CN209947809U - Semiconductor substrate processing apparatus - Google Patents
Semiconductor substrate processing apparatus Download PDFInfo
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- CN209947809U CN209947809U CN201921118001.0U CN201921118001U CN209947809U CN 209947809 U CN209947809 U CN 209947809U CN 201921118001 U CN201921118001 U CN 201921118001U CN 209947809 U CN209947809 U CN 209947809U
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Abstract
The application discloses processing apparatus of semiconductor substrate, this processing apparatus includes: the upper surface of the shell is provided with an opening; an adsorption member positioned in the housing for adsorbing a semiconductor substrate to be processed; the first support frame is positioned in the shell and provided with an accommodating space, and the adsorption piece is positioned in the accommodating space; the cleaning piece is provided with a first cleaning liquid, and the first cleaning liquid cleans a preset area on the back surface of the semiconductor substrate through the opening of the shell; the preset area on the back surface of the semiconductor substrate is different from other areas in color, and the first cleaning liquid is corrosive liquid medicine. The processing device can be used for locally cleaning the corrosion area on the back surface of the semiconductor substrate, effectively removing the corroded part on the back surface of the semiconductor substrate, not influencing the non-corroded part of the semiconductor substrate, and relieving the phenomenon of inconsistent color on the back surface of the semiconductor substrate.
Description
Technical Field
The present application relates to the field of semiconductor technology, and more particularly, to a semiconductor substrate processing apparatus.
Background
The III-V group compound semiconductor material represented by gallium arsenide has very wide application in the fields of satellite communication, microwave devices, lasers, light emitting diodes and the like due to the unique electrical properties of the material, such as semiconductor devices of heterojunction bipolar transistors, high electron mobility transistors, LEDs and the like. Specifically, in the fabrication of a semiconductor device, an epitaxial structure needs to be grown on a main surface of a high-quality substrate by using a molecular beam epitaxy technique or an organometallic compound vapor phase epitaxy technique, and therefore, before the epitaxial structure is grown on the surface of the semiconductor substrate, the main surface of the semiconductor substrate needs to be subjected to processes such as polishing and cleaning to obtain a high-quality substrate.
However, the back surface of the semiconductor substrate formed by the conventional semiconductor substrate manufacturing process often has a phenomenon of color inconsistency.
SUMMERY OF THE UTILITY MODEL
In order to solve the above technical problem, embodiments of the present application provide an apparatus for processing a semiconductor substrate to alleviate a color inconsistency phenomenon existing on a back surface of the semiconductor substrate.
In order to solve the above problem, the embodiment of the present application provides the following technical solutions:
an apparatus for processing a semiconductor substrate, comprising:
a housing having an opening on an upper surface thereof;
the adsorption piece is positioned in the shell and used for adsorbing a semiconductor substrate to be processed, and when the semiconductor substrate is positioned on the surface of the adsorption piece, the back surface of the semiconductor substrate faces the opening of the shell;
the first support frame is positioned in the shell and provided with an accommodating space, and the adsorption piece is positioned in the accommodating space;
the cleaning piece is provided with a first cleaning liquid, and the first cleaning liquid cleans a preset area on the back surface of the semiconductor substrate through the opening of the shell;
the preset area on the back surface of the semiconductor substrate is different from other areas in color, and the first cleaning liquid is corrosive liquid medicine.
Optionally, a second cleaning liquid is provided in the casing, a surface of the second cleaning liquid is lower than a surface of the semiconductor substrate on a side facing the adsorbing member, and the second cleaning liquid is a non-corrosive liquid.
Optionally, the shell is provided with a liquid inlet.
Optionally, the height of the liquid inlet on the housing is lower than the surface of the side, facing the adsorption part, of the semiconductor substrate after the semiconductor substrate is placed on the surface of the adsorption part.
Optionally, the adsorption member is an adsorption body adsorbing non-corrosive liquid.
Optionally, the adsorption body is a sponge.
