CN210030954U - Heater electrode and single crystal furnace - Google Patents
Heater electrode and single crystal furnace Download PDFInfo
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- CN210030954U CN210030954U CN201920807250.4U CN201920807250U CN210030954U CN 210030954 U CN210030954 U CN 210030954U CN 201920807250 U CN201920807250 U CN 201920807250U CN 210030954 U CN210030954 U CN 210030954U
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Abstract
The utility model discloses a heater electrode and single crystal growing furnace relates to silicon material processing technology field, and the main objective provides a heater electrode and single crystal growing furnace that can reduce the electric energy consumption of heater. The utility model discloses a main technical scheme does: a heater electrode comprising: the electrode body comprises a connecting electrode, a graphite electrode and a conductive part, the connecting electrode is fixedly connected to the bottom of the single crystal furnace, and the conductive part is arranged between the connecting electrode and the graphite electrode and used for transmitting current. The utility model is mainly used for processing silicon materials.
Description
Technical Field
The utility model relates to a silicon material processing technology field especially relates to a heater electrode and single crystal growing furnace.
Background
In the production of single crystal silicon, which is a semiconductor material generally used in the manufacture of integrated circuits and other electronic components, polycrystalline silicon is placed in a quartz crucible, subjected to a high temperature to melt, and then a seed crystal is lowered from the top into the molten polycrystalline silicon, and the molten seed crystal is recrystallized from the periphery by controlling the temperature of the liquid surface to produce an aligned single crystal silicon rod.
In the prior art, a graphite electrode is usually arranged at the bottom of a single crystal furnace, one end of the graphite electrode is connected with a heater, the other end of the graphite electrode is connected with a copper electrode, the graphite electrode has good heat conductivity and electric conductivity, and a thermal field system of the single crystal furnace can be stable in the pulling process of single crystal silicon, so that the production quality of single crystal silicon is improved.
SUMMERY OF THE UTILITY MODEL
In view of the above, embodiments of the present invention provide a heater electrode and a single crystal furnace, and mainly provide a heater electrode and a single crystal furnace capable of reducing power consumption of a heater.
In order to achieve the above object, the utility model mainly provides the following technical scheme:
in one aspect, an embodiment of the present invention provides a heater electrode, including:
the electrode body comprises a connecting electrode, a graphite electrode and a conductive part, the connecting electrode is fixedly connected to the bottom of the single crystal furnace, and the conductive part is arranged between the connecting electrode and the graphite electrode and used for transmitting current.
Furthermore, the conductive component comprises a connecting part and a transfer gasket, two ends of the connecting part are respectively connected to the connecting electrode and the graphite electrode, and the transfer gasket is sleeved on the connecting part and used for transferring current.
Furthermore, the two ends of the connecting part are provided with threads, the connecting electrode and the graphite electrode are respectively in threaded connection with the connecting part, the transfer gasket is sleeved in the middle of the connecting part, and the two sides of the transfer gasket are respectively in butt joint with the connecting electrode and the graphite electrode.
Further, the shape of the transmission gasket is an annular structure.
Further, the transfer pad has a diameter that is the same as a diameter of the graphite electrode.
Further, the material of the transfer gasket is a carbon-carbon composite material.
On the other hand, the embodiment of the utility model provides a still provide a single crystal growing furnace, include:
the furnace body and the heater electrode, the connecting electrode of the heater electrode is connected with the bottom of the furnace body.
Compared with the prior art, the utility model discloses following technological effect has:
in the technical scheme provided by the embodiment of the utility model, the electrode body is used for providing electric energy for the heater and comprises a connecting electrode, a graphite electrode and a conductive part, the connecting electrode is fixedly connected with the furnace bottom of the single crystal furnace, the conductive part is arranged between the connecting electrode and the graphite electrode and is used for transmitting current, compared with the prior art, one end of the graphite electrode is connected with the heater, the other end is connected with the copper electrode, the graphite electrode has good heat conductivity and electric conductivity, the thermal field system of the single crystal furnace can be stabilized in the drawing process of the monocrystalline silicon, thereby improving the production quality of the monocrystalline silicon, however, because the graphite electrode is directly contacted with the copper electrode, and the graphite electrode has good heat conductivity, partial heat energy generated by the heater can flow out of the thermal field through the graphite electrode and the copper electrode, thereby not only increasing the electric energy consumption of the heater, the increase that leads to manufacturing cost has still caused the waste of the energy, the embodiment of the utility model provides an in, through set up conductive parts between connection electrode and graphite electrode, because heater itself needs to change the electric energy into heat energy, then heats the crucible, consequently, the heater electrode only need transmit the electric energy can, conductive parts has good electric conductive property, simultaneously, can also reduce heat energy and pass through graphite electrode and transmit to connecting electrode to the heat conductivility of heater electrode has been reduced, and then the power consumption of heater has been reduced.
