CN212810288U

CN212810288U - High-performance ESD transistor

Info

Publication number: CN212810288U
Application number: CN202022052583.6U
Authority: CN
Inventors: 刘志强; 龙立; 王来营; 吴秀明; 王升龙
Original assignee: Reasunos Semiconductor Technology Co ltd
Current assignee: Ruisen semiconductor technology (Guangdong) Co.,Ltd.
Priority date: 2020-09-17
Filing date: 2020-09-17
Publication date: 2021-03-26
Anticipated expiration: 2030-09-17

Abstract

The utility model relates to a high-performance ESD transistor, which comprises a protective shell, an ESD transistor body and a fixed base, wherein a mounting groove is arranged in the protective shell, a fixed groove is arranged in the fixed base, a spring is fixed in the fixed groove, a buckle is fixed at the other end of a baffle, the buckle is matched with the clamping groove, a pin is fixed below the fixed base, a chute is arranged in the fixed base, the chute is arranged at the position of the fixed groove, a slide block is fixed in the chute, the slide block is connected with one end of the baffle, the high-performance ESD transistor has good heat dissipation performance, the ESD transistor and a heat dissipation device in the protective shell are convenient to install and have good heat dissipation effect, the fixed base is fixed on a circuit board when in use, and the replacement of a new ESD transistor can be completed only by replacing the protective shell assembled with the ESD transistor, the use is convenient and simple.

Description

High-performance ESD transistor

Technical Field

The utility model relates to a transistor equipment technical field specifically is a high performance ESD transistor.

Background

As is well known, an existing ESD transistor is an auxiliary device for a transistor device, which is widely used in the field of transistor device technology.

For example, the patent publication "CN 208622706U" is named as: the patent of "a new kind of high performance ESD transistor structure", the patent discloses "the utility model discloses a new kind of high performance ESD transistor structure, it relates to the technical field of transistor equipment; the heat dissipation structure comprises an outer shell, an ESD transistor body, a fixing frame, a plurality of longitudinal radiating tubes, a plurality of transverse radiating tubes and an insulation pad, wherein a mounting groove is formed in the outer shell, the ESD transistor body is arranged in the mounting groove, the two corners of the bottom of the ESD transistor body are fixedly provided with the fixing frame, the lower end of the fixing frame is fixedly arranged on a fixing plate body, the two ends of the fixing plate body are fixedly arranged on the inner side wall of the outer shell, the bottom of the ESD transistor body is fixedly provided with a radiating block, the lower end of the radiating block is fixedly provided with the plurality of longitudinal radiating tubes, the plurality of longitudinal radiating tubes are; the utility model can improve the strength and the heat dissipation performance, and adopts a natural heat dissipation mode during heat dissipation, thereby having few heat dissipation devices and high heat dissipation performance; can prolong the service life, is simple and convenient to operate and can save time.

The existing novel high-performance ESD transistor structure is found in use, the ESD transistor is fixed and unstable, a radiating pipe is inconvenient to mount in a large number, the device is difficult to dismount, and the use limitation is high due to inconvenient assembly.

SUMMERY OF THE UTILITY MODEL

Technical problem to be solved

Not enough to prior art, the utility model provides a convenient dismantlement, high performance ESD transistor.

(II) technical scheme

In order to achieve the above object, the utility model provides a following technical scheme: a high-performance ESD transistor comprises a protective shell, an ESD transistor body and a fixed base, wherein a mounting groove is formed in the protective shell, the ESD transistor body is arranged in the mounting groove, one end of the ESD transistor body is connected with one end of a connecting rod, the other end of the connecting rod is fixedly provided with a connecting electrode, an insulating filler is fixedly arranged between the connecting electrode and the ESD transistor body, a partition plate is fixedly arranged in the protective shell and is arranged at the other end of the ESD transistor body, the other end of the ESD transistor body is connected with a heat dissipation plate, the partition plate is arranged on the periphery side of the heat dissipation plate, a first heat dissipation hole is arranged below the protective shell, a clamping groove is fixedly arranged below the outer side of the protective shell, an assembly groove is formed in the fixed base, the protective shell is matched with the assembly groove, and a fastening device is fixedly arranged in the assembly groove, the fixing device comprises a spring, an articulated shaft, a baffle and a buckle, the articulated shaft is fixed in the middle of the baffle, the articulated shaft is articulated with the fixing base, the spring is fixed at one end of the baffle, a fixing groove is formed in the fixing base, the spring is fixed in the fixing groove, the buckle is fixed at the other end of the baffle, the buckle is matched with the clamping groove, pins are fixed below the fixing base, a sliding groove is formed in the fixing base, the sliding groove is formed in the position of the fixing groove in a matched mode, a sliding block is fixed in the sliding groove, and the sliding block is connected with one end of the baffle.

