CN210074157U

CN210074157U - Millimeter wave microstrip panel antenna

Info

Publication number: CN210074157U
Application number: CN201920761722.7U
Authority: CN
Inventors: 彭立尧; 薛旦; 卞亨通; 史颂华
Original assignee: Shanghai Geometry Partner Intelligent Driving Co Ltd
Current assignee: Shanghai Geometry Partner Intelligent Driving Co Ltd
Priority date: 2019-05-24
Filing date: 2019-05-24
Publication date: 2020-02-14
Anticipated expiration: 2029-05-24

Abstract

The utility model discloses a millimeter wave microstrip panel antenna belongs to the antenna field, divide ware (D) including microstrip antenna (1), first medium base plate (S1), second medium base plate (S2), first metal level (M1), second metal level (M2), waveguide layer (2), microstrip line-waveguide transition ware (T), merit. The microstrip antenna (1) comprises N antenna units with the same structure, each antenna comprises M antenna array elements, and the M antenna array elements are distributed in a left-right alternating mode relative to a feeder line (F) and are connected with the feeder line to form a comb. The utility model discloses an antenna has realized antenna and active device's antarafacial structure, has reduced the loss and the interference of feeder, has reduced the influence of active network to the antenna, has advantages such as small, with low costs, high gain, high isolation.

Description

Millimeter wave microstrip panel antenna

Technical Field

The utility model belongs to the antenna field specifically is an used millimeter wave microstrip panel antenna of on-vehicle radar.

Background

Millimeter waves refer to electromagnetic waves with a wavelength of 1mm to 10mm, and have the characteristics of both microwaves and infrared waves because the frequency range of the electromagnetic waves is between the microwaves and the infrared waves. The millimeter wave also has its unique characteristics: the whole bandwidth is large, and the current situation that microwave wave bands are crowded can be relieved; compared with microwaves, the working wavelength of the millimeter waves is short, so that the size of the antenna is smaller; compared with infrared waves, millimeter waves have stronger penetrability and can work in more complex environments.

Compared with other antennas, microstrip antennas are widely used because of their low profile, small size, and easy conformality, and easy acquisition of circular polarization characteristics. However, microstrip antennas currently on the market have some problems: narrow frequency band, error caused by dielectric loss, small power capacity and low antenna radiation efficiency.

SUMMERY OF THE UTILITY MODEL

The technical problem solved by the utility model is to provide a millimeter wave microstrip panel antenna with high gain, low vice lamella, high, the with low costs advantage of receiving and dispatching isolation degree.

Realize the utility model discloses the technical scheme of purpose does: a millimeter wave microstrip panel antenna comprises a microstrip antenna, a first dielectric substrate, a second dielectric substrate, a first metal layer, a second metal layer, a waveguide layer, a microstrip-waveguide transition device and a power divider.

The first dielectric substrate, the first metal layer, the waveguide layer, the second metal layer and the second dielectric substrate are sequentially stacked from top to bottom, a microstrip antenna is arranged on one side of the first dielectric substrate, which is far away from the first metal layer, and a power divider is arranged on the first dielectric substrate; a grounding plate and a feeder line are arranged on one side of the second dielectric substrate far away from the second metal layer;

the microstrip line-waveguide transition device comprises a grounding plate, a second dielectric substrate, a second metal layer and a radiation patch.

The second dielectric substrate and the waveguide layer are subjected to energy transmission through the radiation patch of the microstrip line-waveguide transition device, the first dielectric substrate and the waveguide layer are subjected to energy transmission through the gap arranged on the first metal layer, and the microstrip antenna and the first dielectric substrate are subjected to energy transmission through the power divider.

Further, the microstrip antenna comprises N antenna units with the same structure.

Furthermore, N antennas in the microstrip antenna are distributed at equal intervals, and the interval is l.

Furthermore, each antenna in the microstrip antenna comprises M antenna array elements, and the M antenna array elements are distributed in a left-right alternating manner with respect to the feeder line and are connected with the feeder line to form a comb.

Further, M is odd number, M antenna elements are centered with respect to the position

The central lines of the array elements are symmetrical.

Compared with the prior art, the utility model, it is showing the advantage and is: the microstrip line-waveguide transition device is connected with the waveguide, so that the different-surface structure of the antenna and the active device is realized, the influence of an active network on the antenna is reduced, and the isolation of the antenna can be obviously improved; the power divider is designed by adopting a Substrate Integrated Waveguide (SIW) structure, so that the influence of a feeder line on the microstrip antenna is effectively reduced, and the side lobe is reduced.