Optionally, the cleaning member includes: a burette and a liquid storage tank fixedly connected with the burette.
Optionally, the method further includes: and the second support frame is used for fixing the cleaning piece.
A method for processing a semiconductor substrate, which is applied to any one of the above-described semiconductor substrate processing apparatuses, characterized by comprising:
placing a semiconductor substrate to be processed on the surface of a suction piece in a semiconductor substrate processing device, wherein the main surface of the semiconductor substrate faces the suction piece, and the back surface of the semiconductor substrate faces away from the suction piece;
cleaning a preset area on the back surface of the semiconductor substrate for the first time by using a first cleaning liquid in the cleaning piece;
the preset area on the back surface of the semiconductor substrate is different from other areas in color, and the first cleaning liquid is corrosive liquid medicine.
Optionally, the method further includes:
and carrying out secondary cleaning on the back surface of the semiconductor substrate by using a second cleaning solution, wherein the second cleaning solution is a non-corrosive liquid.
Compared with the prior art, the technical scheme has the following advantages:
according to the technical scheme provided by the embodiment of the application, when the inconsistent phenomenon of colour appears in the back of semiconductor substrate, can directly be with semiconductor substrate places on the absorption piece, utilize absorption piece with semiconductor substrate between the adsorption force right semiconductor substrate fixes, then, utilize first washing liquid in the washing piece is right the corruption region at the back of semiconductor substrate washs to alleviate the inconsistent phenomenon of colour in semiconductor substrate back corruption region and the region that is not corroded, make the colour in semiconductor substrate back corruption region and the region that is not corroded tends to unanimity.
Therefore, the processing device of the semiconductor substrate provided by the embodiment of the application can perform local cleaning on the corroded area of the back surface of the semiconductor substrate, so that the corroded part of the back surface of the semiconductor substrate is effectively removed, the part, which is not corroded, of the semiconductor substrate is not influenced, the normal processing of the semiconductor substrate is not influenced, re-polishing or even scrapping is not needed, the yield of the semiconductor substrate is improved, and the cost of the semiconductor substrate is reduced.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic diagram of an apparatus for processing a semiconductor substrate according to one embodiment of the present application;
FIG. 2 is a schematic structural diagram of an apparatus for processing a semiconductor substrate according to another embodiment of the present application;
fig. 3 is a schematic structural diagram of a first support frame in a semiconductor substrate processing apparatus according to an embodiment of the present application;
FIG. 4 is a flow chart of a method of processing a semiconductor substrate according to one embodiment of the present application;
fig. 5 is a flow chart of a method of processing a semiconductor substrate according to another embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application, but the present application may be practiced in other ways than those described herein, and it will be apparent to those of ordinary skill in the art that the present application is not limited to the specific embodiments disclosed below.
As described in the background section, the back surface of a semiconductor substrate formed by the conventional semiconductor substrate manufacturing process often has a phenomenon of color inconsistency.
The inventors have studied and found that this is because, when polishing the main surface of the semiconductor substrate, mainly by fixing the back surface of the semiconductor substrate on a fixed tray (TP tray) so that the main surface of the semiconductor substrate faces downward, the main surface of the semiconductor substrate is then mirror-polished with a chlorine polisher. In the specific polishing process, because the area of the fixed disk is slightly larger than that of the semiconductor substrate and/or the service life of the fixed disk is long, in the process of polishing the main surface of the semiconductor substrate, more polishing liquid can be accumulated on the edge part of the contact area of the fixed disk and the semiconductor substrate, the polishing liquid solution can permeate into the back surface of the semiconductor substrate to corrode the back surface of the semiconductor substrate, so that the colors of the corroded area and the non-corroded area on the back surface of the semiconductor substrate are not consistent, the quality of the semiconductor substrate is influenced, the semiconductor substrate is polished or scrapped again, the yield of the semiconductor substrate is reduced, and the production cost is increased.
Moreover, if the semiconductor substrate is polished again for a large number of times, the thickness of the semiconductor substrate is seriously affected, so that the semiconductor substrate is too thin to be used any more and can only be discarded.
