CN209947802U - Developing processing device - Google Patents

Developing processing device Download PDF

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Publication number
CN209947802U
CN209947802U CN201920699633.4U CN201920699633U CN209947802U CN 209947802 U CN209947802 U CN 209947802U CN 201920699633 U CN201920699633 U CN 201920699633U CN 209947802 U CN209947802 U CN 209947802U
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wafer
cleaning liquid
developing
emergency
nozzle
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平井義和
矢野和利
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/3042—Imagewise removal using liquid means from printing plates transported horizontally through the processing stations
    • G03F7/3057—Imagewise removal using liquid means from printing plates transported horizontally through the processing stations characterised by the processing units other than the developing unit, e.g. washing units
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Epidemiology (AREA)
  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Environmental & Geological Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Coating Apparatus (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The utility model provides a develop processing apparatus which can rapidly stop the progress of the developing processing when the abnormal condition occurs in the developing processing procedure. The developing processing device performs development of a substrate, and includes: a mounting unit for mounting the substrate; and one or more emergency cleaning liquid nozzles provided separately from the normal cleaning nozzles, for ejecting a cleaning liquid toward the substrate on the mounting portion when an abnormality occurs in the developing apparatus.

Description

Developing processing device
Technical Field
The present disclosure relates to a developing processing apparatus.
Background
For example, in a photolithography step in a manufacturing process of a semiconductor device, a resist coating process for forming a resist film by coating a resist liquid on a semiconductor wafer (hereinafter, referred to as a "wafer") as a substrate, an exposure process for exposing the resist film to a predetermined pattern, a heating process (post-exposure baking) for promoting a chemical reaction in the resist film after the exposure, a developing process for developing the resist film after the exposure with a developer, and the like are sequentially performed to form a predetermined resist pattern on the wafer.
In the above-described developing process, for example, a developing solution is supplied from a developing solution supply nozzle onto a wafer held by a spin chuck to form a liquid film of the developing solution on the surface of the wafer, thereby advancing the development of the wafer. When the developing process is completed, a cleaning liquid such as pure water is supplied to the wafer through the cleaning liquid supply nozzle, and the wafer is rotated at a high speed by the spin chuck, whereby the cleaning liquid and the developing liquid are thrown off to clean and dry the surface of the wafer, and the developing process is completed.
The developing process is usually performed for a predetermined time required for development to progress, but if the operation of the apparatus is stopped with the developer supplied onto the wafer due to, for example, a failure or an erroneous operation, the developing process is performed for a time longer than the predetermined time. When the development treatment is performed for a predetermined time period in this manner, defects such as resist pattern collapse or resist peeling may occur on the wafer. In order to prevent such a wafer defect that occurs when the developing time is exceeded due to the stoppage of the apparatus, it is necessary to temporarily stop the developing process on the wafer when the operation of the apparatus is stopped, for example.
In this regard, patent document 1 discloses the following: when a trouble occurs in the substrate processing apparatus and the coating and developing apparatus is stopped, the developing solution on the substrate is thrown out when the coating and developing apparatus is restarted, and the rinse solution is supplied from the rinse nozzle used in the normal developing process to clean the wafer substrate (hereinafter referred to as "liquid stop process"). By cleaning the wafer with such a liquid termination process, the progress of development on the wafer can be prevented.
Patent document 1: japanese patent laid-open publication No. 2002-260995
SUMMERY OF THE UTILITY MODEL
Problem to be solved by utility model
As described above, when the operation of the developing apparatus is stopped, it is important to prevent the progress of the development on the wafer. The present disclosure relates to a developing process apparatus capable of quickly preventing progress of a developing process in the case where a failure occurs in a developing process step.
Means for solving the problems
In order to solve the above problem, one aspect of the technology according to the present disclosure is a developing apparatus for developing a substrate, the developing apparatus including: a mounting unit for mounting the substrate; and one or more emergency cleaning liquid nozzles provided separately from the normal cleaning nozzles, for ejecting a cleaning liquid toward the substrate on the mounting portion when an abnormality occurs in the developing apparatus.
Effect of the utility model
According to the technique of the present disclosure, when a failure occurs in the developing process, the progress of the developing process can be quickly prevented.
Drawings
Fig. 1 is a plan view schematically showing the configuration of a substrate processing system in which a development processing apparatus according to an embodiment is mounted.
Fig. 2 is a front view schematically showing the configuration of the substrate processing system of fig. 1.
Fig. 3 is a rear view schematically showing the configuration of the substrate processing system of fig. 1.
Fig. 4 is a vertical cross-sectional view schematically showing the configuration of the developing apparatus according to the embodiment.
Fig. 5 is a cross-sectional view schematically showing the configuration of the developing apparatus according to the embodiment.
Fig. 6 is a flowchart showing an example of the development processing.
Fig. 7 is a flowchart showing an example of the emergency operation according to the embodiment.
Fig. 8 is an explanatory diagram showing the ejection target area of the emergency cleaning liquid nozzle in the emergency operation of the developing apparatus according to the embodiment.
Fig. 9 is a vertical cross-sectional view schematically showing an emergency operation of the developing apparatus according to the embodiment.
Fig. 10 is an explanatory diagram showing an example of the arrangement of other emergency cleaning liquid nozzles in which the areas to be sprayed by the two emergency cleaning liquid nozzles do not interfere with each other.
Fig. 11 is an explanatory diagram showing another arrangement example in which the areas to be sprayed by the three emergency cleaning liquid nozzles do not interfere with each other.
Detailed Description
An example of the embodiment will be described below with reference to the drawings. In the present specification and the drawings, elements having substantially the same functional configuration are denoted by the same reference numerals, and redundant description thereof is omitted.
