CN210073789U - Device for assisting etching by utilizing interference light irradiation - Google Patents
Device for assisting etching by utilizing interference light irradiation Download PDFInfo
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- CN210073789U CN210073789U CN201921397063.XU CN201921397063U CN210073789U CN 210073789 U CN210073789 U CN 210073789U CN 201921397063 U CN201921397063 U CN 201921397063U CN 210073789 U CN210073789 U CN 210073789U
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Abstract
The utility model relates to a device for assisting etching by utilizing interference light irradiation, which comprises a base, a six-degree-of-freedom platform, a reaction isolation cavity, a stirrer and an etching liquid container; the six-degree-of-freedom platform is arranged at the bottom of the base, and the reaction isolation cavity is arranged at the top of the base; the etching liquid container is arranged in the reaction isolation cavity, and the stirrer extends into the etching liquid container from the top of the reaction isolation cavity; the bottom opening of the etching liquid container is used for fixing a sample to be processed; the six-degree-of-freedom platform carries a light source, light path through holes are formed in the bottoms of the base and the reaction isolation cavity, and an optical filter is arranged in the light path through hole of the reaction isolation cavity. The six-degree-of-freedom flat driving irradiation light source can realize periodic swinging and rotation, so that uniform interference fringes can be used for compensating irradiation on the back of the sample to be processed, and the sample to be processed is guided to be etched to form a micro-nano structure with controllable geometric dimension and height.
Description
Technical Field
The utility model relates to a semiconductor material sculpture technical field, concretely relates to utilize device of supplementary sculpture of interference light irradiation.
Background
Common methods for micromachining semiconductor materials include: dry etching, laser processing and wet etching. Dry etching processes semiconductor materials using reactive gases. The common process has the advantages of high processing precision, high equipment cost, high maintenance cost and slower processing speed, such as Reactive Ion Etching (RIE). The laser processing usually uses ultrafast lasers such as femtosecond laser or picosecond laser to process semiconductor materials, has the advantages of high processing speed, low equipment cost, no need of pre-manufacturing a mask and the like, and has the defects of high structural difficulty of submicron or nanometer size in laser processing and easy generation of a heat affected zone in the processing process. Therefore, wet etching, such as Metal Assisted Chemical Etching (MACE), is a new option for fine processing of semiconductor materials. The conventional process flow of metal-assisted chemical etching comprises: firstly, plating a metal catalyst layer on the surface of a sample by photoetching development, electron beam coating and other modes on a semiconductor material according to processing requirements; then, the sample is soaked in the etching solution, so that the semiconductor part in contact with the metal catalytic layer is dissolved due to chemical reaction, and the part which is not dissolved is reserved, thereby obtaining the target microstructure. For narrow bandgap semiconductor materials such as silicon, gallium arsenide and the like, the metal-assisted chemical reaction method can be easily realized; however, for wide bandgap semiconductor materials such as silicon carbide and silicon nitride, since chemical reaction is difficult to proceed, processing is usually difficult to be realized by conventional metal-assisted chemical etching methods, and a new processing method is needed.
Light assisted etching is used for processing porous silicon (chinese patent CN201120406111.4), porous gallium nitride (Lu, H,1997), and the like. After the surface of the semiconductor material absorbs photons, holes required for etching the semiconductor are generated, so that chemical reaction is carried out, and the dissolution and removal of the material are realized. The conventional illumination-assisted etching has the defects that disordered micropore arrays can be only processed on semiconductor materials, the micro-nano structure cannot be accurately controlled, and a new method is required to be provided for improving illumination-assisted etching to obtain the micro-nano structure with controllable morphology.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to the weak point among the prior art, provide a receive the device of the supplementary sculpture of interference light irradiation of highly controllable utilization of structure size a little.
