CN110444494A - A kind of device and method using interference light irradiation auxiliary etch - Google Patents
A kind of device and method using interference light irradiation auxiliary etch Download PDFInfo
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- CN110444494A CN110444494A CN201910792511.4A CN201910792511A CN110444494A CN 110444494 A CN110444494 A CN 110444494A CN 201910792511 A CN201910792511 A CN 201910792511A CN 110444494 A CN110444494 A CN 110444494A
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- etching liquid
- separate cavities
- processed
- sample
- viscose
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- 238000000034 method Methods 0.000 title claims description 29
- 238000005530 etching Methods 0.000 claims abstract description 76
- 239000007788 liquid Substances 0.000 claims abstract description 66
- 238000006243 chemical reaction Methods 0.000 claims abstract description 50
- 239000002086 nanomaterial Substances 0.000 claims abstract description 24
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 23
- 230000003287 optical effect Effects 0.000 claims abstract description 20
- 229920000297 Rayon Polymers 0.000 claims description 39
- 238000007789 sealing Methods 0.000 claims description 29
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 24
- 230000003197 catalytic effect Effects 0.000 claims description 20
- 238000003756 stirring Methods 0.000 claims description 16
- 239000004615 ingredient Substances 0.000 claims description 12
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 9
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 4
- 238000011161 development Methods 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 4
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910002601 GaN Inorganic materials 0.000 claims description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000000908 ammonium hydroxide Substances 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 235000011187 glycerol Nutrition 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 239000012286 potassium permanganate Substances 0.000 claims description 3
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 claims description 3
- 235000019394 potassium persulphate Nutrition 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 2
- 229910017604 nitric acid Inorganic materials 0.000 claims description 2
- 230000000737 periodic effect Effects 0.000 abstract description 3
- 230000005855 radiation Effects 0.000 abstract description 3
- 239000000523 sample Substances 0.000 description 48
- 239000004065 semiconductor Substances 0.000 description 13
- 239000000463 material Substances 0.000 description 12
- 238000012545 processing Methods 0.000 description 8
- 238000005286 illumination Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 4
- 238000003486 chemical etching Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 235000011118 potassium hydroxide Nutrition 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 239000013068 control sample Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
Abstract
The present invention relates to a kind of devices using interference light irradiation auxiliary etch, including pedestal, six degree of freedom platform, reaction separate cavities, blender and etching liquid container；The bottom of the pedestal is arranged in the six degree of freedom platform, and the top of the pedestal is arranged in the reaction separate cavities；The etching liquid container is arranged in the reaction separate cavities, and the blender is extend into the etching liquid container at the top of the reaction separate cavities；The bottom opening of the etching liquid container, fixed sample to be processed at the bottom opening of the etching liquid container；The six degree of freedom platform carries light source, and the pedestal and the bottom for reacting separate cavities are equipped with optical path through-hole, are equipped with optical filter in the optical path through-hole of the reaction separate cavities.Six degree of freedom is flat can to drive radiation source to realize periodic wobble and rotation, compensated and irradiated at the sample back side to be processed with uniform interference fringe, so that sample to be processed be guided to etch to form the highly controllable micro-nano structure of geometric dimension.
Description
Technical field
The present invention relates to semiconductor material lithographic technique fields, and in particular to a kind of to irradiate auxiliary etch using interference light
Device and method.
Background technique
The common method that microfabrication is carried out to semiconductor material includes: dry etching, laser processing, wet etching.It is dry
Method etching uses reaction gas, is processed to semiconductor material.Conventional process has reactive ion etching (RIE) etc.,
Advantage is machining accuracy height, but equipment cost is high, maintenance cost is high, and processing speed is slower.Laser processing is often used femtosecond and swashs
The ultrafast lasers such as light or picosecond laser process semiconductor material, and advantage is that processing speed is fast, and equipment cost is lower, is not required to
Pre-production exposure mask etc. is wanted, the disadvantage is that the constructive difficulty of laser processing sub-micron or nano-scale is larger, is easily produced in process
The heat zone of influence.Therefore, wet etching becomes such as metal Assisted Chemical Etching Process (MACE) and finely add to semiconductor material
The new selection of one kind of work.The conventional flowsheet of metal Assisted Chemical Etching Process includes: firstly, according to processing request in semiconductor material
By modes such as photoetching development, electron beam plated films on material, metal catalytic layer is plated in sample surfaces；Then, sample is immersed in
In etching liquid, so that the semiconductor portions contacted with metal catalytic layer are dissolved because chemical reaction occurs, the part not being dissolved
It is retained to obtain target micro-structure.For low-gap semiconductor material, such as silicon, GaAs, metal assisted chemical reactions
Method can be realized easily；But for semiconductor material with wide forbidden band, such as silicon carbide, silicon nitride, due to chemical reaction be difficult into
Row, conventional metal Assisted Chemical Etching Process method are generally difficult to realize processing, need to invent new processing method.