Fig. 1 is a schematic top explanatory view showing a configuration of a substrate processing system 1 including a developing apparatus according to an embodiment. Fig. 2 and 3 are a front view and a rear view schematically showing an outline of the internal configuration of the substrate processing system 1, respectively.
As shown in fig. 1, the substrate processing system 1 has a configuration in which a cassette station 10 for carrying in and out a cassette C containing a plurality of wafers W, a processing station 11 including a plurality of various processing apparatuses for performing predetermined processing on the wafers W, and an interface station 13 adjacent to the processing station 11 and delivering and receiving the wafers W to and from the exposure apparatus 12 are integrally connected to each other.
The cassette station 10 is provided with a cassette mounting table 20. The cassette mounting table 20 is provided with a plurality of cassette mounting plates 21, and the cassette mounting plates 21 are used for mounting the cassettes C when the cassettes C are carried in and out from the outside of the substrate processing system 1.
As shown in fig. 1, the cassette station 10 is provided with a wafer transfer device 23 that is movable on a transfer path 22 extending in the X direction. The wafer transfer device 23 is also movable in the vertical direction and around the vertical axis (θ direction), and is capable of transferring the wafer W between the cassettes C on the cassette mounting plates 21 and a transfer device of the third block G3 of the process station 11, which will be described later.
The processing station 11 is provided with a plurality of, for example, four blocks including various devices, i.e., a first block G1 to a fourth block G4. For example, a first block G1 is provided on the front side (negative X-direction side in fig. 1) of the processing station 11, and a second block G2 is provided on the back side (positive X-direction side in fig. 1, upper side in the drawing) of the processing station 11. The third block G3 described above is provided on the cassette station 10 side (negative Y-direction side in fig. 1) of the processing station 11, and the fourth block G4 is provided on the interface station 13 side (positive Y-direction side in fig. 1) of the processing station 11.
For example, as shown in fig. 2, in the first block G1, a plurality of liquid processing apparatuses, for example, a developing apparatus 30 for developing the wafer W, a lower anti-reflection film forming apparatus 31 for forming an anti-reflection film (hereinafter referred to as "lower anti-reflection film") on the lower layer of the resist film of the wafer W, a resist coating apparatus 32 for coating a resist liquid on the wafer W to form a resist film, and an upper anti-reflection film forming apparatus 33 for forming an anti-reflection film (hereinafter referred to as "upper anti-reflection film") on the upper layer of the resist film of the wafer W, are arranged in this order from the bottom.
For example, three developing apparatuses 30, three lower antireflection film forming apparatuses 31, three resist coating apparatuses 32, and three upper antireflection film forming apparatuses 33 are arranged in a horizontal direction. The number and arrangement of the developing apparatus 30, the lower anti-reflection film forming apparatus 31, the resist coating apparatus 32, and the upper anti-reflection film forming apparatus 33 can be arbitrarily selected.
The lower anti-reflection film forming apparatus 31, the resist coating apparatus 32, and the upper anti-reflection film forming apparatus 33 are, for example, spin-coated with a predetermined processing liquid on the wafer W. In the spin coating, for example, a coating liquid is discharged from a coating nozzle onto the wafer W, and the wafer W is rotated to spread the coating liquid on the surface of the wafer W. The configuration of the development processing apparatus 30 to which the present disclosure is directed will be described later.
For example, as shown in fig. 3, the second block G2 includes a hydrophobizing apparatus 40, a peripheral exposure apparatus 41, and heat treatment apparatuses 42 and 43 for performing cooling and heating processes on the wafer W. The arrangement and number of these devices are arbitrary.
For example, as shown in fig. 2 and 3, the third block G3 includes a plurality of delivery devices 50 to 56 arranged in this order from the bottom. In the fourth block G4, as shown in fig. 3, a plurality of delivery devices 60 to 62 are provided in this order from the bottom.
As shown in fig. 1, a wafer transfer area D is formed in an area surrounded by the first block G1 to the fourth block G4. In the wafer transfer area D, a plurality of wafer transfer devices 70 are arranged, and each wafer transfer device 70 includes a transfer arm 70a that is movable in, for example, the Y direction, the X direction, the θ direction, and the vertical direction. The wafer transfer device 70 moves in the wafer transfer area D, and can transfer the wafer W between predetermined devices located in the peripheral first block G1, second block G2, third block G3, and fourth block G4.
In the wafer transfer area D, as shown in fig. 3, a shuttle 80 is provided for linearly transferring the wafer W between the third block G3 and the fourth block G4.
The shuttle conveying device 80 is movable linearly in the Y direction of fig. 3, for example. The shuttle 80 can move in the Y direction while supporting the wafer W, and conveys the wafer W between the delivery device 52 of the third block G3 and the delivery device 62 of the fourth block G4.
As shown in fig. 1, a wafer carrier 81 is provided in the vicinity of the third block G3 on the positive X-direction side. The wafer transfer device 81 includes a transfer arm 81a that is movable in, for example, the X direction, the θ direction, and the up-down direction. The wafer transfer device 81 can move up and down while supporting the wafer W, and transfer the wafer W to each transfer device in the third block G3.
The interface station 13 is provided with a wafer transfer device 90 and a delivery device 91. The wafer transfer device 90 includes a transfer arm 90a that is movable in, for example, the Y direction, the θ direction, and the vertical direction. The wafer transfer device 90 can support the wafer W on a transfer arm, for example, and transfer the wafer W between the delivery device in the fourth block G4, the delivery device 91, and the exposure device 12.
