CN209981234U - Planar near-infrared photoelectric detector based on Tamm plasma - Google Patents
Planar near-infrared photoelectric detector based on Tamm plasma Download PDFInfo
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- CN209981234U CN209981234U CN201921298301.1U CN201921298301U CN209981234U CN 209981234 U CN209981234 U CN 209981234U CN 201921298301 U CN201921298301 U CN 201921298301U CN 209981234 U CN209981234 U CN 209981234U
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- 239000010408 film Substances 0.000 claims abstract description 43
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 31
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 29
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 15
- 239000004408 titanium dioxide Substances 0.000 claims abstract description 15
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 239000011135 tin Substances 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 239000011787 zinc oxide Substances 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 239000005083 Zinc sulfide Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 3
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910001930 tungsten oxide Inorganic materials 0.000 claims description 3
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 3
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 3
- 238000010521 absorption reaction Methods 0.000 abstract description 7
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- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005034 decoration Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000002070 nanowire Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 229910001922 gold oxide Inorganic materials 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
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- 238000001782 photodegradation Methods 0.000 description 1
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- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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Abstract
The utility model provides a planar near infrared photoelectric detector based on Tamm plasma, which comprises a silicon dioxide substrate, a Bragg reflector and a metal film; the Bragg reflector and the metal film are sequentially arranged on the silicon dioxide substrate; the Bragg reflector is formed by alternately arranging a high-refractive-index thin film layer and a low-refractive-index thin film layer from top to bottom, and the contact surface of the Bragg reflector and the metal thin film is the high-refractive-index thin film layer and is arranged as titanium dioxide; the top of the metal film is provided with a top conductive electrode, and the bottom of the high-refractive-index film layer on the top layer is provided with a grid-shaped bottom conductive electrode. The photon absorption rate, the transport efficiency of thermal electrons and the responsivity of the photoelectric detector are improved; the response wavelength of the detector can be changed and multi-narrow-band photoelectric detection can be realized through the thickness adjustment of the titanium dioxide adjacent to the metal film; just the utility model discloses simple structure, the production of being convenient for.
Description
Technical Field
The utility model relates to a photoelectric sensing technology field, concretely relates to plane near infrared photoelectric detector based on tamm plasma.
Background
The photoelectric detector based on the PN junction (or PIN junction or heterojunction) collects photogenerated carriers generated by light excitation by a formed built-in electric field. However, the selected semiconductor is transparent to electromagnetic bands with energies below its band gap, so a detector constructed using the semiconductor cannot achieve detection of bands with energies below its band gap. Unlike optoelectronic devices based on semiconductor light absorption, thermionic photodetectors can break through the semiconductor band gap limitation, and the thermions (holes) generated by metal thin film light absorption can directly enter the semiconductor conduction band (valence band) through interface charge transfer to generate macroscopic currents. Among typical semiconductor materials, titanium dioxide has found wide application in ultraviolet photoelectric detection systems based on semiconductor photoresponse due to its environmental protection, low cost, and resistance to photodegradation.
However, the wide bandgap properties of titanium dioxide (3.2 eV) essentially limit its application in the visible and near infrared bands. The metal is contacted with the semiconductor, the metal absorbs photons to generate hot electrons, and then the hot electrons overcome Schottky barrier and are transferred into the semiconductor, so that photoelectric detection in a visible near-infrared band can be realized.
However, due to the lack of an effective photo-electronic management strategy, the photo-responsivity of current thermionic devices is rather low. The general method for improving the performance of the thermionic device is to carry out nanostructured design on a metal film and improve the light absorption efficiency, the thermionic generation rate and the responsivity of a photoelectric detector of the metal film by exciting surface plasmon resonance. For example, in (application No. 201610617154.4) a polarization sensitive photodetector, a metal nanostructure is used to excite surface plasmon resonance, so that the photodetector responds differently to incident light of different polarizations, thereby realizing detection of polarization of the incident light. For example, in (application No. 201610291282.4) a self-driven schottky junction near infrared photodetector based on silicon nanowire array and its preparation method, the responsivity of copper light absorption and thermal electron photodetector is improved by coating a layer of metal copper film on the surface of the silicon nanowire.
