation at conductive substrate, the reinforcement piece is on a parallel with the semiconductor laser chip and conductive substrate's the direction of piling up, and reinforcement piece and semiconductor laser chip contactless, wherein, the coefficient of thermal expansion of reinforcement piece is greater than the coefficient of expansion of semiconductor laser chip and conductive substrate assembly, make at the in-process of encapsulation cooling, the reinforcement piece exerts sufficient compressive stress to semiconductor laser chip and conductive substrate in the thickness direction, with the tensile stress offset in semiconductor laser chip and the conductive substrate self thickness direction, the risk of semiconductor laser chip fracture in the GS structure has been reduced.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention, and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
Fig. 1 is a schematic diagram of a package structure of a semiconductor laser according to an embodiment of the present invention;
fig. 2 is a top view of a package structure of a semiconductor laser according to an embodiment of the present invention;
fig. 3 is a cross-sectional view of a ceramic substrate in a package structure of a semiconductor laser according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of a stacked array structure of a semiconductor laser according to an embodiment of the present invention;
fig. 5 is a cross-sectional view of a GS structure in a stacked structure of semiconductor lasers according to another embodiment of the present invention.
Icon: 101-a semiconductor laser chip; 102-a conductive substrate; 103-a reinforcing sheet; 104-heat sink; 105-a metal layer; 106-conductive vias; 107-metallic solder; 108-secondary solder.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of embodiments of the present invention, as generally described and illustrated in the figures herein, may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present invention, presented in the accompanying drawings, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate the position or positional relationship based on the position or positional relationship shown in the drawings, or the position or positional relationship which is usually placed when the product of the present invention is used, and are only for convenience of description and simplification of the description, but do not indicate or imply that the device or element referred to must have a specific position, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," "third," and the like are used solely to distinguish one from another and are not to be construed as indicating or implying relative importance.
Furthermore, the terms "horizontal", "vertical" and the like do not imply that the components are required to be absolutely horizontal or pendant, but rather may be slightly inclined. For example, "horizontal" merely means that the direction is more horizontal than "vertical" and does not mean that the structure must be perfectly horizontal, but may be slightly inclined.
In the description of the present invention, it should also be noted that, unless otherwise explicitly specified or limited, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Fig. 1 is a schematic diagram of a package structure of a semiconductor laser according to an embodiment of the present invention, and fig. 2 is a top view of a package structure of a semiconductor laser according to an embodiment of the present invention.
As shown in fig. 1 and 2, the package structure of the semiconductor laser is a single bar structure, and includes:
a semiconductor laser chip 101, a conductive substrate 102, a reinforcing sheet 103, and a heat sink 104. Two bonding surfaces of the semiconductor laser chip 101 are respectively parallel to and bonded with one conductive substrate 102, and the semiconductor laser chip 101 and the conductive substrate 102 are vertically arranged on the heat sink 104 along the light emitting direction. The reinforcing patch 103 is fixed on the side surface of the conductive substrate 102, the reinforcing patch 103 is parallel to the stacking direction of the semiconductor laser chip 101 and the conductive substrate 102, and the reinforcing patch 103 is not in contact with the semiconductor laser chip 101, wherein the thermal expansion coefficient of the reinforcing patch 103 is greater than the thermal expansion coefficient of the combination of the semiconductor laser chip 101 and the conductive substrate 102.
In some embodiments, the conductive substrate 102 may be a metal substrate or a ceramic substrate, the metal substrate itself has a conductive capability, but the ceramic substrate needs a conductive treatment to make it have a conductive capability.
In some embodiments, the reinforcing sheet 103 and each of the conductive substrates 102 bonded to the semiconductor laser chip 101 are fixedly bonded, respectively, for example, in the present embodiment, two conductive substrates 102 bonded to the semiconductor laser chip 101 are provided, and the reinforcing sheet 103 is fixedly bonded to the two conductive substrates 102, respectively.
