TWM517475U - High power solar cell module - Google Patents

Abstract

A high power solar cell module including a cover plate, a back plate, a first encapsulation, a second encapsulation, a plurality of P type passivated emitter rear contact solar cells and a plurality of reflective connection ribbons is provided. Each of the P type passivated emitter rear contact solar cells has a light receiving surface and a non-light receiving surface opposite to the light receiving surface. The reflective connection ribbons are located between the first encapsulation and the second encapsulation, and any two adjacent P type passivated emitter rear contact solar cells are connected in series along a first direction by four of the reflective connection ribbons. Each of the reflective connection ribbons has a plurality of triangle columnar structures. Each of the triangle columnar structures points the cover plate and extends along the first direction.

Description

High power solar module

The present invention relates to a solar cell module, and in particular to a high power solar cell module.

Solar cells can convert solar energy into electrical energy, and do not generate environmentally harmful substances such as carbon dioxide or nitride during photoelectric conversion. Therefore, solar cells have become a very important and popular part of renewable energy research in recent years.

The types of solar cells include single crystal germanium, polycrystalline germanium, amorphous germanium, thin films, and dye solar cells. In the case of a single crystal germanium solar cell, it includes an N-type solar cell and a P-type solar cell. N-type solar cells have relatively high photoelectric conversion efficiency, and solar cells composed of 60 6吋N-type solar cells can reach more than 300 watts of power. However, the cost of the N-type solar cell is relatively expensive, and there are problems such as complicated process and low yield. Compared with N-type solar cells, P-type solar cells are relatively low in cost, relatively simple in process, and relatively high in yield. However, the photoelectric conversion efficiency of the P-type solar cell is not as good as that of the N-type solar cell, so the output power of the P-type solar cell is generally lower than that of the N-type solar cell. Although the prior art has improved the output power of the P-type solar cell, there is still room for improvement in such improved effects.

The novel creation provides a high power solar cell module with high output power.

The invention relates to a high-power solar battery module, which comprises a cover plate, a back plate, a first encapsulation film, a second encapsulation film, a plurality of Passivated Emitter Rear Contact (PERC) and a plurality of reflections. Connection belt. The back plate is opposite to the cover plate. The first encapsulation film is located between the cover plate and the back plate. The second encapsulation film is located between the first encapsulation film and the back plate. The P-type back passivation solar cell is located between the first package film and the second package film, and each P-type back passivation solar cell has a light receiving surface and a non-light receiving surface opposite to the light receiving surface. The reflective connecting strip is located between the first encapsulating film and the second encapsulating film, and any two adjacent P-type back passivated solar cells are connected in series in the first direction by four reflective connecting strips. Each of the reflective connecting strips has a plurality of triangular columnar structures. Each triangular columnar structure points toward the cover plate and extends in the first direction.

In an embodiment of the present invention, the surface of the back plate facing the cover plate has a plurality of microstructures. The microstructure reflects the beam incident from the cover plate into the high power solar cell module and causes the beam to undergo a total inner reflection on the outer surface of the cover.

In an embodiment of the present invention, the first encapsulating film and the second encapsulating film have a light transmittance of more than 70% for a light beam having a wavelength in the range of 250 nm to 340 nm.

In an embodiment of the present invention, each of the P-type back passivation solar cells includes a P-type doped substrate, an N-type doped layer, a first electrode layer, an insulating layer, a second electrode layer, and a back electrode layer. The P-type doped substrate has a first surface and a second surface. The first surface is located between the light receiving surface and the non-light receiving surface. The second surface is located between the first surface and the non-light receiving surface. An N-type doped layer is disposed on the first surface. The first electrode layer is disposed on the N-type doped layer and includes four bus electrodes. Each of the reflective connecting strips is located on one of the bus electrodes. The insulating layer is disposed on the second surface and has a plurality of openings. The back electrode layer is disposed in at least a portion of the opening.