Drawings

Fig. 1 is a three-dimensional perspective view of the millimeter wave microstrip patch antenna of the present invention.

Fig. 2 is a schematic cross-sectional structure diagram of the millimeter-wave microstrip patch antenna of the present invention.

Fig. 3 is a detailed structure diagram of the millimeter wave microstrip patch antenna of the present invention. The structure of the microstrip antenna (1) and the power divider (D) above the first dielectric substrate (S1), the structure of the first dielectric substrate (S1), the structure of the first metal layer (M1), the structure of the waveguide layer (2), the structure of the second metal layer (M2), the structure of the second dielectric substrate (S2), and the microstrip feed line structure below the second dielectric substrate (S2) are shown in fig. (a), in fig. (b), in fig. (c), in fig. (D).

Fig. 4 is a detailed structure diagram of the microstrip line-waveguide transition device (T) of the millimeter wave microstrip patch antenna of the present invention.

Fig. 5 is a parameter diagram of any one antenna unit of the millimeter-wave microstrip patch antenna according to the embodiment of the present invention.

Fig. 6 is a two-dimensional beam pattern of the millimeter wave microstrip patch antenna according to an embodiment of the present invention.

Detailed Description

The present invention will be described in further detail with reference to the accompanying drawings.

With reference to fig. 1 and 2, the present invention relates to a millimeter wave microstrip patch antenna, which comprises a microstrip antenna 1, a first dielectric substrate S1, a second dielectric substrate S2, a first metal layer M1, a second metal layer M2, a waveguide layer 2, a microstrip line-waveguide transition device T, and a power divider D.

With reference to fig. 3, the first dielectric substrate S1, the first metal layer M1, the waveguide layer 2, the second dielectric substrate S2, and the second metal layer M2 are sequentially stacked from top to bottom, a microstrip antenna 1 is disposed on a side of the first dielectric substrate S1 away from the first metal layer M1, and a power divider D is disposed on the first dielectric substrate S1; the ground plate G and the feed line F are disposed on the second dielectric substrate S2 on a side away from the second metal layer M2.

Referring to fig. 2, 3 and 4, the microstrip-waveguide transition T includes a ground plate G, a second dielectric substrate S2, a second metal layer M2 and a radiating patch P.

The second dielectric substrate S2 and the waveguide layer 2 perform energy transmission through the radiation patch P of the microstrip line-waveguide transition device T, the first dielectric substrate S1 and the waveguide layer 2 perform energy transmission through the slot formed on the first metal layer M1, and the microstrip antenna 1 and the first dielectric substrate S1 perform energy transmission through the power divider D.

Further, the microstrip antenna 1 includes N antenna elements having the same structure.

The central lines of the array elements are symmetrical.

Preferably, N is 4, M is 5, and l is 2mm to 2.2 mm.

Preferably, the first dielectric substrate S1 and the second dielectric substrate S2 are Rogers3003, and the thickness of the first dielectric substrate S1 and the second dielectric substrate S2 is 127 μm.

Preferably, the materials of the microstrip antenna 1, the first metal layer M1, the second metal layer M2 and the inner wall of the square hole of the waveguide layer 2 are all copper; the thickness of the microstrip antenna 1, the first metal layer M1 and the second metal layer M2 is 18 μ M, and the height of the waveguide layer 2 is 0.5 mm-2 mm.

Preferably, the diameter of each through hole of the microstrip line-waveguide transition device T is 0.15-0.3 mm, and the distance between the through holes is 0.2-0.4 mm; the diameter of the through holes of the power divider D is 0.3-0.5 mm, and the distance between the through holes is 0.5-0.7 mm.

The present invention will be described in further detail with reference to specific embodiments.

Examples

The embodiment of the utility model provides an in the center frequency of antenna be 77 GHz.

With reference to fig. 1, fig. 2 and fig. 4, the diameter of the through holes in the microstrip line-waveguide transition device T in this embodiment is 0.2mm, and the distance between the through holes is 0.33 mm. The diameter of each through hole in the power divider D is 0.4mm, and the distance between the through holes is 0.6 mm.

With reference to fig. 1, fig. 2 and fig. 5, the specific parameters of each antenna unit in the microstrip antenna 1 in this embodiment are as follows: : a1 of 1.2mm, a2 of 1.45mm, a3 of 1.1mm, b1 of 0.8mm, b2 of 0.6mm, b3 of 0.25mm, c1 of 1.2mm, c2 of 1.35mm and w of 0.205 mm.

