CN209963017U - Structure for transferring micro-nano sample - Google Patents

Abstract

The utility model relates to the technical field of material microscopic experimental equipment, and provides a structure for transferring micro-nano samples, which comprises a carrying plate, a baffle plate and a base body; the carrying plate is connected with the baffle plate in an L shape, and one end of the carrying plate is connected with the base body; the loading plate is sequentially provided with a sample area, a transition area and an adhesion area along the direction close to the base body; the sample area is used for carrying a material block to be detected, and the bonding area is used for being connected with a target carrier. The structure for transferring the micro-nano sample provided by the embodiment of the utility model can avoid the bombardment, injection and sputtering damage generated by ion beam irradiation and the pollution during bonding deposition in the sample transferring process; the transition area can also avoid sputtering damage and pollution during cutting and deposition; the shape of the sample area can be set according to the shape of the material block to be detected, so that the transmission electron microscope in-situ mechanical platform based on the MEMS chip can realize more loading functions, and the MEMS chip in-situ mechanical platform can be applied to the wider material field.

Description

Structure for transferring micro-nano sample

Technical Field

The utility model relates to a microscopic experimental facilities technical field of material especially relates to a structure of sample is received a little in transfer.

Background

A Transmission Electron Microscope (TEM) can study the structure, composition, defects, etc. of materials on a micro-nano to sub-angstrom scale. The development of in-situ TEM technology in recent decades has greatly advanced the study of the microstructure-property relationship of materials. The TEM in-situ experiment refers to applying various external fields (including force, heat, electricity, light, etc.) to a sample in TEM, observing and recording the response process of the sample, and revealing the performance-structure relationship from nanometer and even sub-angstrom scale.

The TEM in situ experiment usually has special requirements for the size and shape of the sample, especially for various mechanical experiments. On the other hand, TEM in situ studies are typically directed to specific microstructures (e.g., specific phases, interfaces, defects, etc.) in the material. The focused ion beam dual beam system (SEM-FIB system) well meets the sample preparation requirements of in-situ TEM research. The SEM-FIB system integrates an electron gun, an ion gun, a gas deposition source, a precise three-dimensional moving mechanical probe and an intelligent precise sample table, and can perform fixed-point cutting, bonding, extraction, transfer, precise processing and thinning on a selected area of the surface of a material to be detected. The technology is called as a block sampling technology, has the characteristics of accurate positioning, high processing precision, high speed and the like, and is widely applied to TEM sample preparation.

The ultra-high positioning precision of the SEM-FIB system benefits from a stereoscopic view field formed by two-beam images of an electron beam and an ion beam with a certain angle, and the position of a certain point in an observation area in a three-dimensional space can be accurately positioned. However, ion beam irradiation causes ion bombardment damage, ion implantation contamination, and the like in a certain depth of the surface of the sample, and also causes sputtering to some extent to a position near the observation region. In the fixed point cutting, the influence on the area near the cutting point is larger due to the larger using beam current. In addition, deposition particles may adhere to the surface of the sample in the observation area during the gas deposition connection, causing contamination. TEM samples, however, need to be thin enough to be transparent to the electron beam and cannot withstand damage from direct ion beam irradiation, sputtering, and deposition particle attachment once processing is complete. For the above reasons, when preparing TEM samples by the bulk sampling technique, a thicker sample block to be measured is usually taken out, transferred and adhered to the final mounting position, and then subjected to final processing and thinning. And then no longer undergo ion beam observation.

On the other hand, the requirement of in-situ loading performance is also continuously raised, and with the continuous improvement of semiconductor processing precision and the rapid development of micro-electro-mechanical system (MEMS) drivers and sensors, the MEMS technology is more and more widely applied to the development of TEM in-situ experiment platforms. Research units and instrument companies all over the world successively develop MEMS chips capable of realizing force, heat and electricity application and successfully apply the MEMS chips to in-situ experimental research, such as PTP structures matched with nano-indentors PI-95 of Bruker company, heating chips produced by Denssolusions company, MEMS mechanical chips respectively and independently developed by Beijing university of industry, American northwest university and the like. However, since the MEMS chip is usually a closed structure, the sample carrying position is located inside the chip and surrounded by other structures around, and it is not possible to provide a sufficient field of view for subsequent focused ion beam processing and thinning, and it is difficult to prepare a sample having a shape and size meeting various in-situ experimental requirements.