In an embodiment of the present invention, each of the P-type back passivation solar cells further includes an anti-reflection layer. The anti-reflection layer is disposed on the N-type doped layer and located in a region other than the first electrode layer.

In an embodiment of the present invention, the back electrode layer is further disposed on the insulating layer.

In an embodiment of the present invention, the insulating layer includes an oxide layer, a nitride layer, or a laminate of the two.

In an embodiment of the present invention, the width of each of the reflective connecting strips described above falls within the range of 0.8 mm to 1.5 mm, and the thickness of each of the reflective connecting strips falls within the range of 0.15 mm to 0.3 mm.

In an embodiment of the present invention, the reflective connecting strips are respectively fixed to the P-type back passivated solar cell through a thermosetting conductive adhesive layer.

In an embodiment of the present invention, each of the reflective connecting strips further has a reflective layer. The reflective layer is disposed on the triangular columnar structure, and the reflectance of the reflective layer is higher than 95%.

In an embodiment of the present invention, the material of the reflective layer includes silver, and the thickness of the reflective layer falls within a range of 0.5 μm to 10 μm.

Based on the above, since the P-type back passivation solar cell adopts a passivated emitter back contact structure to help improve the photoelectric conversion efficiency of the P-type back passivation solar cell, and the number of reflective connecting strips and the design of the triangular column structure contribute to The utilization rate of light is improved, and therefore, the high-power solar battery module created by the present invention can have high output power.

The above described features and advantages of the present invention will become more apparent and understood from the following description.

1 is a high power solar energy according to an embodiment of the present invention. A schematic cross-sectional view of a battery module. 2 is a schematic cross-sectional view of the P-type back passivated solar cell of FIG. 1. 3 is a front elevational view of the P-type back passivated solar cell of FIG. 1. 4 is a rear perspective view of the high power solar cell module of FIG. 1, and FIG. 4 omits the second encapsulation film and the back plate of FIG. FIG. 5 is a partially enlarged schematic view of the P-type back passivation solar cell of FIG. 2. FIG. Referring to FIG. 1 to FIG. 5 , the high-power solar cell module 100 includes a cover plate 110 , a back plate 120 , a first encapsulation film 130 , a second encapsulation film 140 , a plurality of P-type back passivation solar cells 150 , and a plurality of reflective The strap 160 is attached.

The cover plate 110 is adapted to protect the P-type back passivated solar cell 150 located therebelow to prevent the P-type back passivated solar cell 150 from being damaged by an external force. In addition, the material of the cover plate 110 is made of a transparent material to avoid affecting the P-type back passivation solar cell 150 from absorbing the light beam L from the outside. The transparent material generally refers to a material that generally has a high light transmittance, and is not used to define a material having a light transmittance of 100%. For example, the cover plate 110 may be a low-iron glass substrate, but is not limited thereto.

The back plate 120 is opposite to the cover plate 110, and is adapted to protect the P-type back passivation solar cell 150 located above it to prevent the P-type back passivation solar cell 150 from being damaged by an external force. In this embodiment, the back plate 120 can adopt a reflective back plate to improve light utilization efficiency. For example, the surface of the back plate 120 facing the cover plate 110 (that is, the surface of the back plate 120 contacting the second encapsulation film 140) may have a plurality of microstructures (not shown). The microstructure is adapted to reflect the light beam L incident from the cover plate 110 into the high power solar cell module 100, and to transmit the light beam L toward the cover plate 110. The light beam L can be in the cover plate 110 The surface is totally reflected and incident on the P-type back passivation solar cell 150. As such, it helps to increase the output power of the high power solar cell module 100.