Illumination auxiliary etch be used to process porous silicon (Chinese patent CN201120406111.4), nitride porous gallium (Lu,
H, 1997) etc..After above-mentioned semiconductor material surface absorbs photon, hole needed for generating etching semiconductor, so that chemistry occur
Reaction, the dissolution removal for realizing material.The shortcomings that conventional illumination auxiliary etch, is, can only process and obtain on semiconductor material
Unordered microwell array cannot achieve the accurate control to micro-nano structure, it is necessary to propose a kind of new method, improve illumination auxiliary and carve
Erosion, obtains the micro-nano structure of morphology controllable.
Summary of the invention
It is controllable it is an object of the invention to aiming at the deficiencies in the prior art, provide a kind of micro-nano structure dimensional height
Using interference light irradiation auxiliary etch device and method.
To achieve this purpose, the present invention adopts the following technical scheme:
It is a kind of using interference light irradiation auxiliary etch device, including pedestal, six degree of freedom platform, reaction separate cavities, stir
Mix device and etching liquid container；The bottom of the pedestal is arranged in the six degree of freedom platform, and the reaction separate cavities are arranged in institute
State the top of pedestal；The etching liquid container is arranged in the reaction separate cavities, and the blender is from the reaction separate cavities
Top extend into the etching liquid container；It opens the bottom of the bottom opening of the etching liquid container, the etching liquid container
Fixed sample to be processed at mouthful；The six degree of freedom platform carries light source, and the pedestal and the bottom for reacting separate cavities are equipped with
Optical path through-hole, the optical path through-hole of the reaction separate cavities is interior to be equipped with optical filter；The light that the light source issues is from the pedestal
Bottom, which sequentially passes through the pedestal and reacts separate cavities, is irradiated on the sample to be processed of the bottom for etching liquid container simultaneously shape
At interference fringe.
Further description further includes locking device, and the locking device includes locking device upper cover plate, locking device
Lower cover plate and clamping screw, the etching liquid container are fixed between the locking device upper cover plate and locking device lower cover plate；
The bottom inside of the reaction separate cavities is equipped with lower cover plate holding tank, and the locking device lower cover plate setting is held in the lower cover plate
It receives in slot；The middle part of the locking device lower cover plate is equipped with container holding tank, and the bottom of the etching liquid container is arranged described
In container holding tank；The middle part of the locking device upper cover plate is equipped with container through-hole, and the bottom of the container through-hole is equipped with and institute
The side wall for stating etching liquid container is equipped with the step-like protrusion worked in coordination；The etching liquid container is inserted into across the container through-hole
Into the container holding tank；It is locked admittedly between the shrinking device upper cover plate and locking device lower cover plate by clamping screw
It is fixed.
Further description further includes sealing blob of viscose and sealing lower blob of viscose, blob of viscose and the lower glue of sealing in the sealing
Block is arranged in the container holding tank；The bottom of the etching liquid container is arranged in blob of viscose in the sealing, in the sealing
The middle part aperture of blob of viscose and with it is described etching liquid container bottom be connected to；The middle part of blob of viscose and the container accommodate under the sealing
The middle part of slot offers optical path through-hole；Be all provided on the blob of viscose face opposite with lower blob of viscose is sealed in the sealing it is fluted, up and down
Two grooves fasten the accommodating chamber to be formed for accommodating the sample to be processed, and the specimen holder to be processed is tightly fixed on institute
It states in the accommodating chamber under sealing upper blob of viscose and sealing between blob of viscose.
Further description, the reaction separate cavities are equipped with air inlet and exhaust outlet, and the air inlet is arranged in institute
The bottom position of reaction separate cavities side is stated, the side opposite with the air inlet of reaction separate cavities is arranged in the exhaust outlet
Top position.