Duchamp et al designed a method of mounting first and then thinning to prepare a heating sample when using a MEMS heating chip from DENSSOLUTIONS. The solution is to thin the MEMS chip at a certain angle away from the surface of the MEMS chip. However, for MEMS mechanical chips, the driving capability is very limited, and usually only a few microns of driving displacement can be provided along a certain direction. Therefore, the accuracy of sample mounting is required to be high. For compression type loading experiments, a compressed sample needs to be fixed in the moving path of the pressure head at a position close to the pressure head. The technical route of firstly carrying and then thinning is difficult to ensure proper distance.

For the reasons, in the prior art, most of in-situ TEM samples prepared by the MEMS chip are nanowire and thin film materials which do not need to be thinned subsequently, and in the transfer process using the SEM-FIB system, due to the lack of a structure of the TEM sample which can be safely transferred and processed under the ion beam, the two materials are damaged by bombardment, injection and sputtering during deposition, so that the MEMS in-situ mechanical platform cannot realize more loading functions and cannot be applied to a wider material field.

SUMMERY OF THE UTILITY MODEL

Technical problem to be solved

The embodiment of the utility model provides a structure of sample is received a little in the transfer to when solving among the prior art transfer receive a little sample, the sample can receive the bombardment when ion beam irradiation, cutting and deposit, pours into and sputter the damage into, makes MEMS normal position mechanics platform can't realize more loading functions, also can't use the technical problem in more extensive material field.

(II) technical scheme

In order to solve the technical problem, an embodiment of the utility model provides a structure for transferring micro-nano samples, which comprises a carrying plate, a baffle plate and a base body; the carrying plate is connected with the baffle plate to form an L shape, one end of the carrying plate is connected with the base body, and the base body is vertical to the carrying plate and the baffle plate; the loading plate is sequentially provided with a sample area, a transition area and an adhesion area along the direction close to the base body; the sample area is used for carrying a material block to be detected, the transition area is used for separating the sample area from the bonding area, and the bonding area is used for being connected with a target carrier.

Wherein a preset gap is reserved between the baffle and the base body; the carrying plate is also provided with a first supporting area; the first supporting area is positioned on one side of the sample area close to the baffle; and/or the object carrying plate is also provided with a second support area, and the second support area is positioned on one side of the sample area far away from the baffle plate.

The width d of the first supporting area, the height Hs of the baffle and the tilting angle alpha of the structure for transferring the micro-nano sample according to the experimental requirement of the transmission electron microscope in the long axis direction of the carrying plate meet the formula that d is larger than Hs and tan alpha.

Wherein, the width d of the first supporting area, the height Hs of the baffle, the width e of the sample area and the included angle beta between the electron beam and the ion beam in the used focused ion beam dual-beam system satisfy the formula d + e < Hs tan beta.

The length Ls of the baffle, the length Lc of the object carrying plate and the width c of the bonding area satisfy the formula Ls-Lc-c.

(III) advantageous effects

The embodiment of the utility model provides a structure of transferring micro-nano sample carries on the material piece to be measured through setting up the year thing board to shield the irradiation of ion beam through the baffle that links to each other with carrying the thing board, the bombardment that avoids receiving in the sample transfer process, pours into and sputter the damage; the shape of the sample area can be set according to the shape of the material block to be tested, so that the MEMS in-situ mechanical platform can realize more loading functions and can be applied to wider material fields; in addition, due to the existence of the base body, batch processing of the baffle plate and the carrying plate can be facilitated, and convenience is brought to subsequent use.

Drawings

Fig. 1 is a schematic view of an overall structure of an embodiment of a structure for transferring a micro-nano sample provided by the present invention;

fig. 2 is a schematic diagram of a shielding effect of an embodiment of a structure for transferring a micro-nano sample provided by the present invention;

fig. 3 is a front view of an embodiment of a structure for transferring micro-nano samples provided by the present invention;

fig. 4 is a left side view of an embodiment of a structure for transferring micro-nano samples provided by the present invention;

fig. 5 is a top view of an embodiment of a structure for transferring micro-nano samples provided by the present invention;

