CN209913231U - Heat sink-free laser pumping source packaging structure - Google Patents
Heat sink-free laser pumping source packaging structure Download PDFInfo
- Publication number
- CN209913231U CN209913231U CN201921007493.6U CN201921007493U CN209913231U CN 209913231 U CN209913231 U CN 209913231U CN 201921007493 U CN201921007493 U CN 201921007493U CN 209913231 U CN209913231 U CN 209913231U
- Authority
- CN
- China
- Prior art keywords
- conductive layer
- semiconductor chip
- insulating base
- conducting layer
- step surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Semiconductor Lasers (AREA)
Abstract
The utility model relates to the technical field of semiconductor lasers, and discloses a heat sink-free laser pumping source packaging structure, which comprises a plurality of semiconductor chips and a step-shaped insulating base, wherein a first conducting layer and a second conducting layer are arranged on each first step surface at intervals; one end of the semiconductor chip is fixedly connected to the upper surface of the first conducting layer, and the other end of the semiconductor chip is electrically connected to the upper surface of the second conducting layer through a gold wire. The heat sink-free laser pumping source packaging structure cancels a COS module structure containing a heat sink and an aluminum wire bonding structure, does not need to provide an external electric connection structure, simplifies the packaging process, improves the packaging structure, improves the packaging reliability, and simultaneously, a semiconductor chip is directly fixed on an insulating base, so that the interface thermal resistance between the semiconductor chip and the insulating base is smaller.
Description
Technical Field
The utility model relates to a semiconductor laser technical field especially relates to an exempt from heat sink laser pumping source packaging structure.
Background
The semiconductor laser is a P-N junction diode with optical feedback function using semiconductor material as working substance, and compared with solid laser and gas laser, it has the advantages of compact structure, high reliability, high efficiency and stability, etc., and has been widely used in the industries of machining, material processing, weapon manufacturing and laser display, etc. In order to obtain a larger output power, a plurality of individual semiconductor lasers are generally combined together to form an array, resulting in a high-power semiconductor laser. At present, the electro-optic conversion efficiency of a high-power semiconductor laser is low, most electric power is converted into thermal power, and the optical characteristics, the output power and the reliability of the semiconductor laser are closely related to the working temperature of a device, so that the packaging technology of the high-power semiconductor laser needs to be optimized to ensure that the laser has higher efficiency, better spectrum and higher output power.
At present, because the semiconductor laser pumping source base adopts a metal base, the metal base cannot realize thermoelectric isolation. In the existing packaging structure, a piece of ceramic is bonded on a base at a position where thermoelectric isolation is needed, and then a conductive block is placed on the ceramic to realize electric connection. Because the base can not realize thermoelectric isolation and the thermal expansion coefficient of the base is greatly different from that of the Chip, the Chip can not be directly fixed On the base, so a Chip module (COS module for short) must be manufactured, namely the Chip and the ceramic heat sink are packaged into a module, and then the module is mechanically connected with the base, so that the heat dissipation requirement is ensured. Similarly, because the coefficient of thermal expansion of the metal base is relatively large, the CTE mismatch between the lens and the metal base is too large, and there is a risk of failure, so that the lens and the mirror need to be bonded to the metal base through a ceramic substrate to prevent the coefficient of thermal expansion mismatch and the mirror from being broken. Simultaneously, still need adopt the aluminum wire to realize the series connection structure of a plurality of modules between the COS module, and the aluminum wire machine is more expensive, and there is the risk of inefficacy in the aluminum wire.
SUMMERY OF THE UTILITY MODEL
An embodiment of the utility model provides a exempt from heat sink laser pumping source packaging structure for solve current semiconductor laser pumping source packaging structure and use the COS module that contains heat sink and adopt the problem that the cost that a plurality of modules of aluminum wire series connection lead to is too high, became invalid easily, with reliability, the economic nature that improves packaging structure.
The embodiment of the utility model provides a heat sink laser pumping source packaging structure exempts from, including a plurality of semiconductor chips, still include the insulating base that is step-like, all interval settings are had first conducting layer and second conducting layer on every first step face, the first conducting layer on the first step face is connected through the third conducting layer electricity that locates the insulating base with the second conducting layer on the first step face of adjacent one side; one end of the semiconductor chip is fixedly connected to the upper surface of the first conducting layer, and the other end of the semiconductor chip is electrically connected to the upper surface of the second conducting layer through a gold wire.