However, although the rate of generation of thermal electrons can be improved by exciting surface plasmon resonance by using a metal micro-nano structure, the designed specific micro-nano structures are all sub-wavelength in size, have high requirements on nano processing technology and high cost, and are not beneficial to large-area batch preparation.
SUMMERY OF THE UTILITY MODEL
For the not high problem of the photoelectric detector's based on metal light absorption that solves existence among the prior art responsivity, the utility model provides a plane near infrared photoelectric detector based on tamm plasma adopts following technical scheme:
a plane near infrared photoelectric detector based on Tamm plasma comprises a silicon dioxide substrate, a Bragg reflector and a metal film;
the Bragg reflector and the metal film are sequentially arranged on the silicon dioxide substrate;
the Bragg reflector comprises a plurality of pairs of high-refractive-index thin film layers and low-refractive-index thin film layers, wherein the high-refractive-index thin film layers and the low-refractive-index thin film layers are alternately arranged from top to bottom, the top layer of the Bragg reflector is the high-refractive-index thin film layer, and the high-refractive-index thin film layer is made of titanium dioxide;
and a top conductive electrode is arranged on one side of the top of the metal film, and a grid-shaped bottom conductive electrode is arranged at the bottom of the high-refractive-index film layer positioned on the top layer of the Bragg reflector.
In the above solution, the metal film is located at the uppermost layer, the silicon dioxide substrate is the lowermost layer, and the "upper and lower" herein is merely a description of the positional relationship between the respective components, and does not limit the state of the overall structure.
The working principle and the effect of the scheme are as follows: the utility model discloses a plane near infrared photoelectric detector based on tamm plasma adopts metal material as the light-absorbing layer, produces the hot electron of high energy behind the metal film absorption photon, and the hot electron is collected in crossing the schottky junction entering titanium dioxide conduction band that metal film and adjacent titanium dioxide formed, produces the current response. The optical resonance of Tamm plasma excited by the metal film and the Bragg reflector is utilized to localize an electric field at the interface of the metal film and the Bragg reflector, so that the absorption rate of the metal film to photons is greatly improved, the response wavelength of the detector can be adjusted by changing the thickness of titanium dioxide in contact with the metal film, and the multi-narrow-band photoelectric detection is realized.
The metal film is one of gold, silver, titanium, platinum, tin, palladium, nickel or chromium or metal nitride thereof, the thickness of the metal film is 5 ~ 100nm, the thickness of the metal film is 5 ~ 100nm, which is equivalent to the mean free path of hot electrons.
Further, the number of pairs of the high refractive index thin film layer and the low refractive index thin film layer was 3 ~ 20.
Further, the thickness of the high refractive index thin film layer on top of the bragg reflector is 10 ~ 2000 nm.
Further, the high refractive index thin film layer is replaced with: zinc oxide, silicon nitride, zinc sulfide, indium tin oxide, and tungsten oxide.
Further, the low-refractive-index thin film layer is made of silicon dioxide, aluminum oxide or magnesium fluoride.
Drawings
Fig. 1 is a schematic structural diagram of an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a bottom conductive electrode in an embodiment of the present invention;
fig. 3 is a graph comparing the optical response of a photodetector without a bragg reflector under non-polarized light incidence according to an embodiment of the present invention;
FIG. 4 is a graph comparing electrochemical response of an embodiment of the present invention with a gold/titanium dioxide planar photodetector without the introduction of a Bragg reflector
Fig. 5 is a schematic diagram of the optical absorption rate and the electrical responsivity of the embodiment of the present invention when the thickness of the titanium dioxide film adjacent to the metal thin film layer is 1900 nm;
fig. 6 is a schematic diagram of the electrical response of the transverse magnetic wave (TM, perpendicular incidence plane in the electric field) and the transverse electric wave (TE, in the incidence plane in the electric field) at different incidence angles according to the embodiment of the present invention.
In the figure: 1-silicon dioxide substrate, 2-Bragg reflector, 3-metal film, 4-top conductive electrode, 5-bottom conductive electrode.