To achieve the purpose, the utility model adopts the following technical proposal:
a device for assisting etching by utilizing interference light irradiation comprises a base, a six-degree-of-freedom platform, a reaction isolation cavity, a stirrer and an etching liquid container; the six-degree-of-freedom platform is arranged at the bottom of the base, and the reaction isolation cavity is arranged at the top of the base; the etching liquid container is arranged in the reaction isolation cavity, and the stirrer extends into the etching liquid container from the top of the reaction isolation cavity; the bottom opening of the etching liquid container is used for fixing a sample to be processed; the six-degree-of-freedom platform carries a light source, the bottoms of the base and the reaction isolation cavity are provided with light path through holes, and an optical filter is arranged in the light path through hole of the reaction isolation cavity; and light emitted by the light source sequentially penetrates through the base and the reaction isolation cavity from the bottom of the base to irradiate on the sample to be processed at the bottom of the etching liquid container and form interference fringes.
Further, the etching solution container also comprises a locking device, wherein the locking device comprises a locking device upper cover plate, a locking device lower cover plate and a locking bolt, and the etching solution container is fixed between the locking device upper cover plate and the locking device lower cover plate; a lower cover plate accommodating groove is formed in the inner side of the bottom of the reaction isolation cavity, and a lower cover plate of the locking device is arranged in the lower cover plate accommodating groove; a container accommodating groove is formed in the middle of the lower cover plate of the locking device, and the bottom of the etching liquid container is arranged in the container accommodating groove; a container through hole is formed in the middle of the upper cover plate of the locking device, and step-shaped protrusions matched with the side walls of the etching liquid container are arranged at the bottom of the container through hole; the etching liquid container penetrates through the container through hole and is inserted into the container accommodating groove; and the upper cover plate of the tightening device and the lower cover plate of the locking device are locked and fixed through locking bolts.
Further, the container comprises a sealing upper rubber block and a sealing lower rubber block, wherein the sealing upper rubber block and the sealing lower rubber block are arranged in the container accommodating groove; the sealing gluing block is arranged at the bottom of the etching liquid container, and the middle part of the sealing gluing block is provided with a hole and is communicated with the bottom of the etching liquid container; the middle part of the lower sealing rubber block and the middle part of the container accommodating groove are both provided with light path through holes; the surface of the sealing upper rubber block opposite to the surface of the sealing lower rubber block is provided with a groove, the upper groove and the lower groove are buckled to form a containing cavity used for containing a sample to be processed, and the sample to be processed is clamped and fixed in the containing cavity between the sealing upper rubber block and the sealing lower rubber block.
Further, the reaction isolation cavity is provided with an air inlet and an air outlet, the air inlet is arranged at the bottom of one side of the reaction isolation cavity, and the air outlet is arranged at the top of one side of the reaction isolation cavity opposite to the air inlet.
In a further description, a stirring bracket is arranged at the top of the reaction isolation cavity; the stirring support is of a hollow structure, the bottom of the stirring support is of a cylindrical structure, and the stirring support is fixed to the top of the reaction isolation cavity.
In a further description, the reaction isolation cavity comprises a cavity body and a cover body, and the cover body is buckled on the cavity body to form a closed space; the top of lid is equipped with the chamber lid handle, the chamber lid handle sets up the both sides at lid top.
The utility model has the advantages that: the six-degree-of-freedom platform freely adjusts the incident direction of the light source, and the light source filters light through the optical filter and selectively transmits auxiliary light. The stirrer rotates at a rotation speed of 10-1000 rpm, so that the etching liquid and the sample to be processed fully react. The six-degree-of-freedom platform drives the light source to move up and down, the maximum value of the irradiation distance can be 100mm, the minimum value of the irradiation distance can be 5mm, the irradiation light source can be driven to periodically swing and rotate, the back of the sample to be processed is subjected to compensation irradiation by uniform interference fringes, and the sample to be processed is guided to be etched to form a micro-nano structure with the controllable geometric dimension and height.
Drawings
The present invention will be further explained with reference to the drawings and examples.