The top of further description, the reaction separate cavities is equipped with stirring stant；The stirring stant is hollow knot
Structure, the bottom of the stirring stant are cylindrical structure, and the stirring stant is fixed on the top of the reaction separate cavities.
Further description, the reaction separate cavities include cavity and lid, and the lid fastens on the cavity
Form closed space；The top of the lid is equipped with chamber lid handle, and two at the top of the lid are arranged in the chamber lid handle
Side.
Using the method for interference light irradiation auxiliary etch, include the following steps:
Step 1, treat processed sample cleaned, photoetching, development and plating metal Catalytic Layer；
Sample to be processed is installed in the device of the interference light irradiation auxiliary etch, etching liquid is added, beats by step 2
It opens the light source, so that etching liquid is touched the side that sample to be processed has metal catalytic layer, light source is made to be irradiated to sample to be processed
The other side；
Step 3, after reacting a period of time, the micro-nano structure length processed is L1, is translated at irradiation position to S1,
Make micro-nano structure towards interference fringe bright fringes region extended length L2, form the 1st turning point, corner is α 1；
Step 4 after reacting a period of time, translates at irradiation position to S2, makes micro-nano structure towards interference fringe bright fringes
Region extended length L3, forms the 2nd turning point, and corner is α 2；
Step 5 repeats step 4, obtains required micro-nano structure, take out the sample completed the process, sufficiently cleans.
Further description, the ingredient of the sample to be processed in the step 1 are silicon, germanium, GaAs, carbonization
Silicon or gallium nitride；The ingredient of the metal catalytic layer is one of gold, silver, palladium, platinum, titanium and chromium or a variety of, and the metal
The spacing of Catalytic Layer is equal with the spacing of interference light bright fringes.
Further description, it is hydrofluoric acid, sulfuric acid, nitre that the ingredient of the etching liquid in the step 2, which is etching liquid ingredient,
One of acid, hydrogen peroxide, potassium permanganate, potassium peroxydisulfate, ammonium hydroxide, potassium hydroxide, glycerine, ethylene glycol, second alcohol and water or
It is a variety of.
Further description, the light source in the step 2 are formed by stacking by two-beam, two-beam 514nm,
Same or two kinds of wavelength two-beam in 365nm, 257nm, for two-beam at angle theta, power is 0.1~10W, irradiation time
Range be 1~180min.
Beneficial effects of the present invention: six degree of freedom platform freely adjusts the incident direction of light source, and light source is filtered through optical filter
Light, selectivity are shone through fill-in light.Blender is rotated with the velocity of rotation of 10~1000rpm, makes etching liquid and sample to be processed
Sufficiently reaction.Six degree of freedom platform driving light source moves up and down, it can be achieved that irradiation distance maximum value is 100mm, and minimum value is
5mm, and radiation source can be driven to realize periodic wobble and rotation, it is compensated with uniform interference fringe at the sample back side to be processed
Irradiation, so that sample to be processed be guided to etch to form the highly controllable micro-nano structure of geometric dimension.
Detailed description of the invention
Present invention will be further explained below with reference to the attached drawings and examples.
Fig. 1 is the overall structure diagram of one embodiment of the present of invention；
Fig. 2 is the partial structure diagram of one embodiment of the present of invention；
Fig. 3 is the schematic diagram of the etching sample to be processed of one embodiment of the present of invention；
Fig. 4 is the schematic diagram that sample to be processed is initially etched in one embodiment of the present of invention；
Fig. 5 is the schematic diagram of etching sample to be processed at mobile irradiation position to S1 in one embodiment of the present of invention；
Fig. 6 is the schematic diagram of etching sample to be processed at mobile irradiation position to S2 in one embodiment of the present of invention；
Wherein: pedestal 1, six degree of freedom platform 2, reaction separate cavities 3, lower cover plate holding tank 31, air inlet 32, exhaust outlet
33, chamber lid handle 34, optical filter 35, cavity 301, lid 302, blender 4, etching liquid container 5, locking device 6, locking dress
It sets upper cover plate 61, locking device lower cover plate 62, container holding tank 621, clamping screw 63, blob of viscose 71 in sealing, seal lower blob of viscose
72, stirring stant 8, sample to be processed 01, illumination 02, interference fringe 03, metal catalytic layer 04, etching liquid 05 and micro-nano structure
06。
Specific embodiment
To further illustrate the technical scheme of the present invention below with reference to the accompanying drawings and specific embodiments.