fig. 6 is a schematic diagram of batch preparation of the object carrying plate and the baffle by using twice semiconductor dry etching in an embodiment of the structure for transferring micro-nano samples provided by the utility model;

fig. 7 is a schematic view of an embodiment of a structure for transferring micro-nano samples according to the arrow direction in fig. 6 after etching;

fig. 8 is a schematic diagram of further processing by using a focused ion beam in an embodiment of the structure for transferring micro-nano samples provided by the present invention;

fig. 9 is a schematic diagram of a dual-field lower carrier plate separated from a substrate in an embodiment of a structure for transferring micro-nano samples provided by the present invention;

fig. 10 is a schematic view of a moving object carrying plate and a baffle under a double view field in an embodiment of the structure for transferring micro-nano samples provided by the present invention;

fig. 11 is a schematic diagram of connecting an adhesion region and a target carrier under a double-view field in an embodiment of a structure for transferring a micro-nano sample provided by the present invention;

fig. 12 is a schematic diagram of determining the center of a target sample under an ion beam view in an embodiment of a structure for transferring micro-nano samples provided by the present invention;

fig. 13 is a schematic view of an embodiment of a loading plate carrying a columnar compressed target sample in the structure for transferring micro-nano samples provided by the present invention;

fig. 14 is a schematic view of an embodiment of a carrying plate carrying a curved target sample in the structure for transferring micro-nano samples provided by the present invention;

fig. 15 is a schematic view of an embodiment of a loading plate in a structure for transferring micro-nano samples according to the present invention when carrying a tensile target sample;

fig. 16 is a schematic view of an embodiment of a loading plate in a structure for transferring micro-nano samples according to the present invention when carrying an non-mechanical experiment target sample;

in the figure, 1-objective plate; 2-a baffle plate; 3-a substrate; 4-an ion gun; 5-an electron gun; 6-target sample; 7-a first support zone; 8-a sample area; 9-a second support zone; 10-transition zone; 11-an adhesive area; 12-round crystal; 13-the area to be removed on the baffle; 14-a first Pt deposition zone; 15-a three-dimensional probe; 16-a second Pt deposition zone; 17-a first area to be cut; 18-a third Pt deposition zone; 19-a second area to be cut; 20-a target vector; 21-a ram base; 22-pressure head; 23-ion beam projection plane; 24-electron beam projection surface; 25-column compressing the target sample; 26-a flat head pressure head; 27-bending the target sample; 28-a wedge ram; 29-stretching the target sample; 30-hook sleeve structure; 31-non-mechanical experimental target samples.

Detailed Description

The following detailed description of the embodiments of the present invention is provided with reference to the accompanying drawings and examples. The following examples are intended to illustrate the invention, but are not intended to limit the scope of the invention.

In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood according to specific situations by those skilled in the art.

As shown in fig. 1, fig. 3, fig. 4 and fig. 5, an embodiment of the present invention provides a structure for transferring micro-nano samples, which includes a carrying plate 1, a baffle 2 and a base 3; the carrying plate 1 is connected with the baffle 2 in an L shape, one end of the carrying plate 1 is connected with the base body 3, and the base body 3 is vertical to the carrying plate 1 and the baffle 2; the loading plate 1 is sequentially provided with a sample area 8, a transition area 10 and an adhesion area 11 along the direction close to the base body 3; the sample area 8 is used for carrying the material block to be measured, the transition area 10 is used for separating the sample area 8 from the bonding area 11, and the bonding area 11 is used for connecting with the target carrier 20.

As shown in fig. 2, for example, the base 3 may be a block material, and the carrier plate 1 and the base 3 may be rectangular plates, which are formed by cutting the base 3; wherein, the horizontal arrangement is a loading plate 1, and the vertical arrangement is a baffle plate 2; for example, to facilitate separation of the carrier plate 1 from the base substrate 3, the length of the carrier plate 1 may be slightly greater than the length of the baffle 2, i.e., a gap is reserved between the baffle 2 and the base substrate 3 to provide a view of the ion beam to observe the bonding region 11, facilitating deposition operations when connecting the bonding region 11 to the target carrier 20; the part of the carrying plate 1, which is longer than the baffle plate 2, forms an adhesive area 11; for example, when the sample region 8 is arranged, a groove or a protrusion can be selectively formed according to the shape of the material block to be tested to be carried, so that the fixing of the material blocks to be tested in various shapes is facilitated; for example, in order to avoid sputtering damage and contamination to the sample caused by the cutting operation when the bonding region 11 is separated from the base body 3 and the deposition operation when the bonding region 11 is connected to the target carrier 20, a transition region, i.e., the transition region 10, is provided between the sample region 8 and the bonding region 11, and the length of the transition region 10 can be adjusted according to the size of the beam current used in cutting and bonding the tail end of the carrier plate 1. Wherein the length of the sample region is denoted as a and the length of the transition region is denoted as b.