Fig. 1 is a schematic overall structure diagram of an embodiment of the present invention;
fig. 2 is a partial schematic structural view of an embodiment of the present invention;
fig. 3 is a schematic diagram of etching a sample to be processed according to an embodiment of the present invention;
fig. 4 is a schematic diagram of an initial etching of a sample to be processed in an embodiment of the invention;
fig. 5 is a schematic diagram of moving the irradiation position to S1 to etch a sample to be processed according to an embodiment of the present invention;
fig. 6 is a schematic diagram of moving the irradiation position to S2 to etch a sample to be processed according to an embodiment of the present invention;
wherein: the device comprises a base 1, a six-degree-of-freedom platform 2, a reaction isolation cavity 3, a lower cover plate accommodating groove 31, an air inlet 32, an air outlet 33, a cavity cover handle 34, an optical filter 35, a cavity 301, a cover body 302, a stirrer 4, an etching liquid container 5, a locking device 6, a locking device upper cover plate 61, a locking device lower cover plate 62, a container accommodating groove 621, a locking bolt 63, a sealing upper rubber block 71, a sealing lower rubber block 72, a stirring support 8, a to-be-processed sample 01, illumination 02, interference fringes 03, a metal catalyst layer 04, etching liquid 05 and a micro-nano structure 06.
Detailed Description
The technical solution of the present invention is further explained by the following embodiments with reference to the accompanying drawings.
As shown in fig. 1-6, a device for assisting etching by using interference light 02 irradiation comprises a base 1, a six-degree-of-freedom platform 2, a reaction isolation cavity 3, a stirrer 4 and an etching liquid 05 container 5; the six-degree-of-freedom platform 2 is arranged at the bottom of the base 1, and the reaction isolation cavity 3 is arranged at the top of the base 1; the etching solution 05 container 5 is arranged in the reaction isolation cavity 3, and the stirrer 4 extends into the etching solution 05 container 5 from the top of the reaction isolation cavity 3; the bottom of the etching liquid 05 container 5 is provided with an opening, and a to-be-processed sample 01 is fixed at the opening at the bottom of the etching liquid 05 container 5; the six-degree-of-freedom platform 2 carries a light source, light path through holes are formed in the bottoms of the base 1 and the reaction isolation cavity 3, and an optical filter 35 is arranged in the light path through hole of the reaction isolation cavity 3; the light emitted by the light source sequentially penetrates through the base 1 and the reaction isolation cavity 3 from the bottom of the base 1 to irradiate the sample 01 to be processed at the bottom of the etching solution 05 container 5 and form interference fringes 03.
The six-degree-of-freedom platform 2 freely adjusts the incident direction of the light source, and the light source is filtered by the optical filter 35 and selectively transmits the auxiliary light 02. The stirrer 4 rotates at a rotation speed of 10-1000 rpm, so that the etching solution 05 and the sample 01 to be processed fully react. The six-degree-of-freedom platform 2 drives the light source to move up and down, the maximum value of the irradiation distance can be 100mm, the minimum value of the irradiation distance can be 5mm, the irradiation light source can be driven to periodically swing and rotate, the back of the to-be-processed sample 01 is subjected to compensation irradiation by the uniform interference fringes 03, and therefore the to-be-processed sample 01 is guided to be etched to form the micro-nano structure 06 with the controllable geometric dimension and height. Preferably, the area of the optical filter 35 is larger than that of the sample 01 to be processed, so that the back surface of the sample 01 to be processed can be sufficiently irradiated.
Further, the etching device comprises a locking device 6, wherein the locking device 6 comprises a locking device upper cover plate 61, a locking device lower cover plate 62 and a locking bolt 63, and the etching liquid 05 container 5 is fixed between the locking device upper cover plate 61 and the locking device lower cover plate 62; a lower cover plate accommodating groove 31 is formed in the inner side of the bottom of the reaction isolation cavity 3, and the locking device lower cover plate 62 is arranged in the lower cover plate accommodating groove 31; a container accommodating groove 621 is formed in the middle of the lower cover plate 62 of the locking device, and the bottom of the etching solution 05 container 5 is arranged in the container accommodating groove 621; a container through hole is formed in the middle of the upper cover plate 61 of the locking device, and step-shaped protrusions matched with the side walls of the etching liquid 05 container 5 are formed in the bottom of the container through hole; the etching liquid 05 container 5 penetrates through the container through hole and is inserted into the container accommodating groove 621; the upper cover plate of the tightening device and the lower cover plate 62 of the locking device are locked and fixed through a locking bolt 63.