The third conducting layer is arranged on the outer surface of the step side wall of the first step surface, one end of the third conducting layer is connected to the first conducting layer on the first step surface, and the other end of the third conducting layer is connected to the second conducting layer on the first step surface on the adjacent side.
The third conducting layer is embedded in the insulating base, one end of the third conducting layer is connected to the first conducting layer on the first step surface, and the other end of the third conducting layer is connected to the second conducting layer on the first step surface on the adjacent side.
And a gold-tin solder area is arranged on the upper surface of the first conducting layer, and the semiconductor chip is welded in the gold-tin solder area.
Wherein the first conductive layer and the second conductive layer are both gold-depositing layers.
Wherein, the insulating base is a ceramic base.
The semiconductor chip is of a vertical structure, and a gold plating layer is arranged on the surface of the semiconductor chip.
The semiconductor chip comprises a semiconductor chip, and is characterized by further comprising a lens and a reflector which correspond to the semiconductor chip one by one, wherein the lens and the reflector are fixedly connected to the insulating base.
The insulating base is also provided with a plurality of second step surfaces and a plurality of third step surfaces which are parallel to the first step surface, and the heights of the first step surface, the second step surfaces and the third step surfaces are sequentially reduced; the lens is fixedly connected to the second step surface, and the reflector is fixedly connected to the third step surface.
The lens and the reflector are both bonded to the insulating base through ultraviolet curing glue.
The embodiment of the utility model provides a exempt from heat sink laser pumping source packaging structure, including a plurality of semiconductor chips, still including being the insulating base of step form, all lug connection has a semiconductor chip on every first step face to form the semiconductor laser array. The lower end of the semiconductor chip is directly and fixedly connected to the upper surface of the first conducting layer, the upper end of the semiconductor chip is electrically connected to the upper surface of the second conducting layer through a gold wire, the first conducting layer and the second conducting layer of the first step surface are used for achieving electric connection with the semiconductor chip, and meanwhile the third conducting layer arranged on the insulating base is used for achieving series connection between the adjacent semiconductor chips. The heat sink-free laser pumping source packaging structure cancels a COS module structure containing a heat sink and an aluminum wire bonding structure, does not need to provide an external electric connection structure, simplifies the packaging process, improves the packaging structure, improves the packaging reliability, and simultaneously, a semiconductor chip is directly fixed on an insulating base, so that the interface thermal resistance between the semiconductor chip and the insulating base is smaller.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is an isometric view of a heat sink free laser pump source package in an embodiment of the present invention;
FIG. 2 is a cross-sectional view of the heatsink-less laser pumping source package structure of FIG. 1 at a first step level;
description of reference numerals:
1: a semiconductor chip; 2: an insulating base; 3: a first step surface;
31: a first conductive layer; 32: a second conductive layer; 33: a third conductive layer;
4: a second step surface; 5: a third step surface; 6: gold thread;
7: a gold-tin solder region; 8: a lens; 9: a mirror.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
In the description of the embodiments of the present invention, it should be noted that the terms "first", "second" and "third" are used for the sake of clarity in describing the numbering of the product parts and do not represent any substantial difference, unless explicitly stated or limited otherwise. The directions of the upper part, the lower part, the left part and the right part are all based on the directions shown in the attached drawings. The specific meaning of the above terms in the embodiments of the present invention can be understood by those skilled in the art according to specific situations.
It is to be understood that, unless otherwise expressly specified or limited, the term "coupled" is used broadly, and may, for example, refer to directly coupled devices or indirectly coupled devices through intervening media. The specific meaning of the above terms in the embodiments of the present invention can be understood in specific cases by those skilled in the art.
Fig. 1 is an isometric view of an embodiment of the present invention, fig. 2 is a cross-sectional view of an embodiment of fig. 1 at a first step surface of a package structure of a heat sink-free laser pump source, as shown in fig. 1-2, an embodiment of the present invention provides an embodiment of a package structure of a heat sink-free laser pump source, which includes a plurality of semiconductor chips 1, and further includes an insulating base 2 in a step shape, a first conductive layer 31 and a second conductive layer 32 are disposed on each first step surface 3 at equal intervals, and the first conductive layer 31 on the left first step surface 3 is electrically connected with the second conductive layer 32 on the right adjacent first step surface 3 through a third conductive layer 33 disposed on the insulating base 2. The lower end of the semiconductor chip 1 is fixed to the upper surface of the first conductive layer 31, and the upper end of the semiconductor chip 1 is electrically connected to the upper surface of the second conductive layer 32 by a gold wire 6.