When in use, a material block to be detected is fixed in the sample area 8, and then the shape and the thickness of the material block to be detected are processed according to the requirement to form a target sample 6; then, the adhesive region 11 is separated from the base body 3 and is adhered to the object carrier 20; wherein, the target carrier 20 can be comb teeth or MEMS device for TEM static representation sample; in the process of transferring the target sample 6, due to the shielding effect of the baffle 2, bombardment damage, injection pollution, sputtering damage and deposition ion attachment pollution generated by ion beam irradiation are avoided.

The embodiment of the utility model provides a structure of transferring micro-nano sample carries on the material piece to be measured through setting up the year thing board 1 to shield the irradiation of ion beam through the baffle 2 that links to each other with carrying thing board 1, avoid the sample to receive bombardment, injection and sputter damage in the transfer and the deposition process; the shape of the sample area 8 can be set according to the shape of the material block to be tested, so that the MEMS in-situ mechanical platform can realize more loading functions and can be applied to wider material fields; in addition, the existence of the base body 3 can facilitate the batch processing of the baffle 2 and the carrying plate 1, and brings convenience for subsequent use.

Furthermore, a preset gap is reserved between the baffle 2 and the base body 3, and a first support area 7 is also arranged on the carrying plate 1; the first support area 7 is positioned on one side of the sample area 8 close to the baffle 2; and/or the object carrying plate 1 is also provided with a second supporting area 9, and the second supporting area 9 is positioned on one side of the sample area 8 far away from the baffle plate 2. Specifically, for example, the joint between the baffle 2 and the base 3 may be cut at the time of processing to form a gap; for example, when the sample region 8 is a rectangular groove, if the rectangular groove is opened in the middle of the end of the object carrying plate 1 away from the base 3, the region between the rectangular groove on the object carrying plate 1 and the baffle 2 is the first support region 7, and the region on the other side of the rectangular groove on the object carrying plate 1 is the second support region 9; the required sample area 8 is also different according to different material blocks to be tested, and accordingly, the first support area 7 and/or the second support area 9 can be reserved or removed to better fix the material blocks to be tested in cooperation with the sample area 8.

Further, the width d of the first support area 7, the height Hs of the baffle 2 and the tilting angle α of the structure for transferring the micro-nano sample around the long axis direction of the object carrying plate 1 according to the experimental requirements of the transmission electron microscope satisfy the formula d > Hs tan α. Specifically, for example, the length of the sample region 8, the first support region 7 and the second support region 9 may be 3 to 8 μm, the length of the transition region 10 may be 6 to 12 μm, and the length of the bonding region 11 may be 1 to 2 μm; for example, the total length of the carrier plate 1 may be 10 to 22 μm; for example, the thickness of the carrier plate 1 is Tc, and the thickness may be 1 to 5 μm in order to provide sufficient strength to the carrier plate 1 and to stably support the target sample 6. In the TEM experiment, the target sample 6 needs to be tilted usually, and if the experiment needs to be tilted by α degrees around the long axis direction parallel to the object plate 1, the height of the baffle plate 2 needs to satisfy Hs < d/tan α in order that the baffle plate 2 does not obstruct the view of the TEM electron beam observing the target sample 6 after the tilt angle α. For example, the width of the second support region 9 is denoted as f, and f may be 1 to 2 μm.

Further, the width d of the first support region 7, the height Hs of the baffle 2, the width e of the sample region 8, and the included angle β between the electron beam and the ion beam satisfy the formula d + e < Hs tan β. Specifically, for example, if the angle between the ion beam and the electron beam in the SEM-FIB dual beam system for preparing the target sample 6 is β, then in order to effectively block the path of the sample region 8 irradiated by the ion beam emitted from the ion gun 4 during the transfer of the target sample 6, the height Hs > d + e)/tan β of the baffle 2 is required; for example, in order for the baffle 2 to effectively shield the sample region 8 when the target sample 6 is transferred, and not to shield the electron beam within the tilting angle required in the TEM experiment, the height of the baffle 2 should satisfy (d + e)/tan β < Hs < d/tan α.