For the convenience is fixed firm to protective housing, the utility model discloses the improvement has, the draw-in groove with fastener sets up to two sets of, the draw-in groove with fastener symmetrical arrangement.

In order to prevent the slider roll-off, conveniently utilize the slider to carry out protective housing's replacement with the fastener unblock simultaneously, the utility model discloses the improvement has, the slider is the big little trapezium structure of one end, the little one end of slider extends to outside the unable adjustment base.

In order to improve the buffering shock attenuation effect in the protective housing, the utility model discloses the improvement has, the baffle both sides are fixed with the blotter.

In order to facilitate production and manufacture, the utility model discloses the improvement has, the blotter material is silica gel or rubber.

For the convenience dispels the heat to ESD transistor body, the utility model discloses the improvement has, the last second louvre that is provided with of unable adjustment base, the second louvre with first louvre position phase-match.

(III) advantageous effects

Compared with the prior art, the utility model provides a high performance ESD transistor possesses following beneficial effect:

this high performance ESD transistor has good heat dispersion, ESD transistor and heat abstractor simple to operate in the protective housing, and the radiating effect is good, fixes unable adjustment base on the circuit board when using, only need to change the protective housing who has assembled the ESD transistor and just can accomplish the replacement of new ESD transistor, and convenient to use is simple.

Drawings

FIG. 1 is a front view of the present invention;

FIG. 2 is a top view of the interior of the structural protective shell of the present invention;

FIG. 3 is a front view of the protective housing of the present invention;

fig. 4 is a cross-sectional view of the fixing base of the present invention.

In the figure: 1. a protective housing; 2. an ESD transistor body; 3. a fixed base; 4. mounting grooves; 5. a connecting rod; 6. connecting the electrodes; 7. an insulating filler; 8. a partition plate; 9. a heat dissipation plate; 10. a first heat dissipation hole; 11. a card slot; 12. assembling a groove; 13. a fastening device; 14. a spring; 15. hinging a shaft; 16. a baffle plate; 17. buckling; 18. fixing grooves; 19. a pin; 20. a chute; 21. a slider; 22. a cushion pad; 23. a second heat dissipation hole.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.

Referring to fig. 1-4, a high performance ESD transistor includes a protective housing 1, an ESD transistor body 2 and a fixed base 3, wherein a mounting groove 4 is formed in the protective housing 1, the ESD transistor body 2 is disposed in the mounting groove 4, one end of the ESD transistor body 2 is connected to one end of a connecting rod 5, the other end of the connecting rod 5 is fixed with a connecting electrode 6, an insulating filler 7 is fixed between the connecting electrode 6 and the ESD transistor body 2, a partition 8 is fixed in the protective housing 1, the partition 8 is disposed at the other end of the ESD transistor body 2, the other end of the ESD transistor body 2 is connected to a heat dissipation plate 9, the partition 8 is disposed around the heat dissipation plate 9, a first heat dissipation hole 10 is disposed below the protective housing 1, and a clamping groove 11 is fixed below the outer side of the protective housing 1, an assembly groove 12 is arranged in the fixed base 3, the protective shell 1 is matched with the assembly groove 12, a fastening device 13 is fixed in the assembly groove 12, the fastening device 13 is matched with the clamping groove 11, the fastening device 13 comprises a spring 14, an articulated shaft 15, a baffle 16 and a buckle 17, the articulated shaft 15 is fixed in the middle of the baffle 16, the articulated shaft 15 is articulated with the fixed base 3, the spring 14 is fixed at one end of the baffle 16, a fixed groove 18 is arranged in the fixed base 3, the spring 14 is fixed in the fixed groove 18, the buckle 17 is fixed at the other end of the baffle 16, the buckle 17 is matched with the clamping groove 11, pins 19 are fixed below the fixed base 3, a sliding groove 20 is arranged in the fixed base 3, the sliding groove 20 is arranged at the position of the fixed groove 18, and a sliding block 21 is fixed in the sliding groove 20, the slider 21 is connected to one end of the baffle 16.

The clamping grooves 11 and the fastening devices 13 are arranged in two groups, and the clamping grooves 11 and the fastening devices 13 are symmetrically arranged, so that the protective shell 1 is fixed and stable conveniently.

Slider 21 is the big little trapezium structure of one end, the little one end of slider 21 extends to outside unable adjustment base 3, in order to prevent slider 21 roll-off, conveniently utilize slider 21 to carry out the replacement of protective housing 1 with fastener 13 unblock simultaneously.

Cushions 22 are fixed on two sides of the partition plate 8, and the cushion effect in the protective shell 1 is improved.