Detailed Description
In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the drawings of the embodiments of the present invention are combined below to clearly and completely describe the technical solution of the embodiments of the present invention. It is to be understood that the embodiments described are only some of the embodiments of the present invention, and not all of them. All other embodiments, which can be derived from the description of the embodiments of the present invention by a person skilled in the art, are within the scope of the present invention.
The technical solution of the present invention will be further described in detail with reference to the accompanying drawings.
As shown in fig. 1-2, a planar near-infrared photodetector based on talm plasma comprises a silicon dioxide substrate 1, a bragg reflector 2 and a metal thin film 3;
specifically, a Bragg reflector 2 and a metal film 3 are sequentially arranged on a silicon dioxide substrate 1;
the Bragg reflector 2 comprises a plurality of pairs of high-refractive-index thin film layers and low-refractive-index thin film layers, the high-refractive-index thin film layers and the low-refractive-index thin film layers are alternately arranged from top to bottom, and the contact surface between the Bragg reflector 2 and the metal thin film 3 is the high-refractive-index thin film layer;
the top layer of the Bragg reflector is a high-refractive-index thin film layer, and the material of the high-refractive-index thin film layer is titanium dioxide;
a multilayer film structure of a low-refractive-index film layer and a high-refractive-index film layer is arranged on the silicon dioxide substrate 1 through a magnetron sputtering method;
the metal film 3 is used for absorbing photons and generating hot electrons, a top conductive electrode 4 is arranged on one side of the top of the metal film 3, and a grid-shaped bottom conductive electrode 5 is arranged at the bottom of the high-refractive-index film layer positioned on the top layer of the Bragg reflector 2;
the metal film 3 and the Bragg reflector 2 can jointly act to excite Tamm plasma optical resonance, so that an electric field is localized at the interface of the metal film 3 and the Bragg reflector 2, and the absorption rate of the metal film 3 to photons is greatly improved.
Preferably, the metal thin film 3 is one of gold, silver, titanium, platinum, tin, palladium, nickel or chromium, and the thickness of the metal thin film 3 is 5 ~ 100nm, the response wavelength of the photodetector can be changed by adjusting the thickness of the semiconductor layer adjacent to the metal.
Optionally, the metal thin film 3 is one of titanium, platinum, tin, palladium, nickel, and chromium, or a metal nitride thereof.
In some embodiments of the present invention, the logarithm of the high refractive index thin film layer and the low refractive index thin film layer is 3 ~ 20, and the response wavelength of the photodetector is changed by adjusting the thickness of the titanium dioxide layer adjacent to the metal, so that the use is convenient and flexible.
In other embodiments of the present invention, the thickness of the high refractive index thin film layer on top of the bragg reflector 2 is 10 ~ 2000nm, and the thickness of the high refractive index thin film layer can be adjusted according to specific requirements during use, so as to realize multi-narrow-band photodetection.
In one embodiment of the present invention, the high refractive index thin film layer is zinc oxide, silicon nitride, zinc sulfide or titanium dioxide.
In another embodiment of the present invention, the low refractive index thin film layer is silicon dioxide, aluminum oxide or magnesium fluoride.
Preferably, the titanium dioxide adjacent to the top metal may be zinc oxide, titanium oxide, indium tin oxide, tungsten oxide.
Based on the rigorous coupled wave analysis, as shown in fig. 3, it shows the optical response of the photodetector composed of the metal thin film 3 with the thickness of 30nm, the high refractive index thin film layer, the bragg reflector 2 with the low refractive index thin film layer number of 9 and the silicon dioxide substrate 1 under the incidence of unpolarized light, where the meaning of unpolarized light is in the plane perpendicular to the propagation direction, including transverse vibration in all possible directions, and having the same amplitude on average in any direction, the absorption of the photodetector to the light of 890 ~ 900nm band is around 90%, the photons absorbed by the metal thin film 3 are converted into thermal electrons, and are injected into the high refractive index thin film layer across the interface barrier of the metal thin film 3 and the high refractive index thin film layer, and finally collected by the bottom conductive electrode 5 to generate observable current.