Further, the length Ls of the baffle 2, the length Lc of the carrier plate 1 and the width c of the adhesive area 11 satisfy the formula Ls-Lc-c. Specifically, for example, in order to enable the target sample 6 to be transferred under the ion beam, the baffle 2 may directly shield the sample region 8 and also shield the transition region 10, so as to prevent the ion beam from directly irradiating the sample region 8 to generate bombardment, implantation and sputtering to damage the target sample 6, or irradiate the transition region 10 to generate sputtering to the periphery to indirectly damage the target sample 6. At the same time, the length of the baffle 2 needs to be such that the formula Ls-Lc-c is satisfied, leaving a field of view for the ion beam for cutting when the carrier plate 1 is detached from the base body 3 and for bonding when the carrier plate 1 is attached to the target carrier 20, without the baffle 2 blocking the bonding region 11. For example, the thickness of the baffle 2 is Ts, and since the baffle 2 continuously bears the irradiation of the ion beam in the process of transferring the target sample 6 under the ion beam, and needs to be connected with the three-dimensional probe 15 at the top end of the mechanical arm in the transferring process, the baffle has enough strength to ensure that no deformation occurs in the above process, and Ts may be 0.5 to 5 μm.

As shown in fig. 9, fig. 10 and fig. 11, wherein the left part is a schematic diagram in the electron beam field of view, and the right part is a schematic diagram in the ion beam field of view, the utility model also provides a method for transferring the micro-nano sample by using the structure of the micro-nano sample, which comprises the following steps: s10, extracting the material block to be detected smaller than the sample area 8, transferring and fixing the material block to be detected in the sample area 8; s20, processing the material block to be detected into a target sample 6, and keeping the center of the target sample 6 at the center of the top surface of the object carrying plate 1; s30, rotating the structure of the micro-nano sample to enable the baffle 2 to completely shield the path of the target sample 6 irradiated by the ion beam; s40, separating the carrier plate 1 from the substrate 3, transferring the target sample 6 to a position close to the target carrier 20, adjusting the position relationship between the indenter 22 or the hooking structure 30 and the target sample 6 as required, and connecting the adhesive region 11 with the target carrier 20.

Specifically, for example, after the structure for transferring the micro-nano sample is manufactured, a material block to be measured, the size of which is slightly smaller than that of the sample region 8, may be extracted by FIB, transferred to the sample region 8, and connected to the rear end surface of the sample region 8 and/or the first support region 7 and/or the second support region 9 as needed, where the connection between the material block to be measured and the first support region 7 and the second support region 9 is referred to as a first Pt deposition region 14. After bonding, the material block to be measured is cut and thinned to the required size and shape from the front end and/or the upper surface of the object carrying plate 1 downwards according to the requirement, and a target sample 6 is obtained and cleaned. Then, the target sample 6 is positioned in an ion beam shadow area by tilting and/or rotating the object carrying plate 1 and the baffle plate 2, namely, the baffle plate 2 shields the path of the target sample 6 irradiated by the ion beam, and a precise three-dimensional probe 15 matched with an FIB-SEM system is moved to a second Pt deposition area 16 at the top end of the baffle plate 2 under the three-dimensional view angle formed by the electron beam and the ion beam and is connected by Pt gas deposition; then, the first region to be cut 17 between the tail end of the carrier plate 1 and the base 3 is cut, so that the carrier plate 1 is completely separated from the base 3. Slowly withdrawing the three-dimensional probe 15 and the baffle 2 and the carrying plate 1 connected with the three-dimensional probe. The double-beam view is adjusted to the carrying area of the target carrier 20, and the baffle 2 and the carrying plate 1 are precisely moved to the target position by the three-dimensional probe 15 under the same double-beam view. Welding the bonding area 11 and the target carrier 20 firmly by Pt gas deposition, wherein the joint of the bonding area 11 and the target carrier 20 is called a third Pt deposition area 18; at this time, the joint of the three-dimensional probe 15 and the barrier 2 is referred to as a second region 19 to be cut, and then the joint of the three-dimensional probe 15 and the barrier 2 is cut, and the three-dimensional probe 15 is withdrawn.