Optionally, the optical module may further include a heat sink 104, where the semiconductor laser chip 101 and the conductive substrate 102 are vertically disposed on the heat sink 104 along the light emitting direction of the semiconductor laser chip 101, and the heat sink 104 may be a conductive heat sink, a macro-channel water-cooling heat sink, or a micro-channel water-cooling heat sink, which is made of copper-based metal or a composite material of metal and ceramic, and the like, which is not limited herein.
It should be noted that, when the package structure of the semiconductor laser is actually packaged, the temperatures of the semiconductor laser chip 101, the conductive substrate 102, and the reinforcing sheet 103 are simultaneously raised, and after the package structure of the semiconductor laser is packaged at a high temperature, the temperature is lowered to room temperature, and since the thermal expansion coefficient of the reinforcing sheet 103 is greater than the average value of the thermal expansion coefficient of the semiconductor laser chip and the thermal expansion coefficient of the conductive substrate, the contraction width of the reinforcing sheet 103 at this time is greater than that of the semiconductor laser chip 101 and the conductive substrate 102, and therefore, the reinforcing sheet 103 applies a certain compressive stress to the semiconductor laser chip 101 and the conductive substrate 102 in the thickness direction, and the compressive stress can counteract the tensile stress of the plane perpendicular to the light emitting direction when. Because the bottom insulating ceramic in the prior art is eliminated, a layer of solder is reduced, and the heat dissipation effect is improved; meanwhile, the packaging difficulty is reduced, and the selection difficulty of the solder combination in the GS structure is reduced, so that the packaging structure of the semiconductor laser is easier to produce.
In this embodiment, the reinforcing sheet is vertically fixed on each conductive substrate bonded with the semiconductor laser chip, the reinforcing sheet is parallel to the stacking direction of the semiconductor laser chip and the conductive substrate, the reinforcing sheet is not in contact with the semiconductor laser chip, and the thermal expansion coefficient of the reinforcing sheet is greater than the average value of the thermal expansion coefficient of the semiconductor laser chip and the thermal expansion coefficient of the ceramic substrate, so that the reinforcing sheet applies sufficient compressive stress to the semiconductor laser chip and the ceramic substrate in the thickness direction, the compressive stress is offset from the tensile stress in the thickness direction of the semiconductor laser chip and the conductive substrate, and the risk of cracking of the semiconductor laser chip in the GS structure is reduced.
Optionally, the conductive substrate is a ceramic substrate, a plurality of conductive vias are disposed on the ceramic substrate, and two ends of each conductive via are electrically connected to the metal layer coated on the ceramic substrate.
Fig. 3 is a cross-sectional view of a ceramic substrate in a package structure of a semiconductor laser according to an embodiment of the present invention.
Alternatively, as shown in fig. 3, the conductive substrate 102 is a ceramic substrate, a plurality of conductive vias 106 are disposed on the ceramic substrate, and two ends of each conductive via 106 are electrically connected to the metal layer 105 disposed on the ceramic substrate.
The material of the ceramic substrate may be aluminum nitride or silicon carbide, and the material of the metal layer 105 may be gold, silver or copper. Depending on the manner in which the Ceramic substrate is Bonded to the metal layer 105 and the choice of materials, the Ceramic substrate and the metal layer 105 may be combined into a metallized Ceramic substrate, such as, but not limited to, a Plated metal aluminum nitride Ceramic (DPC) or a Direct Bonded Copper clad Ceramic (DBC). Because the thermal conductivity of the metallized ceramic substrate (DPC/DBC) is far greater than that of the copper-tungsten (Cu10W90) material in the prior art, better heat dissipation capability is provided.
In some embodiments, the conductive via 106 is a through hole penetrating through the ceramic substrate, and the inner wall of the through hole is plated with a conductive material or the through hole is filled with a conductive material, and the conductive material can be soldered to the metal layer 105 to ensure the stability of the electrical connection.
