CN210073864U

CN210073864U - Field-effect tube with shock-absorbing structure

Info

Publication number: CN210073864U
Application number: CN201921277202.5U
Authority: CN
Inventors: 覃尚育; 邹荣涛; 胡云峰
Original assignee: SHENZHEN JINYU SEMICONDUCTOR CO Ltd
Current assignee: SHENZHEN JINYU SEMICONDUCTOR CO Ltd
Priority date: 2019-08-05
Filing date: 2019-08-05
Publication date: 2020-02-14
Anticipated expiration: 2029-08-05

Abstract

The utility model provides a field effect transistor with a shock-absorbing structure, which relates to the technical field of field effect transistors, and comprises a bottom plate, wherein the top of the bottom plate is provided with a field effect transistor body, the side wall of the field effect transistor body is fixed with a connecting block, one side of the connecting block, which is far away from the field effect transistor body, is connected with a pin, the outer wall of the field effect transistor body is covered with a rubber shell, and the bottom of the rubber shell is connected with the bottom of the bottom plate, the field effect transistor with the shock-absorbing structure can buffer the impact force in a deformation mode, simultaneously, the buffer layer shares the impact force to the periphery, reduces the force when the impact force is transmitted to the field effect transistor body, effectively plays the role of buffering and shock absorption for the field effect transistor body, prolongs the service life of the device, and the heat dissipation plate can swing, the flow of the air around the radiator is accelerated, and the heat dissipation is further accelerated.

Description

Field-effect tube with shock-absorbing structure

Technical Field

The utility model relates to a field effect transistor technical field specifically is a field effect transistor with shock-absorbing structure.

Background

The field effect transistor with the damping structure has the damping and buffering functions, but the structure is more and complicated, the occupied space of the field effect transistor is increased, the mounting difficulty is improved, and a shell of a comparison file is easy to damage when the external physical impact area is small, so that the durability of the device is influenced.

SUMMERY OF THE UTILITY MODEL

The utility model provides a not enough to prior art, the utility model provides a field effect transistor with shock-absorbing structure has solved the more and loaded down with trivial details of comparison file structure, has increased field effect transistor's occupation space, improves the degree of difficulty of installation, and the casing of comparison file is fragile when outside physical impact area, influences the problem of device durability.

In order to achieve the above object, the utility model provides a following technical scheme: the utility model provides a field effect transistor with shock-absorbing structure, includes the bottom plate, rubber housing is installed at the top of bottom plate, the field effect transistor body is installed to rubber housing's inner wall bottom, the lateral wall of field effect transistor body is fixed with the connecting block, one side that the field effect transistor body was kept away from to the connecting block is connected with the pin, it has the buffer layer to fill between rubber housing and the field effect transistor body, the lateral wall of bottom plate is connected with the fixed plate, and the inside of fixed plate has seted up the mounting hole, the side channel has been seted up to the both sides.

Furthermore, a heat dissipation channel is formed in the buffer layer and extends to the outside of the rubber shell, and a cavity connected with the heat dissipation channel is formed in one side, close to the field effect tube body, of the buffer layer.

Furthermore, the top of the rubber shell is movably connected with three bendable heat dissipation plates, the bottoms of the heat dissipation plates are connected with heat conducting wires, and the bottoms of the heat conducting wires are connected with the top of the field effect tube body.

Furthermore, a notch is formed in the top of the rubber shell and is matched with the heat dissipation plate.

Furthermore, elastic supporting blocks are fixed at the top of the rubber shell and positioned on two sides of the heat dissipation plate, and the side walls of the supporting blocks are abutted against the heat dissipation plate.

Compared with the prior art, the beneficial effects of the utility model are that:

(1) this field effect transistor with shock-absorbing structure, simple structure is small and exquisite, and the mode that rubber housing accessible warp cushions the shaking force, and the buffer layer simultaneously with the impact force to sharing all around, dynamics when having reduced the impact force and transmitting to the field effect transistor body has effectually played the effect of buffering absorbing to the field effect transistor body, the life of extension fixture, the problem of the easy field effect transistor of vibration is solved.

(2) This field effect transistor with shock-absorbing structure, the heat conduction silk can be dispelled the heat with the heat direction heating panel of field effect transistor body lateral wall, and when the device received the vibration, the heating panel can the round trip movement under the elastic piece of support of both sides supported, accelerates its surrounding air's flow, can improve the rate of heat dissipation.

Drawings

FIG. 1 is a schematic view of the internal structure of the rubber casing of the present invention;

FIG. 2 is an external view of the present invention;

fig. 3 is a schematic structural view of the fixing plate of the present invention;

in the figure: the field effect transistor comprises a base plate 1, a field effect transistor body 2, a connecting block 3, pins 4, a rubber shell 5, a buffer layer 6, a heat dissipation plate 7, a heat conduction wire 8, a notch 9, a support block 10, heat dissipation holes 11, a cavity 12, a fixing plate 13, mounting holes 14 and side grooves 15.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.