As shown in fig. 1, the substrate processing system 1 described above is provided with a control unit 100. The control unit 100 is, for example, a computer and has a program storage unit (not shown). The program storage unit stores a program for controlling the processing of the wafer W in the substrate processing system 1. The program storage unit also stores programs for controlling the operations of the drive systems of the various processing apparatuses and the transport apparatus described above, and controlling the operations of the developing apparatus described below. The program may be recorded in a computer-readable storage medium such as a computer-readable Hard Disk (HD), a Flexible Disk (FD), a Compact Disc (CD), a magneto-optical disk (MO), or a memory card, and installed from the storage medium to the control unit 100.
Next, a wafer process performed by using the substrate processing system 1 configured as described above will be described.
First, the cassette C containing a plurality of wafers W is loaded into the cassette station 10 of the substrate processing system 1 and placed on the cassette mounting plate 21. Next, the wafers W in the cassette C are sequentially taken out by the wafer transfer device 23, and transferred to the delivery device 53 of the third block G3 of the processing station 11.
The wafer W conveyed to the transfer device 53 is conveyed to the heat treatment device 42 of the second block G2 by the wafer conveying device 70, and temperature adjustment processing is performed. Next, the wafer W is transported by the wafer transport apparatus 70 to, for example, the bottom anti-reflection film forming apparatus 31 of the first block G1, and a bottom anti-reflection film is formed on the wafer W. Thereafter, the wafer W is subjected to heat treatment in the heat treatment apparatus 42 carried to the second block G2, and then returned to the transfer apparatus 53 of the third block G3.
The wafer W returned to the delivery device 53 is transported to the delivery device 54 of the third block G3 by the wafer transport device 81. Next, the wafer W is transported to the hydrophobizing apparatus 40 of the second block G2 by the wafer transport apparatus 70, and hydrophobizing is performed.
The wafer W subjected to the hydrophobization treatment is transferred to the resist coating apparatus 32 by the wafer transfer apparatus 70, and a resist film is formed on the wafer W. Thereafter, the wafer W is transferred to the heat treatment apparatus 43 by the wafer transfer apparatus 70, subjected to the pre-baking treatment, and transferred to the delivery apparatus 55 of the third block G3.
The wafer W conveyed to the transfer device 55 is conveyed to the upper anti-reflection film forming device 33 by the wafer conveying device 70, and an upper anti-reflection film is formed on the wafer W. Thereafter, the wafer W is conveyed to the heat treatment apparatus 42 by the wafer conveyance apparatus 70, and temperature adjustment is performed by heating. After the temperature adjustment, the wafer W is transported to the peripheral exposure apparatus 41, and peripheral exposure processing is performed.
The wafer W subjected to the peripheral exposure processing is transferred to the transfer device 56 of the third block G3 by the wafer transfer device 70.
The wafer W conveyed to the delivery unit 56 is conveyed to the delivery unit 52 by the wafer conveying unit 81, and is conveyed to the delivery unit 62 of the fourth block G4 by the shuttle conveying unit 80. The wafer W conveyed to the transfer device 62 is conveyed to the exposure device 12 by the wafer conveyance device 90 of the interface station 13, and exposure processing is performed in a predetermined pattern.
The wafer W subjected to the exposure process is transferred to the delivery apparatus 60 of the fourth block G4 by the wafer transfer apparatus 90. Thereafter, the wafer is transported to the heat treatment apparatus 43 by the wafer transport apparatus 70, and the post-exposure baking process is performed.
The wafer W subjected to the post-exposure baking process is transferred to the developing apparatus 30 by the wafer transfer apparatus 70 and developed. After the development is completed, the wafer W is transported to the heat treatment apparatus 43 by the wafer transport apparatus 70, and post-baking treatment is performed.
Thereafter, the wafer W is carried to the delivery device 50 of the third block G3 by the wafer carrier device 70, and is carried to the cassette C of the predetermined cassette placement plate 21 by the wafer carrier device 23 of the cassette station 10. Thus, the series of photolithography steps is completed.
Next, the structure of the development processing apparatus 30 according to the embodiment will be described with reference to fig. 4 and 5.
As shown in fig. 4, the developing apparatus 30 includes a process container 110 whose interior can be sealed. A transfer port (not shown) for transferring the wafer W is formed in a side surface of the processing container 110.
The processing container 110 includes a mounting portion 120 on which a substrate is mounted. The mounting unit 120 includes a spin chuck 121 for horizontally mounting the wafer W by, for example, vacuum suction, and is configured to be rotatable at a predetermined speed by a chuck driving unit 122 such as a motor. The chuck driving unit 122 is provided with an elevation driving mechanism such as an air cylinder, not shown, and the spin chuck 121 is configured to be freely elevated and lowered by the elevation driving mechanism.
A cup 123 is provided around the spin chuck 121 to receive and collect a liquid such as a developer or a cleaning liquid scattered or dropped from the wafer W. The cup 123 includes a wall surface portion 123a extending in the vertical direction, an inclined portion 123b provided at an upper end of the wall surface portion 123a and inclined toward the inner circumferential direction of the cup 123, and a bottom surface portion 123c provided at a lower end of the wall surface portion 123 a. The bottom surface 123c of the cup 123 is connected to a discharge pipe 124 for discharging the collected liquid and an exhaust pipe 125 for exhausting the atmosphere in the cup 123.
The cup 123 is configured to be freely movable up and down by a not-shown cup lifting mechanism. The cup elevating mechanism lowers and retreats the cup 123 so as not to interfere with the carrying in and out of the wafer W when the wafer W is carried into and out of the development processing apparatus 30. When the wafer W is placed on the spin chuck 121 and development processing is performed, the cup 123 is raised, and the developer and the cleaning liquid supplied to the wafer W are prevented from scattering around.