Specifically, the insulating base 2 is made of an insulating material, such as a ceramic base, which has the performance advantages of excellent heat resistance, good corrosion resistance, high mechanical strength, light weight, and the like, and is more and more widely applied in the field of packaging. Because the ceramic base has excellent insulating property, thermoelectric isolation can be realized through local metallization, and the thermal expansion coefficient of the ceramic base is close to that of glass, so that the requirement of bonding a lens and a reflector can be met. In addition, the insulating base 2 may also adopt other insulating bases having thermal conductivity satisfying the heat dissipation requirement of the semiconductor chip 1 and having a thermal expansion coefficient close to that of the lens and the mirror, which is not limited herein.
The first conductive layer 31 and the second conductive layer 32 may be gold-deposited layers, or may have other conductive layer structures. More specifically, the work of disposing the first conductive layer 31 and the second conductive layer 32 on the insulating base 2 may be performed by using photolithography development or a stainless mask in combination with a magnetron sputtering process. The third conductive layer 33 is provided on the insulating base 2, one end of the third conductive layer 33 is electrically connected to the first conductive layer 31, and the other end of the third conductive layer 33 is electrically connected to the second conductive layer 32.
The heat sink-free laser pumping source packaging structure comprises a plurality of semiconductor chips and a step-shaped insulating base, wherein each first step surface is directly connected with one semiconductor chip to form a semiconductor laser array. The lower end of the semiconductor chip is directly and fixedly connected to the upper surface of the first conducting layer, the upper end of the semiconductor chip is electrically connected to the upper surface of the second conducting layer through a gold wire, the first conducting layer and the second conducting layer of the first step surface are used for achieving electric connection with the semiconductor chip, and meanwhile the third conducting layer arranged on the insulating base is used for achieving series connection between the adjacent semiconductor chips. The heat sink-free laser pumping source packaging structure cancels a COS module structure containing a heat sink and an aluminum wire bonding structure, does not need to provide an external electric connection structure, simplifies the packaging process, improves the packaging structure, improves the packaging reliability, and simultaneously, a semiconductor chip is directly fixed on an insulating base, so that the interface thermal resistance between the semiconductor chip and the insulating base is smaller.
Further, as shown in fig. 1 and 2, a third conductive layer 33 is provided on the outer surface of the step side wall of the first step surface 3, the third conductive layer 33 has a layered structure in the vertical direction, the upper end of the third conductive layer 33 is connected to the first conductive layer 31 on the left first step surface 3, and the lower end of the third conductive layer 33 is connected to the second conductive layer 32 on the right adjacent first step surface 3.
Specifically, the third conductive layer 33 may be a gold-deposited layer. More specifically, the work of providing the third conductive layer 33 on the step of the first step surface of the insulating base 2 may be performed by using photolithography development or a stainless mask in combination with a magnetron sputtering process, and may be performed together with the first conductive layer 31 and the second conductive layer 32.
In addition to the above, the third conductive layer 33 may be embedded in the insulating base 2, an upper end of the third conductive layer 33 is connected to the first conductive layer 31 on the left first step surface 3, and a lower end of the third conductive layer 33 is connected to the second conductive layer 32 on the right adjacent first step surface 3.
Specifically, the third conductive layer 33 may be an L-shaped or U-shaped metal plate embedded inside the first step. The third conductive layer 33 may have a conductive structure of another shape as long as a conductive function can be achieved.
Further, the upper surface of the first conductive layer 31 is provided with a gold-tin solder region 7, and the semiconductor chip 1 is soldered to the gold-tin solder region 7.
Further, the semiconductor chip 1 is of a vertical structure, and a gold plating layer is disposed on the surface of the semiconductor chip 1. The lower end (i.e., P end) of the semiconductor chip 1 can be eutectic-soldered to the au-sn solder region 7, and the upper end (i.e., N end) of the semiconductor chip 1 can be electrically connected to the second conductive layer 32 through the gold wire 6.
Further, the first conductive layer 31 and the second conductive layer 32 are both gold-deposited layers. In addition, when the third conductive layer 33 is disposed on the step sidewall of the first step surface, a gold immersion layer may also be used.