Further, step S10 specifically includes: the block of material to be tested is attached to the first support region 7 and/or the second support region 9 such that the block of material to be tested is fixed to the sample region 8. Specifically, as shown in fig. 13, for example, in the case of a columnar compressed target sample 25, after the material block to be measured is transferred to the sample region 8, it is bonded between the first support region 7 and the second support region 9, and after it is formed into a columnar shape having a certain size and shape, it is safely transferred to the vicinity of the flat indenter 26 by the above-described transfer method. As shown in fig. 14, for example, for a curved target sample 27, when the object plate 1 and the baffle plate 2 are first processed by a focused ion beam, the sample region 8 and the second support region 9 can be removed simultaneously, the material block to be measured is bonded to the first support region 7, cut into a cantilever structure, and then transferred to the vicinity of the wedge indenter 28 under the protection of the baffle plate 2. As shown in fig. 15, the object carrying plate 1 and the baffle 2 can also be transferred to be used for stretching the target sample 29, and for the stretched target sample 29 with a hammerhead, the stretching beam is firstly cut, and then the stretched target sample 29 is transferred to the hooking structure 30 matched with the hammerhead structure of the stretching beam by utilizing the high-precision positioning capability under the double-beam view field, so as to form effective nesting. As shown in fig. 16, in addition, for the non-mechanical experiment target sample 31, such as the target sample 6 loaded in situ electrically and thermally or the target sample 6 in a general sheet shape, it is not necessary to maintain the target sample 6 in a specific spatial relationship with the mechanical loading part. Similarly, the processing and thinning can be completed firstly, and then the object carrying plate 1 and the baffle 2 are used for safe transfer.

Further, step S40 specifically includes: moving the target sample 6 to a horizontal position suitable for the distance from the indenter 22, obtaining the height of the center of the target sample 6, moving the target sample 6 so that the center of the target sample 6 and the center of the indenter 22 are at the same height, and then connecting the bonding region 11 with the target carrier 20. Further, the position of the target sample 6 in the X and Y directions is determined based on the electron beam image, and then the target sample 6 is moved to a horizontal position suitable for the distance from the indenter 22; the position of the target sample 6 in the Z direction is determined from the ion beam image, and then the target sample 6 is moved so that the center of the target sample 6 is at the same height as the center of the indenter 22.

As shown in fig. 12, particularly, for example, in the nanoindentation experiment, it is necessary to precisely control the spatial positional relationship of the indenter 22 mounted on the indenter base 21 with the target sample 6. The position of the target sample 6 in the direction X, Y is determined from the electron beam image, and the target sample 6 can be moved to a suitable horizontal position from the indenter 22. The height of the target sample 6 in the vertical Z direction needs to be obtained by analyzing the ion beam image. Knowing the angle between the electron beam and the ion beam is β, the precise height of the central position of the target sample 6 in the ion beam image, i.e. the position 1/2(Wc '+ Tc') at the lowest end of the objective plate 1 can be determined by using the geometric projection relation; wherein, during projection, the ion beam irradiation can form an ion beam projection surface 23, and the electron beam irradiation can form an electron beam projection surface 24; where Wc is the width of the object plate 1, Tc is the thickness of the object plate 1, and Wc 'and Tc' are the projection lengths of Wc and Tc in the ion beam field of view. After the height of the center of the target sample 6 is determined, the center of the target sample 6 is lowered to the height of the center of the indenter 22 using the three-dimensional probe 15. After confirming the X, Y, Z orientation position, Pt gas deposition was used to connect the bonding area 11 and the mounting position of the target carrier 20. And finally, cutting off the connection between the three-dimensional probe 15 and the baffle 2, and withdrawing the three-dimensional probe 15. The transfer process of the target sample 6 under the dual-beam field is completed, the target sample 6 is always protected by the baffle 2 during the whole operation, and the cutting and depositing operations of the bonding area 11 are completed at a position far away from the target sample 6 due to the transition area 10.

