CN209957892U

CN209957892U - CVD deposition furnace device

Info

Publication number: CN209957892U
Application number: CN201920237964.6U
Authority: CN
Inventors: 汪洋; 万强; 柴攀
Original assignee: Hunan Dezhi New Material Co Ltd
Current assignee: Hunan Dezhi New Material Co Ltd
Priority date: 2019-02-25
Filing date: 2019-02-25
Publication date: 2020-01-17
Anticipated expiration: 2029-02-25

Abstract

The utility model provides a CVD deposition furnace device, including deposit room, base and the subassembly that admits air, the subassembly that admits air is connected with the deposit room, and the subassembly that admits air includes: the air inlet pipe, the shunt ball, 3 to 11 shunt tubes, the shunt tubes are connected with the nozzle. The utility model provides a CVD deposition furnace device's beneficial effect lies in: the source gas input into the CVD deposition furnace flows through the shunt pipes in different directions after reaching the shunt ball from the gas inlet pipe and is uniformly diffused in the deposition chamber under the action of the nozzle.

Description

CVD deposition furnace device

Technical Field

The utility model relates to a semiconductor industry field, in particular to CVD deposition furnace device.

Background

As one of the widely used techniques in the semiconductor industry, Chemical Vapor Deposition (CVD) is a process in which a source gas containing raw material components is fed into a CVD deposition furnace, and a solid film is deposited on a preform by diffusion, convection, and the like, to form a finished product. In the CVD process, the structure of the CVD deposition furnace has a great influence on the deposition efficiency and the deposition quality.

The conventional CVD deposition furnace is usually divided into a gas mixing chamber and a deposition chamber by a planar splitter plate, and the source gas firstly enters the gas mixing chamber through a gas inlet pipe and then enters the deposition chamber through gas holes on the splitter plate. Because the temperature of the diverter tray is very high in the deposition process, most of the source gas is directly deposited on the diverter tray before entering the deposition chamber, so that the source gas is excessively consumed, and is unevenly distributed in the deposition chamber, and the deposition efficiency and the deposition quality are influenced.

SUMMERY OF THE UTILITY MODEL

An object of the utility model is to provide a CVD deposition furnace device aims at solving among the prior art source gas loss too big, the uneven technical problem of distribution in the deposit room, and the technical scheme of adoption is as follows:

a CVD deposition furnace device comprises a deposition chamber, a base and a gas inlet assembly, wherein the gas inlet assembly is connected with the deposition chamber and comprises:

the air inlet pipe is of a hollow structure and is communicated with the space outside the deposition chamber;

the flow dividing ball is of a hollow structure, is arranged at one end of the air inlet pipe, which is far away from the space outside the deposition chamber, and is communicated with the air inlet pipe;

at least 3 shunt tubes are respectively arranged on the spherical surface of the shunt ball, the shunt tubes are of hollow structures, and one ends of the shunt tubes are communicated with the inner cavity of the shunt ball;

and the at least 3 nozzles are arranged at one end of the flow dividing pipe, which is far away from the flow dividing ball, the nozzles are of a hollow structure, one end of each nozzle is communicated with the flow dividing pipe, and the other end of each nozzle is communicated with the deposition chamber.

Furthermore, the inner diameter of the deposition chamber is 400-1000 mm, the height is 500-2000 mm, the inner diameter of the air inlet pipe is 50-100 mm, the wall thickness is 5-10 mm, the inner diameter of the shunt ball is 100-300 mm, the wall thickness is 5-10 mm, the inner diameter of the shunt pipe is 20-50 mm, the length is 20-50 mm, the wall thickness is 3-10 mm, the shape of the nozzle is in a circular table shape, the bottom surface is oval or circular, the inner diameter is 20-50 mm, the horn mouth faces to one end far away from the shunt pipe, the included angle between a generatrix of the circular table and a central axis is 20-40 degrees, the height of the circular table is 20-50 mm, and the wall thickness is 3-10 mm.

Further, the number of shunt tubes is within 11.

Furthermore, the air inlet pipe is in threaded connection or buckled connection with the shunt ball, the shunt ball is in threaded connection or buckled connection with the shunt pipe, and the shunt pipe is in threaded connection or buckled connection with the nozzle.