In addition, after the main surface of the semiconductor substrate is polished, the entire semiconductor substrate needs to be washed with acid or alkali and then dried, wherein in the process of washing with acid or alkali, the color of the back surface of the semiconductor substrate may be inconsistent.
In view of the above, the present application provides a processing apparatus for a semiconductor substrate, as shown in fig. 1, the processing apparatus comprising:
the device comprises a shell 1, wherein the upper surface of the shell 1 is provided with an opening 11;
a suction member 2 located in the housing 1, the suction member 2 being used for sucking a semiconductor substrate 3 to be processed, when the semiconductor substrate 3 is located on the surface of the suction member 2, the back surface of the semiconductor substrate 3 faces the opening of the housing 1, and the main surface of the semiconductor substrate 3 faces the suction member 2 and is in contact with the suction member 2;
the first support frame 4 is positioned in the shell 1, the first support frame 4 is provided with an accommodating space, and the adsorption part 2 is positioned in the accommodating space;
a cleaning member 5, wherein the cleaning member 5 is provided with a first cleaning liquid, and the first cleaning liquid cleans a preset area on the back surface of the semiconductor substrate 3 through an opening 11 of the shell 1;
wherein, the preset area on the back surface of the semiconductor substrate 3 has a different color from other areas, and the first cleaning solution is a corrosive liquid medicine.
In the embodiment of the present application, the predetermined region of the back surface of the semiconductor substrate is a region where the back surface of the semiconductor substrate is etched, and the other region of the back surface of the semiconductor substrate is a region where the back surface of the semiconductor substrate is not etched. The main surface of the semiconductor substrate is a polished surface of the semiconductor substrate, that is, a surface for forming an epitaxial structure subsequently, and the back surface of the semiconductor substrate is a surface opposite to the main surface of the semiconductor substrate.
On the basis of the above embodiments, in an embodiment of the present application, after the front projection of the opening on the bottom surface of the housing is completely covered on the front projection of the semiconductor substrate to be processed on the suction member, the front projection of the semiconductor substrate on the bottom surface of the housing is ensured to be corroded, and the cleaning member can clean the corroded area on the back surface of the semiconductor substrate through the opening of the housing to reduce the color difference between the corroded area and the non-corroded area on the back surface of the semiconductor substrate, so that the color between the corroded area and the non-corroded area on the back surface of the semiconductor substrate is consistent.
It should be noted that, on the basis of the above embodiments, in an embodiment of the present application, the color of the predetermined region of the back surface of the semiconductor substrate is different from the color of other regions and is a color difference recognizable by human eyes, and the color consistency between the corroded region and the non-corroded region of the back surface of the semiconductor substrate is consistent within a range of human eye identification, but the present application does not limit this, and is determined according to the quality requirement of the semiconductor substrate.
In addition to the above embodiments, in one embodiment of the present application, an orthographic projection of the opening of the housing on the bottom surface of the housing completely covers the bottom surface of the housing, but the present application does not limit this, and in other embodiments of the present application, an orthographic projection of the opening on the bottom surface of the housing may not completely cover the bottom surface of the housing, that is, an orthographic projection area of the opening on the bottom surface of the housing is smaller than an area of the bottom surface of the housing, as the case may be.
On the basis of any of the above embodiments, in an alternative embodiment of the present application, the semiconductor substrate to be processed is a substrate made of a iii-v compound, such as a GaAs substrate, an InP substrate, or a GaP substrate, but the present application is not limited thereto, and in other embodiments of the present application, the semiconductor substrate to be processed may also be a semiconductor substrate made of other materials, as the case may be.
Optionally, in addition to any of the above embodiments, in an embodiment of the present application, the first cleaning liquid is an acidic solution or an alkaline solution, but the present application is not limited thereto, and in other embodiments of the present application, the first cleaning liquid may be other corrosive solutions as long as the first cleaning liquid can be used for cleaning the etched region on the back surface of the semiconductor substrate.