The stirrer 4 vibrates during operation, and therefore, the etching liquid 05 container 5 needs to be firmly fixed. The upper cover plate of the tightening device and the lower cover plate 62 of the locking device clamp the etching solution 05 container 5 from both ends, and are fixed through the locking bolts 63, and the lower cover plate accommodating grooves 31 and the container accommodating grooves 621 are matched, so that the fixing effect is better. Step-shaped protrusions matched with the side walls of the etching liquid 05 container 5 are arranged at the bottom of the container through hole, and the fixing effect is further enhanced.
To explain further, the container further comprises a sealing upper rubber block 71 and a sealing lower rubber block 72, wherein the sealing upper rubber block 71 and the sealing lower rubber block 72 are arranged in the container accommodating groove 621; the sealing gluing block 71 is arranged at the bottom of the etching liquid 05 container 5, and the middle part of the sealing gluing block 71 is provided with a hole and is communicated with the bottom of the etching liquid 05 container 5; the middle part of the lower sealing rubber block 72 and the middle part of the container accommodating groove 621 are both provided with light path through holes; the opposite surfaces of the sealing upper rubber block 71 and the sealing lower rubber block 72 are provided with grooves, the upper groove and the lower groove are buckled to form a containing cavity for containing the to-be-processed sample 01, and the to-be-processed sample 01 is clamped and fixed in the containing cavity between the sealing upper rubber block 71 and the sealing lower rubber block 72.
The to-be-processed sample 01 is fixed by the sealing upper rubber block 71 and the sealing lower rubber block 72, and the sealing upper rubber block 71 and the sealing lower rubber block 72 are made of silicon rubber, polytetrafluoroethylene (Teflon) or polymethyl methacrylate (PMMA) so as to achieve the purpose of corrosion resistance. The sealing upper rubber block 71 is communicated with the bottom of the etching liquid 05 container 5, so that the top of the sample 01 to be processed can contact the etching liquid 05, and the sealing lower rubber block 72 is provided with a light path through hole, so that a light source can irradiate the back of the sample 01 to be processed to assist etching.
In a further description, the reaction isolation chamber 3 is provided with an air inlet 32 and an air outlet 33, the air inlet 32 is disposed at a bottom position of one side of the reaction isolation chamber 3, and the air outlet 33 is disposed at a top position of one side of the reaction isolation chamber 3 opposite to the air inlet 32.
The exhaust port 33 and the gas inlet 32 are used for removing toxic components in the volatile gas or the product gas of the etching solution 05 in the reaction isolation chamber 3. The gas is discharged through an exhaust gas treatment device by connecting a high-pressure gas to an air inlet 32 or connecting a negative pressure device to an air outlet 33.
In a further description, a stirring bracket 8 is arranged at the top of the reaction isolation cavity 3; the stirring support 8 is of a hollow structure, the bottom of the stirring support 8 is of a cylindrical structure, and the stirring support 8 is fixed to the top of the reaction isolation cavity 3.
Stirring support 8 plays the effect of support to agitator 4, and stirring support 8's bottom is the cylinder structure, has increased bearing capacity.
To be further described, the reaction isolation chamber 3 includes a chamber 301 and a cover 302, and the cover 302 is fastened to the chamber 301 to form a closed space; the top of the cover body 302 is provided with a cavity cover handle 34, and the cavity cover handle 34 is arranged at two sides of the top of the cover body 302.
The cavity cover handle 34 is convenient for opening the cavity cover and filling the etching liquid 05.
The method for assisting etching by utilizing interference light 02 irradiation comprises the following steps:
step one, cleaning, photoetching, developing and plating a metal catalyst layer 04 on a sample 01 to be processed;
step two, installing the sample 01 to be processed into the device for assisting in etching by the interference illumination 02 irradiation, adding etching liquid 05, turning on a light source, enabling the etching liquid 05 to contact one side, provided with the metal catalyst layer 04, of the sample 01 to be processed, and enabling the light source to irradiate the other side of the sample 01 to be processed;
step three, after reacting for a period of time, the length of the processed micro-nano structure 06 is L1, the irradiation position is translated to S1, the micro-nano structure 06 extends the length L2 towards the interference fringe 03 bright fringe area to form a turning point 1, and the turning angle is α 1;
after reacting for a period of time, translating the irradiation position to S2 to extend the length L3 of the micro-nano structure 06 towards the interference fringe 03 bright fringe area to form a turning point 2, wherein the turning angle is α 2;
and step five, repeating the step four to obtain the required micro-nano structure 06, taking out the processed sample, and fully cleaning.