The first encapsulation film 130 is located between the cover plate 110 and the back plate 120. The second encapsulation film 140 is located between the first encapsulation film 130 and the backing plate 120. Further, the first encapsulation film 130 and the second encapsulation film 140 are respectively located on opposite surfaces of the P-type back passivation solar cell 150 for sealing the P-type back passivation solar cell 150. The material of the first encapsulating film 130 and the second encapsulating film 140 is made of a material suitable for blocking moisture, oxygen in the environment. In addition, the materials of the first encapsulation film 130 and the second encapsulation film 140 may be made of a material having high light transmittance, and may be a material transparent to ultraviolet light. In this way, the probability that the light beam L penetrates the first encapsulation film 130 and is transmitted to the P-type back passivation solar cell 150 can be improved, and the light beam L reflected by the back plate 120 is transmitted through the second encapsulation film 140 and transmitted to the P-type back passivation. The probability of solar cell 150. For example, the first package film 130 and the second package film 140 have a light transmittance of more than 70% for a light beam having a wavelength in the range of 250 nm to 340 nm. In addition, the material of the first encapsulation film 130 and the second encapsulation film 140 may be Ethylene Vinyl Acetate (EVA), Poly Vinyl Butyral (PVB), Polyolefin, Polyurethane. (Polyurethane), Silicone (Silicone) or transparent polymer insulation adhesive.

The P-type back passivation solar cell 150 is located between the first package film 130 and the second package film 140, and each of the P-type back passivation solar cells 150 has a light receiving surface SA and a non-light receiving surface SB opposite to the light receiving surface SA, and the light receiving surface The SA is located between the cover plate 110 and the non-light receiving surface SB.

2 illustrates one embodiment of a P-type back passivated solar cell 150, but the structure of the P-type back passivated solar cell 150 is not limited to that illustrated in FIG. As shown in FIG. 2, each P-type back passivation solar cell 150 includes a P-type doped substrate 151, an N-type doped layer 152, a first electrode layer 153, an insulating layer 154, a second electrode layer 155, and a back electrode layer 156.

The P-type doped substrate 151 has a first surface S1 and a second surface S2, wherein the first surface S1 is located between the light-receiving surface SA and the non-light-receiving surface SB, and the second surface s2 is located at the first surface S1 and the non-light-receiving surface SB. between. At least one of the first surface S1 and the second surface S2 may selectively form a textured surface (as shown by the serrated surface in FIG. 2) to increase the absorptivity of the light beam L. 2 shows that the first surface S1 is a woven surface, and the second surface S2 is a flat surface, but the novel creation is not limited thereto. For example, in another embodiment, the first surface S1 and the second surface S2 may be the same as the woven surface.

The N-type doped layer 152 is disposed on the first surface S1, and the N-type doped layer 152 is, for example, conformed to the first surface S1. That is, the N-type doped layer 152 corresponds to the textured surface undulation.

The first electrode layer 153 is disposed on the N-type doping layer 152. Since the first electrode layer 153 is located on the side of the light receiving surface SA, the first electrode layer 153 may have a patterned design to reduce the ratio of the first electrode layer 153 shielding the light beam L. FIG. 3 illustrates one embodiment of the first electrode layer 153, but is not limited thereto. As shown in FIG. 3, the first electrode layer 153 may include four bus electrodes BE (busbar) extending in the first direction D1 and a plurality of finger electrodes FE extending from the bus electrode BE. The finger electrodes FE extend, for example, in the second direction D2, respectively. The first direction D1 and the second direction D2 are, for example, perpendicular to each other, but are not limited thereto.

The insulating layer 154 is disposed on the second surface S2 and has a plurality of openings O. The insulating layer 154 may include an oxide layer, a nitride layer, or a laminate of the two. The oxide layer may be an aluminum oxide layer or a tantalum oxide layer, and the nitride layer may be a tantalum nitride layer, but is not limited thereto.