Referring to fig. 1-3, the present invention provides a technical solution: a field effect transistor with a damping structure comprises a bottom plate 1, a rubber shell 5 is installed at the top of the bottom plate 1, a field effect transistor body 2 is fixed at the bottom of the inner wall of the rubber shell 5, a connecting block 3 is fixed on the side wall of the field effect transistor body 2, one side, far away from the field effect transistor body 2, of the connecting block 3 is connected with a pin 4, the rubber shell 5 is arranged between the field effect transistor body 2 and the bottom plate 1 and can buffer vibration transmitted from the bottom plate 1 to the field effect transistor body 2, a buffer layer 6 is filled between the rubber shell 5 and the field effect transistor body 2, the side wall of the bottom plate 1 is connected with a fixing plate 13, a mounting hole 14 is formed in the fixing plate 13, side grooves 15 are formed in two sides of the fixing plate 13, the device can be conveniently fixed on a circuit board through the mounting hole 14 and the side grooves 15 on the fixing plate 13, meanwhile, the buffer layer shares the impact force all around, the force when the impact force is transmitted to the field effect tube body 2 is reduced, the effect of buffering and damping is effectively achieved on the field effect tube body 2, and the durability of the field effect tube is improved.

In order to facilitate heat dissipation of the fet, in this embodiment, preferably, the buffer layer 6 is provided with a heat dissipation channel 12 inside, the heat dissipation channel extends to the outside of the rubber housing 5, and one side of the buffer layer 6 close to the fet body 2 is provided with a cavity 11 connected to the heat dissipation channel 12.

In order to improve the heat dissipation performance of the fet, in this embodiment, preferably, three bendable heat dissipation plates 7 are movably connected to the top of the rubber housing 5, the bottom of the heat dissipation plate 7 is connected with a heat conducting wire 8, the bottom of the heat conducting wire 8 is connected to the top of the fet body 2, and the heat conducting wire 8 can guide the heat on the side wall of the fet body 2 to the heat dissipation plate 7 for heat dissipation.

In order to increase the contact area between the heat dissipation plate 7 and the rubber housing 5, in the embodiment, it is preferable that a notch 9 is formed at the top of the rubber housing 5, and the notch 9 is adapted to the heat dissipation plate 7.

In order to ensure the swinging of the heat dissipation plate 7, in the embodiment, preferably, elastic abutting blocks 10 are fixed on the top of the rubber housing 5 and located on both sides of the heat dissipation plate 7, the side walls of the abutting blocks 10 abut against the heat dissipation plate 7, and the heat dissipation plate 7 and the rubber housing 5 are perpendicular to each other.

The utility model discloses a theory of operation and use flow: when the utility model is used, the mounting hole 14 and the side groove 15 on the fixing plate 13 are convenient to fix the device on a circuit board, when the device is impacted by physics, the rubber shell 5 can buffer the impact force in a deformation mode, simultaneously, the buffer layer 6 shares the impact force to the periphery, the force when the impact force is transmitted to the field effect tube body 2 is reduced, the buffer and shock absorption effects are effectively realized on the field effect tube body 2, when the device is extruded, the cavity 11 can extrude the hot air around the field effect tube body 2 when being flattened, the cavity 11 can absorb the cold air outside when recovering the original shape, the heat dissipation is accelerated, the heat conducting wire 8 can guide the heat of the side wall of the field effect tube body 2 to the heat dissipation plate 7 for heat dissipation, when the device is vibrated, the heat dissipation plate 7 can swing back and forth under the contact of the elastic support blocks 10 at both sides, the flow of the air around the heat, further accelerating heat dissipation.

Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.

Claims

1. The utility model provides a field effect transistor with shock-absorbing structure, its characterized in that, includes the bottom plate, rubber housing is installed at the top of bottom plate, rubber housing's inner wall bottom is fixed with the field effect transistor body, the lateral wall of field effect transistor body is fixed with the connecting block, one side that the field effect transistor body was kept away from to the connecting block is connected with the pin, it has the buffer layer to fill between rubber housing and the field effect transistor body, the lateral wall of bottom plate is connected with the fixed plate, and the inside of fixed plate has seted up the mounting hole, the side channel has been seted up to the both sides.

2. The fet with a shock absorbing structure of claim 1, wherein: the buffer layer is provided with a heat dissipation channel inside, the heat dissipation channel extends to the outside of the rubber shell, and one side of the buffer layer close to the field effect transistor body is provided with a cavity connected with the heat dissipation channel.

3. The fet with a shock absorbing structure of claim 1, wherein: the top of the rubber shell is movably connected with three bendable heat dissipation plates, the bottoms of the heat dissipation plates are connected with heat conducting wires, and the bottoms of the heat conducting wires are connected with the top of the field effect tube body.

4. The FET with a shock absorbing structure of claim 3, wherein: the top of the rubber shell is provided with a notch, and the notch is matched with the heat dissipation plate.

5. The FET with a shock absorbing structure of claim 3, wherein: elastic supporting blocks are fixed at the top of the rubber shell and positioned on two sides of the heat dissipation plate, and the side walls of the supporting blocks are abutted against the heat dissipation plate.