Plating a metal catalyst layer 04 on the front surface of the sample, contacting with the etching solution 05, and applying two beams of light 02 on the back surface of the sample to form interference fringes 03 with controllable spacing and intensity. Irradiating the interference fringes 03 on the back surface of the sample to generate holes in the internal area of the sample, and transmitting the holes to the front surface of the sample 01 to be processed; in addition, the hole concentration and the brightness of the interference fringes 03 are in a positive correlation relationship, namely, the holes in the bright fringe region are more, the holes in the dark fringe region are less, and the front surface of the sample 01 to be processed is easier to etch in the region corresponding to the bright fringes on the back surface. Meanwhile, under the catalytic action of the metal catalyst layer 04, isotropic etching is generated on the sample 01 to be processed. The length and the turning angle of the micro-nano structure 06 can be controlled by adjusting the etching time, the position of the interference fringes 03 and the irradiation time. The micro-fluidic and other occasions need to bend the channel to control chemical reaction, the bent channel can also increase the reflection times of light and control the transmission of the light, and the application in photoelectrons is very wide. Because the turning angle is highly controllable, accurate etching can be performed according to actual needs. After reacting for a period of time, processing the sample 01 to be processed to obtain the micro-nano structure 06 with controllable geometric dimension and height. The utility model creatively provides a device for irradiating from the back of a sample 01 to be processed, which overcomes the defect that the front illumination 02 mask-free sample forms an uncontrollable porous structure due to the transverse movement of a cavity; the method has the advantages that interference illumination 02-ray auxiliary etching and metal-auxiliary chemical etching are innovatively combined, the defect that the dimension of the sample micro-nano structure 06 cannot be controlled due to the fact that common back illumination 02-auxiliary etching is overcome, and the micro-nano structure 06 with the controllable pattern dimension height, the controllable length height and the controllable turning angle height is obtained through the combined action of the metal catalyst layer 04.
The component of the sample 01 to be processed in the first step is silicon, germanium, gallium arsenide, silicon carbide or gallium nitride; the metal catalyst layer 04 is composed of one or more of gold, silver, palladium, platinum, titanium and chromium, and the distance between the metal catalyst layer 04 and the distance between the interference light fringes is equal.
The distance between the metal catalyst layers 04 is equal to the distance between the interference bright fringes, and the metal catalyst layers and the interference bright fringes guide the movement of cavities from the front side and the back side of the sample 01 to be processed simultaneously, so that the height-controllable micro-nano structure 06 is etched.
Further, the etching solution 05 in the second step is composed of one or more of hydrofluoric acid, sulfuric acid, nitric acid, hydrogen peroxide, potassium permanganate, potassium persulfate, ammonia water, potassium hydroxide, glycerol, ethylene glycol, ethanol and water as the etching solution 05.
Further, the light source in the second step is formed by superimposing two beams of light with the same or two wavelengths of 514nm, 365nm and 257nm, the two beams of light form an included angle θ, the power is 0.1-10W, and the irradiation time range is 1-180 min.
The illumination 02 is obtained by frequency doubling of fiber laser with the wavelength of 1024nm, and is divided by 2, 3 and 4 in sequence, so that the wavelength is shorter after frequency doubling, and the photon energy is better. After irradiation on a semiconductor (silicon), the generated holes have higher energy and are easier to etch. The power is selected within the range of 0.1-10W, because the power is too small, the effect cannot be achieved, and the power is too large, the silicon wafer can be directly punched or damaged, and the cavity guide etching cannot be generated. The etching time is determined according to the size of the etched microstructure. The etching rate is 0.3-1.58 μm/min, so the upper limit of the illumination time 02 is 3 hours.