The second electrode layer 155 is disposed in the partial opening O, and the back electrode layer 156 is disposed in the remaining openings O. As shown in FIG. 2, the second electrode layer 155 is disposed, for example, in the opening O of the corresponding bus electrode BE, wherein the second electrode layer 155 may have a plurality of bus electrodes BE', and the bus electrode BE' and the bus electrode BE may have Similar pattern design, but not limited to this. In the present embodiment, the back electrode layer 156 may be further disposed on the insulating layer 154. With a warming process, the back electrode layer 156 can form a local back surface field (Local BSF) LB adjacent to the opening O at the second surface S2. In this way, the collection of carriers can be increased and photons that are not absorbed can be recovered, thereby improving the photoelectric conversion efficiency. In another embodiment, a plurality of unillustrated recesses may be formed at the corresponding opening O of the second surface S2, and the back electrode layer 156 may be filled into the recesses, thus also contributing to the formation of a local back surface electric field.

The P-type back passivation solar cell 150 may further include an anti-reflection layer 157. The anti-reflection layer 157 is disposed on the N-type doped layer 152 and located outside the first electrode layer 153 to increase the absorptance of the light beam L. According to different needs, the P-type back passivation solar cell 150 may further include other film layers, which will not be described herein.

The reflective connecting strip 160 is located between the first encapsulating film 130 and the second encapsulating film 140 for connecting the P-type back passivation solar cell 150 in series along the first direction D1 to form a plurality of battery strings R arranged in the second direction D2. (shown in Figure 4). Further, as shown in FIG. 2, any two adjacent P-type back passivation solar cells 150 are connected in series by the four reflective connecting strips 160 in the first direction D1. Further, a portion of each of the reflective connecting strips 160 is disposed on one of the bus electrodes BE such that the bus electrodes BE and the reflective connecting strips 160 are disposed in a one-to-one relationship. In addition, another portion of each of the reflective connecting strips 160 is disposed on one of the bus electrodes BE' such that the bus electrodes BE' and the reflective connecting strips 160 are also disposed in a one-to-one relationship. In the present embodiment, the width W160 of each of the reflective connecting strips 160 may fall within the range of 0.8 mm to 1.5 mm, and the thickness H160 of each of the reflective connecting strips 160 may fall within the range of 0.15 mm to 0.3 mm. The widths WBE and WBE' of the bus electrodes BE, BE' may be the same as the width W160 of the reflective connecting strip 160, but are not limited thereto. In another embodiment, the widths WBE, WBE' of the bus electrodes BE, BE' may be slightly smaller than the width W160 of the reflective connecting strip 160.

As shown in FIG. 4, the high power solar cell module 100 may further include a plurality of bus bars 170 to connect the battery strings R in series. According to different needs, the high-power solar battery module 100 may further include other components known in the art, such as a bypass diode, a junction box, etc., and will not be described herein.

As shown in FIG. 5, each of the reflective connecting strips 160 has a plurality of triangular columnar structures 162. Each of the triangular columnar structures 162 is directed toward the cover plate 110 and extends in the first direction D1. In this embodiment, each of the triangular columnar structures 162 includes, for example, an isosceles triangle, and the apex angle θ of each of the triangular columnar structures 162 falls within a range of 60 degrees to 90 degrees, for example, but is not limited thereto.

The design of the apex angle θ can be matched with the number (four) of the reflective connecting strips 160 corresponding to the respective P-type back passivated solar cells 150 to optimize the utilization of light. Specifically, the light beam L irradiated to the reflective connecting strip 160 is sequentially transmitted to the cover plate 110 via the reflection of the triangular columnar structure 162, totally reflected on the outer surface S3 of the cover plate 110, and transmitted to the P-type back passivated solar cell 150. Moreover, it is absorbed by the P-type back passivation solar cell 150, thereby contributing to the improvement of light utilization efficiency. Whether or not the totally reflected light beam L can be transmitted to the P-type back passivation solar cell 150 is related to the number of reflective connecting strips 160 and the design of the apex angle θ. Therefore, by modulating the number (four) of the reflective connecting strips 160 corresponding to the P-type back passivation solar cells 150 and the design of the triangular columnar structure, the present embodiment can optimize the utilization of light and thereby improve The output power of the high power solar cell module 100.