The metal layers 105 are electrically connected through the conductive through holes, so that the stability of electrical connection can be ensured, and the designed electrical performance requirements can be met.
Alternatively, the material of the ceramic substrate is a thermally conductive ceramic having a thermal expansion coefficient smaller than that of the semiconductor laser chip 101.
It should be noted that the thermal expansion coefficient of the ceramic substrate is smaller than that of the semiconductor laser chip 101, so that the tensile stress generated in the packaging process can be reduced, and meanwhile, the heat dissipation effect of the packaging structure of the semiconductor laser can be enhanced because the ceramic substrate is made of the heat-conducting ceramic.
Optionally, a secondary solder 108 is disposed between the ceramic substrate and the heat sink, the secondary solder 108 being used to connect the ceramic substrate and the heat sink.
Note that the metallized ceramic substrate (DPC/DBC) does not rely on a bottom dielectric ceramic for insulation, but rather is connected to a heat sink by a secondary solder 108. Therefore, ceramics having a low dielectric strength such as silicon carbide can be used as the ceramic substrate. The material selection range of the ceramic substrate is wider, and the process difficulty is reduced.
Through fixedly connecting the reinforcing sheet 103 with the ceramic substrate, the reinforcing sheet 103 can better apply compressive stress to the GS structure, and the stability of the stacked array packaging structure is improved.
Or the conductive substrate is a metal substrate, and an insulating layer is arranged between the metal substrate and the reinforcing sheet.
Alternatively, referring to fig. 1 and 2, if the conductive substrate 102 is a metal base plate, insulating layers are disposed between the metal base plate and the reinforcing sheet 103, and between the metal base plate and the heat sink 104.
In some embodiments, the material of the metal substrate may be copper-tungsten alloy, and since the reinforcing patch and the heat sink may have conductivity, an insulating layer needs to be added between the metal substrate and the reinforcing patch 103 and between the metal substrate and the heat sink 104 to ensure that no short circuit occurs and meet the requirement of electrical design.
Alternatively, the reinforcing sheet 103 is provided with a metal solder 107, and the metal solder 107 is used for soldering with the metal layer 105 of the ceramic substrate.
In some embodiments, the reinforcing sheet 103 is welded to the metal layer 105 of the ceramic substrate by the metal solder 107, so that the reinforcing sheet 103 and the metal solder 107 are fixedly connected to realize that the reinforcing sheet 103 applies compressive stress to the GS structure. Alternatively, the reinforcing sheet 103 may be fixedly connected to the ceramic substrate by gluing, which is not limited herein.
Optionally, the metal solder 107 on the reinforcing sheet 103 is: the hard solder has a melting point less than or equal to a predetermined melting point, which is a melting point of the package solder of the semiconductor laser chip 101.
The melting point of the metal solder 107 is less than or equal to the melting point of the packaging solder of the semiconductor laser chip 101, such as zinc gold, gold germanium, zinc gold copper (Sn-Au-Cu, SAC), and the like, which is not limited herein.
By using the metal solder 107, when the reinforcing sheet 103 is soldered on the conductive substrate 102, the package of the semiconductor laser chip 101 is not affected, and the production process is simplified.
Optionally, when the conductive substrate 102 is a ceramic substrate, a metal solder 107 is further disposed on the metal layer 105 for soldering with the semiconductor laser chip 101.
The metal solder 107 on the metal layer 105 is pre-deposited on the metal layer 105, and the selection of the solder is the same as the metal solder 107 on the reinforcing sheet 103, which is not described herein again.
Alternatively, there are two reinforcing sheets 103. The two reinforcing sheets are symmetrically arranged on two opposite sides of the conductive substrate 102.
The reinforcing sheets are symmetrically arranged on two opposite side surfaces of the conductive substrate, so that the compressive stress applied to the semiconductor laser chip 101 and the conductive substrate 102 in the thickness direction by the reinforcing sheets 103 is symmetrical and uniform, the packaging structure of the semiconductor laser is more stable, and the risk of cracking of the semiconductor laser chip is further reduced.
