CN209981263U - LED chip capable of reducing side light emission - Google Patents
LED chip capable of reducing side light emission Download PDFInfo
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- CN209981263U CN209981263U CN201920987790.5U CN201920987790U CN209981263U CN 209981263 U CN209981263 U CN 209981263U CN 201920987790 U CN201920987790 U CN 201920987790U CN 209981263 U CN209981263 U CN 209981263U
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Abstract
The utility model discloses a reduce LED chip of side light-emitting, the LED chip includes attenuate substrate, reflector layer and light emitting structure the attenuate substrate includes openly and the back, light emitting structure locates on the front of attenuate substrate, the back of attenuate substrate is equipped with the concave portion of figure, the sculpture degree of depth of the concave portion of figure is 1.3% ~ 2.6% of attenuate substrate thickness, the reflector layer is located on the back of attenuate substrate and the concave portion of figure. The utility model discloses a mutually supporting of figure indentation portion and reflection stratum reflects the light of the arbitrary light-emitting angle of active layer, and the light perpendicular to chip after the reflection openly jets out to reduce the side light-emitting of chip.
Description
Technical Field
The utility model relates to a light emitting diode technical field especially relates to a reduce LED chip of side light-emitting.
Background
An LED (Light Emitting Diode) is a semiconductor device that emits Light by using energy released during carrier recombination, and an LED chip has many advantages of low power consumption, pure chromaticity, long service life, small volume, fast response time, energy saving, environmental protection, and the like.
Referring to fig. 3, the application field of the conventional LED chip is seriously affected due to side light leakage.
Disclosure of Invention
The utility model aims to solve the technical problem that a reduce the LED chip of side light-emitting, the side light-emitting of reducible chip is provided.
The utility model aims to solve the technical problem that a LED chip manufacturing approach of reducing side light-emitting is provided, can form the concave part of figure on the attenuate substrate fast, in batches to reduce the side light-emitting of chip.
In order to solve the technical problem, the utility model provides a reduce LED chip of side light-emitting, including attenuate substrate, reflector layer and light-emitting structure, the attenuate substrate is including openly and the back, light-emitting structure locates on the front of attenuate substrate, the back of attenuate substrate is equipped with the concave portion of figure, the sculpture degree of depth of the concave portion of figure is 1.3% ~ 2.6% of attenuate substrate thickness, the reflector layer is located on the back of attenuate substrate and the concave portion of figure.
As an improvement of the above scheme, the shape of the figure indentation is square, rectangular, circular or hexagonal;
the pattern indentation is located at an edge of the thinned substrate.
As an improvement of the scheme, the etching depth of the pattern indentation is 2-4 mu m.
As an improvement of the above scheme, the light emitting structure includes a first semiconductor layer disposed on the front surface of the thinned substrate, an active layer and a first electrode disposed on the first semiconductor layer, a second semiconductor layer disposed on the active layer, and a second electrode disposed on the second semiconductor layer.
As an improvement of the scheme, the reflecting layer is composed of two materials with different refractive indexes which are alternately arranged, and the optical thickness of each material is 1/4 of the central reflecting wavelength.
As an improvement of the above scheme, the reflecting layer is made of SiO2And TiO2Are formed alternately.
Implement the utility model discloses, following beneficial effect has:
the utility model provides a reduce LED chip of side light-emitting, including attenuate substrate, reflector layer and light emitting structure, the attenuate substrate is including openly and the back, light emitting structure locates on the front of attenuate substrate, the back of attenuate substrate is equipped with the concave portion of figure, the sculpture degree of depth of the concave portion of figure is 1.3% ~ 2.6% of attenuate substrate thickness, the reflector layer is located on the back of attenuate substrate and the concave portion of figure. The utility model discloses a mutually supporting of figure indentation portion and reflection stratum reflects the light of the arbitrary light-emitting angle of active layer, and the light perpendicular to chip after the reflection openly jets out to reduce the side light-emitting of chip.
The reflective layer is composed of two materials with different refractive indexes which are alternately arranged, and the optical thickness of each material is 1/4 of the central reflection wavelength. The utility model discloses a reflection stratum is used for reflecting the light that the active layer sent to improve the positive light-emitting efficiency of chip. In order to cooperate the utility model discloses a figure indentation reduces the side light-emitting, the utility model discloses a certain difference exists with the structure of current reflection stratum in reflection stratum. Specifically, the present invention defines the thickness of each layer in the reflective layer to cooperate with the reflected wavelength and the pattern indentation.