The above description is only for the preferred embodiment of the present invention, and for those skilled in the art, there are variations on the detailed description and the application scope according to the idea of the present invention, and the content of the description should not be construed as a limitation to the present invention.
Claims (6)
1. An apparatus for assisting etching by irradiation of interference light, characterized in that: the device comprises a base, a six-degree-of-freedom platform, a reaction isolation cavity, a stirrer and an etching liquid container; the six-degree-of-freedom platform is arranged at the bottom of the base, and the reaction isolation cavity is arranged at the top of the base; the etching liquid container is arranged in the reaction isolation cavity, and the stirrer extends into the etching liquid container from the top of the reaction isolation cavity; the bottom opening of the etching liquid container is used for fixing a sample to be processed; the six-degree-of-freedom platform carries a light source, the bottoms of the base and the reaction isolation cavity are provided with light path through holes, and an optical filter is arranged in the light path through hole of the reaction isolation cavity; and light emitted by the light source sequentially penetrates through the base and the reaction isolation cavity from the bottom of the base to irradiate on the sample to be processed at the bottom of the etching liquid container and form interference fringes.
2. The apparatus for etching assistance by irradiation of interference light according to claim 1, wherein: the etching solution container is fixed between the locking device upper cover plate and the locking device lower cover plate; a lower cover plate accommodating groove is formed in the inner side of the bottom of the reaction isolation cavity, and a lower cover plate of the locking device is arranged in the lower cover plate accommodating groove; a container accommodating groove is formed in the middle of the lower cover plate of the locking device, and the bottom of the etching liquid container is arranged in the container accommodating groove; a container through hole is formed in the middle of the upper cover plate of the locking device, and step-shaped protrusions matched with the side walls of the etching liquid container are arranged at the bottom of the container through hole; the etching liquid container penetrates through the container through hole and is inserted into the container accommodating groove; and the upper cover plate of the locking device and the lower cover plate of the locking device are locked and fixed through locking bolts.
3. The apparatus for etching assistance by irradiation of interference light according to claim 2, wherein: the container also comprises a sealing upper rubber block and a sealing lower rubber block which are arranged in the container accommodating groove; the sealing gluing block is arranged at the bottom of the etching liquid container, and the middle part of the sealing gluing block is provided with a hole and is communicated with the bottom of the etching liquid container; the middle part of the lower sealing rubber block and the middle part of the container accommodating groove are both provided with light path through holes; the surface of the sealing upper rubber block opposite to the surface of the sealing lower rubber block is provided with a groove, the upper groove and the lower groove are buckled to form a containing cavity used for containing a sample to be processed, and the sample to be processed is clamped and fixed in the containing cavity between the sealing upper rubber block and the sealing lower rubber block.
4. The apparatus for etching assistance by irradiation of interference light according to claim 1, wherein: the reaction isolation cavity is provided with an air inlet and an air outlet, the air inlet is arranged at the bottom of one side of the reaction isolation cavity, and the air outlet is arranged at the top of one side of the reaction isolation cavity opposite to the air inlet.
5. The apparatus for etching assistance by irradiation of interference light according to claim 1, wherein: the top of the reaction isolation cavity is provided with a stirring bracket; the stirring support is of a hollow structure, the bottom of the stirring support is of a cylindrical structure, and the stirring support is fixed to the top of the reaction isolation cavity.
6. The apparatus for etching assistance by irradiation of interference light according to claim 1, wherein: the reaction isolation cavity comprises a cavity body and a cover body, and the cover body is buckled on the cavity body to form a closed space; the top of lid is equipped with the chamber lid handle, the chamber lid handle sets up the both sides at lid top.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201921397063.XU CN210073789U (en) | 2019-08-26 | 2019-08-26 | Device for assisting etching by utilizing interference light irradiation |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201921397063.XU CN210073789U (en) | 2019-08-26 | 2019-08-26 | Device for assisting etching by utilizing interference light irradiation |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110444494A (en) * | 2019-08-26 | 2019-11-12 | 广东工业大学 | A kind of device and method using interference light irradiation auxiliary etch |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110444494A (en) * | 2019-08-26 | 2019-11-12 | 广东工业大学 | A kind of device and method using interference light irradiation auxiliary etch |
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