Optionally, the height of the reinforcing patch 103 in the light-emitting direction is greater than the cavity length of the semiconductor laser chip 101 and less than the height of the conductive substrate 102 in the light-emitting direction. The length of the reinforcing sheet 103 in the vertical direction of the bonding face of the chip semiconductor laser chip 101 coincides with the total thickness of the semiconductor laser chip 101 and the conductive substrate 102.
It should be noted that the size of the reinforcing sheet 103 should be such that it completely covers the thickness direction of the GS structure to ensure tensile stress relief for each semiconductor laser chip 101 in the GS structure. Because of the technology reason, the thickness direction that the size of reinforcement piece 103 can't be accurate completely covers whole GS structure can have the error of certain yardstick, and should be clear to the skilled person in the art, because the size difference that the error caused is also within the utility model discloses a protection scope. Alternatively, the material of the reinforcing patch 103 may include at least one of a metal, a ceramic, or a metal composite. In some embodiments, the metal may include iron or iron-based alloys (e.g., 410 stainless steel), nickel or nickel-based alloys (GH4169), intermetallics (Ti)3Al). The ceramic may be oxygenAluminium (Al)2O3) A ceramic. The metal matrix composite may be tungsten copper (CuW) or the like, but is not limited thereto.
Fig. 4 is a schematic structural diagram of a stacked array structure of a semiconductor laser according to an embodiment of the present invention, and fig. 5 is a cross-sectional view of a GS structure in the stacked array structure of the semiconductor laser according to another embodiment of the present invention.
Referring to fig. 4 and 5, a stacked structure of semiconductor lasers includes:
and the packaging structure of at least two semiconductor lasers. The semiconductor laser chips 101 and the conductive substrate 102 in the package structure of at least two semiconductor lasers are arranged at intervals, arranged along the stacking direction of the semiconductor laser chips 101 and the conductive substrate 102, and vertically arranged on the heat sink 104. The reinforcing patch 103 is vertically fixed on each conductive substrate 102 bonded to the semiconductor laser chip 101.
In some embodiments, the reinforcing sheet 103 and each of the conductive substrates 102 bonded to the semiconductor laser chip 101 are fixedly bonded, for example, in a stacked structure of semiconductor lasers, if the number of the semiconductor laser chips is N (N is an integer equal to or greater than 2) and there are N +1 conductive substrates 102 bonded to the semiconductor laser chip 101, the reinforcing sheet 103 is fixedly bonded to the N +1 conductive substrates 102, respectively.
Here, referring to fig. 4 and 5, an application scenario of a stacked structure of a semiconductor laser is provided, and the stacked structure of the semiconductor laser is explained.
The stacked array structure of the semiconductor laser is a three-bar structure, the semiconductor laser chip 101 is a gallium arsenide laser chip, the cavity length is 2.0mm, the ceramic substrate is a copper layer with the thickness of 1.0mm and the metal layer 105 is 30um, ceramic for packaging the DPC chip is formed, copper is coated in the conductive through hole 106, the reinforcing sheet 103 is made of copper-tungsten material, the mass fraction of the copper is 10%, the mass fraction of the tungsten is 90%, the CTE is 6.5 +/-0.5 PPM, and the metal solder 107 can be made of gold-tin solder.
In the packaging process, firstly, stacking array packaging is carried out on DPC chip packaging ceramic (comprising a ceramic substrate and a metal layer 105), a semiconductor laser chip 101 and a reinforcing sheet 103 to obtain a packaged GS structure, and then the packaged GS structure is welded on a heat sink 104 through a secondary solder 108, wherein the secondary solder 108 is SAC, and the heat sink 104 is a copper heat sink.
For example, diamond may be used to replace the ceramic substrate, and gold layer may be used to form DPC, the gan semiconductor laser chip 101 is used, the heat sink may be DBC or a multi-layer heat sink of copper and aluminum oxide, and the material of the reinforcing sheet is molybdenum metal.