Drawings
Fig. 1 is a schematic perspective view of a heater electrode according to an embodiment of the present invention;
fig. 2 is a cross-sectional view of an electrode of a heater provided in an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a single crystal furnace according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples.
In one aspect, as shown in fig. 1 and 2, an embodiment of the present invention provides a heater electrode, including:
the electrode body comprises a connecting electrode 11, a graphite electrode 12 and a conductive part 13, wherein the connecting electrode 11 is fixedly connected to the furnace bottom 9 of the single crystal furnace, and the conductive part 13 is arranged between the connecting electrode 11 and the graphite electrode 12 and is used for transmitting current.
In the technical solution provided by the embodiment of the present invention, the electrode body is used for providing electric energy to the heater 7, the electrode body comprises a connecting electrode 11, a graphite electrode 12 and a conductive part 13, the connecting electrode 11 is fixedly connected to the furnace bottom 9 of the single crystal furnace, the conductive part 13 is arranged between the connecting electrode 11 and the graphite electrode 12 for transmitting current, compared with the prior art, one end of the graphite electrode 12 is connected to the heater 7, the other end is connected to the copper electrode, the graphite electrode 12 has good thermal conductivity and electrical conductivity, and can stabilize the thermal field system of the single crystal furnace during the pulling process of the single crystal silicon, thereby improving the production quality of the single crystal silicon, but, because the graphite electrode 12 is directly contacted with the copper electrode, and the graphite electrode 12 has good thermal conductivity, partial heat energy generated by the heater 7 can flow out of the thermal field through the graphite electrode 12 and the copper electrode, not only increased the power consumption of heater 7, lead to manufacturing cost's increase, still caused the waste of the energy, the embodiment of the utility model provides an, through set up conductive part 13 between connection electrode 11 and graphite electrode 12, because heater 7 itself need change the electric energy into heat energy, then heat the crucible, consequently, the heater electrode only need transmit the electric energy can, conductive part 13 has good electric conductive property, simultaneously, can also reduce heat energy and pass through graphite electrode 12 and transmit to connection electrode 11 to the heat conductivility of heater electrode has been reduced, and then the power consumption of heater 7 has been reduced.
The electrode body is used for providing electric energy for the heater 7, the electrode body comprises a connecting electrode 11, a graphite electrode 12 and a conductive part 13, the connecting electrode 11 is fixedly connected to the bottom 9 of the single crystal furnace, the conductive part 13 is arranged between the connecting electrode 11 and the graphite electrode 12 and is used for transmitting current, the connecting electrode 11 is usually made of copper materials and is fixed on a chassis of the single crystal furnace, the graphite electrode 12 is connected with the heater 7, the conductive part 13 is arranged between the connecting electrode 11 and the graphite electrode 12, because the heater 7 needs to convert the electric energy into heat energy and then heats the crucible, the heater electrode only needs to transmit the electric energy, but because the graphite electrode 12 has good electric conductivity and heat conductivity, when the graphite electrode 12 transmits the electric energy, partial heat energy of the heater 7 can be transmitted to the connecting electrode 11, the connecting electrode 11 discharges the heat energy out of the single crystal furnace, thereby causing the waste of partial heat energy, therefore, the conductive part 13 is arranged between the connecting electrode 11 and the graphite electrode 12, the connecting electrode 11 transfers the electric energy to the graphite electrode 12 through the conductive part 13, meanwhile, the graphite electrode 12 is contacted with the conductive part 13, most of the heat energy can be isolated by the conductive part 13, thereby achieving the technical effect of reducing the heat energy transferred by the heater electrode, further leading the heat energy to be always kept in the heat field of the single crystal furnace, and further achieving the purpose of reducing the electric energy consumption of the heater 7.