The cushion pad 22 is made of silica gel or rubber, so that the production and the manufacture are convenient.

The fixed base 3 is provided with a second heat dissipation hole 23, and the second heat dissipation hole 23 is matched with the first heat dissipation hole 10 in position, so that the ESD transistor body 2 can be conveniently dissipated.

In summary, in the high performance ESD transistor, when in use, the ESD transistor body 2 is fixed in the mounting groove 4 in the protection housing 1, the partition 8 is fixed in the mounting groove 4, the buffer pad 22 is fixed on the partition 8, so as to improve the damping and buffering effect in the protection housing 1, the ESD transistor body 2 is connected with the connecting rod 5, the connecting electrode 6 is fixed on the connecting rod 5, the first heat dissipation hole 10 is fixed under the protection housing 1, the clamping grooves 11 are fixed on both sides of the protection housing 1, the fixing base 3 is provided with the assembling groove 12, the fastening device 13 is fixed on both sides under the assembling groove 12, the fastening device 13 is composed of the baffle 16, the hinge shaft 15, the buckle 17 and the spring 14, the fixing groove 18 is arranged in the fixing base 3, the spring 14 is fixed in the fixing groove 18, the spring 14 is connected with one end of the baffle 16, the baffle 16 is hinged on the fixing base 3 through the hinge shaft, the other end of baffle 16 is fixed with buckle 17, buckle 17 and draw-in groove 11 phase-match, die protective housing 1 at assembly groove 12 internal lock, set up spout 20 in unable adjustment base 3 both sides, be provided with slider 21 in the spout 20, can be with fastener 13 unblock through extrusion slider 21, be fixed with pin 19 in unable adjustment base 3 below, only need to fix unable adjustment base 3 and change protective housing 1 that needs to be changed on the circuit board just when using, the fixed second louvre 23 in unable adjustment base 3 below and the first louvre 10 phase-match of protective housing 1 below.

Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.

Claims

1. A high performance ESD transistor, includes protective housing (1), ESD transistor body (2) and unable adjustment base (3), its characterized in that: the protective shell (1) is internally provided with a mounting groove (4), the ESD transistor body (2) is arranged in the mounting groove (4), one end of the ESD transistor body (2) is connected with one end of a connecting rod (5), the other end of the connecting rod (5) is fixed with a connecting electrode (6), an insulating filler (7) is fixed between the connecting electrode (6) and the ESD transistor body (2), a partition plate (8) is fixed in the protective shell (1), the partition plate (8) is arranged at the other end of the ESD transistor body (2), the other end of the ESD transistor body (2) is connected with a heat dissipation plate (9), the partition plate (8) is arranged on the periphery of the heat dissipation plate (9), a first heat dissipation hole (10) is arranged below the protective shell (1), and a clamping groove (11) is fixed below the outer side of the protective shell (1), an assembly groove (12) is formed in the fixed base (3), the protective shell (1) is matched with the assembly groove (12), a fastening device (13) is fixed in the assembly groove (12), the fastening device (13) is matched with the clamping groove (11), the fastening device (13) comprises a spring (14), an articulated shaft (15), a baffle (16) and a buckle (17), the articulated shaft (15) is fixed in the middle of the baffle (16), the articulated shaft (15) is articulated with the fixed base (3), the spring (14) is fixed at one end of the baffle (16), a fixed groove (18) is formed in the fixed base (3), the spring (14) is fixed in the fixed groove (18), the buckle (17) is fixed at the other end of the baffle (16), the buckle (17) is matched with the clamping groove (11), a pin (19) is fixed below the fixed base (3), a sliding groove (20) is formed in the fixed base (3), the sliding groove (20) is formed in the position, matched with the position of the fixed groove (18), a sliding block (21) is fixed in the sliding groove (20), and the sliding block (21) is connected with one end of the baffle (16).

2. A high performance ESD transistor according to claim 1, wherein: the clamping grooves (11) and the fastening devices (13) are arranged in two groups, and the clamping grooves (11) and the fastening devices (13) are symmetrically arranged.

3. A high performance ESD transistor according to claim 1, wherein: the sliding block (21) is of a trapezoidal structure with one large end and one small end, and the small end of the sliding block (21) extends out of the fixed base (3).

4. A high performance ESD transistor according to claim 1, wherein: and buffer cushions (22) are fixed on two sides of the partition board (8).

5. A high performance ESD transistor according to claim 4, wherein: the buffer pad (22) is made of silica gel or rubber.

6. A high performance ESD transistor according to claim 1, wherein: and a second heat dissipation hole (23) is formed in the fixed base (3), and the position of the second heat dissipation hole (23) is matched with that of the first heat dissipation hole (10).