As shown in fig. 5, a guide rail 130 extending in the Y direction (the left-right direction in fig. 5) is formed on the X direction negative side (the lower direction in fig. 5) of the cup 132. The guide rail 130 is formed, for example, from the outside of the Y-direction negative side (left direction in fig. 5) of the cup 123 to the outside of the Y-direction positive side (right direction in fig. 5) of the cup 123. For example, arms 131 and 132 are attached to the guide rail 130.
A developer supply nozzle 133 for supplying a developer is supported by the first arm 131. The first arm 131 is movable on the guide rail 130 by the nozzle driving unit 134. Thereby, the developer supply nozzle 133 moves from the standby portion 135 provided outside the cup 123 on the negative Y-direction side to above the center of the wafer W in the cup 123. Further, the nozzle driving unit 134 allows the first arm 131 to be freely moved up and down, and the height of the developer supply nozzle 133 can be adjusted. As the developer, for example, tetramethylammonium hydroxide (TMAH) is used.
A rinse liquid supply nozzle 136 for supplying a rinse liquid and a solvent supply nozzle 137 for supplying a solvent are supported by the second arm 132. The second arm 132 is movable on the guide rail 130 by a nozzle driving unit 138. Thus, the rinse liquid supply nozzle 136 and the solvent supply nozzle 137 can be moved from the standby unit 139 provided outside the cup 123 in the positive Y-direction to above the center of the wafer W in the cup 123. Further, the second arm 132 is movable up and down by the nozzle driving unit 138, and the heights of the rinse liquid supply nozzle 136 and the solvent supply nozzle 137 can be adjusted. Examples of the rinse solution include a surfactant-containing rinse solution prepared by mixing a surfactant solution and pure water, DIW (deionized water) as an example of an "aqueous cleaning solution", and pure water. In addition, as the solvent, for example, an aqueous solution of a water-soluble polymer is used.
As shown in fig. 4, a filter unit 140 for forming a clean down-flow in the processing container 110 is provided at an upper portion in the processing container 110. The filter unit 140 further cleans the clean gas from the fan filter unit installed at the top of the substrate processing system 1 and supplies the cleaned gas into the processing container 110.
Then, two emergency cleaning liquid nozzles 141, for example, are provided at positions not interfering with the formation of the downward flow near the outer edge portion of the filter unit 140 and not overlapping with the wafer W placed on the spin chuck 121 in a plan view, at an upper portion in the processing container 110.
The emergency cleaning liquid nozzle 141 is configured to spray an emergency cleaning liquid toward the wafer W based on an alarm from the alarm issuing unit 142 for notifying an abnormality when the abnormality occurs in the developing apparatus 30. The emergency cleaning liquid nozzle 141 is formed of, for example, a spray nozzle, and suppresses the sprayed cleaning liquid from spreading to the back surface of the wafer W. Further, as the alarm generating unit 142, for example, a display device for displaying an alarm on a screen, a buzzer for generating an alarm sound, or the like can be considered. As the cleaning liquid for emergency use, for example, DIW or the like is used.
As described above, the emergency cleaning liquid nozzle 141 sprays the cleaning liquid toward the wafer W when an abnormality occurs, for example, when the developing apparatus 30 is stopped suddenly. That is, it is desirable to configure the cleaning liquid ejecting apparatus to be capable of performing the cleaning liquid ejecting operation independently of the stop of the developing apparatus 30 when the abnormality occurs. Therefore, for example, the emergency cleaning liquid supply source 150 connected to the emergency cleaning liquid nozzle 141 is provided separately from the rinse liquid supply source 151 connected to the rinse liquid supply nozzle 136. The emergency cleaning liquid supply source 150 is also provided separately from the developer supply source 152 and the solvent supply source 153.
The emergency cleaning liquid nozzle 141 is provided with an angle adjusting mechanism (not shown) for adjusting the spray direction and spray angle θ of the cleaning liquid sprayed from the emergency cleaning liquid nozzle 141.
Here, a developing method in the developing apparatus 30 will be described with reference to fig. 6. Fig. 6 is a flowchart showing an example of the flow of the development processing. In the following description, for example, a lower layer film such as a Silicon-containing Anti-Reflective Coating (silac-antireflective Coating) is formed on the surface of the wafer W, and a resist film is formed on the lower layer film, and the resist film is subjected to an exposure process and a subsequent heating process.
When developing the wafer W placed on the spin chuck 121, the developer supply nozzle 133 is first moved upward toward the center of the wafer W. Next, the developing solution is discharged from the developing solution supply nozzle 133 onto the wafer W while rotating the wafer W, and a developing solution coating layer (pure) is formed on the entire surface of the wafer W (S1 in fig. 6).
After the developer coating layer is formed, the supply of the developer from the developer supply nozzle 133 is stopped, and the wafer W is, for example, subjected to stationary development for a predetermined time to advance the development of the resist film on the wafer W (S2 in fig. 6). During the development, the developer supply nozzle 133 is retracted out of the cup 123, and the rinse solution supply nozzle 136 and the solvent supply nozzle 137 are moved upward above the center of the wafer W.
When the resist pattern is formed on the wafer W after the predetermined time required for the development progress has elapsed, the solvent is supplied from the solvent supply nozzle 137 to the wafer W, and a liquid film is formed by the solvent (S3 in fig. 6). At this time, the wafer W is rotated by the spin chuck 121 at, for example, 100 to 1500 rpm.