Further, as shown in fig. 1 and 2, the conductive member 13 includes a connection member 131 and a transmission gasket 132, both ends of the connection member 131 are respectively connected to the connection electrode 11 and the graphite electrode 12, and the transmission gasket 132 is fitted over the connection member 131 to transmit electric current. In this embodiment, the conductive part 13 is further defined, the connecting part 131 is used for connecting the graphite electrode 12 and the connecting electrode 11, that is, the graphite electrode 12 is fixed on the connecting electrode 11 through the connecting part 131, in order to improve the strength and stability of the heater electrode, the transfer gasket 132 is sleeved on the connecting part 131, two sides of the transfer gasket 132 are respectively attached to the connecting electrode 11 and the graphite electrode 12, the transfer gasket 132 can conduct electricity, meanwhile, the heat conductivity of the transfer gasket 132 is poor, so that most of the heat energy stays in the thermal field of the single crystal furnace, optionally, the transfer gasket 132 can be made of carbon-carbon composite material, which has good conductivity, but compared with the graphite material, the heat conductivity of the carbon-carbon composite material is one tenth of the graphite material, and, because the reaction temperature in the single crystal furnace is about 1500 degrees, therefore, the transfer pad 132 needs better high temperature resistance, and the carbon-carbon composite material has good high temperature resistance, so the transfer pad 132 made of the carbon-carbon composite material can better realize the performance of conducting electricity but not heat, of course, other materials can be used to make the transfer pad 132, such as vanadium dioxide, when the vanadium dioxide is in an environment above 67 degrees, the property of the vanadium dioxide is changed from insulation to conduction, and the thermal conductivity of the vanadium dioxide when conducting is only 10-20% of the predicted value of the wedlmann-franz law, therefore, the transfer pad 132 can also be made of the vanadium dioxide, and the connecting component 131 can be made of the carbon-carbon composite material, or stainless steel material or other supporting material under the condition that the strength meets the supporting condition, in this embodiment, by arranging the connecting component 131 on the connecting electrode 11 and the graphite electrode 12, the support strength of the heater electrode is improved, electric energy is transmitted through the transmission gasket 132 and the connecting part 131, and meanwhile, the contact area between the graphite electrode 12 and the connecting part 131 is reduced by utilizing the characteristic of poor heat conductivity of the transmission gasket 132, so that the technical effect of reducing heat energy transmitted out of the single crystal furnace through the graphite electrode 12 is achieved, and the technical effect of reducing the electric energy consumption of the heat collector is further achieved.
Further, both ends of the connection member 131 are provided with threads, the connection electrode 11 and the graphite electrode 12 are respectively threaded to the connection member 131, the transfer gasket 132 is sleeved on the middle portion of the connection member 131, and both sides of the transfer gasket 132 are respectively abutted to the connection electrode 11 and the graphite electrode 12. In this embodiment, the connection component 131 is further defined, threads are disposed at two ends of the connection component 131, so that the connection electrode 11 and the graphite electrode 12 are respectively threaded to the connection component 131, and thus stability of the connection electrode 11 and the graphite electrode 12 is improved, and the transfer gasket 132 is sleeved at the middle position of the connection component 131, so that the connection electrode 11 and the graphite electrode 12 clamp the transfer gasket 132, that is, two sides of the transfer gasket 132 are respectively abutted to the connection electrode 11 and the graphite electrode 12, and thus efficiency of the transfer gasket 132 in transferring electric energy is improved; optionally, the transfer gasket 132 is in an annular structure, a through hole is formed in the middle of the transfer gasket 132 in the annular structure, the connecting part 131 can penetrate through the through hole, so that the transfer gasket 132 is sleeved on the connecting part 131, optionally, the diameter of the transfer gasket 132 is the same as that of the graphite electrode 12, the graphite electrode 12 is generally in a cylindrical shape, the graphite electrode 12 and the connecting electrode 11 clamp the transfer gasket 132, the diameter of the transfer gasket 132 is the same as that of the graphite electrode 12, so that the edge of the graphite electrode 12 and the edge of the transfer gasket 132 are attached to each other, and therefore the technical effect of improving the stability of a thermal field in the single crystal furnace is achieved.