In the embodiment, the length of the square hole of the first metal layer M1 is 1.5mm, and the width is 0.8 mm; the square hole of the second metal layer M2 had a length of 2.54mm and a width of 1.27 mm.

Referring to fig. 3e, the radiation patch P placed in the center of the square hole in the second metal layer M2 in this embodiment has a length of 2.1mm and a width of 0.9 mm.

Right the utility model discloses a microstrip antenna carries out the simulation test of receiving and dispatching antenna isolation, and the simulation result shows that, under 77 GHz's frequency, the isolation of antenna can reach 74 dB.

Referring to fig. 6, in the present embodiment, the gain of the antenna is 10dB, the 3dB beamwidth is about 20 °, the main-to-side lobe ratio is about 14dB, and the maximum side lobe level occurs at theta equal to 90 °.

To sum up, the utility model discloses an antenna has realized the different face structure of antenna and active device, has reduced the loss and the interference of feeder, has reduced the influence of active network to the antenna, and can effectively restrain vice lamella through the metal patch, has advantages such as with low costs, high gain, low vice lamella, high isolation.

The foregoing detailed description is given by way of example only, and is provided to better enable one skilled in the art to understand the patent, and is not intended to limit the scope of the patent; any modification or modification that is substantially the same or equivalent to the technical content of the technical means disclosed in the present patent is included in the scope of the present patent.

Claims

1. A millimeter wave microstrip panel antenna is characterized by comprising a microstrip antenna (1), a first dielectric substrate (S1), a second dielectric substrate (S2), a first metal layer (M1), a second metal layer (M2), a waveguide layer (2), a microstrip line-waveguide transition device (T) and a power divider (D);

the first dielectric substrate (S1), the first metal layer (M1), the waveguide layer (2), the second metal layer (M2) and the second dielectric substrate (S2) are sequentially overlapped from top to bottom, a microstrip antenna (1) is arranged on one side, far away from the first metal layer (M1), of the first dielectric substrate (S1), and a power divider (D) is arranged on the first dielectric substrate (S1); a ground plate (G) and a feed line (F) are arranged on one side of the second dielectric substrate (S2) far away from the second metal layer (M2);

the microstrip line-waveguide transition device (T) comprises a ground plate (G), a second dielectric substrate (S2), a second metal layer (M2) and a radiation patch (P);

the second dielectric substrate (S2) and the waveguide layer (2) carry out energy transmission through a radiation patch (P) of the microstrip line-waveguide transition device (T), the first dielectric substrate (S1) and the waveguide layer (2) carry out energy transmission through a gap arranged on the first metal layer (M1), and the microstrip antenna (1) and the first dielectric substrate (S1) carry out energy transmission through the power divider (D).

2. A millimeter-wave microstrip panel antenna according to claim 1, wherein said microstrip antenna (1) has N antenna elements of the same structure.

3. The millimeter wave microstrip panel antenna according to claim 2, wherein N antennas of the microstrip antenna (1) are equally spaced, and the spacing is l.

4. A millimeter wave microstrip panel antenna according to claim 3, wherein each antenna of the microstrip antenna (1) comprises M antenna elements, and the M antenna elements are distributed in a left-right alternating manner with respect to the feeder line and connected to the feeder line in a comb shape.

5. The millimeter wave microstrip panel antenna according to claim 4, wherein M is an odd number, and M antenna elements are centered with respect to the second of the positions

The central lines of the array elements are symmetrical.

6. The millimeter wave microstrip panel antenna according to claim 2, 3 or 5, wherein N-4, M-5, and l-2 mm to 2.2 mm.

7. The millimeter wave microstrip panel antenna according to claim 1, wherein the dielectric constant of the first dielectric substrate (S1) and the dielectric constant of the second dielectric substrate (S2) are 3.04, and the thickness of the first dielectric substrate and the second dielectric substrate is 127 μm.

8. The millimeter wave microstrip panel antenna according to claim 1, wherein the microstrip antenna (1), the first metal layer (M1), the second metal layer (M2) and the inner wall of the square hole of the waveguide layer (2) are all made of copper; the thickness of the microstrip antenna (1), the first metal layer (M1) and the second metal layer (M2) is 18 microns, and the height of the waveguide layer (2) is 0.5 mm-2 mm.

9. The millimeter wave microstrip panel antenna according to claim 1, wherein the diameter of the through holes of the microstrip line-waveguide transition device (T) is 0.15-0.3 mm, and the distance between the through holes is 0.2-0.4 mm; the diameter of the through holes of the power divider (D) is 0.3-0.5 mm, and the distance between the through holes is 0.5-0.7 mm.