Further, as shown in fig. 1, the semiconductor device further includes a lens 8 and a mirror 9 corresponding to the semiconductor chip 1 one to one, and the lens 8 and the mirror 9 are fixed to a portion of the non-conductive layer on the insulating base 2. By adopting the insulating base 2, the lens 8 and the reflector 9 can be directly and fixedly connected on the insulating base 2 without arranging ceramic substrates at the bottoms of the lens 8 and the reflector 9, thereby simplifying the packaging process. While the portions of the non-conductive layer match the thermal expansion coefficients of the lens 8 and mirror 9, thermal failure may be reduced.
Furthermore, a plurality of second step surfaces 4 and a plurality of third step surfaces 5 parallel to the first step surface 3 are further arranged on the insulating base 2, and the heights of the first step surface 3, the second step surfaces 4 and the third step surfaces 5 are sequentially decreased progressively. The lens 8 is fixed on the second step surface 4, and the reflector 9 is fixed on the third step surface 5.
Further, the lens 8 and the mirror 9 are bonded to the insulating base 2 by an ultraviolet curing adhesive. The curing process of the lens 8 and the reflector 9 is simplified in an ultraviolet curing mode, and the position precision of the lens is improved.
In a specific embodiment, a process flow of a heat sink-free laser pumping source package structure is further provided, which specifically includes:
step S1: the outline of the ceramic insulating base 2 with a plurality of first step surfaces 3, second step surfaces 4 and third step surfaces 5 is finished by adopting die forming and precise carving;
step S2: local metallization of the insulating base 2 is completed by adopting photoetching development or a stainless steel mask and combining a magnetron sputtering process, a first conducting layer 31 and a second conducting layer 32 are arranged on the first step surface 3, and a third conducting layer 33 is arranged on the step side wall of the first step surface 3;
step S3: the preparation of the gold-tin solder area 7 is completed by adopting a metal stripping technology and combining an evaporation technology;
step S4: the P end of the semiconductor chip 1 with the gold-plated layer on the surface and the gold-tin solder area 7 of the insulating base 2 are welded in an eutectic mode;
step S5: the N end of the semiconductor chip 1 and the second conducting layer 32 of the insulating base 2 complete gold wire ball bonding through the gold wire 6 to realize electric connection;
step S6: and the lens 8, the second step surface 4 (non-conductive layer) of the insulating base 2, the reflector 9 and the third step surface 5 (non-conductive layer) of the insulating base 2 are bonded together in an ultraviolet curing mode, so that the packaging of the heat sink-free laser pumping source is completed.
Can see through above embodiment, the utility model provides an exempt from heat sink laser pumping source packaging structure, including a plurality of semiconductor chips, still including being the insulating base of step form, all the lug connection has a semiconductor chip on every first step face to form the semiconductor laser array. The lower end of the semiconductor chip is directly and fixedly connected to the upper surface of the first conducting layer, the upper end of the semiconductor chip is electrically connected to the upper surface of the second conducting layer through a gold wire, the first conducting layer and the second conducting layer of the first step surface are used for achieving electric connection with the semiconductor chip, and meanwhile the third conducting layer arranged on the insulating base is used for achieving series connection between the adjacent semiconductor chips. The heat sink-free laser pumping source packaging structure cancels a COS module structure containing a heat sink and an aluminum wire bonding structure, does not need to provide an external electric connection structure, simplifies the packaging process, improves the packaging structure, improves the packaging reliability, and simultaneously, a semiconductor chip is directly fixed on an insulating base, so that the interface thermal resistance between the semiconductor chip and the insulating base is smaller.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it should be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not depart from the spirit and scope of the present invention in its corresponding aspects.
Claims (10)
1. A heat sink-free laser pumping source packaging structure comprises a plurality of semiconductor chips and is characterized by further comprising a step-shaped insulating base, wherein a first conducting layer and a second conducting layer are arranged on each first step surface at intervals, and the first conducting layer on the first step surface is electrically connected with the second conducting layer on the first step surface on the adjacent side through a third conducting layer arranged on the insulating base; one end of the semiconductor chip is fixedly connected to the upper surface of the first conducting layer, and the other end of the semiconductor chip is electrically connected to the upper surface of the second conducting layer through a gold wire.