After the solvent is applied, the rinse liquid is supplied from the rinse liquid supply nozzle 136 to the wafer W, and the wafer W is cleaned (S4 in fig. 6). Specifically, the rinse solution is supplied to the wafer W while the wafer W is rotated at, for example, 100 to 500rpm, and the liquid film formed by the solvent on the wafer W is replaced with the rinse solution. Thereafter, the rotation speed of the wafer W is increased, the rinse liquid is spread over the entire surface of the wafer W, and the rinse liquid is spun off to dry the wafer W (S5 in fig. 6). In this case, the wafer W is first rotated at 300 to 1000rpm for 5 to 15 seconds, and then rotated at 1000 to 3000rpm for 10 to 20 seconds. Thus, a series of development processes is completed, and a resist pattern is formed on the wafer W.
In this way, it usually takes a predetermined time for the development process to progress, but when the operation of the apparatus is stopped in the middle of the development process due to, for example, an apparatus failure or an operator's misoperation, the developer remains on the wafer W beyond the predetermined time, and the development process is performed beyond the predetermined time. If the developing treatment is performed for a predetermined time period in this manner, defects such as resist pattern collapse or resist peeling may occur on the wafer W.
When the apparatus is stopped due to the above-described trouble or the like in the development process in the preceding step of semiconductor manufacturing (wafer manufacturing step before dicing), for example, the resist film formed on the wafer W can be peeled off by a strong processing liquid such as SPM (sulfuric acid + hydrogen peroxide solution) (hereinafter referred to as "rework"), and then the wafer W can be coated with the resist liquid again.
However, when the apparatus is stopped in a subsequent step of semiconductor manufacturing (packaging step after dicing), the chip may be already bonded to the device to form a circuit, and thus the device may be damaged when the rework is performed. In other words, in particular, when the operation of the developing apparatus is stopped in the subsequent process, the rework is difficult, and therefore, it is necessary to immediately stop the progress of the developing process on the wafer W.
As a method of preventing the progress of the development process on the wafer W, the liquid stop process described above is exemplified. In the liquid stop process, when the developing apparatus is restarted, the developing solution on the wafer W is thrown out, and the wafer W is cleaned by supplying the rinse solution using the rinse nozzle that performs the normal cleaning process after the development, thereby preventing the progress of the developing process.
However, in the liquid stop process, the cleaning of the wafer W is performed in association with the restart of the developing apparatus, and therefore, for example, when it takes time to restart the apparatus, the predetermined time may be exceeded. Further, for example, when a failure occurs in a rotation driving system or a supply system of the developing apparatus, it is not possible to appropriately perform rotation of the spin chuck and discharge of the rinse liquid, which are necessary to prevent the progress of the developing process. If it takes time to perform the inhibiting operation before the inhibiting operation of the developing process or if the inhibiting operation cannot be performed properly, the wafer W, the chip, or the device is invalidated.
Therefore, the development processing apparatus 30 according to the present disclosure includes one or more emergency rinse liquid nozzles 141 for ejecting a rinse liquid onto the wafer W when an abnormality occurs, and an alarm generating unit 142 for generating an alarm in response to the abnormality of the development processing apparatus 30, separately from the rinse liquid supply nozzle 136 for performing a normal cleaning process after development. When an abnormality occurs in the developing apparatus 30, the emergency cleaning liquid nozzle 141 starts spraying the cleaning liquid toward the wafer W placed on the spin chuck 121 based on the alarm from the alarm generating unit 142. This can stop the progress of the development processing extremely quickly.
An example of an operation when an abnormality occurs in the development processing device 30 (emergency operation) will be described below. Fig. 7 is a flowchart showing an example of operations from when the alarm is issued by the detection alarm issuing unit 142 until the cleaning of the developer on the wafer W is completed in the developing apparatus 30.
When an emergency stop of the operation of the development processing apparatus 30 is detected due to a failure in the development processing apparatus 30 or an apparatus system including the development processing apparatus 30, that is, the substrate processing system 1, or an erroneous operation by an operator (emergency stop detection step), an alarm for warning that an emergency such as an apparatus abnormality occurs is issued by the alarm issuing unit 142 (S11 in fig. 7: alarm issuing step).
Examples of the abnormality of the apparatus include an operational failure of the apparatus such as a failure of the arms 131 and 132 or a failure of the rotation drive system of the spin chuck 121, and an unexpected event such as an operator erroneously opening a door for maintenance and inspection of the system during the operation of the substrate processing system 1.
When the emission is detected during the developing process, a cleaning liquid is sprayed from the emergency cleaning liquid nozzle 141 toward the wafer W placed on the spin chuck 121 in order to prevent the developing process of the wafer W from progressing beyond a predetermined time due to a malfunction or stop of the developing process apparatus 30 (S12 in fig. 7: emergency cleaning process).
In the emergency cleaning step, the entire surface of the wafer W can be cleaned appropriately by rotating the spin chuck 121 at 500rpm to 100rpm, for example, at 200rpm, and diffusing the cleaning liquid sprayed onto the wafer W over the entire surface of the wafer W by centrifugal force. However, for example, in the case where the abnormality of the developing apparatus 30 is caused by the rotation driving system of the spin chuck, that is, the trouble of the spin chuck 121, the spin chuck 121 cannot be rotated, and the cleaning liquid cannot be diffused.
Therefore, for example, in the case where two emergency cleaning liquid nozzles 141 are provided as in the present embodiment, it is preferable to set the ejection target regions A, B on the wafer W to be ejected by the emergency cleaning liquid nozzles 141, 141 as shown in fig. 8. More specifically, the spray center positions of the emergency cleaning liquid nozzles 141 and 141 on the wafer W are set to be shifted from the center of the wafer W. The cleaning liquid sprayed onto the wafer W is set so that the developing liquid and the rinse liquid accumulated on the wafer W are further pushed out from the sprayed region A, B to the outside, and finally all of the developing liquid and the rinse liquid accumulated on the wafer W are washed away by the flow of the cleaning liquid over the entire surface of the wafer W. Thus, for example, even when the spin chuck 121 fails and is unable to rotate, the entire surface of the wafer W can be appropriately cleaned.