Or in other application scenes, silicon carbide can be used as a material of the ceramic substrate to form a DBC with a silver layer, the gallium arsenide semiconductor laser chip 101 is used, the heat sink can be a micro-channel water-cooling heat sink, and the material of the reinforcing sheet is 410 martensitic stainless steel.
Since the stacked array structure of the semiconductor laser comprises the packaging structure of the semiconductor laser, the beneficial effects are the same as those of the stacked array structure of the semiconductor laser, and are not described again.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A package structure of a semiconductor laser, comprising:
the device comprises a semiconductor laser chip, a conductive substrate and a reinforcing sheet;
two bonding surfaces of the semiconductor laser chip are parallel to and bonded with one conductive substrate respectively;
the reinforcing sheet is fixed on the side face of the conductive substrate and parallel to the stacking direction of the semiconductor laser chip and the conductive substrate, wherein the thermal expansion coefficient of the reinforcing sheet is larger than that of the semiconductor laser chip and the conductive substrate combination.
2. The package structure of a semiconductor laser according to claim 1, wherein the conductive substrate is a ceramic substrate, a plurality of conductive vias are formed in the ceramic substrate, and two ends of each conductive via are electrically connected to the metal layer formed on the ceramic substrate;
or, the conductive substrate is a metal substrate, and an insulating layer is arranged between the metal substrate and the reinforcing sheet.
3. The package structure of a semiconductor laser as claimed in claim 2, wherein a metal solder is disposed on the stiffener, and the metal solder is used for soldering with the metal layer on the ceramic substrate.
4. A package structure for a semiconductor laser as claimed in claim 3 wherein the metal solder on the stiffener is: and the melting point of the hard solder is less than or equal to a preset melting point, and the preset melting point is the melting point of the packaging solder of the semiconductor laser chip.
5. The package structure of a semiconductor laser according to claim 1, wherein the number of the reinforcing tabs is two;
the two reinforcing pieces are symmetrically arranged on two opposite side surfaces of the conductive substrate.
6. The package structure of a semiconductor laser as claimed in any of claims 1-5 wherein the dimension of the stiffener along the light exit direction is greater than or equal to the cavity length of the semiconductor laser chip and greater than or equal to the dimension of the conductive substrate along the light exit direction.
7. The package structure of a semiconductor laser as claimed in claim 6 wherein the material of the reinforcing patch comprises at least one of a metal, a ceramic, or a metal composite.
8. A stacked array structure of semiconductor lasers, comprising at least two semiconductor laser packages according to any of claims 1-7;
semiconductor laser chips in the packaging structures of at least two semiconductor lasers and the conductive substrate are arranged at intervals and are stacked and arranged along the vertical direction of the bonding surfaces of the semiconductor laser chips and the conductive substrate;
the reinforcing pieces are parallel to the stacking direction and are arranged on two opposite side surfaces of the conductive substrate.
9. The stacked array structure of semiconductor lasers as claimed in claim 8 wherein the length of the reinforcing patch in the direction of stacking the semiconductor laser chips and the conductive substrates is greater than or equal to the distance between the two most distant conductive substrates.
10. The stacked array structure of semiconductor lasers as claimed in claim 8 further comprising: a heat sink;
the semiconductor laser chip and the conductive substrate are vertically arranged on the heat sink along the light emitting direction of the semiconductor laser chip.
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| CN110544871A (en) * | 2019-08-29 | 2019-12-06 | 西安域视光电科技有限公司 | Packaging structure and stacked array structure of semiconductor laser |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110544871A (en) * | 2019-08-29 | 2019-12-06 | 西安域视光电科技有限公司 | Packaging structure and stacked array structure of semiconductor laser |
| CN110544871B (en) * | 2019-08-29 | 2024-07-05 | 西安炬光科技股份有限公司 | Packaging structure and stacked array structure of semiconductor laser |
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