Drawings
Fig. 1 is a schematic structural diagram of an LED chip according to the present invention;
fig. 2 is a schematic diagram of light emission of the LED chip of the present invention;
fig. 3 is a schematic diagram of light emission of a conventional LED chip.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the present invention will be described in further detail with reference to the accompanying drawings.
Referring to fig. 1, the utility model provides a pair of reduce LED chip of side light-emitting, including attenuate substrate 10, reflector layer 20 and light emitting structure 30, attenuate substrate 10 is including the front and the back, light emitting structure 30 is located on the front of attenuate substrate 10, attenuate substrate 10 back is equipped with the concave portion 11 that lacks of figure, reflector layer 20 is located on the back and the concave portion 11 that lacks of figure of attenuate substrate 10.
Specifically, the utility model discloses the material of attenuate substrate 10 is the sapphire. The thickness of the existing sapphire substrate is generally 450 mu m, and the sapphire substrate is ground, so that the heat dissipation performance of the device can be improved, and the requirements of subsequent processes such as scribing, splitting and the like can be met.
Preferably, the thickness of the thinned substrate is 20-40% of the original substrate thickness. Specifically, the thickness of the thinned substrate is 90-180 mu m. If the thickness of the thinned substrate is less than 90 mu m, the chip is easy to warp; if the thickness of the thinned substrate is larger than 180 mu m, the heat dissipation effect of the chip is poor, and subsequent scribing is difficult.
The light emitting structure 30 of the present invention includes a first semiconductor layer 31 disposed on the front surface of the thinning substrate 10, an active layer 32 and a first electrode 34 disposed on the first semiconductor layer 31, a second semiconductor layer 33 disposed on the active layer 32, and a second electrode 35 disposed on the second semiconductor layer 33.
Referring to fig. 2, the light of the LED chip active layer 32 of the present invention is emitted at any angle, and is assumed to be incident on the surface of the reflective layer 20 at an angle α, and is reflected by the reflective layer 20, so that the light is incident at an angle β to the reflective layer 20 on the side of the thinned substrate 10 having the pattern indentation 11, and is emitted from the front surface of the chip after being reflected, thereby reducing the light emitted from the side surface of the chip.
Referring to fig. 3, light emitted from an active layer of a conventional LED chip is emitted at an arbitrary angle, and if the light is incident on the surface of a reflective layer at an angle α, the light is reflected by the reflective layer, and leaks from the side surface of a substrate.
In order to better reflect light to the front of the chip for light extraction and reduce side light leakage, the pattern indentation 11 is located at the edge of the thinned substrate. Preferably, the shape of the figure indentation 11 is square, rectangular, circular or hexagonal, but not limited thereto.
The etching depth of the pattern indentation part 11 plays an important role in the light emitting angle of the chip, the deeper the etching depth is, the more the light emitting from the side surface can be reduced, but the too deep etching depth can easily cause the hidden crack and the fragment of the chip.
Preferably, the etching depth of the pattern indentation 11 is 1.3-2.6% of the thickness of the thinned substrate 10, and more preferably, the etching depth of the pattern indentation 11 is 2% of the thickness of the thinned substrate 10. If the etching depth is more than 2.6% of the thickness of the thinned substrate, the substrate is easy to have dark cracks; if the etching depth is less than 1.3% of the thickness of the substrate, the effect of reducing the light emergent from the side surface of the chip is not obvious. Specifically, the etching depth of the pattern indentation 11 is 2-4 μm.
The reflective layer 20 of the present invention is used to reflect the light emitted from the active layer 22, so as to improve the light-emitting efficiency of the chip. In order to cooperate the utility model discloses a figure indentation 11 reduces the side light-emitting, the utility model discloses a certain difference exists with the structure of current reflection stratum. Specifically, the present invention defines the thickness of each layer in the reflective layer to cooperate with the reflected wavelength and the pattern indentation. The reflective layer 20 is composed of two materials of different refractive indices arranged alternately, each having an optical thickness of 1/4 times the central reflection wavelength. Preferably, the reflective layer is made of SiO2And TiO2But is not limited thereto.