As shown in FIG. 4, the calculated value of the responsivity of the narrow-band photodetector of the present design can reach 0.75 mA/W, which is improved by 35 times compared with the responsivity of the photodetector without the Bragg reflector 2.
As shown in fig. 5, this figure shows that three light absorption peaks exist in the range of 800 ~ 1000 nm at a high refractive index thin film layer adjacent to the metal thin film 3 having a thickness of 1900nm, and multi-narrow band photodetection is achieved.
As shown in fig. 6, this figure shows that as the angle of incidence is varied, the photodetector operating wavelength is blue shifted with increasing angle of incidence, and its responsivity is slightly increased compared to 0 degrees of incidence.
The utility model discloses a plane near infrared photoelectric detector based on tamm plasma adopts metal material as the light-absorbing layer, utilizes the optical resonance of tamm plasma that metal film and Bragg reflector arouse, with the electric field local in the interface department of metal film and Bragg reflector, has improved the absorption rate of metal film to the photon widely; the metal film with the thickness equivalent to the mean free path of the thermal electrons is adopted, so that the transport efficiency of the thermal electrons and the responsivity of the photoelectric detector are greatly improved.
The foregoing is a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, a plurality of improvements and decorations can be made without departing from the principle of the present invention, and these improvements and decorations should also be regarded as the protection scope of the present invention.
Claims (7)
1. A plane near infrared photoelectric detector based on Tamm plasma is characterized by comprising a silicon dioxide substrate, a Bragg reflector and a metal film;
the Bragg reflector and the metal film are sequentially arranged on the silicon dioxide substrate;
the Bragg reflector comprises a plurality of pairs of high-refractive-index thin film layers and low-refractive-index thin film layers, wherein the high-refractive-index thin film layers and the low-refractive-index thin film layers are alternately arranged from top to bottom, the top layer of the Bragg reflector is the high-refractive-index thin film layer, and the high-refractive-index thin film layer is made of titanium dioxide;
and a top conductive electrode is arranged on one side of the top of the metal film, and a grid-shaped bottom conductive electrode is arranged at the bottom of the high-refractive-index film layer positioned on the top layer of the Bragg reflector.
2. The Tamm plasma-based planar near-infrared photodetector of claim 1, wherein the metal thin film is one of gold, silver, titanium, platinum, tin, palladium, nickel, chromium, or a metal nitride thereof.
3. The Tamm plasma-based planar near-infrared photodetector of claim 2, wherein the metal thin film has a thickness of 5 to 100 nm.
4. The Tamm plasma-based planar near-infrared photodetector of claim 1, wherein: the logarithm of the high refractive index thin film layer and the logarithm of the low refractive index thin film layer are 3-20.
5. The Tamm plasma-based planar near-infrared photodetector of claim 1, wherein the thickness of the high refractive index thin film layer on top of the Bragg reflector is 10-2000 nm.
6. The Tamm plasma-based planar near-infrared photodetector of claim 1, wherein the high index thin film layer is replaced with: zinc oxide, silicon nitride, zinc sulfide, indium tin oxide, and tungsten oxide.
7. The Tamm plasma-based planar near-infrared photodetector of claim 1, wherein: the low-refractive-index film layer is made of silicon dioxide, aluminum oxide or magnesium fluoride.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921298301.1U CN209981234U (en) | 2019-08-12 | 2019-08-12 | Planar near-infrared photoelectric detector based on Tamm plasma |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921298301.1U CN209981234U (en) | 2019-08-12 | 2019-08-12 | Planar near-infrared photoelectric detector based on Tamm plasma |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110429144A (en) * | 2019-08-12 | 2019-11-08 | 苏州大学 | A kind of plane near infrared photodetector based on tower nurse plasma |
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2019
- 2019-08-12 CN CN201921298301.1U patent/CN209981234U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110429144A (en) * | 2019-08-12 | 2019-11-08 | 苏州大学 | A kind of plane near infrared photodetector based on tower nurse plasma |
| CN110429144B (en) * | 2019-08-12 | 2024-05-28 | 苏州大学 | Planar near infrared photoelectric detector based on Tamu plasma |
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