2. The package structure of claim 1, wherein the third conductive layer is disposed on an outer surface of the step sidewall of the first step surface, one end of the third conductive layer is connected to the first conductive layer on the first step surface, and the other end of the third conductive layer is connected to the second conductive layer on the first step surface on an adjacent side.
3. The package structure of claim 1, wherein the third conductive layer is pre-buried in the insulating base, one end of the third conductive layer is connected to the first conductive layer on the first step surface, and the other end of the third conductive layer is connected to the second conductive layer on the first step surface on the adjacent side.
4. The package structure of claim 1, wherein a gold-tin solder region is disposed on an upper surface of the first conductive layer, and the semiconductor chip is soldered to the gold-tin solder region.
5. The package structure of claim 1, wherein the first conductive layer and the second conductive layer are both gold-deposited layers.
6. The package structure of claim 1, wherein the insulating base is a ceramic base.
7. The package structure of claim 1, wherein the semiconductor chip is a vertical structure, and a gold plating layer is disposed on a surface of the semiconductor chip.
8. The package structure of any one of claims 1 to 7, further comprising a lens and a mirror corresponding to the semiconductor chip one to one, wherein the lens and the mirror are fixed to the insulating base.
9. The package structure of claim 8, wherein the insulating base further comprises a plurality of second step surfaces and a plurality of third step surfaces parallel to the first step surface, and the heights of the first step surface, the second step surfaces and the third step surfaces decrease sequentially; the lens is fixedly connected to the second step surface, and the reflector is fixedly connected to the third step surface.
10. The package structure of claim 8, wherein the lens and the reflector are both bonded to the insulating base by an ultraviolet curing adhesive.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921007493.6U CN209913231U (en) | 2019-07-01 | 2019-07-01 | Heat sink-free laser pumping source packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921007493.6U CN209913231U (en) | 2019-07-01 | 2019-07-01 | Heat sink-free laser pumping source packaging structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209913231U true CN209913231U (en) | 2020-01-07 |
Family
ID=69050470
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201921007493.6U Active CN209913231U (en) | 2019-07-01 | 2019-07-01 | Heat sink-free laser pumping source packaging structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209913231U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114664755A (en) * | 2020-12-23 | 2022-06-24 | 意法半导体有限公司 | Stacked die including multi-contact interconnect |
-
2019
- 2019-07-01 CN CN201921007493.6U patent/CN209913231U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114664755A (en) * | 2020-12-23 | 2022-06-24 | 意法半导体有限公司 | Stacked die including multi-contact interconnect |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7391153B2 (en) | Light emitting device provided with a submount assembly for improved thermal dissipation | |
| US7607801B2 (en) | Light emitting apparatus | |
| JP4990355B2 (en) | Semiconductor light emitting device package submount and semiconductor light emitting device package including the submount | |
| CN100364114C (en) | Surface mountable optocoupler package | |
| KR100859137B1 (en) | Semiconductor Light Emitting Device | |
| US7763906B2 (en) | Semiconductor light-emitting device and method | |
| CN102185090B (en) | Luminescent device adopting COB (chip on board) packaging and manufacturing method thereof | |
| JP5863602B2 (en) | Power semiconductor device | |
| US8962988B2 (en) | Integrated semiconductor solar cell package | |
| JP2009130204A (en) | Light source apparatus | |
| JP2016054279A (en) | Semiconductor laser | |
| JPWO2018151176A1 (en) | Thermoelectric element package | |
| CN209913232U (en) | Semiconductor laser pumping source packaging structure | |
| KR100665182B1 (en) | High power led package and fabrication method thereof | |
| CN209913231U (en) | Heat sink-free laser pumping source packaging structure | |
| CN220492415U (en) | Laser module and laser | |
| CN112636160B (en) | Laser device | |
| EP2362432B1 (en) | Solar cell assembly | |
| CN212062998U (en) | Semiconductor laser array packaging module | |
| CN211063045U (en) | L D light-emitting device | |
| CN106711754A (en) | Encapsulating structure for high-power semiconductor laser and preparation method for high-power semiconductor laser | |
| KR101897304B1 (en) | Power module | |
| KR101308090B1 (en) | method for manufacturing substrate for light emitting device and the substrate thereby | |
| JP2011151276A (en) | Photoelectric converter and photoelectric conversion module | |
| JP2007116126A (en) | Light emitting device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |