CN209949061U - 500MHZ ~ 6000MHZ ultra-wideband power amplifier - Google Patents
500MHZ ~ 6000MHZ ultra-wideband power amplifier Download PDFInfo
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- CN209949061U CN209949061U CN201920938129.5U CN201920938129U CN209949061U CN 209949061 U CN209949061 U CN 209949061U CN 201920938129 U CN201920938129 U CN 201920938129U CN 209949061 U CN209949061 U CN 209949061U
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- 500mhz
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Abstract
The utility model discloses a 500MHZ ~ 6000MHZ ultra wide band power amplifier, this circuit structure set up on integrated circuit, contain on-chip transformer coupling input network, transistor amplifier circuit, output network, control and bias production circuit and envelope detection circuit, on-chip transformer coupling input network is equipped with electric capacity inductance parallel resonance return circuit, the input and the output of transistor amplifier circuit respectively with on-chip transformer coupling input network and output network connects, output network's output and antenna and impedance transformation network are connected, output network is equipped with electric capacity inductance parallel resonance return circuit, through the utility model discloses, can realize a 500MHZ ~ 6000MHZ ultra wide band power amplifier.
Description
Technical Field
The utility model belongs to the technical field of communication and specifically relates to a 500MHZ ~ 6000MHZ ultra wide band power amplifier.
Background
A power amplifier is a decisive component for determining the level and power consumption of signals transmitted by a wireless communication transmitter. In order to effectively utilize frequency spectrum resources, a large number of non-constant envelope modulation modes are adopted in modern wireless digital communication, which puts high requirements on the linearity of a power amplifier.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to overcome prior art not enough, provide a 500MHZ ~ 6000MHZ ultra wide band power amplifier, take place the module including amplifier module, wave detector module, LD0 power module, the module of stepping up, logic gate module, power management module, singlechip, negative pressure module and amplifier module, LDO power module, the module of stepping up, logic gate module be connected respectively, LD0 power module be connected with the amplifier module, power management module be connected respectively with LD0 power module, singlechip, logic gate module, the detection module be connected with the singlechip, logic gate module still be connected with the singlechip.
Preferably, the amplifier module includes a power amplifier tube, an amplifier, an N-type connector 1, an N-type connector 2, a radio frequency switch N4, an LTCC filter 1, an LTCC filter 2, a small signal amplifier, a radio frequency switch N15, and a crystal oscillator, wherein an input end of the crystal oscillator is connected to a power supply, and an output end of the crystal oscillator is connected to an RF end of the radio frequency switch; the RF2 end of the radio frequency switch is connected with the input end of a small signal amplifier through an LTCC filter 2, the output end of the small signal amplifier is connected with the RFC end of a radio frequency switch N4 through an LTCC filter 1, the RF1 end of a radio frequency switch N4 is connected with the RFIN end of the amplifier, the RFOUT end of the amplifier is connected with the RFIN end of a power amplification tube, the RFOUT end of the power amplification tube is connected with one end of an N-type connector 2, and the other end of the N-type connector 2 is grounded; the input end of the small signal amplifier is also connected with one end of an N-type connector 2, and the other end of the N-type connector 2 is grounded; the CTRL end negative pressure generating module of the radio frequency switch N4 is connected; and the VDD2 end and the VDD1 end of the power amplifier tube are respectively connected with the boosting module, and the VGG1 end is connected with the negative pressure generation module.
Preferably, the intelligent power supply further comprises a temperature sensor module, and the temperature sensor module is respectively connected with the power supply management module and the single chip microcomputer module.
Preferably, the type of the power amplifier tube is HMC8205BF 10.
Preferably, the amplifier is model HMC637BPM 5E.
Preferably, the type of the radio frequency switch N4 is PE42423 MLBA-Z.
Preferably, the small signal amplifier is GVA-82 +.
Preferably, the radio frequency switch N15 is of the type HMC194MS 8.
Preferably, the LTCC filter 1 is BPF-C4R5+ and the LTCC filter 2 is LFCN-6000 +.
The beneficial effects of the utility model are that, through the utility model discloses a 500MHZ ~ 6000MHZ ultra wide band power amplifier who realizes have to channel decline insensitive, transmission signal power spectral density low, low interception ability, system complexity low, can provide advantages such as several centimetres positioning accuracy.
Drawings
FIG. 1 is a schematic diagram of a 500MHZ ~ 6000MHZ ultra-wideband power amplifier;
FIG. 2-1 is a schematic diagram of an amplifier module of a 500MHZ ~ 6000MHZ ultra-wideband power amplifier;
FIG. 2-2 is a schematic diagram of an amplifier module of a 500MHZ ~ 6000MHZ ultra-wideband power amplifier;
FIG. 3 is a schematic diagram of an LD0 power module;
FIG. 4 is a schematic diagram of a power management module;
FIG. 5 is a schematic diagram of a single-chip microcomputer module;
FIG. 6 is a schematic diagram of a logic gate module.
Detailed Description
The technical solution of the present invention is described in further detail below with reference to the accompanying drawings, but the scope of the present invention is not limited to the following description.
As shown in fig. 1, the utility model discloses a 500MHZ ~ 6000MHZ ultra wide band power amplifier, take place the module including amplifier module, wave detector module, LD0 power module, the module of stepping up, logic gate module, power management module, singlechip, negative pressure module and amplifier module, LDO power module, the module of stepping up, logic gate module be connected respectively, LD0 power module be connected with the amplifier module, power management module be connected respectively with LD0 power module, singlechip, logic gate module, the detection module be connected with the singlechip, logic gate module still be connected with the singlechip.
Specifically, as shown in fig. 2, the amplifier module includes a power amplifier tube, an amplifier, an N-type connector 1, an N-type connector 2, a radio frequency switch N4, an LTCC filter 1, an LTCC filter 2, a small signal amplifier, a radio frequency switch N15, and a crystal oscillator, where an input end of the crystal oscillator is connected to a power supply, and an output end of the crystal oscillator is connected to an RF end of the radio frequency switch; the RF2 end of the radio frequency switch is connected with the input end of a small signal amplifier through an LTCC filter 2, the output end of the small signal amplifier is connected with the RFC end of a radio frequency switch N4 through an LTCC filter 1, the RF1 end of a radio frequency switch N4 is connected with the RFIN end of the amplifier, the RFOUT end of the amplifier is connected with the RFIN end of a power amplification tube, the RFOUT end of the power amplification tube is connected with one end of an N-type connector 2, and the other end of the N-type connector 2 is grounded; the input end of the small signal amplifier is also connected with one end of an N-type connector 2, and the other end of the N-type connector 2 is grounded; the CTRL end negative pressure generating module of the radio frequency switch N4 is connected; and the VDD2 end and the VDD1 end of the power amplifier tube are respectively connected with the boosting module, and the VGG1 end is connected with the negative pressure generation module.
The utility model discloses in still including the temperature sensor module, the temperature sensor module be connected respectively with power management module, single chip module. The power amplifier tube is HMC8205BF 10. The amplifier was model HMC637BPM 5E. The radio frequency switch N4 is of a type PE42423 MLBA-Z. The small signal amplifier adopts the model GVA-82 +. The radio frequency switch N15 is of the type HMC194MS 8. The LTCC filter 1 is BPF-C4R5+, and the LTCC filter 2 is LFCN-6000 +.
To sum up, the utility model discloses an utilize adjustable inductance and improve the circuit structure of power amplifier linearity can conveniently design the realization on integrated circuit, is particularly suitable for realizing in CMOS integrated circuit, can realize the linearization of radio frequency power amplifier self-adaptation, easily adopts the even number order harmonic component among the differential circuit structure elimination radio frequency power amplifier, has realized radio frequency signal's band-pass filtering simultaneously.
The foregoing is illustrative of the preferred embodiments of the present invention, and it is to be understood that the invention is not limited to the precise forms disclosed herein, and that various other combinations, modifications, and environments may be resorted to, falling within the scope of the invention as defined by the appended claims. But that modifications and variations may be effected by those skilled in the art without departing from the spirit and scope of the invention, which is to be limited only by the claims appended hereto.
Claims (9)
1. The utility model provides a 500MHZ ~ 6000MHZ ultra wide band power amplifier, its characterized in that, includes amplifier module, wave detector module, LD0 power module, steps up module, logic gate module, power management module, singlechip, negative pressure and takes place the module, negative pressure take place the module and amplifier module, LDO power module, step up module, logic gate module and be connected respectively, LD0 power module be connected with the amplifier module, power management module be connected respectively with LD0 power module, singlechip, logic gate module, the wave detector module be connected with the singlechip, logic gate module still be connected with the singlechip.
2. The 500MHZ ~ 6000MHZ ultra-wideband power amplifier as claimed in claim 1, wherein said amplifier module comprises a power amplifier tube, an amplifier, an N-type connector 1, an N-type connector 2, a radio frequency switch N4, an LTCC filter 1, an LTCC filter 2, a small signal amplifier, a radio frequency switch N15, a crystal oscillator, wherein the input end of said crystal oscillator is connected with a power supply, and the output end is connected with the RF end of the radio frequency switch, the RF2 end of the radio frequency switch is connected with the input end of the small signal amplifier through the LTCC filter 2, the output end of the small signal amplifier is connected with the RFC end of the radio frequency switch N4 through the LTCC filter 1, the RF1 end of the radio frequency switch N4 is connected with the RFIN end of the amplifier, the RFOUT end of the amplifier is connected with the RFIN end of the power amplifier tube, the RFOUT end of the power amplifier tube is connected with one end of the N-type connector 2, the other end of the power amplifier tube is connected with the VGG 7328, and the negative voltage generation module is connected with the VDD generator.
3. The 500MHZ ~ 6000MHZ ultra-wideband power amplifier of claim 1, characterized in that, further comprises a temperature sensor module, and the temperature sensor module is respectively connected with the power management module and the single chip microcomputer module.
4. The 500MHZ ~ 6000MHZ ultra-wideband power amplifier of claim 2, wherein the power amplifier tube is of the type HMC8205BF 10.
5. The 500MHZ ~ 6000MHZ ultra-wideband power amplifier of claim 2, wherein the amplifier is of the type HMC637BPM 5E.
6. The 500MHZ ~ 6000MHZ ultra-wideband power amplifier of claim 2, wherein the radio frequency switch N4 is of the type PE42423 MLBA-Z.
7. The 500MHZ ~ 6000MHZ ultra-wideband power amplifier of claim 2, wherein the small signal amplifier is of the type GVA-82 +.
8. The 500MHZ ~ 6000MHZ ultra-wideband power amplifier of claim 2, wherein the radio frequency switch N15 is of the type HMC194MS 8.
9. The 500MHZ ~ 6000MHZ ultra wideband power amplifier of claim 2, wherein the LTCC filter 1 is BPF-C4R5+, and the LTCC filter 2 is LFCN-6000 +.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201920938129.5U CN209949061U (en) | 2019-06-20 | 2019-06-20 | 500MHZ ~ 6000MHZ ultra-wideband power amplifier |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN201920938129.5U CN209949061U (en) | 2019-06-20 | 2019-06-20 | 500MHZ ~ 6000MHZ ultra-wideband power amplifier |
Publications (1)
Publication Number | Publication Date |
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CN209949061U true CN209949061U (en) | 2020-01-14 |
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CN201920938129.5U Active CN209949061U (en) | 2019-06-20 | 2019-06-20 | 500MHZ ~ 6000MHZ ultra-wideband power amplifier |
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CN (1) | CN209949061U (en) |
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2019
- 2019-06-20 CN CN201920938129.5U patent/CN209949061U/en active Active
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Denomination of utility model: A 500MHZ~6000MHZ Ultra-Broadband Power Amplifier Effective date of registration: 20220816 Granted publication date: 20200114 Pledgee: Chengdu SME financing Company Limited by Guarantee Pledgor: Chengdu Guosheng juntong Technology Co.,Ltd. Registration number: Y2022980012733 |