In the present embodiment, two emergency cleaning liquid nozzles 141 are provided, but the number is not limited to two, and the entire surface of the wafer W can be appropriately covered by the ejection target area of the cleaning liquid ejected from the emergency cleaning liquid nozzle, or all of the developing liquid and the rinse liquid accumulated on the wafer W can be washed away by the flow of the ejected cleaning liquid. For example, when the diameter of the wafer W is small, the number of the emergency cleaning liquid nozzles 141 may be set to one, whereas when the entire surface of the wafer W is not properly covered by two emergency cleaning liquid nozzles 141 or a blank region where the flow of the cleaning liquid sprayed onto the wafer W does not reach appears, the number of the emergency cleaning liquid nozzles 141 may be set to three or more.
In addition, when the wafer W cannot be rotated by the spin chuck 121 as described above, the cleaning liquid is ejected from the emergency cleaning liquid nozzle 141 at an angle, a direction, or a flow rate at which the cleaning liquid flows outward over the entire surface of the wafer W. That is, when the wafer W cannot be rotated, the emergency cleaning liquid nozzle 141 needs to eject the cleaning liquid so that a pool of the cleaning liquid is not formed on the wafer W.
Further, the discharge time of the cleaning liquid from the emergency cleaning liquid nozzle 141 and the rotation speed of the spin chuck 121 can be arbitrarily set. For example, when the alarm is detected immediately after the wafer W is carried into the developing apparatus 30 and it is clearly known that the developing solution is not supplied onto the wafer W, the ejection of the cleaning solution from the emergency cleaning solution nozzle 141 and the rotation of the spin chuck 121 may be omitted. The discharge time and the number of revolutions of the emergency cleaning liquid nozzle 141 for discharging the cleaning liquid may be set in accordance with a processing procedure stored in the control unit 100 in advance, or may be set arbitrarily on an operation screen by an operator who confirms the alarm.
When the developer on the wafer W is sufficiently diluted and is completely washed off the wafer W by the discharge time of the cleaning liquid from the emergency cleaning liquid nozzle 141 set according to the process or the like, the discharge of the cleaning liquid from the emergency cleaning liquid nozzle 141 is completed (S13 in fig. 7).
The operator who has confirmed the end of the ejection of the cleaning liquid cancels the alarm (alarm clear) issued by the alarm issuing unit 142 (S14 in fig. 7). When the cleaning liquid or the like remains on the wafer W, the wafer W is rotated by the spin chuck 121 to perform a process of throwing out the liquid remaining on the wafer W (S15 in fig. 7), and the series of emergency operations are terminated after the process of throwing out is completed. In addition, even when the wafer W cannot be rotated by the spin chuck 121, the spin-out process can be omitted.
Here, for example, when an alarm is issued and the cleaning liquid is ejected from the emergency cleaning liquid nozzle 141 in a state where the wafer W is not mounted on the spin chuck 121, it is considered that the cleaning liquid enters the interior of the spin chuck 121, and the developing apparatus 30 is likely to malfunction.
Therefore, the developing apparatus 30 preferably further includes a substrate detecting unit (not shown) for determining whether or not the wafer W is present on the spin chuck 121 as the placing unit 120. As a method of detecting the substrate by the substrate detecting unit, for example, an operation state of a vacuum pump that drives to vacuum-suck the wafer W onto the spin chuck 121 may be detected, or a detection method using a laser displacement meter, a weight meter, or the like may be used.
By providing the substrate detection unit in the developing apparatus 30 in this manner, whether or not the emergency cleaning liquid nozzle 141 is operated can be determined according to the presence or absence of the wafer W on the spin chuck 121 (substrate detection step). That is, the emergency cleaning liquid nozzle 141 may be operated only when the wafer W is placed on the spin chuck 121, and the emergency cleaning liquid nozzle 141 may be not operated even when the alarm generator 142 detects that an alarm is generated when the wafer W is not placed on the spin chuck 121.
The substrate detection process may be performed at least before the cleaning liquid is sprayed from the emergency cleaning liquid nozzle 141 (emergency cleaning process), and for example, the detection may be performed after an alarm is issued until the cleaning liquid is sprayed, or the detection may be performed while the wafer W is carried into the developing apparatus 30 and placed on the spin chuck 121. As described above, for example, when the operation state of the vacuum pump is detected, the presence or absence of the substrate can be always determined.
In addition, for example, regarding an emergency stop of the development processing apparatus 30, in the case where a liquid leakage from the development processing apparatus 30 is detected, it is considered that when the cleaning liquid is further ejected from the emergency cleaning liquid nozzle 141, the liquid leakage is caused to further progress. Therefore, for example, when an emergency stop of the developing apparatus 30 is caused by a liquid leak, the emergency cleaning liquid nozzle 141 may be deactivated even if the alarm generating unit 142 detects that an alarm is generated.
When the developing process of the developing apparatus 30 is repeated, sublimates generated from the developer, the solvent, and the like accumulate in the cup 123, and the supply lines of the rinse liquid supply nozzle 136 and the emergency cleaning liquid nozzle 141 may be contaminated by the sublimates. To prevent contamination of the supply line, regular cleaning of the cup 123 is required.
The regular cleaning of the Cup 123 is performed by, for example, raising the Cup 123 by a Cup raising and lowering mechanism in a state where a dummy substrate such as a CWD (Cup Wash Disk) is placed on the spin chuck 121, and spraying a cleaning liquid onto the surface of the CWD. This can prevent contamination of the supply lines of the rinse liquid and the cleaning liquid by cleaning the sublimates deposited on the cup 123.