Correspondingly, the utility model also provides a reduce the manufacturing method of the LED chip of side light-emitting, including following step:
firstly, forming a light-emitting structure on the front surface of a substrate;
and forming a light-emitting structure on the front surface of the substrate by adopting an MOCVD (metal organic chemical vapor deposition) process, wherein the light-emitting structure comprises a first semiconductor layer arranged on the front surface of the substrate, an active layer and a first electrode which are arranged on the first semiconductor layer, a second semiconductor layer arranged on the active layer and a second electrode arranged on the second semiconductor layer.
Grinding the back surface of the substrate to form a thinned substrate;
specifically, the substrate of the present invention is made of sapphire, but is not limited thereto. The thickness of the existing sapphire substrate is generally 450 mu m, and the sapphire substrate is ground, so that the heat dissipation performance of the device can be improved, and the requirements of subsequent processes such as scribing, splitting and the like can be met.
Preferably, the thickness of the thinned substrate is 20-40% of the original substrate thickness. Specifically, the thickness of the thinned substrate is 90-180 mu m. If the thickness of the thinned substrate is less than 90 mu m, the chip is easy to warp; if the thickness of the thinned substrate is larger than 180 mu m, the heat dissipation effect of the chip is poor, and subsequent scribing is difficult.
Thirdly, coating photoresist on the thinned substrate, and sequentially carrying out soft baking, exposure, development and hard baking on the photoresist to form a patterned photoresist layer;
in order to form the pattern indentation on the thinning substrate rapidly and in batch, the utility model discloses a mutually supporting of photoetching technology and wet etching process realizes.
Specifically, the utility model discloses coating photoresist on the attenuate substrate to carry out soft roast, exposure, development and hard roast to photoresist in proper order, in order to form graphical photoresist layer. Wherein, the shape and the size of the patterned photoresist layer are matched with the shape and the size of the pattern concave part.
In order to form a photoresist layer with uniform thickness, the coating speed of the photoresist is 8000-10000 rpm. The soft baking temperature is 110-130 ℃, and the soft baking time is 140-180 s;
the distance between the mask and the photoresist is 10-20 μm, and the exposure amount is 180-2；
The developing time of the photoresist is 180-210 s, the hard baking temperature is 100-140 ℃, and the hard baking time is 20-50 min.
It should be noted that the thickness of the patterned photoresist layer has an important effect on the etching depth of the pattern pits. If the thickness of the graphical photoresist layer is too thick, the etching depth of the concave part of the graph is too shallow; if the thickness of the patterned photoresist layer is too thin, the etching depth of the pattern indentation is too deep. Preferably, the thickness of the patterned photoresist layer is 5-6% of the thickness of the thinned substrate.
Carrying out wet etching on the patterned photoresist layer and the thinned substrate, and forming a pattern notch part on the back of the thinned substrate;
in order to reduce the etching time, obtain the figure indentation portion of predetermineeing the sculpture degree of depth, detach graphical photoresist layer simultaneously, the utility model discloses graphical photoresist layer and the attenuate substrate that obtains step (three) are arranged in 220 ~ 270 ℃'s corrosive solution sculpture 6 ~ 30 min. It should be noted that the higher the temperature of the etching solution, the longer the etching time, the deeper the etching depth, and the more easily the light-emitting structure is broken. In order to protect the light-emitting structure and obtain a preset etching depth in a short time, preferably, the etching solution is etched in the etching solution at a temperature of 230-250 ℃ for 10-15 min.
In order to obtain the figure indentation portion of predetermineeing the sculpture degree of depth, detach graphical photoresist layer simultaneously, the utility model discloses the relative etching rate ratio of graphical photoresist layer and attenuate substrate is (0.8 ~ 1.8): 1. the relative etching rate ratio of the patterned photoresist layer and the thinned substrate is (0.9-1.5): 1.
in order to ensure the etching effect, the utility model discloses an etching solution is by H2SO4And H3PO4Composition H2SO4And H3PO4The ratio of (2-4) to (1). Because the acidity and corrosivity of the sulfuric acid are stronger than those of the phosphoric acid, the sulfuric acid is independently used for etching, the etching depth is deeper, but the surface flatness of the sapphire substrate is poor, and the phenomenon of undercutting occurs on the side wall; if the phosphoric acid is adopted for etching alone, the surface flatness of the sapphire substrate is better, but the side wall can not be vertically deep but is in trapezoidal distribution, and undercutting does not occur. The utility model adopts a certain proportion of H2SO4And H3PO4The formed etching solution is used for etching the patterned photoresist layer and thinning the substrate, so that a good etching effect can be obtained.