The processing apparatus of semiconductor substrate that this application embodiment provided, when the inconsistent phenomenon of colour appears in the back of semiconductor substrate, can directly with the semiconductor substrate is placed on the absorption piece, utilize absorption piece with the adsorption affinity between the semiconductor substrate is right the semiconductor substrate is fixed, then, utilize first washing liquid in the washing piece is right the corruption region at the back of semiconductor substrate washs to alleviate the inconsistent phenomenon of colour in semiconductor substrate back corruption region and the region that is not corroded, make the colour in semiconductor substrate back corruption region and the region that is not corroded tends to unanimously.
Therefore, the processing device of the semiconductor substrate provided by the embodiment of the application can perform local cleaning on the corroded area of the back surface of the semiconductor substrate, so that the corroded part of the back surface of the semiconductor substrate is effectively removed, the part, which is not corroded, of the semiconductor substrate is not influenced, the normal processing of the semiconductor substrate is not influenced, re-polishing or even scrapping is not needed, the yield of the semiconductor substrate is improved, and the cost of the semiconductor substrate is reduced.
On the basis of any one of the above embodiments, in an embodiment of the present application, the adsorbing member is an adsorbing body adsorbing a non-corrosive liquid. Optionally, in an embodiment of the present application, the adsorption body is a sponge, the adsorption member is a sponge soaked with water, so as to utilize the adsorption force between the adsorption member and the semiconductor substrate, fix the position of the semiconductor substrate, avoid the semiconductor substrate from slipping off, and simultaneously make the surface of the adsorption member be a flexible surface, avoid the contact surface of the adsorption member and the semiconductor substrate from causing mechanical damage such as scratch to the main surface of the semiconductor substrate, but the present application does not limit this, in other embodiments of the present application, the adsorption body may also be other materials with certain water absorption and soft texture, such as polyvinyl alcohol material, etc., as long as it is ensured that the adsorption body has certain adsorption force to the semiconductor substrate after absorbing water, and can fix the position of the semiconductor substrate, and after the adsorption body absorbs water, the contact surface of the adsorption body and the semiconductor substrate does not cause mechanical damage such as scratches on the main surface of the semiconductor substrate.
In the above embodiments, although the liquid adsorbed in the adsorbing member is water, the present application does not limit this, and in other embodiments of the present application, the liquid adsorbed in the adsorbing member may also be a non-corrosive solution such as IPA (isopropyl amine), deionized water, or alcohol, as the case may be.
It should be noted that, in the embodiment of the present application, the adsorbing member may be formed by wetting all of the adsorbing body with a non-corrosive liquid, or may be formed by wetting part of the adsorbing body with a non-corrosive liquid, which is not limited in this application, as long as it is ensured that the adsorbing force between the adsorbing member and the semiconductor substrate can fix the semiconductor substrate, and it is enough to avoid that the position of the semiconductor substrate is changed in the process of cleaning the semiconductor substrate with the first cleaning solution.
Optionally, on the basis of the above embodiment, in an embodiment of the present application, the receiving space of the first support frame is filled with a non-corrosive liquid to ensure that the adsorption body is completely soaked by the non-corrosive liquid located in the receiving space of the first support frame, but this application does not limit this, depending on the situation.
On the basis of any of the above embodiments, in one embodiment of the present application, continuing with fig. 1, the cleaning member 5 comprises: a burette 51 and a reservoir 52 fixedly connected to the burette 51.
In addition, in the processing apparatus provided in the embodiment of the present application, when the preset region on the back surface of the semiconductor substrate is cleaned by using the first cleaning solution, the chemical liquid flow rate of the first cleaning solution may be calculated based on the size and the degree of the etched region on the back surface of the semiconductor substrate, and then the first cleaning solution is dropped on the preset region on the back surface of the semiconductor substrate through the burette of the cleaning member to clean the preset region on the back surface of the semiconductor substrate.
Specifically, in an embodiment of the present application, the area of the predetermined region on the back surface of the semiconductor substrate is S, and since the thickness of the droplets on the semiconductor substrate is small, assuming that the thickness is Hmm (e.g., 1mm), the volume of the first cleaning solution is S × H.
Optionally, in an embodiment of the present application, the burette is provided with a scale, so that when the etching area on the back surface of the semiconductor substrate is cleaned by the first cleaning liquid in the cleaning member, the amount of the liquid medicine dropping to the etching area on the back surface of the semiconductor substrate is controlled by the scale on the burette.
On the basis of the above embodiment, in an embodiment of the present application, the liquid storage tank is a rubber liquid storage tank, and when in specific use, the first cleaning liquid in the cleaning member flows out by squeezing the liquid storage tank and is dripped to a preset area on the back surface of the semiconductor substrate; in another embodiment of the present application, as shown in fig. 2, the liquid storage tank 52 may be a rubber liquid storage tank, or a liquid storage tank made of other materials, and the burette 51 is provided with a first control valve 53, so that when in specific use, the amount of the liquid medicine of the first cleaning liquid flowing out of the cleaning member 5 is controlled by controlling the first control valve 53. The application is not limited to this, and as the case may be,
on the basis of any one of the above embodiments, in an embodiment of the present application, a second cleaning liquid is provided in the casing, and the second cleaning liquid is a non-corrosive liquid, so that after the first cleaning liquid is used to clean the corroded area of the back surface of the semiconductor substrate, the second cleaning liquid is used to clean the back surface of the semiconductor substrate, thereby reducing the residual concentration of the first cleaning liquid on the back surface of the semiconductor substrate, and avoiding that the first cleaning liquid on the back surface of the semiconductor substrate continues to corrode the preset area of the back surface of the semiconductor substrate, which causes the color of the preset area of the back surface of the semiconductor substrate to be inconsistent with that of other areas.
Optionally, on the basis of the foregoing embodiment, in an embodiment of the present application, a surface of the second cleaning liquid is lower than a surface of the semiconductor substrate on a side facing the adsorbing member, so that the etching area on the back surface of the semiconductor substrate is cleaned by the first cleaning liquid without being affected by the second cleaning liquid.
In addition to the above embodiments, in an embodiment of the present invention, on the basis of ensuring that the surface of the second cleaning liquid is lower than the surface of the semiconductor substrate on the side facing the adsorbing member, the smaller the distance between the surface of the second cleaning liquid and the surface of the semiconductor substrate on the side facing the adsorbing member is, the better, so that after the etching region on the back surface of the semiconductor substrate is cleaned by the first cleaning liquid, the second cleaning liquid can be used for cleaning the back surface of the semiconductor substrate quickly, the time for diluting the first cleaning liquid remaining in the etching region on the back surface of the semiconductor substrate can be shortened, and the etching caused by the first cleaning liquid after the back surface of the semiconductor substrate is cleaned by the first cleaning liquid can be avoided.
On the basis of any of the above embodiments, in an embodiment of the present application, the second cleaning liquid is deionized water, but the present application is not limited thereto, and in other embodiments of the present application, the second cleaning liquid may also be other non-corrosive liquid, as the case may be.
On the basis of any of the above embodiments, in an embodiment of the present application, as shown in fig. 2, the housing 1 has a liquid inlet 12, so that a second cleaning liquid is injected into the housing 1 through the liquid inlet 12. Optionally, the height of the liquid inlet on the housing is lower than that of the surface of the semiconductor substrate facing the adsorption member after the semiconductor substrate is placed on the surface of the adsorption member, so as to avoid impact damage to the semiconductor substrate caused by injection liquid flow when a second cleaning liquid is injected into the housing through the liquid inlet after the first cleaning liquid is used to clean a corrosion region on the back surface of the semiconductor substrate, or to cause the semiconductor substrate to slide off from the surface of the adsorption member.
Alternatively, on the basis of the above-mentioned embodiment, in an embodiment of the present application, as shown in fig. 2, a second control valve 14 is provided on the liquid inlet 12 of the housing 1, so as to control the amount of the second cleaning liquid flowing into the housing 1 from the liquid inlet 12 by using the second control valve 14.
It should be noted that, when the semiconductor substrate to be processed is processed by using the processing apparatus for a semiconductor substrate provided in the embodiment of the present application, after the semiconductor substrate to be processed is placed on the surface of the adsorption member, the second cleaning liquid is injected into the housing until the surface height of the second cleaning liquid is close to the upper surface height of the adsorption member, then the semiconductor substrate to be processed is placed on the surface of the adsorption member, the corrosion area on the back of the semiconductor substrate to be processed is cleaned by using the first cleaning liquid, after the corrosion area on the back of the semiconductor substrate to be processed is cleaned by using the first cleaning liquid, the second cleaning liquid is continuously injected into the housing through the liquid inlet, so that the surface of the second cleaning liquid quickly dips into the back of the semiconductor substrate, and the first cleaning liquid residue on the back of the semiconductor substrate is quickly diluted, And flushing to avoid the continuous corrosion of the first cleaning liquid residue on the back surface of the semiconductor substrate.
On the basis of any of the above embodiments, in another embodiment of the present application, as shown in fig. 2, the housing 1 further has a liquid outlet 13, so as to discharge the second cleaning liquid in the housing 1 through the liquid outlet 13, and optionally, the liquid outlet is located at the bottom of the housing, but the present application is not limited thereto, as the case may be.
Alternatively, on the basis of the above embodiment, in an embodiment of the present application, as shown in fig. 2, a third control valve 15 is disposed on the liquid outlet 13 of the housing 1, so as to control the amount of the second cleaning liquid flowing out of the housing 1 from the liquid outlet 13 by using the third control valve 15.
On the basis of any of the above embodiments, in an embodiment of the present application, as shown in fig. 3, the first support frame 4 includes:
a first supporting member 41, where the first supporting member 41 has an accommodating space, and the adsorbing member 2 is located in the accommodating space to ensure that the position of the semiconductor substrate 3 does not change during the process of cleaning the back surface of the semiconductor substrate 3, optionally, the first supporting member 41 includes a supporting surface and a supporting sidewall fixedly connected to the supporting surface, the adsorbing member 2 is located in the accommodating space surrounded by the supporting surface and the supporting sidewall, and the bottom surface of the adsorbing member 2 is in contact with the supporting surface;
On the basis of any of the above embodiments, in an embodiment of the present application, as shown in fig. 2, the processing apparatus further includes: and the second support frame 6 is used for fixing the cleaning piece 5 so as to avoid the change of the position of the cleaning piece 3 in the process of cleaning the semiconductor substrate 3 by using the cleaning piece 5.
Therefore, the processing device of the semiconductor substrate provided by the embodiment of the application can locally clean the corroded area of the back surface of the semiconductor substrate, effectively remove the corroded part of the back surface of the semiconductor substrate, does not affect the part, which is not corroded, of the semiconductor substrate, relieves the color difference between the corroded area and the non-corroded area of the back surface of the semiconductor substrate, so that the normal processing of the semiconductor substrate is not affected, the semiconductor substrate does not need to be re-polished or even scrapped, the yield of the semiconductor substrate is improved, and the cost of the semiconductor substrate is reduced.
Correspondingly, an embodiment of the present application further provides a processing method of a semiconductor substrate, which is applied to the processing apparatus of a semiconductor provided in any of the foregoing embodiments, and as shown in fig. 4, the processing method includes:
s1: placing a semiconductor substrate to be processed on the surface of a suction piece in a semiconductor substrate processing device, wherein the main surface of the semiconductor substrate faces the suction piece, and the back surface of the semiconductor substrate faces away from the suction piece;
s2: cleaning a preset area on the back surface of the semiconductor substrate for the first time by using a first cleaning liquid in the cleaning piece;
the preset area on the back surface of the semiconductor substrate is different from other areas in color, and the first cleaning liquid is corrosive liquid medicine.
In the processing method provided in the embodiment of the present application, when the preset region of the back surface of the semiconductor substrate is cleaned by using the first cleaning solution, the chemical liquid flow rate of the first cleaning solution may be calculated based on the size and the degree of the etched region of the back surface of the semiconductor substrate, and then the first cleaning solution is dropped on the preset region of the back surface of the semiconductor substrate through the burette of the cleaning member to perform the first cleaning on the preset region of the back surface of the semiconductor substrate.
Specifically, in an embodiment of the present application, the area of the predetermined region on the back surface of the semiconductor substrate is S, and since the thickness of the droplets on the semiconductor substrate is small, assuming that the thickness is Hmm (e.g., 1mm), the volume of the first cleaning solution is S × H.
According to the semiconductor substrate processing method provided by the embodiment of the application, when the back surface of the semiconductor substrate has the color inconsistency, the semiconductor substrate can be directly placed on the adsorption piece, the adsorption piece and the semiconductor substrate are fixed by utilizing the adsorption force between the adsorption piece and the semiconductor substrate, then the corrosion area on the back surface of the semiconductor substrate is cleaned by utilizing the first cleaning liquid in the cleaning piece, so that the color inconsistency of the corrosion area on the back surface of the semiconductor substrate and the color inconsistency of the corrosion area on the non-corroded area is relieved, and the color of the corrosion area on the back surface of the semiconductor substrate and the color of the non-corroded area tend to be consistent.
Therefore, the method for processing the semiconductor substrate provided by the embodiment of the application can be used for locally cleaning the corrosion area on the back surface of the semiconductor substrate, effectively removing the corroded part on the back surface of the semiconductor substrate, and does not influence the part, which is not corroded, of the semiconductor substrate, so that the normal processing of the semiconductor substrate is not influenced, re-polishing is not needed, even scrapping is not needed, the yield of the semiconductor substrate is improved, and the cost of the semiconductor substrate is reduced.
On the basis of any of the above embodiments, in an embodiment of the present application, as shown in fig. 5, the method further includes:
s3: and carrying out secondary cleaning on the back surface of the semiconductor substrate by using a second cleaning solution, wherein the second cleaning solution is a non-corrosive liquid.
By utilizing the semiconductor substrate processing method provided by the embodiment of the application, when a semiconductor substrate to be processed is processed, after the semiconductor substrate to be processed is placed on the surface of the adsorption part, the second cleaning liquid is injected into the shell firstly until the surface height of the second cleaning liquid is close to the upper surface height of the adsorption part, then the semiconductor substrate to be processed is placed on the surface of the adsorption part, the corrosion area on the back of the semiconductor substrate to be processed is cleaned by utilizing the first cleaning liquid, after the corrosion area on the back of the semiconductor substrate to be processed is cleaned by utilizing the first cleaning liquid, the second cleaning liquid is continuously injected into the shell through the liquid inlet, so that the surface of the second cleaning liquid quickly immerses the back of the semiconductor substrate, and the first cleaning liquid residue on the back of the semiconductor substrate is quickly diluted, And flushing to avoid the continuous corrosion of the first cleaning liquid residue on the back surface of the semiconductor substrate.
Optionally, on the basis of the foregoing embodiment, in an embodiment of the present application, a surface of the second cleaning liquid is lower than a surface of the semiconductor substrate on a side facing the adsorbing member, so that the etching area on the back surface of the semiconductor substrate is cleaned by the first cleaning liquid without being affected by the second cleaning liquid.
In addition to the above embodiments, in an embodiment of the present invention, on the basis of ensuring that the surface of the second cleaning liquid is lower than the surface of the semiconductor substrate on the side facing the adsorbing member, the smaller the distance between the surface of the second cleaning liquid and the surface of the semiconductor substrate on the side facing the adsorbing member is, the better, so that after the etching region on the back surface of the semiconductor substrate is cleaned by the first cleaning liquid, the second cleaning liquid can be used for cleaning the back surface of the semiconductor substrate quickly, the time for diluting the first cleaning liquid remaining in the etching region on the back surface of the semiconductor substrate can be shortened, and the etching caused by the first cleaning liquid after the back surface of the semiconductor substrate is cleaned by the first cleaning liquid can be avoided.
On the basis of any of the above embodiments, in an embodiment of the present application, the second cleaning liquid is deionized water, but the present application is not limited thereto, and in other embodiments of the present application, the second cleaning liquid may also be other non-corrosive liquid, as the case may be.
In summary, the processing method of the semiconductor substrate provided by the embodiment of the present application can perform local cleaning on the etched region on the back surface of the semiconductor substrate, effectively remove the etched portion on the back surface of the semiconductor substrate, and does not affect the non-etched portion of the semiconductor substrate, so that the normal processing of the semiconductor substrate is not affected, re-polishing is not needed, and even scrapping is performed, the yield of the semiconductor substrate is improved, and the cost of the semiconductor substrate is reduced.
In the description, each part is described in a progressive manner, each part is emphasized to be different from other parts, and the same and similar parts among the parts are referred to each other.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the application. Thus, the present application is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (8)
1. An apparatus for processing a semiconductor substrate, comprising:
a housing having an opening on an upper surface thereof;
the adsorption piece is positioned in the shell and used for adsorbing a semiconductor substrate to be processed, and when the semiconductor substrate is positioned on the surface of the adsorption piece, the back surface of the semiconductor substrate faces the opening of the shell;
the first support frame is positioned in the shell and provided with an accommodating space, and the adsorption piece is positioned in the accommodating space;
the cleaning piece is provided with a first cleaning liquid, and the first cleaning liquid cleans a preset area on the back surface of the semiconductor substrate through the opening of the shell;
the preset area on the back surface of the semiconductor substrate is different from other areas in color, and the first cleaning liquid is corrosive liquid medicine.
2. The processing apparatus according to claim 1, wherein a second cleaning liquid is provided in the housing, a surface of the second cleaning liquid is lower than a surface of the semiconductor substrate on a side facing the adsorbing member, and the second cleaning liquid is a non-corrosive liquid.
3. The processing apparatus according to claim 2, wherein the housing has a liquid inlet.
4. The processing apparatus according to claim 3, wherein the height of the liquid inlet on the housing is lower than the surface of the side of the semiconductor substrate facing the adsorption member after the semiconductor substrate is placed on the surface of the adsorption member.
5. The processing apparatus of claim 1, wherein the adsorbent member is an adsorbent body that adsorbs a non-corrosive liquid.
6. The processing device according to claim 5, wherein the absorbent body is a sponge.
7. The processing apparatus according to claim 1, wherein the cleaning member comprises: a burette and a liquid storage tank fixedly connected with the burette.
8. The processing apparatus as in claim 7, further comprising: and the second support frame is used for fixing the cleaning piece.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201921118001.0U CN209947809U (en) | 2019-07-16 | 2019-07-16 | Semiconductor substrate processing apparatus |
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| CN201921118001.0U CN209947809U (en) | 2019-07-16 | 2019-07-16 | Semiconductor substrate processing apparatus |
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| CN209947809U true CN209947809U (en) | 2020-01-14 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110211905A (en) * | 2019-07-16 | 2019-09-06 | 广东先导先进材料股份有限公司 | The processing unit and processing method of semiconductor substrate |
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Effective date of registration: 20230626 Address after: 511517 workshop a, No.16, Chuangxing Third Road, high tech Zone, Qingyuan City, Guangdong Province Patentee after: Guangdong lead Microelectronics Technology Co.,Ltd. Address before: 511517 area B, no.27-9 Baijia Industrial Park, Qingyuan high tech Zone, Guangdong Province Patentee before: FIRST SEMICONDUCTOR MATERIALS Co.,Ltd. |