The regular cleaning of the cup body 123 is performed, for example, according to a preset cup cleaning process, for example, at regular intervals (every predetermined number of times of development processing, every predetermined time, or the like), or when the operator determines that cup cleaning is necessary.
In addition, the cleaning liquid is sprayed from the emergency cleaning liquid nozzle 141, and the sprayed cleaning liquid is scattered to peripheral members of the spin chuck 121, so that it is necessary to avoid the peripheral members from malfunctioning. That is, the ejection direction and the ejection angle θ of the cleaning liquid ejected from the emergency cleaning liquid nozzle 141 need to be adjusted by the angle adjustment mechanism (not shown) so that the ejection target area of the cleaning liquid is located inside the inner circumference of the cup 123. Accordingly, the cleaning liquid ejected from the emergency cleaning liquid nozzle 141 is not directly scattered to the peripheral members, and the cleaning liquid rebounded on the wafer W is also received by the cup 123 and is not scattered to the peripheral members.
Here, the position where the region to which the cleaning liquid is discharged converges on the inner side of the inner circumference of the cup 123 means: for example, as shown in fig. 9, the spreading regions a 'and B' of the cleaning liquid ejected from the emergency cleaning liquid nozzle 141 converge to positions inside the inner circumferential surface of the inclined portion 123B of the cup 123 in a side view.
The ejection angle θ of the cleaning liquid is an ejection angle when the ejected region A, B covers the entire surface of the wafer W as shown in fig. 8, or an ejection angle when the flow of the cleaning liquid after ejection is confirmed over the entire surface of the wafer W so that all the liquid on the wafer W is rinsed away. In the present embodiment, the injection angle θ is set to, for example, 50 °.
Further, an outer cup 170 is provided on the outer periphery of the cup body 123 as necessary, and is configured to prevent the cleaning liquid ejected from the emergency cleaning liquid nozzle 141 from scattering around.
The emergency cleaning liquid nozzle 141 is disposed above the spin chuck 121 as described above, and is provided at a position not overlapping with the wafer W placed on the spin chuck 121 in a plan view. As shown in fig. 8, the emergency cleaning liquid nozzle 141 is preferably disposed above the notch 123d (the portion where the inclined portion 123b is not formed in a plan view) formed in the inclined portion 123b of the cup 123. With such an arrangement, for example, even if the droplets of the cleaning liquid fall from the ejection holes when the emergency cleaning liquid nozzle 141 is not operated, the droplets of the cleaning liquid can be guided to the inside of the cup 123 without being attached to the wafer W.
In order to prevent the liquid droplets of the cleaning liquid from falling from the ejection holes when the emergency cleaning liquid nozzle 141 is not operated, the emergency cleaning liquid nozzle 141 may further include an air supply line 160 for removing the cleaning liquid remaining in the cleaning liquid supply line, as shown in fig. 9. Thus, even if the cleaning liquid remains in the cleaning liquid supply line, the remaining cleaning liquid can be pushed out by the air jet from the air supply line 160 and discharged to the outside of the emergency cleaning liquid nozzle 141 (air ejection step). That is, it is possible to prevent droplets from falling from the ejection hole of the emergency cleaning liquid nozzle 141. The air is ejected, for example, after the emergency cleaning step, after the regular dummy ejection for avoiding clogging of the emergency cleaning liquid nozzle 141, and at the time of the regular cup cleaning.
The air injection time may be set arbitrarily, and may be set appropriately on an operation screen by an operator who confirms that an alarm is issued, for example, according to a treatment process stored in the control unit 100 in advance.
In addition, as another method for suppressing the droplets of the cleaning liquid from falling from the ejection hole, for example, a suction valve may be provided in the cleaning liquid supply line.
As shown in fig. 9, a flow meter 200 may be provided in the cleaning liquid supply line to the emergency cleaning liquid nozzle 141. This allows monitoring of the flow rate of the cleaning liquid ejected from the emergency cleaning liquid nozzle 141, and thus allows checking whether or not the cleaning liquid is properly ejected onto the wafer W. The flow rate monitoring may be performed by visual observation of an operator or by the control unit 100. The flow rate monitoring by the flow meter 200 may be performed only if it is possible to confirm whether or not the cleaning on the wafer W can be performed properly, and at least the lower limit of the flow rate of the cleaning liquid may be monitored.
In the above-described embodiment, as shown in fig. 8, the arrangement and the ejection angle of the emergency cleaning liquid nozzles 141 and 141 are set so that at least a part of the ejection target region A, B overlaps, i.e., interferes with each other, but instead of this arrangement, as shown in fig. 10, the cleaning liquids ejected from the two emergency cleaning liquid nozzles 141a and 141b may be arranged so as not to interfere with each other in the ejection target region E, F on the wafer W. For the sake of illustration, although the gap is drawn between the ejection target regions E, F, it is needless to say that in an actual device, the gap is not present and the ejection target regions E, F are preferably adjacent to each other.
According to the example of fig. 10, the developer and the rinse liquid on the wafer W can be pushed out to the outside of the wafer W by the liquid flow ejected from the emergency rinse liquid nozzles 141a and 141b, and the developer and the rinse liquid on the wafer W can be removed. In the example shown in fig. 10, the developing solution and the rinse solution on the wafer W are removed from the entire surface of the wafer W by rotating the wafer W. When the entire surface of the wafer W is not rotated to remove the developer or rinse solution, the arrangement and the spray angle of the emergency cleaning solution nozzles 141a and 141b may be set so that the two spray regions E, F cover the entire surface of the wafer W. Alternatively, even if the ejection target region E, F does not cover the entire area of the wafer W, the ejection region and the ejection angle may be set so that the flow of the cleaning liquid from the ejection target region E, F eventually covers the entire area of the wafer W, and the ejection amount and the ejection speed may be set. For example, even if the ejection target region is set only in the region closest to the emergency cleaning liquid nozzles 141a and 141b, the flow of the cleaning liquid from the ejection target region may be expanded to cover the region as shown in fig. 10. The respective liquid flows from the ejected regions E, F may be set so as not to interfere with the wafer W.