The etching depth of the pattern indentation part plays an important role in the light emitting angle of the chip, the deeper the etching depth is, the more the light emitting from the side surface can be reduced, but the too deep etching depth can easily cause the hidden crack and the fragment of the chip.
Preferably, the etching depth of the pattern indentation is 1.3-2.6% of the thickness of the thinned substrate 10, and more preferably, the etching depth of the pattern indentation is 2% of the thickness of the thinned substrate.
Specifically, the etching depth of the pattern indentation part is 2-4 mu m
And fifthly, forming a reflecting layer on the thinned substrate and the pattern concave part.
The utility model discloses a reflection stratum is used for reflecting the light that the active layer sent to improve the positive light-emitting efficiency of chip. In order to cooperate the utility model discloses a figure indentation reduces the side light-emitting, the utility model discloses a certain difference exists with the structure of current reflection stratum in reflection stratum. Specifically, the present invention defines the thickness of each layer in the reflective layer to cooperate with the reflected wavelength and the pattern indentation. The reflective layer is composed of two materials with different refractive indexes which are alternately arranged, and the optical thickness of each material is 1/4 of the central reflection wavelength. Preferably, the reflective layer is made of SiO2And TiO2But is not limited thereto.
The above disclosure is only a preferred embodiment of the present invention, and certainly should not be taken as limiting the scope of the invention, which is defined by the claims and their equivalents.
Claims (6)
1. The utility model provides a reduce LED chip of side light-emitting, includes attenuate substrate, reflector layer and light emitting structure, its characterized in that, the attenuate substrate includes openly and the back, light emitting structure locates on the front of attenuate substrate, the back of attenuate substrate is equipped with the concave portion of figure, the sculpture degree of depth of the concave portion of figure is 1.3% -2.6% of attenuate substrate thickness, the reflector layer is located on the back of attenuate substrate and the concave portion of figure.
2. The LED chip of claim 1, wherein the shape of the indentation is square, rectangular, circular, or hexagonal;
the pattern indentation is located at an edge of the thinned substrate.
3. The LED chip with the reduced side light emission as claimed in claim 1, wherein the etching depth of the pattern recess is 2-4 μm.
4. The LED chip of claim 1, wherein the light emitting structure comprises a first semiconductor layer disposed on the front surface of the thinned substrate, an active layer and a first electrode disposed on the first semiconductor layer, a second semiconductor layer disposed on the active layer, and a second electrode disposed on the second semiconductor layer.
5. The LED chip of claim 1, wherein said reflective layer is comprised of two alternating layers of materials having different refractive indices, each layer having an optical thickness of 1/4 times the central reflection wavelength.
6. The LED chip of claim 1, wherein said reflective layer is made of SiO2And TiO2Are formed alternately.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920987790.5U CN209981263U (en) | 2019-06-26 | 2019-06-26 | LED chip capable of reducing side light emission |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920987790.5U CN209981263U (en) | 2019-06-26 | 2019-06-26 | LED chip capable of reducing side light emission |
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| CN209981263U true CN209981263U (en) | 2020-01-21 |
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| CN201920987790.5U Active CN209981263U (en) | 2019-06-26 | 2019-06-26 | LED chip capable of reducing side light emission |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110246940A (en) * | 2019-06-26 | 2019-09-17 | 佛山市国星半导体技术有限公司 | A kind of reduction side goes out LED chip of light and preparation method thereof |
| CN117096238A (en) * | 2023-10-18 | 2023-11-21 | 江西兆驰半导体有限公司 | Composite substrate, preparation method thereof and LED chip |
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2019
- 2019-06-26 CN CN201920987790.5U patent/CN209981263U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110246940A (en) * | 2019-06-26 | 2019-09-17 | 佛山市国星半导体技术有限公司 | A kind of reduction side goes out LED chip of light and preparation method thereof |
| CN117096238A (en) * | 2023-10-18 | 2023-11-21 | 江西兆驰半导体有限公司 | Composite substrate, preparation method thereof and LED chip |
| CN117096238B (en) * | 2023-10-18 | 2024-04-09 | 江西兆驰半导体有限公司 | Composite substrate, preparation method thereof and LED chip |
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