Furthermore, the distance between the central axis of the shunt pipe and the spherical center of the shunt ball is less than 10mm, and the distance between the central axis of the nozzle and the spherical center of the shunt ball is less than 10 mm. .

Further, the base is positioned at the bottom of the deposition chamber and has a height less than 20 mm.

Further, the deposition chamber is made of graphite or carbon-carbon composite materials.

Further, the air inlet pipe is connected with a mass flow measurement and control system and used for controlling the air inlet flow.

The utility model provides a CVD deposition furnace device's beneficial effect lies in:

the source gas input into the CVD deposition furnace flows through the shunt pipes in different directions after reaching the shunt ball from the gas inlet pipe, and is uniformly diffused in the deposition chamber under the action of the nozzle.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments described in the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.

FIG. 1 is a structural view of a CVD deposition furnace apparatus according to an embodiment of the present invention.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the invention.

It is to be understood that the terms "upper", "lower", "left", "right", and the like, as used herein, refer to an orientation or positional relationship based on that shown in the drawings, which is for convenience of description only, and do not indicate or imply that the referenced device or element must have a particular orientation, be constructed and operated in a particular orientation, and therefore should not be considered limiting of this patent. The terms "first", "second" and "first" are used merely for descriptive purposes and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features. The meaning of "plurality" is two or more unless specifically limited otherwise.

It should also be noted that, unless expressly stated or limited otherwise, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly and may for example be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.

In order to explain the technical solution of the present invention, the following detailed description is made with reference to the specific drawings and examples.

As shown in fig. 1, the embodiment of the utility model provides a CVD deposition furnace device, including deposition chamber 1 and air intake assembly 3, air intake assembly 3 is connected with deposition chamber 1, and air intake assembly 3 includes:

the air inlet pipe 32 is of a hollow structure, and is communicated with the space outside the deposition chamber 1;

the flow dividing ball 33 is of a hollow structure, is arranged at one end of the air inlet pipe 32 far away from the outer space of the deposition chamber 1 and is communicated with the air inlet pipe 32;

at least 3 shunt tubes 34 which are respectively arranged on the spherical surface of the shunt ball 33, wherein the shunt tubes 34 are of hollow structures, and one ends of the shunt tubes are communicated with the inner cavity of the shunt ball 33;

and at least 3 nozzles 35 arranged at one end of the shunt tube 34 far away from the shunt ball 33, wherein the nozzles 35 are of a hollow structure, one end of each nozzle is communicated with the shunt tube 34, and the other end of each nozzle is communicated with the deposition chamber 1.

More preferably, the deposition chamber 1 has an inner diameter of 400mm to 1000mm, a height of 500mm to 2000mm, an inner diameter of 50mm to 100mm of the inlet pipe 32, a wall thickness of 5mm to 10mm, an inner diameter of 100mm to 300mm of the flow dividing ball 33, a wall thickness of 5mm to 10mm, an inner diameter of 20mm to 50mm of the flow dividing pipe 34, a length of 20mm to 50mm, a wall thickness of 3mm to 10mm, a circular truncated cone-shaped nozzle 35, an elliptical or circular bottom surface, an inner diameter of 20mm to 50mm, a horn mouth facing away from one end of the flow dividing pipe 34, an included angle between a generatrix of the circular truncated cone and a central axis of 20 degrees to 40 degrees, a height of 20mm to 50mm of the circular truncated cone, and a wall thickness of 3mm to.

In a further preferred embodiment, the number of shunts 34 is less than 11.

In a further preferred embodiment, the air inlet pipe 32 is screwed or snap-fitted to the shunt ball 33, the shunt ball 33 is screwed or snap-fitted to the shunt pipe 34, and the shunt pipe 34 is screwed or snap-fitted to the nozzle 35.

In a further preferred embodiment, the distance between the central axis of the shunt tube 34 and the center of the shunt ball 33 is less than 10mm, and the distance between the central axis of the nozzle 35 and the center of the shunt ball 33 is less than 10 mm.

As a further preference of this embodiment, the susceptor 2 is located at the bottom of the deposition chamber 1 and has a height of less than 20 mm.

As a further preferable mode of the present embodiment, the deposition chamber 1 is made of graphite or carbon composite.

In a further preferred embodiment of the present invention, the intake pipe 32 is connected to a mass flow measurement and control system for controlling the intake air flow rate.

The working principle of the embodiment is as follows:

under the control of a mass flow measurement and control system, source gas is input through an air inlet pipe 32, enters a shunt ball 33, then flows through shunt pipes 34 in all directions, is uniformly diffused to the deposition chamber 1 under the action of a nozzle 35, and when the deposition chamber 1 and the base 2 are respectively communicated with an anode and a cathode, raw gas containing source materials is deposited on a prefabricated member on the base 2 in the deposition chamber 1 to generate a finished product.

It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.

The principles and embodiments of the present invention have been explained herein using specific examples, which are presented only to assist in understanding the methods and their core concepts. It should be noted that there are infinite specific structures due to the limited character expressions, and it will be apparent to those skilled in the art that various improvements, decorations or changes can be made without departing from the principles of the present invention, and the technical features can be combined in a suitable manner; the application of these modifications, variations or combinations, or the application of the concepts and solutions of the present invention in other contexts without modification, is not intended to be considered as a limitation of the present invention.

Claims

1. A CVD deposition furnace arrangement, comprising a deposition chamber (1), a susceptor (2) and a gas inlet assembly (3), the gas inlet assembly (3) being connected to the deposition chamber (1), the gas inlet assembly (3) comprising:

the gas inlet pipe (32), the gas inlet pipe (32) is of a hollow structure and is communicated with the space outside the deposition chamber (1);

the flow dividing ball (33) is of a hollow structure, is arranged at one end of the air inlet pipe (32) far away from the outer space of the deposition chamber (1), and is communicated with the air inlet pipe (32);

the at least 3 shunt tubes (34) are respectively arranged on the spherical surface of the shunt ball (33), the shunt tubes (34) are of hollow structures, and one ends of the shunt tubes are communicated with the inner cavity of the shunt ball (33);

at least 3 nozzles (35) are arranged at one end, far away from the shunt ball (33), of the shunt pipe (34), each nozzle (35) is of a hollow structure, one end of each nozzle is communicated with the shunt pipe (34), and the other end of each nozzle is communicated with the deposition chamber (1).

2. The CVD deposition furnace apparatus according to claim 1, wherein the deposition chamber (1) has an inner diameter of 400mm to 1000mm, a height of 500mm to 2000mm, the inlet pipe (32) has an inner diameter of 50mm to 100mm, a wall thickness of 5mm to 10mm, the flow dividing ball (33) has an inner diameter of 100mm to 300mm, a wall thickness of 5mm to 10mm, the flow dividing pipe (34) has an inner diameter of 20mm to 50mm, a length of 20mm to 50mm, and a wall thickness of 3mm to 10mm, the nozzle (35) has a circular truncated cone shape, an elliptical or circular bottom surface, an inner diameter of 20mm to 50mm, a bell mouth facing away from one end of the flow dividing pipe (34), an included angle between a generatrix of the circular cone and a central axis of 20 degrees to 40 degrees, a height of 20mm to 50mm, and a wall thickness of 3mm to 10 mm.

3. The CVD deposition furnace apparatus of claim 1, wherein the number of shunt tubes (34) is up to 11.

4. The CVD deposition furnace apparatus according to claim 1, wherein the gas feed pipe (32) is screw-connected or snap-connected to the flow dividing ball (33), the flow dividing ball (33) is screw-connected or snap-connected to the flow dividing pipe (34), and the flow dividing pipe (34) is screw-connected or snap-connected to the nozzle (35).

5. The CVD deposition furnace apparatus according to claim 1, wherein a distance between a central axis of the shunt tube (34) and a spherical center of the shunt ball (33) is less than 10mm, and a distance between a central axis of the nozzle (35) and a spherical center of the shunt ball (33) is less than 10 mm.

6. The CVD deposition furnace apparatus according to claim 1, wherein the susceptor (2) is located at the bottom of the deposition chamber (1) and has a height of less than 20 mm.

7. The CVD deposition furnace arrangement according to claim 1, characterized in that the deposition chamber (1) is made of graphite or carbon-carbon composite material.

8. The CVD deposition furnace apparatus according to any of claims 1 to 7, wherein the gas inlet pipe (32) is connected to a mass flow measurement and control system for controlling a flow rate of the gas inlet.