As shown in figs 1 to 6, a kind of device for penetrating auxiliary etch according to 02 using interference light, including pedestal 1, six degree of freedom are flat
Platform 2, reaction separate cavities 3,05 container 5 of blender 4 and etching liquid；The bottom of the pedestal 1 is arranged in the six degree of freedom platform 2
The top of the pedestal 1 is arranged in portion, the reaction separate cavities 3；05 container 5 of etching liquid is arranged in the reaction separate cavities
In 3, the blender 4 is extend into 05 container 5 of etching liquid from the top of the reaction separate cavities 3；The etching liquid 05
The bottom opening of container 5, fixed sample 01 to be processed at the bottom opening of 05 container 5 of etching liquid；The six degree of freedom is flat
Platform 2 carries light source, and the pedestal 1 and the bottom for reacting separate cavities 3 are equipped with optical path through-hole, the optical path of the reaction separate cavities 3
Optical filter 35 is equipped in through-hole；The light that the light source issues sequentially passes through the pedestal 1 and reaction from the bottom of the pedestal 1
Separate cavities 3 are irradiated on the sample to be processed 01 of the bottom of 05 container 5 of etching liquid and form interference fringe 03.
Six degree of freedom platform 2 freely adjusts the incident direction of light source, and light source filters through optical filter 35, and selectivity is through auxiliary
Help illumination 02.Blender 4 is rotated with the velocity of rotation of 10~1000rpm, reacts etching liquid 05 sufficiently with sample 01 to be processed.
Light source is driven to move up and down for six degree of freedom platform 2, it can be achieved that irradiation distance maximum value is 100mm, minimum value 5mm, and can be driven
Dynamic radiation source realizes periodic wobble and rotation, is compensated and is irradiated at 01 back side of sample to be processed with uniform interference fringe 03,
To guide the etching of sample 01 to be processed to form the highly controllable micro-nano structure 06 of geometric dimension.More preferably, optical filter 35
Area is greater than sample 01 to be processed, and the back side of sample 01 to be processed is enable adequately to be irradiated.
Further description further includes locking device 6, and the locking device 6 includes locking device upper cover plate 61, locking
Device lower cover plate 62 and clamping screw 63,05 container 5 of etching liquid are fixed on the locking device upper cover plate 61 and locking dress
It sets between lower cover plate 62；The bottom inside of the reaction separate cavities 3 is equipped with lower cover plate holding tank 31, the locking device lower cover plate
62 are arranged in the lower cover plate holding tank 31；The middle part of the locking device lower cover plate 62 is equipped with container holding tank 621, described
The bottom of 05 container 5 of etching liquid is arranged in the container holding tank 621；The middle part of the locking device upper cover plate 61, which is equipped with, to hold
The bottom of device through-hole, the container through-hole is equipped with and the side wall of 05 container 5 of etching liquid is step-like prominent equipped with what is worked in coordination
It rises；05 container 5 of etching liquid passes through the container through-hole and is inserted into the container holding tank 621；On the shrinking device
It is locked between cover board and locking device lower cover plate 62 by clamping screw 63.
Blender 4 can generate vibration at work, it is therefore desirable to the fixation for consolidating 05 container 5 of etching liquid.Shrinking device
Upper cover plate and locking device lower cover plate 62 clamp 05 container 5 of etching liquid from both ends, and fixed by clamping screw 63, under cooperation
Cover board holding tank 31 and container holding tank 621, keep fixed effect more preferable.The bottom of the container through-hole is equipped with and the etching liquid
The side wall of 05 container 5 is equipped with the step-like protrusion worked in coordination, and further strengthens fixed function.
Further description further includes sealing blob of viscose 71 and sealing lower blob of viscose 72, blob of viscose 71 and close in the sealing
Lower blob of viscose 72 is sealed to be arranged in the container holding tank 621；05 container 5 of etching liquid is arranged in blob of viscose 71 in the sealing
Bottom the middle part aperture of blob of viscose 71 and is connected in the sealing with the bottom of 05 container 5 of etching liquid；Blob of viscose under the sealing
72 middle part and the middle part of the container holding tank 621 offer optical path through-hole；Blob of viscose 71 and the lower glue of sealing in the sealing
It is all provided with fluted on the opposite face of block 72, upper and lower two grooves fasten the appearance to be formed for accommodating the sample to be processed 01
Receive chamber, the sample 01 to be processed is fixedly clamped in blob of viscose 71 in the sealing and seals in accommodating chamber between lower blob of viscose 72.