For the solar cell modules of 60 P-type solar cells currently on the market, the output power is about 280 watts. However, with the above design, the output power of the high-power solar battery module 100 of the present embodiment can be up to 300 watts (up to 7.1% of output power) through actual measurement, and the output power is currently 60 P-type solar cells. The solar cell module cannot be achieved.

In order to tightly bond the reflective connecting strip 160 to the P-type back passivation solar cell 150, the reflective connecting strip 160 may be attached to the P-type back passivated solar cell 150 through a thermosetting conductive adhesive layer AD, respectively. Specifically, the thermosetting conductive adhesive layer AD is located between the reflective connecting strip 160 and the bus electrode BE and between the reflective connecting strip 160 and the bus electrode BE'. The thermosetting conductive adhesive layer AD may be any adhesive layer containing conductive particles and curable by a temperature rising process. For example, the thermosetting conductive adhesive layer AD may be the conductive paste described in Taiwan Patent Publication No. I284328, but is not limited thereto.

In addition, each of the reflective connecting strips 160 may further have a reflective layer 164 to further enhance the reflectivity of the reflective connecting strip 160 (since the reflective layer 164 is very thin, so only shown in FIG. 5). The reflective layer 164 is disposed on the triangular columnar structure 162, and the reflectance of the reflective layer 164 is higher than 95%. For example, the material of the reflective layer 164 includes aluminum, and the thickness H164 of the reflective layer 164 falls, for example, in the range of 0.5 μm to 10 μm.

In summary, the P-type back passivation solar cell adopts a passivated emitter back contact structure to help improve the photoelectric conversion efficiency of the P-type back passivation solar cell, and the number of reflective connecting strips and the design of the triangular column structure are Helping to improve the utilization of light, the high-power solar cell module created by the present invention can have high output power.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the novel creation, and any person skilled in the art can make some changes without departing from the spirit and scope of the novel creation. Retouching, the scope of protection of this new creation is subject to the definition of the scope of the patent application attached.

100‧‧‧High power solar battery module
110‧‧‧ cover
120‧‧‧back board
130‧‧‧First encapsulation film
140‧‧‧Second encapsulation film
150‧‧‧P type back passivated solar cell
151‧‧‧P type doped substrate
152‧‧‧N-doped layer
153‧‧‧First electrode layer
154‧‧‧Insulation
155‧‧‧Second electrode layer
156‧‧‧Back electrode layer
157‧‧‧Anti-reflective layer
160‧‧‧Reflective connection belt
162‧‧‧Triangular columnar structure
164‧‧‧reflective layer
170‧‧‧Confluence zone
AD‧‧‧ thermosetting conductive adhesive layer
BE, BE'‧‧‧ bus electrode
D1‧‧‧ first direction
D2‧‧‧ second direction
FE‧‧‧ finger electrode
H160, H164‧‧ thickness
L‧‧‧beam
LB‧‧‧local back surface electric field
O‧‧‧ openings
R‧‧‧ battery string
S1‧‧‧ first surface
S2‧‧‧ second surface
S3‧‧‧ outer surface
SA‧‧‧Stained surface
SB‧‧‧ non-lighted surface
W160, WBE, WBE'‧‧‧width θ‧‧‧ top angle

1 is a cross-sectional view of a high power solar cell module in accordance with an embodiment of the present invention.

2 is a schematic cross-sectional view of the P-type back passivated solar cell of FIG. 1.

3 is a front elevational view of the P-type back passivated solar cell of FIG. 1.

4 is a schematic rear view of the high power solar cell module of FIG. 1.

FIG. 5 is a partially enlarged schematic view of the P-type back passivation solar cell of FIG. 2. FIG.