On the other hand, as shown in fig. 3, the embodiment of the present invention further provides a single crystal furnace, including:
furnace body 8 and a heater electrode according to the preceding claims, the connection electrode 11 of which is connected to the bottom 9 of the furnace body 8.
The embodiment provides a single crystal furnace, wherein a heater electrode comprises an electrode body, the electrode body is used for supplying electric energy to a heater 7, the electrode body comprises a connecting electrode 11, a graphite electrode 12 and a conductive part 13, the connecting electrode 11 is fixedly connected to the furnace bottom 9 of the single crystal furnace, the conductive part 13 is arranged between the connecting electrode 11 and the graphite electrode 12 and is used for transmitting current, compared with the prior art, one end of the graphite electrode 12 is connected with the heater 7, the other end of the graphite electrode is connected with the copper electrode, the graphite electrode 12 has good heat conduction performance and electric conduction performance, a thermal field system of the single crystal furnace can be stabilized in the process of pulling the single crystal silicon, thereby improving the production quality of the single crystal silicon, however, as the graphite electrode 12 is directly contacted with the copper electrode, and the graphite electrode 12 has good heat conduction performance, partial heat energy generated by the heater 7 can flow out of the thermal field through the graphite electrode 12, not only increased the power consumption of heater 7, lead to manufacturing cost's increase, still caused the waste of the energy, the embodiment of the utility model provides an, through set up conductive part 13 between connection electrode 11 and graphite electrode 12, because heater 7 itself need change the electric energy into heat energy, then heat the crucible, consequently, the heater electrode only need transmit the electric energy can, conductive part 13 has good electric conductive property, simultaneously, can also reduce heat energy and pass through graphite electrode 12 and transmit to connection electrode 11 to the heat conductivility of heater electrode has been reduced, and then the power consumption of heater 7 has been reduced.
The above description is only for the specific embodiments of the present invention, but the protection scope of the present invention is not limited thereto, and any person skilled in the art can easily think of the changes or substitutions within the technical scope of the present invention, and all should be covered within the protection scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (7)
1. A heater electrode, comprising:
the electrode body comprises a connecting electrode, a graphite electrode and a conductive part, the connecting electrode is fixedly connected to the bottom of the single crystal furnace, and the conductive part is arranged between the connecting electrode and the graphite electrode and used for transmitting current.
2. The heater electrode according to claim 1,
the conductive part comprises a connecting part and a transfer gasket, two ends of the connecting part are respectively connected to the connecting electrode and the graphite electrode, and the transfer gasket is sleeved on the connecting part and used for transferring current.
3. The heater electrode according to claim 2,
the two ends of the connecting part are provided with threads, the connecting electrode and the graphite electrode are respectively in threaded connection with the connecting part, the transfer gasket is sleeved in the middle of the connecting part, and the two sides of the transfer gasket are respectively in top connection with the connecting electrode and the graphite electrode.
4. The heater electrode according to claim 3,
the shape of the transmission gasket is an annular structure.
5. The heater electrode according to claim 3,
the transfer pad has a diameter that is the same as a diameter of the graphite electrode.
6. The heater electrode according to any one of claims 2 to 5,
the material of the transfer gasket is carbon-carbon composite material.
7. A single crystal furnace, comprising:
a furnace body and a heater electrode as claimed in any one of claims 1 to 6, the connection electrode of the heater electrode being connected to the bottom of the furnace body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920807250.4U CN210030954U (en) | 2019-05-31 | 2019-05-31 | Heater electrode and single crystal furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920807250.4U CN210030954U (en) | 2019-05-31 | 2019-05-31 | Heater electrode and single crystal furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN210030954U true CN210030954U (en) | 2020-02-07 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201920807250.4U Active CN210030954U (en) | 2019-05-31 | 2019-05-31 | Heater electrode and single crystal furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN210030954U (en) |
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2019
- 2019-05-31 CN CN201920807250.4U patent/CN210030954U/en active Active
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