As shown in fig. 6, fig. 7 and fig. 8, further, the present invention further provides a method for preparing the structure for transferring micro-nano samples, comprising: s101, selecting a rectangular area with a proper size on a wafer 12, and preliminarily drawing a plurality of models for transferring the structure of the micro-nano sample in the rectangular area; s102, separating the rectangular area and the model from the wafer 12; and S103, fine trimming the model to obtain the final structure for transferring the micro-nano sample. Specifically, for example, first, a rectangular area (I area) of an appropriate size is selected on the wafer 12, and a plurality of patterns are drawn on the area immediately above the I area in accordance with the sizes of the carrier plate 1 and the baffle plate 2 to form a pattern group. Wherein the patterns are spaced apart sufficiently to avoid interference in subsequent applications. The shadow part of the I area is etched downwards from the front surface to a sufficient depth, and the length of the carrying plate 1 is generally increased by more than 2 micrometers, so that the carrying plate 1 and the baffle plate 2 protrude out of the surface of the I area. Then, the region II is etched through from the front side, so that the region I with the object carrying plate 1 and the baffle plate 2 is separated from the wafer 12. At this time, the upper edge of the baffle 2 and the upper wall of the region I are in the same plane, and the whole object carrying plate 1 and the baffle 2 protrude out of the surface of the base body 3. And finally, vertically placing the separated region I into an SEM-FIB system, tilting the upper edge of the baffle 2 to be vertical to the ion beam, cutting off a region 13 to be removed on the baffle and a sample region 8 on the carrying plate 1, and cutting off or reserving the first support region 7 and the second support region 9 according to requirements until a final micro-nano sample transferring structure is obtained.

As can be seen from the above embodiment, the utility model provides a structure of sample is received a little in transfer possesses following beneficial effect:

1. bombardment damage, injection pollution, sputtering damage and deposition adhesion pollution generated by ion beam irradiation can be effectively avoided;

2. the method realizes the pollution-free thinning and transferring of the TEM sample, is particularly suitable for preparing various target samples on a closed MEMS device used in a TEM in-situ experiment, and greatly widens the application field of MEMS in-situ loading chips;

3. the working characteristics of the focused ion beam and the TEM are considered, and the tilting requirement of a target sample in the TEM experiment can be ensured through the specific structural size relationship;

4. most preparation work is completed in batches by a semiconductor etching process, and the subsequent focused ion beam can be used after being simply trimmed, so that the preparation method is simple and effective;

5. the method can be operated in a three-dimensional visual field formed by two beams of electron beams and ion beams, and the accurate three-dimensional movement and bonding of a target sample are realized.

The above description is only a preferred embodiment of the present invention, and should not be taken as limiting the invention, and any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (5)

1. A structure for transferring a micro-nano sample is characterized by comprising a carrying plate, a baffle plate and a matrix;

the carrying plate is connected with the baffle in an L shape, one end of the carrying plate is connected with the base body, and the base body is perpendicular to the carrying plate and the baffle;

the loading plate is sequentially provided with a sample area, a transition area and an adhesion area along the direction close to the base body;

the sample area is used for carrying a material block to be tested, the transition area is used for separating the sample area from the bonding area, and the bonding area is used for being connected with a target carrier.

2. The structure for transferring micro-nano samples according to claim 1, wherein a preset gap is reserved between the baffle and the substrate;

the carrying plate is also provided with a first supporting area;

the first supporting area is positioned on one side of the sample area close to the baffle;

and/or a second support area is further arranged on the object carrying plate and is positioned on one side, far away from the baffle, of the sample area.

3. The structure for transferring micro-nano samples according to claim 2, wherein the width d of the first supporting region, the height Hs of the baffle, and the tilting angle α of the structure for transferring micro-nano samples around the long axis of the loading plate according to the experimental requirements of a transmission electron microscope satisfy the formula

d＞Hs*tanα。

4. A structure for transferring micro-nano samples according to claim 2, characterized in that the width d of the first supporting region, the height Hs of the baffle, the width e of the sample region and the included angle β between the electron beam and the ion beam in the focused ion beam dual-beam system satisfy the formula

d+e＜Hs*tanβ。

5. The structure for transferring micro-nano samples according to claim 2, wherein the length Ls of the baffle, the length Lc of the loading plate and the width c of the bonding area satisfy the formula

Ls＝Lc-c。

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