The lower blob of viscose 72 of blob of viscose 71 and sealing is fixed by sample 01 to be processed in sealing, blob of viscose 71 and blob of viscose under sealing in sealing
72 select silicon rubber, polytetrafluoroethylene (PTFE) (Teflon) or polymethyl methacrylate (PMMA), to reach corrosion resistant purpose.It is close
It seals up blob of viscose 71 to be connected to the bottom of 05 container 5 of etching liquid, the top of sample 01 to be processed is enable to touch etching liquid 05, it is close
It seals lower blob of viscose 72 and is equipped with optical path through-hole, light source is enable to be irradiated to the back side auxiliary etch of sample 01 to be processed.
Further description, the reaction separate cavities 3 are equipped with air inlet 32 and exhaust outlet 33, and the air inlet 32 is set
The bottom position in reaction 3 side of separate cavities is set, reaction separate cavities 3 the and described air inlet is arranged in the exhaust outlet 33
The top position of 32 opposite sides.
The exhaust outlet 33 and air inlet 32 are for removing 05 volatilization gas of etching liquid or product gas in reaction separate cavities 3
In toxic component.In such a way that air inlet 32 connects high pressure gas or exhaust outlet 33 connects negative pressure equipment, gas is discharged and passes through
Emission-control equipment.
The top of further description, the reaction separate cavities 3 is equipped with stirring stant 8；The stirring stant 8 is hollow
Structure, the bottom of the stirring stant 8 are cylindrical structure, and the stirring stant 8 is fixed on the top of the reaction separate cavities 3.
Stirring stant 8 plays the role of support to blender 4, and the bottom of stirring stant 8 is cylindrical structure, increases load
Ability.
Further description, the reaction separate cavities 3 include cavity 301 and lid 302, and the lid 302 fastens to
Closed space is formed on the cavity 301；The top of the lid 302 is equipped with chamber lid handle 34, and the chamber lid handle 34 is set
Set the two sides at 302 top of lid.
Chamber lid handle 34, which facilitates, opens chamber lid, fills etching liquid 05.
The method for penetrating auxiliary etch according to 02 using interference light, includes the following steps:
Step 1, treat processed sample 01 cleaned, photoetching, development and plating metal Catalytic Layer 04；
Sample 01 to be processed is installed to the interference light and penetrated in the device of auxiliary etch according to 02 by step 2, and etching is added
Liquid 05 opens light source, so that etching liquid 05 is touched the side that sample 01 to be processed has metal catalytic layer 04, is irradiated to light source
The other side of sample 01 to be processed；
Step 3, after reacting a period of time, 06 length of micro-nano structure processed is L1, translation irradiation position to S1
Place makes micro-nano structure 06 towards 03 bright fringes region extended length L2 of interference fringe, forms the 1st turning point, and corner is α 1；
Step 4 after reacting a period of time, translates at irradiation position to S2, keeps micro-nano structure 06 bright towards interference fringe 03
Fringe area extended length L3, forms the 2nd turning point, and corner is α 2；
Step 5 repeats step 4, obtains required micro-nano structure 06, take out the sample completed the process, sufficiently cleans.
Metal catalytic layer 04 is plated in sample front and is contacted with etching liquid 05, is applied two-beam at the sample back side and is shone 02,
Form spacing, the interference fringe 03 of intensity controlled.It is radiated at the interference fringe 03 at the sample back side, generates sample interior region empty
Cave, and it is transferred to the front of sample 01 to be processed；In addition, the brightness positive correlation of hole concentration and interference fringe 03 ---
The region hole of bright fringes is more, and the region hole of dark fringe is few, keeps the positive overleaf bright fringes of sample 01 to be processed corresponding
Region is easier to etch.Meanwhile under the catalytic action of metal catalytic layer 04, treats processed sample 01 and generate isotropism
Etching.By adjusting etch period, the position of interference fringe 03 and irradiation time, 06 length of micro-nano structure and turning angle are realized
Controllably.The occasions such as micro-fluidic need bent passage control chemical reaction, and bent passage also can increase the order of reflection of light, control light
Propagation, it is very widely used in photoelectron.It, can accurate etching according to actual needs since turning angle is highly controllable.
After reacting a period of time, processing obtains the highly controllable micro-nano structure 06 of geometric dimension on sample 01 to be processed.Present invention wound
It proposes to new property the device from 01 back side illuminaton of sample to be processed, overcomes front lighting and shine 02 without exposure mask sample because of transverse shifting sky
Cave and the shortcomings that form uncontrollable porous structure；It innovatively proposes interference light penetrating auxiliary etch and metal assistant chemical according to 02
Lithographic method combines, and overcomes the shortcomings that general back light shines 02 auxiliary etch, is unable to control sample 06 size of micro-nano structure, leads to
The collective effect for crossing metal catalytic layer 04, obtains that dimension of picture is highly controllable, length is highly controllable, turning angle is highly controllable
Micro-nano structure 06.
The ingredient of the sample 01 to be processed in the step 1 is silicon, germanium, GaAs, silicon carbide or gallium nitride；Institute
The ingredient for stating metal catalytic layer 04 is one of gold, silver, palladium, platinum, titanium and chromium or a variety of, and between the metal catalytic layer 04
Away from equal with the spacing of interference light bright fringes.
The spacing of metal catalytic layer 04 is equal with the spacing of interference light bright fringes, the two simultaneously from sample 01 to be processed just
The movement in face and back side guidance hole, to etch highly controllable micro-nano structure 06.
Further description, it is hydrofluoric acid, sulphur that the ingredient of the etching liquid 05 in the step 2, which is 05 ingredient of etching liquid,
Acid, nitric acid, hydrogen peroxide, potassium permanganate, potassium peroxydisulfate, ammonium hydroxide, potassium hydroxide, glycerine, ethylene glycol, one in second alcohol and water
Kind is a variety of.
Further description, the light source in the step 2 are formed by stacking by two-beam, two-beam 514nm,
Same or two kinds of wavelength two-beam in 365nm, 257nm, for two-beam at angle theta, power is 0.1~10W, irradiation time
Range be 1~180min.
Here illumination 02 is obtained from the optical-fiber laser frequency multiplication that wavelength is 1024nm, successively divided by 2,3,4, frequency multiplication postwave
Length is shorter, and photon energy is more preferable.After being radiated on semiconductor (silicon), the energy in the hole of generation is higher, is more easier to etch.Function
Rate selects the range of 0.1~10W, because power is too small, can not have effect, power is too big, can directly silicon wafer be punched or be beaten
Hurt, hole guidance etching can not be generated.Etch period is depending on the size of the micro-structure of etching.Etch rate is in 0.3-
1.58 μm/min, so the upper limit of 02 time of illumination is 3 hours.
The above is only a preferred embodiment of the present invention, for those of ordinary skill in the art, according to the present invention
Thought, there will be changes in the specific implementation manner and application range, and the content of the present specification should not be construed as to the present invention
Limitation.
Claims (10)
1. a kind of device using interference light irradiation auxiliary etch, it is characterised in that: including pedestal, six degree of freedom platform, reaction
Separate cavities, blender and etching liquid container；The bottom of the pedestal, the reaction separate cavities are arranged in the six degree of freedom platform
The top of the pedestal is set；The etching liquid container is arranged in the reaction separate cavities, the blender from it is described instead
It answers and is extend at the top of separate cavities in the etching liquid container；The bottom opening of the etching liquid container, the etching liquid container
Bottom opening at fixed sample to be processed；The six degree of freedom platform carries light source, the bottom of the pedestal and reaction separate cavities
Portion is equipped with optical path through-hole, is equipped with optical filter in the optical path through-hole of the reaction separate cavities；The light that the light source issues is from institute
The bottom for stating pedestal sequentially passes through the pedestal and reacts the sample to be processed that separate cavities are irradiated to the bottom of the etching liquid container
On product and form interference fringe.
2. a kind of device using interference light irradiation auxiliary etch according to claim 1, it is characterised in that: further include lock
Tight device, the locking device include locking device upper cover plate, locking device lower cover plate and clamping screw, the etching liquid container
It is fixed between the locking device upper cover plate and locking device lower cover plate；The bottom inside of the reaction separate cavities is equipped with lower cover
Plate holding tank, the locking device lower cover plate are arranged in the lower cover plate holding tank；The middle part of the locking device lower cover plate
Equipped with container holding tank, the bottom of the etching liquid container is arranged in the container holding tank；The locking device upper cover plate
Middle part be equipped with container through-hole, the bottom of the container through-hole is equipped with and the side wall of the etching liquid container is equipped with and works in coordination
Step-like protrusion；The etching liquid container passes through the container through-hole and is inserted into the container holding tank；The shrinking device
It is locked between upper cover plate and locking device lower cover plate by clamping screw.