110‧‧‧ cover

120‧‧‧back board

130‧‧‧First encapsulation film

140‧‧‧Second encapsulation film

150‧‧‧P type back passivated solar cell

151‧‧‧P type doped substrate

152‧‧‧N-doped layer

153‧‧‧First electrode layer

154‧‧‧Insulation

155‧‧‧Second electrode layer

156‧‧‧Back electrode layer

157‧‧‧Anti-reflective layer

160‧‧‧Reflective connection belt

AD‧‧‧ thermosetting conductive adhesive layer

BE, BE'‧‧‧ bus electrode

D1‧‧‧ first direction

D2‧‧‧ second direction

H160‧‧‧ thickness

LB‧‧‧local back surface electric field

O‧‧‧ openings

S1‧‧‧ first surface

S2‧‧‧ second surface

SA‧‧‧Stained surface

SB‧‧‧ non-lighted surface

W160, WBE, WBE’‧‧‧Width

Claims (11)

A high-power solar cell module comprising: a cover plate; a back plate opposite to the cover plate; a first encapsulation film located between the cover plate and the back plate; and a second encapsulation film located at the Between a package film and the back plate; a plurality of P-type back passivation solar cells between the first package film and the second package film, and each of the P-type back passivation solar cells has a light receiving surface and a a non-light-receiving surface opposite to the light-receiving surface; and a plurality of reflective connecting strips between the first encapsulating film and the second encapsulating film, and any two adjacent P-type back passivated solar cells are reflected by four of them The connecting strips are connected in series in a first direction, and each of the reflective connecting strips has a plurality of triangular columnar structures, each of the triangular columnar structures pointing toward the cover plate and extending along the first direction. The high-power solar cell module according to claim 1, wherein the surface of the back plate facing the cover plate has a plurality of microstructures, and the microstructures are incident from the cover plate into the high-power solar battery module. A beam of light reflects and causes the beam to be totally reflected on the outer surface of the cover. The high power solar cell module according to claim 1, wherein the first encapsulating film and the second encapsulating film have a light transmittance of more than 70% for a light beam having a wavelength in a range of 250 nm to 340 nm. The high-power solar cell module according to claim 1, wherein each of the P-type back passivation solar cells comprises a P-type doped substrate and an N-type doping a layer, a first electrode layer, an insulating layer, a second electrode layer and a back electrode layer, the P-type doped substrate has a first surface and a second surface, the first surface is located on the light receiving surface and the non- Between the light receiving surfaces, the second surface is located between the first surface and the non-light receiving surface, the N-type doping layer is disposed on the first surface, and the first electrode layer is disposed on the N-type doping layer The method includes four bus electrodes, each of the reflective connecting strips is disposed on one of the bus electrodes, and the insulating layer is disposed on the second surface and has a plurality of openings, and the back electrode layer is disposed in at least a portion of the openings. The high-power solar cell module of claim 4, wherein each of the P-type back passivation solar cells further comprises an anti-reflection layer disposed on the N-type doped layer and located at the An area other than an electrode layer. The high power solar cell module of claim 4, wherein the back electrode layer is further disposed on the insulating layer. The high power solar cell module of claim 4, wherein the insulating layer comprises an oxide layer, a nitride layer or a laminate of the two. The high-power solar cell module according to claim 1, wherein the width of each of the reflective connecting strips falls within a range of 0.8 mm to 1.5 mm, and the thickness of each of the reflective connecting strips falls within 0.15 mm. To the range of 0.3mm. The high-power solar cell module according to claim 1, wherein the reflective connecting strips are respectively fixed on the P-type back passivation solar cells through a thermosetting conductive adhesive layer. The high-power solar cell module according to claim 1, wherein each of the reflective connecting strips further has a reflective layer disposed on the triangular columnar structures, and the reflective layer has a high reflectivity. At 95%. The high-power solar cell module according to claim 10, wherein the material of the reflective layer comprises silver, and the thickness of the reflective layer falls within a range of 0.5 μm to 10 μm.