For example, a plurality of spray ports may be arranged in a fan shape in one emergency cleaning liquid nozzle, or a plurality of emergency cleaning liquid nozzles may be arranged in a fan shape. In any case, the developer and rinse liquid on the wafer W can be efficiently and quickly pushed out to the outside of the wafer W by adjusting the ejection of the rinse liquid from the emergency rinse liquid nozzle so that the ejected area does not interfere with each other.
Fig. 11 shows an example in which the emergency cleaning liquid nozzles 141c, 141d, and 141e are arranged in a fan shape so that the cleaning liquid ejected from the three emergency cleaning liquid nozzles 141c, 141d, and 141e does not interfere with each other in the ejection target region J, K, L on the wafer W. In this example, a gap is drawn between the ejection target regions J, K, L for convenience of illustration, but in an actual apparatus, the gap is preferably not present and the ejection target regions J, K, L are adjacent to each other.
According to the example of fig. 11, the developer and rinse solution on the wafer W can be pushed out to the outside of the wafer W by the flow of the liquid from the emergency cleaning liquid nozzles 141c to 141e, and the developer and rinse solution on the wafer W can be removed. In the example shown in fig. 11, the developing solution and the rinse solution on the wafer W are removed from the entire surface of the wafer W by rotating the wafer W. When the entire surface of the wafer W is not rotated to remove the developer or rinse solution, the arrangement and the spray angle of the emergency cleaning solution nozzles 141c to 141e may be set so that all of the three spray regions J, K, L cover the wafer W. Alternatively, even if the ejection target region J, K, L does not entirely cover the entire surface of the wafer W, the ejection target region, the ejection angle, the ejection amount, the ejection speed, and the like may be set so that the flow of the cleaning liquid from the ejection target region J, K, L eventually covers the entire surface of the wafer W.
The emergency operation according to the present embodiment is particularly effective when the development processing apparatus 30 needs to be stopped in a subsequent step of semiconductor manufacturing, that is, when rework is not possible, but it is of course applicable to a case where the apparatus needs to be stopped in a previous step of semiconductor manufacturing.
The occurrence of an abnormality is not limited to the occurrence of a malfunction or failure in a member, component, or the like constituting the developing process apparatus, and may include the occurrence of such a malfunction or failure in a part of the entire system including the developing process apparatus, if necessary. Further, if necessary, human actions against a predetermined operation manual, such as an operator's operation mistake and opening of a door, may be included in the occurrence of an abnormality. In these cases, a scenario in which the emergency operation is performed may be selected in advance, and the emergency operation performed when the abnormality occurs may be input to the control unit 100 in advance for each scenario, for example.
The embodiments have been described above, but the present disclosure is not limited to the above examples. It should be understood by those skilled in the art that various modifications and changes can be made within the scope of the technical idea described in the claims, and it is understood that these also belong to the technical scope of the present disclosure.

Claims (7)

1. A developing apparatus for developing a substrate, comprising:
a mounting unit for mounting the substrate; and
and one or more emergency cleaning liquid nozzles provided separately from the normal cleaning nozzles, for ejecting a cleaning liquid toward the substrate on the mounting portion when an abnormality occurs in the developing apparatus.
2. The developing processing apparatus according to claim 1,
further comprises an alarm issuing unit for issuing an alarm when an abnormality occurs in the developing apparatus,
the emergency cleaning liquid nozzle starts to spray the cleaning liquid toward the substrate placed on the placement portion based on the alarm emission from the alarm emission portion.
3. The developing treatment apparatus according to claim 1 or 2,
the emergency cleaning liquid nozzle does not operate even when an abnormality occurs in the developing apparatus in a case where a substrate is not mounted on the mounting portion.
4. The developing treatment apparatus according to claim 1 or 2,
the emergency cleaning liquid nozzle is disposed above the mounting portion and does not overlap a substrate mounted on the mounting portion in a plan view.
5. The developing treatment apparatus according to claim 1 or 2,
the emergency cleaning liquid nozzle is a spray nozzle for spraying the cleaning liquid.
6. The developing treatment apparatus according to claim 1 or 2,
the mounting portion is configured to be rotatable, and the mounting portion rotates when the cleaning liquid is ejected from the emergency cleaning liquid nozzle.
7. The developing treatment apparatus according to claim 1 or 2,
having more than two said emergency cleaning fluid nozzles,
the respective emergency cleaning liquid nozzles are arranged so that the cleaning liquid ejected from the respective emergency cleaning liquid nozzles does not interfere with each other in the ejection target areas on the substrate.
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CN113113328A (en) * 2021-03-04 2021-07-13 亚电科技南京有限公司 Single wafer cleaning device washs dish structure and single wafer cleaning device

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CN113083766A (en) * 2021-03-04 2021-07-09 亚电科技南京有限公司 Method for cleaning single wafer
CN113113328A (en) * 2021-03-04 2021-07-13 亚电科技南京有限公司 Single wafer cleaning device washs dish structure and single wafer cleaning device
CN113113328B (en) * 2021-03-04 2023-01-31 江苏亚电科技有限公司 Single wafer cleaning device washs dish structure and single wafer cleaning device

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