3. a kind of device using interference light irradiation auxiliary etch according to claim 2, it is characterised in that: further include close
It seals up blob of viscose and seals lower blob of viscose, blob of viscose and the lower blob of viscose of sealing are arranged in the container holding tank in the sealing；It is described close
Seal up the bottom that the etching liquid container is arranged in blob of viscose, in the sealing middle part aperture of blob of viscose and with the etching liquid container
Bottom connection；The middle part of blob of viscose and the middle part of the container holding tank offer optical path through-hole under the sealing；It is described close
Seal up be all provided on the blob of viscose face opposite with lower blob of viscose is sealed it is fluted, upper and lower two grooves fasten to be formed it is described for accommodating
The accommodating chamber of sample to be processed, the specimen holder to be processed are tightly fixed on blob of viscose in the sealing and seal the appearance between lower blob of viscose
It receives in chamber.
4. a kind of device using interference light irradiation auxiliary etch according to claim 1, it is characterised in that: the reaction
Separate cavities are equipped with air inlet and exhaust outlet, and the bottom position of the reaction separate cavities side is arranged in the air inlet, described
The top position of the side opposite with the air inlet of reaction separate cavities is arranged in exhaust outlet.
5. a kind of device using interference light irradiation auxiliary etch according to claim 1, it is characterised in that: the reaction
The top of separate cavities is equipped with stirring stant；The stirring stant is hollow structure, and the bottom of the stirring stant is cylindrical structure,
The stirring stant is fixed on the top of the reaction separate cavities.
6. a kind of device using interference light irradiation auxiliary etch according to claim 1, it is characterised in that: the reaction
Separate cavities include cavity and lid, and the lid, which fastens to, forms closed space on the cavity；It is set at the top of the lid
There is chamber lid handle, the two sides at the top of the lid are arranged in the chamber lid handle.
7. the utilization using a kind of device using interference light irradiation auxiliary etch as claimed in any one of claims 1 to 6 is dry
The method for relating to light irradiation auxiliary etch, which comprises the steps of:
Step 1, treat processed sample cleaned, photoetching, development and plating metal Catalytic Layer；
Sample to be processed is installed in the device of the interference light irradiation auxiliary etch, etching liquid is added, opens light by step 2
Source makes etching liquid touch the side that sample to be processed has metal catalytic layer, light source is made to be irradiated to the another of sample to be processed
Side；
Step 3, after reacting a period of time, the micro-nano structure length processed is L1, translates at irradiation position to S1, makes micro-
Micro-nano structure forms the 1st turning point towards interference fringe bright fringes region extended length L2, and corner is α 1；
Step 4 after reacting a period of time, translates at irradiation position to S2, makes micro-nano structure towards interference fringe bright fringes region
Extended length L3, forms the 2nd turning point, and corner is α 2；
Step 5 repeats step 4, obtains required micro-nano structure, take out the sample completed the process, sufficiently cleans.
8. a kind of method using interference light irradiation auxiliary etch according to claim 7, it is characterised in that: the step
The ingredient of the sample to be processed in one is silicon, germanium, GaAs, silicon carbide or gallium nitride；The ingredient of the metal catalytic layer
For one of gold, silver, palladium, platinum, titanium and chromium or a variety of, and the spacing of the spacing of the metal catalytic layer and interference light bright fringes
It is equal.
9. a kind of method using interference light irradiation auxiliary etch according to claim 7, it is characterised in that: the step
The ingredient of etching liquid in two be etching liquid ingredient be hydrofluoric acid, sulfuric acid, nitric acid, hydrogen peroxide, potassium permanganate, potassium peroxydisulfate,
One of ammonium hydroxide, potassium hydroxide, glycerine, ethylene glycol, second alcohol and water are a variety of.
10. a kind of method using interference light irradiation auxiliary etch according to claim 7, it is characterised in that: the step
Light source in rapid two is formed by stacking by two-beam, same in two-beam 514nm, 365nm, 257nm or two kinds of wavelength
Two-beam, for two-beam at angle theta, power is 0.1~10W, and the range of irradiation time is 1~180min.
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